|
DE19723177A1
(de)
|
1997-06-03 |
1998-12-10 |
Daimler Benz Ag |
Spannungsgesteuerter wellenlängenselektiver Photodetektor
|
|
US6423984B1
(en)
*
|
1998-09-10 |
2002-07-23 |
Toyoda Gosei Co., Ltd. |
Light-emitting semiconductor device using gallium nitride compound semiconductor
|
|
WO2000067891A2
(en)
|
1999-05-06 |
2000-11-16 |
Trustees Of Boston University |
Reflective layer buried in silicon and method of fabrication
|
|
US6561693B1
(en)
*
|
2000-09-21 |
2003-05-13 |
Lockheed Martin Corporation |
Remote temperature sensing long wave length modulated focal plane array
|
|
US6498336B1
(en)
*
|
2000-11-15 |
2002-12-24 |
Pixim, Inc. |
Integrated light sensors with back reflectors for increased quantum efficiency
|
|
US7501303B2
(en)
|
2001-11-05 |
2009-03-10 |
The Trustees Of Boston University |
Reflective layer buried in silicon and method of fabrication
|
|
FR2833757B1
(fr)
*
|
2001-12-13 |
2004-11-05 |
Commissariat Energie Atomique |
Dispositif d'emission de lumiere et procede de fabrication d'un tel dispositif
|
|
WO2006044983A2
(en)
*
|
2004-10-20 |
2006-04-27 |
Massachusetts Institute Of Technology |
Multi-spectral pixel and focal plane array
|
|
KR100664988B1
(ko)
*
|
2004-11-04 |
2007-01-09 |
삼성전기주식회사 |
광추출효율이 향상된 반도체 발광소자
|
|
US7279380B2
(en)
*
|
2004-11-10 |
2007-10-09 |
Macronix International Co., Ltd. |
Method of forming a chalcogenide memory cell having an ultrasmall cross-sectional area and a chalcogenide memory cell produced by the method
|
|
US20080179636A1
(en)
*
|
2007-01-27 |
2008-07-31 |
International Business Machines Corporation |
N-fets with tensilely strained semiconductor channels, and method for fabricating same using buried pseudomorphic layers
|
|
US20090078316A1
(en)
*
|
2007-09-24 |
2009-03-26 |
Qualcomm Incorporated |
Interferometric photovoltaic cell
|
|
US9362428B2
(en)
|
2012-11-27 |
2016-06-07 |
Artilux, Inc. |
Photonic lock based high bandwidth photodetector
|
|
US10388806B2
(en)
|
2012-12-10 |
2019-08-20 |
Artilux, Inc. |
Photonic lock based high bandwidth photodetector
|
|
US10916669B2
(en)
|
2012-12-10 |
2021-02-09 |
Artilux, Inc. |
Photonic lock based high bandwidth photodetector
|
|
EP3723140B1
(en)
*
|
2013-12-28 |
2023-09-20 |
Artilux Inc. |
Photonic lock based high bandwidth photodetector
|
|
US10644187B2
(en)
|
2015-07-24 |
2020-05-05 |
Artilux, Inc. |
Multi-wafer based light absorption apparatus and applications thereof
|
|
CN107393984B
(zh)
*
|
2017-06-27 |
2019-08-20 |
上海集成电路研发中心有限公司 |
一种提高光吸收率的量子阱红外探测器及其制作方法
|
|
US10892295B2
(en)
|
2018-01-10 |
2021-01-12 |
Microsoft Technology Licensing, Llc |
Germanium-modified, back-side illuminated optical sensor
|
|
KR102642657B1
(ko)
*
|
2019-07-01 |
2024-02-29 |
후지필름 가부시키가이샤 |
광검출 소자, 광검출 소자의 제조 방법 및 이미지 센서
|
|
DE102020201998B4
(de)
|
2020-02-18 |
2024-02-22 |
Eagleburgmann Germany Gmbh & Co. Kg |
Spalttopf mit integrierter Kühlung oder Heizung
|