JPH1154545A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPH1154545A JPH1154545A JP20556097A JP20556097A JPH1154545A JP H1154545 A JPH1154545 A JP H1154545A JP 20556097 A JP20556097 A JP 20556097A JP 20556097 A JP20556097 A JP 20556097A JP H1154545 A JPH1154545 A JP H1154545A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor pellet
- semiconductor
- pad electrode
- electrode
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/2901—Shape
- H01L2224/29011—Shape comprising apertures or cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体ペレットに形
成したバンプ電極と配線基板に形成してパッド電極とを
圧接し半導体ペレットと配線基板との間を接着用樹脂で
接着した構造の半導体装置およびその製造方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a structure in which a bump electrode formed on a semiconductor pellet and a pad electrode are formed on a wiring substrate and pressed against a pad electrode to bond the semiconductor pellet and the wiring substrate with an adhesive resin. It relates to the manufacturing method.
【０００２】[0002]
【従来の技術】小型の電子回路装置を実現するためにこ
れに用いられる電子部品も一層の小型化が要求され、例
えば一枚の配線基板に複数の電子部品を組み込みこの配
線基板の単位で高機能化、高性能化の電子部品を構成す
ることにより、個々の電子部品を用いる場合に比較して
大幅な小型化を実現している。このような電子部品の一
例を図４から説明する。図において、１は半導体ペレッ
トで、内部に多数の半導体素子（図示省略）を形成した
半導体基板２の一主面に内部の半導体素子と電気的に接
続された下地電極３を形成し、この下地電極３にバンプ
電極４を形成している。５は配線基板で、樹脂やセラミ
クスなどの絶縁部材からなる絶縁基板６に導電パターン
７を形成し、半導体ペレット１のバンプ電極４と対向す
る位置にパッド電極８を形成している。９は半導体ペレ
ット１のバンプ電極４と配線基板５のパッド電極８とを
対向させ圧接させた状態で、それぞれの対向面間を接着
する接着用樹脂を示す。図示例では、半導体ペレット１
のみを示すが、この半導体ペレット１と関連する半導体
ペレットや他の電子部品を図外領域に配置し、それぞれ
を電気的に接続することにより、例えば半導体ペレット
１としてマイクロプロセッサ用ペレットを用い、メモリ
用ペレット、入出力用ペレットなどを同一配線基板５に
マウントすることにより高機能、高性能の電子回路を高
集積化できる。この種半導体装置の製造方法として、図
５に示すように、予め配線基板５にその表面に形成した
パッド電極８を覆うように接着用樹脂９を塗付してお
き、半導体ペレット１のバンプ電極４を接着用樹脂９に
挿入してバンプ電極４とパッド電極８とを圧着させる方
法、例えば特開昭６０−２６２４３０号公報（先行技術
１）が知られている。半導体ペレット１は図示省略する
が、加熱手段を備えた吸着コレットで供給され加圧と同
時に接着用樹脂９の加熱も行い、電極間を熱圧着すると
ともに加圧状態を一定時間保って樹脂９を硬化させ接着
を完了する。また図６に示すように、予め配線基板５上
に異方性導電膜を有するシート部材１０を配置し、半導
体ペレット１のバンプ電極４をシート部材１０に押し当
ててバンプ電極４とパッド電極８とを圧着させる方法、
例えば特開昭６３−１２２１３３号公報（先行技術２）
が知られている。さらには、図７に示すように半導体ペ
レット１と配線基板５とを対向させてバンプ電極４とパ
ッド電極８とを重合させ加圧して接続した後、シリンジ
１１を用いて半導体ペレット１と配線基板５の隙間から
液状の接着用樹脂９を注入して接着する方法、例えば特
開平８−３３５５９３号公報（先行技術３）が知られて
いる。これらいずれの方法でもおおよそ図４に示す半導
体装置が得られる。2. Description of the Related Art In order to realize a small-sized electronic circuit device, it is necessary to further reduce the size of electronic components used therein. For example, a plurality of electronic components are incorporated in one wiring board, and the height of each wiring board is high. By configuring functionalized and high-performance electronic components, a significant reduction in size is realized as compared with the case where individual electronic components are used. An example of such an electronic component will be described with reference to FIG. In the drawing, reference numeral 1 denotes a semiconductor pellet, on which a base electrode 3 electrically connected to an internal semiconductor element is formed on one main surface of a semiconductor substrate 2 on which a number of semiconductor elements (not shown) are formed. The bump electrode 4 is formed on the electrode 3. Reference numeral 5 denotes a wiring board, on which an electrically conductive pattern 7 is formed on an insulating substrate 6 made of an insulating member such as resin or ceramics, and a pad electrode 8 is formed at a position facing the bump electrode 4 of the semiconductor pellet 1. Reference numeral 9 denotes an adhesive resin for bonding between the opposing surfaces in a state where the bump electrode 4 of the semiconductor pellet 1 and the pad electrode 8 of the wiring substrate 5 are opposed to each other and pressed against each other. In the illustrated example, the semiconductor pellet 1
Although only the semiconductor pellet 1 and other electronic components related to the semiconductor pellet 1 are shown in an area outside the figure and electrically connected to each other, for example, a microprocessor pellet is used as the semiconductor pellet 1 and a memory A high-performance and high-performance electronic circuit can be highly integrated by mounting the input / output pellets and the input / output pellets on the same wiring substrate 5. As a method of manufacturing a semiconductor device of this kind, as shown in FIG. 5, an adhesive resin 9 is applied to a wiring substrate 5 in advance so as to cover a pad electrode 8 formed on the surface of the wiring substrate 5, and a bump electrode of the semiconductor pellet 1 is formed. A method is known in which the bump electrode 4 and the pad electrode 8 are pressure-bonded by inserting the electrode 4 into the bonding resin 9, for example, Japanese Patent Application Laid-Open No. 60-262430 (prior art 1). Although not shown, the semiconductor pellet 1 is supplied by an adsorption collet provided with a heating means, and simultaneously heats the adhesive resin 9 at the same time as the pressurization. Cure to complete bonding. Further, as shown in FIG. 6, a sheet member 10 having an anisotropic conductive film is arranged on a wiring substrate 5 in advance, and the bump electrode 4 of the semiconductor pellet 1 is pressed against the sheet member 10 to form the bump electrode 4 and the pad electrode 8. And how to crimp
For example, JP-A-63-122133 (prior art 2)
It has been known. Further, as shown in FIG. 7, the semiconductor pellet 1 and the wiring board 5 are opposed to each other, and the bump electrode 4 and the pad electrode 8 are polymerized and connected by pressurizing. A method of injecting and bonding a liquid bonding resin 9 through the gap of No. 5, for example, Japanese Patent Application Laid-Open No. 8-335593 (prior art 3) is known. In any of these methods, the semiconductor device shown in FIG. 4 is obtained.
【０００３】[0003]
【発明が解決しようとする課題】ところで、先行技術１
では、圧着された電極４、８間に樹脂が薄い膜の状態で
残留すると、半導体ペレット１の動作・停止にともなう
温度の上昇、降下により熱膨張、収縮し、各電極４、８
の界面から剥離するという問題があった。また先行技術
２では、異方性導電膜を有するシート部材１０を介して
配線基板５のパッド電極８と半導体ペレット１のバンプ
電極４とを対向させ、シート部材１０の対向部を加圧す
ることにより加圧部における母体樹脂中に分散させた導
電性粒子の比率を高め電気的に導通させるもので、各電
極４、８間にはシート部材１０の樹脂が圧縮された状態
で存在している。一方、半導体ペレット１の動作時の温
度上昇が大きい場合には、温度上昇により膨張したシー
ト部材１０が半導体ペレット１を配線基板５から離隔さ
せ、これと同時に電極４、８間の樹脂も膨張して電極間
の電気的接続を損なう虞がある。電極４、８の全対向面
積は半導体ペレットの面積に比して格段に小さいため、
電極４、８の対向面が離隔し、微細な導電性粒子によっ
て局所接続された状態で電極間の断線を確実に防止する
ことができないから、図６に示す製造方法による半導体
装置は発熱量が大きい大電力用半導体装置には不向きで
あった。また、先行技術３による製造方法では、半導体
ペレット１と配線基板５とを電気的に接続した後、液状
接着剤で機械的に接続されるため、先行技術１、２での
課題は生じない。しかしながら、半導体ペレット１と配
線基板５とは数１０μｍの微小間隔であるため、液状接
着剤の注入が煩雑で、内部に気泡が残留し接着剤によっ
て閉じ込められると、この気泡が温度上昇によって膨張
し、半導体ペレット１を局部的に加圧して、半導体ペレ
ット１内部の半導体素子の動作状態を変化させたり、膨
張、収縮の繰り返しにより半導体ペレット１を疲労破壊
さる虞があり、半導体ペレット１と配線基板５の間に残
留した気泡が外部と連通していると、外部の腐食性ガス
が半導体ペレット１表面に形成された配線層等を腐食し
比較的短時間で不良となるという問題もあった。また、
液状樹脂が不所望部分に拡がらないように半硬化するま
で水平状態を保つ必要があり、硬化も時間を要すという
問題があった。However, prior art 1
Then, when the resin remains in a thin film state between the crimped electrodes 4 and 8, the resin expands and contracts due to a rise and fall in temperature due to the operation / stop of the semiconductor pellet 1.
There was a problem of peeling off from the interface of. In the prior art 2, the pad electrode 8 of the wiring board 5 and the bump electrode 4 of the semiconductor pellet 1 are opposed to each other via the sheet member 10 having the anisotropic conductive film, and the opposed portion of the sheet member 10 is pressed. The ratio of the conductive particles dispersed in the base resin in the pressurizing portion is increased so as to electrically conduct, and the resin of the sheet member 10 exists between the electrodes 4 and 8 in a compressed state. On the other hand, when the temperature rise during operation of the semiconductor pellet 1 is large, the sheet member 10 expanded due to the temperature rise separates the semiconductor pellet 1 from the wiring board 5, and at the same time, the resin between the electrodes 4 and 8 also expands. Therefore, the electrical connection between the electrodes may be impaired. Since the total facing area of the electrodes 4 and 8 is much smaller than the area of the semiconductor pellet,
Since the opposing surfaces of the electrodes 4 and 8 are separated from each other and disconnection between the electrodes cannot be reliably prevented in a state where the electrodes are locally connected by fine conductive particles, the semiconductor device according to the manufacturing method shown in FIG. It is not suitable for large high power semiconductor devices. In the manufacturing method according to Prior Art 3, since the semiconductor pellet 1 and the wiring board 5 are electrically connected and then mechanically connected with a liquid adhesive, the problems in Prior Art 1 and 2 do not occur. However, since the semiconductor pellet 1 and the wiring substrate 5 have a minute interval of several tens of μm, the injection of the liquid adhesive is complicated, and if air bubbles remain inside and are trapped by the adhesive, the air bubbles expand due to a rise in temperature. When the semiconductor pellet 1 is locally pressurized, the operating state of the semiconductor element inside the semiconductor pellet 1 may be changed, or the semiconductor pellet 1 may be fatigued and broken by repeated expansion and contraction. If the bubbles remaining between the cells 5 communicate with the outside, there is also a problem that an external corrosive gas corrodes a wiring layer or the like formed on the surface of the semiconductor pellet 1 and becomes defective in a relatively short time. Also,
It is necessary to maintain a horizontal state until the liquid resin is semi-cured so as not to spread to an undesired portion, and there has been a problem that curing requires time.
【０００４】[0004]
【課題を解決するための手段】本発明は上記課題の解決
を目的として提案されたもので、半導体ペレットに形成
したバンプ電極と配線基板に形成したパッド電極とを対
向させて重合させ、加熱、加圧して電気的に接続すると
ともに半導体ペレットと配線基板の対向面間を半導体ペ
レットの加熱温度で表面が熱変形する熱硬化性樹脂から
なる接着用樹脂で接着したことを特徴とする半導体装置
を提供する。また、本発明は上記半導体装置を製造する
方法としてバンプ電極を有する半導体ペレットと、半導
体ペレットのバンプ電極と対応してパッド電極を形成し
かつパッド電極で囲まれる領域内に熱硬化性樹脂からな
る接着用樹脂層を形成した配線基板とを、バンプ電極と
パッド電極とが重合するように対向させ、少なくとも半
導体ペレットを加熱しつつ対向面を相対的に近接させ、
半導体ペレットを接着用樹脂層に接触させてその表面を
加熱し軟化させて接着用樹脂層に密着させ、半導体ペレ
ットの加熱、加圧状態を保って、バンプ電極とパッド電
極とを熱圧着するとともに、加熱された半導体ペレット
を接触させて熱変形させた接着用樹脂層を半導体ペレッ
トの裏面に密着させ、半導体ペレットと配線基板とを接
着するようにしたことを特徴とする半導体装置の製造方
法を提供する。SUMMARY OF THE INVENTION The present invention has been proposed for the purpose of solving the above-mentioned problems. A bump electrode formed on a semiconductor pellet and a pad electrode formed on a wiring board are opposed to each other and polymerized. The semiconductor device is characterized in that the semiconductor device is characterized in that it is electrically connected by pressurization, and the semiconductor pellet and the opposing surface of the wiring substrate are bonded with an adhesive resin made of a thermosetting resin whose surface is thermally deformed at the heating temperature of the semiconductor pellet. provide. The present invention also provides a method for manufacturing the above-described semiconductor device, comprising a semiconductor pellet having a bump electrode, a pad electrode corresponding to the bump electrode of the semiconductor pellet, and a thermosetting resin in a region surrounded by the pad electrode. The wiring substrate on which the adhesive resin layer is formed is opposed so that the bump electrode and the pad electrode are superimposed, and at least the semiconductor pellet is heated and the opposed surfaces are relatively brought close to each other,
The semiconductor pellet is brought into contact with the adhesive resin layer, the surface thereof is heated and softened to adhere to the adhesive resin layer, and the semiconductor pellet is heated and pressed, and the bump electrode and the pad electrode are thermocompressed. A method for manufacturing a semiconductor device, comprising: adhering a heat-deformed adhesive resin layer by contacting a heated semiconductor pellet to a back surface of the semiconductor pellet to bond the semiconductor pellet to a wiring board. provide.
【０００５】[0005]
【発明の実施の形態】本発明による半導体装置は、半導
体ペレットと、予め半導体ペレットの加熱温度で表面が
軟化する熱硬化性樹脂を用いた接着用樹脂を塗付した配
線基板とを対向させ、それぞれの対向面に形成したバン
プ電極とパッド電極とを重合させて加熱、加圧し電気的
に接続するとともに加熱された半導体ペレットの接触に
より軟化した接着用樹脂にて半導体ペレットを接着した
ことを特徴とするが、熱硬化性樹脂としてエポキシ系樹
脂を用いることができる。また、本発明による半導体装
置の製造方法は、バンプ電極を有する半導体ペレット
と、半導体ペレットのバンプ電極と対応してパッド電極
を形成しかつパッド電極で囲まれる領域内に予め熱硬化
性樹脂からなる接着用樹脂層を形成した配線基板とを、
バンプ電極とパッド電極とが重合するように対向させ、
少なくとも半導体ペレットを加熱しつつ対向面を相対的
に近接させ、半導体ペレットを接着用樹脂層に接触させ
てその表面を加熱し軟化させて接着用樹脂層に密着さ
せ、半導体ペレットの加熱、加圧状態を保って、バンプ
電極とパッド電極とを熱圧着するとともに、軟化させた
接着用樹脂層を半導体ペレットの周縁に押し広げ、半導
体ペレットの全面を配線基板に接着するようにしたこと
を特徴とするが、可撓性を有する絶縁部材よりなる配線
基板をパッド電極で囲まれる領域の中央部が突出するよ
うに支持することにより、半導体ペレットのバンプ電極
をパッド電極に押圧する際に半導体ペレットの下面中央
部から周縁部に向かって順次接着用樹脂を接着させるこ
ともできる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In a semiconductor device according to the present invention, a semiconductor pellet is opposed to a wiring substrate which has been coated with an adhesive resin using a thermosetting resin whose surface is softened at a heating temperature of the semiconductor pellet. The bump electrode and the pad electrode formed on each opposing surface are polymerized and heated and pressed to electrically connect them, and the semiconductor pellets are bonded with an adhesive resin softened by the contact of the heated semiconductor pellets. However, an epoxy resin can be used as the thermosetting resin. Further, the method of manufacturing a semiconductor device according to the present invention comprises a semiconductor pellet having a bump electrode, a pad electrode formed corresponding to the bump electrode of the semiconductor pellet, and a thermosetting resin previously formed in a region surrounded by the pad electrode. A wiring board on which an adhesive resin layer is formed,
The bump electrode and the pad electrode face each other so as to overlap,
At least the facing surfaces are relatively close to each other while heating the semiconductor pellets, the semiconductor pellets are brought into contact with the bonding resin layer, and the surface is heated and softened to adhere to the bonding resin layer, and the semiconductor pellet is heated and pressed. While maintaining the state, the bump electrode and the pad electrode are thermocompression-bonded, and the softened adhesive resin layer is spread over the periphery of the semiconductor pellet, so that the entire surface of the semiconductor pellet is bonded to the wiring board. However, by supporting the wiring substrate made of a flexible insulating member so that the central portion of the region surrounded by the pad electrode protrudes, the semiconductor pellet is pressed when the bump electrode of the semiconductor pellet is pressed against the pad electrode. Adhesive resin can also be sequentially adhered from the lower surface center to the peripheral edge.
【０００６】[0006]
【実施例】以下に本発明の実施例を図１から説明する。
図において、図４半導体装置と同一物には同一符号を付
し重複する説明を省略する。本発明による半導体装置が
図４半導体装置と相違するのは、半導体ペレット１と配
線基板５とを接着した接着用樹脂１２のみで、この接着
用樹脂１２は図２に示すように予めスクリーン印刷法に
よりエポキシ樹脂をベースとする熱硬化性の接着剤を配
線基板５のパッド電極８で囲まれる領域内に一定の厚み
の層状に形成して硬化させたものを用い、半導体ペレッ
ト１を、そのバンプ電極４をパッド電極８と対向させ図
示省略するが加熱手段を備えた吸着コレットで各電極
４、８の重合部を加圧するとともに半導体ペレット１の
下面と接触した接着用樹脂１２の表面を加熱する。熱硬
化性樹脂の場合、一旦硬化した樹脂は可塑化しないが、
２００℃程度の温度を加えると加圧された状態で熱変形
する。本発明による半導体装置はこの性質を利用して電
極の熱圧着と同時に、一度硬化した接着用樹脂１２を熱
変形させて、この変形層１２ａを半導体ペレット１の裏
面に密着させて、半導体ペレット１と配線基板５とを接
着するもので、熱変形した樹脂は加熱の停止とともに直
ちに硬化状態に戻るため極めて短時間で接着を完了でき
る。この半導体装置はバンプ電極とパッド電極を直接衝
合させて熱圧着できるため、重合部に樹脂が入り込ま
ず、電極重合部を強固に接着でき、発熱量が大きい半導
体装置にも適用できる。接着用樹脂層の厚みは、熱圧着
が完了した状態でのバンプ電極の高さとパッド電極の厚
みの和より大きく設定すればよく、熱変形した樹脂が半
導体ペレット１の周縁より０．５ｍｍ程度はみ出すよう
に予め配線基板５に形成される接着用樹脂層１２の厚み
が決定される。また、半導体ペレット１を接着用樹脂層
１２に押し当てる際に、配線基板５の絶縁基板６として
可撓性を有する部材を用い、図３に示すように配線基板
５を支持する支持テーブル１３にパッド電極８で囲まれ
る領域の中央部を突出させるように突起１４を設け、半
導体ペレット１のバンプ電極４をパッド電極８に押圧す
る際に半導体ペレット１の下面中央部から周縁部に向か
って順次接着用樹脂１２を接着させることもできる。こ
の突起１４は半導体ペレット１と配線基板５の対向間隔
の１／１０乃至１／５程度でよく、凸球面状、四角錐状
などの形状が可能である。このようにして製造された半
導体装置は、接着用樹脂１２の中央部から周縁部に順次
半導体ペレット１が接触し可撓性を有する絶縁基板６が
変形して半導体ペレット１に配線基板５を倣わせるため
気泡の閉じ込めを完全に防止できる。また、図３実施例
では、突起１４を支持テーブル１３に固定したが、支持
テーブル１３の上面より突出退入可能に配置することも
できる。この場合には、突起１４は上面が平坦でも良
く、接着用樹脂１２の厚みも、バンプ電極４とパッド電
極８の高さの和より低く形成することもできる。尚、本
発明は上記実施例にのみ限定されるものではなく、例え
ば、接着用樹脂１２は上面を平坦に形成しその全面を半
導体ペレット１の裏面に密着させるだけでなく、表面に
平行状または格子状の微細溝を形成し、短冊状または島
状の表面を半導体ペレット１と密着させても良い。ま
た、液状の熱硬化性樹脂系接着剤を併用することもでき
る。これにより、接着用樹脂１２の外周に液状接着剤を
拡げることができ、電極部を含む半導体ペレット１外周
領域まで完全に封止できる。この場合、液状接着剤の使
用量が極めてわずかで済み、半導体ペレット１と接着用
樹脂１２の間の液状樹脂は極めて薄いため短時間で硬化
させ接着させることができる。FIG. 1 shows an embodiment of the present invention.
In the figure, the same components as those of the semiconductor device of FIG. 4 are denoted by the same reference numerals, and redundant description is omitted. The only difference between the semiconductor device according to the present invention and the semiconductor device shown in FIG. 4 is a bonding resin 12 for bonding the semiconductor pellet 1 and the wiring board 5, and the bonding resin 12 is formed by a screen printing method as shown in FIG. A thermosetting adhesive based on an epoxy resin is formed into a layer having a predetermined thickness in a region surrounded by the pad electrodes 8 of the wiring board 5 and cured, and the semiconductor pellet 1 is used as the bump. The electrode 4 is opposed to the pad electrode 8, and although not shown, the overlapping portion of each electrode 4, 8 is pressurized by an adsorption collet provided with a heating means, and the surface of the bonding resin 12 in contact with the lower surface of the semiconductor pellet 1 is heated. . In the case of thermosetting resin, once cured resin does not plasticize,
When a temperature of about 200 ° C. is applied, it is thermally deformed in a pressurized state. The semiconductor device according to the present invention makes use of this property by thermally deforming the once cured adhesive resin 12 at the same time as the thermocompression bonding of the electrodes, and bringing the deformed layer 12a into close contact with the back surface of the semiconductor pellet 1 to thereby form the semiconductor pellet 1 And the wiring substrate 5, and the thermally deformed resin immediately returns to a hardened state when the heating is stopped, so that the bonding can be completed in an extremely short time. In this semiconductor device, since the bump electrode and the pad electrode can be directly pressed against each other and thermocompression-bonded, no resin enters the overlapped portion, the electrode overlapped portion can be firmly bonded, and the present invention can be applied to a semiconductor device having a large heat generation. The thickness of the adhesive resin layer may be set to be larger than the sum of the height of the bump electrode and the thickness of the pad electrode in a state where the thermocompression bonding is completed, and the thermally deformed resin protrudes from the periphery of the semiconductor pellet 1 by about 0.5 mm. Thus, the thickness of the bonding resin layer 12 formed on the wiring board 5 is determined in advance. When the semiconductor pellet 1 is pressed against the adhesive resin layer 12, a flexible member is used as the insulating substrate 6 of the wiring substrate 5, and the semiconductor pellet 1 is placed on a support table 13 that supports the wiring substrate 5 as shown in FIG. Protrusions 14 are provided so as to protrude from the center of the region surrounded by the pad electrode 8, and when the bump electrodes 4 of the semiconductor pellet 1 are pressed against the pad electrodes 8, the semiconductor pellet 1 is sequentially moved from the lower center to the peripheral edge. The bonding resin 12 can also be bonded. The protrusion 14 may be about 1/10 to 1/5 of the distance between the semiconductor pellet 1 and the wiring substrate 5 and can have a shape such as a convex spherical surface or a quadrangular pyramid. In the semiconductor device manufactured as described above, the semiconductor pellet 1 comes into contact with the bonding resin 12 from the central portion to the peripheral portion in order, and the flexible insulating substrate 6 is deformed to imitate the wiring substrate 5 on the semiconductor pellet 1. Therefore, trapping of air bubbles can be completely prevented. Further, in the embodiment of FIG. 3, the projections 14 are fixed to the support table 13, but they may be arranged so as to be able to protrude and retreat from the upper surface of the support table 13. In this case, the protrusion 14 may have a flat upper surface, and the thickness of the bonding resin 12 may be formed to be lower than the sum of the heights of the bump electrode 4 and the pad electrode 8. The present invention is not limited to the above embodiment. For example, the adhesive resin 12 is formed not only in such a manner that the upper surface is formed flat and the entire surface is brought into close contact with the back surface of the semiconductor pellet 1 but also in parallel with the surface. A lattice-shaped fine groove may be formed, and the strip-shaped or island-shaped surface may be brought into close contact with the semiconductor pellet 1. Further, a liquid thermosetting resin-based adhesive may be used in combination. As a result, the liquid adhesive can be spread on the outer periphery of the bonding resin 12, and it can be completely sealed up to the outer peripheral region of the semiconductor pellet 1 including the electrode portion. In this case, the amount of the liquid adhesive used is extremely small, and the liquid resin between the semiconductor pellet 1 and the bonding resin 12 is extremely thin, so that it can be cured and bonded in a short time.
【０００７】[0007]
【発明の効果】以上のように、本発明によれば接着用樹
脂が配線基板に予め形成され、この接着用樹脂に半導体
ペレットを加熱しながら押し当てるだけでよく、短時間
で接着を完了できるため製造が簡単で、気泡の残留もな
く、残留気泡にもとづく問題を生じない信頼性の高い半
導体装置を実現できる。As described above, according to the present invention, the bonding resin is previously formed on the wiring substrate, and it is only necessary to press the semiconductor pellet against the bonding resin while heating, and the bonding can be completed in a short time. Therefore, it is possible to realize a highly reliable semiconductor device which is easy to manufacture, has no bubbles, and does not cause a problem based on the remaining bubbles.
【図１】 本発明の実施例を示す半導体装置の側断面図FIG. 1 is a side sectional view of a semiconductor device showing an embodiment of the present invention.
【図２】 図１半導体装置の製造方法を説明する側断面
図FIG. 2 is a side sectional view illustrating a method for manufacturing the semiconductor device in FIG. 1;
【図３】 図１半導体装置の製造方法を説明する側断面
図FIG. 3 is a side sectional view illustrating a method of manufacturing the semiconductor device in FIG. 1;
【図４】 本発明の前提となる半導体装置の従来例を示
す側断面図FIG. 4 is a side sectional view showing a conventional example of a semiconductor device on which the present invention is based;
【図５】 図５半導体装置の製造方法の一例を示す側断
面図FIG. 5 is a side sectional view showing an example of a method for manufacturing a semiconductor device.
【図６】 図５半導体装置の製造方法の他の例を示す側
断面図FIG. 6 is a side sectional view showing another example of the method for manufacturing a semiconductor device.
【図７】 図５半導体装置の製造方法の他の例を示す側
断面図FIG. 7 is a side sectional view showing another example of the method for manufacturing a semiconductor device.
４ バンプ電極 １ 半導体ペレット ８ パッド電極 ５ 配線基板 １２ 接着用樹脂 4 Bump electrode 1 Semiconductor pellet 8 Pad electrode 5 Wiring board 12 Adhesive resin
Claims (5)
バンプ電極と対向してパッド電極を形成した配線基板と
を対向させ、バンプ電極とパッド電極とを重合させて加
熱、加圧し電気的に接続するとともに半導体ペレットと
配線基板の対向面間を接着用樹脂で接着した半導体装置
において、 上記接着用樹脂として、半導体ペレットの加熱温度で表
面が熱変形する熱硬化性樹脂を用いたことを特徴とする
半導体装置。A semiconductor pellet having a bump electrode is opposed to a wiring substrate having a pad electrode opposed to the bump electrode, and the bump electrode and the pad electrode are superimposed, heated, pressed, and electrically connected. And a semiconductor device in which the opposing surfaces of the semiconductor pellet and the wiring substrate are bonded with an adhesive resin, wherein a thermosetting resin whose surface is thermally deformed at the heating temperature of the semiconductor pellet is used as the adhesive resin. Semiconductor device.
を特徴とする請求項１に記載の半導体装置。2. The semiconductor device according to claim 1, wherein the thermosetting resin is an epoxy resin.
導体ペレットのバンプ電極と対応してパッド電極を形成
しかつパッド電極で囲まれる領域内に熱硬化性樹脂から
なる接着用樹脂層を形成した配線基板とを、バンプ電極
とパッド電極とが重合するように対向させ、少なくとも
半導体ペレットを加熱しつつ対向面を相対的に近接さ
せ、半導体ペレットを接着用樹脂層に接触させてその表
面を加熱し軟化させて接着用樹脂層に密着させ、半導体
ペレットの加熱、加圧状態を保って、バンプ電極とパッ
ド電極とを熱圧着するとともに、熱変形させた接着用樹
脂層を半導体ペレットの裏面に密着させ、半導体ペレッ
トと配線基板とを接着するようにしたことを特徴とする
半導体装置の製造方法。3. A semiconductor pellet having a bump electrode, and a wiring in which a pad electrode is formed corresponding to the bump electrode of the semiconductor pellet and an adhesive resin layer made of a thermosetting resin is formed in a region surrounded by the pad electrode. The substrate is opposed so that the bump electrode and the pad electrode are superimposed, and at least the facing surfaces are relatively close to each other while heating the semiconductor pellet, and the surface is heated by bringing the semiconductor pellet into contact with the bonding resin layer. Softens and adheres to the adhesive resin layer, maintains the heating and pressurized state of the semiconductor pellet, thermocompresses the bump electrode and the pad electrode, and adheres the thermally deformed adhesive resin layer to the back surface of the semiconductor pellet. And bonding the semiconductor pellet and the wiring substrate to each other.
を、パッド電極で囲まれる領域の中央部が突出するよう
に支持し、半導体ペレットのバンプ電極をパッド電極に
押圧する際に半導体ペレットの下面中央部から周縁部に
向かって順次接着用樹脂を接着させるようにしたことを
特徴とする請求項３に記載の半導体装置の製造方法。4. A wiring board made of a flexible insulating member is supported such that a central portion of a region surrounded by a pad electrode protrudes, and a semiconductor pellet is pressed when a bump electrode of the semiconductor pellet is pressed against the pad electrode. 4. The method of manufacturing a semiconductor device according to claim 3, wherein an adhesive resin is sequentially bonded from a lower surface center portion to a peripheral edge portion of the semiconductor device.
トの裏面に密着させる際に、配線基板の裏面より接着用
樹脂層の形成領域を加圧することを特徴とする請求項３
に記載の半導体装置の製造方法。5. The method according to claim 3, wherein when the thermally softened adhesive resin layer is brought into close contact with the back surface of the semiconductor pellet, a region where the adhesive resin layer is formed is pressed from the back surface of the wiring board.
13. The method for manufacturing a semiconductor device according to item 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20556097A JPH1154545A (en) | 1997-07-31 | 1997-07-31 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20556097A JPH1154545A (en) | 1997-07-31 | 1997-07-31 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1154545A true JPH1154545A (en) | 1999-02-26 |
Family
ID=16508925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20556097A Pending JPH1154545A (en) | 1997-07-31 | 1997-07-31 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1154545A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1126517A3 (en) * | 2000-02-09 | 2002-06-05 | Interuniversitair Micro-Elektronica Centrum | Method for flip-chip assembly of semiconductor devices using adhesives |
-
1997
- 1997-07-31 JP JP20556097A patent/JPH1154545A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1126517A3 (en) * | 2000-02-09 | 2002-06-05 | Interuniversitair Micro-Elektronica Centrum | Method for flip-chip assembly of semiconductor devices using adhesives |
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