JPH1186723A - Thick-film pattern forming method for plasma display substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve productivity, increase yielding, and obtain good line width precision. SOLUTION: A pattern-forming material 2 for forming an electrode pattern on a substrate 1 is applied with a given film thickness, the substrate 1 is heated to laminate a dry film 3 at the top of the pattern-forming material 2, the dry film 3 is patterned by photolithographic method for forming a sandblast mask 6 according to a desired pattern, and an unnecessary part is removed by a sandblast 7 via that sandblast mask 6, thereby to form a target electrode pattern. A thick film pattern can be obtained with a one-time operation. In the sandblast mask 6, the dry film 3 is processed and formed by the photolithographic method, thus enabling coping with a high precision pattern.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming an electrode pattern on a plasma display substrate in a process of manufacturing the plasma display panel.

[0002]

2. Description of the Related Art Conventionally, as a method of forming a thick film pattern on a plasma display substrate, a paste for a conductor or an insulator is printed in a pattern on a glass or ceramic substrate by screen printing, and then the paste is dried. There is known a method of forming a thick film pattern by repeating a firing step. Recently, forming a thick film pattern with a ceramic material on a substrate such as glass has been performed in various fields. In this case, too, the ceramic material is dispersed in a binder to form a paste. In the same manner as described above, a thick film pattern is formed by repeating the steps of performing overprinting by screen printing, followed by drying and firing.

[0003]

In a conventional method of forming a thick film pattern on a plasma display substrate by screen printing, as described above, overprinting is performed by a plurality of times of screen printing to obtain a predetermined thickness. However, this method requires 5 to 10 overprints in order to obtain a thick film of, for example, 50 to 100 μm, each time requiring a drying step, and as a result, the productivity is extremely poor and the yield is low. There was a problem that it reduced. Further, there is a problem that the line width accuracy of the pattern is impaired due to the viscosity of the paste, thixotropy and the like.

The present invention has been made in order to solve such problems of the prior art, and a plasma display capable of improving productivity, improving yield, and obtaining good line width accuracy. It is an object of the present invention to provide a method for forming a thick film pattern on a substrate.

[0005]

In order to achieve the above object, a method for forming a thick film pattern on a plasma display substrate according to the present invention comprises the steps of: forming a pattern forming material for forming an electrode pattern on a plasma display substrate; After applying a thick film, heating the substrate and laminating a dry film on the pattern forming material, the dry film is patterned by photolithography to form a sand blast mask according to a desired pattern, and the sand blast mask A target electrode pattern is obtained by performing a sand blasting process through the substrate.

This method of forming a thick film pattern will be specifically described with reference to FIG. First, as shown in (a), a pattern forming material 2 is applied on a glass substrate 1, the substrate is heated to laminate a dry film 3 on the pattern forming material 2, and then an exposure suitable for a target pattern is performed. By exposing with ultraviolet rays 5 through the mask 4 and then developing,
As shown in (b), a sand blast mask 6 made of the dry film 3 is formed on the upper surface of the pattern forming material 2. Thereafter, as shown in (c), an unnecessary portion is removed by sandblasting 7 to form a pattern. Next, by performing firing or chemical treatment, as shown in (d), the sandblast mask 6 is removed to obtain a target thick film pattern.

[0007]

According to the method for forming a thick film pattern having the above-mentioned structure, after an electrode pattern forming material is applied on a substrate to a predetermined thickness, an unnecessary portion is removed by sandblasting through a mask, so that an ultimately necessary material is removed. Is formed in a single operation.

[0008]

An embodiment will be described with reference to the drawings.

FIGS. 2 and 3 are process diagrams showing an embodiment of a method for forming a thick film pattern on a plasma display substrate according to the present invention. FIG. 2 shows a process for forming an electrode pattern, and FIG. 3 shows a step of forming a barrier between them.

In this embodiment, a photocurable dry film (OSBR film, manufactured by Tokyo Ohka Kogyo Co., Ltd.) was used as a dry film constituting the sandblast mask. However, this selection does not limit the present invention, and an appropriate dry film may be appropriately selected according to the target pattern dimensions, the type of the pattern forming material, and the suitability as a mask for sandblasting.

Hereinafter, each step shown in FIG. 2 will be described step by step.

First, as shown in FIG.
Electrode paste 12 which is an electrode pattern forming material
Was applied by screen printing to have a thickness of 20 μm. Then, in order to remove the solvent contained in the organic binder in the electrode paste 12, 100 to 16
After drying at 0 ° C., it was subjected to the next step. Then, (b)
As shown in FIG. 1, the substrate 11 is heated to 50 to 80 ° C., and the dry film 1 constituting the above-mentioned sandblast mask is formed.
After laminating No.3, as shown in (c), a parallel light having a line width of 60
Pattern exposure was performed using ultraviolet rays 15 through a line pattern mask 14 having a pitch of 120 μm and a pitch of 120 μm. The exposure conditions are as follows: when measured at 365 nm, the intensity is 200 μw / c.
m ² , and the irradiation amount is 70 mJ / cm ² . Then, (d)
In the developing step shown in the above, 0.2% by weight of anhydrous sodium carbonate
Spray development was performed with an aqueous solution at a liquid temperature of 30 to 50 ° C. The line width is 60 μm and the pitch is 120 μm by the above steps.
Was obtained. After that, through a drying step, the unnecessary portion was removed by the sandblast 17 in (e). Here, by using brown fused alumina # 800 as an abrasive and performing sandblasting at an ejection pressure of 1 kg / cm ² , a line width of 60 μm was obtained.
A pattern of the electrode 18 having a pitch of 120 μm and a height of 20 μm was obtained.

Next, the steps shown in FIG. 3 will be described step by step.

First, as shown in FIG. 2A, a ceramic material 19 as a barrier pattern forming material is applied to the substrate 11 from above the pattern obtained in the step of FIG. 2 by a blade coating method to have a thickness of 200 μm. . And 100
Drying was performed at 〜160 ° C. and provided for the next step. Then
As shown in (b), after heating the substrate to 50 to 80 ° C. and laminating the same dry film 20 as described above, as shown in (c), the line width is 60 μm, and the pitch is 120 μm.
Pattern exposure was performed by ultraviolet rays 22 through a μm line pattern mask 21. The exposure conditions are the same as in the case of FIG. Subsequently, development was performed under the same conditions as described above to obtain a sandblast mask 23 having a line width of 60 μm and a pitch of 120 μm as shown in FIG. Then, in the step (e) of removing unnecessary portions by sandblasting 24, brown fused alumina # 400 is used as an abrasive, and sandblasting is performed at an ejection pressure of 3 kg / cm ² to obtain a line width of 60 μm, a pitch of 120 μm, and a height of 120 μm. A 200 μm barrier 25 pattern of the ceramic material was obtained. At this time, the mask 1 above the electrode 18
6 remains, which protects the surface of the electrode 18, so that the electrode 18 is not damaged. Then, in the subsequent step (f), baking is performed under the conditions of a peak temperature of 585 ° C. and a holding time of 10 to 20 minutes to bind the electrode 18 and the barrier 25 on the glass substrate 11 and at the same time, simultaneously with the sandblast , 23 were burned. Through the above steps, the line width is 60 μm, the pitch is 120 μm, and the height is 18 μm.
m electrode 18, line width 60 μm, pitch 120 μm,
A thick film pattern of the barrier 25 having a height of 180 μm was obtained.

[0015]

Since the present invention is configured as described above, the following effects can be obtained.

Since a thick film pattern can be obtained by one operation, the processing time is shortened and an operation such as positioning is performed one time as compared with the conventional lamination method of forming a thick film pattern by screen printing. Therefore, the process can be simplified.

Further, by using a photolithography method for forming a sandblast mask, it is possible to cope with a high-definition pattern and an increase in the size of a substrate.

[Brief description of the drawings]

FIG. 1 is a process diagram illustrating a method of forming a thick film pattern on a plasma display substrate according to the present invention.

FIG. 2 is a process diagram of forming an electrode pattern.

FIG. 3 is a process diagram of forming a barrier pattern.

[Explanation of symbols]

 Reference Signs List 1 glass substrate 2 pattern forming material 3 dry film 4 exposure mask 5 ultraviolet ray 6 sand blast mask 7 sand blast 11 glass substrate 12 electrode paste 13 dry film 14 line pattern mask 15 ultraviolet ray 16 sand blast mask 17 sand blast 18 electrode 19 ceramic material 20 dry film DESCRIPTION OF SYMBOLS 21 Line pattern mask 22 Ultraviolet ray 23 Sand blast mask 24 Sand blast 25 Barrier

Claims (1)

[Claims] 1. A pattern forming material for forming an electrode pattern is applied on a substrate of a plasma display in a predetermined thickness in advance, and the substrate is heated to laminate a dry film on the pattern forming material. Forming a mask for sandblasting according to a desired pattern by patterning by a photolithography method, and performing a sandblasting process through the mask for sandblasting, thereby obtaining an intended electrode pattern. A method for forming a thick film pattern.