JP2007067212A - Solid-state imaging device and method of manufacturing same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device hardly coming under the influence of a displacement of a micro lens or an inner layer lens without causing a variation in sensitivity or a deterioration in smear. <P>SOLUTION: A light-guide-structured solid-state imaging device includes a photoelectric conversion part, and a charge transferring part having a charge transferring electrode for transferring a charge generated by the photoelectric conversion part. Further, the element includes a first light shielding film composed of a first electrode comprising a first layer conductive film with the charge transferring electrode alternately juxtaposed, a second electrode comprising a second layer conductive film, and the first light shielding film formed on the sidewall of the charge transferring electrode to compose the sidewall, and a second light shielding film having an opening part for forming the light guide on the photoelectric conversion part on the upper layer of the charge transferring electrode to constitute the light guide structure. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a solid-state imaging device and a method for manufacturing the same, and more particularly to a charge transfer electrode of a solid-state imaging device.

  A solid-state imaging device using a CCD used for an area sensor or the like includes a photoelectric conversion unit including a photodiode and a charge transfer unit including a charge transfer electrode for transferring a signal charge from the photoelectric conversion unit. . A plurality of charge transfer electrodes are arranged adjacent to each other on a charge transfer path formed on the semiconductor substrate, and are sequentially driven.

  In recent years, with the miniaturization of cameras, demands for higher resolution and higher sensitivity are increasing in solid-state imaging devices, and the number of imaging pixels is increasing to more than gigapixels.

  In order to improve the sensitivity, various structures have been proposed in which a microlens is provided on the pixel surface to increase the light collection efficiency to the photodiode.

  For example, as shown in FIG. 10, an intra-layer lens 20 that also serves as a passivation film is formed on the planarizing layer 10 immediately above the photodiode unit 30 constituting the photoelectric conversion unit, and further planarized on the upper layer. A structure in which a film (translucent film 22), a color filter 50, a planarization film 61, and an on-chip lens 60 are sequentially formed has been proposed (the charge transfer unit 40 and the photodiode unit 30 will be described later in an embodiment). To do).

  In such a structure, there is a problem in that the condensing position changes due to the displacement of the microlens or the in-layer lens, and the sensitivity varies due to vignetting or decreases. Further, the positional deviation of the light shielding film with respect to the opening of the photoelectric conversion part causes smear deterioration. Smear is a phenomenon in which when solid light is applied to a solid-state image sensor, light reaches the charge transfer section and charges are generated there. As a result, a band-shaped imaging defect appears on the screen. It is an important issue to cover the transfer part with a light shielding film and to firmly open the opening of the photoelectric conversion part.

  Accordingly, an object is to provide a solid-state imaging device with less smear and sensitivity variation, and a side wall of the charge transfer electrode is provided as a first light-shielding film, and the second and A configuration for forming a third light-shielding film has been proposed (Patent Document 1).

  In this method, the light shielding film on the electrode side wall is formed by self-alignment, so there is no sensitivity variation or smear deterioration due to misalignment, but there is a sensitivity variation or decrease due to vignetting due to the effect of misalignment of the microlens or intralayer lens. There is a problem that it is easy to occur and it is difficult to obtain a stable sensitivity.

JP-A-6-260629

As described above, in the conventional solid-state imaging device shown in FIG. 10, sensitivity variations and smear deterioration may occur due to the displacement of the sidewalls.
Further, the technique disclosed in Patent Document 1 does not cause smear deterioration, but there is a problem that when a microlens or an in-layer lens is formed, it is easily affected by these positional shifts.
The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a solid-state imaging device that is not easily affected by a positional shift of a microlens or an in-layer lens and that does not cause sensitivity variations or smear deterioration. And

  Accordingly, the present invention provides a solid-state imaging device having an optical waveguide structure including a photoelectric conversion unit and a charge transfer unit including a charge transfer electrode that transfers a charge generated in the photoelectric conversion unit. It is composed of a first electrode made of a first layer conductive film and a second electrode made of a second layer conductive film, which are arranged in parallel with each other, and formed on the side wall of the charge transfer electrode. A first light-shielding film constituting a sidewall is provided, and a second light-shielding film having an opening for forming an optical waveguide on the photoelectric conversion part is provided on the charge transfer electrode. To do.

  According to this configuration, since the first light-shielding film is formed on the side wall of the charge transfer electrode by self-alignment, there is no positional deviation, and it is possible to prevent sensitivity variations and smear deterioration, and the second light-shielding film. Provides a solid-state imaging device with a concentrating optical waveguide structure, which improves condensing performance, is not affected by the displacement of microlenses and in-layer lenses, and does not vary in sensitivity due to vignetting It becomes possible to do.

  The present invention includes the solid-state imaging device in which the second light shielding film is formed via a planarization film formed on the charge transfer unit.

  According to this configuration, since the second light-shielding film is formed on the planarizing film, the patterning accuracy can be increased and a highly accurate opening can be formed.

  According to the present invention, in the solid-state imaging device, the first and second light shielding films are formed through an insulating film and are electrically insulated and separated.

  According to this configuration, since the insulation separation between the first light shielding film and the second light shielding film is ensured, various electrical influences can be prevented.

  In the solid-state imaging device according to the present invention, the second light-shielding film is formed so that the opening has an inverted truncated cone shape with a diameter increasing toward the top on the photoelectric conversion unit, Includes those whose surface forms a reflective surface.

  According to this configuration, an optical waveguide structure with high light collection efficiency can be formed by capturing a large amount of light from above with a large opening and reflecting it well on the reflecting surface.

  The present invention includes the solid-state imaging device in which the opening is filled with a translucent material.

  According to this configuration, since the light-transmitting material is filled in the opening, a large amount of light can be taken in and an optical waveguide structure with high light collection efficiency can be formed.

  The present invention includes the solid-state imaging device, wherein the light-transmitting material is an organic material.

  According to this configuration, low temperature formation is possible.

  The present invention includes the solid-state imaging device in which the opening is filled with a color filter material to form a color filter.

  According to this configuration, it is not necessary to provide a separate filter layer, and the thickness can be further reduced. Since the filter is formed only at the light collecting portion, the light that is efficiently condensed is selectively wavelength-selected. Since they are adjusted and surrounded by the second light-shielding film one by one, color mixing can be prevented.

  The present invention includes the solid-state imaging device in which the opening is filled with a fluorescent agent.

  According to this configuration, it is not necessary to provide a separate phosphor layer, and the thickness can be further reduced. Since the phosphor is formed only in the light condensing part, the fluorescent light corresponding to the amount of light that has been efficiently collected. Can be made to emit light, and high sensitivity can be achieved. Further, since each opening is surrounded by the second light-shielding film one by one, color mixing can be prevented.

  The present invention includes the solid-state imaging device, wherein the first light shielding film is tungsten.

  According to this configuration, it is possible to form the first light shielding film that can be easily formed by the CVD method and has high light shielding properties. Also, it can be formed in the same process as the wiring extraction of electrodes and the like.

  The present invention includes the solid-state imaging device, wherein the second light shielding film is an aluminum thin film or an aluminum alloy thin film.

  According to this configuration, it is possible to form an optical waveguide structure that can be formed in the same process as the wiring of the peripheral circuit, is easy to process, and has high accuracy and high reliability. The second light shielding film is not limited to an aluminum thin film or an aluminum alloy thin film, and may be a metal film having a light shielding property such as W.

  The present invention also includes the solid-state imaging device in which an antireflection film is formed on the surface of the second light shielding film.

  According to this configuration, it is possible to further improve the light collecting property. Note that the surface of the second light-shielding film preferably acts as a moisture blocking layer or a corrosion prevention film, and may be an organic material or the like.

  According to the present invention, in the solid-state imaging device, the antireflection film is a silicon nitride film.

  According to this configuration, since the silicon nitride film functions as a block film for moisture or the like on the aluminum layer, the reliability can be further improved. Further, not only a silicon nitride film but also a silicon oxide film or a laminated film of a silicon nitride film and a silicon oxide film may be used.

  The present invention includes the solid-state imaging device, wherein an interelectrode distance between the first and second electrodes is 0.1 μm or less.

  According to this configuration, it is possible to obtain a highly accurate and reliable element structure even in a solid-state imaging element having a fine electrode structure.

  According to another aspect of the present invention, there is provided a method of manufacturing a solid-state imaging device including a photoelectric conversion unit and a charge transfer unit including a charge transfer electrode configured to transfer charges generated in the photoelectric conversion unit. A step of forming the photoelectric conversion portion and the charge transfer portion on the surface of the semiconductor substrate, and forming a first light-shielding film on the charge transfer electrode via an insulating film, and performing anisotropic etching. Forming a first light-shielding film on a side wall of the charge transfer electrode, forming a light-transmitting insulating film so as to cover the photoelectric conversion portion, and forming a second light-shielding film And forming a second light shielding film constituting an optical waveguide by forming an opening on the photoelectric conversion portion.

  According to this configuration, the first light-shielding film is formed on the side wall of the charge transfer electrode in a self-aligned manner, and thus can be formed without positional deviation. The second light-shielding film itself forms an optical waveguide structure. Therefore, it is possible to reduce misalignment and to form a solid-state imaging device with high accuracy and high reliability.

  According to the present invention, in the method of manufacturing the solid-state imaging device, the step of forming the second light-shielding film includes a step of forming the second light-shielding film over the entire surface, and a resist pattern having a tapered cross section. Forming the opening on the photoelectric conversion portion by etching the second light-shielding film as a mask.

  According to this configuration, it is possible to execute pattern formation having a profile similar to that of the resist pattern by performing etching using the resist pattern having a tapered cross section.

  The present invention also includes a step of forming a BPSG film as the insulating film and flattening by heating prior to the step of forming the second light shielding film in the method of manufacturing the solid-state imaging device.

  According to this configuration, since the second light-shielding film is formed after the surface is flattened, it is possible to reduce the displacement of the mask in the photolithography process and form a more accurate optical waveguide. In addition, as a planarization process, you may make it planarize by chemical mechanical polishing (CMP: Chemical Mechanical Polishing) besides reflow by heating.

  According to the present invention, in the method for manufacturing the solid-state imaging device, the insulating film is left on the surface of the charge transfer electrode.

  According to this configuration, the second light-shielding film is formed on a flatter surface, so that the pattern accuracy can be improved and the first and second light-shielding films can be insulated and separated. Therefore, a short circuit can be prevented and a more reliable circuit can be formed.

  The present invention also includes a method for manufacturing the solid-state imaging device, including a step of filling a light-transmitting material into an opening formed in the second light-shielding film.

  According to this configuration, the optical waveguide structure can be formed very easily.

  The present invention also includes the method for manufacturing a solid-state imaging device, including a step of filling a color filter material into an opening formed in the second light shielding film.

  According to this configuration, a thin and highly reliable optical waveguide structure can be formed very easily.

  In addition, the present invention includes the method for manufacturing a solid-state imaging device including a step of filling a fluorescent agent in an opening formed in the second light shielding film.

  According to this configuration, a thin and highly reliable optical waveguide structure can be formed very easily.

The present invention also includes a step of forming an antireflection film so as to cover the second light shielding film prior to the filling step in the method of manufacturing the solid-state imaging device.
According to this configuration, it is possible to easily form a highly reliable solid-state imaging device.

ADVANTAGE OF THE INVENTION According to this invention, it becomes possible to provide the solid-state image sensor provided with the high reliability which is not influenced by the position shift of a micro lens or an in-layer lens, and does not have the dispersion | variation and fall of the sensitivity by vignetting.
In addition, it is possible to obtain a solid-state imaging device that is not affected by the positional deviation of the light shielding film and has high reliability without sensitivity variations and smear deterioration.

Embodiments of the present invention will be described below with reference to the drawings.
(First embodiment)
As shown in FIGS. 1 and 2, this solid-state imaging device has an optical waveguide structure including a photoelectric conversion unit and a charge transfer unit including a charge transfer electrode that transfers charges generated in the photoelectric conversion unit. In the solid-state imaging device, the charge transfer electrodes include a first electrode 3a made of a first layer conductive film and a second electrode 3b made of a second layer conductive film, which are alternately arranged in parallel. And a first light-shielding film 6 made of a tungsten thin film that forms the side wall, and is formed on the side wall of the charge transfer electrode 3, and an optical waveguide is formed on the photoelectric conversion unit above the charge transfer electrode. A second light-shielding film 7 made of an aluminum thin film having an opening to be formed is provided. Here, the second light-shielding film 7 is formed via the planarization film 10 formed on the charge transfer portion, and is electrically insulated and separated from each other. The opening portion is formed on the photoelectric conversion portion so as to form an inverted truncated cone shape having a diameter increasing toward the upper side, and the surface constitutes a reflection surface. Here, FIG. 1 is a schematic cross-sectional view, FIG. 2 is a schematic plan view, and FIG. 1 is a cross-sectional view taken along line AA of FIG.

  According to the above configuration, since the first light-shielding film 6 is formed on the side wall of the charge transfer electrode 3 by self-alignment, there is no positional shift, and it is possible to prevent variations in sensitivity and deterioration of smear. Is surrounded by the second light-shielding film 7, thereby providing a solid-state imaging device that has improved light-collecting properties, is not affected by the displacement of the microlens 60, and does not vary in sensitivity due to vignetting. Is possible. In addition, since the second light-shielding film is formed on the planarization film, the patterning accuracy can be increased, and a highly accurate opening can be formed. Therefore, further miniaturization is possible, and it is possible to form a solid-state imaging device with high sensitivity and high reliability.

  Other structures are the same as those of a conventional solid-state imaging device, and include a photoelectric conversion unit 30 and a charge transfer unit 40 including a charge transfer electrode that transfers charges generated in the photoelectric conversion unit 30. A flattening film 10 made of a BPSG (borophospho silicate glass) film filled in the photoelectric conversion portion under the second light-shielding film 7 formed so as to have an opening in the conversion portion so as to have a substantially flat surface. Further, the upper layer of the second light shielding film 7 is provided with a planarizing film made of a translucent film 22 made of an organic film, and a filter 50 and a lens 60 are formed on the intermediate layer. It is characterized by being formed. 61 is a planarizing film on the filter.

  Thereby, it is possible to satisfactorily flatten the surface.

  The gate oxide film 2 is composed of a three-layer structure film of a silicon oxide film 2a, a silicon nitride film 2b, and a silicon oxide film 2c.

  Further, a photoelectric conversion unit 30 including a plurality of photodiode regions is formed on the silicon substrate 1, and a charge transfer unit 40 for transferring a signal charge detected by the photoelectric conversion unit 30 is provided between the photoelectric conversion units 30. It is formed.

  Although not shown in FIG. 2, the charge transfer channel through which the signal charge transferred by the charge transfer electrode moves is formed in a direction crossing the direction in which the charge transfer unit 40 extends.

  In FIG. 2, the description of the interelectrode insulating film formed near the boundary between the photodiode region 30 and the charge transfer portion 40 is omitted.

  As shown in FIG. 1, a photoelectric conversion unit 30 (30a, 30b), a charge transfer channel 33, a channel stop region 32, and a charge readout region 34 constituting a photodiode are formed in the silicon substrate 1, and the silicon substrate A gate oxide film 2 is formed on one surface. On the surface of the gate oxide film 2, charge transfer electrodes (a first layer electrode made of the first layer conductive film 3 a and a second layer electrode made of the second layer conductive film 3 b) sandwich the interelectrode insulating film 4. Are arranged side by side to form a single layer electrode structure. Reference numeral 5 denotes an upper insulating film covering the charge transfer electrode.

  In this example, a so-called honeycomb-structured solid-state imaging device is shown, but it goes without saying that the present invention can also be applied to a square lattice type solid-state imaging device.

Next, the manufacturing process of this solid-state imaging device will be described in detail with reference to FIGS.
First, a photoelectric conversion unit and a charge transfer unit are formed on the silicon substrate 1 by a usual method. For example, the charge transfer unit is formed as follows. A silicon oxide film 2a having a film thickness of 15 nm, a silicon nitride film 2b having a film thickness of 50 nm, and a silicon oxide film 2c having a film thickness of 10 nm are formed on the surface of an n-type silicon substrate 1 having an impurity concentration of about 1.0 × 10 ¹⁶ cm ^−3. And a gate oxide film 2 having a three-layer structure is formed.

  Subsequently, a first-layer polycrystalline silicon film 3a and a second-layer polycrystalline silicon film 3b are juxtaposed on the gate oxide film 2 via an interelectrode insulating film 4 made of a silicon oxide film, and oxidized around this. A silicon film 5 is formed (FIG. 3A).

  Thereafter, a tungsten thin film 6 is formed by CVD (FIG. 3B).

  Then, the tungsten thin film deposited on the horizontal portion is removed by anisotropic etching (reactive ion etching) and left on the side wall to form a side wall as the first light shielding film 6 (FIG. 3C).

  Subsequently, a BPSG film is formed on the upper layer and heated and reflowed to form the planarizing film 10 (FIG. 4A).

  Then, an aluminum thin film 7 is formed on this upper layer by a CVD method using organic aluminum (FIG. 4B).

  Then, a resist pattern R1 is formed on this upper layer by photolithography. Here, a tapered cross section is formed (FIG. 4C).

  Subsequently, dry etching is performed using the resist pattern R1 as a mask, thereby forming a second light-shielding film 7 made of an aluminum thin film having substantially the same profile as the resist pattern R1 (FIG. 4D).

  The opening formed in this way is filled with an organic film as a translucent film constituting the waveguide O (FIG. 5A).

  Then, a color filter layer 50 made of an organic film is formed on this upper layer (FIG. 5B).

  Then, after forming the planarizing film 61 on the filter, the microlens 60 is formed to obtain a solid-state imaging device as shown in FIGS.

  Further, according to this method, the first light-shielding film is formed on the side wall of the charge transfer electrode in a self-aligned manner, so that it can be formed without misalignment, and the second light-shielding film itself forms an optical waveguide structure. Therefore, it is possible to reduce misalignment and to form a highly accurate and reliable solid-state imaging device.

  According to this method, even in a solid-state imaging device having a miniaturized structure having an inter-electrode distance of about 0.1 μm, it is possible to improve the light collection efficiency and to read out charges, so that high-accuracy and highly reliable solid-state imaging is possible. An element can be obtained.

(Embodiment 2)
In the first embodiment, as shown in FIGS. 3 to 5, the BPSG film as the flattening film 10 that directly covers the photoelectric conversion unit 30 is formed, and then melted, flattened, and charge transfer is performed. In this embodiment, the upper edge of the first light shielding film constituting the sidewall is formed by performing etch back or CMP, as shown in FIGS. The surface of the second light-shielding film is made to have an anti-reflection film (metal) and the surface of the second light-shielding film is improved in pattern accuracy. It is characterized by being covered with an insulating film made of a silicon nitride film having a function as a cover film 8.
The other parts are formed in the same manner as a conventional solid-state imaging device, and detailed description thereof is omitted, but the reference numerals are the same as those in the first embodiment.

  That is, the process up to the formation of the charge transfer portion shown in FIG. 3C is performed in the same manner as in the first embodiment, and anisotropic etching (reactive ion etching) is performed as shown in FIG. ), The tungsten thin film deposited on the horizontal portion is removed and left on the side wall to form a side wall as the first light-shielding film 6, and subsequently, a BPSG film is formed on this upper layer, and resist etching back is performed. Etching is performed until the upper edge of the first light shielding film 6 constituting the sidewall is exposed, and planarization is performed to obtain the planarization film 10 (FIG. 6A).

  Thereafter, an aluminum thin film 7 is formed by CVD using organic aluminum as the upper layer (FIG. 6B).

  Then, a resist pattern R1 is formed on this upper layer by photolithography. Here, a tapered cross section is formed (FIG. 6C).

  Subsequently, dry etching is performed using the resist pattern R1 as a mask to form a second light-shielding film 7 made of an aluminum thin film having a profile substantially the same as that of the resist pattern R1 (FIG. 7A).

  Thereafter, a silicon nitride film is formed by the CVD method so as to cover the entire substrate surface on which the second light-shielding film 7 is formed (FIG. 7B).

  The opening formed in this way is filled with an organic film as the translucent film 22 constituting the waveguide O (FIG. 7C).

  A color filter layer 50 made of an organic film is formed on the upper layer (FIG. 8A).

  Then, after the on-filter flattening film 61 is formed, the microlens 60 is formed to obtain a solid-state imaging device as shown in FIG.

  Further, according to the solid-state imaging device, in addition to the effects of the first embodiment, the second light-shielding film is covered with the antireflection film 8, so that it is possible to further improve the light condensing property and this antireflection film. By using a silicon nitride film, the insulating property is improved and the impurity blocking effect is obtained. Therefore, even when the optical waveguide is made of BPSG, good characteristics can be maintained without causing a decrease in reliability. .

(Embodiment 3)
In the first and second embodiments, an optical waveguide is formed by filling the opening surrounded by the second light-shielding film 7 with a light-transmitting material. In this embodiment, as shown in FIG. Each of the openings surrounded by the light shielding film 7 is filled with a red filter material 50R, a green filter material 50G, and a blue filter material 50B, and a color filter is formed in the waveguide. Others are the same as in the first and second embodiments, but the microlens 60 is formed directly on the second light-shielding film 7 formed so as to surround the optical waveguide through the on-filter planarizing film 61. As a result, the thickness can be significantly reduced.
Further, since the filters of each color are separated by the partition made of the second light shielding film, color mixing is not caused.
The light-shielding metal is not limited to tungsten, and can be appropriately changed such as titanium (Ti), cobalt (Co), nickel (Ni).

  In addition, about a manufacturing method, it can change suitably, without being limited to the said embodiment.

  As described above, according to the present invention, it is possible to provide a solid-state imaging device that is not affected by the positional deviation of the microlens and the in-layer lens and that is free from variations and decreases in sensitivity due to vignetting. Therefore, it is effective for forming a fine and highly sensitive solid-state imaging device such as a small camera. Also, by filling the optical waveguide with a color filter material, a fluorescent agent, etc., color mixing can be prevented and shrinking in the vertical direction can be achieved, and the margin for the light incident angle can be reduced.

It is sectional drawing which shows the solid-state image sensor of the 1st Embodiment of this invention. It is a top view which shows the solid-state image sensor of the 1st Embodiment of this invention. It is a figure which shows the manufacturing process of the solid-state image sensor of the 1st Embodiment of this invention. It is a figure which shows the manufacturing process of the solid-state image sensor of the 1st Embodiment of this invention. It is a figure which shows the manufacturing process of the solid-state image sensor of the 1st Embodiment of this invention. It is a figure which shows the manufacturing process of the solid-state image sensor of the 2nd Embodiment of this invention. It is a figure which shows the manufacturing process of the solid-state image sensor of the 2nd Embodiment of this invention. It is a figure which shows the manufacturing process of the solid-state image sensor of the 2nd Embodiment of this invention. It is a figure which shows the solid-state image sensor of the 3rd Embodiment of this invention. It is a figure which shows an example of the solid-state image sensor of a prior art example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Silicon substrate 2 Gate oxide film 3a 1st layer polycrystalline silicon film 3b 2nd layer polycrystalline silicon film 4 Interelectrode insulating film 5 Silicon oxide film (insulating film)
6 First light shielding film (side wall)
7 Second light shielding film 8 Antireflection film 10 Flattening film (BPSG film)
22 translucent film 30 photoelectric conversion unit 40 charge transfer unit 50 color filter 60 microlens 61 flattening film

Claims (21)

In a solid-state imaging device having an optical waveguide structure including a photoelectric conversion unit and a charge transfer unit including a charge transfer electrode that transfers charges generated in the photoelectric conversion unit,
The charge transfer electrode is composed of a first electrode made of a first-layer conductive film and a second electrode made of a second-layer conductive film, which are alternately arranged in parallel.
A first light-shielding film formed on a side wall of the charge transfer electrode and constituting a side wall;
A solid-state imaging device comprising a second light-shielding film having an opening for forming an optical waveguide on the photoelectric conversion unit, on an upper layer of the charge transfer electrode. The solid-state imaging device according to claim 1,
The second light-shielding film is a solid-state imaging device formed via a planarization film formed on the charge transfer unit. The solid-state imaging device according to claim 1 or 2,
The first and second light shielding films are formed through an insulating film and are electrically insulated and separated. The solid-state imaging device according to any one of claims 1 to 3,
The second light-shielding film is a solid-state imaging device in which the opening is formed in an inverted truncated cone shape having a diameter that increases upward on the photoelectric conversion unit, and the surface forms a reflection surface. The solid-state imaging device according to any one of claims 1 to 4,
A solid-state imaging device in which the opening is filled with a translucent material. The solid-state imaging device according to claim 5,
The light-transmitting material is a solid-state imaging device which is an organic material. The solid-state imaging device according to any one of claims 1 to 4,
A solid-state imaging device in which a color filter material is formed by filling the opening with a color filter material. The solid-state imaging device according to any one of claims 1 to 4,
A solid-state imaging device in which the opening is filled with a fluorescent agent. A solid-state imaging device according to any one of claims 1 to 8,
The solid-state imaging device, wherein the first light shielding film is tungsten. The solid-state imaging device according to any one of claims 1 to 9,
The solid-state imaging device, wherein the second light shielding film is an aluminum thin film or an aluminum alloy thin film. The solid-state imaging device according to any one of claims 1 to 10,
A solid-state imaging device in which an antireflection film is formed on the surface of the second light shielding film. The solid-state imaging device according to claim 11,
The solid-state imaging device, wherein the antireflection film is a silicon nitride film. The solid-state imaging device according to any one of claims 1 to 12,
A solid-state imaging device, wherein an inter-electrode distance between the first and second electrodes is 0.1 μm or less. A method of manufacturing a solid-state imaging device comprising a photoelectric conversion unit and a charge transfer unit including a charge transfer electrode that transfers charges generated in the photoelectric conversion unit,
Forming the photoelectric conversion unit and the charge transfer unit on a semiconductor substrate surface;
Forming a first light-shielding film on the charge transfer electrode via an insulating film, performing anisotropic etching, and forming the first light-shielding film on a sidewall of the charge transfer electrode;
Forming a translucent insulating film so as to cover the photoelectric conversion part;
Forming a second light-shielding film, forming an opening on the photoelectric conversion unit, and forming a second light-shielding film constituting the optical waveguide. It is a manufacturing method of the solid-state image sensing device according to claim 14,
The step of forming the second light shielding film includes:
Forming the second light-shielding film over the entire surface;
Forming the opening on the photoelectric conversion unit by etching the second light-shielding film using a resist pattern having a tapered cross-section as a mask. It is a manufacturing method of the solid-state image sensing device according to claim 14,
Prior to the step of forming the second light-shielding film, a method of manufacturing a solid-state imaging device including a step of forming a BPSG film as the insulating film and flattening by heating. It is a manufacturing method of the solid-state image sensing device according to claim 16,
The method for manufacturing a solid-state imaging device in which the insulating film is left on the surface of the charge transfer electrode. A method for manufacturing a solid-state imaging device according to any one of claims 14 to 17,
A method for manufacturing a solid-state imaging device, including a step of filling a light-transmitting material into an opening formed in the second light-shielding film. A method for manufacturing a solid-state imaging device according to any one of claims 14 to 17,
A method for manufacturing a solid-state imaging device, including a step of filling a color filter material into an opening formed in the second light shielding film. A method for manufacturing a solid-state imaging device according to any one of claims 14 to 17,
A method for manufacturing a solid-state imaging device, including a step of filling a fluorescent agent in an opening formed in the second light shielding film. A method of manufacturing a solid-state imaging device according to any one of claims 18 to 20,
Prior to the filling step,
A method for manufacturing a solid-state imaging device, including a step of forming an antireflection film so as to cover the second light shielding film.

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