JPH1140557A - Semiconductor manufacturing equipment and manufacture of semiconductor integrated device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To completely remove an SOG film from a wafer edge portion while removing the SOG film which went into the reverse side of the wafer and, thereby, to prevent the subsequent processes from being affected, in an SOG coating system used for manufacturing a semiconductor integrated device. SOLUTION: An SOG coating system, wherein a wafer 1 is fixedly attached to a wafer attachment body 3 in a vacuum manner in a cup 7 so as to be rotated through a spin motor 2, comprises a nozzle 5 for dripping given SOG liquid onto the wafer 1 through a coating liquid piping 4, and a back rinse nozzle 6 which is connected to a solvent piping 8 to wash the reverse side of the wafer 1 while ejecting cleaning liquid. In the case where a silanol based SOG is used as the SOG liquid and an alcohol based solvent is used as a back rinse liquid, the distance 9 from the edge of the wafer 1 to the position where the back rinse nozzle 6 is located is limited to 5 mm-20 mm.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to an SOG coating step in a semiconductor integrated device manufacturing method and a semiconductor manufacturing apparatus for applying SOG.

[0002]

2. Description of the Related Art Conventionally, coated glass (hereinafter referred to as SOG).
In such a coating apparatus, the position of a back rinse nozzle attached for the purpose of removing foreign matter on the back surface of a semiconductor substrate (hereinafter referred to as a wafer) is adjusted so that the back surface of the wafer can be cleaned over a wide area. No. 92130, column 2, line 20 to column 3, line 4, published practical use 1-10043
As described in column 3, line 6 to line 12 of JP-A-5, a plurality of back rinse nozzles are mounted or movable.

[0003]

However, a practical model of the above-mentioned conventional manufacturing apparatus includes a SOG film on the wafer edge portion while removing the SOG film that has wrapped around the back surface of the wafer.
The specific position of the back rinse nozzle capable of completely removing the film was not described and was unknown.
If the SOG film wrapped around the back surface of the wafer remains, the position of the wafer becomes high, so that a defocus phenomenon occurs at the time of aligning exposure, so that accurate pattern formation cannot be performed. Also, if the film is sent to the subsequent process with the film remaining at the edge of the wafer, the film in this part will crack, peel off and re-attach to the wafer, and if it adheres to the back of the wafer, the same thing as above will occur. If it occurs and adheres to the wafer surface, the yield will be reduced and the subsequent process will be adversely affected. To avoid this, add to back rinse
There is also a method of dropping an edge rinse liquid for removing the SOG film from above the wafer edge, but this method requires equipment, a chemical solution, and the like.

Accordingly, the present invention provides a semiconductor integrated circuit which solves the above problem by limiting the range of the position of the back rinse nozzle when a silanol-based SOG is used as the SOG liquid and an alcohol-based solvent is used as the back rinse liquid. An object of the present invention is to provide a method for manufacturing a device.

Further, the present invention solves the above problem by designating the range of the position of the back rinse nozzle when a silanol-based SOG is used as the SOG liquid and an alcohol-based solvent is used as the back rinse liquid. The purpose is to provide the device.

[0006]

According to a first aspect of the present invention, there is provided a method of manufacturing a semiconductor integrated device, comprising: a base for vacuum-sucking a wafer; a motor for rotating the base; and an SOG solution dropped on the wafer. In an apparatus for coating an SOG film on a wafer having a nozzle and a back rinse nozzle for flowing a back rinse liquid to clean the back surface of the wafer, a silanol-based SOG was used as the SOG liquid and an alcohol-based solvent was used as the back rinse liquid. In this case, in order to simultaneously remove the SOG film wrapped around the back surface of the wafer and the SOG film at the wafer edge, the range of the position of the back rinse nozzle is limited, and the back surface of the wafer is cleaned. Features.

According to the present invention, the SOG film wrapping around the back surface of the wafer is removed while the SOG at the wafer edge is removed.
Since the G film can also be completely removed, there is an effect that the SOG film remaining without removing this portion does not adversely affect the subsequent process.

According to a second aspect of the present invention, there is provided a semiconductor integrated device utilizing the manufacturing method according to the first aspect.

According to the present invention, since the SOG film wrapping around the back surface of the wafer and the SOG film at the edge of the wafer are completely removed, the SOG remaining without removing this portion is removed.
This has the effect that the G film does not adversely affect the post-process processing.

[0010]

Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1) FIG. 1 is a sectional view showing an embodiment of a method of manufacturing a semiconductor integrated device according to the first aspect of the present invention. In FIG. 1, the SOG coating device is
The wafer 1 is vacuum-adsorbed and fixed to the wafer suction substrate 3 in the cup 7, rotated by the spin motor 2, and a predetermined SOG liquid is passed through the coating liquid pipe 4 to the wafer 1.
It has a nozzle 5 for dropping it upward, and a back rinse nozzle 6 connected to the solvent pipe 8 for jetting a cleaning liquid to wash the back surface of the wafer 1. Therefore, the present invention uses OCD T-2 (trade name, manufactured by Tokyo Ohka Kogyo Co., Ltd.) for the SOG solution and methanol for the back rinse, the wafer rotation speed during back rinse is 100 to 1500 rpm, and the methanol flow rate is 1
At the time of 0 to 100 ml / min, the position range 9 from the wafer edge to the back rinse nozzle is 5 mm to 20 m.
When the thickness is limited to m, the film at the wafer edge can be completely removed while removing the SOG film on the back surface of the wafer, so that the SOG film left unremoved in this portion may adversely affect the subsequent processing. There is an effect that there is no. Particularly preferably, the range 9 is between 10 mm and 15 mm. If it is smaller than this range, the SOG film that has wrapped around the back surface cannot be removed. If it is larger than this range, the back rinse liquid does not spread uniformly to the wafer edge, and the SOG film at the wafer edge tends not to be completely removed. .

The back rinse nozzle is 5 to 20 m.
You may install so that it may be movable in the range of m.

(Embodiment 2) FIG. 2 is a sectional view of a wafer edge portion showing an embodiment of a semiconductor integrated device according to the second aspect of the present invention. The SOG 11 applied to the wafer 10 is in a state of only application as shown in FIG.
Are wrapped around the edge and back of the wafer, but back rinsing by the method described above removes the SOG on the back and edge of the wafer 10 as shown in FIG.

[0014]

As described above, according to the method of manufacturing a semiconductor integrated device of the present invention, the SO
Since the SOG film at the wafer edge can be completely removed while the G film is removed, there is an effect that the SOG film remaining without being removed at this portion does not adversely affect the subsequent process. is there.

In the semiconductor integrated device of the present invention, the SOG film wrapped around the back surface of the wafer or the S
Since the OG film is completely removed, there is an effect that the SOG film remaining without removing this portion does not adversely affect the subsequent process.

[Brief description of the drawings]

FIG. 1 is a sectional view showing one embodiment of a method for manufacturing a semiconductor integrated device of the present invention.

FIG. 2 is a cross-sectional view of a wafer edge portion showing one embodiment of the semiconductor integrated device of the present invention.

[Explanation of symbols]

1. Wafer 2. 2. Spin motor Substrate 4. 4. Application liquid piping Nozzle 6. 6. Back rinse nozzle Cup 8. Solvent piping 9. 9. Range from wafer edge to back rinse nozzle 10. Wafer at the time of SOG application SOG applied to wafer

Claims (4)

[Claims] 1. A substrate for vacuum-sucking a semiconductor substrate, a motor for rotating the substrate, a nozzle for dropping a coating glass liquid on the semiconductor substrate, and a back rinse liquid for cleaning the back surface of the semiconductor substrate. In a semiconductor manufacturing apparatus for coating an SOG film on a semiconductor substrate, the semiconductor device having a back rinse nozzle for flowing the SOG film,
A semiconductor manufacturing apparatus in which a back rinse nozzle is disposed within a range of 5 to 20 mm from an edge of a semiconductor substrate in order to simultaneously remove the liquid and an SOG solution at an edge of the semiconductor substrate. 2. The semiconductor manufacturing apparatus according to claim 1, wherein said back rinse nozzle is movably installed in said range. 3. The method according to claim 1, wherein the step of applying the SOG film on the semiconductor substrate includes the step of applying a back rinse liquid ejected from a back rinse nozzle disposed at a position of 5 to 20 mm from the edge of the semiconductor substrate. A method for manufacturing a semiconductor integrated device, comprising: 4. A method for manufacturing a semiconductor integrated device, wherein said SOG liquid is a silanol-based SOG, and said back rinse liquid is an alcohol-based solvent.