JPH1187598A - Lead frame - Google Patents

Lead frame

Info

Publication number
JPH1187598A
JPH1187598A JP26803897A JP26803897A JPH1187598A JP H1187598 A JPH1187598 A JP H1187598A JP 26803897 A JP26803897 A JP 26803897A JP 26803897 A JP26803897 A JP 26803897A JP H1187598 A JPH1187598 A JP H1187598A
Authority
JP
Japan
Prior art keywords
lead
support bar
wide
narrow
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP26803897A
Other languages
Japanese (ja)
Inventor
Yoshiyasu Itou
義泰 伊東
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui High Tec Inc
Original Assignee
Mitsui High Tec Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui High Tec Inc filed Critical Mitsui High Tec Inc
Priority to JP26803897A priority Critical patent/JPH1187598A/en
Publication of JPH1187598A publication Critical patent/JPH1187598A/en
Pending legal-status Critical Current

Links

Landscapes

  • Lead Frames For Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To improve reliability and operativity in wire bonding by forming a support bar of a wide lead and a narrow lead and boring a rectangular through hole on a wide lead part in the vicinity of a border between the wide lead and the narrow lead. SOLUTION: A support bar 4 comprising a wide lead 2 and a narrow lead 3 which extend from an X-shaped pad 1 for example in X directions is formed. A rectangular through hole 12 is bored on the wide lead 2 in the vicinity of a border between the wide lead 2 and the narrow lead 3 forming the support bar 4, while mechanical strength is reduced by making a side of the through hole 12 to which the narrow lead 3 is connected short. Further, by making a structure where the narrow lead 3 is connected, a developed stress is concentrated to make it easy to deform in a lead lengthwise direction. Thus even if a stress due to difference in thermal expansion occurs, the support bar 4 deforms in the lead lengthwise direction to release the stress, so that deformation such as twisting, rotation, shift to right or left or the like can be prevented.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明はリードフレームに関
する。
[0001] 1. Field of the Invention [0002] The present invention relates to a lead frame.

【0002】[0002]

【従来の技術】半導体装置の製造では、ダイアタッチメ
ント工程でリードフレームのパッドに半導体チップを接
着剤例えば銀ペイストにより接着させ搭載している。該
接着は加熱作用を与える必要があり、例えば200℃程
度に加熱する。
2. Description of the Related Art In the manufacture of a semiconductor device, a semiconductor chip is mounted on a pad of a lead frame by an adhesive such as silver paste in a die attachment process. The bonding needs to provide a heating effect, and is heated to, for example, about 200 ° C.

【0003】リードフレーム材料の金属と半導体チップ
は熱膨張係数が異なるから、前記加熱され常温に戻る熱
履歴により必然的に熱膨張差による応力が発生し、パッ
ドを支持しているサポ−トバ−が、シフト、回転あるい
はねじれ等、変形する。なお、該変形はパッドが正方形
状、長方形状の場合も生じるが、X字状あるいは十字状
での場合が顕著である。
Since the metal of the lead frame material and the semiconductor chip have different coefficients of thermal expansion, a stress due to the difference in thermal expansion is inevitably generated due to the heat history of returning to normal temperature, and the support bar supporting the pad. Are deformed such as shift, rotation or torsion. The deformation may occur when the pad is square or rectangular, but is remarkable when the pad is X-shaped or cross-shaped.

【0004】パッドは、ディプレスと称されるように当
該パッドを支持しているサポ−トバ−の一部を下方に押
し下げることにより、インナーリード面より下げられる
こと多い。該ディプレスはパッドを下げることにより半
導体チップとインナーリードの距離及び上下高さの差を
減らして、ボンディングワイヤ−の長さを減じるととも
に短絡を防止し、さらに半導体装置を薄型にするためで
ある。
The pad is often lowered from the inner lead surface by pushing down a part of a support bar supporting the pad, which is called depressing. The depressing is to reduce the distance between the semiconductor chip and the inner lead and the height difference by lowering the pad, thereby reducing the length of the bonding wire and preventing a short circuit, and further reducing the thickness of the semiconductor device. .

【0005】しかし、前記変形がサポ−トバ−に生じる
と、前記ディプレスをしていてもその位置が変化するこ
との他に、後工程のワイヤ−ボンディングの際、例えば
サポ−トバ−がボンディング作業台のヒ−トブロックの
溝に入らずワイヤ−ボンディングが円滑に出来なかった
り、パッドが傾き引いては半導体チップが傾いて、この
点からもワイヤ−ボンディングに支障をきたす問題があ
る。また、前記パッドの傾きは半導体装置の薄型化への
大きな障害となる。
However, if the deformation occurs on the support bar, the position of the support bar will change even if the depressing is performed. There is a problem that the wire bonding cannot be performed smoothly because it does not enter the groove of the heat block of the worktable, or the semiconductor chip is tilted when the pad is tilted, which also hinders the wire bonding. In addition, the inclination of the pad becomes a major obstacle to the thinning of the semiconductor device.

【0006】前記サポ−トバ−の変形防止技術について
従来から提案されている。例えば、特開昭63−232
359号ではサポ−トバ−の一部をS字状に屈曲させる
こと、サポ−トバ−の一部に環状部材を設けること、あ
るいはしわ状部材を設けることが開示されている。これ
によるとサポ−トバ−を変形させようとする応力が吸収
され変形防止の作用がある。
A technique for preventing the deformation of the support bar has been proposed. For example, JP-A-63-232
No. 359 discloses that a part of the support bar is bent in an S-shape, that an annular member is provided on a part of the support bar, or that a wrinkled member is provided. According to this, the stress for deforming the support bar is absorbed, and there is an effect of preventing deformation.

【0007】[0007]

【この発明が解決しようとする課題】しかし、半導体装
置は、高集積度化、多機能化により半導体チップが比較
的大きくなり、前記パッドとの熱膨張差による熱応力は
増えサポ−トバ−に変形がみられる。特に、パッドがX
字状である場合には、図4にパッド部1とサポ−トバ−
4部を拡大して示すように回転、シフトあるいはねじれ
等、変形があり、前記ワイヤ−ボンディングに支障を起
こしている。また、パッドの傾きにより半導体装置の薄
型化が図れない問題がある。
However, in the semiconductor device, the semiconductor chip becomes relatively large due to the high integration and the multi-functionality, and the thermal stress due to the difference in thermal expansion with the pad increases, so that the semiconductor device is not supported. Deformation is seen. In particular, if the pad is X
FIG. 4 shows the pad portion 1 and the support bar.
As shown in an enlarged view of the four parts, there are deformations such as rotation, shift or twist, which hinder the wire bonding. In addition, there is a problem that the thickness of the semiconductor device cannot be reduced due to the inclination of the pad.

【0008】本発明はダイアタッチあるいは樹脂封止等
で熱履歴を受けてもサポ−トバ−が、回転、シフト、ね
じれ等せず、またパッドを傾かせることなく半導体チッ
プとインナーリードのワイヤ−ボンディングが信頼性及
び作業性よく行え、また薄い半導体装置の製造に有効な
リードフレームを目的とする。
According to the present invention, the support bar does not rotate, shift, twist, or the like even if it receives a heat history due to die attach or resin sealing, and the wire between the semiconductor chip and the inner lead is formed without tilting the pad. An object of the present invention is to provide a lead frame which can perform bonding with good reliability and workability and is effective for manufacturing a thin semiconductor device.

【0009】[0009]

【課題を解決するための手段】本発明の要旨は、サポ−
トバ−に支持されたパッドの周りにインナーリードを設
け、該インナーリードに連ねてアウターリードを設けた
リードフレームにおいて、前記サポ−トバ−が幅広リ−
トと幅狭リ−ドで形成され、前記幅広リ−ドと幅狭リ−
ドの境界近傍の幅広リ−ド部に角状貫通孔を穿設してい
るリードフレームにある。
SUMMARY OF THE INVENTION The gist of the present invention is to
In a lead frame provided with inner leads around pads supported by a bar and outer leads connected to the inner leads, the support bar has a wide lead.
And a wide lead and a narrow lead.
The lead frame has a square through hole formed in a wide lead portion near the boundary of the lead.

【0010】[0010]

【発明の実施の形態】次に本発明の1実施例について図
面を参照して述べる。この実施例ではパッドはX字状に
したリードフレームについて説明する。図面において、
1はX字状のパッドで、該パッド1からX方向にそれぞ
れ延長して幅広リ−ド2と幅狭リ−ド3とからなるサポ
−トバ−4が形成されている。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, an embodiment of the present invention will be described with reference to the drawings. In this embodiment, a lead frame in which pads are X-shaped will be described. In the drawing,
Numeral 1 denotes an X-shaped pad, and a support bar 4 consisting of a wide lead 2 and a narrow lead 3 is formed extending from the pad 1 in the X direction.

【0011】5は前記パッド1の周りに多数形成された
インナーリードで、該インナーリード5に連続してアウ
ターリード6が形成されている。7はタイバ−で、前記
インナーリード5とアウターリード6の境界に形成さ
れ、樹脂封止時の樹脂が外部へ流出するのを防止するも
のである。8は前記アウターリード6の背面側に形成さ
れたスリット、9はサイドレ−ル、10はガイドホ−ル
である。
Reference numeral 5 denotes a plurality of inner leads formed around the pad 1, and an outer lead 6 is formed continuously with the inner leads 5. Reference numeral 7 denotes a tie bar formed at the boundary between the inner lead 5 and the outer lead 6 to prevent the resin from leaking to the outside at the time of resin sealing. 8 is a slit formed on the back side of the outer lead 6, 9 is a side rail, and 10 is a guide hole.

【0012】前記パッド1には、その後、破線で示す半
導体チップ11が接着剤例えば銀ペイスト、エポキシ接
着剤等をつけ、前述のように加熱して接着搭載するが、
この際のリードフレーム材と半導体チップ11の熱膨張
差に起因する前記サポ−トバ−4の変形を生じさせない
ように次のようにしている。
After that, a semiconductor chip 11 indicated by a broken line is attached to the pad 1 with an adhesive such as silver paste or epoxy adhesive and heated and bonded as described above.
At this time, the support bar 4 is prevented from being deformed due to a difference in thermal expansion between the lead frame material and the semiconductor chip 11 as follows.

【0013】サポ−トバ−4を形成する前記幅広リ−ド
2と幅狭リ−ド3の境界近傍の幅広リ−ド2には四角状
貫通孔12を穿設し、該四角状貫通孔12の前記幅狭リ
−ド3が接続する側を短くして機械的強度を下げ、且つ
そこに幅狭リ−ド3が接続する構造とすることにより発
生する応力を集中してかからせリード長さ方向に変形容
易としている。これにより、前記熱膨張差による応力が
発生してもサポ−トバ−4はリ−ド長さ方向に変形して
当該応力を解放し、ねじれ、回転及び左右へのシフト等
の変形が防がれる。
A rectangular through hole 12 is formed in the wide lead 2 near the boundary between the wide lead 2 and the narrow lead 3 forming the support bar 4, and the rectangular through hole 12 is formed. The mechanical strength is reduced by shortening the side to which the narrow lead 3 is connected, and the stress generated by the structure in which the narrow lead 3 is connected thereto is concentrated. It is easy to deform in the lead length direction. As a result, even if the stress due to the difference in thermal expansion is generated, the support bar-4 is deformed in the lead length direction to release the stress, and deformation such as twisting, rotation, and shifting to the left and right is prevented. It is.

【0014】前記サポ−トバ−4の幅広リ−ド2に形成
する角状貫通孔は、この実施例の四角状貫通孔12に限
らず、図3の(a)に示す三角状貫通孔13、(b)に
示す台形状貫通孔14、(c)に示す鼓状貫通孔15、
(d)に示す2段角状貫通孔16等が採用される。
The square through-holes formed in the wide lead 2 of the support bar 4 are not limited to the square through-holes 12 of this embodiment, but may be triangular through-holes 13 shown in FIG. , (B) a trapezoidal through-hole 14, (c) a drum-shaped through-hole 15,
The two-stage rectangular through hole 16 shown in FIG.

【0015】本発明のリードフレーム17は前記のよう
に構成され、プレス法あるいはエッチング法により製造
することができる。パッド1には半導体チップ11が前
述のように接着剤を介して接着搭載され、半導体チップ
11の端子とインナーリード5がワイヤ−ボンディング
され、その後、樹脂封止される。
The lead frame 17 of the present invention is constructed as described above, and can be manufactured by a press method or an etching method. As described above, the semiconductor chip 11 is bonded and mounted on the pad 1 via the adhesive, and the terminals of the semiconductor chip 11 and the inner leads 5 are wire-bonded, and then are sealed with resin.

【0016】前記実施例ではX字状のパッド1に対する
サポ−トバ−4であったが、本発明は正方形あるいは長
方形など任意形状のパッドのサポ−トバ−に適用でき
る。
In the above-described embodiment, the support bar for the X-shaped pad 1 is used. However, the present invention can be applied to a support bar for a pad having an arbitrary shape such as a square or a rectangle.

【0017】[0017]

【発明の効果】本発明によると、サポ−トバ−の幅広リ
−ドと幅狭リ−ドの境界近傍の幅広リ−ド部に角状貫通
孔が穿設されているから、当該角状貫通孔の前記幅狭リ
−ド接続側が機械的強度が低下している。さらに当該機
械的強度の低下した部分の中間部に幅狭リ−ドが接続し
ているので、ダイアタッチで発生した熱応力を集中して
受け当該角状貫通孔背面が変形することで応力を吸収
し、サポ−トバ−にねじれ、回転及びシフトは発生しな
い。而して、ワイヤ−ボンディングは支障なく信頼性高
く行え、またパッドが傾くことがなく半導体装置の薄型
化に有効に寄与する等の効果がある。
According to the present invention, the rectangular through hole is formed in the wide lead portion near the boundary between the wide lead and the narrow lead of the support bar. The mechanical strength of the narrow lead connection side of the through hole is reduced. Further, since the narrow lead is connected to the middle part of the portion where the mechanical strength is reduced, the thermal stress generated by the die attach is concentrated and receives the stress by deforming the back surface of the square through hole. Absorption, twisting of the support bar, no rotation and no shift occur. Thus, the wire bonding can be performed with high reliability without hindrance, and there is an effect that the pads do not tilt and effectively contribute to the thinning of the semiconductor device.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の1実施例におけるリードフレームを示
す図。
FIG. 1 is a view showing a lead frame according to an embodiment of the present invention.

【図2】本発明の1実施例での作用を説明するための
図。
FIG. 2 is a diagram for explaining an operation in one embodiment of the present invention.

【図3】本発明によるサポ−トバ−の各種の形状を示す
図。
FIG. 3 is a view showing various shapes of a support bar according to the present invention.

【図4】従来のリードフレームのサポ−トバ−の問題を
説明するための図。
FIG. 4 is a view for explaining a problem of a support bar of a conventional lead frame.

【符号の説明】[Explanation of symbols]

1 パッド 2 幅広リ−ド 3 幅狭リ−ド 4 サポ−トバ− 5 インナーリード 6 アウターリード 7 タイバ− 8 スリット 9 サイドレ−ル 10 ガイドホ−ル 11 半導体チップ 12 四角状貫通孔 13 三角状貫通孔 14 台形状貫通孔 15 鼓状貫通孔 16 2段角状貫通孔 17 リードフレーム DESCRIPTION OF SYMBOLS 1 Pad 2 Wide lead 3 Narrow lead 4 Support bar 5 Inner lead 6 Outer lead 7 Tie bar 8 Slit 9 Side rail 10 Guide hole 11 Semiconductor chip 12 Square through hole 13 Triangular through hole 14 trapezoidal through-hole 15 drum-shaped through-hole 16 two-step square-shaped through-hole 17 lead frame

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 サポ−トバ−に支持されたパッドの周り
にインナーリードを設け、該インナーリードに連ねてア
ウターリードを設けたリードフレームにおいて、前記サ
ポ−トバ−が幅広リ−トと幅狭リ−ドで形成され、前記
幅広リ−ドと幅狭リ−ドの境界近傍の幅広リ−ド部に角
状貫通孔を穿設していることを特徴とするリードフレー
ム。
1. A lead frame having an inner lead provided around a pad supported by a support bar and an outer lead connected to the inner lead. A lead frame formed of a lead, wherein a square through hole is formed in a wide lead portion near a boundary between the wide lead and the narrow lead.
JP26803897A 1997-09-12 1997-09-12 Lead frame Pending JPH1187598A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26803897A JPH1187598A (en) 1997-09-12 1997-09-12 Lead frame

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26803897A JPH1187598A (en) 1997-09-12 1997-09-12 Lead frame

Publications (1)

Publication Number Publication Date
JPH1187598A true JPH1187598A (en) 1999-03-30

Family

ID=17453018

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26803897A Pending JPH1187598A (en) 1997-09-12 1997-09-12 Lead frame

Country Status (1)

Country Link
JP (1) JPH1187598A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007324407A (en) * 2006-06-01 2007-12-13 Mitsubishi Electric Corp Optical module
JP2015138881A (en) * 2014-01-22 2015-07-30 古河電気工業株式会社 Substrate and method for manufacturing substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007324407A (en) * 2006-06-01 2007-12-13 Mitsubishi Electric Corp Optical module
JP2015138881A (en) * 2014-01-22 2015-07-30 古河電気工業株式会社 Substrate and method for manufacturing substrate

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