JPH118173A - Substrate treatment device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable a substrate to be held and subjected to a thermal treatment, preventing it from being warped, by a method wherein supports are composed of three first supports provided inside a circle prescribed in diameter and one or more second supports provided outside the circle. SOLUTION: Three first supports 5a which support a substrate W1 of small diameter are arranged like a regular triangle inside the substrate W1 on the upside of a heating plate 1. One or more second supports 5b are arranged outside the substrate W1 of small diameter or arranged at positions so as to correct a substrate W2 of large diameter on warpage caused by its own weight. By this setup, substrates can be supported at a regular fine interval above a plate- like body independent of the size of substrates, so that the substrates can be uniformly subjected to a thermal treatment.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a substrate processing apparatus for heating or cooling a substrate.

[0002]

2. Description of the Related Art In a process of processing a substrate such as a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display, and a substrate for an optical disk, for example, a substrate heating apparatus for heating a substrate on which a resist film is formed to a predetermined temperature. A substrate cooling device that cools the heated substrate to a predetermined temperature is used.

FIG. 6 is a schematic diagram showing a configuration of a main part of a conventional substrate heating apparatus. In FIG. 6, the substrate heating device includes a heating plate 1 for heating the substrate W to a predetermined temperature. Heating means such as a heater is embedded inside the heating plate 1. A spacer 5 that supports the lower surface of the substrate W is disposed on the upper surface of the heating plate 1.

The spacer 5 is formed of a spherical body, and a substantially lower half is buried inside the heating plate 1. Three spacers 5 are arranged on the upper surface of the heating plate 1 in a regular triangular shape. The substrate W is supported by the three spacers 5 above the heating plate 1 with a small gap.

Below the heating plate 1, three lifting pins 3 and a lifting frame 6 connected to these pins are arranged. A cylinder 7 is connected to one end of the lifting frame 6. The elevating frame 6 moves up and down in response to the extension and retraction of the rod of the cylinder 7, and three elevating pins 3 move up and down through through holes formed in the heating plate 1.
Thereby, the substrate W is moved between the position where the substrate W is placed on the spacer 5 and the standby position above the heating plate 1.

When the substrate W is placed on the three spacers 5, the substrate W is heated by radiant heat from the upper surface of the heating plate 1. Thereby, the substrate W is set to a predetermined temperature. The rising state of the temperature of the substrate W and the temperature distribution in the plane of the substrate W are affected by the size of the gap between the substrate W and the heating plate 1. For this reason, the embedding amount of the spacer 5 into the heating plate 1 is adjusted so that the substrate W can be supported with a predetermined gap above the heating plate 1.

[0007]

At present, a generally used substrate (wafer) having an outer diameter of 200 mm or less has a size of 3 mm.
The deflection of the substrate W due to its own weight when supported by the spacers 5 was very small. For this reason, the minute gap between the substrate W and the heating plate 1 is kept substantially even in the plane of the substrate W, and the situation where the heat treatment of the substrate W becomes non-uniform does not occur.

However, in recent years, the diameter of substrates has been increasing with the aim of improving production efficiency, and the outer diameter has been reduced to 300 mm.
The use of substrates exceeding the limit is being realized. In the case of a large-diameter substrate, the plane area increases as compared with the thickness, and the rigidity of the entire substrate decreases. Therefore, when the large-diameter substrate W is supported by the three spacers 5 of the substrate heating device, the substrate bends due to its own weight, and the minute gap between the substrate W and the upper surface of the heating plate 1 becomes uneven. As a result, the influence of the radiant heat received from the heating plate 1 becomes non-uniform in the plane of the substrate W, and there is a possibility that the temperature processing of the substrate W varies.

It is an object of the present invention to provide a substrate processing apparatus for performing temperature processing on a substrate while supporting the substrate without causing the substrate to bend.

[0010]

Means for Solving the Problems and Effects of the Invention A substrate processing apparatus according to a first aspect of the present invention comprises a plurality of supports for supporting a substrate at a small interval above a plate-like body having a heating element or a cooling element. In a substrate processing apparatus in which a body is provided on an upper surface of a plate-like body, a plurality of supports are provided on at least three first supports provided on an inner side of a predetermined circle having a predetermined diameter; And at least one second support provided on the outer side of the predetermined circle.

In the substrate processing apparatus according to the first invention, at least three first supports provided on the inner side of the predetermined circle support a substrate having a relatively small diameter. The small-diameter substrate has a small deflection due to its own weight. Therefore, by providing at least three first supports, the substrate can be stably supported without bending. Thereby, a small-diameter substrate can be supported above the plate-like body at a constant minute interval. At least one second support provided on the outer side of the predetermined circle supports the outer peripheral side of the substrate having a relatively large diameter. A large-diameter substrate tends to be bent by its own weight. For this reason, the first substrate provided on the center side of the substrate
If the substrate is supported only by the support, the outer periphery of the large-diameter substrate is bent. Therefore, the bending of the large-diameter substrate on the outer peripheral side is corrected by the second support. Thereby, a large-diameter substrate can be supported above the plate-like body with uniform minute intervals.

As described above, by providing the first support and the second support, regardless of the diameter of the substrate,
The substrate can be supported above the plate-like body while maintaining a uniform and minute interval, whereby uniform temperature adjustment processing can be performed on the substrate.

A substrate processing apparatus according to a second aspect of the present invention is the substrate processing apparatus according to the first aspect, wherein the first support is disposed on a first circumference and the second support is disposed on the first circumference. It is arranged on a second circumference concentric with the first circumference.

Thus, the first support arranged on the first circumference supports the substrate having a small diameter, and the first support and the second circumference concentric with the first circumference. The second placed on
A large-diameter substrate is supported by the support.

A substrate processing apparatus according to a third aspect of the present invention is the substrate processing apparatus according to the second aspect of the invention, wherein the first support and the second support are arranged at the center of the first and second circumferences. Are arranged at different angular positions.

In this case, the lower surface of the large-diameter substrate is supported by the first support and the second support disposed at different angular positions. For this reason, the large-diameter substrate is uniformly supported by the first and second supports, and is supported above the plate-like body at uniform minute intervals.

According to a fourth aspect of the present invention, there is provided a substrate processing apparatus comprising:
In the configuration of the substrate processing apparatus according to any one of the third inventions, the diameter of the predetermined circle is approximately 200 mm. Thus, a substrate having a small diameter of about 200 mm or less, which is slightly bent by its own weight, is stably supported by the first support. A substrate having a large deflection due to its own weight and having a diameter exceeding 200 mm is supported by the first support and the second support.

According to a fifth aspect of the present invention, in the substrate processing apparatus, a plurality of supports for supporting the substrate at a minute interval are provided above the plate having the heating element or the cooling element on the upper surface of the plate. In the substrate processing apparatus, the plurality of supports include at least four supports.

As a result, a large-diameter substrate whose deflection due to its own weight is large is supported by at least four supports. The support is disposed at a position where the substrate has a large deflection, and corrects the deflection of the substrate. As a result, the large-diameter substrate is supported above the plate-like body with a uniform minute interval, and uniform temperature adjustment processing is performed.

[0020]

FIG. 1 is a sectional view of a substrate heating apparatus according to an embodiment of the present invention, and FIG. 2 is a partially enlarged sectional view of a heating plate of the substrate heating apparatus.

The substrate heating device includes a substrate W inside the housing 10.
And a heating plate 1 for heating the heating plate. The heating plate 1 includes a heat radiating plate 1a and a heat transfer member 1b. A heating element such as a heater 16 is embedded in the heat transfer member 1b. A plurality of spacer receiving holes 15 are formed on the upper surface of the heat sink 1a. Inside the spacer receiving hole 15, a spacer 5 made of a spherical body of a non-heat transfer material such as alumina or mateatite is inserted. Spacer receiving hole 15
Is set so that the spacer 5 can protrude from the upper surface of the heat sink 1a by a predetermined height. Thus, when the substrate W is placed on the spacer 5, the substrate W is held with a minute gap d from the upper surface of the heat sink 1a.

The heating plate 1 has three through holes 4 for passing three lifting pins 3 for moving the substrate W up and down.
Are formed. Above the heating plate 1, an upper cover 2 that covers the upper surface of the heating plate 1 is attached inside the upper surface of the housing 10.

Further, below the heating plate 1, there are arranged three lifting pins 3 which move up and down while supporting the lower surface of the substrate W, and a lifting plate 6 connected thereto.
A cylinder 7 is connected to one end of the lifting plate 6 outside the housing 10. Then, the elevating plate 6 and the elevating pins 3 move up and down by the expansion and contraction of the rod of the cylinder 7. When the elevating plate 6 and the elevating pins 3 are raised, the substrate W is held at the standby position above the heating plate 1, and when it is lowered, the substrate W is supported on the spacers 5 on the heating plate 1.

Here, the heating plate 1 in this embodiment is
Correspond to the plate-like body of the present invention, and the spacer 5 corresponds to the support.

FIG. 3 is a plan view of the heating plate. FIG.
A substrate heating apparatus provided with a heating plate having an outer diameter of 200 mm
mm or less and a larger diameter than this, for example, an outer diameter of 3 mm.
Both processing of the substrate W2 of 00 mm is possible. The small-diameter substrate W1 is unlikely to be bent by its own weight. In addition, the large-diameter substrate W2 is likely to be bent by its own weight. For this reason, four or more spacers are arranged to hold the substrates W1 and W2 horizontally without causing any bending.

In the arrangements according to the first to third examples shown in FIGS. 3A to 3C, three first spacers (first support members) 5a are arranged for a small-diameter substrate W1. Have been.
In the first and second examples, the three first spacers 5a are arranged in an equilateral triangle at an inner position of the substrate W1. In the third example, three first spacers 5a are arranged in an isosceles triangle shape. Since the small-diameter substrate W1 is slightly bent by its own weight, it can be stably supported by the three first spacers 5a without bending.

At least one second spacer (second support) 5b is disposed on the outer side of the small-diameter substrate W1. The second spacer 5b is arranged at a position where the deflection of the large-diameter substrate W2 due to its own weight can be corrected. Here, the state of deflection of the large-diameter substrate W2 due to its own weight will be described. FIG. 5 is a diagram illustrating the amount of deflection of a substrate having an outer diameter of 300 mm. The amount of deflection shown in FIG. 5 is the amount of deflection (vertically downward) at the center position P0 and the outer edge positions P1, P2 of the substrate W3 when the lower surface of the substrate W2 is supported by three first spacers 5a arranged in an equilateral triangle. Is obtained by calculation.

As is apparent from FIG. 5, as the radius R of the circumference where the three first spacers 5a are arranged becomes smaller, the displacement amounts of the outer peripheral edge positions P1 and P2 of the substrate W2 become larger, and the circle becomes larger. As the circumferential radius R increases, the substrate W2
It can be seen that the amount of displacement of the center position P0 of FIG. As described above, by appropriately changing the support position of the first spacer 5a and calculating the amount of displacement at each position of the substrate W2, it is possible to grasp the state of bending of the substrate W2 due to its own weight. Then, the arrangement positions of the first and second spacers 5a and 5b can be determined based on the result.

For example, in the first example of FIG. 3A, three second spacers 5b are arranged in a regular triangular shape and arranged at positions 180 degrees out of phase with the three first spacers 5a. I have. In the second example of FIG. 3B, four second spacers 5b are arranged at equal positions. Further, FIG.
In the third example of (c), two second spacers 5b are arranged.

The first to third examples are merely examples, and three or more first spacers 5a for supporting the small-diameter substrate W1 are arranged on the inner peripheral side of the substrate W1. Other arrangements may be used as long as one or more second spacers 5b can be arranged on the outer side to correct the deflection of the large-diameter substrate W2.

FIG. 4 is a plan view of a heating plate for a large-diameter substrate. The substrate heating apparatus provided with the heating plate of FIG. 4 can perform a heating process on a large-diameter substrate W2, for example, a substrate having an outer diameter of 300 mm or more. As described above, the large-diameter substrate W2 is largely bent by its own weight. Therefore, the lower surface of the substrate W2 is supported by at least four spacers 5c to correct the deflection due to its own weight. For example, as shown in FIG. 4, three third spacers (supports) 5c are arranged in an equilateral triangle near the outer periphery of the substrate W2, and one third spacer 5c is arranged at the center. . This allows
Deflection near the outer periphery and at the center of the substrate W2 can be suppressed, and the lower surface of the substrate W2 can be supported horizontally.

In the above embodiment, the substrate heating apparatus has been described as an example, but the first to third spacers 5a to 5c are described.
Can be applied to a substrate cooling device provided with a Peltier element or the like as a cooling element.

Further, the shape and installation form of the spacers 5, 5a to 5c are not limited to those shown in FIG. 2, and other shapes of spacers and their holding structures may be applied.

[Brief description of the drawings]

FIG. 1 is a sectional view of a substrate heating apparatus according to an embodiment of the present invention.

FIG. 2 is a partially enlarged sectional view of a heating plate.

FIG. 3 is a plan view of a heating plate.

FIG. 4 is a plan view of a heating plate for a large-diameter substrate.

FIG. 5 is a diagram illustrating a state of bending of a substrate due to its own weight.

FIG. 6 is a sectional view of a conventional substrate heating apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Heating plate 1a Heat sink 1b Heat transfer member 5 Spacer 5a First spacer 5b Second spacer 5c Third spacer

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Minoru Matsunaga 322 Hashinashi Furukawa-cho, Fushimi-ku, Kyoto, Japan Dainichi Screen Manufacturing Co., Ltd. (72) Inventor Hiroshi Kobayashi 322 Hazuka, Furukawa-cho, Fushimi-ku, Kyoto-shi No. Dainichi Screen Manufacturing Co., Ltd. Rakusai Office

Claims (5)

[Claims] 1. A substrate processing apparatus comprising: a plurality of supports provided on a top surface of a plate-like body provided with a heating element or a cooling element and supporting a substrate at a small interval above the plate-like body; The plurality of supports are at least three first supports provided on an inner side of a predetermined circle having a predetermined diameter, and at least one first support provided on an outer side of the predetermined circle. 2
A substrate processing apparatus comprising: a support; 2. The first support is arranged on a first circumference, and the second support is a second support concentric with the first circumference.
2. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is arranged on a circumference of the substrate. 3. The substrate according to claim 2, wherein the first support and the second support are arranged at different angular positions with respect to the centers of the first and second circumferences. Processing equipment. 4. The substrate processing apparatus according to claim 1, wherein the diameter of the predetermined circle is approximately 200 mm. 5. A substrate processing apparatus in which a plurality of supports for supporting a substrate at a minute interval above a plate having a heating element or a cooling element are provided on an upper surface of the plate. A substrate processing apparatus, wherein the plurality of supports include at least four supports.