JPH1192950A - 健全な膜の堆積方法及び装置 - Google Patents
健全な膜の堆積方法及び装置Info
- Publication number
- JPH1192950A JPH1192950A JP26934097A JP26934097A JPH1192950A JP H1192950 A JPH1192950 A JP H1192950A JP 26934097 A JP26934097 A JP 26934097A JP 26934097 A JP26934097 A JP 26934097A JP H1192950 A JPH1192950 A JP H1192950A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- semiconductor wafer
- plating
- elastic deformation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000151 deposition Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 49
- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 238000007747 plating Methods 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 230000005489 elastic deformation Effects 0.000 claims abstract description 20
- 230000008021 deposition Effects 0.000 claims abstract description 12
- 238000006073 displacement reaction Methods 0.000 claims abstract description 6
- 239000007788 liquid Substances 0.000 claims description 17
- 238000003825 pressing Methods 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 230000002706 hydrostatic effect Effects 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 37
- 239000000243 solution Substances 0.000 description 11
- 239000010949 copper Substances 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000007772 electroless plating Methods 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- -1 chlorine ions Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000881 depressing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- WGTYBPLFGIVFAS-UHFFFAOYSA-N tetramethylazanium;hydrate Chemical compound O.C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-N 0.000 description 1
- UEUXEKPTXMALOB-UHFFFAOYSA-J tetrasodium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]C(=O)CN(CC([O-])=O)CCN(CC([O-])=O)CC([O-])=O UEUXEKPTXMALOB-UHFFFAOYSA-J 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Chemically Coating (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26934097A JPH1192950A (ja) | 1997-09-16 | 1997-09-16 | 健全な膜の堆積方法及び装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26934097A JPH1192950A (ja) | 1997-09-16 | 1997-09-16 | 健全な膜の堆積方法及び装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1192950A true JPH1192950A (ja) | 1999-04-06 |
| JPH1192950A5 JPH1192950A5 (OSRAM) | 2004-10-14 |
Family
ID=17471019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26934097A Pending JPH1192950A (ja) | 1997-09-16 | 1997-09-16 | 健全な膜の堆積方法及び装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1192950A (OSRAM) |
-
1997
- 1997-09-16 JP JP26934097A patent/JPH1192950A/ja active Pending
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A977 | Report on retrieval |
Effective date: 20040820 Free format text: JAPANESE INTERMEDIATE CODE: A971007 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20041019 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20050301 |