JP3240997B2 - Method for forming thick film pattern electrode on plasma display substrate - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a thick-film pattern electrode on a plasma display substrate, in which a thick-film pattern electrode is formed on the plasma display substrate in a process of manufacturing the plasma display panel.

[0002]

2. Description of the Related Art Conventionally, as a method of forming a thick film pattern on a plasma display substrate, a paste for a conductor or an insulator is printed in a pattern on a glass or ceramic substrate by screen printing, and then the paste is dried. There is known a method of forming a thick film pattern by repeating a firing step. Recently, forming a thick film pattern with a ceramic material on a substrate such as glass has been performed in various fields. In this case, too, the ceramic material is dispersed in a binder to form a paste. In the same manner as described above, a thick film pattern is formed by repeating the steps of performing overprinting by screen printing, followed by drying and firing.

[0003]

In a conventional method of forming a thick film pattern on a plasma display substrate by screen printing, as described above, overprinting is performed by a plurality of times of screen printing to obtain a predetermined thickness. However, this method requires 5 to 10 overprints in order to obtain a thick film of, for example, 50 to 100 μm, each time requiring a drying step, and as a result, the productivity is extremely poor and the yield is low. There was a problem that it reduced. Further, there is a problem that the line width accuracy of the pattern is impaired due to the viscosity of the paste, thixotropy and the like.

The present invention has been made to solve such problems of the prior art, and is a plasma display capable of improving productivity, improving yield, and obtaining excellent line width accuracy. It is an object of the present invention to provide a method of forming a thick film pattern electrode on a substrate.

[0005]

To achieve SUMMARY OF to the above objects, thick film pattern electrode forming method of a plasma display substrate of the present invention, on a substrate of a plasma display, a pattern forming material for forming a thick film pattern electrodes An electrode
The paste is applied in a predetermined thickness in advance and the electrode paste
Dry to remove the solvent contained in the organic binder
After drying , the substrate is heated and a dry film is laminated on the upper part of the pattern forming material. Then, the dry film is patterned by a photolithography method to form a sand blast mask according to a desired pattern, and the sand blast mask is formed. The present invention is characterized in that a target thick film pattern electrode is obtained by performing a sand blast treatment through a mask and finally performing a baking .

The method of forming the thick film pattern electrode will be described in detail with reference to FIG. First, as shown in (a), a pattern forming material 2 is applied on a glass substrate 1, the substrate is heated to laminate a dry film 3 on the pattern forming material 2, and then an exposure suitable for a target pattern is performed. Mask 4
By exposing with ultraviolet rays 5 through the substrate, and developing, a sand blast mask 6 made of the dry film 3 is formed on the upper surface of the pattern forming material 2 as shown in FIG. Thereafter, as shown in (c), an unnecessary portion is removed by sandblasting 7 to form a pattern. Next, by firing or performing chemical treatment, as shown in FIG.
To obtain a target thick film pattern electrode .

[0007]

According to the method for forming a thick-film pattern electrode having the above-mentioned structure, after a material for forming a thick-film pattern electrode is applied on a substrate to a predetermined thickness, an unnecessary portion is removed by sandblasting through a mask. Of the required thickness
Thick film pattern electrodes are formed in one operation.

[0008]

An embodiment will be described with reference to the drawings.

2 and 3 are process diagrams showing an embodiment of a method for forming a thick film pattern on a plasma display substrate according to the present invention. FIG. 2 shows a process for forming a thick film pattern electrode , and FIG. The step of forming a barrier between the electrodes is shown.

In this embodiment, a photocurable dry film (OSBR film, manufactured by Tokyo Ohka Kogyo Co., Ltd.) was used as a dry film constituting the sandblast mask. However, this selection does not limit the present invention, and an appropriate dry film may be appropriately selected according to the target pattern dimensions, the type of pattern forming material, and the suitability as a mask for sandblasting.

Hereinafter, each step shown in FIG. 2 will be described step by step.

First, as shown in FIG.
An electrode paste 12 which is a material for forming a thick film pattern electrode is applied by screen printing onto
And Then, in order to remove the solvent contained in the organic binder in the electrode paste 12, 100 to 100
After drying at 160 ° C., it was subjected to the next step. Then
As shown in (b), after heating the substrate 11 to 50 to 80 ° C. and laminating the dry film 13 constituting the above-mentioned sandblast mask, as shown in (c),
Using a printer, collimated light with an ultra-high pressure mercury lamp as the light source,
Pattern exposure was performed by ultraviolet rays 15 through a line pattern mask 14 having a line width of 60 μm and a pitch of 120 μm. Exposure conditions are as follows: when measured at 365 nm, intensity 20
0 μw / cm ² and irradiation amount 70 mJ / cm ² . Subsequently, in the developing step shown in (d), spray development was performed at a liquid temperature of 30 to 50 ° C. using a 0.2 wt% aqueous solution of anhydrous sodium carbonate. Through the above steps, a sand blast mask 16 having a line width of 60 μm and a pitch of 120 μm was obtained.
After that, through a drying step, the unnecessary portion was removed by the sandblast 17 in (e). Here, brown fused alumina # 800 was used as the abrasive, and the ejection pressure was 1 kg.
/ Cm ² , an electrode 18 having a line width of 60 μm, a pitch of 120 μm, and a height of 20 μm is obtained.
Pattern was obtained.

Next, the steps shown in FIG. 3 will be described step by step.

First, as shown in FIG. 2A, a ceramic material 19 as a barrier pattern forming material is applied to the substrate 11 from above the pattern obtained in the step of FIG. 2 by a blade coating method to a thickness of 200 μm. . And 100
Drying was performed at 〜160 ° C. and provided for the next step. Then
As shown in (b), after heating the substrate to 50 to 80 ° C. and laminating the same dry film 20 as described above, as shown in (c), the line width is 60 μm, and the pitch is 120.
Pattern exposure was performed by ultraviolet rays 22 through a μm line pattern mask 21. The exposure conditions are the same as in the case of FIG. Subsequently, development was performed under the same conditions as described above to obtain a sandblast mask 23 having a line width of 60 μm and a pitch of 120 μm as shown in FIG. Then, in the step (e) of removing unnecessary portions by sandblasting 24, brown fused alumina # 400 is used as an abrasive, and sandblasting is performed at an ejection pressure of 3 kg / cm ² to obtain a line width of 60 μm, a pitch of 120 μm, and a height of 120 μm. A 200 μm barrier 25 pattern of the ceramic material was obtained. At this time, the mask 1 above the electrode 18
6 remains, which protects the surface of the electrode 18, so that the electrode 18 is not damaged. Then, in the subsequent step (f), baking is performed under the conditions of a peak temperature of 585 ° C. and a holding time of 10 to 20 minutes to bind the electrode 18 and the barrier 25 on the glass substrate 11 and at the same time, to form the sand blast mask 16. , 23 were burned. Through the above steps, the line width is 60 μm, the pitch is 120 μm, and the height is 18 μm.
m electrode 18, line width 60 μm, pitch 120 μm,
A thick film pattern of the barrier 25 having a height of 180 μm was obtained.

[0015]

Since the present invention is configured as described above, the following effects can be obtained.

[0016] Since one operation in the thick film pattern is obtained, a thick film pattern conductive by screen printing so far
Processing time is shortened compared to the lamination method of pole formation,
Since only one operation such as alignment is required, the process can be simplified.

Further, by using a photolithography method for forming a sandblast mask, it is possible to cope with a high-definition pattern and an increase in the size of a substrate.

[Brief description of the drawings]

FIG. 1 is a process diagram illustrating a method of forming a thick film pattern on a plasma display substrate according to the present invention.

FIG. 2 is a process diagram of forming an electrode pattern.

FIG. 3 is a process chart of barrier pattern formation.

[Explanation of symbols]

 Reference Signs List 1 glass substrate 2 pattern forming material 3 dry film 4 exposure mask 5 ultraviolet ray 6 sand blast mask 7 sand blast 11 glass substrate 12 electrode paste 13 dry film 14 line pattern mask 15 ultraviolet ray 16 sand blast mask 17 sand blast 18 electrode 19 ceramic material 20 dry film DESCRIPTION OF SYMBOLS 21 Line pattern mask 22 Ultraviolet ray 23 Sand blast mask 24 Sand blast 25 Barrier

 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-3-127429 (JP, A) JP-A-51-142670 (JP, A) JP-A-64-67840 (JP, A) JP-A 60-67429 34092 (JP, A) Japan Printed Circuit Manufacturers Association, “Printed Circuit Technology Handbook”, Nikkan Kogyo Shinbunsha, February 28, 1977, p. 480−485

Claims (1)

(57) [Claims] To 1. A plasma display substrate, a pattern forming material for forming a thick film pattern electrode electrode pair
Is applied in a predetermined thickness in advance, and the paste
Dry to remove solvent contained in organic binder
After performing , after laminating a dry film on top of the pattern forming material by heating the substrate, patterning the dry film by photolithography to form a sandblasting mask according to the desired pattern,
A method for forming a thick film pattern electrode on a plasma display substrate, wherein a target thick film pattern electrode is obtained by performing a sand blasting process through the sand blast mask and finally performing a baking .