JP4137999B2 - 反射性半導体基板 - Google Patents

反射性半導体基板 Download PDF

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Publication number
JP4137999B2
JP4137999B2 JP50022197A JP50022197A JP4137999B2 JP 4137999 B2 JP4137999 B2 JP 4137999B2 JP 50022197 A JP50022197 A JP 50022197A JP 50022197 A JP50022197 A JP 50022197A JP 4137999 B2 JP4137999 B2 JP 4137999B2
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Japan
Prior art keywords
wavelength
layer
cavity
reflector
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP50022197A
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English (en)
Japanese (ja)
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JPH11507178A (ja
JPH11507178A5 (enExample
Inventor
ロジャー ティモシー カーリン
ディヴィッド ジョン ロビンス
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Qinetiq Ltd
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Qinetiq Ltd
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Publication date
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Publication of JPH11507178A publication Critical patent/JPH11507178A/ja
Publication of JPH11507178A5 publication Critical patent/JPH11507178A5/ja
Application granted granted Critical
Publication of JP4137999B2 publication Critical patent/JP4137999B2/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • H10F77/1465—Superlattices; Multiple quantum well structures including only Group IV materials, e.g. Si-SiGe superlattices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors

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  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Light Receiving Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Spectrometry And Color Measurement (AREA)
JP50022197A 1995-06-05 1996-06-04 反射性半導体基板 Expired - Lifetime JP4137999B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB9511336.1A GB9511336D0 (en) 1995-06-05 1995-06-05 Reflecting semiconductor substrates
GB9511336.1 1995-06-05
PCT/GB1996/001324 WO1996039719A1 (en) 1995-06-05 1996-06-04 Reflecting semiconductor substrates

Publications (3)

Publication Number Publication Date
JPH11507178A JPH11507178A (ja) 1999-06-22
JPH11507178A5 JPH11507178A5 (enExample) 2004-07-22
JP4137999B2 true JP4137999B2 (ja) 2008-08-20

Family

ID=10775524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50022197A Expired - Lifetime JP4137999B2 (ja) 1995-06-05 1996-06-04 反射性半導体基板

Country Status (9)

Country Link
US (1) US6111266A (enExample)
EP (1) EP0834198B1 (enExample)
JP (1) JP4137999B2 (enExample)
KR (1) KR100444638B1 (enExample)
AU (1) AU5905696A (enExample)
CA (1) CA2219141C (enExample)
DE (1) DE69620177T2 (enExample)
GB (2) GB9511336D0 (enExample)
WO (1) WO1996039719A1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19723177A1 (de) 1997-06-03 1998-12-10 Daimler Benz Ag Spannungsgesteuerter wellenlängenselektiver Photodetektor
US6423984B1 (en) * 1998-09-10 2002-07-23 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride compound semiconductor
WO2000067891A2 (en) 1999-05-06 2000-11-16 Trustees Of Boston University Reflective layer buried in silicon and method of fabrication
US6561693B1 (en) * 2000-09-21 2003-05-13 Lockheed Martin Corporation Remote temperature sensing long wave length modulated focal plane array
US6498336B1 (en) * 2000-11-15 2002-12-24 Pixim, Inc. Integrated light sensors with back reflectors for increased quantum efficiency
US7501303B2 (en) 2001-11-05 2009-03-10 The Trustees Of Boston University Reflective layer buried in silicon and method of fabrication
FR2833757B1 (fr) * 2001-12-13 2004-11-05 Commissariat Energie Atomique Dispositif d'emission de lumiere et procede de fabrication d'un tel dispositif
WO2006044983A2 (en) * 2004-10-20 2006-04-27 Massachusetts Institute Of Technology Multi-spectral pixel and focal plane array
KR100664988B1 (ko) * 2004-11-04 2007-01-09 삼성전기주식회사 광추출효율이 향상된 반도체 발광소자
US7279380B2 (en) * 2004-11-10 2007-10-09 Macronix International Co., Ltd. Method of forming a chalcogenide memory cell having an ultrasmall cross-sectional area and a chalcogenide memory cell produced by the method
US20080179636A1 (en) * 2007-01-27 2008-07-31 International Business Machines Corporation N-fets with tensilely strained semiconductor channels, and method for fabricating same using buried pseudomorphic layers
US20090078316A1 (en) * 2007-09-24 2009-03-26 Qualcomm Incorporated Interferometric photovoltaic cell
US9362428B2 (en) 2012-11-27 2016-06-07 Artilux, Inc. Photonic lock based high bandwidth photodetector
US10388806B2 (en) 2012-12-10 2019-08-20 Artilux, Inc. Photonic lock based high bandwidth photodetector
US10916669B2 (en) 2012-12-10 2021-02-09 Artilux, Inc. Photonic lock based high bandwidth photodetector
EP3723140B1 (en) * 2013-12-28 2023-09-20 Artilux Inc. Photonic lock based high bandwidth photodetector
US10644187B2 (en) 2015-07-24 2020-05-05 Artilux, Inc. Multi-wafer based light absorption apparatus and applications thereof
CN107393984B (zh) * 2017-06-27 2019-08-20 上海集成电路研发中心有限公司 一种提高光吸收率的量子阱红外探测器及其制作方法
US10892295B2 (en) 2018-01-10 2021-01-12 Microsoft Technology Licensing, Llc Germanium-modified, back-side illuminated optical sensor
KR102642657B1 (ko) * 2019-07-01 2024-02-29 후지필름 가부시키가이샤 광검출 소자, 광검출 소자의 제조 방법 및 이미지 센서
DE102020201998B4 (de) 2020-02-18 2024-02-22 Eagleburgmann Germany Gmbh & Co. Kg Spalttopf mit integrierter Kühlung oder Heizung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5315128A (en) * 1993-04-30 1994-05-24 At&T Bell Laboratories Photodetector with a resonant cavity

Also Published As

Publication number Publication date
CA2219141A1 (en) 1996-12-12
EP0834198A1 (en) 1998-04-08
KR19990022379A (ko) 1999-03-25
GB2314684B (en) 1999-12-01
GB9511336D0 (en) 1995-08-02
US6111266A (en) 2000-08-29
AU5905696A (en) 1996-12-24
DE69620177T2 (de) 2002-10-31
WO1996039719A1 (en) 1996-12-12
JPH11507178A (ja) 1999-06-22
GB2314684A (en) 1998-01-07
GB9721332D0 (en) 1997-12-10
CA2219141C (en) 2007-08-07
KR100444638B1 (ko) 2004-12-30
EP0834198B1 (en) 2002-03-27
DE69620177D1 (de) 2002-05-02

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