JPH1140787A - Manufacture of solid-state image pick-up element - Google Patents
Manufacture of solid-state image pick-up elementInfo
- Publication number
- JPH1140787A JPH1140787A JP9189353A JP18935397A JPH1140787A JP H1140787 A JPH1140787 A JP H1140787A JP 9189353 A JP9189353 A JP 9189353A JP 18935397 A JP18935397 A JP 18935397A JP H1140787 A JPH1140787 A JP H1140787A
- Authority
- JP
- Japan
- Prior art keywords
- film
- transparent material
- lens
- forming
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、集光効率を高めた
固体撮像素子の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a solid-state imaging device with improved light-collecting efficiency.
【０００２】[0002]
【従来の技術】固体撮像素子の微細化に伴い、特に１／
４”３８万画素より小さいデバイスなどではその感度向
上が必須となってきている。このような背景のもとに従
来では、カラーフィルタ上にオンチップレンズを設け、
集光効率を高めるといった工夫がなされている。2. Description of the Related Art With the miniaturization of solid-state imaging devices, in particular, 1 /
For devices smaller than 4 ″ 380,000 pixels, it is essential to improve the sensitivity. Under such a background, conventionally, an on-chip lens is provided on a color filter,
Some measures have been taken to increase the light collection efficiency.
【０００３】ところが、近年においてはデバイスの小型
化、高感度化に伴ってさらなる集光効率の向上が望まれ
ているものの、前述したオンチップレンズによる集光効
果はほぼ限界に近づいており、オンチップレンズとは別
の新たな技術の開発が望まれている。However, in recent years, further improvement in light-collecting efficiency has been desired with the miniaturization and higher sensitivity of devices, but the light-collecting effect of the above-described on-chip lens has almost reached its limit. Development of a new technology different from a chip lens is desired.
【０００４】このような要望に対応する技術として、オ
ンチップレンズと併用する状態で層内レンズを設ける技
術が一部に提案されている。この層内レンズは、光電変
換をなす受光部の直上において層間膜中に形成されるレ
ンズであり、オンチップレンズと同様にこの層内レンズ
に入射した光を該層内レンズの上面側または下面側の界
面で屈折させ、受光部に導くものである。したがって、
このような層間レンズを前記オンチップレンズと併用す
ることにより、オンチップレンズで集光されて入射した
光を再度層内レンズで集光することができ、これにより
固体撮像素子全体としての集光効率をより高めることが
できるのである。As a technique for responding to such a demand, a technique for providing an inner lens in a state of being used together with an on-chip lens has been proposed in part. The in-layer lens is a lens formed in the interlayer film immediately above the light-receiving portion that performs photoelectric conversion. Like the on-chip lens, the light incident on the in-layer lens is on the upper surface side or the lower surface of the in-layer lens. The light is refracted at the interface on the side and guided to the light receiving section. Therefore,
By using such an interlayer lens together with the on-chip lens, the light condensed by the on-chip lens and incident can be condensed again by the inner-layer lens, thereby condensing the entire solid-state imaging device. Efficiency can be further improved.
【０００５】[0005]
【発明が解決しようとする課題】ところが、従来提案さ
れている層内レンズはほとんどが凹型のレンズであり、
これを形成する場合、遮光膜の上にＢＰＳＧ（ホウ素リ
ンシリケートガラス）等のリフロー形状をもつ膜を形成
し、転送電極間、すなわち受光部の直上に形成されたく
ぼみの中に高屈折率材を埋め込み、この埋め込んだ高屈
折率材を層内レンズとする、といったプロセスを採るの
が普通である。しかして、このプロセスでは層内レンズ
の形状がリフロー膜の形状で決まってしまうことから、
所望の形状、すなわち集光に最適な形状を得るのが困難
であり、したがって層内レンズを設けたとはいえ未だ十
分に高い集光効率を得るのが困難である。However, most of the conventionally proposed inner lenses are concave lenses.
When this is formed, a film having a reflow shape such as BPSG (boron phosphorus silicate glass) is formed on the light-shielding film, and a high refractive index material is formed between the transfer electrodes, that is, in the recess formed immediately above the light receiving portion. It is common to adopt a process of embedding a high refractive index material into an inner layer lens. In this process, the shape of the inner lens is determined by the shape of the reflow film.
It is difficult to obtain a desired shape, that is, an optimum shape for light collection. Therefore, it is difficult to obtain a sufficiently high light collection efficiency even though the in-layer lens is provided.
【０００６】本発明は前記事情に鑑みてなされたもの
で、その目的とするところは、集光効率向上を図るべ
く、層間レンズを所望する形状に形成し得るようにした
固体撮像装置の製造方法を提供することにある。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a method of manufacturing a solid-state imaging device in which an interlayer lens can be formed in a desired shape in order to improve light-collecting efficiency. Is to provide.
【０００７】[0007]
【課題を解決するための手段】本発明の固体撮像装置で
は、基体表層部に形成されて光電変換をなす受光部と、
該受光部から読み出された電荷を転送する電荷転送部
と、前記基体上の、前記電荷転送部の略直上位置に絶縁
膜を介して設けられた転送電極とを備えた固体撮像素子
を製造するに際して、前記転送電極を覆って第１平坦化
膜を形成し、次に前記第１平坦化膜上にプラズマＣＶＤ
法によって透明材料を成膜し、次いで前記透明材料から
なる膜をパターニングして該透明材料を、前記受光部の
直上において上に凸となる凸レンズ状の層内レンズと
し、次いで前記層内レンズを覆って第２平坦化膜を形成
し、その後前記第２平坦化膜上における前記受光部の直
上にオンチップレンズを形成することを前記課題の解決
手段とした。According to the present invention, there is provided a solid-state imaging device, comprising: a light-receiving portion formed on a surface layer of a substrate to perform photoelectric conversion;
A solid-state imaging device including: a charge transfer unit configured to transfer charges read from the light receiving unit; and a transfer electrode provided on the substrate at a position substantially directly above the charge transfer unit via an insulating film. Forming a first planarization film covering the transfer electrode, and then performing plasma CVD on the first planarization film.
A transparent material is formed by a method, and then the film made of the transparent material is patterned to form the transparent material into a convex lens-shaped inner lens that is upwardly convex immediately above the light receiving unit, and then the inner lens is formed. Forming a second planarizing film so as to cover, and then forming an on-chip lens on the second planarizing film directly above the light receiving section is a means for solving the problem.
【０００８】この固体撮像装置の製造方法によれば、第
１平坦化膜上にプラズマＣＶＤ法で透明材料を成膜し、
さらに得られた透明材料膜をパターニングすることによ
って層内レンズを形成するので、下地である第１平坦化
膜の表面がもちろん平坦であることによってこの下地に
依存することなく層内レンズを所望形状に形成すること
が可能になり、また、透明材料についてもプラズマＣＶ
Ｄ法で堆積して成膜することから種々の材料を選択する
ことが可能になって屈折率を任意に設定することが可能
になる。According to the method of manufacturing a solid-state imaging device, a transparent material is formed on the first planarization film by a plasma CVD method.
Further, since the inner lens is formed by patterning the obtained transparent material film, the surface of the first flattening film, which is the base, is of course flat, so that the inner lens can have the desired shape without depending on the base. , And transparent CV
Since the film is deposited by the method D, various materials can be selected, and the refractive index can be arbitrarily set.
【０００９】なお、透明材料からなる膜をパターニング
して層内レンズを形成するにあたっては、透明材料膜上
にレジスト層を形成し、続いて該レジスト層を上に凸と
なる凸レンズ形状にパターニングし、その後得られた凸
レンズ形状のパターンをマスクとして、該レジストと前
記透明材料との選択比がほぼ１となる条件で前記透明材
料膜をエッチングし、層内レンズを形成するのが好まし
く、このように選択比がほぼ１となる条件で前記透明材
料膜をエッチングすることにより、得られる層内レンズ
をレジストのパターンとほぼ同一の形状にすることがで
き、したがって層内レンズの形状を所望する形状に形成
し易くなる。In forming an inner lens by patterning a film made of a transparent material, a resist layer is formed on the transparent material film, and then the resist layer is patterned into a convex lens shape having an upward convexity. It is preferable to form the inner lens by etching the transparent material film under the condition that the selectivity between the resist and the transparent material is approximately 1, using the obtained convex lens shape pattern as a mask. By etching the transparent material film under the condition that the selectivity becomes substantially 1, the obtained inner lens can be made to have almost the same shape as the resist pattern. It becomes easy to form.
【００１０】[0010]
【発明の実施の形態】以下、本発明を詳しく説明する。
図１（ａ）〜（ｃ）、図２（ａ）〜（ｃ）は本発明の固
体撮像素子の製造方法の一実施形態例を説明するための
図であり、これらの図において符号１はシリコン基板
（基体）である。この例では、図１（ａ）に示すよう
に、従来と同様にしてシリコン基板１の表層部に受光部
２、電荷転送部３、チャネルストップ（図示略）、読み
出し部（図示略）をそれぞれ形成するとともに、シリコ
ン基板１表面に絶縁膜４を形成し、さらに該絶縁膜４上
に転送電極５、層間膜絶縁６、遮光膜７を形成する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail.
FIGS. 1A to 1C and 2A to 2C are views for explaining an embodiment of a method for manufacturing a solid-state imaging device according to the present invention. It is a silicon substrate (base). In this example, as shown in FIG. 1A, a light receiving unit 2, a charge transfer unit 3, a channel stop (not shown), and a readout unit (not shown) are respectively provided on the surface layer of a silicon substrate 1 in the same manner as in the related art. At the same time, an insulating film 4 is formed on the surface of the silicon substrate 1, and a transfer electrode 5, an interlayer insulating film 6, and a light shielding film 7 are formed on the insulating film 4.
【００１１】具体的には、まずシリコン基板１中にイオ
ン注入等によって不純物を注入しさらにこれを拡散さ
せ、電荷転送部３、チャネルストップ（図示略）、読み
出し部（図示略）をそれぞれ形成する。次に、熱酸化法
やＣＶＤ法によってシリコン基板１表面にＳｉＯ2 から
なる絶縁膜４を形成する。なお、この絶縁膜４について
は、ＳｉＯ2 からなる構造に代えてＯＮＯ（ＳｉＯ2 −
ＳｉＮ−ＳｉＯ2 ）構造としてもよい。More specifically, first, impurities are implanted into the silicon substrate 1 by ion implantation or the like, and the impurities are diffused to form a charge transfer section 3, a channel stop (not shown), and a reading section (not shown). . Next, an insulating film 4 made of SiO 2 is formed on the surface of the silicon substrate 1 by a thermal oxidation method or a CVD method. Note that the insulating film 4, instead of the structure consisting of SiO 2 ONO (SiO 2 -
SiN-SiO 2) may have a structure.
【００１２】次に、ＣＶＤ法によりポリシリコンを成膜
し、さらにこのポリシリコン膜（図示略）を公知のレジ
スト技術、リソグラフィー技術、エッチング技術により
パターニングし、転送電極５を形成する。続いて、形成
した転送電極５をマスクにしてイオン注入等によって不
純物を注入しさらにこれを拡散させ、受光部２を自己整
合的に形成する。なお、この受光部２の形成について
は、前記の電荷転送部３、チャネルストップ、読み出し
部の形成時にこれらの形成に前後してあるいは同時に形
成してもよい。Next, a polysilicon film is formed by a CVD method, and this polysilicon film (not shown) is patterned by a known resist technique, lithography technique, and etching technique to form a transfer electrode 5. Subsequently, impurities are implanted by ion implantation or the like using the formed transfer electrode 5 as a mask and further diffused to form the light receiving section 2 in a self-aligned manner. The light receiving section 2 may be formed before or after the formation of the charge transfer section 3, the channel stop, and the readout section before or at the same time.
【００１３】次いで、ＣＶＤ法等により転送電極５を覆
った状態にＳｉＯ2 等からなる層間膜絶縁６を形成す
る。なお、この転送電極４の形成については、転送電極
構造が二層である場合には前記工程を２回繰り返し、三
層以上である場合にはその層数分だけ繰り返す。Next, an interlayer insulating film 6 made of SiO 2 or the like is formed so as to cover the transfer electrode 5 by a CVD method or the like. When the transfer electrode 4 has two layers, the above steps are repeated twice. When the transfer electrode 4 has three or more layers, the number of layers is repeated.
【００１４】次いで、アルミニウムやアルミニウム合
金、あるいはＴｉやＷなどの高融点金属をスパッタ法に
よって単層あるいは複層成膜する。そして、リソグラフ
ィー技術、エッチング技術によって得られた膜に配線用
の開口（図示略）や受光部２の直上位置の一部開口など
必要なパターニングを施すことにより、遮光膜７および
その開口部７ａを形成する。なお、この遮光膜７の材料
については、この後に形成する第１平坦化膜のリフロー
条件に応じて選択される。すなわち、リフロー条件とし
て高温加熱が必要な場合には、遮光膜７の材料としてＴ
ｉやＷなどの高融点金属が用いられ、高温加熱が必要で
ない場合にはアルミニウム等が用いられる。Next, a single layer or multiple layers of a high melting point metal such as aluminum or aluminum alloy or Ti or W is formed by sputtering. The light-shielding film 7 and its opening 7a are formed by subjecting the film obtained by the lithography technique and the etching technique to necessary patterning such as an opening for wiring (not shown) and a partial opening immediately above the light receiving section 2. Form. The material of the light-shielding film 7 is selected according to the reflow condition of the first flattening film to be formed later. That is, when high-temperature heating is required as a reflow condition, T
A high melting point metal such as i or W is used, and aluminum or the like is used when high-temperature heating is not required.
【００１５】次いで、ＢＰＳＧ（ホウ素リンシリケート
ガラス）膜あるいはＨＤＰ ＣＶＤ膜等を形成し、さら
にこれにリフロー処理等を施すことによって平坦化し、
図１（ｂ）に示すように第１平坦化膜８を形成する。な
お、この例においては、第１平坦化膜８を屈折率が１．
４７のＢＰＳＧ膜から形成した。したがって、このＢＰ
ＳＧ膜のリフロー処理には高温加熱が必要でないため、
前記遮光膜７についてはその材料としてアルミニウムを
用いている。Next, a BPSG (boron phosphorus silicate glass) film or an HDP CVD film or the like is formed, and the film is flattened by performing a reflow process or the like.
As shown in FIG. 1B, a first planarizing film 8 is formed. In this example, the first flattening film 8 has a refractive index of 1.
47 BPSG films. Therefore, this BP
Since high temperature heating is not required for reflow treatment of SG film,
The light shielding film 7 is made of aluminum.
【００１６】このようにして第１平坦化膜８を形成した
ら周辺部の配線（図示略）を形成し、その後、該第１平
坦化膜８上に後述する層内レンズの材料となる透明材料
をプラズマＣＶＤ法によって成膜し、図１（ｃ）に示す
ように透明材料膜９を形成する。ここで、透明材料膜９
の形成については、半導体プロセスなどにおいて一般的
に用いられるプラズマＣＶＤ法で行うことから、屈折率
の異なる種々の材料を用いて成膜するとができる。After the first flattening film 8 is formed in this manner, peripheral wiring (not shown) is formed, and then a transparent material, which will be described later as a material of an in-layer lens, is formed on the first flattening film 8. Is formed by a plasma CVD method, and a transparent material film 9 is formed as shown in FIG. Here, the transparent material film 9
Is formed by a plasma CVD method generally used in a semiconductor process or the like, and thus can be formed using various materials having different refractive indexes.
【００１７】換言すれば、前記第１平坦化膜８の屈折率
や後述する第２平坦化膜の屈折率との差を考慮して、受
光部２への集光効率を高めるうえでこれら第１平坦化膜
８あるいは第２平坦化膜との間で最適な屈折率差が得ら
れるような屈折率の材料を選択することができる。例え
ば、屈折率を１．９〜２．０としたい場合にはＰ−ＳＩ
Ｎ膜（プラズマ窒化膜）を選択し、屈折率を１．５〜
１．９としたい場合にはＰ−ＳｉＯＮ膜（プラズマ酸化
窒化膜）を選択すればよい。また、この透明材料膜９に
ついては、形成する層内レンズの高さに合わせてその膜
厚を決めるのがプロセス上無駄がなく有利であり、具体
的には０．５〜２．０μｍ程度とするのが好ましい。な
お、この実施形態例においては、屈折率が１．９〜２．
０となるよう、Ｐ−ＳＩＮを成膜することによって透明
材料膜９を形成した。In other words, considering the difference between the refractive index of the first flattening film 8 and the refractive index of the second flattening film, which will be described later, in order to increase the light-collecting efficiency to the light receiving section 2, these second flattening films 8 are used. It is possible to select a material having a refractive index such that an optimum refractive index difference is obtained between the first flattening film 8 and the second flattening film. For example, if the refractive index is desired to be 1.9 to 2.0, P-SI
Select the N film (plasma nitride film) and set the refractive index to 1.5 to
If 1.9 is desired, a P-SiON film (plasma oxynitride film) may be selected. Further, it is advantageous that the thickness of the transparent material film 9 is determined according to the height of the inner lens to be formed without waste in the process. Specifically, the thickness is about 0.5 to 2.0 μm. Is preferred. In this embodiment, the refractive index is 1.9 to 2.0.
The transparent material film 9 was formed by forming P-SIN so as to be 0.
【００１８】次いで、この透明材料膜９の上にレジスト
を塗布してレジスト層を形成し、さらにこれをパターニ
ングして図２（ａ）に示すように上に凸となる凸レンズ
形状のレジストパターン１０を形成する。このレジスト
パターン１０の形成にあたっては、まず、エッチングに
よりレジスト層を各受光部２毎に平面視した状態で矩形
状もしくは正方形状に分割する。そして、このように分
割したレジスト層を１４０℃〜１８０℃程度の温度でリ
フロー処理し、各レジスト層を一旦溶融させた後固化さ
せて該レジスト層を上に凸の球面状となる凸レンズ形状
にパターニングし、レジストパターン１０を得る。な
お、レジストの種類については特に限定されないもの
の、後述するように透明材料膜９との間でほぼ１の選択
比がとれる材質のものがより好適に用いられる。Next, a resist is applied on the transparent material film 9 to form a resist layer, which is further patterned to form a resist pattern 10 having a convex lens shape having an upward convex as shown in FIG. To form In forming the resist pattern 10, first, the resist layer is divided into a rectangular shape or a square shape by etching in a state where each light receiving portion 2 is viewed in plan. Then, the resist layer thus divided is subjected to a reflow treatment at a temperature of about 140 ° C. to 180 ° C., and the respective resist layers are once melted and solidified to form the resist layer into a convex lens shape having an upwardly convex spherical shape. By patterning, a resist pattern 10 is obtained. The type of the resist is not particularly limited, but a material having a selectivity of approximately 1 with the transparent material film 9 as described later is more preferably used.
【００１９】このようにしてレジストパターン１０を形
成したら、これをマスクにして前記透明材料膜９をエッ
チングする。このとき、エッチング条件については、該
レジストパターン１０と透明材料膜９との選択比がほぼ
１となる条件で行うのが好ましく、具体的には、平行平
板ＲＩＥにより、反応ガスとしてＳＦ6 ／Ｏ2 （＝４０
／４０ｃｃｍ）を用い、圧力３５Ｐａ、ＲＦパワー４５
０Ｗで行う。このように選択比がほぼ１となる条件で透
明材料膜９のエッチングを行うと、図２（ｂ）に示すよ
うにレジストパターン１０とほぼ同一形状の層内レンズ
１１を形成することができる。After the resist pattern 10 is formed in this manner, the transparent material film 9 is etched using the resist pattern 10 as a mask. At this time, it is preferable that the etching is performed under the condition that the selectivity between the resist pattern 10 and the transparent material film 9 becomes substantially 1. Specifically, the parallel plate RIE is performed to obtain SF 6 / O as a reaction gas. 2 (= 40
/ 40ccm), pressure 35Pa, RF power 45
Perform at 0W. When the transparent material film 9 is etched under the condition that the selectivity is substantially 1, an inner lens 11 having substantially the same shape as the resist pattern 10 can be formed as shown in FIG. 2B.
【００２０】次いで、図２（ｃ）に示すように得られた
層内レンズ１１を覆って第１平坦化膜８上に第２平坦化
膜１２を形成する。この第２平坦化膜１２については、
アクリル系樹脂（屈折率；約１．６０）やポリイミド系
樹脂（屈折率；約１．８０）などが用いられるが、特に
層内レンズ１１との間の屈折率差を考慮して、集光効率
の点で有利となるように材料が選択される。その後、第
２平坦化膜１２の上に従来と同様にしてカラーフィルタ
１３を形成し、さらにこのカラーフィルタ１３の上にポ
リスチレン（屈折率；約１．６０）等からなるオンチッ
プレンズ１４を従来と同様にして形成し、これにより固
体撮像素子１５を得る。Next, as shown in FIG. 2C, a second planarizing film 12 is formed on the first planarizing film 8 so as to cover the inner lens 11 obtained. Regarding the second planarizing film 12,
Acrylic resin (refractive index: about 1.60), polyimide resin (refractive index: about 1.80), or the like is used. The materials are selected to be advantageous in terms of efficiency. Thereafter, a color filter 13 is formed on the second flattening film 12 in the same manner as in the related art, and an on-chip lens 14 made of polystyrene (refractive index: about 1.60) is formed on the color filter 13 in the related art. Thus, the solid-state imaging device 15 is obtained.
【００２１】このような固体撮像素子１５の製造方法に
あっては、第１平坦化膜８上にプラズマＣＶＤ法で透明
材料膜９を形成し、これをパターニングすることによっ
て層内レンズ１１を形成するので、下地である第１平坦
化膜８の表面がもちろん平坦であることによってこの下
地に依存することなく層内レンズ１１を所望形状に形成
することができる。また、透明材料についても、プラズ
マＣＶＤ法で堆積して成膜することから種々の材料を選
択することができ、屈折率を任意に設定することができ
るなどその材料選択性の自由度や設計自由度を高めるこ
とができる。In the method of manufacturing such a solid-state image pickup device 15, a transparent material film 9 is formed on the first flattening film 8 by a plasma CVD method, and the transparent material film 9 is patterned to form an inner-layer lens 11. Therefore, since the surface of the first flattening film 8 serving as the base is of course flat, the inner lens 11 can be formed in a desired shape without depending on the base. Also, as for the transparent material, various materials can be selected because the film is deposited and deposited by the plasma CVD method, and the refractive index can be set arbitrarily. The degree can be increased.
【００２２】また、透明材料膜９をパターニングして層
内レンズ１１を形成する際、透明材料膜９上に凸レンズ
形状のレジストパターン１０を形成し、これをマスクに
して、該レジストと前記透明材料との選択比がほぼ１と
なる条件で透明材料膜９をエッチングしているので、得
られる層内レンズ１１をレジストパターン１０とほぼ同
一の形状にすることができ、したがって層内レンズ１１
の形状を所望する形状に容易に形成することができる。When forming the inner lens 11 by patterning the transparent material film 9, a resist pattern 10 having a convex lens shape is formed on the transparent material film 9, and the resist and the transparent material are used as masks. Since the transparent material film 9 is etched under the condition that the selectivity of the inner layer 11 is substantially 1, the obtained inner lens 11 can be made almost the same shape as the resist pattern 10, and therefore the inner lens 11 can be formed.
Can be easily formed into a desired shape.
【００２３】[0023]
【発明の効果】以上説明したように本発明の固体撮像素
子の製造方法は、第１平坦化膜上にプラズマＣＶＤ法で
透明材料を成膜し、さらに得られた透明材料膜をパター
ニングすることによって層内レンズを形成する方法であ
るから、下地である第１平坦化膜の表面が平坦であるこ
とによってこの下地に依存することなく層内レンズを所
望形状に形成することができる。また、透明材料につい
ても、プラズマＣＶＤ法で堆積して成膜することから種
々の材料を選択することができ、屈折率を任意に設定す
ることができるなどその材料選択性の自由度や設計自由
度を高めることができる。As described above, the method of manufacturing a solid-state imaging device according to the present invention comprises forming a transparent material on a first planarization film by a plasma CVD method and patterning the obtained transparent material film. Therefore, since the surface of the first flattening film serving as the base is flat, the inner lens can be formed in a desired shape without depending on the base. Also, as for the transparent material, various materials can be selected because the film is deposited and deposited by the plasma CVD method, and the refractive index can be set arbitrarily. The degree can be increased.
【００２４】また、透明材料膜をパターニングして層内
レンズを形成する際、透明材料膜上に凸レンズ形状のレ
ジストパターンを形成し、これをマスクにして、該レジ
ストと前記透明材料との選択比がほぼ１となる条件で透
明材料膜をエッチングすれば、得られる層内レンズをレ
ジストパターンとほぼ同一の形状にすることができ、し
たがって層内レンズの形状を所望する形状に容易に形成
することができる。When forming the inner layer lens by patterning the transparent material film, a resist pattern having a convex lens shape is formed on the transparent material film, and this is used as a mask to select the resist and the transparent material. If the transparent material film is etched under the condition that is approximately 1, the obtained inner lens can be made almost the same shape as the resist pattern, and therefore, the inner lens can be easily formed into a desired shape. Can be.
【図１】（ａ）〜（ｃ）は本発明の固体撮像装置の製造
方法の一実施形態例を工程順に説明するための要部側断
面図である。FIGS. 1A to 1C are cross-sectional views of a main part for describing an embodiment of a method for manufacturing a solid-state imaging device according to the present invention in the order of steps.
【図２】（ａ）〜（ｃ）は本発明の固体撮像装置の製造
方法の一実施形態例を説明するための図であり、図１
（ｃ）に示した工程に続く工程を工程順に示す要部側断
面図である。FIGS. 2A to 2C are views for explaining an embodiment of a method for manufacturing a solid-state imaging device according to the present invention, and FIGS.
FIG. 6 is a side sectional view of a main part showing steps subsequent to the step shown in FIG.
１…シリコン基板（基体）、２…受光部、３…電荷転送
部、４…絶縁膜、５…転送電極、８…第１平坦化膜、９
…透明材料膜、１０…レジストパターン、１１…層内レ
ンズ、１２…第２平坦化膜、１４…オンチップレンズ、
１５…固体撮像素子DESCRIPTION OF SYMBOLS 1 ... Silicon substrate (base), 2 ... Light receiving part, 3 ... Charge transfer part, 4 ... Insulating film, 5 ... Transfer electrode, 8 ... First planarization film, 9
... transparent material film, 10 ... resist pattern, 11 ... in-layer lens, 12 ... second planarization film, 14 ... on-chip lens,
15 ... Solid-state image sensor
Claims (2)
受光部と、該受光部から読み出された電荷を転送する電
荷転送部と、前記基体上の、前記電荷転送部の略直上位
置に絶縁膜を介して設けられた転送電極とを備えた固体
撮像素子の製造方法において、 前記転送電極を覆って第１平坦化膜を形成する工程と、 前記第１平坦化膜上にプラズマＣＶＤ法によって透明材
料を成膜する工程と、 前記透明材料からなる膜をパターニングして該透明材料
を、前記受光部の直上において上に凸となる凸レンズ状
の層内レンズとする工程と、 前記層内レンズを覆って第２平坦化膜を形成する工程
と、 前記第２平坦化膜上における前記受光部の直上にオンチ
ップレンズを形成する工程と、を備えたことを特徴とす
る固体撮像素子の製造方法。1. A light receiving unit formed on a surface layer of a base to perform photoelectric conversion, a charge transfer unit for transferring charges read from the light receiving unit, and a position on the base substantially directly above the charge transfer unit. A method for manufacturing a solid-state imaging device, comprising: a transfer electrode provided on a first insulating film; a step of forming a first planarization film covering the transfer electrode; and a plasma CVD method on the first planarization film. A step of forming a transparent material by a method, and a step of patterning the film made of the transparent material to form the transparent material into a convex lens-shaped inner lens that is upwardly convex immediately above the light receiving unit; A solid-state imaging device comprising: a step of forming a second planarization film covering the inner lens; and a step of forming an on-chip lens on the second planarization film immediately above the light receiving unit. Manufacturing method.
して層内レンズを形成する工程が、前記透明材料膜上に
レジスト層を形成する工程と、該レジスト層を上に凸と
なる凸レンズ形状にパターニングする工程と、得られた
凸レンズ形状のパターンをマスクとして、該レジストと
前記透明材料との選択比がほぼ１となる条件で前記透明
材料膜をエッチングし、層内レンズを形成する工程と、
からなることを特徴とする請求項１記載の固体撮像素子
の製造方法。2. The step of patterning a film made of the transparent material to form an intralayer lens includes the steps of forming a resist layer on the transparent material film, and forming the resist layer into a convex lens shape that is convex upward. Patterning, using the obtained convex lens-shaped pattern as a mask, etching the transparent material film under conditions that the selectivity between the resist and the transparent material is substantially 1, forming an in-layer lens;
2. The method for manufacturing a solid-state imaging device according to claim 1, comprising:
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|---|---|---|---|
| JP18935397A JP3809708B2 (en) | 1997-07-15 | 1997-07-15 | Solid-state imaging device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18935397A JP3809708B2 (en) | 1997-07-15 | 1997-07-15 | Solid-state imaging device and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| JPH1140787A true JPH1140787A (en) | 1999-02-12 |
| JP3809708B2 JP3809708B2 (en) | 2006-08-16 |
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ID=16239914
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18935397A Expired - Fee Related JP3809708B2 (en) | 1997-07-15 | 1997-07-15 | Solid-state imaging device and manufacturing method thereof |
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| Country | Link |
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