DE69620177T2 - Reflektierende halbleitersubstrate - Google Patents
Reflektierende halbleitersubstrateInfo
- Publication number
- DE69620177T2 DE69620177T2 DE69620177T DE69620177T DE69620177T2 DE 69620177 T2 DE69620177 T2 DE 69620177T2 DE 69620177 T DE69620177 T DE 69620177T DE 69620177 T DE69620177 T DE 69620177T DE 69620177 T2 DE69620177 T2 DE 69620177T2
- Authority
- DE
- Germany
- Prior art keywords
- wavelength
- resonator
- layers
- cavity
- reflector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title claims description 30
- 239000004065 semiconductor Substances 0.000 title claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 83
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 230000005855 radiation Effects 0.000 claims description 21
- 230000005684 electric field Effects 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 16
- 230000008033 biological extinction Effects 0.000 claims description 7
- 230000005670 electromagnetic radiation Effects 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 68
- 239000000377 silicon dioxide Substances 0.000 description 41
- 235000012239 silicon dioxide Nutrition 0.000 description 41
- 229910052681 coesite Inorganic materials 0.000 description 40
- 229910052906 cristobalite Inorganic materials 0.000 description 40
- 229910052682 stishovite Inorganic materials 0.000 description 40
- 229910052905 tridymite Inorganic materials 0.000 description 40
- 229910052710 silicon Inorganic materials 0.000 description 25
- 239000010703 silicon Substances 0.000 description 21
- 238000010521 absorption reaction Methods 0.000 description 16
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 12
- 230000003595 spectral effect Effects 0.000 description 12
- 238000001228 spectrum Methods 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 239000000523 sample Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 239000003570 air Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000003491 array Methods 0.000 description 5
- 230000001419 dependent effect Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000003321 amplification Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000003534 oscillatory effect Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 230000005457 Black-body radiation Effects 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910008310 Si—Ge Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000013068 control sample Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/146—Superlattices; Multiple quantum well structures
- H10F77/1465—Superlattices; Multiple quantum well structures including only Group IV materials, e.g. Si-SiGe superlattices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
Landscapes
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Biophysics (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Light Receiving Elements (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Spectrometry And Color Measurement (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB9511336.1A GB9511336D0 (en) | 1995-06-05 | 1995-06-05 | Reflecting semiconductor substrates |
| PCT/GB1996/001324 WO1996039719A1 (en) | 1995-06-05 | 1996-06-04 | Reflecting semiconductor substrates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69620177D1 DE69620177D1 (de) | 2002-05-02 |
| DE69620177T2 true DE69620177T2 (de) | 2002-10-31 |
Family
ID=10775524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69620177T Expired - Lifetime DE69620177T2 (de) | 1995-06-05 | 1996-06-04 | Reflektierende halbleitersubstrate |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6111266A (enExample) |
| EP (1) | EP0834198B1 (enExample) |
| JP (1) | JP4137999B2 (enExample) |
| KR (1) | KR100444638B1 (enExample) |
| AU (1) | AU5905696A (enExample) |
| CA (1) | CA2219141C (enExample) |
| DE (1) | DE69620177T2 (enExample) |
| GB (2) | GB9511336D0 (enExample) |
| WO (1) | WO1996039719A1 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19723177A1 (de) | 1997-06-03 | 1998-12-10 | Daimler Benz Ag | Spannungsgesteuerter wellenlängenselektiver Photodetektor |
| US6423984B1 (en) * | 1998-09-10 | 2002-07-23 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride compound semiconductor |
| WO2000067891A2 (en) | 1999-05-06 | 2000-11-16 | Trustees Of Boston University | Reflective layer buried in silicon and method of fabrication |
| US6561693B1 (en) * | 2000-09-21 | 2003-05-13 | Lockheed Martin Corporation | Remote temperature sensing long wave length modulated focal plane array |
| US6498336B1 (en) * | 2000-11-15 | 2002-12-24 | Pixim, Inc. | Integrated light sensors with back reflectors for increased quantum efficiency |
| US7501303B2 (en) | 2001-11-05 | 2009-03-10 | The Trustees Of Boston University | Reflective layer buried in silicon and method of fabrication |
| FR2833757B1 (fr) * | 2001-12-13 | 2004-11-05 | Commissariat Energie Atomique | Dispositif d'emission de lumiere et procede de fabrication d'un tel dispositif |
| WO2006044983A2 (en) * | 2004-10-20 | 2006-04-27 | Massachusetts Institute Of Technology | Multi-spectral pixel and focal plane array |
| KR100664988B1 (ko) * | 2004-11-04 | 2007-01-09 | 삼성전기주식회사 | 광추출효율이 향상된 반도체 발광소자 |
| US7279380B2 (en) * | 2004-11-10 | 2007-10-09 | Macronix International Co., Ltd. | Method of forming a chalcogenide memory cell having an ultrasmall cross-sectional area and a chalcogenide memory cell produced by the method |
| US20080179636A1 (en) * | 2007-01-27 | 2008-07-31 | International Business Machines Corporation | N-fets with tensilely strained semiconductor channels, and method for fabricating same using buried pseudomorphic layers |
| US20090078316A1 (en) * | 2007-09-24 | 2009-03-26 | Qualcomm Incorporated | Interferometric photovoltaic cell |
| US9362428B2 (en) | 2012-11-27 | 2016-06-07 | Artilux, Inc. | Photonic lock based high bandwidth photodetector |
| US10388806B2 (en) | 2012-12-10 | 2019-08-20 | Artilux, Inc. | Photonic lock based high bandwidth photodetector |
| US10916669B2 (en) | 2012-12-10 | 2021-02-09 | Artilux, Inc. | Photonic lock based high bandwidth photodetector |
| EP3723140B1 (en) * | 2013-12-28 | 2023-09-20 | Artilux Inc. | Photonic lock based high bandwidth photodetector |
| US10644187B2 (en) | 2015-07-24 | 2020-05-05 | Artilux, Inc. | Multi-wafer based light absorption apparatus and applications thereof |
| CN107393984B (zh) * | 2017-06-27 | 2019-08-20 | 上海集成电路研发中心有限公司 | 一种提高光吸收率的量子阱红外探测器及其制作方法 |
| US10892295B2 (en) | 2018-01-10 | 2021-01-12 | Microsoft Technology Licensing, Llc | Germanium-modified, back-side illuminated optical sensor |
| KR102642657B1 (ko) * | 2019-07-01 | 2024-02-29 | 후지필름 가부시키가이샤 | 광검출 소자, 광검출 소자의 제조 방법 및 이미지 센서 |
| DE102020201998B4 (de) | 2020-02-18 | 2024-02-22 | Eagleburgmann Germany Gmbh & Co. Kg | Spalttopf mit integrierter Kühlung oder Heizung |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5315128A (en) * | 1993-04-30 | 1994-05-24 | At&T Bell Laboratories | Photodetector with a resonant cavity |
-
1995
- 1995-06-05 GB GBGB9511336.1A patent/GB9511336D0/en active Pending
-
1996
- 1996-06-04 GB GB9721332A patent/GB2314684B/en not_active Expired - Fee Related
- 1996-06-04 CA CA002219141A patent/CA2219141C/en not_active Expired - Fee Related
- 1996-06-04 AU AU59056/96A patent/AU5905696A/en not_active Abandoned
- 1996-06-04 DE DE69620177T patent/DE69620177T2/de not_active Expired - Lifetime
- 1996-06-04 WO PCT/GB1996/001324 patent/WO1996039719A1/en not_active Ceased
- 1996-06-04 KR KR1019970708859A patent/KR100444638B1/ko not_active Expired - Fee Related
- 1996-06-04 US US08/952,006 patent/US6111266A/en not_active Expired - Lifetime
- 1996-06-04 EP EP96916229A patent/EP0834198B1/en not_active Expired - Lifetime
- 1996-06-04 JP JP50022197A patent/JP4137999B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CA2219141A1 (en) | 1996-12-12 |
| EP0834198A1 (en) | 1998-04-08 |
| KR19990022379A (ko) | 1999-03-25 |
| GB2314684B (en) | 1999-12-01 |
| GB9511336D0 (en) | 1995-08-02 |
| US6111266A (en) | 2000-08-29 |
| AU5905696A (en) | 1996-12-24 |
| WO1996039719A1 (en) | 1996-12-12 |
| JPH11507178A (ja) | 1999-06-22 |
| GB2314684A (en) | 1998-01-07 |
| JP4137999B2 (ja) | 2008-08-20 |
| GB9721332D0 (en) | 1997-12-10 |
| CA2219141C (en) | 2007-08-07 |
| KR100444638B1 (ko) | 2004-12-30 |
| EP0834198B1 (en) | 2002-03-27 |
| DE69620177D1 (de) | 2002-05-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |