JPH1172401A - Semiconductor pressure sensor and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor in which, when a glass pedestal is die-bonded to a metal member, even in the case where a position deviation occurs, cracks do not occur in the glass pedestal, and provide further manufacturing method therefor. SOLUTION: A semiconductor pressure sensor chip 1 having a diaphragm 1a is joined to one face of a glass pedestal 2 by anode joining, etc., and a metal film 3 is formed on the other face side. The glass pedestal 2 is die-bonded to a metal pipe 4 having a pressure introduction hole 4a with solder 5 via the metal film 3. Here, in a through hole 2a of the glass pedestal 2, a diameter of the through hole 2a on a joint face side to the semiconductor pressure sensor chip 1 of the glass pedestal 2 is smaller than that of the through hole 2a on the other face side, and a shape of the through hole 2a is tapered.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor pressure sensor and a method for manufacturing the same.

[0002]

2. Description of the Related Art FIG. 11 is a schematic sectional view showing a conventional semiconductor pressure sensor. Reference numeral 1 denotes a semiconductor pressure sensor chip, and a diaphragm 1a is formed by forming a substantially central portion of a single-crystal silicon substrate in a thin shape to form a diaphragm 1a.
A strain gage (not shown) whose resistance value changes in accordance with a pressure change is formed on one surface side.

[0003] Reference numeral 2 denotes a glass pedestal, a through hole 2a communicating with the diaphragm 1a is formed substantially at the center, and one surface is joined to the semiconductor pressure sensor chip 1 by anodic bonding or the like, and the other surface is made of metal. The film 3 is formed.

[0004] Reference numeral 11 denotes a package in which a lead 12 is integrally formed, has a recess 11a for accommodating the semiconductor pressure sensor chip 1, and has a pressure introducing hole 4a substantially at the center on the bottom surface of the recess 11a as a metal member. Is integrally molded with the package 11. The portion of the metal pipe 4 exposed at the bottom of the concave portion 11a is formed flat for die bonding the semiconductor pressure sensor chip 1 bonded to the glass pedestal 2.

[0005] This semiconductor pressure sensor has a package 11
The glass pedestal 2 to which the semiconductor pressure sensor chip 1 is bonded is soldered onto the metal pipe 4 exposed at the bottom of the concave portion 11a.
(Tin, tin-antimony alloy, lead, tin-lead alloy, gold-silicon alloy, tin-silver alloy, etc.). At this time, the pressure introducing hole 4a is arranged so as to communicate with the diaphragm 1a via the through hole 2a. The electrodes (not shown) of the semiconductor pressure sensor chip 1 and the leads 12 are wire-bonded by wires 13, and a silicon resin 14 or the like is applied to a surface of the semiconductor pressure sensor chip 1 that is different from the bonding surface with the glass pedestal 2. The open end of the concave portion 11 a of the package 11 is closed by the lid 15.

Another example of a conventional semiconductor pressure sensor will be described. FIG. 12 is a schematic sectional view showing a semiconductor pressure sensor according to a conventional example. The same parts as those of the semiconductor pressure sensor shown in FIG. A metal pipe 4 to which a semiconductor pressure sensor chip 1 is die-bonded via a glass pedestal 2 is inserted into a through hole provided substantially in the center of a flat board 16 made of plastic, metal, or the like. The board is joined to the board 16 by a borosilicate glass 17 or the like. Also, a pin 18 is inserted through the board 16,
The pins 18 are joined to the board 16 by borosilicate glass 17 or the like.

The pins 18 and the electrodes (not shown) of the semiconductor pressure sensor chip 1 are wire-bonded by wires 13, and a silicon resin 14 or the like is provided on the surface of the semiconductor pressure sensor chip 1 that is different from the bonding surface with the glass pedestal 2. It has been applied.

The surface of the board 16 on which the semiconductor pressure sensor chip 1 is die-bonded is covered with a cap 19, and the cap 19 and the board 16 are joined by welding or the like.

The metal film 3 shown in FIGS. 11 and 12 includes a Cr / Ni / Au film, a Ti / Ni / Au film, and a Ti / Ni / Au film.
/ Pt / Au film and the like, and the solder 5 is applied to the surface of Au.

[0010]

However, in the above-described semiconductor pressure sensor, as shown in FIG.
When the bonding position shifts during the die bonding between the glass pedestal 2 and the metal pipe 4, a tensile stress 20 is applied to the solder 5, and a crack 21 occurs near the opening end of the glass pedestal 2, and the semiconductor pressure sensor chip 1 Was destroyed.

SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and an object of the present invention is to provide a glass pedestal that can be displaced during die bonding between a glass pedestal and a metal member. Another object of the present invention is to provide a semiconductor pressure sensor and a method for manufacturing the same, which are free from cracks.

[0012]

According to the first aspect of the present invention,
A semiconductor pressure sensor chip in which a diaphragm is formed by thinning a part of a semiconductor substrate, and a strain gauge is formed on one surface side of the diaphragm; and a through hole communicating with the diaphragm, the semiconductor pressure sensor comprising: A glass pedestal joined to the chip, and a metal member having a pressure introduction hole communicating with the through hole, a metal film is provided on a surface of the glass pedestal that is different from a joining surface with the semiconductor pressure sensor chip. In a semiconductor pressure sensor in which the metal film and the metal member are joined by soldering, the shape of the through hole is such that the diameter of the through hole on the semiconductor pressure sensor chip joining surface side of the glass pedestal is the glass The pedestal is configured to have a diameter smaller than the diameter of the through hole on the metal member joining surface side.

According to a second aspect of the present invention, in the semiconductor pressure sensor according to the first aspect, the diameter of the through hole on the side of the glass pedestal on which the semiconductor pressure sensor chip is bonded is equal to the metal member bonding surface of the glass pedestal. The through-hole may be tapered or curved as a configuration smaller than the diameter of the through-hole on the side.

According to a third aspect of the present invention, in the semiconductor pressure sensor according to the first aspect, the diameter of the through hole on the side of the glass pedestal on which the semiconductor pressure sensor chip is bonded is equal to the metal member bonding surface of the glass pedestal. The through hole has a stepped shape as a configuration smaller than the diameter of the through hole on the side.

According to a fourth aspect of the present invention, in the semiconductor pressure sensor according to the first aspect, the diameter of the through-hole on the side of the glass pedestal on which the semiconductor pressure sensor chip is bonded is equal to the metal member bonding surface of the glass pedestal. As a configuration smaller than the diameter of the through hole on the side, the through hole is formed by a hole having the same diameter and a tapered or curved hole.

According to a fifth aspect of the present invention, in the semiconductor pressure sensor according to the first aspect, the diameter of the through hole on the side of the glass pedestal on which the semiconductor pressure sensor chip is bonded is equal to the metal member bonding surface of the glass pedestal. As a configuration smaller than the diameter of the through-hole on the side, the through-hole, a first hole formed from the side of the glass pedestal where the metal member is bonded to the vicinity of the semiconductor pressure sensor chip bonding surface side, It is characterized by comprising a plurality of second holes communicating with the first hole and having a smaller diameter than the first hole.

According to a sixth aspect of the present invention, there is provided the method of manufacturing a semiconductor pressure sensor according to the second aspect, wherein the diameter of the through hole on the side of the glass pedestal on which the semiconductor pressure sensor chip is bonded is equal to the diameter of the glass pedestal. As a method for making the diameter smaller than the diameter of the through-hole on the metal member joining surface side, when the metal needle is reciprocated by ultrasonic processing, and when the hole is punched by the vibration, the tip shape of the metal needle is tapered or A curved surface is formed, and a tip portion of the metal needle is located in the glass pedestal.

According to a seventh aspect of the present invention, there is provided the method of manufacturing a semiconductor pressure sensor according to the third aspect, wherein the diameter of the through hole on the side of the glass pedestal on which the semiconductor pressure sensor chip is bonded is equal to the diameter of the glass pedestal. As a method of making the diameter smaller than the diameter of the through-hole on the metal member joint surface side, a metal needle is reciprocated by ultrasonic processing, and when a hole is punched by the vibration, a plurality of metals having different diameters as the metal needle are used. Using a needle,
Advancing from the metal member joining surface side of the glass pedestal to the semiconductor pressure sensor chip joining surface side, the diameter of the metal needle is reduced, and the glass pedestal is penetrated by the metal needle having the smallest diameter. It is characterized by the following.

According to an eighth aspect of the present invention, in the method of manufacturing a semiconductor pressure sensor according to the fourth aspect, the diameter of the through hole on the side of the glass pedestal on which the semiconductor pressure sensor chip is bonded is equal to the diameter of the glass pedestal. As a method of making the diameter smaller than the diameter of the through hole on the metal member joining surface side, a through hole is formed in the glass pedestal, and the vicinity of the metal member joining surface side of the hole is larger than the diameter of the hole. The vicinity of the metal member joining surface side of the glass pedestal is tapered or curved by shaving using the cutting jig.

According to a ninth aspect of the present invention, there is provided the method of manufacturing a semiconductor pressure sensor according to the fourth aspect, wherein the diameter of the through hole on the side of the glass pedestal on which the semiconductor pressure sensor chip is bonded is equal to the diameter of the glass pedestal. As a method of making the diameter smaller than the diameter of the through hole on the metal member bonding surface side, the diameter of the through hole on the semiconductor pressure sensor chip bonding surface side of the glass pedestal may be smaller than the diameter of the through hole on the metal member bonding surface side of the glass pedestal. As a method of making the diameter smaller than the diameter of the hole, the metal needle is reciprocated by an ultrasonic processing method, and when the hole is drilled by the vibration, the tip shape of the metal needle is made into a tapered shape or a curved surface shape, and from the glass pedestal. The punching process is stopped when a part of the tip of the metal needle projects.

According to a tenth aspect of the present invention, there is provided the method of manufacturing a semiconductor pressure sensor according to the fifth aspect, wherein the diameter of the through hole on the side of the glass pedestal on which the semiconductor pressure sensor chip is bonded is equal to the diameter of the glass pedestal. As a method of making the diameter smaller than the diameter of the through hole on the metal member joining surface side, when a metal needle is reciprocated by ultrasonic processing, and a hole is punched by the vibration, the metal member joining surface side of the glass pedestal. Performing a drilling process from before, stop the drilling process before penetrating the glass pedestal to form a first hole, using a metal needle smaller in diameter than the metal needle to the first hole A plurality of second holes communicating with each other are formed by an ultrasonic processing method.

According to an eleventh aspect of the present invention, there is provided the method of manufacturing a semiconductor pressure sensor according to the fifth aspect, wherein the diameter of the through hole on the side of the glass pedestal on which the semiconductor pressure sensor chip is bonded is equal to the diameter of the glass pedestal. As a method of making the diameter smaller than the diameter of the through hole on the metal member joining surface side, when a metal needle is reciprocated by ultrasonic processing, and a hole is punched by the vibration, the metal member joining surface side of the glass pedestal. The first hole is formed by stopping the hole forming process before penetrating the glass pedestal, and the second hole having a diameter smaller than the diameter of the first hole is formed by sandblasting. It is formed so as to communicate with the first hole by a method or etching.

[0023]

Embodiments of the present invention will be described below with reference to the drawings. Note that, as a conventional example, the same components as those shown in FIGS. 11 and 12 are denoted by the same reference numerals and description thereof is omitted.

Embodiment 1 FIG. 1 is a schematic sectional view showing a part of a semiconductor pressure sensor according to an embodiment of the present invention. The semiconductor pressure sensor according to the present embodiment differs from the semiconductor pressure sensor shown in FIGS. 11 and 12 as a conventional example in that the diameter of the through hole 2a on the bonding surface side of the glass pedestal 2 with the semiconductor pressure sensor chip 1 is set to the other surface. The diameter of the through hole 2a is smaller than the diameter of the through hole 2a on the side, and the shape of the through hole 2a is tapered.

In this embodiment, as the metal film 3 formed on one surface of the glass pedestal 2, titanium (Ti) and chromium (Cr) are formed on the surface of the glass pedestal 2 (hereinafter, this layer is referred to as an uppermost layer). ), Palladium (Pd), nickel (Ni), platinum (Pt), and tungsten (W) are formed, and a Ni layer is formed thereon (hereinafter, this layer is referred to as an intermediate layer). Although a gold (Au) layer is formed on the Ni layer (hereinafter, this layer is referred to as a lowermost layer), the present invention is not limited to this.
Any metal film 3 to which the solder 5 adheres may be used.

Hereinafter, a method for forming the tapered through hole 2a will be described with reference to the drawings. FIG. 2 is a schematic cross-sectional view illustrating a step of forming a through hole 2a in the glass pedestal 2 according to the present embodiment. First, a steel needle 6 as a metal needle having a tapered tip is reciprocated from one surface side of the glass pedestal 2 by ultrasonic processing so that the tip is located in the glass pedestal 2. A tapered through hole 2a is formed (FIG. 2A).

Finally, a metal film 3 is formed on the side of the glass pedestal 2 where the through hole 2a has a large diameter by sputtering or vapor deposition (FIG. 2B). In the present embodiment, the steel needles 6 are arranged on the ultrasonic machining horn 7 at intervals equal to the arrangement pitch of the through holes 2 a of the glass pedestal 2.

In the present embodiment, the metal film 3 is formed after the formation of the through hole 2a. However, the present invention is not limited to this. First, the metal film 3 is formed and then the through hole 2a is formed. You may do it.

Therefore, in the present embodiment, the diameter of the through hole 2a on the bonding surface side of the glass pedestal 2 with the semiconductor pressure sensor chip 1 is made smaller than the diameter of the through hole 2a on the other surface side. Since the shape of the hole 2a is tapered, the stress applied to the solder 5 can be reduced even when a thermal stress or a mechanical stress is applied from the outside, and the occurrence of cracks in the glass pedestal 2 can be prevented. .

Embodiment 2 = FIG. 3 is a schematic sectional view showing a part of a semiconductor pressure sensor according to another embodiment of the present invention. The semiconductor pressure sensor according to the present embodiment is a semiconductor pressure sensor shown in FIGS. 11 and 12 as a conventional example, in which the diameter of the through hole 2a on the bonding surface side of the glass pedestal 2 with the semiconductor pressure sensor chip 1 is the other surface. The through hole 2a having a step is formed so as to be smaller than the diameter of the through hole 2a on the side.

In this embodiment, the through holes 2a
Is one, but may be two or more.

Hereinafter, the stepped through hole 2 according to the present embodiment will be described.
The method for forming a will be described with reference to the drawings. FIG.
Is a schematic cross-sectional view showing a step of forming a through hole 2a of the glass pedestal 2 according to the present embodiment. First, steel needles (steel needles 8a and 8b in the present embodiment) as a plurality of diameter metal needles are used from one surface side of the glass pedestal 2 by ultrasonic machining so that the diameter gradually decreases. The steel needles 8a and 8b are selected and reciprocated, and the vibrations form the through holes 2a.
At this time, a groove is formed in the glass pedestal 2 by changing the diameter of the steel needles 8a and 8b to be smaller, and only the last steel needle (the steel needle 8b in the present embodiment) holds the glass pedestal 2. So that it penetrates. In addition, the last steel needle (the steel needle 8b in the present embodiment) may be reciprocated from any surface of the glass pedestal 2. In the present embodiment, the steel needles 8a and 8b are arranged on the ultrasonic processing horn 7 at intervals equal to the arrangement pitch of the through holes 2a of the glass pedestal 2.

In the present embodiment, the metal film 3 is formed after the formation of the through-hole 2a. However, the present invention is not limited to this. First, the through-hole 2a is formed after the formation of the metal film 3. You may do it.

Therefore, in the present embodiment, the diameter of the through hole 2a on the bonding surface side of the glass pedestal 2 with the semiconductor pressure sensor chip 1 is made smaller than the diameter of the through hole 2a on the other surface side. Since the shape of the hole 2a is stepped, the solder 5 can be used even when a thermal stress or a mechanical stress is applied from the outside.
Can be alleviated, and the occurrence of cracks in the glass pedestal 2 can be prevented.

Embodiment 3 = FIG. 5 is a schematic sectional view showing a part of a semiconductor pressure sensor according to another embodiment of the present invention. The semiconductor pressure sensor according to the present embodiment is a semiconductor pressure sensor shown in FIGS. 11 and 12 as a conventional example, in which the diameter of the through hole 2a on the bonding surface side of the glass pedestal 2 with the semiconductor pressure sensor chip 1 is the other surface. A tapered or curved hole is formed from the metal layer 3 forming surface side of the glass pedestal 2 to the middle of the glass pedestal 2 so that the diameter is smaller than the diameter of the through hole 2 a on the side of the glass pedestal 2. In this configuration, the through holes 2a are formed.

Hereinafter, a method for forming the through hole 2a according to the present embodiment will be described with reference to the drawings. FIG. 6 is a schematic cross-sectional view illustrating a method of forming a through hole 2a in the glass pedestal 2 according to the present embodiment. In this embodiment, a cutting jig (drill or the like) having a diameter larger than the diameter of the through hole or a steel needle 9 is provided from one surface side of the glass pedestal 2 in which the small through hole is formed.
Using one of the through holes (the joining surface side of the metal pipe 4)
To form a through-hole 2a, one of which is tapered or curved, and the other of which is a vertical hole.
Here, the tip of the cutting jig or the steel needle 9 is formed in a curved surface or a tapered shape, and in the present embodiment, the cutting jig or the steel needle 9 is placed in the glass pedestal 2 only up to the tip. Do not insert.

In the present embodiment, the metal film 3 is formed after the formation of the through hole 2a. However, the present invention is not limited to this. First, the through hole 2a is formed after the formation of the metal film 3. You may do it.

Therefore, in the present embodiment, the diameter of the through hole 2a on the side of the glass pedestal 2 joined to the semiconductor pressure sensor chip 1 is made smaller than the diameter of the through hole 2a on the other side, and Since the shape of the hole 2a is stepped, the solder 5 can be used even when a thermal stress or a mechanical stress is applied from the outside.
Can be alleviated, and the occurrence of cracks in the glass pedestal 2 can be prevented.

Embodiment 4 = FIG. 7 is a schematic sectional view showing a part of a semiconductor pressure sensor according to another embodiment of the present invention. The semiconductor pressure sensor according to the present embodiment is different from the semiconductor pressure sensor shown in FIGS. 11 and 12 as a conventional example in that the through hole 2a on the bonding surface side of the glass pedestal 2 with the semiconductor pressure sensor chip 1 is formed by the glass pedestal 2
Of the glass pedestal 2 on the side of the bonding surface with the semiconductor pressure sensor chip 1, and the diameter of the through hole 2a on the side of the bonding surface with the semiconductor pressure sensor chip 1 on the other side. The configuration is smaller than the diameter of the hole 2a.

Hereinafter, a method for forming the through hole 2a according to the present embodiment will be described with reference to the drawings. FIG. 8 is a schematic cross-sectional view illustrating a method of forming the through-hole 2a in the glass pedestal 2 according to the present embodiment. In the present embodiment, the steel needle 9 is drilled from the joining side of the glass pedestal 2 with the metal pipe by the ultrasonic processing method, and the tip of the steel needle 9 is formed from the other surface of the glass pedestal 2 ( The pressing of the steel needle 9 is stopped when a part of the curved or tapered portion) protrudes, so that the opening dimension is the same from one surface side of the glass pedestal 2 to the vicinity of the other surface side. The hole is formed in a curved surface or a tapered shape in the vicinity of the other surface side so as to reduce the opening size.

Therefore, in the present embodiment, the through hole 2a on the bonding surface side of the glass pedestal 2 with the semiconductor pressure sensor chip 1 is tapered or formed near the bonding surface side of the glass pedestal 2 with the semiconductor pressure sensor chip 1. Since the diameter of the through-hole 2a on the bonding surface side of the glass pedestal 2 with the semiconductor pressure sensor chip 1 is smaller than the diameter of the through-hole 2a on the other surface side, thermal stress or external stress may be caused. Even if a mechanical stress is applied, the stress applied to the solder 5 can be reduced, and the occurrence of cracks in the glass pedestal 2 can be prevented.

Embodiment 5 = FIG. 9 is a schematic sectional view showing a part of a semiconductor pressure sensor according to another embodiment of the present invention. The semiconductor pressure sensor according to the present embodiment is different from the semiconductor pressure sensor shown in FIGS. 11 and 12 as a conventional example in that a hole having the same opening dimension from the joining side of the glass pedestal 2 to the metal pipe 4 to the vicinity of the other side. The through hole 2a is formed by forming a plurality of holes having a small opening dimension from the side of the glass pedestal 2 where the semiconductor pressure sensor chip 1 is joined and communicating with the hole.

Hereinafter, a process of forming the through hole 2a in the glass pedestal 2 according to the present embodiment will be described with reference to the drawings. First, using an ultrasonic processing method, a drilling process is performed from the joining side of the metal pipe 4 of the glass pedestal 2 using a thick steel needle 10a as a metal needle, and the drilling process is stopped before penetrating the glass pedestal 2. To form a large diameter hole (FIG. 10).
(A)) Next, a plurality of small diameters are communicated from the bonding surface side of the glass pedestal 2 to the metal pipe 4 or the bonding surface side of the semiconductor pressure sensor chip 1 using the thin steel needle 10b as a metal needle so as to communicate with the hole. Is formed to form a through-hole 2a in which the diameter of the glass pedestal 2 on the bonding surface side of the metal pipe 4 is larger than the diameter on the bonding surface side of the semiconductor pressure sensor chip 1 (FIG. 10).
(B)).

Therefore, in the present embodiment, a hole having the same opening size is formed from the joining side of the glass pedestal 2 to the metal pipe 4 to the vicinity of the other side, and the glass pedestal 2 is connected to the semiconductor pressure sensor chip 1 at the joining side. Since the through hole 2a is formed by forming a plurality of holes having a small opening size communicating with the hole from above, the stress applied to the solder 5 can be reduced even if a thermal stress or a mechanical stress is applied from the outside, and the glass The occurrence of cracks in the pedestal 2 can be prevented.

In this embodiment, the ultrasonic machining method is used as a method for forming the small-diameter holes communicating with the large-diameter holes. However, the present invention is not limited to this method. It may be formed.

[0046]

According to the first to eleventh aspects of the present invention,
A semiconductor pressure sensor chip having a diaphragm formed by thinning a part of the semiconductor substrate and having a strain gauge formed on one surface of the diaphragm, and a through-hole communicating with the diaphragm, and joined to the semiconductor pressure sensor chip. A glass pedestal, and a metal member having a pressure introduction hole communicating with the through hole, a metal film is provided on a surface side different from a bonding surface of the glass pedestal with the semiconductor pressure sensor chip, and the metal film and the metal member In the semiconductor pressure sensor which is joined by solder, the shape of the through hole, the diameter of the through hole on the semiconductor pressure sensor chip joining surface side of the glass pedestal, and the diameter of the through hole on the surface side where the metal member of the glass pedestal is joined Since the diameter is smaller than the diameter, the stress applied to the solder can be reduced even if thermal or mechanical stress is applied from the outside. A semiconductor pressure sensor that can prevent occurrence of cracks and does not cause cracks in the glass pedestal even when misalignment occurs during die bonding between the glass pedestal and the metal member, and a method of manufacturing the same. We were able to.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing a part of a semiconductor pressure sensor according to one embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view showing a step of forming a through hole in a glass pedestal according to the embodiment.

FIG. 3 is a schematic sectional view showing a part of a semiconductor pressure sensor according to another embodiment of the present invention.

FIG. 4 is a schematic cross-sectional view showing a step of forming a through hole in a glass pedestal according to the embodiment.

FIG. 5 is a schematic sectional view showing a part of a semiconductor pressure sensor according to another embodiment of the present invention.

FIG. 6 is a schematic cross-sectional view illustrating a method of forming a through hole in a glass pedestal according to the embodiment.

FIG. 7 is a schematic sectional view showing a part of a semiconductor pressure sensor according to another embodiment of the present invention.

FIG. 8 is a schematic cross-sectional view illustrating a method of forming a through hole in a glass pedestal according to the present embodiment.

FIG. 9 is a schematic sectional view showing a part of a semiconductor pressure sensor according to another embodiment of the present invention.

FIG. 10 is a schematic cross-sectional view showing a step of forming a through hole in a glass pedestal according to the embodiment.

FIG. 11 is a schematic sectional view showing a semiconductor pressure sensor according to a conventional example.

FIG. 12 is a schematic sectional view showing a semiconductor pressure sensor according to a conventional example.

FIG. 13 is a schematic cross-sectional view illustrating an operation principle in which cracks occur in a glass pedestal according to a conventional example.

[Explanation of symbols]

 Reference Signs List 1 semiconductor pressure sensor chip 1a diaphragm 2 glass pedestal 2a through hole 3 metal film 4 metal pipe 4a pressure introducing hole 5 solder 6 steel needle 7 ultrasonic machining horn 8a, 8b, 9, 10a, 10b steel needle 11 package 11a recess 12 lead DESCRIPTION OF SYMBOLS 13 Wire 14 Silicon resin 15 Lid 16 Board 17 Borosilicate glass 18 Pin 19 Cap 20 Tensile stress 21 Crack

[Procedure amendment]

[Submission date] October 17, 1997

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Claim 3

[Correction method] Change

[Correction contents]

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Atsushi Ishigami 1048 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Works, Ltd.

Claims (11)

[Claims] 1. A semiconductor pressure sensor chip having a diaphragm formed by thinning a part of a semiconductor substrate and having a strain gauge formed on one surface of the diaphragm, and a through hole communicating with the diaphragm. A glass pedestal joined to the semiconductor pressure sensor chip, and a metal member having a pressure introducing hole communicating with the through-hole, a surface of the glass pedestal different from the joining surface with the semiconductor pressure sensor chip, In a semiconductor pressure sensor in which a metal film is provided and the metal film and the metal member are joined by solder, the shape of the through hole is changed to the shape of the through hole on the semiconductor pressure sensor chip joining surface side of the glass pedestal. A semiconductor pressure sensor, wherein a diameter of the through hole is smaller than a diameter of a through hole of the glass pedestal on the metal member joining surface side. 2. A configuration in which the diameter of the through hole on the side of the glass pedestal on which the semiconductor pressure sensor chip is joined is smaller than the diameter of the through hole on the side of the glass pedestal on which the metal member is joined. 2. The semiconductor pressure sensor according to claim 1, wherein the semiconductor pressure sensor is formed in a tapered or curved shape. 3. A configuration in which the diameter of the through-hole on the side of the glass pedestal on which the semiconductor pressure sensor chip is bonded is smaller than the diameter of the through-hole on the side of the glass pedestal on which the metal member is bonded. 2. The semiconductor acceleration sensor according to claim 1, wherein the semiconductor acceleration sensor has a stepped shape. 4. A configuration in which the diameter of the through hole on the side of the glass pedestal on which the semiconductor pressure sensor chip is bonded is smaller than the diameter of the through hole on the side of the glass pedestal on which the metal member is bonded. 2. The semiconductor pressure sensor according to claim 1, wherein the semiconductor pressure sensor comprises a hole having the same diameter and a hole having a tapered or curved surface. 5. A structure in which the diameter of the through hole on the side of the glass pedestal on which the semiconductor pressure sensor chip is joined is smaller than the diameter of the through hole on the side of the glass member with which the metal member is joined. A first hole formed from the surface of the glass pedestal to which the metal member is bonded to the vicinity of the semiconductor pressure sensor chip bonding surface, and a first hole that is smaller than the first hole communicating with the first hole; 2. The semiconductor pressure sensor according to claim 1, wherein said semiconductor pressure sensor comprises a plurality of second holes having a diameter. 6. The method of manufacturing a semiconductor pressure sensor according to claim 2, wherein the diameter of the through hole on the side of the glass pedestal on which the semiconductor pressure sensor chip is connected is the side of the glass pedestal on the side of the metal member connection side. As a method of making smaller than the diameter of the through hole of, the metal needle is reciprocated by ultrasonic processing,
A semiconductor pressure sensor characterized in that the tip of the metal needle is tapered or curved when the hole is drilled by the vibration, and the tip of the metal needle is located in the glass pedestal. Manufacturing method. 7. The method of manufacturing a semiconductor pressure sensor according to claim 3, wherein the diameter of the through hole on the side of the glass pedestal on which the semiconductor pressure sensor chip is bonded is closer to the side of the glass pedestal on which the metal member is bonded. As a method of making smaller than the diameter of the through hole of, the metal needle is reciprocated by ultrasonic processing,
When performing the drilling process by the vibration, using a plurality of metal needles having different diameters as the metal needle, as the metal pedestal proceeds from the metal member bonding surface side of the glass pedestal to the semiconductor pressure sensor chip bonding surface side, the metal A method of manufacturing a semiconductor pressure sensor, wherein the diameter of a needle is reduced, and the glass pedestal is penetrated by the metal needle having the smallest diameter. 8. The method for manufacturing a semiconductor pressure sensor according to claim 4, wherein the diameter of the through hole on the semiconductor pressure sensor chip bonding surface side of the glass pedestal is on the metal member bonding surface side of the glass pedestal. As a method of making the diameter smaller than the diameter of the through-hole, a through-hole is formed in the glass pedestal, and the vicinity of the metal member joining surface side of the hole, a cutting jig having a diameter larger than the diameter of the hole is used. Wherein the vicinity of the metal member joining surface side of the glass pedestal is tapered or curved. 9. The method for manufacturing a semiconductor pressure sensor according to claim 4, wherein the diameter of the through hole on the side of the glass pedestal on which the semiconductor pressure sensor chip is bonded is closer to the side of the glass pedestal on which the metal member is bonded. As a method of making the diameter smaller than the diameter of the through-hole, the diameter of the through-hole on the semiconductor pressure sensor chip bonding surface side of the glass pedestal is smaller than the diameter of the through-hole on the metal member bonding surface side of the glass pedestal. As a method to do, reciprocate the metal needle by ultrasonic processing method,
When performing the boring process by the vibration, the tip shape of the metal needle is tapered or curved so that the boring process is stopped when a part of the tip portion of the metal needle projects from the glass pedestal. A method for manufacturing a semiconductor pressure sensor, comprising: 10. The method for manufacturing a semiconductor pressure sensor according to claim 5, wherein the diameter of the through hole on the side of the glass pedestal on which the semiconductor pressure sensor chip is connected is the side of the glass pedestal on the side of the metal member connection. As a method of making the diameter smaller than the diameter of the through-hole, when the metal needle is reciprocated by ultrasonic processing, and when the hole is punched by the vibration, the hole is punched from the metal member joining surface side of the glass pedestal. The first hole is formed by stopping the drilling process before penetrating the glass pedestal, and a plurality of second holes communicating with the first hole using a metal needle having a smaller diameter than the metal needle. The method of manufacturing a semiconductor pressure sensor, wherein the holes are formed by an ultrasonic processing method. 11. The method of manufacturing a semiconductor pressure sensor according to claim 5, wherein a diameter of the through hole on the side of the glass pedestal on which the semiconductor pressure sensor chip is bonded is on the side of the glass pedestal on which the metal member is bonded. As a method of making the diameter smaller than the diameter of the through-hole, when the metal needle is reciprocated by ultrasonic processing, and when the hole is punched by the vibration, the hole is punched from the metal member joining surface side of the glass pedestal. Before drilling through the glass pedestal, stop drilling to form a first hole, a second hole having a diameter smaller than the diameter of the first hole, the second hole by sandblasting or etching. A method for manufacturing a semiconductor pressure sensor, wherein the method is formed so as to communicate with one hole.