JPH1184645A - Photosensitive resin composition - Google Patents

Photosensitive resin composition

Info

Publication number
JPH1184645A
JPH1184645A JP24801797A JP24801797A JPH1184645A JP H1184645 A JPH1184645 A JP H1184645A JP 24801797 A JP24801797 A JP 24801797A JP 24801797 A JP24801797 A JP 24801797A JP H1184645 A JPH1184645 A JP H1184645A
Authority
JP
Japan
Prior art keywords
photosensitive
polyimide resin
resin composition
diazoquinone compound
photosensitive resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24801797A
Other languages
Japanese (ja)
Other versions
JP3458669B2 (en
Inventor
Satoshi Akimoto
聡 秋本
Masaaki Kakimoto
雅明 柿本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP24801797A priority Critical patent/JP3458669B2/en
Publication of JPH1184645A publication Critical patent/JPH1184645A/en
Application granted granted Critical
Publication of JP3458669B2 publication Critical patent/JP3458669B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To obtain a photosensitive resin composition superior in photosensitive and resolution and film endurance and unnecessary for heating at high temperature and advantageous from the view point of safety and environment maintenance and developable in an aqueous solution of alkal by using a combination of a specified polyimide resin and a photosensitive diazoquinone compound. SOLUTION: This resin composition comprises at least the polyimide resin composed of structural units represented by the formula and the photosensitive diazoquinone compound. In the formula, X is a tetravalent organic group. 2-100 pts.wt. of this diazoquinone compound is mixed with 100 pts.wt. of the resin. The photosensitive diazoquinone compound is an o-naphthoquinondiazidosulfonic acid derivative. Acid dianhydrides for composing the polyimide resin is 2,2-bis(3,4 dicarboxyphenyl)-1,1,1,3,3,3-hexafluoropropane dianhydrides. The polyimide resin can be prepared with a dmiamine compound and tetracarboxylic acid dianhydrides.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体素子用保護
絶縁膜、液晶表示素子用配向膜、多層プリント基板用絶
縁膜等の用途に有効に使用される感光性樹脂組成物に関
するものであり、特に、該組成物を硬化させてなる耐熱
性電子部品用保護膜に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photosensitive resin composition which is effectively used for applications such as a protective insulating film for a semiconductor device, an alignment film for a liquid crystal display device, and an insulating film for a multilayer printed circuit board. In particular, it relates to a heat-resistant protective film for electronic parts obtained by curing the composition.

【0002】[0002]

【従来の技術】従来より半導体素子の表面保護膜、層間
絶縁膜には、耐熱性が優れ、また卓越した電気特性、機
械特性などを有するポリイミド樹脂が用いられている
が、近年の半導体素子の高集積化、封止樹脂パッケージ
の薄型化、小型化、半田リフローによる表面実装への移
行などにより耐熱サイクル性、耐熱ショック性等の著し
い向上の要求があり、更に高性能なポリイミド樹脂が必
要とされるようになってきた。
2. Description of the Related Art Conventionally, a polyimide resin having excellent heat resistance and excellent electrical and mechanical properties has been used for a surface protective film and an interlayer insulating film of a semiconductor element. There is a demand for remarkable improvement in heat cycle resistance and heat shock resistance due to high integration, thinning and miniaturization of the encapsulation resin package, and the shift to surface mounting by solder reflow. It has come to be.

【0003】一方、近年、パターン作成工程の一部が簡
略化でき、工程短縮が可能となるポリイミド樹脂自身に
感光性を付与したいわゆる感光性ポリイミドの技術が注
目を集めてきている。例えば、特開昭49―11554
1号公報や特開昭55―45746号公報ではポリアミ
ック酸のカルボキシル基にエステル結合により感光基を
導入したものからなる材料、また、特開昭60―100
143号公報ではポリアミック酸のカルボキシル基にア
ミド結合により感光基を導入したものからなる材料等が
提案されているが、これらの材料は、現像時におけるフ
ィルムの膨潤があること、また現像の際に N−メチル−
2 −ピロリドン等の有機溶剤が必要になるため、安全面
や環境面からその管理のための膨大な設備等を要すると
いう問題点があった。
On the other hand, in recent years, a technique of a so-called photosensitive polyimide, in which a part of a pattern forming process can be simplified and the process can be shortened, is imparted with a photosensitivity to a polyimide resin itself, has attracted attention. For example, JP-A-49-11554
No. 1 and JP-A-55-45746 disclose a material comprising a carboxyl group of a polyamic acid having a photosensitive group introduced through an ester bond.
No. 143 proposes a material comprising a photosensitive group introduced into a carboxyl group of a polyamic acid by an amide bond, and the like. However, these materials have a problem that the film swells at the time of development, and that at the time of development, N-methyl-
Since an organic solvent such as 2-pyrrolidone is required, there has been a problem that enormous equipment and the like are required for its management in terms of safety and environment.

【0004】そこで近年では、アルカリ水溶液現像がで
きるポジ型の感光性樹脂が開発されている。例えば、特
開平2―181149号公報にはエステル化ポリアミド
酸ポリマーと感光性キノンジアジドとからなる感光性樹
脂組成物が提案されている。この感光性樹脂組成物は、
ビアホール部の除去をアルカリ水溶液を用いて行うた
め、従来の感光性ポリイミド樹脂のように現像に有機溶
剤は必要としないので、作業時等における安全面や環境
面に対する対策では非常に優位なものとなっている。
Therefore, in recent years, a positive photosensitive resin which can be developed with an alkaline aqueous solution has been developed. For example, JP-A-2-181149 proposes a photosensitive resin composition comprising an esterified polyamic acid polymer and a photosensitive quinonediazide. This photosensitive resin composition,
Since the removal of the via hole is performed using an aqueous alkaline solution, no organic solvent is required for development unlike the conventional photosensitive polyimide resin, so it is very advantageous in terms of safety and environmental measures at the time of work etc. Has become.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、上記従
来の感光性ポリイミド樹脂はいずれもポリイミド樹脂の
前駆体であるポリアミック酸に感光性を付与したもので
あり、最終的にポリアミック酸からポリイミド樹脂へ転
化(イミド化)させるには、300℃以上の高温で加熱
処理をしなければならず、この熱に耐えられる基板ある
いは素子上でしか使用することができないということ、
また、イミド化時に得られたパターンの熱による体積収
縮等、寸法変化が大きく、寸法安定性に問題があった。
However, all of the above-mentioned conventional photosensitive polyimide resins are obtained by imparting photosensitivity to polyamic acid, which is a precursor of the polyimide resin, and finally converted from the polyamic acid to the polyimide resin. (Imidization) requires heat treatment at a high temperature of 300 ° C. or more, and can be used only on a substrate or an element that can withstand this heat;
In addition, the pattern obtained at the time of imidization has a large dimensional change such as volume shrinkage due to heat, and there is a problem in dimensional stability.

【0006】本発明は、かかる上記従来技術の問題点を
解決するものであり、その課題とするところは、現像時
のフィルムに膨潤がなく、また作業上安全で環境問題に
も優位なアルカリ水溶液で現像が可能であり、また高熱
による加熱処理を必要としない新規な感光性樹脂組成物
を提供することにある。
The present invention solves the above-mentioned problems of the prior art, and an object of the present invention is to provide an alkaline aqueous solution which is free from swelling in a film at the time of development, is safe in operation, and is superior in environmental problems. It is another object of the present invention to provide a novel photosensitive resin composition which can be developed by using a photosensitive resin composition and does not require heat treatment with high heat.

【0007】[0007]

【課題を解決するための手段】本発明に於いて上記課題
を達成するために、まず請求項1の発明では、少なくと
も、上記一般式(1)で表される構成単位からなるポリ
イミド樹脂(A)と、感光性ジアゾキノン化合物(B)
とを含有してなることを特徴とする感光性樹脂組成物と
したものである。
Means for Solving the Problems In order to achieve the above object in the present invention, first, in the invention of claim 1, at least a polyimide resin (A) comprising a structural unit represented by the above general formula (1) ) And a photosensitive diazoquinone compound (B)
And a photosensitive resin composition characterized by containing

【0008】また、請求項2の発明では、前記感光性ジ
アゾキノン化合物(B)は、ポリイミド樹脂(A)10
0重量部当たり、2〜100重量部の量に配合されてな
ることを特徴とする感光性樹脂組成物としたものであ
る。
In the invention of claim 2, the photosensitive diazoquinone compound (B) is a polyimide resin (A) 10
A photosensitive resin composition characterized by being blended in an amount of 2 to 100 parts by weight per 0 parts by weight.

【0009】また、請求項3の発明では、前記感光性ジ
アゾキノン化合物(B)が、o―ナフトキノンジアジド
スルホン酸誘導体であることを特徴とする感光性樹脂組
成物としたものである。
According to a third aspect of the present invention, there is provided a photosensitive resin composition wherein the photosensitive diazoquinone compound (B) is an o-naphthoquinonediazidosulfonic acid derivative.

【0010】また、請求項4の発明では、前記ポリイミ
ド樹脂(A)を構成する酸二無水物が、2,2−ビス(3,
4 −ジカルボキシフェニル)−1, 1, 1, 3, 3, 3−ヘ
キサフルオロプロパン二無水物であることを特徴とする
感光性樹脂組成物としたものである。
In the invention of claim 4, the acid dianhydride constituting the polyimide resin (A) is 2,2-bis (3,2
4-dicarboxyphenyl) -1,1,1,3,3,3-hexafluoropropane dianhydride.

【0011】[0011]

【発明の実施の形態】以下本発明の実施の形態を詳しく
説明する。本発明の感光性樹脂組成物は、少なくとも、
上記一般式(1)で表される構成単位からなるポリイミ
ド樹脂(A)と、感光性ジアゾキノン化合物(B)とを
含有してなることを特徴とするものであり、そのポリイ
ミド樹脂(A)は、例えば、ジアミン化合物とテトラカ
ルボン酸二無水物から容易に製造することができるもの
である。
Embodiments of the present invention will be described below in detail. The photosensitive resin composition of the present invention, at least,
It is characterized by containing a polyimide resin (A) comprising a structural unit represented by the general formula (1) and a photosensitive diazoquinone compound (B), and the polyimide resin (A) For example, it can be easily produced from a diamine compound and a tetracarboxylic dianhydride.

【0012】上記のジアミン化合物とは、4, 4' −ジア
ミノ−4"−ヒドロキシトリフェニルアミンを指し、この
ジアミンは例えば、p−ハロニトロベンゼンと 4−ベン
ジルオキシアニリンを出発原料として容易に製造でき
る。具体的に一例を示すと、4−ベンジルオキシアニリ
ンと p−クロロベンゼンをジメチルスルホキシド中、10
0℃で反応させ、得られた化合物を再結晶した後に還
元、脱保護を行うことにより得られる。
The above diamine compound refers to 4,4'-diamino-4 "-hydroxytriphenylamine. This diamine can be easily produced, for example, using p-halonitrobenzene and 4-benzyloxyaniline as starting materials. As a specific example, 4-benzyloxyaniline and p-chlorobenzene are mixed with dimethyl sulfoxide in 10%.
It is obtained by reacting at 0 ° C., recrystallizing the obtained compound, and then performing reduction and deprotection.

【0013】上記一般式(1)で表されるテトラカルボ
ン酸二無水物としては、ピロメリト酸二無水物、3, 4,
3' , 4’−ビフェニルテトラカルボン酸二無水物、3,
4, 3',4'−ジフェニルエーテルテトラカルボン酸二無水
物、3, 4, 3', 4'−ベンゾフェノンテトラカルボン酸二
無水物、3, 4, 3', 4'−ジフェニルスルホンテトラカル
ボン酸二無水物、2,2−ビス(3, 4−ジカルボキシフェ
ニル)−1, 1, 1, 3,3, 3−ヘキサフルオロプロパン二
無水物、3, 4, 3", 4"−ターフェニルテトラカルボン酸
二無水物等のテトラカルボン酸二無水物を例示すること
ができる.これらのテトラカルボン酸類は、その一種の
みを用いてもよく、また二種以上を併用しても差し支え
ない。
The tetracarboxylic dianhydride represented by the general formula (1) includes pyromellitic dianhydride, 3, 4,
3 ', 4'-biphenyltetracarboxylic dianhydride, 3,
4,3 ', 4'-diphenylethertetracarboxylic dianhydride, 3,4,3', 4'-benzophenonetetracarboxylic dianhydride, 3,4,3 ', 4'-diphenylsulfonetetracarboxylic dianhydride Anhydride, 2,2-bis (3,4-dicarboxyphenyl) -1,1,1,3,3,3-hexafluoropropane dianhydride, 3,4,3 ", 4" -terphenyltetra Examples thereof include tetracarboxylic dianhydrides such as carboxylic dianhydride. These tetracarboxylic acids may be used alone or in combination of two or more.

【0014】本発明におけるポリイミド樹脂の製造方法
の一例を示すと、有機溶媒中、ジアミン化合物とテトラ
カルボン酸二無水物とを−20〜50℃で数分間から数日間
反応させることにより、ポリアミド酸を得、次いで加熱
もしくは脱水閉環剤による処理によりポリイミド樹脂を
得るものである。このポリアミド酸の合成反応に使用で
きる有機溶媒としては、N,N−ジメチルアセトアミド、N
−メチル−2ーピロリドン等のアミド系溶媒、ベンゼ
ン、アニソール、ジフェニルエーテル、ニトロベンゼ
ン、ベンゾニトリル、ピリジンのような芳香族系溶媒、
クロロホルム、ジクロロメタン、1,2 −ジクロロエタ
ン、1,1,2,2−テトラクロロエタンのようなハロゲン
系溶媒、テトラヒドロフラン、ジオキサン、ジグリムの
ようなエーテル系溶媒等を例示することができる。特に
N,N−ジメチルアセトアミドや、N−メチルー2−ピロリ
ドン等のアミド系溶媒を使用すると、高重合体のポリア
ミド酸を得ることができる。
An example of the method for producing a polyimide resin according to the present invention is as follows. A polyamic acid is prepared by reacting a diamine compound with a tetracarboxylic dianhydride in an organic solvent at -20 to 50 ° C. for several minutes to several days. And then heating or treating with a dehydrating ring-closing agent to obtain a polyimide resin. Organic solvents that can be used in the synthesis reaction of this polyamic acid include N, N-dimethylacetamide, N
Amide solvents such as -methyl-2-pyrrolidone, benzene, anisole, diphenyl ether, nitrobenzene, benzonitrile, aromatic solvents such as pyridine,
Examples thereof include halogen solvents such as chloroform, dichloromethane, 1,2-dichloroethane, 1,1,2,2-tetrachloroethane, and ether solvents such as tetrahydrofuran, dioxane and diglyme. Especially
When an amide solvent such as N, N-dimethylacetamide or N-methyl-2-pyrrolidone is used, a high-polymer polyamic acid can be obtained.

【0015】上記のようにして得られたポリアミド酸
は、次いで脱水閉環され、ポリイミド樹脂とする。脱水
閉環する方法は公知の方法を用いることができ、例えば
トルエン、キシレン等の還流による熱環化法等を使用す
ることができる。このポリイミド樹脂は、脱水する際に
用いたトルエン、キシレン等を含んでいるため、水、メ
タノール等の貧溶剤へポリイミド樹脂溶液を投入、再沈
殿を行い、更にこれを乾燥しポリイミド樹脂の粉末とす
る。これを所望の有機溶媒へ溶解させ、本発明に使用す
る可溶性ポリイミド樹脂の溶液とする。
The polyamic acid obtained as described above is then dehydrated and ring-closed to obtain a polyimide resin. A known method can be used for the dehydration and ring closure method. For example, a thermal cyclization method by refluxing toluene, xylene, or the like can be used. Since this polyimide resin contains toluene, xylene and the like used for dehydration, water, a polyimide resin solution is poured into a poor solvent such as methanol, reprecipitated, and further dried to obtain a powder of the polyimide resin. I do. This is dissolved in a desired organic solvent to obtain a solution of a soluble polyimide resin used in the present invention.

【0016】この方法における本発明のポリイミド樹脂
の分子量は、ジアミン化合物との仕込量によって制限さ
れ、等モル量使用したときに高分子量のポリイミド樹脂
を製造することができる。
The molecular weight of the polyimide resin of the present invention in this method is limited by the amount charged with the diamine compound, and a high molecular weight polyimide resin can be produced when used in equimolar amounts.

【0017】また、本発明において、上述したポリイミ
ド樹脂(A)と組み合わせて使用される感光性ジアゾキ
ノン化合物(B)としては、o―ナフトキノンジアジド
スルホン酸エステル、o ―ナフトキノンジアジドスルホ
ンアミド等を例示することができるが、本発明において
は、特に下記一般式(2)
In the present invention, examples of the photosensitive diazoquinone compound (B) used in combination with the above-mentioned polyimide resin (A) include o-naphthoquinonediazidesulfonic acid ester and o-naphthoquinonediazidosulfonamide. In the present invention, the following general formula (2)

【0018】[0018]

【化2】 (但し、式中Yは芳香環を含む一価の有機基を示す)で
表される o−ナフトキノンジアジドスルホン酸エステル
が好適である。
Embedded image (Wherein, Y represents a monovalent organic group containing an aromatic ring), and o-naphthoquinonediazidosulfonic acid ester represented by the following formula is preferable.

【0019】上記一般式(2)で表される o―ナフトキ
ノンジアジドスルホン酸エステルの具体例としては、こ
れに限定されるものではないが、以下の(化3)から
(化11)に対応する一般式(3)〜(11)
Specific examples of the o-naphthoquinonediazidosulfonic acid ester represented by the general formula (2) are not limited thereto, but correspond to the following (Chemical Formula 3) to (Chemical Formula 11). General formulas (3) to (11)

【0020】[0020]

【化3】 Embedded image

【0021】[0021]

【化4】 Embedded image

【0022】[0022]

【化5】 Embedded image

【0023】[0023]

【化6】 Embedded image

【0024】[0024]

【化7】 Embedded image

【0025】[0025]

【化8】 Embedded image

【0026】[0026]

【化9】 Embedded image

【0027】[0027]

【化10】 Embedded image

【0028】[0028]

【化11】 (但し、化8〜11の式中Zは、一般式(化12)を示
す)
Embedded image (However, Z in the formulas 8 to 11 represents a general formula (Formula 12))

【0029】[0029]

【化12】 のものを例示することができ、これらは単独あるいは2
種以上の組合せで使用することができる。
Embedded image Can be exemplified, these can be used alone or 2
It can be used in combinations of more than one species.

【0030】本発明の感光性樹脂組成物は、前述した一
般式(1)に示されるポリイミド樹脂(A)と感光性ジ
アゾキノン化合物(B)とを混合することによって得ら
れる。両者の配合比率は任意であるが、良好な感光性と
保存安定性を得るためには、ポリイミド樹脂(A)10
0重量部に対して、感光性ジアゾキノン化合物を2〜1
00重量部、特に5〜50重量部の量で使用することが
好適である。
The photosensitive resin composition of the present invention can be obtained by mixing the above-mentioned polyimide resin (A) represented by the general formula (1) with the photosensitive diazoquinone compound (B). The mixing ratio of the two is optional, but in order to obtain good photosensitivity and storage stability, the polyimide resin (A) 10
The photosensitive diazoquinone compound is used in an amount of 2-1 to 0 parts by weight.
It is preferred to use it in an amount of 00 parts by weight, especially 5 to 50 parts by weight.

【0031】本発明の感光性樹脂組成物は、一般的には
適当な有機溶剤に溶解した形で使用され、基材に塗布さ
れる。ここで用いられる溶剤としては、 N−メチル−2
−ピロリドン、N, N−ジメチルアセトアミド、γ−ブチ
ロラクトン、ジメチルスルホキシド、ジエチレングリコ
ールジメチルエーテル、ジエチレングリコールジエチル
エーテル、ジエチレングリコールジブチルエーテル、ジ
エチレングリコールモノメチルエーテル、プロピレング
リコールモノメチルエーテルアセテート等を単独でも混
合して用いてもよい。
The photosensitive resin composition of the present invention is generally used in a form dissolved in an appropriate organic solvent, and is applied to a substrate. The solvent used here is N-methyl-2
-Pyrrolidone, N, N-dimethylacetamide, γ-butyrolactone, dimethylsulfoxide, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, diethylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, and the like may be used alone or in combination.

【0032】本発明の感光性樹脂組成物の使用方法は、
まず該組成物を適当な支持体、例えばシリコンウエハー
やセラミック、アルミ基板等に塗布する。塗布方法は、
スピンナーを用いた回転塗布、スプレーコーターを用い
た噴霧塗布、浸漬、印刷、ロールコーティング等を行
う。次に、60〜120℃でプリベークをして塗膜を乾燥
後、所望のパターン形状に化学線を照射する。化学線と
しては、X線、電子線、紫外線、可視光線等が使用でき
るが、200〜500nmの波長のものが好ましい。次に照射部
を現像液で溶解除去することによりレリーフパターンを
得る。
The method of using the photosensitive resin composition of the present invention is as follows.
First, the composition is applied to a suitable support, for example, a silicon wafer, ceramic, or aluminum substrate. The application method is
Spin coating using a spinner, spray coating using a spray coater, dipping, printing, roll coating, and the like are performed. Next, after pre-baking at 60 to 120 ° C. to dry the coating film, a desired pattern shape is irradiated with actinic radiation. As the actinic radiation, X-rays, electron beams, ultraviolet rays, visible rays and the like can be used, but those having a wavelength of 200 to 500 nm are preferable. Next, a relief pattern is obtained by dissolving and removing the irradiated portion with a developer.

【0033】現像液としては、水酸化ナトリウム、水酸
化カリウム、炭酸ナトリウム、ケイ酸ナトリウム、メタ
ケイ酸ナトリウム、アンモニア水等の無機アルカリ類、
エチルアミン、n-プロピルアミン等の第一アミン類、ジ
エチルアミン、ジ -n-プロピルアミン等の第二アミン
類、トリエチルアミン、メチルジエチルアミン等の第三
アミン類、ジメチルエタノールアミン、トリエタノール
アミン等のアルコールアミン類、テトラメチルアンモニ
ウムヒドロキシド、テトラエチルアンモニウムヒドロキ
シド等の第四級アンモニウム塩等のアルカリ類の水溶
液、及びこれにメタノール、エタノールのごときアルコ
ール類等の水溶性有機溶媒や界面活性剤を適当量添加し
た水溶液を好適に使用することができる。現像方法とし
ては、スプレー、パドル、侵漬、超音波等の方式が可能
である。次に現像によって形成したレリーフパターンを
リンスする。リンス液としては蒸留水を使用する。
Examples of the developer include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and aqueous ammonia;
Primary amines such as ethylamine and n-propylamine; secondary amines such as diethylamine and di-n-propylamine; tertiary amines such as triethylamine and methyldiethylamine; alcohol amines such as dimethylethanolamine and triethanolamine , An aqueous solution of alkalis such as quaternary ammonium salts such as tetramethylammonium hydroxide and tetraethylammonium hydroxide, and an appropriate amount of a water-soluble organic solvent or a surfactant such as alcohols such as methanol and ethanol. The used aqueous solution can be suitably used. As a developing method, a method such as spray, paddle, immersion, or ultrasonic wave can be used. Next, the relief pattern formed by development is rinsed. Distilled water is used as the rinsing liquid.

【0034】次に加熱処理を行い、耐熱性に富む最終パ
ターンを得る。
Next, a heat treatment is performed to obtain a final pattern having high heat resistance.

【0035】本発明による感光性樹脂組成物は、容易に
パターン形成ができ、また加熱処理後に形成される樹脂
皮膜は、耐熱性、機械特性、電気特性に優れるために、
I.C.やL.S.I.等の半導体素子表面のジャンクションコー
ト膜、パッシベーション膜、バッファーコート膜、L.S.
I.等のα線遮断膜、多層回路の層間絶縁膜、フレキシブ
ル銅張板のカバーコート、ソルダーレジスト膜及び液晶
配向膜等に好適に用いることができる。
The photosensitive resin composition according to the present invention can easily form a pattern, and the resin film formed after the heat treatment has excellent heat resistance, mechanical properties, and electrical properties.
Junction coat film, passivation film, buffer coat film, LS on the surface of semiconductor elements such as IC and LSI
It can be suitably used for an α-ray blocking film such as I., an interlayer insulating film of a multilayer circuit, a cover coat of a flexible copper clad board, a solder resist film, a liquid crystal alignment film and the like.

【0036】[0036]

【実施例】以下、本発明を実施例によりさらに詳細に説
明する。 <実施例1> 〔ポリイミド(A)の合成〕4,4'−ジアミノー4"ーヒド
ロキシトリフェニルアミン0.595g(0.020m
ol)を10mlの N−メチルー2―ピロリドンに溶解
し、これに0.601g(0.020mol)の 2,2
−ビス(3,4−ジカルボキシフェニル)−1, 1, 1, 3,
3, 3-ヘキサフルオロプロパン二無水物を固体のまま一
度に加えた。25℃で12時間攪拌を行った後、水とメ
タノールの混合溶液中に投入し、次いで濾過を行い、更
に50℃で12時間真空乾燥することによりポリアミッ
ク酸を得た。得られたポリアミック酸をキシレン中、8
時間加熱攪拌を行いイミド化を行った。この反応溶液を
大量の水とメタノールの混合溶液に投入してポリイミド
樹脂を再沈殿し、更にこれを180℃で12時間真空乾
燥を行い、ポリイミド樹脂粉末を得た。
The present invention will be described in more detail with reference to the following examples. <Example 1> [Synthesis of polyimide (A)] 0.595 g of 4,4'-diamino-4 "-hydroxytriphenylamine (0.020 m
ol) was dissolved in 10 ml of N-methyl-2-pyrrolidone, and 0.601 g (0.020 mol) of 2,2 was added thereto.
-Bis (3,4-dicarboxyphenyl) -1,1,1,3
3,3-Hexafluoropropane dianhydride was added all at once as a solid. After stirring at 25 ° C. for 12 hours, the mixture was poured into a mixed solution of water and methanol, then filtered, and further vacuum-dried at 50 ° C. for 12 hours to obtain a polyamic acid. The obtained polyamic acid was dissolved in xylene in 8
The mixture was heated and stirred for an hour to perform imidization. This reaction solution was poured into a large amount of a mixed solution of water and methanol to reprecipitate the polyimide resin, and further dried at 180 ° C. for 12 hours under vacuum to obtain a polyimide resin powder.

【0037】〔感光性樹脂組成物の作成〕合成したポリ
イミド15重量部、上記一般式(3)(化3)で表され
る感光性ジアゾキノン5重量部を N−メチル−2−ピロ
リドン80重量部に溶解し、0.2μmのテフロンフィ
ルターで濾過し、感光性ワニスを得た。
[Preparation of photosensitive resin composition] 15 parts by weight of the synthesized polyimide and 5 parts by weight of the photosensitive diazoquinone represented by the above general formula (3) (formula 3) were combined with 80 parts by weight of N-methyl-2-pyrrolidone. And filtered through a 0.2 μm Teflon filter to obtain a photosensitive varnish.

【0038】〔特性評価〕この感光性ワニスをスピンコ
ーターを用いて、シリコンウエハーに厚さ約5μmに塗
布して乾燥した後、フォトマスクを通して、超高圧水銀
灯にガラスフィルターをかけた436nmの波長の活性
光線を照射し、200mJ/cm2 の密着露光を行っ
た。次いで、2.5%水酸化テトラメチルアンモニウム
水溶液で現像を行い、更に純水でリンスを行い、得られ
たライン・アンド・スペースのパターン形状、及び得ら
れた最小の線幅を観測した。また、それらを200℃で
1時間加熱処理を行い、硬化前の膜厚に対する残膜率を
求めた。その結果を表1に示した。
[Evaluation of Characteristics] The photosensitive varnish was applied to a silicon wafer to a thickness of about 5 μm using a spin coater, dried, and then passed through a photomask through a glass filter with an ultra-high pressure mercury lamp to a wavelength of 436 nm. Irradiation with actinic light was performed to perform contact exposure of 200 mJ / cm 2 . Subsequently, development was carried out with a 2.5% aqueous solution of tetramethylammonium hydroxide, followed by rinsing with pure water, and the obtained line-and-space pattern shape and the obtained minimum line width were observed. Further, they were subjected to a heat treatment at 200 ° C. for 1 hour, and the residual film ratio to the film thickness before curing was determined. The results are shown in Table 1.

【0039】<実施例2>2,2−ビス(3, 4−ジカルボ
キシフェニル)−1, 1, 1, 3, 3, 3−ヘキサフルオロプ
ロパン二無水物の代わりに3, 4, 3', 4'−ベンゾフェノ
ンテトラカルボン酸二無水物を用いた以外は、実施例1
と同様にして合成、パターン形成を行い、特性評価を行
った。その結果を表1に示した。
Example 2 Instead of 2,2-bis (3,4-dicarboxyphenyl) -1,1,1,3,3,3-hexafluoropropane dianhydride, 3,4,3 ′ Example 1 except that 4,4'-benzophenonetetracarboxylic dianhydride was used.
Synthesis and pattern formation were performed in the same manner as described above, and the characteristics were evaluated. The results are shown in Table 1.

【0040】<実施例3>2,2−ビス(3,4−ジカルボ
キシフェニル)−1, 1, 1, 3, 3, 3-ヘキサフルオロプ
ロパン二無水物の代わりに3, 4, 3', 4'−ビフェニルテ
トラカルボン酸二無水物を用いた以外は、実施例1と同
様にして合成、パターン形成を行い、特性評価を行っ
た。その結果を表1に示した。
Example 3 Instead of 2,2-bis (3,4-dicarboxyphenyl) -1,1,1,3,3,3-hexafluoropropane dianhydride, 3,4,3 ′ Synthesis and pattern formation were carried out in the same manner as in Example 1 except that 4,4′-biphenyltetracarboxylic dianhydride was used, and the characteristics were evaluated. The results are shown in Table 1.

【0041】<実施例4>感光性ジアゾキノンを上記一
般式(3)(化3)の代わりに、上記一般式(6)(化
6)を用いた以外は、実施例1と同様にして合成、パタ
ーン形成を行い、特性評価を行った。その結果を表1に
示した。
Example 4 A photosensitive diazoquinone was synthesized in the same manner as in Example 1 except that the above-mentioned general formula (6) (chemical formula 6) was used instead of the general formula (3) (chemical formula 3). Then, a pattern was formed, and the characteristics were evaluated. The results are shown in Table 1.

【0042】<実施例5>感光性ジアゾキノンを上記一
般式(3)(化3)の代わりに、上記一般式(9)(化
9)を用いた以外は、実施例1と同様にして合成、パタ
ーン形成を行い、特性評価を行った。その結果を表1に
示した。
<Example 5> A photosensitive diazoquinone was synthesized in the same manner as in Example 1 except that the above-mentioned general formulas (9) and (9) were used instead of the general formulas (3) and (3). Then, a pattern was formed, and the characteristics were evaluated. The results are shown in Table 1.

【0043】[0043]

【表1】 [Table 1]

【0044】以上の結果より、本発明は、感光性、解像
性に優れたものであり、高温による加熱を必要としな
く、残膜性も優れた、また作業上安全なアルカリ水溶液
に現像が可能な感光性樹脂組成物を提供できることが判
明した。
From the above results, the present invention is excellent in photosensitivity and resolution, does not require heating at high temperature, has excellent residual film properties, and can be developed in an alkaline aqueous solution which is safe for operation. It has been found that a possible photosensitive resin composition can be provided.

【0045】[0045]

【発明の効果】本発明は以上の構成であるから、下記に
示す如き効果がある。即ち、少なくとも、上記一般式
(化1)で表される構成単位からなるポリイミド樹脂と
感光性ジアゾキノン化合物とを含有してなり、該感光性
ジアゾキノン化合物は、前記ポリイミド樹脂100重量
部当たり、2〜100重量部の量に配合されてなる感光
性樹脂組成物であって、前記感光性ジアゾキノン化合物
が、o―ナフトキノンジアジドスルホン酸誘導体であ
り、前記ポリイミド樹脂を構成する酸二無水物が、2,2
−ビス(3, 4 −ジカルボキシフェニル)−1, 1, 1, 3,
3,3−ヘキサフルオロプロパン二無水物であることを特
徴とする新規な感光性樹脂組成物としたので、従来のも
のでは達成できなかった感光性、解像性、残膜性に優
れ、かつ高温による加熱を必要としなく、また作業上の
安全面や環境面で優位なアルカリ水溶液による現像が可
能な感光性樹脂組成物が得られる。この感光性樹脂組成
物を加熱して得られるポリイミド皮膜は、電子部品用保
護膜として好適に使用することができるため、工業材料
としての価値が大きい。
As described above, the present invention has the following effects. That is, the photosensitive diazoquinone compound comprises at least a polyimide resin comprising a structural unit represented by the above general formula (Chemical Formula 1) and a photosensitive diazoquinone compound, and the photosensitive diazoquinone compound is used in an amount of 2 to 100 parts by weight of the polyimide resin. A photosensitive resin composition formulated in an amount of 100 parts by weight, wherein the photosensitive diazoquinone compound is an o-naphthoquinonediazidosulfonic acid derivative, and the acid dianhydride constituting the polyimide resin is 2,2. Two
-Bis (3,4-dicarboxyphenyl) -1,1,1,3
Because it is a novel photosensitive resin composition characterized by being 3,3-hexafluoropropane dianhydride, excellent photosensitivity, resolution, residual film properties that could not be achieved with the conventional one, and A photosensitive resin composition which does not require heating at a high temperature and which can be developed with an alkaline aqueous solution which is advantageous in terms of work safety and environment is obtained. The polyimide film obtained by heating the photosensitive resin composition can be suitably used as a protective film for electronic parts, and therefore has great value as an industrial material.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 FI H01L 21/312 H05K 3/46 T H05K 3/46 H01L 21/30 502R ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 6 Identification code FI H01L 21/312 H05K 3/46 T H05K 3/46 H01L 21/30 502R

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】少なくとも、下記一般式(1) 【化1】 (式中、Xは、4価の有機基を示す)で表される構成単
位からなるポリイミド樹脂(A)と、感光性ジアゾキノ
ン化合物(B)とを含有してなることを特徴とする感光
性樹脂組成物。
At least one of the following general formulas (1): (Wherein X represents a tetravalent organic group), comprising a polyimide resin (A) having a structural unit represented by the formula (A) and a photosensitive diazoquinone compound (B). Resin composition.
【請求項2】前記感光性ジアゾキノン化合物(B)は、
ポリイミド樹脂(A)100重量部当たり、2〜100
重量部の量に配合されてなることを特徴とする請求項1
記載の感光性樹脂組成物。
2. The photosensitive diazoquinone compound (B) is
2 to 100 per 100 parts by weight of the polyimide resin (A)
2. The composition according to claim 1, which is blended in an amount of part by weight.
The photosensitive resin composition as described in the above.
【請求項3】前記感光性ジアゾキノン化合物(B)が、
o―ナフトキノンジアジドスルホン酸誘導体であること
を特徴とする請求項1または2記載の感光性樹脂組成
物。
3. The method according to claim 1, wherein the photosensitive diazoquinone compound (B) is
3. The photosensitive resin composition according to claim 1, which is an o-naphthoquinonediazidosulfonic acid derivative.
【請求項4】前記ポリイミド樹脂(A)を構成する酸二
無水物が、2,2−ビス(3, 4 −ジカルボキシフェニ
ル)−1, 1, 1, 3, 3, 3−ヘキサフルオロプロパン二無
水物であることを特徴とする請求項1、2または3記載
の感光性樹脂組成物。
4. An acid dianhydride constituting said polyimide resin (A) is 2,2-bis (3,4-dicarboxyphenyl) -1,1,1,3,3,3-hexafluoropropane. 4. The photosensitive resin composition according to claim 1, which is a dianhydride.
JP24801797A 1997-09-12 1997-09-12 Photosensitive resin composition Expired - Fee Related JP3458669B2 (en)

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