JPH118073A - Organic el display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To attain high precision easily in an organic EL device whose facing electrode side is taken as a light taking-out surface. SOLUTION: This organic EL display device 13 which is provided with a plurality of lower electrode stripes 2, a material layer 4 for organic luminescent part, and a plurality of facing electrode stripes 12, and each of the facing electrode stripes is formed at least by a transparent facing electrode 5 formed at crossing parts with the lower electrode stripes when viewed from the above, and an auxiliary wiring 11a formed on the surface of the transparent facing electrodes so as to cross with each of the lower electric stripes when viewed from the above. At this time, the line width of the auxiliary wiring is formed so as to be smaller than the line width of the transparent facing electrode which is formed to be a bedding of the auxiliary wiring, and the luminescent efficiency of an organic EL element 6 formed at a crossing part with the transparent facing electrode and the lower electrode stripe when viewed from the above may be formed to be 11 m/W or higher.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic EL display device using an organic electroluminescence element (hereinafter, abbreviated as "organic EL element") as a pixel, and more particularly, to light extraction from a counter electrode side. The present invention relates to an organic EL display device having an organic EL element as a surface.

[0002]

2. Description of the Related Art An organic EL device is a light emitting device having a basic layer structure in which an anode, an organic light emitting portion, and a cathode are sequentially laminated on a substrate in this order or in the reverse order.
In the organic EL device, by applying a voltage between the anode and the cathode, light of a predetermined color according to the type of the organic light emitting material used in the organic light emitting portion is obtained. The organic E
The L element can emit light at a significantly lower applied voltage than the inorganic EL element, and when the organic EL element is used as a pixel, display with low viewing angle dependence can be performed. For this reason, organic EL display devices are currently being actively developed.

In order to obtain an organic EL display device, first, it is necessary to form a predetermined number of pixels, that is, an organic EL element on a base material. The heat resistance is relatively low, and its luminous ability disappears relatively easily by heating. For this reason, the counter electrode of the organic EL element (which means an electrode formed on the organic light-emitting portion after the formation of the organic light-emitting portion; the same applies hereinafter) is used when the counter electrode is formed or a conductive film to be a material thereof is formed. During the formation, so that the light emitting ability of the organic light emitting material does not decrease or disappear,
It is desired to form at a temperature as low as possible (approximately 150 ° C. or lower). For example, "Appl. Phys. Lett. Vol. 68" (1
996), p. 2606, describes a method in which an ITO film serving as a counter electrode is formed at room temperature to obtain an organic EL display device having an organic EL element having a light extraction surface on the counter electrode side.

[0004]

SUMMARY OF THE INVENTION An organic EL having a pixel composed of an organic EL element having a light extraction surface on a counter electrode side.
When a display device is to be obtained, the counter electrode needs to be formed of a transparent conductive film, and an oxide transparent conductive film is used as the transparent conductive film from the viewpoint of light transmittance and conductivity. Although it is desirable to use it, when an oxide transparent conductive film conventionally used as a counter electrode material for an organic EL element is formed under a temperature condition of about 150 ° C. or less, the resistivity is usually 1 × 10 ^{−. 3} Ω · cm or more.

For this reason, a band-shaped counter electrode common to a predetermined number of organic EL elements (hereinafter, this counter electrode is referred to as “counter electrode stripe”), such as an XY matrix type organic EL display device, is used. In a required number of organic EL display devices, the following problems occur when the opposing electrode stripes are formed by using a transparent conductive oxide film conventionally used as the opposing electrode material for the organic EL element.

That is, in the case of an organic EL display device having a light extraction surface on the counter electrode side, the sheet resistance of the counter electrode stripe is practically set to about 20 Ω / □ or less from the viewpoint of response speed and power consumption. It is desired that the opposing electrode stripes be formed by a transparent conductive oxide film having a high resistivity as described above, and the opposing electrode stripes be thinned in order to obtain a high-definition display device. The sheet resistance of the electrode stripe is easily 20Ω /
Exceeds □. As a result, the response speed is reduced, the power consumption is increased, and the like, and it is substantially impossible to obtain a practically usable organic EL display device.

The conductivity of a counter electrode stripe using an oxide transparent conductive film is disclosed in, for example, Japanese Patent Application Laid-Open No. 4-229595, a transparent electrode conductor for a counter electrode stripe (transparent oxide conductive film). It can be improved by providing a strip (auxiliary wiring) having higher conductivity than the oxide transparent conductive film. However, the invention disclosed in the above publication relates to an inorganic EL display device, and the following problem occurs when the method of the invention is applied to an organic EL display device as it is.

That is, in the invention disclosed in the above publication, the auxiliary wiring is formed by a lithography method utilizing wet etching, but the organic light emitting material used for the organic light emitting portion of the organic EL element is a lithography method. The conductive film is patterned by contact with an organic solvent which has been conventionally used, in other words, a solvent in a coating solution used as a material for a resist film, a developing solution used for forming a resist pattern, and wet etching. In this case, the resist is relatively easily dissolved by contact with an etching solution used for the wet etching or a stripping solution used for stripping the resist pattern. Further, the counter electrode constituting the organic EL element is easily peeled off by contact with the organic solvent. As a result, the luminous ability of the organic EL element is easily lost. When forming the auxiliary wiring by lithography using wet etching, it is extremely difficult to prevent the above-mentioned solvent, developer, etching solution or stripping solution from entering the organic light emitting portion.

For this reason, when the method of the invention disclosed in the above-mentioned publication is applied to an organic EL display device as it is, the luminous efficiency of the organic EL element is significantly reduced, and the organic EL display device which can be put to practical use is reduced. At present, it is practically impossible to obtain them, and the effect of this method on organic EL elements has not been clarified at all.

An object of the present invention is to provide an organic EL device which can easily obtain a high-definition display device having a light extraction surface on the counter electrode side.
A display device is provided.

[0011]

According to the present invention, there is provided an organic EL display device, comprising: a base material; a plurality of lower electrode stripes formed on the base material; And a plurality of opposing electrode stripes formed so as to intersect each of the lower electrode stripes via the organic light emitting unit material layer formed on the organic light emitting unit material layer. Each of the counter electrode stripes is provided at least on a transparent counter electrode formed at each intersection in plan view with the lower electrode stripe, and provided on a surface of the transparent counter electrode.
Further, each of the lower electrode stripes includes an auxiliary wiring formed so as to intersect in plan view, and the resistance value of the auxiliary wiring is the transparent counter electrode serving as a base of the auxiliary wiring. And the line width of the auxiliary wiring is smaller than the line width of the transparent counter electrode underlying the auxiliary wiring, and the line width of the transparent counter electrode and the lower electrode stripe in plan view is smaller than that of the auxiliary wiring. The upper intersection functions as a pixel formed of an organic EL element, and the luminous efficiency of the organic EL element is 1 lm / W or more.

[0012]

Embodiments of the present invention will be described below in detail. As described above, the organic EL display device of the present invention includes a base, a plurality of lower electrode stripes formed on the base, and an organic light emitting unit formed on each of the lower electrode stripes. And a plurality of opposing electrode stripes formed so as to intersect each of the lower electrode stripes with the organic light emitting section material layer interposed therebetween.

Here, the organic EL display device of the present invention basically uses the counter electrode side as a light extraction surface.
The above substrate side can be used as a light extraction surface. Therefore, what kind of material is used as the base material can be appropriately selected depending on whether or not the counter electrode side is the light extraction surface in the target organic EL display device. When the opposing electrode side is a light extraction surface in a target organic EL display device, the above-mentioned base material that gives high transparency (approximately 80% or more) to light emission (EL light) from an organic EL element (Hereinafter, this may be referred to as “translucent substrate”) or a non-translucent substrate may be used, but it is more preferable to use a non-translucent substrate. On the other hand, when the substrate side is used as the light extraction surface, it is preferable to use a light-transmitting substrate.

Specific examples of the transparent substrate include those made of transparent glass such as alkali glass and non-alkali gas,
Examples thereof include those made of transparent resin such as polyimide and polysulfone, those made of transparent ceramics such as translucent alumina and ZnS sintered body, those made of quartz, and the like. On the other hand, when a non-translucent substrate is used, the non-translucent substrate may be made of an organic material or an inorganic material.

The substrate may be any of a film, a sheet, and a plate, and may have any of a single-layer structure and a multi-layer structure. Furthermore,
As long as a desired lower electrode stripe can be formed, it may be made of any of an electrically insulating material, a semiconductor material, and a conductive material. What kind of base material is used can be appropriately selected in consideration of the intended use of the organic EL display device, productivity, and the like.

A plurality of lower electrode stripes are formed on the substrate. The shape of each of the lower electrode stripes in plan view can be appropriately selected according to the arrangement specification of the pixels (organic EL elements) in the target organic EL display device. For example, when the arrangement pattern of pixels is a mosaic type, a stripe type, or a four-pixel arrangement type, it can be linear.

The size of each of the lower electrode stripes and the pitch between the lower electrode stripes are appropriately selected according to the degree of refinement in the target organic EL display device. For example, in order to obtain a high-definition XY matrix type organic EL display device (meaning that the number of pixels is approximately 400 pixels / cm ² or more; the same applies hereinafter), individual lower electrode stripes are required. The width in the lateral direction is generally 5 to 500 μm in the shape of a stripe in a plan view,
The pitch between these lower electrode stripes is approximately 5 to 5
It is preferably set to 00 μm.

The material of the lower electrode stripe may be basically any material as long as it can be in close contact with the base material and can be finely processed. In the target organic EL display device, the base material side is a light extraction surface. And whether the lower electrode stripe is used as a cathode or as an anode.

That is, in the case where the above-mentioned substrate side is used as the light extraction surface in the intended organic EL display device,
A material capable of forming a light-transmitting lower electrode stripe is selected so that light (EL light) generated in the organic light-emitting portion is transmitted. On the other hand, in a target organic EL display device, in a case where the above-mentioned base material side is not used as a light extraction surface and the later-described counter electrode stripe side is used as a light extraction surface, the lower electrode stripe is formed of EL light generated in the organic light emitting portion. The material may be selected depending on whether the lower electrode stripe is used as a cathode or an anode since the lower electrode stripe may or may not have a light-transmitting property.

When the lower electrode stripe is used as a cathode, it is preferable to use a metal, an alloy, an electrically conductive compound or a mixture thereof having a small work function (for example, 4 eV or less) as a material of the lower electrode stripe. Specific examples include sodium, sodium-potassium alloys, magnesium, lithium, alloys or mixed metals of magnesium and silver, magnesium-copper mixtures,
_{Aluminum, Al / Al 2 O 3,} Al-Li alloys, rare earth metals such as indium and ytterbium, and the like. On the other hand, when the lower electrode stripe is used as an anode, a metal, an alloy, an electrically conductive compound or a mixture thereof having a large work function (for example, 4 eV or more, preferably 5 eV or more) is used as a material of the lower electrode stripe. Specific examples thereof include metals such as Au, CuI, ITO, tin oxide, zinc oxide, and In.
And a conductive transparent material such as a Zn-O-based oxide.
The lower electrode stripe does not have to have a single-layer structure, but may have a multi-layer structure of two or more layers.

In the organic EL display device of the present invention, a material layer for an organic light emitting portion is formed on each of the lower electrode stripes described above. Here, specific examples of the layer configuration of the organic EL element are as follows (1) to (4): (1) anode / light emitting layer / cathode (2) anode / hole injection layer / light emitting layer / cathode (3) Anode / light-emitting layer / electron injection layer / cathode (4) Anode / hole injection layer / light-emitting layer / electron injection layer / cathode In this case, the material layer for the light emitting layer corresponds to the material layer for the organic light emitting portion in the present invention, and when the organic EL device of the type (2) is to be formed, the material layer for the hole injection layer is required. The laminate of the material layer and the material layer for the light emitting layer corresponds to the material layer for the organic light emitting portion in the present invention, and when an organic EL device of the type (3) is to be formed, the material for the light emitting layer is used. The laminate of the material layer and the material layer for the electron injection layer corresponds to the material layer for the organic light emitting portion according to the present invention, and the above (4) When an organic EL device of the type described above is to be formed, a laminate of a material layer for a hole injection layer, a material layer for a light emitting layer, and a material layer for an electron injection layer is referred to in the present invention for an organic light emitting portion. It corresponds to a material layer.

The material layer for the light emitting layer is usually formed of one or more kinds of organic light emitting materials. A mixture of the organic light emitting material and the electron injection material and / or the hole injection material, or the mixture or the organic or organic material is used. It may be formed of a polymer material or the like in which a light emitting material is dispersed. Also, an organic EL device using a hole transport layer instead of the hole injection layer, or an organic EL device using a hole transport layer together with the hole injection layer
Although there are devices, a “hole injection layer” as used herein means a single layer of a hole injection layer, a single layer of a hole transport layer, and a hole injection layer and a hole transport layer, unless otherwise specified. Is a generic name for the laminate.

The layer structure of the material layer for the organic light emitting portion in the present invention is such that a desired light emission (EL light) can be obtained by applying a voltage between the above-mentioned lower electrode stripe and a later-described counter electrode stripe. If it is, it is not particularly limited and can be appropriately selected. The material of the layers constituting the organic light emitting section material layer is not particularly limited, and various materials may be used as long as an organic EL element that emits light of a desired color (EL light) can be obtained. can do.

Since the material layer for the organic light emitting portion constitutes an organic EL element together with the above-described lower electrode stripe and a later-described counter electrode stripe, at least a portion where the organic EL element is to be formed is formed on the lower electrode stripe. Is formed. Of course, it may be formed not only on the lower electrode stripe at that location, but also on the periphery thereof. If the organic light emitting portion material layer is provided so as to cover the outer surface (including the surface of the lower electrode stripe) of the substrate on which the lower electrode stripe is formed, the formation is facilitated.

On the outer surface (including the surface of the organic light emitting portion material layer) of the substrate on which the organic light emitting portion material layer is provided, the above-mentioned organic light emitting portion material layer is interposed. A plurality of opposing electrode stripes are formed so as to intersect with each of the lower electrode stripes. Each of the opposing electrode stripes is provided on at least a transparent opposing electrode formed at each intersection in plan view with the lower electrode stripe, and provided on the surface of the transparent opposing electrode. And auxiliary wirings formed so as to cross each of the lower electrode stripes as viewed in plan.

The transparent counter electrode constituting one counter electrode stripe may be an electrode individually formed at each intersection of the counter electrode stripe and the lower electrode stripe in plan view, One electrode may be formed so as to be common to all of the intersections in the plan view.

In the case where a transparent counter electrode is individually formed at each intersection of the counter electrode stripe and the lower electrode stripe in plan view, the transparent counter electrode may have a rectangular, circular or elliptical shape in plan view. And so on. On the other hand, when the transparent counter electrode is formed so as to be common to all the intersections of the counter electrode stripe and the lower electrode stripe in plan view, the shape of the transparent counter electrode in plan view should be linear. Can be. The arrangement specifications and the shape in plan view of the transparent counter electrode can be appropriately selected according to the intended use and intended use of the organic EL display device.

The material of the transparent counter electrode is appropriately selected according to whether the transparent counter electrode is used as an anode or a cathode. In any case, the light (EL light) emitted from the organic light emitting portion is used. It is preferable that the material is selected so that the transmittance of the item (1) is approximately 50%. The transmittance is more preferably approximately 60% or more, and approximately 80% or more.
% Is particularly preferable.

When the transparent counter electrode is used as an anode, a film having a film thickness of 10 nm made of a transparent conductive oxide such as an In-Zn-O-based oxide, ITO, ZnO: Al and a Zn-Sn-O-based oxide is used. Oxide transparent conductive film of about 500 nm,
Metals having a work function of 5 eV or more (eg, Au, Pt, Pd
Etc.), the transparent counter electrode can be formed by an ultrathin film having a thickness of about 1 to 20 nm. Above all,
Even when the film is formed at a substrate temperature of room temperature, the resistivity is 5 × 1.
From the viewpoint that a transparent conductive film of 0 ⁻⁴ Ω · cm or less can be easily obtained, an amorphous transparent conductive film having a low resistivity, preferably an In—Zn—O-based amorphous oxide film, is used for an anode. Is preferably formed. The aspect in which the transparent counter electrode is formed by the amorphous transparent conductive film is a particularly preferred aspect of the present invention.

On the other hand, when the transparent counter electrode is used as a cathode, a film having an electron injecting property (hereinafter, this film is referred to as an “electron injecting film”) and an oxidation film formed on the electron injecting film are used. It is preferable that the transparent counter electrode is formed of a two-layer conductive film composed of a transparent conductive film. Specific examples of the material of the electron injecting film include Ca, Sr, and B.
a, Mg, a simple metal such as a rare earth metal, or a Li alloy (A
l: Li, In: Li, Pb: Li, Bi: Li, S
n: Li, Zn: Li, etc.), Mg alloy (Mg: Ag, M
g: In, Mg: Al, Mg: Li, etc.), Ba
Metal oxides such as O, SrO, MgO, Li ₂ O ₃ and Na ₂ O ₃ , and metal fluorides such as LiF and NaF are exemplified. The work function of the electron injecting film is 3.8.
A film thickness of 0.1 to 20 made of a metal or a compound of eV or less
Ultrathin films of nm are preferred. Further, as the oxide transparent conductive film formed on the electron injecting film, an oxide transparent conductive film having a film thickness of about 10 to 500 nm made of the transparent conductive oxide exemplified above as the material of the anode transparent counter electrode. Is preferred.

The auxiliary wiring which forms the counter electrode stripe together with the transparent counter electrode described above is provided to obtain a counter electrode stripe having higher conductivity than when the counter electrode stripe is formed only by the material of the transparent counter electrode. It is a thing. The auxiliary wiring is one with the auxiliary wiring.
The auxiliary wiring is provided on the surface of the transparent counter electrode constituting this counter electrode stripe, and the auxiliary wiring is formed so as to intersect each of the above-described lower electrode stripes in plan view.

When transparent opposing electrodes are individually formed at the respective intersections of the opposing electrode stripe and the lower electrode stripe in plan view, the above-mentioned auxiliary wiring is a part of one opposing electrode stripe. Is formed on each of the transparent counter electrodes and on the surface of the base material (including the surface of the material layer for the organic light emitting section) between the adjacent transparent counter electrodes so that the transparent counter electrodes can be electrically connected to each other. You. On the other hand, when the transparent counter electrode constituting the counter electrode stripe is a single electrode formed so as to be common to all of the intersections of the counter electrode stripe and the lower electrode stripe in plan view. The auxiliary wiring is formed on the transparent counter electrode so as to cross the surface of the transparent counter electrode and to cross each of the lower electrode stripes in plan view.

As described above, since the auxiliary wiring is provided to obtain a highly conductive counter electrode stripe, the resistance value of the auxiliary wiring is smaller than the resistance value of the transparent counter electrode underlying the auxiliary wiring. Is also low. In order to obtain a high-definition organic EL display device, the resistivity should be approximately 5 × 10 ⁻⁵ Ω · c.
It is preferable that the auxiliary wiring be formed using a material having a size of m or less. Further, the resistance value per cm of the auxiliary wiring is preferably 1 kΩ or less, more preferably 0.5 kΩ or less, and particularly preferably 0.1 kΩ or less.

Although the resistance value per 1 cm of the auxiliary wiring varies depending on the line width and thickness of the auxiliary wiring in addition to the material of the auxiliary wiring, the organic EL display device of the present invention basically has the opposite electrode stripe side. It is a light extraction surface.
Therefore, even when the counter electrode stripe side is used as a light extraction surface, the line width of the auxiliary line is set to be such that the auxiliary electrode and the auxiliary line constitute the counter electrode stripe so that the auxiliary line is not visible when the organic EL display device is driven. 2 to 20% of the line width of the opposing electrode (meaning the width in the direction orthogonal to the longitudinal direction of the opposing electrode stripe; the same applies hereinafter)
Is preferably set to 5 to 18%, more preferably to 10 to 15%.

The thickness of the auxiliary wiring is approximately 200 nm or more.
Preferably, it is several tens μm. Auxiliary wiring thickness is 20
If it is less than 0 nm, it is difficult to obtain a material having a resistance value of 1 kΩ or less per cm, regardless of the material. On the other hand, when the thickness of the auxiliary wiring exceeds several tens of μm, it takes a long time to form the auxiliary wiring or a conductive film that is a material of the auxiliary wiring.

The material of the above-mentioned auxiliary wiring is not particularly limited as long as an auxiliary wiring having desired electric characteristics can be formed. Cu, Al, Mo, T
Although a conductive material having a relatively high melting point such as a, W, Au, Ag, or Zr may be used, the heat resistance of the organic light emitting material is relatively low as described above. Therefore, in order to suppress a decrease in the luminous ability of the organic light-emitting material due to heat generated when forming the auxiliary wiring or a conductive film serving as the material,
The auxiliary wiring is preferably formed of a metal or an alloy having a melting point of about 400 ° C. or less. When the auxiliary wiring is formed of such a metal or an alloy, the auxiliary wiring or a conductive film to be used for the auxiliary wiring can be easily formed at a low substrate temperature in a short time. It is possible to easily suppress a decrease in the luminous ability of the organic light emitting material due to the heat radiation therein.

Specific examples of the metal having a melting point of about 400 ° C. or lower include Sn, Pb, In, Ga, and Bi. Specific examples of the alloy having a melting point of about 400 ° C. or less include Pb—Sn alloy, Pb—In alloy, and Pb—
Ag alloy, Ga-In alloy, Bi-In alloy, Pb-S
An n-Cd alloy, a Pb-Cd-Sb alloy, and the like can be given.
Among these metals or alloys, In, Pb, Sn,
When the auxiliary wiring is formed of an In-based alloy, a Pb-based alloy or a Sn-based alloy, the following advantages are further obtained. That is, when dielectric breakdown occurs between the transparent counter electrode and the lower electrode stripe, a gas derived from an organic light emitting material or the like is generated from the dielectric breakdown location, and the generation of the gas causes the auxiliary wiring to be disconnected for approximately 5 to 20 μm. However, even if such a disconnection occurs, the auxiliary wiring formed of the above-described metal or alloy is self-repaired. Therefore, it is possible to obtain a more reliable organic EL display device.

The organic EL display device of the present invention comprises the above-described base material, lower electrode stripe, organic light emitting portion material layer, and counter electrode stripe as essential components. In each of the intersections of the lower electrode stripe and the counter electrode stripe in plan view, the lower electrode stripe, the material layer for the organic light emitting section, the transparent counter electrode, and the auxiliary wiring are sequentially laminated from the substrate side. Therefore, each of these intersections functions as an organic EL element, and the organic EL element can be individually driven by connecting the lower electrode stripe and the counter electrode stripe to a predetermined drive circuit. It can function as a pixel.
The luminous efficiency of the organic EL element as a pixel is 1 lm / W.
That is all.

An organic EL device having a luminous efficiency of 1 lm / W or more can be easily obtained by manufacturing the organic EL display device of the present invention by, for example, a method described later.
Further, in the organic EL display device of the present invention, since the opposing electrode stripe is formed by the transparent opposing electrode and the auxiliary wiring, the material, the line width, the thickness, etc. of the auxiliary wiring are appropriately selected so that the display device can be used. Even when the counter electrode stripe is thinned for higher definition, the sheet resistance can be easily reduced to 20Ω / □ or less. That is,
The organic EL display device of the present invention can easily obtain a high-definition display device having a light extraction surface on the counter electrode side.
A display device.

The organic EL display device of the present invention having the above-mentioned advantages is provided, if necessary, in addition to the above-described substrate, lower electrode stripe, material layer for organic light-emitting portion and counter electrode stripe. A protective layer, an interlayer insulating film of (2) or a sealing layer of (3) may be provided.

(1) Protective Layer The protective layer referred to in the present invention is a portion where an auxiliary wiring is formed in order to prevent the organic light emitting portion material layer and the counter electrode from being damaged during the process of forming the auxiliary wiring. Means a layer of an electrically insulating material formed so as to cover at least the transparent counter electrode except for the protective layer. (Used at the time of forming an EL element). The film thickness is generally 0.2 to 10 μm, though it depends on the kind of the above-mentioned electric insulating material.

The above protective layer is formed by forming a layer of the material after forming the transparent counter electrode and patterning this layer into a predetermined shape prior to forming the auxiliary wiring. Therefore, the material of the protective layer is preferably a material having a desired light transmittance and capable of forming a film while suppressing a decrease in the light emission characteristics of the organic EL element.

The protective layer is made of Al ₂ O ₃ —SiO _x (1 ≦ x
≦ 2), metal oxides such as MgO, GeO ₂ , Li ₂ O,
It can be formed of an inorganic compound such as a metal fluoride such as LiF, MgF ₂ , or CaF _2, or silicon oxide or germanium oxide. Organic materials used in the organic light emitting portion (general term for organic light emitting materials, organic materials for hole injection layers and organic materials for electron injection layers; the same applies hereinafter), lower electrode stripes or transparent counter electrodes (especially It is more preferable to use a resin that is soluble in a solvent that does not substantially react with the electron injection film).

As the solvent, the solubility of the organic material used in the organic light emitting portion of the organic EL device is 0.001.
% Or less is particularly preferable, and specific examples thereof include the following fluorinated hydrocarbons. That is, a fluorinated lower paraffin (having a carbon number of 50 or less) such as a linear perfluoroalkane (having a kinematic viscosity of about 0.1 to 1 cSt) or a fluorinated lower amine (having a carbon number of 50 or less) such as perfluoroamine Are 20 or less), and fluorinated polyethers such as perfluoropolyether (having a molecular weight of about 1,000 to 10,000). Also, a fluorinated silicone oil can be used as the solvent.

Solvents such as dichloromethane, dichloroethane, tetrahydrofuran, hexane, and xylene dissolve the organic material used in the organic light-emitting portion, and are not preferred as the above-mentioned solvents in the present invention. Hydrogen peroxide solution, dilute hydrochloric acid, dilute nitric acid, dilute ammonia water, etc. are used for the transparent counter electrode, especially when the transparent counter electrode has a multilayer structure having an electron injecting film. The solvent mentioned above is not preferable as the above-mentioned solvent in the present invention because it causes damage such as dissolution, oxidation and alteration. Then, an aqueous solution of tetramethylammonium hydroxide, an aqueous solution of potassium hydroxide, an aqueous solution of sodium hydroxide, ethylcellosolve acetate, which has been conventionally used as a developing solution or a stripping solution for a photoresist or a dry film photoresist,
Solvents such as butyl cellosolve acetate, butyl ether, isooctane, acetone, methyl ethyl ketone, and methyl isobutyl ketone may also damage the organic material used in the organic light emitting section or the transparent counter electrode (especially an electron injecting film). It is not preferable as the above-mentioned solvent in the invention.

Specific examples of the resin soluble in the above-mentioned solvent include (1) fluorination of polychlorotrifluoroethylene, polydichlorodifluoroethylene, and a copolymer of chlorotrifluoroethylene and dichlorodifluoroethylene. Polyolefin, (2) tetrafluoroethylene and the following formula

Embedded image (3) copolymers of tetrafluoroethylene and perfluoroallyl vinyl ether, copolymers of chlorotrifluoroethylene and perfluoroallyl vinyl ether, tetrafluoroethylene such as copolymers with compounds represented by Fluorinated resins such as copolymers of ethylene and perfluoroalkyl vinyl ether, fluorinated polyethers such as copolymers of chlorotrifluoroethylene and perfluoroalkyl vinyl ether, and (4) fluorinated polysiloxanes . Among these resins, polymers of tetrafluoroethylene and perfluoroallyl vinyl ether having 4 to 8 carbon atoms, and tetrafluoroethylene and 4 to 8 carbon atoms.
And a copolymer with a perfluoroalkyl vinyl ether is preferred.

In the case where the protective layer is formed of a material having a high water absorption (meaning the water absorption measured by a method based on ASTM D570; the same applies hereinafter), the protective layer is formed in the process of manufacturing the organic EL display device. Water is easily absorbed by the protective layer, and the water is released over time after the manufacture of the organic EL display device, and the lower electrode (lower electrode stripe) or the counter electrode stripe (particularly, the electron injecting film) of the organic EL element is formed. If formed, the risk of oxidative corrosion of the electron injecting film) increases. Then, when the lower electrode and the counter electrode stripe of the organic EL element are oxidized and corroded, the light emitting characteristics of the organic EL element deteriorate, and in some cases, no light is emitted. Therefore, the protective layer is preferably formed of a material having a water absorption as low as possible, particularly preferably a material having a water absorption of 0.5% or less. The above-mentioned fluorine resin, MgO, G
eO ₂ , Al ₂ O ₃ , CaF ₂ , LiF, SiO _x (1
≦ x ≦ 2), a protective layer having a water absorption of 0.5% or less can be easily obtained by forming the protective layer with SiN _x (0.1 ≦ x ≦ 4/3) or the like.

(2) Interlayer Insulating Film The interlayer insulating film referred to in the present invention means that a short circuit occurs between the lower electrode stripe and the opposing electrode stripe and that the organic EL
In order to prevent a leak current from occurring in the element, it means an electric insulating film formed so as to cover the surface of the lower electrode stripe at a place where the auxiliary wiring and the lower electrode stripe intersect in plan view. .

The interlayer insulating film may be formed so as to cover the surface of the lower electrode stripe at a place where the auxiliary wiring and the lower electrode stripe intersect when viewed in a plan view. It can be appropriately selected according to the wiring formation position. For example, the organic E shown in FIG.
As in the L display device 20, the interlayer insulating film 22 may be formed so as to be located along the edge of the transparent counter electrode 21 in plan view, or as in the organic EL display device of Example 3 described later. Then, an interlayer insulating film may be formed so as to be located along the central portion of the transparent counter electrode in plan view. In FIG. 6, reference numeral 23 denotes a base material, reference numeral 24 denotes a lower electrode stripe, reference numeral 25 denotes a material layer for an organic light emitting portion, and reference numeral 2
Reference numeral 6 denotes an auxiliary wiring, and reference numeral 27 denotes a counter electrode stripe constituted by the transparent counter electrode 22 and the auxiliary wiring 26.

The interlayer insulating film has a desired electric insulating property,
In addition, it is only necessary to be made of a material capable of high-definition patterning, but in order to prevent the organic light emitting portion material layer and the counter electrode stripe from being disconnected at the end of the interlayer insulating film, the vertical cross section in the short direction is used. It is preferable that the shape is a trapezoidal shape in which the lower base is wider than the upper base, or a kamaboko shape. As a material of the interlayer insulating film, for example, an electrically insulating polymer,
An electrically insulating inorganic compound or the like is preferably used. Specific examples of the above-mentioned electrically insulating polymer include the above-mentioned fluorine-based resin, polyimide, fluorinated polyimide, polyolefin, polyacrylate, polyquinoline and the like as the material of the protective layer, and the above-mentioned electrically insulating inorganic compound. Specific examples include the inorganic compounds exemplified above as the material of the protective layer, SiO _{2 with} fluorine addition, and amorphous carbon.

For the same reason as the above-described protective layer, the water absorption of the interlayer insulating film is preferably as low as possible.
% Is particularly preferred. As the material of the interlayer insulating film, the above-mentioned fluororesin, polyolefin, MgO, Ge
O ₂ , Al ₂ O ₃ , CaF ₂ , LiF, SiO _x (1 ≦ x
≦ 2), SiN _x (0.1 ≦ x ≦ 4/3), etc., makes it possible to relatively easily obtain an interlayer insulating film having a water absorption of 0.5% or less.

(3) Sealing Layer The sealing layer in the present invention means a layer provided for preventing moisture and oxygen from entering the organic EL element constituting the organic EL display device. . When moisture or oxygen enters the organic EL element, its light emission characteristics and element life are reduced.

Specific examples of the material of the sealing layer include, for example,
A copolymer obtained by copolymerizing a monomer mixture containing tetrafluoroethylene and at least one comonomer, a fluorinated copolymer having a cyclic structure in a copolymer main chain,
Polyethylene, polypropylene, polymethyl methacrylate, polyimide, polyurea, polytetrafluoroethylene, polychlorotrifluoroethylene, polydichlorodifluoroethylene, copolymer of chlorotrifluoroethylene and dichlorodifluoroethylene, water absorption 1%
The above water-absorbing substances and moisture-proof substances having a water absorption of 0.1% or less, In, Sn, Pb, Au, Cu, Ag, Al, T
metals such as i and Ni, MgO, SiO, SiO ₂ , Al ₂
O ₃ , GeO, NiO, CaO, BaO, Fe ₂ O ₃ ,
Metal oxides such as Y ₂ O ₃ and TiO ₂ , MgF ₂ and Li
Metal fluorides such as F, AlF ₃ and CaF ₂ , liquid fluorinated hydrocarbons such as perfluoroalkane, perfluoroamine and perfluoropolyether, and adsorbents that adsorb moisture and oxygen are dispersed in the liquid fluorinated hydrocarbons And the like.

The present invention in which the above-mentioned protective layer, interlayer insulating film or sealing layer is an optional component, and the above-mentioned base material, lower electrode stripe, material layer for organic light emitting section and counter electrode stripe are essential components. The organic EL display device can be manufactured, for example, as follows. First, a required number of lower electrode stripes are formed on one surface of a desired base material. The material and shape of the base material and the material, shape, size, pitch, and the like of the lower electrode stripe have already been described in the description of the organic EL display device of the present invention, and the description thereof will be omitted.

When a lower electrode stripe is formed using a substrate made of an electrically insulating material, for example, a conductive film serving as the material of the lower electrode stripe may be formed by various methods such as vacuum evaporation, sputtering, and ion plating. PVD
After forming the conductive film by various methods such as photolithography, electron beam lithography, and X-ray lithography, the conductive film is formed into a desired shape by a method such as a CVD method, various CVD methods, or a coating thermal decomposition method. It can be carried out. Further, it can be directly formed by a method such as a PVD method, a CVD method, or a screen printing method using a mask having a predetermined shape.

On the other hand, when a base material made of a conductive material is used (a base material having a multilayer structure having a layer made of an electrically insulating material and a layer made of a conductive material is used, and The lower electrode stripe is formed in a layer made of a conductive material in the material.) The lower electrode stripe is formed, for example, by a method such as an anodic oxidation method or an ion implantation method, or by forming a substrate made of the conductive material or a conductive material. This can be performed by forming an electrical insulating portion at a desired position of the layer made of the conductive material over the entire area in the thickness direction. Alternatively, boron, phosphorus, or the like may be ion-implanted into a desired portion of a semiconductor such as polysilicon to reduce the resistance of the portion, and this portion may be used as a lower electrode stripe. The method for forming the lower electrode stripe depends on the material of the base material, the intended use of the organic EL display device,
It can be appropriately selected in consideration of productivity and the like.

After the lower electrode stripe is manufactured as described above, the above-described interlayer insulating film is formed as necessary. Since the material, shape, formation position, and the like of the interlayer insulating film have already been described in the description of the organic EL display device of the present invention, the description is omitted here.

The interlayer insulating film is made of, for example, a PVD method, C
After being formed by a method such as a VD method, a coating thermal decomposition method, a spin coating method, and a dipping method, the electric insulating film is patterned into a desired shape by a method such as a photolithography method, an electron beam lithography method, and an X-ray lithography method. Can be obtained by The lithography method may use a wet etching method or a dry etching method. Whether to use the wet etching method or the dry etching method can be appropriately selected in consideration of the material of the electric insulating film, the shape and size of the intended interlayer insulating film, productivity, and the like.

After the formation of the interlayer insulating film as required, the outer surface of the substrate on the side where the lower electrode stripe is formed (the surface of the lower electrode stripe,
When the interlayer insulating film is formed, it includes the surface of the interlayer insulating film. 2), a material layer for an organic light emitting portion to be an organic light emitting portion in the organic EL element is formed. Regarding the layer structure and the material of the material layer for the organic light emitting section, the organic EL of the present invention
Since the display device has already been described, the description thereof is omitted here.

The material layer for the organic light-emitting portion constitutes an organic EL element together with the above-described lower electrode stripe and a later-described counter electrode stripe. Therefore, at least a portion of the lower electrode stripe where the organic EL element is to be formed is formed on the lower electrode stripe. It must be formed, but it may be formed not only on the lower electrode stripe at that location, but also around it. Even if a material layer for an organic light emitting portion is formed on the periphery of the lower electrode stripe in addition to the portion where the organic EL element is to be formed, the intended organic EL display device can be obtained. The outer surface of the substrate on which the side is formed (the surface of the lower electrode stripe, and
When the interlayer insulating film is formed, it includes the surface of the interlayer insulating film. It is simpler to form the organic light emitting section material layer on the whole.

In forming the material layer for the organic light emitting section, in order to obtain an organic EL display device having high light emitting characteristics of each organic EL element, at least the material layer for the light emitting layer should be formed by a vacuum evaporation method. Is preferred. Other layers constituting the organic light emitting portion material layer can be formed by applying various methods according to the material, but if other layers are formed by a vacuum evaporation method, the vacuum Since the material layer for the organic light emitting unit can be formed only by the vapor deposition method, it is practically convenient.

Subsequent to the formation of the organic light emitting section material layer, a transparent counter electrode is formed on the organic light emitting section material layer. Since the material, shape, size, pitch, and the like of the transparent counter electrode have already been described in the description of the organic EL display device of the present invention, the description is omitted here.

The transparent counter electrode may be formed, for example, by forming a conductive film as a material of the transparent counter electrode by a PVD method or a CVD method, and then forming the conductive film by photolithography, electron beam lithography, or ion implantation. It can be performed by patterning into a desired shape by a method such as a method of insulating a portion. Further, it can be directly formed by a PVD method or a CVD method using a mask having a predetermined shape. At this time, in order to form an organic EL element having high light emission characteristics, it is preferable to form a transparent counter electrode or a conductive film to be a material thereof as quickly as possible at a substrate temperature as low as possible.

By forming up to the transparent counter electrode, an organic EL element is formed at each intersection of the transparent counter electrode and the lower electrode stripe in plan view.
In order to obtain the organic EL display device of the present invention, an auxiliary wiring is further formed. After the formation of the transparent counter electrode, a protective layer may be formed if necessary, and an auxiliary wiring may be formed thereafter. The protective layer is formed so as to cover the transparent counter electrode. However, a protective layer is not formed at a portion where an auxiliary wiring is to be formed. Since the material and thickness of the protective layer have already been described in the description of the organic EL display device of the present invention, the description is omitted here.

The protective layer may be formed, for example, by forming a protective layer material on the entire outer surface of the substrate after providing the transparent counter electrode (the outer surface on the side where the transparent counter electrode is provided). After the formation of the layer, the protective layer material layer can be formed by patterning the material layer into a desired shape by lithography. The formation of the protective layer material layer at this time
Depending on the material, it can be performed by a method such as a PVD method, a CVD method, a spin coating method, and a dipping method.

In the case where the protective layer material layer is formed by the PVD method or the CVD method in order to suppress the deterioration of the light emitting characteristics of the organic EL element, the protective layer material layer is formed as quickly as possible under the lowest substrate temperature. Is preferably formed. From the same viewpoint, when the protective layer material layer is formed by a method such as a spin coating method or a dipping method,
It is preferable to use a coating solution prepared using the above-described fluorine-based resin and a solvent (solvent substantially inactive with respect to the organic EL element) or a prepolymer of the above-described fluorine-based resin.

The lithography method for patterning the protective layer material layer may be a method using a wet etching method or a method using a dry etching method. Whether to use the wet etching method or the dry etching method can be appropriately selected in consideration of the material of the protective layer material layer, the desired shape of the protective layer, the productivity, and the like. When a high-definition auxiliary wiring is to be formed, it is preferable to perform patterning by a dry etching method, in particular, a lithography method using a dry etching method using a low-temperature stage.

When the material layer for the protective layer has photosensitivity, a resist pattern may be formed using the material layer for the protective layer as a resist film. In such a case, it is necessary to form a resist pattern on the protective layer material layer. In any case, the peeling of the resist pattern (including the case where the protective layer material layer is used as a resist pattern) is preferably performed after the formation of the auxiliary wiring material layer, as described later.

After forming a protective layer, which is an optional component, as necessary, an auxiliary wiring is formed. Auxiliary wiring material,
Since the shape, size, and the like have already been described in the description of the organic EL display device of the present invention, the description is omitted here. The formation of the auxiliary wiring in the case where the protective layer is not formed is performed, for example, by forming the auxiliary wiring material on the entire outer surface of the base material (the outer surface on the side where the transparent counter electrode is provided) after the provision of the transparent counter electrode. After the conductive film to be formed is formed by a PVD method or a CVD method, the conductive film is patterned into a desired shape by a lithography method.

In order to suppress the deterioration of the light emission characteristics of the organic EL element, it is preferable that the conductive film is formed as quickly as possible at a substrate temperature as low as possible. From the same viewpoint, the resist film used in the lithography method is formed of the fluorine-based resin exemplified above in the description of the protective layer, and its developing solution and etching solution (only when the patterning is performed by wet etching). ) And the stripping solution, it is preferable to use the “solvent that is substantially inert to the organic EL element” already described in the description of the protective layer.

On the other hand, the formation of the auxiliary wiring in the case where the protective layer is formed may be performed, for example, in the case where the resist pattern used for forming the protective layer on the protective layer is left as it is. While using the protective layer and the resist pattern as a mask, a material for the auxiliary wiring is deposited by a PVD method or a CVD method, and then the mask is formed on the layer (the auxiliary wiring) formed on the mask. Can be performed by removing the entire layer made of the above material).

The removal of the mask must not be performed until the mask is completely removed, but is removed until the layer formed on the mask (the layer made of the material of the auxiliary wiring) is removed. For example, it is enough for practical use.
If the surface layer of the mask is dissolved, the layer formed on the mask is naturally removed. As a result, the material layer of the auxiliary wiring formed at a portion other than the portion where the auxiliary wiring is to be formed is removed, so that a desired auxiliary wiring can be obtained.

In order to suppress the deterioration of the light emission characteristics of the organic EL element, the removal of the mask is performed by using the “solvent substantially inert to the organic EL element” described in the description of the protective layer. It is preferable to carry out using. If the material of the auxiliary wiring is deposited while leaving the resist pattern used for forming the protective layer as it is, the laminate of the protective layer and the resist pattern can be used as a mask as described above, and In removing this mask together with the layer formed on the mask (the layer made of the material of the auxiliary wiring), only the resist pattern needs to be peeled off, so that the deterioration of the light emission characteristics of the organic EL element is suppressed. Thus, it becomes easier to form a desired protective layer and auxiliary wiring.

By forming up to the auxiliary wiring as described above, the base material, the lower electrode stripe, the material layer for the organic light emitting section and the counter electrode stripe are provided as essential constituent members, and the protective layer and the interlayer insulating film are formed. The organic EL display device of the present invention having any constituent members can be obtained.

As described above, when moisture or oxygen enters the organic EL element constituting the organic EL display device, the light emission characteristics and element life are reduced. Therefore, after forming the auxiliary wiring, it is preferable to form a sealing layer for preventing moisture and oxygen from entering the organic EL element. Since the material of the sealing layer has already been described in the description of the organic EL display device of the present invention, the description is omitted here.

In forming the sealing layer, a PVD method, a CVD method, a spin coating method, a casting method or the like can be appropriately applied according to the material of the sealing layer. Care should be taken that the light emitting characteristics of the organic EL element are not degraded by the solvent used for forming the sealing layer.

When a liquid material such as a liquid fluorinated hydrocarbon or an adsorbent for adsorbing moisture or oxygen is dispersed in the liquid fluorinated hydrocarbon as a material of the sealing layer, the liquid fluorinated hydrocarbon is formed on a substrate. The organic EL element is formed while forming a space between the organic EL element and the organic EL element in cooperation with the base material outside the organic EL element (there may be another sealing layer). It is preferable that a housing material to cover is provided, and a sealing layer is formed by filling the space formed by the base material and the housing material with the liquid material.
As the housing material, a material made of glass or a polymer (for example, ethylene trifluoride chloride) having a small water absorption is preferably used. When using a housing material, only the housing material may be provided without providing the above-described sealing layer, or a space formed by the housing material and the base material after the housing material is provided. A layer of an adsorbent for adsorbing oxygen or water may be provided on the substrate, or particles of the adsorbent may be dispersed.

[0078]

Embodiments of the present invention will be described below. Example 1 First, a 10 cm square plate glass having a 100 nm-thick two-layered conductive film made of a Cr film and an Au film formed on one surface (manufactured by HOWA SANGYO CO., LTD.) Was prepared. Said C
The thickness of the r film is about 5 nm, and the Cr film is an undercoat layer for the Au film. Next, the above conductive film is patterned by photolithography,
As shown in (a) and (b), a substrate 1 made of sheet glass
A lower electrode stripe 2 having a stripe shape of 280 μm width and 10 cm length is formed on one side of
Twenty glass plates were formed (hereinafter, the plate glass after forming up to the lower electrode stripe 2 is referred to as “substrate 3 with lower electrode stripe”).

The substrate 3 with the lower electrode stripe was subjected to ultrasonic cleaning in isopropyl alcohol for 3 minutes, and further cleaned for 30 minutes using a cleaning device using a combination of UV and ozone. Substrate 3
Was placed in a commercially available vacuum evaporation apparatus (manufactured by Nippon Vacuum Engineering Co., Ltd.) and fixed to a substrate holder. Thereafter, a material layer for a hole transport layer, a material layer for a light emitting layer, and a transparent counter electrode are sequentially formed by the above-described vacuum deposition apparatus in the following manner.
As shown in (b), an organic light-emitting portion composed of two layers, a material layer for a hole transport layer and a light-emitting layer, is formed on the outer surface of the substrate 3 with the lower electrode stripe on the side where the lower electrode stripe 2 is formed. Material layer 4 and a transparent counter electrode 5 were provided.

First, N, N'-diphenyl-N, N'-
Bis- (1-naphthyl)-[1,1'biphenyl]-
Using 4,4′-diamine (hereinafter abbreviated as “NPD”) as a deposition material, a film is formed on the entire outer surface of the substrate 3 with the lower electrode stripe on the side where the lower electrode stripe 2 is formed. An 80-nm-thick hole transport layer material layer (NPD layer) was formed. Next, tris (8-hydroxyquinolinol) aluminum (hereinafter referred to as “Al
q ". ) Was used as a vapor deposition material to form a light emitting layer material layer (Alq layer) with a thickness of 75 nm on the hole transport layer material layer (NPD layer).

Then, using Mg and Ag as the vapor deposition material, a width of 200 mm was formed on the light emitting layer material layer (Alq layer).
μm, 4.6n long striped film thickness 7n
A total of 320 transparent counter electrodes (Mg-Ag layers) 5 were formed at a pitch of 300 μm. In forming the transparent counter electrode 5, a mask having a predetermined shape is used.
Was 1.4 nm / s, and the deposition rate of Ag was 0.1 nm / s. Each transparent counter electrode 5 was formed so as to be orthogonal to each of the above-described lower electrode stripes 2 in plan view. The light transmittance (wavelength of the measurement light: 510 nm) of the transparent counter electrode 5 was 70%, and the sheet resistance was 200 Ω / □. During the period from the formation of the above-described hole transport layer material layer (NPD layer) to the completion of the formation of the transparent counter electrode 5 described above, the vacuum chamber of the vacuum evaporation apparatus was not opened at all, and each layer was not opened. Was continuously performed.

In the substrate 3 with the lower electrode stripe after the formation of the transparent counter electrode 5, the lower electrode stripe 2 and the transparent counter electrode 5 intersect in plan view as described above. As viewed from the substrate, the lower electrode stripe 2, the organic light emitting portion material layer 4, and the transparent counter electrode 5 are laminated in this order. Therefore, the intersection in a plan view functions as an organic EL element 6 (see FIG. 2) including the lower electrode, the organic light emitting section, and the counter electrode, and the organic EL element 6 emits green EL light.

Next, the entire outer surface of the substrate 3 with the lower electrode stripe on the side where the transparent counter electrode 5 is formed is covered with FIG.
As shown in (a) and (b), a 2 μm-thick fluorine-based resin layer (after curing, having a water absorption of 0.01% or less) 7 was formed by spin coating. At this time, as a material (coating solution) of the fluorine-based resin layer 7, Cytop CTX-809A manufactured by Asahi Glass Co., Ltd. is used, and the spin coating is performed at a rotation speed of 1200 rpm and a rotation time of 30 seconds for the substrate 3 with the lower electrode stripe. After going,
Heat treatment was performed at 80 ° C. for 1 minute using a hot plate to dry and harden.

Next, as shown in FIG. 4A, a 3 μm-thick positive resist (TOPR-1000 manufactured by Tokyo Ohka Co., Ltd.) layer 8 was formed on the fluororesin layer 7. The formation of the positive resist layer 8 is also performed by using the spin coating method, and the number of rotations of the substrate 3 with the lower electrode stripe is set to 30.
After spin coating at 00 rpm and a rotation time of 30 seconds, heat treatment was performed at 90 ° C. for 1 minute using a hot plate to dry and cure. Thereafter, the positive resist layer 8 is exposed to g-line (wavelength: 436 nm) using a mask having a predetermined shape, and further developed to obtain a resist pattern shown in FIG.
As shown in (b), a resist pattern 9 having an opening 9a at a predetermined position was obtained. Each of the openings 9a is formed to be orthogonal to each of the above-described lower electrode stripes 2 (see FIG. 1) in plan view.

Next, the fluorine-based resin layer 7 was patterned by plasma etching using the resist pattern 9 as a mask. At this time, CHF ₃ gas and C
A mixed gas of F ₄ gas and Ar gas is used as an etching gas, and the flow rate of these gases is set to CHF ₃ gas = 24 SC
CM, CF ₄ gas = 24 SCCM, Ar gas = 98 SC
CM, vacuum degree 0.5 Torr, plasma output 30
The etching was performed at 0 W.

By the above patterning, as shown in FIG. 4C, the outer surface of the substrate 3 with the lower electrode stripe on the side where the lower electrode stripe 2 is formed has a shape in plan view having a width of 20 μm. The protective layer 10 made of a fluorine-based resin was formed, in which a total of 320 openings 10a each having a stripe shape of 4.6 cm in length were formed at a pitch of 300 μm. Note that the two-dot chain line in FIG. 4C indicates the upper end of the fluorine-based resin layer 7 before being etched.

The substrate 3 with the lower electrode stripe having been subjected to the above processing is fixed again to the substrate holder of the vacuum evaporation apparatus.
On the outer surface of the substrate 3 with the lower electrode stripe on the side where the protective layer 10 is formed, a film thickness of 1 μm is formed by a vacuum evaporation method.
m of In film was formed. As shown in FIG. 4D, the In film 11 is formed not only on the upper surface of the protective layer 10 but also on the surface of the transparent counter electrode 5 exposed from the opening 10a formed in the protective layer 10. Was.

Thereafter, a liquid fluorinated hydrocarbon (CT-So available from Asahi Glass Co., Ltd.) was used as a stripper for the resist pattern 9.
lv 100), and the above In film 1
The substrate 3 with the lower electrode stripe after forming up to 1 was immersed and ultrasonic vibration was applied, and ultrasonic cleaning was performed in this state for 3 minutes. With this ultrasonic cleaning, the resist pattern 9
The In film 11 formed thereon was removed together with the resist pattern 9, but the In film 11 formed on the surface of each transparent counter electrode 5 remained. As a result, a total of the stripe-shaped transparent counter electrode 5 and an In film formed on the surface of the transparent counter electrode 5 (this In film corresponds to an auxiliary wiring, and is hereinafter referred to as “auxiliary wiring 11a”). 320 counter electrode stripes 12 were obtained, and at the same time, the intended organic EL display device was obtained.

As shown in FIG. 5, the organic EL light emitting device 13 comprises a substrate 1 made of a sheet glass, a total of 240 lower electrode stripes 2 formed on one side of the substrate 1, The organic light emitting portion material layer 4 formed so as to cover the stripe 2 and the organic light emitting portion material layer 4 were formed so as to be orthogonal to each of the lower electrode stripes 2 in plan view. A protective layer 10 is provided on the surface of the transparent counter electrode 5 and the surface of the organic light emitting section material layer 4 except for the formation of the auxiliary wiring 11a. I have.

Each of the lower electrode stripes 2 has a width of 280 μm and a length of 10 cm as described above, and these lower electrode stripes 2 are formed at a pitch of 300 μm. In addition, individual counter electrode stripes 1
Reference numeral 2 denotes a transparent counter electrode 5 and auxiliary wirings 11a formed on the surface of the transparent counter electrode 5. The resistance value of each counter electrode stripe 12 per cm is 150.
Ω.

Each of the transparent counter electrodes 5 has a stripe shape of 200 μm in width and 4.6 cm in length as described above.
Each auxiliary wiring 11a has a stripe shape with a width of 20 μm and a length of 4.6 cm. The auxiliary wiring 11a is 3
It is formed at a pitch of 00 μm.

In the above-mentioned organic EL display device 13,
The intersection of the transparent counter electrode 5 and the lower electrode stripe 2 in plan view functions as a pixel including the organic EL element 6.

Example 2 After forming up to the transparent counter electrode in exactly the same manner as in Example 1, the In—Zn— layer was formed on the Mg—Ag layer serving as the transparent counter electrode.
A 150 nm thick transparent conductive film made of an O-based amorphous oxide was formed by a sputtering method. At this time, the sputtering target was an In—Zn—O-based oxide sintered body (indium (In) atomic ratio In / (In + Z).
n) = 0.68), and a mixed gas of Ar gas and O ₂ gas (Ar gas: O ₂ gas = 1000: 8 (volume ratio))
Is introduced into the vacuum chamber so that the pressure in the vacuum chamber becomes 3 × 10 ⁻¹ Pa, and sputtering is performed.
/ Cm ² and the substrate temperature was room temperature. In forming the film, a polyimide mask was used, and the shape and size of the transparent conductive film in plan view substantially matched the shape and size of the transparent counter electrode in plan view. did. Thereafter, a protective layer and an auxiliary wiring were provided in exactly the same manner as in Example 1 to obtain a target organic EL display device. The resistance value per cm of each of the opposing electrode stripes constituting the organic EL display device is 120Ω.

Example 3 First, a substrate with lower electrode stripes was obtained in exactly the same manner as in Example 1, and the entire outer surface of the substrate with lower electrode stripes on which the lower electrode stripes were formed was applied by spin coating. Thus, a polyolefin-based electric insulating film was formed. At this time, as a material of the electric insulating film,
After using ZCOAT-1410 manufactured by Zeon Corporation, which is a coating solution capable of forming a photosensitive electric insulating film, the coating solution was spin-coated and then dried.
Heat treatment was performed at 0 ° C. for 30 minutes. Next, the above-mentioned electric insulating film is exposed to g-rays (wavelength: 436 nm; irradiation energy: 120 mJ / cm ² ) using a mask having a predetermined shape, developed, and then developed at 250 ° C. using a clean oven at 250 ° C.
Cure for hours, then UV / O ₂ The treatment was performed for 10 minutes using an ashing apparatus.

By performing the above processing by the ashing device, the outer surface of the substrate with the lower electrode stripe on the side where the lower electrode stripe is formed has a width of about 30 μm.
m, stripe-shaped film with a length of 4.6 cm and a thickness of 1 μm
Were formed at a pitch of 300 μm. These interlayer insulating films are formed so as to be orthogonal to each of the lower electrode stripes in plan view, and the vertical sectional shape in the width direction of the interlayer insulating film is such that the lower bottom is wider than the upper bottom. It has a shape or a semi-cylindrical shape.

Thereafter, a material layer for an organic light emitting portion, a transparent counter electrode and an auxiliary wiring were formed in exactly the same manner as in Example 1 to obtain an organic EL display device. At this time, the interlayer insulating film and the transparent counter electrode were formed such that the interlayer insulating film was located along the center of the transparent counter electrode when viewed in plan. Further, the protective layer formed in Example 1 was finally completely peeled off. Each of the auxiliary wirings was formed so as to be completely included in any of the above-described interlayer insulating films when viewed in plan.

Comparative Example 1 An organic EL display device was obtained in exactly the same manner as in Example 1 except that no auxiliary wiring was provided. 1c of individual counter electrode stripe (transparent counter electrode) in this organic EL display device
The resistance value per m is 10 kΩ.

Comparative Example 2 OFPR-800 manufactured by Tokyo Ohka Co., Ltd. was used as a material for the positive resist film 8 (see FIG. 4), and a 2% NaOH aqueous solution was used as a stripping solution for the resist pattern 9 (see FIG. 4). An organic EL display device was obtained in exactly the same manner as in Example 1 except that the device was used. An attempt was made to measure the resistance per cm of each opposing electrode stripe (transparent opposing electrode) in this organic EL display device, but the measurement was not possible.

Measurement of Luminous Efficiency For each of the organic EL display devices obtained in Examples 1 to 3 and Comparative Examples 1 and 2, the luminous efficiency of the organic EL device was measured under the following conditions. First, predetermined lower electrode stripes and predetermined counter electrode stripes in the organic EL display device are connected to each other, and a total of 178 organic EL elements (approximately 0.1 cm ² in plan view area. The EL elements are collectively referred to as an “organic EL element group”). Next, using the lower electrode stripe as an anode and the counter electrode stripe as a cathode, a direct current constant current (current density is 1 mA / c) was applied to the organic EL element group.
m ² ) was flowed, and each of the organic EL elements constituting the organic EL element group was turned on, and the luminance at this time was measured.

The luminous efficiency was determined by the following equation.

(Equation 1)

As a result, the luminous efficiency of each of the organic EL display devices obtained in Examples 1 to 3 was 1.2 to 1.
The luminous efficiency of the organic EL display device obtained in Comparative Example 1 was 0.8 lm / W, and the luminous efficiency of the organic EL element in the organic EL display device obtained in Comparative Example 2 was 0.1 lm / W. It was 05 lm / W.

The luminous efficiency of the organic EL element in the organic EL display device obtained in Comparative Example 1 was low as described above because the resistance per 1 cm of the counter electrode stripe was as high as 10 kΩ. It is presumed that this is because the applied voltage increased.

The low luminous efficiency of the organic EL element in the organic EL display device obtained in Comparative Example 2 is as described above because the material is used as a material for forming the positive resist film 8 (see FIG. 4). The solvent in the positive resist solution that has entered the light emitting layer (Alq layer)
It is presumed that the 2% NaOH aqueous solution used as the stripping solution for the luminescent layer (see FIG. 4) penetrated into the light emitting layer (Alq layer), and the luminous ability of Alq was significantly reduced by contact with these solvents. Actually, 80% of the pixels (organic EL elements) are dissolved by the positive resist solution, and these pixels do not retain their shapes. The above measured values are measured for the remaining pixels.

Driving Test For each of the organic EL display devices obtained in Examples 1 to 3 and Comparative Examples 1 and 2, a lower electrode stripe was used as a scanning electrode and a counter electrode stripe was used as a signal electrode. And a predetermined drive circuit were connected, and two-part drive was performed at a duty ratio of 1/120. As a result, in the organic EL display devices obtained in any of Example 1 to Example 3, since the resistance value of the counter electrode stripe was small, image display could be performed without any problem.

On the other hand, in the organic EL display device obtained in Comparative Example 1, since the resistance value of the counter electrode stripe was large, the voltage drop reached a maximum of 10 V or more, and no image could be displayed. The organic E obtained in Comparative Example 2
In the L display device, the organic E remaining as pixels
Since the L element was only 20% and the luminous efficiency was extremely low, it could not be driven.

Measurement of Leakage Current For each of the organic EL display devices obtained in Examples 1 to 3, a reverse bias of 5 V (meaning a voltage application in a direction opposite to the voltage application direction in which the organic EL element emits light). .)
Was applied to measure the leakage current. As a result, a leak current of 20 μA was measured for the organic EL display device obtained in Example 1, 800 μA for the organic EL display device obtained in Example 2, and 15 μA for the organic EL display device obtained in Example 3, These leak currents have no problem in image display. However, in order to keep power consumption low, it is preferable to reduce the leakage current as much as possible. For this purpose, as is clear from the comparison between the organic EL display device of the second embodiment and the organic EL display device of the third embodiment. Preferably, an interlayer insulating film is provided so as to cover the surface of the lower electrode stripe at a position where the auxiliary wiring and the lower electrode stripe intersect in plan view.

[0107]

As described above, according to the present invention,
It is possible to provide a high-definition organic EL display device having practically usable performance despite the fact that the counter electrode side can be used as a light extraction surface.

[Brief description of the drawings]

FIG. 1A is a cross-sectional view schematically illustrating a substrate with a lower electrode stripe manufactured in Example 1 as viewed in a longitudinal direction of the lower electrode stripe.
FIG. 3B is a cross-sectional view schematically illustrating the substrate with the lower electrode stripe as viewed in the short direction of the lower electrode stripe.

FIG. 2A is a cross-sectional view schematically showing a substrate with a lower electrode stripe after forming up to a transparent counter electrode in Example 1 as viewed in the longitudinal direction of the lower electrode stripe. FIG. 3B is a cross-sectional view schematically illustrating the substrate with the lower electrode stripe as viewed in the short direction of the lower electrode stripe.

FIG. 3A is a cross-sectional view schematically showing a substrate with a lower electrode stripe after forming up to a protective layer material layer in Example 1 as viewed in a longitudinal direction of the lower electrode stripe. FIG. 3B is a cross-sectional view schematically showing the substrate with the lower electrode stripe as viewed in the short direction of the lower electrode stripe.

FIG. 4 (a) shows the substrate with a lower electrode stripe after forming up to a resist film in forming a protective layer by photolithography in Example 1 when the short direction of the lower electrode stripe is desired. FIG. 4B is a cross-sectional view schematically illustrating a substrate with a lower electrode stripe after the resist film is patterned into a resist pattern, as viewed in a short direction of the lower electrode stripe. And FIG.
(C) is a cross-sectional view schematically showing the substrate with the lower electrode stripe after patterning the protective layer material layer on the protective layer using the resist pattern as a mask, as viewed in the short direction of the lower electrode stripe. And
FIG. 4D is a cross-sectional view schematically showing the substrate with the lower electrode stripe after the formation of the In film for the auxiliary wiring, as viewed in the short direction of the lower electrode stripe.

FIG. 5A is a plan view schematically showing the organic EL display device manufactured in Example 1 when viewed from the side on which the counter electrode stripe is formed, and FIG. 5B is a plan view thereof. FIG. 4 is a cross-sectional view schematically illustrating an organic EL display device as viewed in a short direction of a lower electrode stripe.

FIG. 6A is a cross-sectional view schematically showing an example of an organic EL display device having an interlayer insulating film among the organic EL display devices of the present invention, as viewed in a short direction of the interlayer insulating film. FIG. 6B is a cross-sectional view schematically showing the organic EL display device as viewed in the longitudinal direction of the interlayer insulating film.

[Explanation of symbols]

1,23: Base material, 2,24: Lower electrode stripe,
4, 25: a material layer for an organic light emitting portion; 5, 21: a transparent counter electrode; 6: an organic EL element (pixel); 10: a protective layer;
11a, 26: auxiliary wiring, 12, 27: counter electrode stripe, 13, 20: organic EL display device, 22:
Interlayer insulating film.

Claims (7)

[Claims] 1. A base material, a plurality of lower electrode stripes formed on the base material, a material layer for an organic light emitting unit formed on each of the lower electrode stripes, and the organic light emitting unit A plurality of opposing electrode stripes formed so as to intersect with each of the lower electrode stripes via a material layer for use, and each of the opposing electrode stripes has at least a plane with the lower electrode stripe. A transparent counter electrode formed at each of the intersections as viewed, and provided on the surface of the transparent counter electrode, and formed so as to intersect each of the lower electrode stripes in plan view. The auxiliary wiring has a lower resistance value than the resistance value of the transparent counter electrode which is the base of the auxiliary wiring, and the line width of the auxiliary wiring is lower than the base of the auxiliary wiring. The intersection of the transparent counter electrode and the lower electrode stripe in a plan view is smaller than the line width of the transparent counter electrode, which functions as a pixel including an organic EL element, and the light emission of the organic EL element is obtained. An organic EL display device having an efficiency of 1 lm / W or more. 2. The organic EL display according to claim 1, wherein the auxiliary wiring is made of a substance having a resistivity of 5 × 10 ⁻⁵ Ω · cm or less. 3. The resistance value per 1 cm of the auxiliary wiring is 1 kΩ.
The organic EL according to claim 1 or 2, wherein
Display device. 4. The auxiliary wiring according to claim 1, wherein a line width of the auxiliary wiring is 2 to 20% of a line width of the transparent counter electrode serving as a base of the auxiliary wiring. Organic EL display device. 5. The organic EL display device according to claim 1, wherein the auxiliary wiring is made of a metal or an alloy having a melting point of 400 ° C. or lower. 6. A transparent counter electrode and a material layer for an organic light emitting section are covered with a protective layer having a predetermined opening,
The organic EL display device according to any one of claims 1 to 5, wherein an auxiliary wiring is formed on a surface of the member exposed from the opening. 7. An interlayer insulating film is formed on a surface of the lower electrode stripe so as to cover a place where the auxiliary wiring and the lower electrode stripe intersect when viewed in a plan view. 6. Organic E according to any one of 6.
L display device.