JPH1165107A - Positive type photosensitive resin composition - Google Patents
Positive type photosensitive resin compositionInfo
- Publication number
- JPH1165107A JPH1165107A JP16307698A JP16307698A JPH1165107A JP H1165107 A JPH1165107 A JP H1165107A JP 16307698 A JP16307698 A JP 16307698A JP 16307698 A JP16307698 A JP 16307698A JP H1165107 A JPH1165107 A JP H1165107A
- Authority
- JP
- Japan
- Prior art keywords
- photosensitive resin
- resin composition
- polyamide
- embedded image
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、封止樹脂との密着
性に優れるポジ型感光性樹脂組成物に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a positive photosensitive resin composition having excellent adhesion to a sealing resin.
【0002】[0002]
【従来の技術】従来、半導体素子の表面保護膜、層間絶
縁膜には耐熱性が優れ、又卓越した電気特性、機械的特
性等を有するポリイミド樹脂が用いられているが、近年
半導体素子の高集積化、大型化、封止樹脂パッケージの
薄型化、小型化、半田リフローによる表面実装への移行
等により耐熱サイクル性、耐熱ショック性等の著しい向
上の要求があり、更に高性能のポリイミド樹脂が必要と
されるようになってきた。一方、ポリイミド樹脂自身に
感光性を付与する技術が最近注目を集めてきており、例
えば感光性ポリイミド樹脂として、下記式(3)等があ
る。2. Description of the Related Art Conventionally, a polyimide resin having excellent heat resistance and excellent electrical and mechanical properties has been used for a surface protective film and an interlayer insulating film of a semiconductor element. There is a demand for remarkable improvement in heat cycle resistance and heat shock resistance due to integration, enlargement, thinning and miniaturization of the sealing resin package, transition to surface mounting by solder reflow, etc. It is becoming needed. On the other hand, a technique for imparting photosensitivity to the polyimide resin itself has recently attracted attention. For example, the following formula (3) is given as a photosensitive polyimide resin.
【0003】[0003]
【化6】 Embedded image
【0004】これを用いるとパターン作成工程の一部が
簡略化でき、工程短縮の効果はあるが、現像の際にN−
メチル−2−ピロリドン等の溶剤が必要となるため、安
全、取扱いにおいて問題がある。そこで最近では、アル
カリ水溶液で現像ができるポジ型の感光性樹脂が開発さ
れている。例えば、特公平1−46862号公報におい
てはポリベンゾオキサゾール前駆体とジアゾキノン化合
物より構成されるポジ型感光性樹脂が開示されている。
これは高い耐熱性、優れた電気特性、微細加工性を有
し、ウェハーコート用のみならず層間絶縁用樹脂として
の可能性も有している。このポジ型の感光性樹脂の現像
メカニズムは、未露光部のジアゾキノン化合物がアルカ
リ性水溶液に不溶であり、露光することによりジアゾキ
ノン化合物が化学変化を起こし、アルカリ性水溶液に可
溶となる。この露光部と未露光部での溶解性の差を利用
し、未露光部のみの塗膜パターンの作成が可能となる。When this is used, a part of the pattern forming process can be simplified, which has the effect of shortening the process.
Since a solvent such as methyl-2-pyrrolidone is required, there is a problem in safety and handling. Therefore, recently, a positive photosensitive resin that can be developed with an alkaline aqueous solution has been developed. For example, Japanese Patent Publication No. 1-46862 discloses a positive photosensitive resin composed of a polybenzoxazole precursor and a diazoquinone compound.
It has high heat resistance, excellent electrical properties and fine workability, and has the potential not only as a wafer coat but also as an interlayer insulating resin. The mechanism of development of this positive photosensitive resin is such that the unexposed portion of the diazoquinone compound is insoluble in the alkaline aqueous solution, and the exposure causes the diazoquinone compound to undergo a chemical change and become soluble in the alkaline aqueous solution. By utilizing the difference in solubility between the exposed part and the unexposed part, a coating film pattern can be formed only in the unexposed part.
【0005】これら感光性樹脂を実際の半導体に、ウェ
ハーコート用として用いた場合、ウェハーコート樹脂と
封止樹脂との界面において剥離が発生し、半導体の信頼
性を低下させるという問題がしばしば発生する。その原
因はウェハーコート樹脂と封止樹脂との密着性が低いた
めであり、より封止樹脂との密着性に優れた感光性樹脂
が求められるようになっている。[0005] When these photosensitive resins are used for an actual semiconductor for wafer coating, peeling occurs at the interface between the wafer coating resin and the sealing resin, often causing a problem of lowering the reliability of the semiconductor. . The reason for this is that the adhesion between the wafer coat resin and the sealing resin is low, and a photosensitive resin having more excellent adhesion with the sealing resin has been required.
【0006】[0006]
【発明が解決しようとする課題】本発明は、封止樹脂と
の密着性に優れるポジ型感光性樹脂を提供することを目
的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a positive photosensitive resin having excellent adhesion to a sealing resin.
【0007】[0007]
【課題を解決するための手段】本発明は、一般式(1)
で示されるポリアミド(A)100重量部と感光性ジア
ゾキノン化合物(B)1〜100重量部と一般式(2)
で表わされるフェノール化合物(C)1〜30重量部か
らなることを特徴とするポジ型感光性樹脂組成物であ
る。According to the present invention, there is provided a compound represented by the general formula (1):
And 100 to 100 parts by weight of a photosensitive diazoquinone compound (B) represented by the formula (2):
A positive-type photosensitive resin composition comprising 1 to 30 parts by weight of a phenol compound (C) represented by the formula:
【0008】[0008]
【化7】 Embedded image
【0009】[0009]
【化8】 Embedded image
【0010】(式中、R5 は水素原子またはアルキル基
を表わし、R6 、R7 、R8 、R9 、R10及びR11はそ
れぞれ水素原子、ハロゲン原子、水酸基、アルキル基、
アルコキシ基、シクロアルキル基の内から選ばれた1つ
を示す)(Wherein, R 5 represents a hydrogen atom or an alkyl group, and R 6 , R 7 , R 8 , R 9 , R 10 and R 11 each represent a hydrogen atom, a halogen atom, a hydroxyl group, an alkyl group,
Shows one selected from an alkoxy group and a cycloalkyl group)
【0011】式(1)のポリアミドは、Xの構造を有す
るビスアミノフェノールとYの構造を有するジカルボン
酸からなり、このポリアミドを約300〜400℃で加
熱すると閉環し、ポリベンゾオキサゾールという耐熱性
樹脂に変化する。本発明のポリアミド(1)のXは、例
えば、The polyamide of the formula (1) is composed of bisaminophenol having the structure of X and dicarboxylic acid having the structure of Y. When this polyamide is heated at about 300 to 400 ° C., the ring is closed, and the heat resistance of polybenzoxazole is obtained. Changes to resin. X of the polyamide (1) of the present invention is, for example,
【0012】[0012]
【化9】 Embedded image
【0013】等であるがこれらに限定されるものではな
い。この中で特に好ましいものとしては、However, the present invention is not limited to these. Among them, particularly preferred are:
【0014】[0014]
【化10】 Embedded image
【0015】より選ばれるものである。又式(1)のY
は、例えば、[0015] It is more selected. Also, Y of the formula (1)
Is, for example,
【0016】[0016]
【化11】 Embedded image
【0017】等であるがこれらに限定されるものではな
い。これらの中で特に好ましいものとしては、However, the present invention is not limited to these. Particularly preferred among these are:
【0018】[0018]
【化12】 Embedded image
【0019】より選ばれるものである。更に、式(1)
のZは、例えばIt is more selected. Further, equation (1)
Z is, for example,
【0020】[0020]
【化13】 Embedded image
【0021】等であるがこれらに限定されるものではな
い。式(1)のZは、例えば、シリコンウエハーのよう
な基板に対して、特に密着性が必要な場合に用いるが、
その使用割合bについては最大40.0モル%まで使用
することができる。40.0モル%を越えると樹脂の溶
解性が極めて低下し、スカムが発生し、パターン加工が
できない。なお、これらX、Y、Zの使用にあたって
は、それぞれ1種類であっても2種類以上の混合物であ
っても構わない。However, the present invention is not limited to these. Z in the formula (1) is used, for example, when adhesion is particularly required to a substrate such as a silicon wafer.
About the use ratio b, it can be used up to 40.0 mol%. If it exceeds 40.0 mol%, the solubility of the resin is extremely reduced, scum is generated, and pattern processing cannot be performed. When using X, Y, and Z, one type or a mixture of two or more types may be used.
【0022】本発明で用いる感光性ジアゾキノン化合物
は、1,2−ベンゾキノンジアジドあるいは1,2−ナ
フトキノンジアジド構造を有する化合物であり、米国特
許明細書2,772,972号、第2,797,213
号、第3,669,658号により公知の物質である。
例えば、下記のものが挙げられる。The photosensitive diazoquinone compound used in the present invention is a compound having a 1,2-benzoquinonediazide or 1,2-naphthoquinonediazide structure, and is described in US Pat. Nos. 2,772,972 and 2,797,213.
No. 3,669,658.
For example, the following are mentioned.
【0023】[0023]
【化14】 Embedded image
【0024】[0024]
【化15】 Embedded image
【0025】これらの中で特に好ましいものとしては下
記のものがある。Among these, the following are particularly preferred.
【0026】[0026]
【化16】 Embedded image
【0027】感光性ジアジドキノン化合物(B)のポリ
アミド(A)への配合量は、ポリアミド100重量部に
対し、1〜100重量部で、配合量が1重量部未満だと
樹脂のパターニング性が不良であり、逆に100重量部
を越えるとフイルムの引張り伸び率が著しく低下する。The compounding amount of the photosensitive diazidoquinone compound (B) to the polyamide (A) is 1 to 100 parts by weight based on 100 parts by weight of the polyamide. If the compounding amount is less than 1 part by weight, the patterning property of the resin is poor. On the other hand, if it exceeds 100 parts by weight, the tensile elongation of the film is significantly reduced.
【0028】本発明のポジ型感光性樹脂組成物には、必
要により感光特性を高めるためにジヒドロピリジン誘導
体を加えることができる。ジヒドロピリジン誘導体とし
ては、例えば2,6−ジメチル−3,5−ジアセチル−
4−(2′−ニトロフェニル)−1,4−ジヒドロピリ
ジン、4−(2′−ニトロフェニル)−2,6−ジメチ
ル−3,5−ジカルボエトキシ−1,4−ジヒドロピリ
ジン、4−(2′,4′−ジニトロフエニル)−2,6
−ジメチル−3,5−カルボメトキシ−1,4−ジヒド
ロピリジン等を挙げることができる。A dihydropyridine derivative can be added to the positive photosensitive resin composition of the present invention, if necessary, to enhance the photosensitive characteristics. Examples of the dihydropyridine derivative include 2,6-dimethyl-3,5-diacetyl-
4- (2'-nitrophenyl) -1,4-dihydropyridine, 4- (2'-nitrophenyl) -2,6-dimethyl-3,5-dicarbethoxy-1,4-dihydropyridine, 4- (2 ', 4'-Dinitrophenyl) -2,6
-Dimethyl-3,5-carbomethoxy-1,4-dihydropyridine and the like.
【0029】本発明のポジ型感光性樹脂組成物において
は、更に一般式(2)で表わされるフェノール化合物を
含有させることが重要である。It is important that the positive photosensitive resin composition of the present invention further contains a phenol compound represented by the general formula (2).
【0030】[0030]
【化17】 Embedded image
【0031】(式中、R5 は水素原子またはアルキル基
を表わし、R6 、R7 、R8 、R9 、R10及びR11はそ
れぞれ水素原子、ハロゲン原子、水酸基、アルキル基、
アルコキシ基、シクロアルキル基の内から選ばれた1つ
を示す) 一般式(2)で表わされるフェノール化合物を特公平1
−46862号において示されているポリベンゾオキサ
ゾール前駆体とジアゾキノン化合物より構成されるポジ
型感光性樹脂に加えるとその作用機構は不明であるが封
止樹脂との密着性が向上することを見い出した。本発明
で用いられるフェノール化合物としては、例えば下記の
ものが挙げられるがこれらに限定されない。(Wherein, R 5 represents a hydrogen atom or an alkyl group, and R 6 , R 7 , R 8 , R 9 , R 10 and R 11 each represent a hydrogen atom, a halogen atom, a hydroxyl group, an alkyl group,
(Indicates one selected from an alkoxy group and a cycloalkyl group.) The phenol compound represented by the general formula (2) is
-46862, it has been found that when added to a positive-type photosensitive resin composed of a polybenzoxazole precursor and a diazoquinone compound, the action mechanism is unknown, but the adhesion to the sealing resin is improved. . Examples of the phenol compound used in the present invention include, but are not limited to, the following.
【0032】[0032]
【化18】 Embedded image
【0033】[0033]
【化19】 Embedded image
【0034】[0034]
【化20】 Embedded image
【0035】フェノール化合物(C)の添加量としては
ポリアミド(A)100重量に対して0.1〜30重量
部が好ましい。添加量が0.1重量部未満だと密着性向
上の効果が得られず、又は添加量が30重量を超えると
現像時の膜減りが大きくなり実用性に欠ける。The addition amount of the phenol compound (C) is preferably 0.1 to 30 parts by weight based on 100 parts by weight of the polyamide (A). If the addition amount is less than 0.1 part by weight, the effect of improving the adhesion cannot be obtained, or if the addition amount exceeds 30 parts by weight, the film loss during development becomes large and the practicality is lacking.
【0036】本発明におけるポジ型感光性樹脂組成物に
は、必要によりレベリング剤、シランカップリング剤等
の添加剤を添加することができる。本発明においてはこ
れらの成分を溶剤に溶解し、ワニス状にして使用する。
溶剤としては、N−メチル−2−ピロリドン、γ−ブチ
ロラクトン、N,N−ジメチルアセトアミド、ジメチル
スルホキシド、ジエチレングリコールジメチルエーテ
ル、ジエチレングリコールジエチルエーテル、ジエチレ
ングリコールジブチルエーテル、プロピレングリコール
モノメチルエーテル、ジプロピレングリコールモノメチ
ルエーテル、プロピレングリコールモノメチルエーテル
アセテート、乳酸メチル、乳酸エチル、乳酸ブチル、メ
チル−1,3−ブチレングリコールアセテート、1,3
−ブチレングリコール−3−モノメチルエーテル、ピル
ビン酸メチル、ピルビン酸エチル、メチル−3−メトキ
シプロピオネート等を単独でも混合して用いてもよい。If necessary, additives such as a leveling agent and a silane coupling agent can be added to the positive photosensitive resin composition of the present invention. In the present invention, these components are dissolved in a solvent and used in the form of a varnish.
Examples of the solvent include N-methyl-2-pyrrolidone, γ-butyrolactone, N, N-dimethylacetamide, dimethyl sulfoxide, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, and propylene glycol. Monomethyl ether acetate, methyl lactate, ethyl lactate, butyl lactate, methyl-1,3-butylene glycol acetate, 1,3
-Butylene glycol-3-monomethyl ether, methyl pyruvate, ethyl pyruvate, methyl-3-methoxypropionate and the like may be used alone or in combination.
【0037】本発明のポジ型感光性樹脂組成物の使用方
法は、まず該組成物を適当な支持体、例えば、シリコン
ウエハー、セラミック、アルミ基板等に塗布する。塗布
方法としては、スピンナーを用いた回転塗布、スプレー
コーターを用いた噴霧塗布、浸漬、印刷、ロールコーテ
ィング等がある。次に、60〜120℃でプリベークし
て塗膜を乾燥後、所望のパターン形状に化学線を照射す
る。化学線としては、X線、電子線、紫外線、可視光線
等が使用できるが、200〜500nmの波長のものが
好ましい。次に照射部を現像液で溶解除去することによ
りレリーフパターンを得る。現像液としては、水酸化ナ
トリウム、水酸化カリウム、炭酸ナトリウム、ケイ酸ナ
トリウム、メタケイ酸ナトリウム、アンモニア水等の無
機アルカリ類、エチルアミン、n−プロピルアミン等の
第1アミン類、ジエチルアミン、ジ−n−プロピルアミ
ン等の第2アミン類、トリエチルアミン、メチルジエチ
ルアミン等の第3アミン類、ジメチルエタノールアミ
ン、トリエタノールアミン等のアルコールアミン類、テ
トラメチルアンモニウムヒドロキシド、テトラエチルア
ンモニウムヒドロキシド等の第4級アンモニウム塩等の
アルカリ類の水溶液、及びこれにメタノール、エタノー
ルのごときアルコール類等の水溶性有機溶媒や界面活性
剤を適当量添加した水溶液を好適に使用することができ
る。現像方法としては、スプレー、バドル、浸漬、超音
波等の方式が可能である。次に、現像によって形成した
レリーフパターンをリンスする。リンス液としては、蒸
留水を使用する。次に加熱処理を行い、オキサゾール環
を形成し、耐熱性に富む最終パターンを得る。In the method of using the positive photosensitive resin composition of the present invention, the composition is first applied to a suitable support, for example, a silicon wafer, ceramic, aluminum substrate or the like. Examples of the coating method include spin coating using a spinner, spray coating using a spray coater, dipping, printing, and roll coating. Next, after pre-baking at 60 to 120 ° C. to dry the coating film, a desired pattern shape is irradiated with actinic radiation. As the actinic radiation, X-rays, electron beams, ultraviolet rays, visible rays and the like can be used, but those having a wavelength of 200 to 500 nm are preferable. Next, a relief pattern is obtained by dissolving and removing the irradiated portion with a developer. Examples of the developer include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and aqueous ammonia, primary amines such as ethylamine and n-propylamine, diethylamine, and di-n. -Secondary amines such as propylamine, tertiary amines such as triethylamine and methyldiethylamine, alcohol amines such as dimethylethanolamine and triethanolamine, and quaternary ammoniums such as tetramethylammonium hydroxide and tetraethylammonium hydroxide. An aqueous solution of an alkali such as a salt or an aqueous solution obtained by adding a suitable amount of a water-soluble organic solvent such as an alcohol such as methanol or ethanol or a surfactant thereto can be suitably used. As a developing method, a system such as spray, buddle, immersion, or ultrasonic wave can be used. Next, the relief pattern formed by development is rinsed. Distilled water is used as the rinsing liquid. Next, heat treatment is performed to form an oxazole ring, and a final pattern having high heat resistance is obtained.
【0038】本発明によるポジ型感光性樹脂組成物は、
半導体用途のみならず、多層回路の層間絶縁やフレキシ
ブル銅張板のカバーコート、ソルダーレジスト膜や液晶
配向膜等としても有用である。The positive photosensitive resin composition according to the present invention comprises:
It is useful not only for semiconductors but also for interlayer insulation of multilayer circuits, cover coats of flexible copper clad boards, solder resist films, liquid crystal alignment films, and the like.
【0039】[0039]
【実施例】以下、実施例により本発明を具体的に説明す
る。 <実施例1> *ポリアミドの合成 2,2−ビス(3−アミノ−4−ヒドロキシフェニル)
ヘキサフルオロプロパン36.6重量部(0.100モ
ル)をN,N−ジメチルアセトアミド150重量部及び
ピリジン33.2(0.420モル)重量部に溶解し
た。次にシクロヘキサノン100重量部に溶解したテレ
フタル酸クロリド17.0重量部(0.084モル)と
イソフタル酸クロリド4.3重量部(0.021モル)
を−10〜−15℃で30分かけて滴下し、その後室温
で4時間攪拌し反応を終了した。反応混合物を濾過した
後、溶液を水中に投入し目的の一般式(1)で示され、
Xが下記式X−1、Yが下記式Y−1及びY−2の混合
で、a=100、b=0からなるポリアミド(A1 )を
沈殿させた。沈殿物を濾集し水で充分洗浄した後、真空
下80℃で1昼夜乾燥させた。The present invention will be described below in detail with reference to examples. <Example 1> * Synthesis of polyamide 2,2-bis (3-amino-4-hydroxyphenyl)
36.6 parts (0.100 mol) of hexafluoropropane were dissolved in 150 parts by weight of N, N-dimethylacetamide and 33.2 (0.420 mol) of pyridine. Next, 17.0 parts by weight (0.084 mol) of terephthalic acid chloride and 4.3 parts by weight (0.021 mol) of isophthalic acid chloride dissolved in 100 parts by weight of cyclohexanone were used.
Was added dropwise at −10 to −15 ° C. over 30 minutes, followed by stirring at room temperature for 4 hours to complete the reaction. After the reaction mixture is filtered, the solution is poured into water, and the target is represented by the general formula (1):
X is a mixture of the following formulas X-1 and Y is a mixture of the following formulas Y-1 and Y-2 to precipitate a polyamide (A1) having a = 100 and b = 0. The precipitate was collected by filtration, washed sufficiently with water, and then dried at 80 ° C. under vacuum overnight.
【0040】*ポジ型感光性樹脂組成物の作製 合成したポリアミド(A1 )100重量部、下記式の構
造を有するジアゾキノン(Q1)20重量部、下記式の
構造を有するフェノール化合物(P−1)5重量部をN
−メチル−2−ピロリドン300重量部に溶解した後、
0.2μmのテフロンフィルターで濾過し感光性樹脂組
成物を得た。* Preparation of positive photosensitive resin composition 100 parts by weight of synthesized polyamide (A1), 20 parts by weight of diazoquinone (Q1) having the structure of the following formula, and phenol compound (P-1) having the structure of the following formula 5 parts by weight to N
-Methyl-2-pyrrolidone after dissolving in 300 parts by weight,
The mixture was filtered through a 0.2 μm Teflon filter to obtain a photosensitive resin composition.
【0041】*特性評価 このポジ型感光性樹脂組成物をシリコンウエハー上にス
ピンコーターを用いてと塗布した後、ホットプレート1
20℃で4分乾燥し、膜厚約7μmの塗膜を得た。この
塗膜にg線ステッパー露光機NSR−1505G3A
(ニコン(株)製)によりレチクルを通して50mJ/
cm2 から20mJ/cm2 づつ増やして540mJ/
cm2 まで露光を行った。次に1.40%のテトラメチ
ルアンモニウムヒドロキシド水溶液に80秒浸漬するこ
とによって露光部を溶解除去した後、純水で30秒間リ
ンスした。その結果、露光量200mJ/cm2 の照射
した部分よりパターンが成形されていることが確認でき
た。(感度は200mJ/cm2 )。この時の残膜率
(現像後の膜厚/現像前の膜厚)は83.6%であっ
た。* Characteristic evaluation After coating this positive photosensitive resin composition on a silicon wafer using a spin coater,
After drying at 20 ° C. for 4 minutes, a coating film having a thickness of about 7 μm was obtained. G-line stepper exposure machine NSR-1505G3A
(Manufactured by Nikon Corporation) through a reticle, 50 mJ /
Increase from cm 2 20mJ / cm 2 at a time 540mJ /
Exposure was performed up to cm 2 . Next, the exposed portion was dissolved and removed by immersing it in a 1.40% aqueous solution of tetramethylammonium hydroxide for 80 seconds, and then rinsed with pure water for 30 seconds. As a result, it was confirmed that a pattern was formed from a portion irradiated with an exposure amount of 200 mJ / cm 2 . (The sensitivity is 200 mJ / cm 2 ). At this time, the residual film ratio (film thickness after development / film thickness before development) was 83.6%.
【0042】又、別にポジ型感光性樹脂組成物を同様に
シリコンウエハー上に塗布し、プリベークした後、オー
ブン中30分/150℃、30分/250℃、30分/
350℃の順で加熱、樹脂を硬化させた。更に硬化膜の
上に半導体封止用エポキシ樹脂組成物(住友ベークライ
ト(株)製、EME−6300H)を2×2×2mm
(横×縦×高さ)の大きさに成形した。テンシロンを用
いて、ポリベンゾオキサゾール樹脂硬化膜上に成形した
封止用エポキシ樹脂組成物を引き剥がし、剪断強度を測
定した結果、3.6kg/mm2 であった。Separately, a positive photosensitive resin composition was similarly coated on a silicon wafer and prebaked, and then placed in an oven for 30 minutes / 150 ° C., 30 minutes / 250 ° C., 30 minutes /
The resin was heated in the order of 350 ° C. to cure the resin. Further, an epoxy resin composition for semiconductor encapsulation (manufactured by Sumitomo Bakelite Co., Ltd., EME-6300H) is placed on the cured film at 2 × 2 × 2 mm.
It was formed into a size of (width x height x height). The sealing epoxy resin composition formed on the cured polybenzoxazole resin film was peeled off using Tensilon, and the shear strength was measured. The result was 3.6 kg / mm 2 .
【0043】<実施例2>実施例1におけるフェノール
化合物を下記式P−2に替えて評価を行った。 <実施例3>実施例1におけるフェノール化合物を下記
式P−3に替えて評価を行った。 <実施例4>実施例1におけるフェノール化合物を下記
式P−4に替えて評価を行った。 <実施例5>実施例1におけるフェノール化合物を下記
式P−5に替えて評価を行った。 <実施例6>実施例1におけるフェノール化合物の添加
量を10重量部に増やして評価を行った。<Example 2> The phenol compound in Example 1 was evaluated in place of the following formula P-2. <Example 3> Evaluation was performed by changing the phenol compound in Example 1 to the following formula P-3. <Example 4> Evaluation was performed by changing the phenol compound in Example 1 to the following formula P-4. <Example 5> The evaluation was performed by changing the phenol compound in Example 1 to the following formula P-5. <Example 6> Evaluation was made by increasing the amount of the phenol compound added in Example 1 to 10 parts by weight.
【0044】<実施例7>実施例1におけるポリアミド
の合成において、テレフタル酸クロリド、イソフタル酸
クロリドの替わりにジフェニルエーテル4,4′−ジカ
ルボン酸クロリドに替え、一般式(1)で示され、Xが
下記式X−1、Yが下記式Y−3で、a=100、b=
0からなるポリアミド(A2 )を合成し、その他は実施
例1と同様の評価を行った。<Example 7> In the synthesis of the polyamide in Example 1, diphenyl ether 4,4'-dicarboxylic acid chloride was used instead of terephthalic acid chloride and isophthalic acid chloride. The following formulas X-1 and Y are the following formulas Y-3, a = 100, b =
A polyamide (A2) consisting of 0 was synthesized, and the other components were evaluated in the same manner as in Example 1.
【0045】<実施例8>実施例1におけるポリアミド
の合成において、テレフタル酸クロリド、イソフタル酸
クロリドの替わりにジフェニルエーテル4,4′−ジカ
ルボン酸クロリドを用い、また、2,2−ビス(3−ア
ミノ−4−ヒドロキシフェニル)ヘキサフルオロプロパ
ンの替わりに、3,3′−ジアミノ−4,4′−ジヒド
ロキシジフェニルスルホンを用いて、一般式(1)で示
され、Xが下記式X−2、Yが下記式Y−3で、a=1
00、b=0からなるポリアミド(A3 )の合成をし、
その他は実施例1と同様の評価を行った。Example 8 In the synthesis of the polyamide in Example 1, diphenyl ether 4,4'-dicarboxylic acid chloride was used instead of terephthalic acid chloride and isophthalic acid chloride, and 2,2-bis (3-amino acid chloride) was used. -4-Hydroxyphenyl) hexafluoropropane is replaced by 3,3'-diamino-4,4'-dihydroxydiphenylsulfone, represented by the following general formula (1), and X represents the following formulas X-2 and Y Is the following formula Y-3, and a = 1
A polyamide (A3) consisting of 00 and b = 0 is synthesized,
Otherwise, the same evaluation as in Example 1 was performed.
【0046】<実施例9>実施例1におけるポリアミド
の合成において、テレフタル酸クロリド、イソフタル酸
クロリドの替わりにジフェニルエーテル4,4′−ジカ
ルボン酸クロリドを用い、又2,2−ビス(3−アミノ
−4−ヒドロキシフェニル)ヘキサフルオロプロパンの
替わりに、3,3′−ジアミノ−4,4′−ジヒドロキ
シジフェニルエーテルを用いて、一般式(1)で示さ
れ、Xが下記式X−3、Yが下記式Y−3で、a=10
0、b=0からなるポリアミド(A4 )の合成をし、更
にジアゾキノンとして下記式構造のジアゾキノン(Q
2)を使用し、感光性樹脂組成物を得、その他は実施例
1と同様の評価を行った。Example 9 In the synthesis of polyamide in Example 1, diphenyl ether 4,4'-dicarboxylic acid chloride was used in place of terephthalic acid chloride and isophthalic acid chloride, and 2,2-bis (3-amino- Instead of 4-hydroxyphenyl) hexafluoropropane, 3,3′-diamino-4,4′-dihydroxydiphenyl ether is used and represented by the general formula (1), wherein X is the following formula X-3, and Y is the following In the formula Y-3, a = 10
A polyamide (A4) consisting of 0 and b = 0 was synthesized, and a diazoquinone (Q
2) was used to obtain a photosensitive resin composition, and the other evaluations were performed in the same manner as in Example 1.
【0047】<実施例10>実施例1におけるポリアミ
ドの合成において2,2−ビス(3−アミノ−4−ヒド
ロキシフェニル)ヘキサフルオロプロパンを34.8重
量部(0.095モル)に減らし、替わりに、1,3−
ビス(3−アミノプロピル)−1,1,3,3−テトラ
メチルジシロキサン1.24重量部(0.005モル)
を加え、一般式(1)で示され、Xが下記式X−1、Y
が下記式Y−1及びY−2の混合、Zが下記式Z−1
で、a=95、b=5からなるポリアミド(A5 )の合
成をし、その他は実施例1と同様の評価を行った。Example 10 In the synthesis of the polyamide in Example 1, 2,2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane was reduced to 34.8 parts by weight (0.095 mol) instead. 1,3-
1.24 parts by weight of bis (3-aminopropyl) -1,1,3,3-tetramethyldisiloxane (0.005 mol)
And X is represented by the following formula X-1 and Y
Is a mixture of the following formulas Y-1 and Y-2, and Z is the following formula Z-1
Then, a polyamide (A5) consisting of a = 95 and b = 5 was synthesized, and the other evaluations were the same as in Example 1.
【0048】<比較例1>実施例1におけるフェノール
化合物を添加しないで評価を行った。 <比較例2>実施例7におけるフェノール化合物を添加
しないで評価を行った。 <比較例3>実施例8におけるフェノール化合物を添加
しないで評価を行った。 <比較例4>実施例1におけるフェノール化合物の添加
量を0.05重量部に減らして評価を行った。 <比較例5>実施例1におけるフェノール化合物の添加
量を40重量部に増して評価を行った。以上実施例1〜
8、比較例1〜5の評価結果を表1に示す。<Comparative Example 1> Evaluation was made without adding the phenol compound in Example 1. <Comparative Example 2> Evaluation was made without adding the phenol compound in Example 7. <Comparative Example 3> Evaluation was made without adding the phenol compound in Example 8. <Comparative Example 4> Evaluation was made by reducing the amount of the phenol compound added in Example 1 to 0.05 parts by weight. Comparative Example 5 Evaluation was made by increasing the amount of the phenol compound added in Example 1 to 40 parts by weight. Example 1
8, Table 1 shows the evaluation results of Comparative Examples 1 to 5.
【0049】[0049]
【化21】 Embedded image
【0050】[0050]
【化22】 Embedded image
【0051】[0051]
【化23】 Embedded image
【0052】[0052]
【化24】 Embedded image
【0053】[0053]
【表1】 [Table 1]
【0054】[0054]
【発明の効果】本発明によれば、高感度で高残膜率なパ
ターンが得れ、封止樹脂との密着性に優れるポジ型感光
性樹脂組成物を得ることができる。According to the present invention, a pattern of a high sensitivity and a high residual film ratio can be obtained, and a positive photosensitive resin composition having excellent adhesion to a sealing resin can be obtained.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 FI G03F 7/038 504 G03F 7/038 504 7/075 521 7/075 521 (72)発明者 竹田 直滋 東京都品川区東品川2丁目5番8号 住友 ベークライト株式会社内──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 6 Identification code FI G03F 7/038 504 G03F 7/038 504 7/075 521 7/075 521 (72) Inventor Naoshi Takeda Higashishinagawa, Shinagawa-ku, Tokyo 2-5-8 Sumitomo Bakelite Co., Ltd.
Claims (4)
(A)100重量部と感光性ジアゾキノン化合物(B)
1〜100重量部と一般式(2)で表わされるフェノー
ル化合物(C)1〜30重量部からなることを特徴とす
るポジ型感光性樹脂組成物。 【化1】 【化2】 (式中、R5 は水素原子またはアルキル基を表わし、R
6 、R7 、R8 、R9 、R10およびR11はそれぞれ水素
原子、ハロゲン原子、水酸基、アルキル基、アルコキシ
基、シクロアルキル基の内から選ばれた1つを示す)1. 100 parts by weight of a polyamide (A) represented by the general formula (1) and a photosensitive diazoquinone compound (B)
A positive photosensitive resin composition comprising 1 to 100 parts by weight and 1 to 30 parts by weight of a phenol compound (C) represented by the general formula (2). Embedded image Embedded image (Wherein, R 5 represents a hydrogen atom or an alkyl group;
6 , R 7 , R 8 , R 9 , R 10 and R 11 each represent one selected from a hydrogen atom, a halogen atom, a hydroxyl group, an alkyl group, an alkoxy group and a cycloalkyl group.
が、下記より選ばれてなる請求項1記載のポジ型感光性
樹脂組成物。 【化3】 2. X in the polyamide of the general formula (1)
The positive photosensitive resin composition according to claim 1, wherein is selected from the following. Embedded image
が、下記より選ばれてなる請求項1又は2記載のポジ型
感光性樹脂組成物。 【化4】 3. Y in the polyamide of the general formula (1)
Is selected from the following: The positive photosensitive resin composition according to claim 1 or 2, wherein Embedded image
記より選ばれてなる請求項1、2又は3記載のポジ型感
光性樹脂組成物。 【化5】 4. The positive photosensitive resin composition according to claim 1, wherein the photosensitive diazoquinone compound (B) is selected from the following. Embedded image
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JP16307698A JP3478376B2 (en) | 1997-06-11 | 1998-06-11 | Positive photosensitive resin composition |
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JP15412397 | 1997-06-11 | ||
JP9-154123 | 1997-06-11 | ||
JP16307698A JP3478376B2 (en) | 1997-06-11 | 1998-06-11 | Positive photosensitive resin composition |
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JP2003311947A Division JP2004078231A (en) | 1997-06-11 | 2003-09-03 | Positive type photosensitive resin composition |
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JP2003140340A (en) * | 1998-10-30 | 2003-05-14 | Hitachi Chemical Dupont Microsystems Ltd | Photosensitive polymer composition, method for manufacturing relief pattern, and electronic parts |
EP1953183A2 (en) | 2007-01-31 | 2008-08-06 | Shin-Etsu Chemical Co., Ltd. | Silphenylene-bearing polymer, photo-curable resin composition, patterning process, and substrate circuit protective film |
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JP2009145900A (en) * | 1998-10-30 | 2009-07-02 | Hitachi Chemical Dupont Microsystems Ltd | Photosensitive polymer composition, method for forming relief patterns, and electronic parts |
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