經濟部中央標準局員工消費合作社印製 271003 A7 B7 五、發明説明（1 ) 本案係一種製造S 0 G之方法，尤指―種製造非回蝕刻 SOG之方法。 SOG (Spin~on-glass) 是目前超大型積體電路金 屬間平坦化過程最常用的一種介電質材料。S0G可包括矽 氧烷類（siloxane)SOG 及矽酸鹽類（Silicate)s〇G 二 種；雖然siloxane S0G與Silicate S0G相較之下有 較多的優點，但在以〇 2電漿去除光阻時，一般非回蝕刻 S0G製程中，通孔（via)內的siloxane S0G會遭受到該 〇 2電漿之破壞，這使得siloxane S0G之製程變得困難。 圖一爲習知之非回蝕刻siloxane S0G之製造流程圖， 其步驟包括；（1)以 PECVD(Plasma-enhanced chemical vapor deposition)沉積一氧化物爲第一 介電質層於第一層金屬層之基材上；（2)塗覆2-3層 Siloxane S0G於該第一介電質層之上；（3)於425 °C溫 度，以45分鐘固化該S0G; (4)以PECVD(Plasma-enhanced chemical vapor deposition)沉積第 3-4 KA厚之氧化物爲第二介電質層；（5)上光阻並利用 微影及鈾刻技術於該第一金屬層上得一通孔（v i a )，俾形 成一電性接觸區：（6 )以0 2電漿及溶劑去除光阻；（7 )將 整個基材於4G0°C下烘烤30分鐘；（8)做第二道金屬沉 積。 在習知的方法中，該步驟（6)中之用以去光阻之02電 漿將會破壞該通孔中之Siloxane S0G，造成第一層金屬 與第二層金屬間接觸（planarization)不良》 ---------------、玎------Μ ▲ (請先閱讀背面之注意事項再填寫本頁) 271003 經濟部中央樣準局員工消費合作社印製 A7 B7 五、發明説明（2 ) 本案'之主要目的在提供一製造非回蝕刻SOG之方法，俾 使通孔內之S0G可承受02電漿之破壞。 本案之另一目的在提供一製造非回蝕刻SOG之製造方 法，俾避免氫效應，使得非回蝕刻S 0 G之製程變得健康且易 製造》 本案係一種製造非回蝕刻S0G之方法，其步驟包括： (1)於一基體之第一金屬層上塗覆矽氧烷類 SOG(Siloxane S0G) ; (2)固化該Siloxane SOG ; (3)做卩2電漿處理，俾該Siloxane SOG被轉化成氮化物 SOGCnitride S0G) ; (4)沉積一氧化物層於該氮化物 S〇(i之上做爲介電質層；（5)上光阻於該介電質層之表 面，並利用微影、蝕刻技術於該第一金屬層之上形成一通 孔（v i a )，俾得一電性接觸區；（6 )去光阻；（7 )實施第 二道金屬沈積；其中，步驟（3)係以In-stiu(同位置/時 間）方式，與步驟（4)於同一電漿沉積機台內被完成。 較佳者，步驟（4)中之該介電質層係以PECVD (Plasma-enhanced chem-i cal vapor deposit ion)开多成之 ° 較佳者，於步驟（1)塗覆Sil〇xane s〇G於該第一金 屬層之前更包括一步驟（8)以PECVD法沉積一層氧化物於 該基板上之第一金屬層之上，以做爲介電質，該介電質層 厚度爲2 - 3 KA » 較佳者’步驟（1)中所塗覆之矽氧烷類層數爲2-3 層。步驟（2)中之固化溫度爲425 °C。步驟（2)中之固化 時間爲45分鐘。步驟（3)中之N2電漿處理後之Nitride 3 本紙張尺度適用中國國家標隼（CNS ) A4規格（21 OX 297公釐） ----------------ίτ------I (請先聞讀背面之注意事項再填寫本頁) 271003 A7 B7 五、發明説明（ SOG厚度爲2-4 KA。 本案得藉下列圖示及詳細說明’俾得一深入了解 第一圖 第二圖 第三圖 施例截面圖 第四圖 (請先閲讀背面之注意事項再填寫本頁) 係習知非回蝕刻SOG之製造方法流程圖。 係本案方法之一較佳實施例製造流程圖。 以本案方法製造之非回飩刻SOG之一較佳實 本案第一金屬層上之通孔放大圖。 茲舉一較佳實施例來說明本案之詳細內容；第二圖表 示了本案製造法之流程圖；第三圖爲截面圖，其包括；基 體3 1 ' 氧化層3 2、 複晶矽3 3、 以 B P S G (Borophosphoro silicate glass)回流製成之介 電質層34、第一金屬層35、第一介電質層36、S0G 37、第二介電質層38、通孔（via)39、第二金屬層 4 0° 請參閱圖二及圖三，本案較佳實施例步驟包括； 1)於第一金屬層35之上沉積第一層2-3 KA之氧化物 以做爲介電質層36，沉積方法可以PECVD爲之； 2 )塗覆 2-3 層之 Si loxane SOG 37;Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 271003 A7 B7 V. Description of the invention (1) This case is a method of manufacturing S0G, especially a method of manufacturing non-etchback SOG. SOG (Spin ~ on-glass) is currently the most commonly used dielectric material for the intermetallic planarization process of very large integrated circuits. S0G can include two kinds of siloxane SOG and silicate (Silicate) s〇G; although siloxane S0G and Silicate S0G have more advantages compared, but in the 02 plasma to remove light In general, in non-etchback SOG processes, the siloxane SOG in vias will be damaged by the 02 plasma, which makes the siloxane SOG process difficult. FIG. 1 is a conventional non-etchback siloxane S0G manufacturing flow chart. The steps include: (1) PECVD (Plasma-enhanced chemical vapor deposition) deposits an oxide as the first dielectric layer on the first metal layer On the substrate; (2) coat 2-3 layers of Siloxane S0G on the first dielectric layer; (3) cure the S0G at 425 ° C for 45 minutes; (4) use PECVD (Plasma- enhanced chemical vapor deposition) depositing the 3-4 KA thick oxide as the second dielectric layer; (5) photoresist and using lithography and uranium engraving technology to obtain a via in the first metal layer (via) In order to form an electrical contact area: (6) Remove the photoresist with 02 plasma and solvent; (7) Bake the entire substrate at 4G0 ° C for 30 minutes; (8) Do a second metal deposition. In the conventional method, the 02 plasma used to remove the photoresist in this step (6) will destroy the Siloxane S0G in the through hole, resulting in poor planarization between the first layer metal and the second layer metal 》 --------------- 、 玎 ------ Μ ▲ (please read the precautions on the back before filling in this page) 271003 Printed by the Employee Consumer Cooperative of the Central Bureau of Samples of the Ministry of Economic Affairs System A7 B7 5. Description of the invention (2) The main purpose of this case is to provide a method for manufacturing non-etchback SOG, so that the S0G in the through hole can withstand the damage of 02 plasma. Another objective of this case is to provide a manufacturing method for manufacturing non-etchback SOG, in order to avoid the hydrogen effect, making the non-etching SOG process healthy and easy to manufacture. "This case is a method for manufacturing non-etchback SOG, which The steps include: (1) coating the first metal layer of a substrate with silicone SOG (Siloxane S0G); (2) curing the Siloxane SOG; (3) doing 2 plasma treatment so that the Siloxane SOG is converted To form a nitride SOGCnitride SOG); (4) deposit an oxide layer on the nitride SO (i as a dielectric layer; (5) photoresist on the surface of the dielectric layer, and use micro Shadowing and etching technology to form a via on the first metal layer to obtain an electrical contact area; (6) remove photoresist; (7) implement the second metal deposition; wherein, step (3) It is done in the same plasma deposition machine with step (4) by In-stiu (same location / time) method. Preferably, the dielectric layer in step (4) is PECVD (Plasma- enhanced chem-i cal vapor deposit ion) Open more than °° Preferably, apply Sil〇xane s〇G to the first metal in step (1) Previously, it also included a step (8) depositing an oxide layer on the first metal layer on the substrate by PECVD method as a dielectric, the thickness of the dielectric layer is 2-3 KA »better The number of siloxane layers applied in step (1) is 2-3. The curing temperature in step (2) is 425 ° C. The curing time in step (2) is 45 minutes. Step (3) Nitride 3 after N2 plasma treatment in China. This paper scale is applicable to China National Standard Falcon (CNS) A4 specification (21 OX 297 mm) ---------------- ίτ --- --- I (Please read the precautions on the back and then fill out this page) 271003 A7 B7 5. Description of the invention (SOG thickness is 2-4 KA. In this case, you can borrow the following illustration and detailed description Fig. 2 Fig. 3 Fig. Example cross-sectional view Fig. 4 (please read the precautions on the back before filling in this page) is a flow chart of the conventional non-etchback SOG manufacturing method. It is a preferred embodiment of the method in this case Manufacturing Flowchart. One of the non-returned SOG manufactured by the method of this case is preferably an enlarged view of the through hole on the first metal layer of this case. Here is a preferred embodiment to illustrate this case Details; the second figure shows the flow chart of the manufacturing method of this case; the third figure is a cross-sectional view, which includes; the substrate 3 1 'oxide layer 3 2, polycrystalline silicon 3 3, made by reflow of BPSG (Borophosphoro silicate glass) The dielectric layer 34, the first metal layer 35, the first dielectric layer 36, the SOG 37, the second dielectric layer 38, the via 39, the second metal layer 40 °, please refer to FIG. 2 And FIG. 3, the steps of the preferred embodiment of the present case include: 1) depositing a first layer of 2-3 KA oxide on the first metal layer 35 as the dielectric layer 36, the deposition method can be PECVD; 2 ) Coat 2-3 layers of Si loxane SOG 37;
3 )以4 2 5 °C，4 5分鐘的時間固化該s i 1 o x a n e S 0 G 3 7; 經濟部中央橾準局員工消費合作社印製 4) 做電漿處理，使該siloxane SOG 37被轉換 成 2-4KA 氮類 SOGCNitridized SOG ) 37; 5) 以PECVD方法沉積第二介電質層38 ; 其中，％電漿處理係以”In-situ”（同氣室/沉積前） 良紙張尺度適用中國國家標準（CNS ) A4規格（210X297公簇） 271003 at 沖加 271003 at 沖加 經濟部中央樣準局員工消費合作社印製 五、發明説明（4 ) 方式與步驟（5)於同一電漿沉積台內被完成》 6) 上光阻，並利用微影及鈾刻技術於第一金屬層35 之上形成一通孔39，俾第一金屬層35可藉該通孔39與第 二金屬層接觸； 7) 以0 2電漿及溶劑去除光阻； 8) 沈積第二層金屬40。 第四圖則表示了通孔39之放大圖。 由以上之敘述可了解，本案於第二次PECVD之前，以 ”In-situ”方式加了 電漿處理，使得原sil〇xane S0G 37被轉換成Nitridized S0G，這不僅可以使S0G 37於去除光阻時不再遭受〇2電槳侵襲，同時，藉著將氫 由S0G 37表面移去，可避免氫效應（Hydrogen effect)，因氫效應將導致熱載子效應，場逆轉（field inversion)及複晶負載電阻位移（Poly load resistance shifting)等之元件退化。 再者，於第二道PECVD時加以”In-situ”方式1<2電 漿處理，可將S0G 37氮化後至PECVD沉積間之擱置時間 (hold-time delay)減至最小，有效防止了 S0G 37表 面的水氣再吸附（Moisture Readsorption)，且並不 犧牲週轉時間。 本案得由熟悉本技藝之人士任施匠思，然皆不脫如附 申請專利範圍所欲保護者。 本纸張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） ,1T (請先閲讀背面之注意事項再填寫本頁)3) The si 1 oxane S 0 G 3 7 is cured at 4 2 5 ° C for 4 5 minutes; printed by the Consumer Cooperative of the Central Bureau of Economic Affairs of the Ministry of Economic Affairs 4) Plasma treatment is performed to convert the siloxane SOG 37 2-4KA nitrogen SOGCNitridized SOG) 37; 5) PECVD method is used to deposit the second dielectric layer 38; Among them, the% plasma treatment is "In-situ" (same gas chamber / before deposition) Good paper size is suitable China National Standards (CNS) A4 specification (210X297 public cluster) 271003 at Chongjia 271003 at the Chongka Ministry of Economic Affairs Central Prototype Bureau employee consumer cooperative printed five. Invention description (4) Method and step (5) deposited in the same plasma The stage is completed "6) The photoresist is applied, and a through hole 39 is formed on the first metal layer 35 using lithography and uranium engraving technology, so that the first metal layer 35 can contact the second metal layer through the through hole 39 7) Remove the photoresist with 0 2 plasma and solvent; 8) deposit a second layer of metal 40. The fourth figure shows an enlarged view of the through hole 39. It can be understood from the above description that before this second PECVD, the plasma treatment was added in the "In-situ" mode, so that the original sil〇xane S0G 37 was converted into Nitridized S0G, which not only allowed S0G 37 to remove light It will no longer be attacked by 〇2 propellers at the time of resistance, and at the same time, by removing hydrogen from the surface of SOG 37, the hydrogen effect (Hydrogen effect) can be avoided. The hydrogen effect will cause hot carrier effect, field inversion and field inversion. Elements such as poly load resistance shifting are degraded. Furthermore, the "In-situ" method 1 < 2 plasma treatment is applied during the second PECVD, which can minimize the hold-time delay between SOG 37 after nitriding and PECVD deposition, which effectively prevents Moisture Readsorption on the surface of SOG 37 without sacrificing turnaround time. In this case, anyone who is familiar with this skill can be considered as a carpenter, but none of them can be protected as attached to the scope of patent application. This paper scale is applicable to China National Standard (CNS) Α4 specification (210X297mm), 1T (please read the precautions on the back before filling this page)