JP3209155B2 - Semiconductor pressure sensor and method of manufacturing the same - Google Patents
Semiconductor pressure sensor and method of manufacturing the sameInfo
- Publication number
- JP3209155B2 JP3209155B2 JP23411597A JP23411597A JP3209155B2 JP 3209155 B2 JP3209155 B2 JP 3209155B2 JP 23411597 A JP23411597 A JP 23411597A JP 23411597 A JP23411597 A JP 23411597A JP 3209155 B2 JP3209155 B2 JP 3209155B2
- Authority
- JP
- Japan
- Prior art keywords
- hole
- pressure sensor
- semiconductor pressure
- glass pedestal
- diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体圧力センサ
及びその製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor pressure sensor and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】図１１は、従来例に係る半導体圧力セン
サを示す略断面図である。１は半導体圧力センサチップ
であり、単結晶シリコン基板の略中央部が薄肉状に形成
されてダイヤフラム１ａが形成され、ダイヤフラム１ａ
の一面側には圧力変化に応じて抵抗値が変化する歪みゲ
−ジ（図示せず）が形成されている。2. Description of the Related Art FIG. 11 is a schematic sectional view showing a conventional semiconductor pressure sensor. Reference numeral 1 denotes a semiconductor pressure sensor chip, and a diaphragm 1a is formed by forming a substantially central portion of a single-crystal silicon substrate in a thin shape to form a diaphragm 1a.
A strain gage (not shown) whose resistance value changes in accordance with a pressure change is formed on one surface side.
【０００３】２はガラス台座であり、略中央にはダイヤ
フラム１ａに連通する貫通孔２ａが形成され、一方の面
は半導体圧力センサチップ１と陽極接合法等により接合
され、他方の面には金属膜３が形成されている。[0003] Reference numeral 2 denotes a glass pedestal, a through hole 2a communicating with the diaphragm 1a is formed substantially at the center, and one surface is joined to the semiconductor pressure sensor chip 1 by anodic bonding or the like, and the other surface is made of metal. The film 3 is formed.
【０００４】 １１はパッケージであり、リード１２が
一体成型され、半導体圧力センサチップ１を収納するた
めの凹部１１ａを有し、凹部１１ａの底面には略中央に
圧力導入孔４ａを有する金属部材としての金属パイプ４
がパッケージ１１と一体成型されている。そして、金属
パイプ４の凹部１１ａの底面に露出している部分はガラ
ス台座２に接合された半導体圧力センサチップ１をダイ
ボンディングするために平坦に形成されている。[0004] Reference numeral 11 denotes a package, in which a lead 12 is integrally molded, has a concave portion 11a for accommodating the semiconductor pressure sensor chip 1, and has a pressure introducing hole 4a substantially at the center on the bottom surface of the concave portion 11a as a metal member. Metal pipe 4
Are integrally formed with the package 11. The portion of the metal pipe 4 exposed at the bottom of the concave portion 11a is formed flat for die bonding the semiconductor pressure sensor chip 1 bonded to the glass pedestal 2.
【０００５】この半導体圧力センサは、パッケージ１１
の凹部１１ａ底面に露出した金属パイプ４上に、半導体
圧力センサチップ１が接合されたガラス台座２を半田５
（錫，錫−アンチモン合金，鉛，錫−鉛合金，金−シリ
コン合金，錫−銀合金等）によりダイボンディングす
る。このとき、圧力導入孔４ａは貫通孔２ａを介してダ
イヤフラム１ａに連通するように配置されている。そし
て、半導体圧力センサチップ１の電極（図示せず）とリ
ード１２とはワイヤ１３によりワイヤボンディングさ
れ、半導体圧力センサチップ１のガラス台座２との接合
面と異なる面側はシリコン樹脂１４等が塗布されてお
り、パッケージ１１の凹部１１ａ開口端は蓋体１５によ
り塞がれている。[0005] This semiconductor pressure sensor has a package 11
The glass pedestal 2 to which the semiconductor pressure sensor chip 1 is bonded is soldered onto the metal pipe 4 exposed at the bottom of the concave portion 11a.
(Tin, tin-antimony alloy, lead, tin-lead alloy, gold-silicon alloy, tin-silver alloy, etc.). At this time, the pressure introducing hole 4a is arranged so as to communicate with the diaphragm 1a via the through hole 2a. The electrodes (not shown) of the semiconductor pressure sensor chip 1 and the leads 12 are wire-bonded by wires 13, and a silicon resin 14 or the like is applied to a surface of the semiconductor pressure sensor chip 1 that is different from the bonding surface with the glass pedestal 2. The open end of the concave portion 11 a of the package 11 is closed by the lid 15.
【０００６】また、従来例に係る半導体圧力センサの異
なる例を示す。図１２は、従来例に係る半導体圧力セン
サを示す略断面図である。なお、図１１に示す半導体圧
力センサと同一個所には同一符号を付して説明を省略す
る。半導体圧力センサチップ１がガラス台座２を介して
ダイボンディングされた金属パイプ４が、プラスチック
や金属等から成る平板状のボード１６の略中央に設けら
れた貫通孔に挿通され、金属パイプ４の端部においてボ
ード１６とホウケイ酸ガラス１７等により接合されてい
る。また、ボード１６にはピン１８が挿通されており、
ピン１８はホウケイ酸ガラス１７等によりボード１６に
接合されている。Another example of a conventional semiconductor pressure sensor will be described. FIG. 12 is a schematic sectional view showing a semiconductor pressure sensor according to a conventional example. The same parts as those of the semiconductor pressure sensor shown in FIG. A metal pipe 4 to which a semiconductor pressure sensor chip 1 is die-bonded via a glass pedestal 2 is inserted into a through hole provided substantially in the center of a flat board 16 made of plastic, metal, or the like. The board is joined to the board 16 by a borosilicate glass 17 or the like. Also, a pin 18 is inserted through the board 16,
The pins 18 are joined to the board 16 by borosilicate glass 17 or the like.
【０００７】ピン１８と半導体圧力センサチップ１の電
極（図示せず）とはワイヤ１３によりワイヤボンディン
グされ、半導体圧力センサチップ１のガラス台座２との
接合面と異なる面側はシリコン樹脂１４等が塗布されて
いる。The pins 18 and the electrodes (not shown) of the semiconductor pressure sensor chip 1 are wire-bonded by wires 13, and a silicon resin 14 or the like is provided on the surface of the semiconductor pressure sensor chip 1 that is different from the bonding surface with the glass pedestal 2. It has been applied.
【０００８】そして、ボード１６の半導体圧力センサチ
ップ１がダイボンディングされた面側はキャップ１９で
覆われ、キャップ１９とボード１６とは溶接等により接
合されている。The surface of the board 16 on which the semiconductor pressure sensor chip 1 is die-bonded is covered with a cap 19, and the cap 19 and the board 16 are joined by welding or the like.
【０００９】なお、図１１，図１２に示す金属膜３とし
ては、Ｃｒ／Ｎｉ／Ａｕ膜，Ｔｉ／Ｎｉ／Ａｕ膜，Ｔｉ
／Ｐｔ／Ａｕ膜等があり、半田５はＡｕの表面に塗られ
る。The metal film 3 shown in FIGS. 11 and 12 includes a Cr / Ni / Au film, a Ti / Ni / Au film, and a Ti / Ni / Au film.
/ Pt / Au film and the like, and the solder 5 is applied to the surface of Au.
【００１０】[0010]
【発明が解決しようとする課題】ところが、上述のよう
な半導体圧力センサにおいては、図１３に示すように、
ガラス台座２と金属パイプ４とをダイボンディングする
際に、接合位置ずれが発生した場合、半田５に引っ張り
応力２０が加わり、ガラス台座２の開口端近傍にクラッ
ク２１が生じ、半導体圧力センサチップ１が破壊される
という問題があった。However, in the above-described semiconductor pressure sensor, as shown in FIG.
When the bonding position shifts during the die bonding between the glass pedestal 2 and the metal pipe 4, a tensile stress 20 is applied to the solder 5, a crack 21 is generated near the opening end of the glass pedestal 2, and the semiconductor pressure sensor chip 1 Was destroyed.
【００１１】本発明は、上記の点に鑑みて成されたもの
であり、その目的とするところは、ガラス台座と金属部
材とのダイボンディングの際に、位置ずれが生じた場合
にもガラス台座にクラックが生じることのない半導体圧
力センサ及びその製造方法を提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and an object of the present invention is to provide a glass pedestal that can be displaced during die bonding between a glass pedestal and a metal member. Another object of the present invention is to provide a semiconductor pressure sensor and a method for manufacturing the same, which are free from cracks.
【００１２】[0012]
【課題を解決するための手段】請求項１記載の発明は、
半導体基板の一部を薄肉状にしてダイヤフラムを形成
し、該ダイヤフラムの一面側に歪みゲ−ジが形成された
半導体圧力センサチップと、前記ダイヤフラムに連通す
る貫通孔を有し、前記半導体圧力センサチップに接合さ
れたガラス台座と、前記貫通孔に連通する圧力導入孔を
有する金属部材とから成り、前記ガラス台座の前記半導
体圧力センサチップとの接合面と異なる面側には金属膜
が設けられ、前記金属膜と前記金属部材とが半田により
接合されて成る半導体圧力センサにおいて、前記貫通孔
を、前記ガラス台座の前記金属部材が接合される面側か
ら前記半導体圧力センサチップ接合面側近傍まで形成さ
れた第一の孔と、該第一の孔に連通する該第一の孔より
も小さな口径の複数の第二の孔とで構成することによ
り、前記貫通孔の形状を、前記ガラス台座の前記半導体
圧力センサチップ接合面側の前記貫通孔の口径が、前記
ガラス台座の前記金属部材接合面側の貫通孔の口径より
も小さい構成としたことを特徴とするものである。According to the first aspect of the present invention,
A semiconductor pressure sensor chip in which a diaphragm is formed by thinning a part of a semiconductor substrate, and a strain gauge is formed on one surface side of the diaphragm; and a through hole communicating with the diaphragm, the semiconductor pressure sensor comprising: A glass pedestal joined to the chip, and a metal member having a pressure introduction hole communicating with the through hole, a metal film is provided on a surface of the glass pedestal that is different from a joining surface with the semiconductor pressure sensor chip. in the semiconductor pressure sensor comprising said metal film and said metal member is solder-bonded, the through-hole
The side of the glass pedestal to which the metal member is joined
To the vicinity of the semiconductor pressure sensor chip bonding surface side.
From the first hole and the first hole communicating with the first hole.
And a plurality of small holes
Ri, the shape of the through hole, the diameter of the through hole of the semiconductor pressure sensor chip bonding surface side of the glass pedestal has a smaller configuration than the diameter of the through hole of the metallic member joining surface side of the glass pedestal It is characterized by the following.
【００１３】請求項２記載の発明は、半導体基板の一部
を薄肉状にしてダイヤフラムを形成し、該ダイヤフラム
の一面側に歪みゲ−ジが形成された半導体圧力センサチ
ップと、前記ダイヤフラムに連通する貫通孔を有し、前
記半導体圧力センサチップに接合されたガラス台座と、
前記貫通孔に連通する圧力導入孔を有する金属部材とか
ら成り、前記ガラス台座の前記半導体圧力センサチップ
との接合面と異なる面側には金属膜が設けられ、前記金
属膜と前記金属部材とが半田により接合されて成る半導
体圧力センサにおいて、前記貫通孔の形状を、前記ガラ
ス台座の前記半導体圧力センサチップ接合面側の前記貫
通孔の口径が、前記ガラス台座の前記金 属部材接合面側
の貫通孔の口径よりも小さい構成とした半導体圧力セン
サを製造する半導体圧力センサの製造方法であって、超
音波加工法により金属針を往復させ、その振動で孔開け
加工を行う際に、前記金属針の先端形状をテーパ状また
は曲面状にし、前記金属針の先端部分が前記ガラス台座
内に位置するようにしたことを特徴とするものである。According to a second aspect of the present invention, a part of a semiconductor substrate is provided.
Into a thin film to form a diaphragm,
Semiconductor pressure sensor with a strain gage formed on one side
And a through hole communicating with the diaphragm.
A glass pedestal joined to the semiconductor pressure sensor chip,
For example, a metal member having a pressure introduction hole communicating with the through hole
The semiconductor pressure sensor chip of the glass pedestal
A metal film is provided on a surface side different from the bonding surface with
A semiconductor comprising a metal film and the metal member joined by solder
In the body pressure sensor, the shape of the through hole is
The base on the semiconductor pressure sensor chip bonding surface side of the base.
Diameter of the hole is, the metals member joining surface side of the glass pedestal
Semiconductor pressure sensor that is smaller than the diameter of the through hole
A method for manufacturing a semiconductor pressure sensor for manufacturing a semiconductor, comprising:
The metal needle is reciprocated by the ultrasonic processing method, and the vibration creates a hole.
When processing, the tip shape of the metal needle is tapered or
Is curved, and the tip of the metal needle is the glass pedestal.
It is characterized by being located inside .
【００１４】請求項３記載の発明は、半導体基板の一部
を薄肉状にしてダイヤフラムを形成し、該ダイヤフラム
の一面側に歪みゲ−ジが形成された半導体圧力センサチ
ップと、前記ダイヤフラムに連通する貫通孔を有し、前
記半導体圧力センサチップに接合されたガラス台座と、
前記貫通孔に連通する圧力導入孔を有する金属部材とか
ら成り、前記ガラス台座の前記半導体圧力センサチップ
との接合面と異なる面側には金属膜が設けられ、前記金
属膜と前記金属部材とが半田により接合されて成る半導
体圧力センサにおいて、前記貫通孔の形状を、前記ガラ
ス台座の前記半導体圧力センサチップ接合面側の前記貫
通孔の口径が、前記ガラス台座の前記金属部材接合面側
の貫通孔の口径よりも小さい構成とした半導体圧力セン
サを製造する半導体圧力センサの製造方法であって、超
音波加工法により金属針を往復させ、その振動で孔開け
加工を行う際に、前記金属針として径が異なる複数の金
属針を用い、前記ガラス台座の前記金属部材接合面側か
ら前記半導体圧力センサチップ接合面側に進むに従っ
て、前記金属針の径を小さくし、最も小さい径の前記金
属針により前記ガラス台座を貫通させるようにしたこと
を特徴とするものである。According to a third aspect of the present invention, a part of a semiconductor substrate is provided.
Into a thin film to form a diaphragm,
Semiconductor pressure sensor with a strain gage formed on one side
And a through hole communicating with the diaphragm.
A glass pedestal joined to the semiconductor pressure sensor chip,
For example, a metal member having a pressure introduction hole communicating with the through hole
The semiconductor pressure sensor chip of the glass pedestal
A metal film is provided on a surface side different from the bonding surface with
A semiconductor comprising a metal film and the metal member joined by solder
In the body pressure sensor, the shape of the through hole is
The base on the semiconductor pressure sensor chip bonding surface side of the base.
The diameter of the through hole is closer to the metal member bonding surface of the glass pedestal.
Semiconductor pressure sensor that is smaller than the diameter of the through hole
A method for manufacturing a semiconductor pressure sensor for manufacturing a semiconductor, comprising:
The metal needle is reciprocated by the ultrasonic processing method, and the vibration creates a hole.
When performing the processing, a plurality of metal needles having different diameters are used as the metal needles.
Using a metal needle, the glass pedestal on the metal member joint surface side
To the semiconductor pressure sensor chip bonding surface side
To reduce the diameter of the metal needle,
That the glass pedestal is penetrated by a metal needle
It is characterized by the following.
【００１５】請求項４記載の発明は、半導体基板の一部
を薄肉状にしてダイヤフラムを形成し、該ダイヤフラム
の一面側に歪みゲ−ジが形成された半導体圧力センサチ
ップと、前記ダイヤフラムに連通する貫通孔を有し、前
記半導体圧力センサチップに接合されたガラス台座と、
前記貫通孔に連通する圧力導入孔を有する金属部材とか
ら成り、前記ガラス台座の前記半導体圧力センサチップ
との接合面と異なる面側には金属膜が設けられ、前記金
属膜と前記金属部材とが半田により接合されて成る半導
体圧力センサにおいて、前記貫通孔の形状を、前記ガラ
ス台座の前記半 導体圧力センサチップ接合面側の前記貫
通孔の口径が、前記ガラス台座の前記金属部材接合面側
の貫通孔の口径よりも小さい構成とした半導体圧力セン
サを製造する半導体圧力センサの製造方法であって、前
記ガラス台座に、貫通する孔を形成し、該孔の前記金属
部材接合面側近傍を、前記孔の口径よりも大きい径の金
属針を超音波加工法により往復させ、その振動で削り取
ることにより、前記ガラス台座の前記金属部材接合面側
近傍をテーパ状または曲面状にしたことを特徴とするも
のである。According to a fourth aspect of the present invention, a part of a semiconductor substrate is provided.
Into a thin film to form a diaphragm,
Semiconductor pressure sensor with a strain gage formed on one side
And a through hole communicating with the diaphragm.
A glass pedestal joined to the semiconductor pressure sensor chip,
For example, a metal member having a pressure introduction hole communicating with the through hole
The semiconductor pressure sensor chip of the glass pedestal
A metal film is provided on a surface side different from the bonding surface with
A semiconductor comprising a metal film and the metal member joined by solder
In the body pressure sensor, the shape of the through hole is
Wherein the transmembrane semi conductor pressure sensor chip bonding surface side of the scan base
The diameter of the through hole is closer to the metal member bonding surface of the glass pedestal.
Semiconductor pressure sensor that is smaller than the diameter of the through hole
A method for manufacturing a semiconductor pressure sensor for manufacturing a semiconductor pressure sensor, the method comprising:
A penetrating hole is formed in the glass pedestal, and the metal
In the vicinity of the member joining surface side, gold having a diameter larger than the diameter of the hole is used.
The metal needle is reciprocated by ultrasonic processing, and the vibration is used to cut
By doing so, the metal member joining surface side of the glass pedestal
The vicinity is tapered or curved .
【００１６】請求項５記載の発明は、半導体基板の一部
を薄肉状にしてダイヤフラムを形成し、該ダイヤフラム
の一面側に歪みゲ−ジが形成された半導体圧力センサチ
ップと、前記ダイヤフラムに連通する貫通孔を有し、前
記半導体圧力センサチップに接合されたガラス台座と、
前記貫通孔に連通する圧力導入孔を有する金属部材とか
ら成り、前記ガラス台座の前記半導体圧力センサチップ
との接合面と異なる面側には金属膜が設けられ、前記金
属膜と前記金属部材とが半田により接合されて成る半導
体圧力センサにおいて、前記貫通孔の形状を、前記ガラ
ス台座の前記半導体圧力センサチップ接合面側の前記貫
通孔の口径が、前記ガラス台座の前記金属部材接合面側
の貫通孔の口径よりも小さい構成とした半導体圧力セン
サを製造する半導体圧力センサの製造方法であって、超
音波加工法により金属針を往復させ、その振動で孔開け
加工を行う際に、前記金属針の先端形状をテーパ状また
は曲面状にし、前記ガラス台座から前記金属針の先端部
分の一部が突出したときに孔開け加工を止めるようにし
たことを特徴とするものである。According to a fifth aspect of the present invention, a part of a semiconductor substrate is provided.
Into a thin film to form a diaphragm,
Semiconductor pressure sensor with a strain gage formed on one side
And a through hole communicating with the diaphragm.
A glass pedestal joined to the semiconductor pressure sensor chip,
For example, a metal member having a pressure introduction hole communicating with the through hole
The semiconductor pressure sensor chip of the glass pedestal
A metal film is provided on a surface side different from the bonding surface with
A semiconductor comprising a metal film and the metal member joined by solder
In the body pressure sensor, the shape of the through hole is
The base on the semiconductor pressure sensor chip bonding surface side of the base.
The diameter of the through hole is closer to the metal member bonding surface of the glass pedestal.
Semiconductor pressure sensor that is smaller than the diameter of the through hole
A method for manufacturing a semiconductor pressure sensor for manufacturing a semiconductor, comprising:
The metal needle is reciprocated by the ultrasonic processing method, and the vibration creates a hole.
When processing, the tip shape of the metal needle is tapered or
Is curved and the tip of the metal needle is
Stop drilling when part of the minute
It is characterized in that the.
【００１７】請求項６記載の発明は、請求項１記載の半
導体圧力センサの製造方法であって、前記ガラス台座の
前記半導体圧力センサチップ接合面側の前記貫通孔の口
径が、前記ガラス台座の前記金属部材接合面側の貫通孔
の口径よりも小さくする方法として、超音波加工法によ
り金属針を往復させ、その振動で孔開け加工を行う際
に、前記ガラス台座の前記金属部材接合面側から孔開け
加工を行って、前記ガラス台座を貫通する前に孔開け加
工を停止して第一の孔を形成し、前記金属針よりも小さ
い径の金属針を用いて前記第一の孔に連通する複数の第
二の孔を超音波加 工法により形成するようにしたことを
特徴とするものである。According to a sixth aspect of the present invention, a half of the first aspect is provided.
A method for manufacturing a conductor pressure sensor, comprising:
Port of the through hole on the semiconductor pressure sensor chip bonding surface side
Diameter is a through hole on the metal member joining surface side of the glass pedestal
Ultrasonic machining method is used to make the diameter smaller than
When reciprocating a metal needle and drilling holes with the vibration
A hole is formed in the glass pedestal from the metal member joining surface side.
After processing, drill holes before passing through the glass pedestal.
Stop the process to form the first hole, smaller than the metal needle
Using a metal needle having a large diameter, a plurality of
The second hole is characterized in that so as to form by ultrasonic pressing method.
【００１８】請求項７記載の発明は、請求項１記載の半
導体圧力センサの製造方法であって、前記ガラス台座の
前記半導体圧力センサチップ接合面側の前記貫通孔の口
径が、前記ガラス台座の前記金属部材接合面側の貫通孔
の口径よりも小さくする方法として、超音波加工法によ
り金属針を往復させ、その振動で孔開け加工を行う際
に、前記ガラス台座の前記金属部材接合面側から孔開け
加工を行って、前記ガラス台座を貫通する前に孔開け加
工を停止して第一の孔を形成し、前記第一の孔の口径よ
りも小さい口径の第二の孔を、サンドブラスト法または
エッチングにより前記第一の孔に連通するように形成し
たことを特徴とするものである。[0018] The invention described in claim 7 is a half of the invention described in claim 1.
A method for manufacturing a conductor pressure sensor, comprising:
Port of the through hole on the semiconductor pressure sensor chip bonding surface side
Diameter is a through hole on the metal member joining surface side of the glass pedestal
Ultrasonic machining method is used to make the diameter smaller than
When reciprocating a metal needle and drilling holes with the vibration
A hole is formed in the glass pedestal from the metal member joining surface side.
After processing, drill holes before passing through the glass pedestal.
Stop the process to form the first hole and adjust the diameter of the first hole.
The second hole of smaller diameter is sandblasted or
Formed so as to communicate with the first hole by etching
It is characterized in that the.
【００１９】[0019]
【００２０】[0020]
【００２１】[0021]
【００２２】[0022]
【００２３】[0023]
【発明の実施の形態】以下、本発明の実施形態について
図面に基づき説明する。なお、従来例として図１１，図
１２に示す構成と同一の構成については同一符号を付し
て説明を省略する。Embodiments of the present invention will be described below with reference to the drawings. Note that, as a conventional example, the same components as those shown in FIGS. 11 and 12 are denoted by the same reference numerals and description thereof is omitted.
【００２４】＝実施形態１＝ 図１は、本発明の一実施形態に係る半導体圧力センサの
製造方法により製造された半導体圧力センサの一部を示
す略断面図である。この半導体圧力センサは、従来例と
して図１１，図１２に示す半導体圧力センサにおいて、
ガラス台座２の半導体圧力センサチップ１との接合面側
の貫通孔２ａの口径を、他方の面側の貫通孔２ａの口径
よりも小さくして、貫通孔２ａの形状をテーパ状にした
構成である。[0024] = Embodiment 1 = 1, the semiconductor pressure sensor according to an embodiment of the present invention
It is an outline sectional view showing a part of semiconductor pressure sensor manufactured by a manufacturing method . This semiconductor pressure sensor is a conventional semiconductor pressure sensor shown in FIGS.
The diameter of the through hole 2a on the bonding surface side of the glass pedestal 2 with the semiconductor pressure sensor chip 1 is made smaller than the diameter of the through hole 2a on the other surface side, and the shape of the through hole 2a is tapered. is there.
【００２５】なお、本実施形態により製造された半導体
圧力センサにおいては、ガラス台座２の一方の面に形成
された金属膜３として、ガラス台座２表面（以下におい
てこの層を最上層という）にチタン（Ｔｉ），クロム
（Ｃｒ），パラジウム（Ｐｄ），ニッケル（Ｎｉ），白
金（Ｐｔ），タングステン（Ｗ）の内のいずれか１つの
層を形成し、その上（以下においてこの層を中間層とい
う）にＮｉ層を形成し、Ｎｉ層上（以下においてこの層
を最下層という）に金（Ａｕ）層を形成して構成してい
るが、これに限定される必要はなく、半田５が付着する
金属膜３であればよい。The semiconductor manufactured according to the present embodiment is
In the pressure sensor , as a metal film 3 formed on one surface of the glass pedestal 2, titanium (Ti), chromium (Cr), palladium (Pd) is formed on the surface of the glass pedestal 2 (hereinafter, this layer is referred to as an uppermost layer). , Nickel (Ni), platinum (Pt), tungsten (W), a Ni layer is formed thereon (hereinafter, this layer is referred to as an intermediate layer), and a Ni layer is formed on the Ni layer. In the following, this layer is referred to as a lowermost layer) and a gold (Au) layer is formed. However, the present invention is not limited to this, and any metal film 3 to which the solder 5 adheres may be used.
【００２６】以下、テーパ状の貫通孔２ａの形成方法に
ついて図面に基づいて説明する。図２は、ガラス台座２
への貫通孔２ａの形成工程を示す略断面図である。先
ず、ガラス台座２の一方の面側から、超音波加工法によ
り先端形状がテーパ状の金属針としての鋼針６を、先端
がガラス台座２内に位置するように往復移動させ、その
振動によりテーパ状の貫通孔２ａを形成する（図２
（ａ））。Hereinafter, a method for forming the tapered through hole 2a will be described with reference to the drawings. FIG. 2 shows the glass pedestal 2
FIG. 9 is a schematic cross-sectional view showing a step of forming a through hole 2a in the substrate. First, a steel needle 6 as a metal needle having a tapered tip is reciprocated from one surface side of the glass pedestal 2 by ultrasonic processing so that the tip is located in the glass pedestal 2. A tapered through hole 2a is formed (FIG. 2).
(A) ) .
【００２７】最後に、ガラス台座２の貫通孔２ａの口径
の大きい面側に金属膜３をスパッタリングまたは蒸着等
により形成する（図２（ｂ））。なお、本実施形態にお
いては、鋼針６は、ガラス台座２の貫通孔２ａの配置ピ
ッチと等しい間隔で超音波加工ホーン７上に配置されて
いる。Finally, a metal film 3 is formed on the side of the glass pedestal 2 where the through hole 2a has a large diameter by sputtering or vapor deposition (FIG. 2B). In the present embodiment, the steel needles 6 are arranged on the ultrasonic machining horn 7 at intervals equal to the arrangement pitch of the through holes 2 a of the glass pedestal 2.
【００２８】なお、貫通孔２ａの形状をテーパ状にした
半導体圧力センサを製造するにあたって、金属膜３を貫
通孔２ａ形成後に形成するようにしたが、これに限定さ
れる必要はなく、先ず金属膜３を形成した後に貫通孔２
ａを形成するようにしても良い。 The shape of the through hole 2a is tapered.
In manufacturing the semiconductor pressure sensor, the metal film 3 is formed after the formation of the through-hole 2a. However, the present invention is not limited to this.
a may be formed.
【００２９】従って、本実施形態の半導体圧力センサの
製造方法により製造された半導体圧力センサにおいて
は、ガラス台座２の半導体圧力センサチップ１との接合
面側の貫通孔２ａの口径を、他方の面側の貫通孔２ａの
口径よりも小さくして、貫通孔２ａの形状をテーパ状に
したので、外部から熱的ストレスや機械的ストレスが加
わっても半田５に加わる応力を緩和することができ、ガ
ラス台座２へのクラックの発生を防止することができ
る。Therefore, the semiconductor pressure sensor of the present embodiment
In the semiconductor pressure sensor manufactured by the manufacturing method, the diameter of the through hole 2a on the bonding surface side of the glass pedestal 2 with the semiconductor pressure sensor chip 1 is made smaller than the diameter of the through hole 2a on the other surface. Since the shape of the through hole 2a is tapered, the stress applied to the solder 5 can be reduced even when external thermal stress or mechanical stress is applied, and the occurrence of cracks in the glass pedestal 2 can be prevented. it can.
【００３０】＝実施形態２＝ 図３は、本発明の他の実施形態に係る半導体圧力センサ
の製造方法により製造された半導体圧力センサの一部を
示す略断面図である。この半導体圧力センサは、従来例
として図１１，図１２に示す半導体圧力センサにおい
て、ガラス台座２の半導体圧力センサチップ１との接合
面側の貫通孔２ａの口径が、他方の面側の貫通孔２ａの
口径よりも小さくなるように段を有する貫通孔２ａを形
成した構成である。Embodiment 2 = FIG. 3 shows a semiconductor pressure sensor according to another embodiment of the present invention.
FIG. 7 is a schematic cross-sectional view showing a part of a semiconductor pressure sensor manufactured by the manufacturing method of FIG. This semiconductor pressure sensor is different from the conventional semiconductor pressure sensor shown in FIGS. 11 and 12 in that the diameter of the through hole 2a on the bonding surface side of the glass pedestal 2 with the semiconductor pressure sensor chip 1 is equal to the diameter of the through hole on the other surface side. This is a configuration in which a through hole 2a having a step is formed so as to be smaller than the diameter of 2a.
【００３１】なお、本実施形態の半導体圧力センサの製
造方法により製造された半導体圧力センサにおいては、
貫通孔２ａの段数は１段であるが、２段以上あっても良
い。 The semiconductor pressure sensor of the present embodiment is manufactured
In the semiconductor pressure sensor manufactured by the manufacturing method ,
The number of the through holes 2a is one, but may be two or more.
【００３２】以下、階段状の貫通孔２ａの形成方法につ
いて図面に基づいて説明する。図４は、ガラス台座２の
貫通孔２ａの形成工程を示す略断面図である。先ず、ガ
ラス台座２の一方の面側から、超音波加工法により複数
の径の金属針としての鋼針（本実施形態においては鋼針
８ａ，８ｂ）を用い、徐々に径が小さくなるように鋼針
８ａ，８ｂを選択して往復移動させ、その振動で貫通孔
２ａを形成する。このとき、鋼針８ａ，８ｂの口径が小
さくなっていくように変えてガラス台座２に溝を形成し
ていき、最後の鋼針（本実施形態においては鋼針８ｂ）
だけがガラス台座２を貫通するようにする。なお、最後
の鋼針（本実施形態においては鋼針８ｂ）はガラス台座
２のどちらの面から往復移動させても良い。また、本実
施形態においては、鋼針８ａ，８ｂは、ガラス台座２の
貫通孔２ａの配置ピッチと等しい間隔で超音波加工ホー
ン７上に配置されている。 Hereinafter, a method of forming the stepped through hole 2a will be described with reference to the drawings. FIG. 4 is a schematic cross-sectional view illustrating a process of forming the through hole 2a of the glass pedestal 2 . First, steel needles (steel needles 8a and 8b in the present embodiment) as a plurality of diameter metal needles are used from one surface side of the glass pedestal 2 by ultrasonic machining so that the diameter gradually decreases. The steel needles 8a and 8b are selected and reciprocated, and the vibrations form the through holes 2a. At this time, a groove is formed in the glass pedestal 2 by changing the diameter of the steel needles 8a and 8b to be smaller, and the last steel needle (the steel needle 8b in the present embodiment) is formed.
Only penetrate the glass pedestal 2. In addition, the last steel needle (the steel needle 8b in the present embodiment) may be reciprocated from any surface of the glass pedestal 2. In the present embodiment, the steel needles 8a and 8b are arranged on the ultrasonic processing horn 7 at intervals equal to the arrangement pitch of the through holes 2a of the glass pedestal 2.
【００３３】なお、ガラス台座２の半導体圧力センサチ
ップ１との接合面側の貫通孔２ａの口径が他方の面側の
貫通孔２ａの口径よりも小さくなるように段を有する貫
通孔２ａを形成した半導体圧力センサを製造するにあた
って、金属膜３を貫通孔２ａ形成後に形成するようにし
たが、これに限定される必要はなく、先ず金属膜３を形
成した後に貫通孔２ａを形成するようにしても良い。 The semiconductor pressure sensor on the glass pedestal 2
The diameter of the through hole 2a on the joint surface side with the
A through hole having a step smaller than the diameter of the through hole 2a
In manufacturing the semiconductor pressure sensor having the through hole 2a,
Thus, the metal film 3 is formed after the formation of the through hole 2a. However, the present invention is not limited to this. The first formation of the metal film 3 may be followed by the formation of the through hole 2a.
【００３４】従って、本実施形態の半導体圧力センサの
製造方法により製造された半導体圧力センサにおいて
は、ガラス台座２の半導体圧力センサチップ１との接合
面側の貫通孔２ａの口径を、他方の面側の貫通孔２ａの
口径よりも小さくして、貫通孔２ａの形状を階段状にし
たので、外部から熱的ストレスや機械的ストレスが加わ
っても半田５に加わる応力を緩和することができ、ガラ
ス台座２へのクラックの発生を防止することができる。Accordingly, the semiconductor pressure sensor of the present embodiment
In the semiconductor pressure sensor manufactured by the manufacturing method, the diameter of the through hole 2a on the bonding surface side of the glass pedestal 2 with the semiconductor pressure sensor chip 1 is made smaller than the diameter of the through hole 2a on the other surface. Since the shape of the through hole 2a is stepped, the stress applied to the solder 5 can be reduced even when a thermal stress or a mechanical stress is applied from the outside, and the occurrence of cracks in the glass pedestal 2 can be prevented. it can.
【００３５】＝実施形態３＝ 図５は、本発明の他の実施形態に係る半導体圧力センサ
の製造方法により製造された半導体圧力センサの一部を
示す略断面図である。この半導体圧力センサは、従来例
として図１１，図１２に示す半導体圧力センサにおい
て、ガラス台座２の半導体圧力センサチップ１との接合
面側の貫通孔２ａの口径が、他方の面側の貫通孔２ａの
口径よりも小さくなるように、ガラス台座２の金属層３
形成面側からテーパ状または曲面状の孔をガラス台座２
の中途まで形成し、残りの箇所を垂直な孔を形成して貫
通孔２ａを形成した構成である。Embodiment 3 = FIG. 5 shows a semiconductor pressure sensor according to another embodiment of the present invention.
FIG. 7 is a schematic cross-sectional view showing a part of a semiconductor pressure sensor manufactured by the manufacturing method of FIG. This semiconductor pressure sensor is different from the conventional semiconductor pressure sensor shown in FIGS. 11 and 12 in that the diameter of the through hole 2a on the bonding surface side of the glass pedestal 2 with the semiconductor pressure sensor chip 1 is equal to the diameter of the through hole on the other surface side. The metal layer 3 of the glass pedestal 2 is smaller than the diameter of the metal layer 3a.
A tapered or curved hole is formed in the glass pedestal 2 from the forming surface side.
And a through hole 2a is formed by forming a vertical hole in the remaining portion.
【００３６】以下、貫通孔２ａの形成方法について図面
に基づいて説明する。図６は、本実施形態に係るガラス
台座２への貫通孔２ａの形成方法を示す略断面図であ
る。本実施形態においては、小さな貫通孔が形成された
ガラス台座２の一方の面側から前記貫通孔の径よりも大
きい径の鋼針９を用いて、前記貫通孔の一方（金属パイ
プ４接合面側）を削り取ることにより、一方がテーパ状
または曲面状であり、他方が垂直な孔を有する貫通孔２
ａを形成する。ここで、切削治具または鋼針９の先端形
状は、曲面状またはテーパ状に形成されており、本実施
形態においては、切削治具または鋼針９は、先端部分ま
でしかガラス台座２内に挿入しない。 Hereinafter, a method of forming the through hole 2a will be described with reference to the drawings. FIG. 6 is a schematic cross-sectional view illustrating a method of forming a through hole 2a in the glass pedestal 2 according to the present embodiment. In the present embodiment, the diameter is larger than the diameter of the through hole from one surface side of the glass pedestal 2 where the small through hole is formed.
One of the through holes (the joining surface side of the metal pipe 4) is scraped off using a steel needle 9 having a large diameter, whereby one of the through holes 2 is tapered or curved and the other is a vertical hole.
a is formed. Here, the tip of the cutting jig or the steel needle 9 is formed in a curved surface or a tapered shape, and in the present embodiment, the cutting jig or the steel needle 9 is placed in the glass pedestal 2 only up to the tip. Do not insert.
【００３７】なお、ガラス台座２の金属層３形成面側か
らテーパ状または曲面状の孔をガラス台座２の中途まで
形成し、残りの箇所を垂直な孔を形成して貫通孔２ａを
形成 した半導体圧力センサを製造するにあたって、金属
膜３を貫通孔２ａ形成後に形成するようにしたが、これ
に限定される必要はなく、先ず金属膜３を形成した後に
貫通孔２ａを形成するようにしても良い。It should be noted that the glass pedestal 2 may be on the side where the metal layer 3 is formed.
A tapered or curved hole to the middle of the glass pedestal 2.
And a vertical hole is formed in the remaining portion to form a through hole 2a.
In manufacturing the formed semiconductor pressure sensor, the metal film 3 is formed after the formation of the through hole 2a. However, the present invention is not limited to this. For example, the metal film 3 is formed first, and then the through hole 2a is formed. You may do it.
【００３８】従って、本実施形態の半導体圧力センサの
製造方法により製造された半導体圧力センサにおいて
は、ガラス台座２の半導体圧力センサチップ１との接合
面側の貫通孔２ａの口径を、他方の面側の貫通孔２ａの
口径よりも小さくして、貫通孔２ａの形状を階段状にし
たので、外部から熱的ストレスや機械的ストレスが加わ
っても半田５に加わる応力を緩和することができ、ガラ
ス台座２へのクラックの発生を防止することができる。Accordingly, the semiconductor pressure sensor of the present embodiment
In the semiconductor pressure sensor manufactured by the manufacturing method, the diameter of the through hole 2a on the bonding surface side of the glass pedestal 2 with the semiconductor pressure sensor chip 1 is made smaller than the diameter of the through hole 2a on the other surface. Since the shape of the through hole 2a is stepped, the stress applied to the solder 5 can be reduced even when a thermal stress or a mechanical stress is applied from the outside, and the occurrence of cracks in the glass pedestal 2 can be prevented. it can.
【００３９】＝実施形態４＝ 図７は、本発明の他の実施形態に係る半導体圧力センサ
の製造方法により製造された半導体圧力センサの一部を
示す略断面図である。この半導体圧力センサは、従来例
として図１１，図１２に示す半導体圧力センサにおい
て、ガラス台座２の半導体圧力センサチップ１との接合
面側の貫通孔２ａが、ガラス台座２の半導体圧力センサ
チップ１との接合面側近傍でテーパ状または曲面状に
し、かつ、ガラス台座２の半導体圧力センサチップ１と
の接合面側の貫通孔２ａの口径を、他方の面側の貫通孔
２ａの口径よりも小さくした構成である。Embodiment 4 = FIG. 7 shows a semiconductor pressure sensor according to another embodiment of the present invention.
FIG. 7 is a schematic cross-sectional view showing a part of a semiconductor pressure sensor manufactured by the manufacturing method of FIG. This semiconductor pressure sensor is different from the conventional semiconductor pressure sensor shown in FIGS. 11 and 12 in that the through-hole 2a on the bonding surface side of the glass pedestal 2 with the semiconductor pressure sensor chip 1 is connected to the semiconductor pressure sensor chip 1 of the glass pedestal 2. The diameter of the through-hole 2a on the bonding surface side of the glass pedestal 2 with the semiconductor pressure sensor chip 1 is larger than the diameter of the through-hole 2a on the other surface side. The configuration is reduced.
【００４０】以下、貫通孔２ａの形成方法について図面
に基づいて説明する。図８は、ガラス台座２への貫通孔
２ａの形成方法を示す略断面図である。本実施形態にお
いては、超音波加工法により鋼針９を、ガラス台座２に
おける金属パイプとの接合側から孔開け加工をしてい
き、ガラス台座２の他方の面から鋼針９の先端部分（曲
面状またはテーパ状に形成された部分）の一部が突出し
た段階で鋼針９の押し込みを停止することにより、ガラ
ス台座２の一方の面側から他方の面側近傍まで開口寸法
が同一の孔で、前記他方の面側近傍において曲面状また
はテーパ状になって開口寸法が小さくなるような孔を形
成する。 Hereinafter, a method for forming the through hole 2a will be described with reference to the drawings. FIG. 8 is a schematic cross-sectional view showing a method of forming a through hole 2a in the glass pedestal 2 . In the present embodiment, the steel needle 9 is drilled from the joining side of the glass pedestal 2 with the metal pipe by the ultrasonic processing method, and the tip of the steel needle 9 is formed from the other surface of the glass pedestal 2 ( The pressing of the steel needle 9 is stopped when a part of the curved or tapered portion) protrudes, so that the opening dimension is the same from one surface side of the glass pedestal 2 to the vicinity of the other surface side. The hole is formed in a curved surface or a tapered shape in the vicinity of the other surface side so as to reduce the opening size.
【００４１】従って、本実施形態の半導体圧力センサの
製造方法により製造された半導体圧力センサにおいて
は、ガラス台座２の半導体圧力センサチップ１との接合
面側の貫通孔２ａが、ガラス台座２の半導体圧力センサ
チップ１との接合面側近傍でテーパ状または曲面状に
し、かつ、ガラス台座２の半導体圧力センサチップ１と
の接合面側の貫通孔２ａの口径を、他方の面側の貫通孔
２ａの口径よりも小さくしたので、外部から熱的ストレ
スや機械的ストレスが加わっても半田５に加わる応力を
緩和することができ、ガラス台座２へのクラックの発生
を防止することができる。Accordingly, the semiconductor pressure sensor of the present embodiment
In the semiconductor pressure sensor manufactured by the manufacturing method, the through-hole 2a on the bonding surface side of the glass pedestal 2 with the semiconductor pressure sensor chip 1 has a tapered shape near the bonding surface side of the glass pedestal 2 with the semiconductor pressure sensor chip 1. Alternatively, since the diameter of the through hole 2a on the bonding surface side of the glass pedestal 2 with the semiconductor pressure sensor chip 1 is made smaller than the diameter of the through hole 2a on the other surface side, thermal stress from the outside may occur. Even if mechanical stress is applied, the stress applied to the solder 5 can be reduced, and the occurrence of cracks in the glass pedestal 2 can be prevented.
【００４２】＝実施形態５＝ 図９は、本発明の他の実施形態に係る半導体圧力センサ
の製造方法により製造された半導体圧力センサの一部を
示す略断面図である。この半導体圧力センサは、従来例
として図１１，図１２に示す半導体圧力センサにおい
て、ガラス台座２における金属パイプ４との接合側から
他方の側の近傍まで開口寸法が同一の孔が形成され、ガ
ラス台座２の半導体圧力センサチップ１接合側から前記
孔に連通する小さな開口寸法の孔を複数形成して貫通孔
２ａを形成した構成である。Embodiment 5 = FIG. 9 shows a semiconductor pressure sensor according to another embodiment of the present invention.
FIG. 7 is a schematic cross-sectional view showing a part of a semiconductor pressure sensor manufactured by the manufacturing method of FIG. This semiconductor pressure sensor is different from the conventional semiconductor pressure sensor shown in FIGS. 11 and 12 in that a hole having the same opening size is formed from the joining side of the glass pedestal 2 to the metal pipe 4 and the vicinity of the other side. The through hole 2a is formed by forming a plurality of small-sized holes communicating with the holes from the side of the pedestal 2 where the semiconductor pressure sensor chip 1 is joined.
【００４３】以下、ガラス台座２への貫通孔２ａの形成
工程を図面に基づいて説明する。先ず、超音波加工法に
より、金属針としての太い鋼針１０ａを用いて、ガラス
台座２の金属パイプ４接合側から孔開け加工を行い、ガ
ラス台座２を貫通する前に孔開け加工を止めて大きな径
の孔を形成し（図１０（ａ））、次に、ガラス台座２の
金属パイプ４接合面側または半導体圧力センサチップ１
接合面側から金属針としての細い鋼針１０ｂを用いて前
記孔に連通するように複数の小さな径の孔を形成して、
ガラス台座２の金属パイプ４接合面側の径が半導体圧力
センサチップ１接合面側の径よりも大きな貫通孔２ａを
形成する（図１０（ｂ））。 Hereinafter, a process of forming the through hole 2a in the glass pedestal 2 will be described with reference to the drawings. First, by the ultrasonic processing method, using a thick steel needle 10a as a metal needle, drilling is performed from the joining side of the metal pipe 4 of the glass pedestal 2, and the drilling is stopped before penetrating the glass pedestal 2. A hole having a large diameter is formed (FIG. 10 (a)), and then the glass pedestal 2 is connected to the metal pipe 4 or the semiconductor pressure sensor chip 1.
A plurality of small-diameter holes are formed from the joining surface side using a thin steel needle 10b as a metal needle so as to communicate with the hole,
A through-hole 2a is formed in which the diameter of the glass pedestal 2 on the bonding surface side of the metal pipe 4 is larger than the diameter on the bonding surface side of the semiconductor pressure sensor chip 1 (FIG. 10B).
【００４４】従って、本実施形態の半導体圧力センサの
製造方法により製造された半導体圧力センサにおいて
は、ガラス台座２における金属パイプ４との接合側から
他方の側の近傍まで開口寸法が同一の孔が形成され、ガ
ラス台座２の半導体圧力センサチップ１接合側から前記
孔に連通する小さな開口寸法の孔を複数形成して貫通孔
２ａを形成したので、外部から熱的ストレスや機械的ス
トレスが加わっても半田５に加わる応力を緩和すること
ができ、ガラス台座２へのクラックの発生を防止するこ
とができる。Accordingly, the semiconductor pressure sensor of the present embodiment
In the semiconductor pressure sensor manufactured by the manufacturing method, a hole having the same opening size is formed from the joining side of the glass pedestal 2 to the metal pipe 4 to the vicinity of the other side, and the glass pedestal 2 is joined to the semiconductor pressure sensor chip 1. Since a plurality of holes having small opening dimensions communicating with the holes are formed from the side to form the through holes 2a, stress applied to the solder 5 can be reduced even when a thermal stress or a mechanical stress is applied from the outside, The occurrence of cracks in the glass pedestal 2 can be prevented.
【００４５】なお、本実施形態の半導体圧力センサの製
造方法においては、大きな径の孔に連通する小さな径の
孔の形成方法として超音波加工法を用いたが、これに限
定される必要はなく、例えばサンドブラスト法やエッチ
ングにより形成するようにしても良い。It should be noted that the semiconductor pressure sensor of this embodiment is manufactured
Oite the production method, although using ultrasonic processing method as a method of forming a small diameter hole communicating with the hole of larger diameter, need not be limited to this, for example, so as to form by sandblasting or etching May be.
【００４６】[0046]
【発明の効果】請求項１乃至請求項７記載の発明は、半
導体基板の一部を薄肉状にしてダイヤフラムを形成し、
ダイヤフラムの一面に歪みゲ−ジが形成された半導体圧
力センサチップと、ダイヤフラムに連通する貫通孔を有
し、半導体圧力センサチップに接合されたガラス台座
と、貫通孔に連通する圧力導入孔を有する金属部材とか
ら成り、ガラス台座の半導体圧力センサチップとの接合
面と異なる面側には金属膜が設けられ、金属膜と金属部
材とが半田により接合されて成る半導体圧力センサにお
いて、貫通孔の形状を、ガラス台座の半導体圧力センサ
チップ接合面側の貫通孔の口径が、ガラス台座の金属部
材が接合される面側の貫通孔の口径よりも小さくなるよ
うにしたので、外部から熱的ストレスや機械的ストレス
が加わっても半田に加わる応力を緩和することができ、
ガラス台座へのクラックの発生を防止することができ、
ガラス台座と金属部材とのダイボンディングの際に、位
置ずれが生じた場合にもガラス台座にクラックが生じる
ことのない半導体圧力センサ及びその製造方法を提供す
ることができた。According to the first to seventh aspects of the present invention, a diaphragm is formed by thinning a part of a semiconductor substrate.
A semiconductor pressure sensor chip having a strain gage formed on one surface of the diaphragm, a through hole communicating with the diaphragm, a glass pedestal joined to the semiconductor pressure sensor chip, and a pressure introducing hole communicating with the through hole. In a semiconductor pressure sensor comprising a metal member, a metal film is provided on a surface of the glass pedestal that is different from a bonding surface with the semiconductor pressure sensor chip, and the metal film and the metal member are bonded by solder. Since the diameter of the through hole on the side of the glass pedestal where the semiconductor pressure sensor chip is bonded is smaller than the diameter of the through hole on the side where the metal member of the glass pedestal is bonded, external thermal stress And the stress applied to the solder can be reduced even when mechanical stress is applied.
Cracks on the glass pedestal can be prevented,
It is possible to provide a semiconductor pressure sensor in which a crack is not generated in a glass pedestal even when a positional shift occurs during die bonding between a glass pedestal and a metal member, and a method for manufacturing the same.
【図１】本発明の一実施形態に係る半導体圧力センサの
製造方法により製造された半導体圧力センサの一部を示
す略断面図である。[1] of the semiconductor pressure sensor according to an embodiment of the present invention
It is an outline sectional view showing a part of semiconductor pressure sensor manufactured by a manufacturing method .
【図２】本実施形態に係るガラス台座への貫通孔の形成
工程を示す略断面図である。FIG. 2 is a schematic cross-sectional view showing a step of forming a through hole in a glass pedestal according to the embodiment.
【図３】本発明の他の実施形態に係る半導体圧力センサ
の製造方法により製造された半導体圧力センサの一部を
示す略断面図である。FIG. 3 is a semiconductor pressure sensor according to another embodiment of the present invention.
FIG. 7 is a schematic cross-sectional view showing a part of a semiconductor pressure sensor manufactured by the manufacturing method of FIG.
【図４】本実施形態に係るガラス台座への貫通孔の形成
工程を示す略断面図である。FIG. 4 is a schematic cross-sectional view showing a step of forming a through hole in a glass pedestal according to the embodiment.
【図５】本発明の他の実施形態に係る半導体圧力センサ
の製造方法により製造された半導体圧力センサの一部を
示す略断面図である。FIG. 5 is a semiconductor pressure sensor according to another embodiment of the present invention.
FIG. 7 is a schematic cross-sectional view showing a part of a semiconductor pressure sensor manufactured by the manufacturing method of FIG.
【図６】本実施形態に係るガラス台座への貫通孔の形成
方法を示す略断面図である。FIG. 6 is a schematic cross-sectional view illustrating a method of forming a through hole in a glass pedestal according to the embodiment.
【図７】本発明の他の実施形態に係る半導体圧力センサ
の製造方法により製造された半導体圧力センサの一部を
示す略断面図である。FIG. 7 shows a semiconductor pressure sensor according to another embodiment of the present invention.
FIG. 7 is a schematic cross-sectional view showing a part of a semiconductor pressure sensor manufactured by the manufacturing method of FIG.
【図８】本実施形態に係るガラス台座への貫通孔の形成
方法を示す略断面図である。FIG. 8 is a schematic cross-sectional view illustrating a method of forming a through hole in a glass pedestal according to the present embodiment.
【図９】本発明の他の実施形態に係る半導体圧力センサ
の製造方法により製造された半導体圧力センサの一部を
示す略断面図である。FIG. 9 is a semiconductor pressure sensor according to another embodiment of the present invention.
FIG. 7 is a schematic cross-sectional view showing a part of a semiconductor pressure sensor manufactured by the manufacturing method of FIG.
【図１０】本実施形態に係るガラス台座への貫通孔の形
成工程を示す略断面図である。FIG. 10 is a schematic cross-sectional view showing a step of forming a through hole in a glass pedestal according to the embodiment.
【図１１】従来例に係る半導体圧力センサを示す略断面
図である。FIG. 11 is a schematic sectional view showing a semiconductor pressure sensor according to a conventional example.
【図１２】従来例に係る半導体圧力センサを示す略断面
図である。FIG. 12 is a schematic sectional view showing a semiconductor pressure sensor according to a conventional example.
【図１３】従来例に係るガラス台座へのクラックの生じ
る動作原理を示す略断面図である。FIG. 13 is a schematic cross-sectional view illustrating an operation principle in which cracks occur in a glass pedestal according to a conventional example.
１ 半導体圧力センサチップ １ａ ダイヤフラム ２ ガラス台座 ２ａ 貫通孔 ３ 金属膜 ４ 金属パイプ ４ａ 圧力導入孔 ５ 半田 ６ 鋼針 ７ 超音波加工ホーン ８ａ，８ｂ，９，１０ａ，１０ｂ 鋼針 １１ パッケージ １１ａ 凹部 １２ リード １３ ワイヤ １４ シリコン樹脂 １５ 蓋体 １６ ボード １７ ホウケイ酸ガラス １８ ピン １９ キャップ ２０ 引っ張り応力 ２１ クラック Reference Signs List 1 semiconductor pressure sensor chip 1a diaphragm 2 glass pedestal 2a through hole 3 metal film 4 metal pipe 4a pressure introducing hole 5 solder 6 steel needle 7 ultrasonic machining horn 8a, 8b, 9, 10a, 10b steel needle 11 package 11a recess 12 lead DESCRIPTION OF SYMBOLS 13 Wire 14 Silicon resin 15 Lid 16 Board 17 Borosilicate glass 18 Pin 19 Cap 20 Tensile stress 21 Crack
───────────────────────────────────────────────────── フロントページの続き (72)発明者 石上 敦史 大阪府門真市大字門真1048番地松下電工 株式会社内 (56)参考文献 特開 平９−126924（ＪＰ，Ａ) 特開 昭63−147374（ＪＰ，Ａ) 特開 平９−101219（ＪＰ，Ａ) 特開 平１−146647（ＪＰ，Ａ) 実開 昭62−178340（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) G01L 9/04 H01L 29/84 ──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Atsushi Ishigami 1048 Kazuma Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Works, Ltd. (56) References JP-A-9-126924 (JP, A) JP-A-63-147374 ( JP, A) JP-A-9-101219 (JP, A) JP-A-1-146647 (JP, A) JP-A-62-178340 (JP, U) (58) Fields investigated (Int. Cl. 7 , (DB name) G01L 9/04 H01L 29/84
Claims (7)
フラムを形成し、該ダイヤフラムの一面側に歪みゲ−ジ
が形成された半導体圧力センサチップと、前記ダイヤフ
ラムに連通する貫通孔を有し、前記半導体圧力センサチ
ップに接合されたガラス台座と、前記貫通孔に連通する
圧力導入孔を有する金属部材とから成り、前記ガラス台
座の前記半導体圧力センサチップとの接合面と異なる面
側には金属膜が設けられ、前記金属膜と前記金属部材と
が半田により接合されて成る半導体圧力センサにおい
て、前記貫通孔を、前記ガラス台座の前記金属部材が接合さ
れる面側から前記半導体圧力センサチップ接合面側近傍
まで形成された第一の孔と、該第一の孔に連通する該第
一の孔よりも小さな口径の複数の第二の孔とで構成する
ことにより、 前記貫通孔の形状を、前記ガラス台座の前
記半導体圧力センサチップ接合面側の前記貫通孔の口径
が、前記ガラス台座の前記金属部材接合面側の貫通孔の
口径よりも小さい構成としたことを特徴とする半導体圧
力センサ。1. A semiconductor pressure sensor chip having a diaphragm formed by thinning a part of a semiconductor substrate and having a strain gauge formed on one surface of the diaphragm, and a through hole communicating with the diaphragm. A glass pedestal joined to the semiconductor pressure sensor chip, and a metal member having a pressure introducing hole communicating with the through-hole, a surface of the glass pedestal different from the joining surface with the semiconductor pressure sensor chip, In a semiconductor pressure sensor in which a metal film is provided and the metal film and the metal member are joined by solder, the through hole is joined to the metal member of the glass pedestal.
Near the semiconductor pressure sensor chip bonding surface side
A first hole formed up to the first hole and the second hole communicating with the first hole.
Consists of multiple second holes with a smaller diameter than one hole
Thereby, the shape of the through-hole, the diameter of the through-hole on the semiconductor pressure sensor chip bonding surface side of the glass pedestal is smaller than the diameter of the through-hole on the metal member bonding surface side of the glass pedestal. A semiconductor pressure sensor characterized in that:
フラムを形成し、該ダイヤフラムの一面側に歪みゲ−ジ
が形成された半導体圧力センサチップと、前記ダイヤフ
ラムに連通する貫通孔を有し、前記半導体圧力センサチ
ップに接合されたガラス台座と、前記貫通孔に連通する
圧力導入孔を有する金属部材とから成り、前記ガラス台
座の前記半導体圧力センサチップとの接合面と異なる面
側には金属膜が設けられ、前記金属膜と前記金属部材と
が半田により接合されて成る半導体圧力センサにおい
て、前記貫通孔の形状を、前記ガラス台座の前記半導体
圧力センサチップ接合面側の前記貫通孔の口径が、前記
ガラス台座の前記金属部材接合面側の貫通孔の口径より
も小さい構成とした半導体圧力センサを製造する半導体
圧力センサの製造方法であって、超音波加工法により金
属針を往復させ、その振動で孔開け加工を行う際に、前
記金属針の先端形状をテーパ状または曲面状にし、前記
金属針の先端部分が前記ガラス台座内に位置するように
したことを特徴とする半導体圧力センサの製造方法。 2. A method for making a part of a semiconductor substrate thinner,
A diaphragm is formed and a strain gauge is provided on one side of the diaphragm.
A semiconductor pressure sensor chip formed with
A through hole communicating with the ram;
Communicating with the glass pedestal joined to the cap and the through hole
A metal member having a pressure introducing hole;
Surface different from the bonding surface of the seat with the semiconductor pressure sensor chip
A metal film is provided on the side, and the metal film and the metal member
Is a semiconductor pressure sensor that is joined by solder
The shape of the through-hole, the semiconductor of the glass pedestal
The diameter of the through hole on the pressure sensor chip joining surface side is
From the diameter of the through hole on the metal member joint surface side of the glass pedestal
Semiconductors that manufacture semiconductor pressure sensors with a small configuration
This is a method of manufacturing a pressure sensor, which uses an ultrasonic machining method.
When reciprocating the metal needle and making a hole with the vibration,
The tip shape of the metal needle is tapered or curved,
So that the tip of the metal needle is located inside the glass pedestal
A method for manufacturing a semiconductor pressure sensor, comprising:
フラムを形成し、該ダイヤフラムの一面側に歪みゲ−ジ
が形成された半導体圧力センサチップと、前記ダイヤフ
ラムに連通する貫通孔を有し、前記半導体圧力センサチ
ップに接合されたガラス台座と、前記貫通孔に連通する
圧力導入孔を有する金属部材とから成り、前記ガラス台
座の前記半導体圧力センサチップとの接合面と異なる面
側には金属膜が設けられ、前記金属膜と前記金属部材と
が半田により接合されて成る半導体圧力センサにおい
て、前記貫通孔の形状を、前記ガラス台座の前記半導体
圧力センサチップ接合面側の前記貫通孔の口径が、前記
ガラス台座の前記金属部材接合面側の貫通孔の口径より
も小さい構成とした半導体圧力センサを製造する半導体
圧力センサの製造方法であって、超音波加工法により金
属針を往復させ、その振動で孔開け加工を行う際に、前
記金属針として径が異なる複数の金属針を用い、前記ガ
ラス台座の前記金属部材接合面側から前記半導体圧力セ
ンサチップ接合面側に進むに従って、前記金属針の径を
小さくし、最も小さい径の前記金属針により前記ガラス
台座を貫通させるようにしたことを特徴とする半導体圧
力センサの製造方法。 3. A method of making a part of a semiconductor substrate thinner,
A diaphragm is formed and a strain gauge is provided on one side of the diaphragm.
A semiconductor pressure sensor chip formed with
A through hole communicating with the ram;
Communicating with the glass pedestal joined to the cap and the through hole
A metal member having a pressure introducing hole;
Surface different from the bonding surface of the seat with the semiconductor pressure sensor chip
A metal film is provided on the side, and the metal film and the metal member
Is a semiconductor pressure sensor that is joined by solder
The shape of the through-hole, the semiconductor of the glass pedestal
The diameter of the through hole on the pressure sensor chip joining surface side is
From the diameter of the through hole on the metal member joint surface side of the glass pedestal
Semiconductors that manufacture semiconductor pressure sensors with a small configuration
This is a method of manufacturing a pressure sensor, which uses an ultrasonic machining method.
When reciprocating the metal needle and making a hole with the vibration,
A plurality of metal needles having different diameters are used as the metal needles.
The semiconductor pressure cell from the metal member joining surface side of the lath pedestal.
The diameter of the metal needle as
The glass needle with the smallest diameter metal needle
Semiconductor pressure characterized by passing through a pedestal
Manufacturing method of force sensor.
フラムを形成し、該ダイヤフラムの一面側に歪みゲ−ジ
が形成された半導体圧力センサチップと、前記ダイヤフ
ラムに連通する貫通孔を有し、前記半導体圧力センサチ
ップに接合されたガラス台座と、前記貫通孔に連通する
圧力導入孔を有する金属部材とから成り、前記ガラス台
座の前記半導体圧力センサチップとの接合面と異なる面
側には金属膜が設けられ、前記金属膜と前記金属部材と
が半田により接合されて成る半導体圧力センサにおい
て、前記貫通孔の形状を、前記ガラス台座の前記半導体
圧力センサチップ接合面側の前記貫通孔の口径が、前記
ガラス台座の前記金属部材接合面側の貫通孔の口径より
も小さい構成とした半導体圧力センサを製造する半導体
圧力センサの製造方法であって、前記ガラス台座に、貫
通する孔を形成し、該孔の前記金属部材接合面側近傍
を、前記孔の口径よりも大きい径の金属針を超音波加工
法により往復させ、その振動で削り取ることにより、前
記ガラス台座の前記金属部材接合面側近傍をテーパ状ま
たは曲面状にしたことを特徴とする半導体圧力センサの
製造方法。 4. A diamond-shaped part of a semiconductor substrate is made thin.
A diaphragm is formed and a strain gauge is provided on one side of the diaphragm.
A semiconductor pressure sensor chip formed with
A through hole communicating with the ram;
Communicating with the glass pedestal joined to the cap and the through hole
A metal member having a pressure introducing hole;
Surface different from the bonding surface of the seat with the semiconductor pressure sensor chip
A metal film is provided on the side, and the metal film and the metal member
Is a semiconductor pressure sensor that is joined by solder
The shape of the through-hole, the semiconductor of the glass pedestal
The diameter of the through hole on the pressure sensor chip joining surface side is
From the diameter of the through hole on the metal member joint surface side of the glass pedestal
Semiconductors that manufacture semiconductor pressure sensors with a small configuration
A method for manufacturing a pressure sensor, comprising:
A hole through which the metal member is joined, in the vicinity of the metal member joining surface side of the hole.
Ultrasonic processing of a metal needle with a diameter larger than the diameter of the hole
Reciprocating by the method and shaving off by the vibration,
The glass pedestal is tapered in the vicinity of the metal member joint surface.
Or a semiconductor pressure sensor characterized by having a curved surface.
Production method.
フラムを形成し、該ダイヤフラムの一面側に歪みゲ−ジ
が形成された半導体圧力センサチップと、前記ダイヤフ
ラムに連通する貫通孔を有し、前記半導体圧力センサチ
ップに接合されたガラス台座と、前記貫通孔に連通する
圧力導入孔を有する金属部材とから成り、前記ガラス台
座の前記半導体圧力センサチップとの接合面と異なる面
側には金属膜が設けられ、前記金属膜と前記金属部材と
が半田により接合されて成る半導体圧力センサにおい
て、前記貫通孔の形状を、前記ガラス台座の前記半導体
圧力センサチップ接合面側の前記貫通孔の口径が、前記
ガラス台座の前記金属部材接合面側の貫通孔の口径より
も小さい構成とした半導体圧力センサを製造する半導体
圧力センサの製造方法であって、超音波加工法により金
属針を往復させ、その振動で孔開け加工を行う際に、前
記金属針の先端形状をテーパ状または曲面状にし、前記
ガラス台座から前記金属針の先端部分の一部が突出した
ときに孔開け加工を止めるようにしたことを特徴とする
半導体圧力センサの製造方法。 5. A diamond-shaped part of a semiconductor substrate having a small thickness.
A diaphragm is formed and a strain gauge is provided on one side of the diaphragm.
A semiconductor pressure sensor chip formed with
A through hole communicating with the ram;
Communicating with the glass pedestal joined to the cap and the through hole
A metal member having a pressure introducing hole;
Surface different from the bonding surface of the seat with the semiconductor pressure sensor chip
A metal film is provided on the side, and the metal film and the metal member
Is a semiconductor pressure sensor that is joined by solder
The shape of the through-hole, the semiconductor of the glass pedestal
The diameter of the through hole on the pressure sensor chip joining surface side is
From the diameter of the through hole on the metal member joint surface side of the glass pedestal
Semiconductors that manufacture semiconductor pressure sensors with a small configuration
This is a method of manufacturing a pressure sensor, which uses an ultrasonic machining method.
When reciprocating the metal needle and making a hole with the vibration,
The tip shape of the metal needle is tapered or curved,
Part of the tip of the metal needle protruded from the glass pedestal
It is characterized by stopping the drilling process sometimes
Manufacturing method of semiconductor pressure sensor.
方法であって、前記ガラス台座の前記半導体圧力センサ
チップ接合面側の前記貫通孔の口径が、前記ガラス台座
の前記金属部材接合面側の貫通孔の口径よりも小さくす
る方法として、超音波加工法により金属針を往復させ、
その振動で孔開け加工を行う際に、前記ガラス台座の前
記金属部材接合面側から孔開け加工を行って、前記ガラ
ス台座を貫通する前に孔開け加工を停止して第一の孔を
形成し、前記金属針よりも小さい径の金属針を用いて前
記第一の孔に連通する複数の第二の孔を超音波加工法に
より形成するようにしたことを特徴とする半導体圧力セ
ンサの製造方法。6. The manufacture of a semiconductor pressure sensor according to claim 1.
Method, wherein the semiconductor pressure sensor of the glass pedestal
The diameter of the through hole on the chip joining surface side is the glass pedestal.
Smaller than the diameter of the through hole on the metal member joining surface side of
As a method, the metal needle is reciprocated by ultrasonic processing,
When drilling with the vibration,
Drilling from the metal member joint surface side
Before drilling through the base, stop drilling
Formed using a metal needle having a diameter smaller than that of the metal needle.
A plurality of second holes communicating with the first hole are subjected to ultrasonic machining.
A method for manufacturing a semiconductor pressure sensor, characterized in that the semiconductor pressure sensor is formed .
方法であって、前記ガラス台座の前記半導体圧力センサ
チップ接合面側の前記貫通孔の口径が、前記ガラス台座
の前記金属部材接合面側の貫通孔の口径よりも小さくす
る方法として、超音波加工法により金属針を往復させ、
その振動で孔開け加工を行う際に、前記ガラス台座の前
記金属部材接合面側から孔開け加工を行って、前記ガラ
ス台座を貫通する前に孔開け加工を停止して第一の孔を
形成し、前記第一の孔の口径よりも小さい口径の第二の
孔を、サンドブラスト法またはエッチングにより前記第
一の孔に連通するように形成したことを特徴とする半導
体圧力センサの製造方法。 7. Manufacturing of the semiconductor pressure sensor according to claim 1.
Method, wherein the semiconductor pressure sensor of the glass pedestal
The diameter of the through hole on the chip joining surface side is the glass pedestal.
Smaller than the diameter of the through hole on the metal member joining surface side of
As a method, the metal needle is reciprocated by ultrasonic processing,
When drilling with the vibration,
Drilling from the metal member joint surface side
Before drilling through the base, stop drilling
Forming a second aperture of a smaller diameter than the aperture of the first hole
The hole is formed by sandblasting or etching.
A method for manufacturing a semiconductor pressure sensor, wherein the method is formed so as to communicate with one hole .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23411597A JP3209155B2 (en) | 1997-08-29 | 1997-08-29 | Semiconductor pressure sensor and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23411597A JP3209155B2 (en) | 1997-08-29 | 1997-08-29 | Semiconductor pressure sensor and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1172401A JPH1172401A (en) | 1999-03-16 |
| JP3209155B2 true JP3209155B2 (en) | 2001-09-17 |
Family
ID=16965877
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23411597A Expired - Fee Related JP3209155B2 (en) | 1997-08-29 | 1997-08-29 | Semiconductor pressure sensor and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3209155B2 (en) |
-
1997
- 1997-08-29 JP JP23411597A patent/JP3209155B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1172401A (en) | 1999-03-16 |
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