JPH1152394A - Liquid crystal display device and its production - Google Patents

Liquid crystal display device and its production

Info

Publication number
JPH1152394A
JPH1152394A JP20312597A JP20312597A JPH1152394A JP H1152394 A JPH1152394 A JP H1152394A JP 20312597 A JP20312597 A JP 20312597A JP 20312597 A JP20312597 A JP 20312597A JP H1152394 A JPH1152394 A JP H1152394A
Authority
JP
Japan
Prior art keywords
liquid crystal
display device
crystal display
substrate
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20312597A
Other languages
Japanese (ja)
Inventor
Chikaaki Mizoguchi
親明 溝口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Electric Kagoshima Ltd
NEC Kagoshima Ltd
Original Assignee
Nippon Electric Kagoshima Ltd
NEC Kagoshima Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Kagoshima Ltd, NEC Kagoshima Ltd filed Critical Nippon Electric Kagoshima Ltd
Priority to JP20312597A priority Critical patent/JPH1152394A/en
Publication of JPH1152394A publication Critical patent/JPH1152394A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1339Gaskets; Spacers; Sealing of cells
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes

Landscapes

  • Liquid Crystal (AREA)

Abstract

PROBLEM TO BE SOLVED: To prevent the occurrence of a curing defect of a UV curing resin seal in the overlap part of the extraction wiring, sealing part and CF black of a TFT liquid crystal display device. SOLUTION: The extraction wiring of the TFT substrate 1 in the position corresponding to the overlap part of the extraction wiring and the sealing part 3 is formed of a transparent electrode. As a result, the TFT liquid crystal display device which eliminates the curing defect of the photosetting resin seal caused thus far by the overlapping part consisting of a light shielding material by making it possible to effectively irradiate the photosetting resin seal with UV light 9 and has practicable strength is obtd.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、液晶表示装置及び
その製造方法に関し、特に二枚の基板のシール部分のU
V硬化向上を目指した液晶表示装置及びその製造方法に
関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device and a method of manufacturing the same, and more particularly to a liquid crystal display device having a seal portion between two substrates.
The present invention relates to a liquid crystal display device for improving V-curing and a method for manufacturing the same.

【0002】[0002]

【従来の技術】従来の薄膜トランジスタを使ったアクテ
ィブマトリクス型液晶表示装置の周辺部の概略の断面図
を図7に示す。金属配線5を有するTFT基板1とCF
ブラック4を有するCF基板2とをシール部3により接
合した構造をしている。この構造の欠点は、シール部3
に光硬化性樹脂を使用する場合、これを硬化させるため
に必要なUV光9がCFブラック4と金属配線5によっ
て遮られ、配線パターンの下でシールの硬化不良を引き
起こすことにより、その部分でリークが発生するなど信
頼性上の問題が生じることである。
2. Description of the Related Art FIG. 7 is a schematic sectional view of a peripheral portion of a conventional active matrix type liquid crystal display device using thin film transistors. TFT substrate 1 having metal wiring 5 and CF
It has a structure in which a CF substrate 2 having a black 4 is joined by a seal portion 3. The disadvantage of this structure is that the seal 3
When a photo-curable resin is used, the UV light 9 necessary for curing the resin is blocked by the CF black 4 and the metal wiring 5, causing poor curing of the seal under the wiring pattern. That is, a reliability problem such as a leak occurs.

【0003】その理由は、実際の製品においては、CF
ブラック4と金属配線5の隙間は約5μmであるのに対
し、金属配線5の線幅は50μm程であり、隙間から入
射したUV光は配線パターンの中央部に達する前に著し
く減衰してしまうからである。
[0003] The reason is that in actual products, CF
While the gap between the black 4 and the metal wiring 5 is about 5 μm, the line width of the metal wiring 5 is about 50 μm, and the UV light incident from the gap is significantly attenuated before reaching the center of the wiring pattern. Because.

【0004】この点に関する改善として特開平8−87
019では、パネルをUV光源と光反射部材の間に入れ
てパネルの表・裏両面からUV光が当たるようにしたU
V照射装置が示されている。又、特開平8−87020
ではUV光源側に光散乱部材をいれてCFブラックに斜
めに光を当てて影の部分も光が当たるようにしたUV照
射装置が示されている。又、特開平5−192933で
は光硬化性樹脂内に照射光を反射もしくは屈折させるた
めの微少個体粒子を予め混入分散させ、影の部分にもU
V光が当たるようにした光硬化性樹脂が提示されてい
る。
As an improvement in this respect, Japanese Patent Laid-Open Publication No.
In No. 019, the panel is inserted between the UV light source and the light reflecting member so that the UV light is applied from both the front and back surfaces of the panel.
A V irradiation device is shown. Also, JP-A-8-87020
Discloses a UV irradiator in which a light scattering member is provided on the UV light source side to irradiate light obliquely to CF black so that light is also applied to a shadow portion. In Japanese Patent Application Laid-Open No. 5-192933, minute solid particles for reflecting or refracting irradiation light are mixed and dispersed in a photocurable resin in advance.
A photocurable resin that is exposed to V light has been proposed.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、上記従
来の技術において、特開平8−87019に提案されて
いる方法は、予め2枚のガラス基板の間に接着剤を挟み
込んで一体形状としたワークに対し、CFブラック側か
らUV光を当ててワークを透過したUV光を光反射部材
で反射させて、この反射したUV光をTFT基板側から
当てるものであり、CFブラック側から入射するUV光
をCFブラックが遮ることについては回避出来てもTF
T基板に存在する金属配線パターンによる遮光に対して
の効果は無いため配線パターン下の部分の光硬化性樹脂
は硬化しない。
However, in the above-mentioned prior art, the method proposed in Japanese Patent Application Laid-Open No. 8-87019 discloses a method in which an adhesive is sandwiched between two glass substrates in advance to form an integrated work. On the other hand, the UV light transmitted from the CF black side and transmitted through the work is reflected by the light reflecting member, and the reflected UV light is applied from the TFT substrate side. Even if the CF black can be avoided,
Since there is no effect on light shielding by the metal wiring pattern existing on the T substrate, the photocurable resin under the wiring pattern is not cured.

【0006】また、特開平8−87020に提案されて
いる方法は、上記のワークに対してCFブラック側のワ
ーク近傍に光拡散部材を配置して、CFブラックに斜め
にUV光を当てて影の部分に届かせようとしたものであ
るが、前記のように5μmの隙間から斜めに入射した光
では減衰が著しいため配線パターン下の部分の光硬化性
樹脂は実用的な強度までの硬化を得ることが出来ない。
In the method proposed in Japanese Patent Application Laid-Open No. 8-87020, a light diffusing member is arranged near the above-mentioned work on the CF black side, and the CF black is obliquely exposed to UV light to form a shadow. However, as described above, light obliquely incident from a gap of 5 μm significantly attenuates, so that the photocurable resin under the wiring pattern hardens to a practical strength. I can't get it.

【0007】また、特開平5−192933に提案され
ている方法は、紫外線硬化樹脂内に、照射光を反射もし
くは屈折させるための微少個体粒子群を分散させること
によって紫外線が当たりにくい部分にも到達させようと
したものであるが、液晶表示装置のような間口が狭く奥
行きの長い形状の部分に対するものとしては、やはり減
衰が大きく光硬化性樹脂は実用的な強度までの硬化を得
ることが出来ない。
The method proposed in Japanese Patent Application Laid-Open No. HEI 5-192933 discloses a method of dispersing minute solid particles for reflecting or refracting irradiation light in an ultraviolet curable resin to reach a portion hardly exposed to ultraviolet light. However, as for liquid crystal display devices with narrow frontage and long depth, photo-curable resins with large attenuation also can harden to practical strength. Absent.

【0008】本発明の目的は、金属配線を有するTFT
液晶表示装置において、光硬化性樹脂を使用したシール
剤が、金属配線とCFブラックマトリクスとの間で光強
度不足による硬化不良を起こしていた問題を解消し、実
用的な信頼性強度を保った製品を提供することにある。
An object of the present invention is to provide a TFT having a metal wiring
In a liquid crystal display device, the problem that a sealant using a photocurable resin caused poor curing due to insufficient light intensity between a metal wiring and a CF black matrix was solved, and practical reliability was maintained. To provide products.

【0009】[0009]

【課題を解決するための手段】本発明は、画素マトリク
スが形成されている第一の基板とカラーフィルターが形
成されている第二の基板を、その周辺部をシール材を用
いて貼り合わせて、その内部に液晶を封入して成る液晶
表示装置において、前記第一の基板の周辺部に配置され
る電極端子へ引き出される配線と前記シールの部分とが
オーバーラップする部分の前記配線部分を透明導電膜と
してUV光が効果的に光硬化性樹脂シールへ照射できる
様にしたものである。
According to the present invention, a first substrate on which a pixel matrix is formed and a second substrate on which a color filter is formed are bonded to each other by using a sealing material at a peripheral portion thereof. In a liquid crystal display device in which liquid crystal is sealed therein, the wiring portion of the portion where the wire drawn to the electrode terminal arranged on the periphery of the first substrate and the seal portion overlap is transparent. UV light can be effectively irradiated to the photocurable resin seal as a conductive film.

【0010】なお、前記オーバーラップ部分以外の前記
配線は金属として配線抵抗による電圧低下を最小限に抑
えるようにしてもよいし、前記オーバーラップ部分以外
の前記配線は金属と透明電極膜の2層として電圧低下を
最小限に抑えるようにしてもよい。
The wiring other than the overlap portion may be made of metal so that a voltage drop due to wiring resistance is minimized, and the wiring other than the overlap portion is formed of two layers of metal and a transparent electrode film. The voltage drop may be minimized.

【0011】本発明は、前記オーバーラップ部分の前記
配線に穴又はスリットを形成してUV光が光硬化性樹脂
シールへ照射できる様にしたものである。前記穴又はス
リット上に透明電極膜を形成して電圧低下を最小限に抑
えるようにしてもよい。
According to the present invention, a hole or a slit is formed in the wiring in the overlap portion so that UV light can be applied to the photocurable resin seal. A transparent electrode film may be formed on the holes or slits to minimize the voltage drop.

【0012】また、本発明によれば、フォトリソグラフ
法で配線を形成するに当たってシール部とオーバーラッ
プする部分も金属を除去する工程と、透明導電膜を形成
する工程と、フォトリソグラフ法で配線及びオーバーラ
ップ部上に透明導電膜を形成する工程とを含む液晶表示
装置の製造方法が得られる。
Further, according to the present invention, in forming a wiring by a photolithographic method, a step of removing a metal also in a portion overlapping with a seal portion, a step of forming a transparent conductive film, a step of forming a wiring and a photolithographic method. Forming a transparent conductive film on the overlapped portion, thereby obtaining a liquid crystal display device manufacturing method.

【0013】さらに、本発明によれば、画素マトリクス
が形成されている第一の基板とカラーフィルタが形成さ
れている第二の基板を、その周辺部をシール剤を用いて
貼り合わせて、その内部に液晶を封入して液晶表示装置
を製造する方法において、前記第一の基板の周辺部に配
置される電極端子へ引き出される配線と前記シールの部
分とがオーバーラップする部分に対応する前記第二の基
板のブラックマトリクス部分に光透過用の窓を形成して
UV光が効果的に光硬化性樹脂シールへ照射できる様に
した液晶表示装置が得られる。
Further, according to the present invention, the first substrate on which the pixel matrix is formed and the second substrate on which the color filter is formed are bonded by using a sealant at the peripheral portion thereof. In the method of manufacturing a liquid crystal display device by enclosing liquid crystal therein, the first portion corresponding to a portion where a wire led out to an electrode terminal arranged at a peripheral portion of the first substrate and a portion of the seal overlap. A liquid crystal display device is provided in which a window for light transmission is formed in the black matrix portion of the second substrate so that UV light can be effectively irradiated to the photocurable resin seal.

【0014】[0014]

【発明の実施の形態】次に本発明について図面を参照し
て詳細に説明する。図1は本発明の第一の実施の形態の
液晶表示装置の周辺部を示す断面図である。同図におい
てCF基板2上に形成されたCFブラック4により遮光
されたシール部3に対向する部分について、TFT基板
1上に形成された金属配線5がオーバーラップしないよ
うにパターニングを行い、同時に形成された端子取り出
し側金属配線10との間をITO(透明導電膜,酸化イ
ンジウムスズ)配線6で接続しUV光9がこのITO配
線6を透過してシール部3へ達する構造としたものであ
る。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail with reference to the drawings. FIG. 1 is a sectional view showing a peripheral portion of the liquid crystal display device according to the first embodiment of the present invention. In the same figure, the portion facing the seal portion 3 shielded from light by the CF black 4 formed on the CF substrate 2 is patterned so that the metal wiring 5 formed on the TFT substrate 1 does not overlap, and is formed simultaneously. In this case, an ITO (transparent conductive film, indium tin oxide) wiring 6 is connected between the terminal extraction side metal wiring 10 and the UV light 9 penetrates the ITO wiring 6 to reach the seal portion 3. .

【0015】ここでITO配線6のみで端子取り出し側
金属配線10と金属配線5とを接続する領域は、ITO
配線6の電気抵抗による駆動電圧低下を抑えるためにシ
ール部3の幅全体を含んだ必要最小限の部分とするのが
望ましいが、実駆動上の障害にならない範囲であれば例
えば端子取り出し側金属配線10を形成せず、ITO配
線6のみとした構造も可能となる。
Here, the region connecting the metal wiring 10 and the metal wiring 5 on the terminal lead-out side only with the ITO wiring 6 is the ITO wiring.
In order to suppress a decrease in drive voltage due to the electric resistance of the wiring 6, it is desirable to set a minimum necessary portion including the entire width of the seal portion 3. A structure in which only the ITO wiring 6 is formed without forming the wiring 10 is also possible.

【0016】図2はその平面図である。ここではTFT
基板1側から直視した図を示す。ここでCF基板2のC
Fブラック4はシール部3とオーバーラップしていて図
の裏面側即ちCF側からはシール部3にUV光を当てる
ことは出来ない。一方TFT基板側では、金属配線5と
端子取り出し側金属配線10間はITO配線6としてシ
ール部3にUV光を当てる際に障害の無いような構造と
している。
FIG. 2 is a plan view thereof. Here, TFT
The figure which looked directly from the board | substrate 1 side is shown. Here, C of CF substrate 2
The F black 4 overlaps the seal portion 3 and cannot expose the seal portion 3 to UV light from the back side of the drawing, that is, from the CF side. On the other hand, on the TFT substrate side, between the metal wiring 5 and the terminal take-out side metal wiring 10, an ITO wiring 6 is formed so as to have no obstacle when applying UV light to the seal portion 3.

【0017】図3(a)〜(d)は本発明における配線
形成工程を示す図である。最初に(a)に示すようにT
FT基板1上に金属膜31を成膜する。次に(b)に示
すように金属膜31をパターニングする。この時シール
部3とオーバーラップする部分は予め間を開けておく。
次に(c)に示すようにITO膜32を成膜する。
FIGS. 3A to 3D are views showing a wiring forming step in the present invention. First, as shown in FIG.
A metal film 31 is formed on the FT substrate 1. Next, the metal film 31 is patterned as shown in FIG. At this time, a portion overlapping with the seal portion 3 is previously opened.
Next, an ITO film 32 is formed as shown in FIG.

【0018】最後に(d)に示すようにITO膜をパタ
ーニングしITO配線6を形成する。この例ではITO
配線6は、金属電極5上と端子取り出し側電極10上全
面に形成したが、ITO配線は最低限金属電極5と端子
取り出し側電極10間を接続できるように形成してもよ
い。以上の工程手順は通常のTFT素子形成フロー内で
実現可能であり、本発明の工程についてはフォトマスク
の形成のみで実現される。
Finally, the ITO film is patterned to form an ITO wiring 6 as shown in FIG. In this example, ITO
Although the wiring 6 is formed on the entire surface of the metal electrode 5 and the terminal extraction side electrode 10, the ITO wiring may be formed so as to connect at least the metal electrode 5 and the terminal extraction side electrode 10. The above steps can be realized in a normal TFT element formation flow, and the steps of the present invention can be realized only by forming a photomask.

【0019】図4は本発明の第二の実施の形態を示す平
面図である。この実施の形態においては、シール部3と
金属配線5とのオーバーラップする部分にスリット7を
設け、配線外端及びスリット7部分から入射した斜め方
向のUV光が、線幅8で示した金属配線とCFブラック
4との間にあるシール部3の紫外線硬化樹脂に対し多重
反射等により到達する構造としている。
FIG. 4 is a plan view showing a second embodiment of the present invention. In this embodiment, a slit 7 is provided at a portion where the seal portion 3 and the metal wiring 5 overlap each other, and oblique UV light incident from the outer end of the wiring and the slit 7 is applied to the metal indicated by the line width 8. The structure is such that the ultraviolet curable resin of the seal portion 3 between the wiring and the CF black 4 reaches the resin by multiple reflection or the like.

【0020】本実施の形態は、第一の実施の形態で生じ
るITO接合部での電気抵抗による電圧ダウンの緩和を
目的としたものであり、この意味からスリット7へのI
TO形成は第一の実施の形態と同様に実施したほうが望
ましい。この第二の実施の形態においては、スリット7
の幅と線幅8の寸法を電気抵抗と紫外線硬化樹脂へのU
V光到達度の兼ね合いを考慮した上で決定すべきもので
ある。但し第二の実施の形態においては、シール剤の硬
化強度は原理的に第一の実施の形態より劣るため、通常
の駆動条件下では第一の実施の形態のほうが優る。ま
た、スリット部のパターニング不良が寸法精度的に発生
し易くなるため、歩留まり上も第一の実施形態のほうが
よい。なお、この実施の形態では金属配線にスリットを
設ける場合を示したが、スリットの代わりに丸や4角の
穴を設けてもよい。
This embodiment aims at alleviating the voltage drop caused by the electric resistance at the ITO junction generated in the first embodiment.
It is desirable to form the TO in the same manner as in the first embodiment. In the second embodiment, the slit 7
The width of the wire and the dimension of the line width 8 are determined by the electric resistance and U
This should be determined in consideration of the V light arrival level. However, in the second embodiment, the curing strength of the sealant is in principle inferior to that of the first embodiment, so that the first embodiment is superior under normal driving conditions. In addition, since the patterning failure of the slit portion is likely to occur with dimensional accuracy, the first embodiment is better in terms of yield. In this embodiment, the case where a slit is provided in the metal wiring is shown, but a round or square hole may be provided instead of the slit.

【0021】次に本発明の第三の実施の形態について説
明する。図5はその断面図である。この実施の形態はC
F側のブラックマトリクスに対してシール部及びTFT
基板側配線とオーバーラップする部分にUV光を透過す
る窓を設けたものである(以下「BM窓」と称す)。
Next, a third embodiment of the present invention will be described. FIG. 5 is a sectional view thereof. In this embodiment, C
Seal part and TFT for F side black matrix
A window that transmits UV light is provided in a portion overlapping with the wiring on the substrate side (hereinafter, referred to as a “BM window”).

【0022】図5に示すように、CFブラック4のシー
ル部3と金属配線5とのオーバーラップする部分につい
てBM窓11を設け、配線外端及びBM窓11部分から
入射した斜め方向のUV光がシール部3の紫外線硬化樹
脂に対し多重反射等により到達する構造としている。
As shown in FIG. 5, a BM window 11 is provided at a portion where the seal portion 3 of the CF black 4 and the metal wiring 5 overlap, and oblique UV light incident from the outer end of the wiring and the BM window 11 is provided. Reach the ultraviolet curing resin of the seal portion 3 by multiple reflection or the like.

【0023】図6はその平面図である。この場合はTF
T基板側の配線パターンは従来通りで良く、電圧降下に
ついての考慮は不要であるが、UV光を素子の表裏両方
から照射する必要があるのとCF,TFT両方のパター
ン精度さらに両基板の重ね合わせ精度が要求されること
になる。
FIG. 6 is a plan view thereof. In this case, TF
The wiring pattern on the T-substrate side may be the same as the conventional one, and there is no need to consider the voltage drop. However, it is necessary to irradiate UV light from both the front and back of the element. Alignment accuracy is required.

【0024】[0024]

【発明の効果】以上説明した本発明の効果は、TFT基
板引き出し配線とCF基板のCFブラックマトリクスと
の間に挟まれた部分の紫外線硬化樹脂シールを実用的強
度に硬化させられることである。その理由は、引き出し
配線とシールとがオーバーラップする部分に紫外線を透
過する導電材料にするか又は配線部分に穴又はスリット
を設け、あるいは引き出し配線とシールとがオーバーラ
ップする部分のCFブラックマトリクスのオーバーラッ
プ部分に紫外線を透過する窓となるパターンを設けたか
らである。
The effect of the present invention described above is that the ultraviolet curable resin seal in the portion sandwiched between the lead wiring of the TFT substrate and the CF black matrix of the CF substrate can be cured with practical strength. The reason is that a conductive material that transmits ultraviolet light is used in a portion where the lead wiring and the seal overlap, or a hole or a slit is provided in the wiring portion, or a CF black matrix in a portion where the lead wiring and the seal overlap is formed. This is because a pattern serving as a window that transmits ultraviolet light is provided in the overlapping portion.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施の形態を示す断面図であ
る。
FIG. 1 is a cross-sectional view showing a first embodiment of the present invention.

【図2】本発明の第1の実施の形態を示す平面図であ
る。
FIG. 2 is a plan view showing the first embodiment of the present invention.

【図3】(a)〜(d)は本発明の第1の実施の形態の
製造工程を示す斜視図である。
FIGS. 3A to 3D are perspective views showing a manufacturing process according to the first embodiment of the present invention.

【図4】(a),(b)は本発明の第2の実施の形態を
示す平面図及びスリット部分拡大図である。
FIGS. 4 (a) and 4 (b) are a plan view and a partially enlarged view of a slit showing a second embodiment of the present invention.

【図5】本発明の第3の実施の形態を示す断面図であ
る。
FIG. 5 is a sectional view showing a third embodiment of the present invention.

【図6】本発明の第3の実施の形態を示す断面図であ
る。
FIG. 6 is a sectional view showing a third embodiment of the present invention.

【図7】従来の技術を示す断面図である。FIG. 7 is a cross-sectional view showing a conventional technique.

【符号の説明】[Explanation of symbols]

1 TFT基板 2 CF基板 3 シール部 4 CFブラック 5 金属配線 6 ITO配線 7 スリット 8 線幅 9 UV光 10 端子取り出し側金属配線 11 BM窓 DESCRIPTION OF SYMBOLS 1 TFT substrate 2 CF substrate 3 Seal part 4 CF black 5 Metal wiring 6 ITO wiring 7 Slit 8 Line width 9 UV light 10 Terminal extraction side metal wiring 11 BM window

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 画素マトリクスが形成されている第一の
基板とカラーフィルタが形成されている第二の基板を、
その周辺部をシール剤を用いて貼り合わせて、その内部
に液晶を封入して成る液晶表示装置において、前記第一
の基板の周辺部に配置される電極端子へ引き出される配
線と前記シール部分とがオーバーラップする部分の前記
配線部分を透明導電膜としたことを特徴とする液晶表示
装置。
A first substrate on which a pixel matrix is formed and a second substrate on which a color filter is formed;
In a liquid crystal display device in which the peripheral portion is bonded using a sealant and liquid crystal is sealed therein, wiring drawn to an electrode terminal arranged in the peripheral portion of the first substrate, the sealing portion, A liquid crystal display device, wherein a transparent conductive film is used for a portion of the wiring where the wire overlaps.
【請求項2】 前記オーバーラップ部分以外の前記配線
が金属であることを特徴とする請求項1記載の液晶表示
装置。
2. The liquid crystal display device according to claim 1, wherein the wiring other than the overlap portion is made of metal.
【請求項3】 前記オーバーラップ部分以外の前記配線
が金属と透明電極膜の2層であることを特徴とする請求
項1記載の液晶表示装置。
3. The liquid crystal display device according to claim 1, wherein the wiring other than the overlap portion is a two-layered structure including a metal and a transparent electrode film.
【請求項4】 画素マトリクスが形成されている第一の
基板とカラーフィルタが形成されている第二の基板をそ
の周辺部をシール剤を用いて貼り合わせて、その内部に
液晶を封入して成る液晶表示装置において、前記第一の
基板の周辺部に配置される電極端子へ引き出される配線
と前記シール部分とがオーバーラップする部分の配線部
分に穴又はスリットが形成されていることを特徴とする
液晶表示装置。
4. A first substrate on which a pixel matrix is formed and a second substrate on which a color filter is formed are bonded to each other using a sealant at a peripheral portion thereof, and liquid crystal is sealed therein. In the liquid crystal display device, a hole or a slit is formed in a wiring portion of a portion where a wire drawn to an electrode terminal arranged in a peripheral portion of the first substrate and the seal portion overlap. Liquid crystal display device.
【請求項5】 前記穴又はスリット上に透明電極膜を形
成したことを特徴とする請求項4記載の液晶表示装置。
5. The liquid crystal display device according to claim 4, wherein a transparent electrode film is formed on the hole or the slit.
【請求項6】 画素マトリクスが形成されている第一の
基板とカラーフィルタが形成されている第二の基板を、
その周辺部をシール剤を用いて貼り合わせて、その内部
に液晶を封入する液晶表示装置の製造方法において、前
記第一の基板に配線用の金属膜を形成し、フォトリソグ
ラフ法で配線を形成するに当たって前記シール部分とオ
ーバーラップする部分も金属を除去する工程と、透明導
電膜を形成する工程と、フォトリソグラフ法で前記配線
及び前記オーバーラップ部上に透明導電膜を形成する工
程とを含むことを特徴とする液晶表示装置の製造方法。
6. A first substrate on which a pixel matrix is formed and a second substrate on which a color filter is formed,
In a method of manufacturing a liquid crystal display device in which a peripheral portion thereof is bonded using a sealant and a liquid crystal is sealed therein, a metal film for wiring is formed on the first substrate, and a wiring is formed by a photolithographic method. In doing so, the method includes a step of removing a metal also in a portion overlapping the seal portion, a step of forming a transparent conductive film, and a step of forming a transparent conductive film on the wiring and the overlap portion by a photolithographic method. A method for manufacturing a liquid crystal display device, comprising:
【請求項7】 画素マトリクスが形成されている第一の
基板とカラーフィルタが形成されている第二の基板を、
その周辺部をシール剤を用いて貼り合わせて、その内部
に液晶を封入してなる液晶表示装置において、前記第一
の基板の周辺部に配置される電極端子へ引き出される配
線と前記シールの部分とがオーバーラップする部分に対
応する前記第二の基板のブラックマトリクス部分に光透
過用の窓が形成されていることを特徴とする液晶表示装
置。
7. A first substrate on which a pixel matrix is formed and a second substrate on which a color filter is formed,
In a liquid crystal display device in which liquid crystal is sealed in a liquid crystal display device in which a liquid crystal is sealed in the liquid crystal display device, a wiring drawn to an electrode terminal disposed in a peripheral portion of the first substrate and a portion of the seal are attached. A liquid crystal display device, wherein a window for light transmission is formed in a black matrix portion of the second substrate corresponding to a portion where the first and second substrates overlap.
JP20312597A 1997-07-29 1997-07-29 Liquid crystal display device and its production Pending JPH1152394A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20312597A JPH1152394A (en) 1997-07-29 1997-07-29 Liquid crystal display device and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20312597A JPH1152394A (en) 1997-07-29 1997-07-29 Liquid crystal display device and its production

Publications (1)

Publication Number Publication Date
JPH1152394A true JPH1152394A (en) 1999-02-26

Family

ID=16468828

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JPH1152394A (en)

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