JPH11345818A - Method for directly bonding aluminum wire to aluminum case - Google Patents

Method for directly bonding aluminum wire to aluminum case

Info

Publication number
JPH11345818A
JPH11345818A JP10152912A JP15291298A JPH11345818A JP H11345818 A JPH11345818 A JP H11345818A JP 10152912 A JP10152912 A JP 10152912A JP 15291298 A JP15291298 A JP 15291298A JP H11345818 A JPH11345818 A JP H11345818A
Authority
JP
Japan
Prior art keywords
aluminum
case
wire
bonding
projection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10152912A
Other languages
Japanese (ja)
Inventor
Taiji Otani
泰司 大谷
Mitsuharu Edakawa
光治 枝川
Atsushi Kano
厚 鹿野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aichi Steel Corp
Original Assignee
Aichi Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aichi Steel Corp filed Critical Aichi Steel Corp
Priority to JP10152912A priority Critical patent/JPH11345818A/en
Publication of JPH11345818A publication Critical patent/JPH11345818A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05556—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H01L2224/48249—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item the bond pad protruding from the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To make the design of the junction between an aluminum wire joined to an aluminum case made by die-casting aluminum and the case and the whole shape of the case and wire easier and to reduce the cost of the case and wire and, at the same time, to reduce the length of the wire by machining the aluminum case so that the surface roughness Rz of the case may fall within a specific range. SOLUTION: A projection (bump section) 2 for bonding is formed in an aluminum case 1 formed by die-casting aluminum for mounting a hybrid integrated circuit. Then, after the impurities on the outermost surface of the projection 2 is removed and, at the same time, the surface roughness Rz of the outermost surface of the projection 2 is finished to 0.1-0.5 μm in a chill layer by machining the outermost surface of the projection 2, the used machining oil is washed away. Therefore, an aluminum wire 3 which prevents the occurrence of such a fault as the noise produced from the hybrid integrated circuit, etc., can be joined directly to the aluminum case 1 by the ultrasonic bonding by using already an existing technique and facility. In addition, the outermost surface of the projection 2 is machined with a machining margin of about 20 μm.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明はアルミダイカスト製
の電子回路を搭載させるためのアルミケースに、直接ア
ルミワイヤーを超音波ボンディング接合可能にする方法
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for directly bonding an aluminum wire to an aluminum case for mounting an electronic circuit made of aluminum die casting by ultrasonic bonding.

【０００２】[0002]

【従来の技術】車両、航空機、通信機器等に用いる混成
厚膜集積回路等の電子回路は、アルミニウムダイカスト
製の電子回路用ケース（以下、アルミケースという）に
搭載されている。なおアルミケースは通常、成形性、軽
量化、放熱性等の理由からアルミにＳｉやＣｕを含有し
たアルミ合金で作製されている。このアルミ合金の表面
は硬く、また電子回路の接地端子に接続されている接地
導体としてのアルミワイヤーは純アルミ製であるため、
超音波ボンディング等により接地すべくアルミワイヤー
を直接アルミケースに接合しようとしても充分な接合は
得られない。2. Description of the Related Art Electronic circuits such as hybrid thick film integrated circuits used in vehicles, aircraft, communication equipment, and the like are mounted in an electronic circuit case made of aluminum die-casting (hereinafter referred to as an aluminum case). The aluminum case is usually made of an aluminum alloy containing Si or Cu in aluminum for reasons of moldability, weight reduction, heat dissipation and the like. Since the surface of this aluminum alloy is hard and the aluminum wire as a ground conductor connected to the ground terminal of the electronic circuit is made of pure aluminum,
If an aluminum wire is directly bonded to an aluminum case to be grounded by ultrasonic bonding or the like, sufficient bonding cannot be obtained.

【０００３】この電子部品を搭載するアルミケースは、
混成集積回路から発生するノイズ等の電波障害を防止す
る為に必要不可欠なものであり、特にノイズ防止には混
成集積回路とアルミケースをアルミワイヤーで接合する
ことで、アースをとることは有効である。[0003] The aluminum case on which this electronic component is mounted is:
It is indispensable to prevent radio interference such as noise generated from the hybrid integrated circuit.Especially, to prevent noise, it is effective to ground the hybrid integrated circuit and the aluminum case by joining them with aluminum wires. is there.

【０００４】そのアルミワイヤー接合によるノイズ防止
について、従来法を３つ以下に示す。事例１として、図
５に示すようにアルミケース１上にアルミワイヤー３を
接合させるためのアルミニウム製のパッド４（以下アル
ミパッドという）を配置し、混成集積回路５からアルミ
ワイヤー３およびアルミパッド４を介して超音波ボンデ
ィングにより接合する方法がある。[0004] Three conventional methods for preventing noise by the aluminum wire bonding are described below. As an example 1, as shown in FIG. 5, an aluminum pad 4 (hereinafter, referred to as an aluminum pad) for bonding an aluminum wire 3 is arranged on an aluminum case 1, and an aluminum wire 3 and an aluminum pad 4 are provided from the hybrid integrated circuit 5. Through ultrasonic bonding.

【０００５】また事例２として、特開平４ー２４２９６
１号にあるごとく（図６に示す）、アルミケース１に純
アルミ片を肉盛り溶接及び、表面を切削調整した肉盛り
切削部６を設けて事例１同様に接地する方法がある。さ
らに、事例３として、純アルミニウム材料をプレス加工
によりアルミケース及びアルミワイヤー接合部として成
形し、事例１同様の方法にて接合する方法がある。これ
らの方法は、アルミケースの接合部に純アルミニウム部
材を配置することによりアルミワイヤーによる超音波ボ
ンディングを実現する方法であり、事例１においては、
アルミケースにはんだ付け可能な表面処理及び、アルミ
パッドをはんだ付けする工程が必要となる。[0005] As Case 2, Japanese Patent Application Laid-Open No.
As shown in No. 1 (shown in FIG. 6), there is a method in which a pure aluminum piece is welded on the aluminum case 1 and a built-up cutting section 6 whose surface is cut and adjusted is provided and grounded in the same manner as in Case 1. Further, as a third example, there is a method in which a pure aluminum material is formed into an aluminum case and an aluminum wire bonding portion by press working, and the same method is used as in the first example. These methods are methods of realizing ultrasonic bonding using aluminum wires by arranging a pure aluminum member at a joint of an aluminum case.
A surface treatment that can be soldered to an aluminum case and a step of soldering an aluminum pad are required.

【０００６】事例２においては、事例１のような上記表
面処理及び、アルミパッドのはんだ付け工程が不要とな
るが、純アルミ片の肉盛り溶接及び、表面を切削調整工
程が必要となり、事例１および２とも工程の複雑さから
製造コストが高くなることは避けられない。In Case 2, the above-mentioned surface treatment and the soldering step of the aluminum pad as in Case 1 are not required, but the overlay welding of pure aluminum pieces and the step of cutting and adjusting the surface are required. In both cases, it is inevitable that the manufacturing cost is increased due to the complexity of the process.

【０００７】事例３においては、プレス加工によりアル
ミケース及びアルミワイヤー接合部を成形する為、製造
コストは抑えられるが、プレス加工の制約でケース側面
の肉厚、高さ、ケース底面の肉厚等に形状的な制約を受
けると共に複雑形状への対応が困難となる。上記問題を
解決するために、接合目的とする純アルミパッド又は、
純アルミ片の肉盛り溶接なしに、アルミケースにアルミ
ワイヤーを直接超音波ボンディング可能な電子回路搭載
用のアルミケースの製造が必要とされている。In case 3, the manufacturing cost can be reduced because the aluminum case and the aluminum wire joint are formed by pressing, but the thickness and height of the side and height of the case and the bottom of the case are restricted by the pressing process. However, it is difficult to deal with complicated shapes. In order to solve the above problem, pure aluminum pad or bonding purpose,
There is a need to manufacture an aluminum case for mounting an electronic circuit capable of directly ultrasonic bonding an aluminum wire to an aluminum case without overlay welding of pure aluminum pieces.

【０００８】[0008]

【発明が解決しようとする課題】アルミワイヤーの超音
波ボンディングは、接合部にアルミワイヤーを介して超
音波エネルギーを活用し、アルミワイヤーと接地部表面
を摩擦熱等で接合を行うものである。Ultrasonic bonding of an aluminum wire uses ultrasonic energy at the joint through an aluminum wire to join the aluminum wire and the surface of the grounding portion by frictional heat or the like.

【０００９】従来アルミワイアーとアルミケースとの接
合においては、接合部部材の材質が純アルミを配置する
こと又は、接合部表面にＮｉめっきで処理されている場
合には接合面の表面粗さを小さくした平滑面を実現する
ことにより、市場で実用化してきた。しかし、アルミダ
イカストへ直接アルミワイヤーを超音波ボンディングに
より接合することは、Ｓｉ、Ｃｕ等の添加元素の影響、
アルミダイカスト成形時の理型剤の影響、湯ジワ等の影
響があり困難とされていた。Conventionally, in joining an aluminum wire and an aluminum case, the joining member is made of pure aluminum or, if the joining surface is treated with Ni plating, the surface roughness of the joining surface is reduced. By realizing a reduced smooth surface, it has been put to practical use in the market. However, joining an aluminum wire directly to an aluminum die-cast by ultrasonic bonding requires the influence of additional elements such as Si and Cu,
It has been considered difficult due to the influence of the molding agent and the effect of hot water wrinkles during aluminum die casting.

【００１０】[0010]

【課題を解決するための手段】本発明では、超音波エネ
ルギーを効率よく摩擦熱へ変換すべく接合部材の表面粗
さに着目し、アルミダイカスト製のアルミケースを表面
粗さをＲｚ０．１〜０．５μｍに切削加工することによ
り、アルミワイヤーとアルミケースとを超音波ワイヤー
ボンディングにて直接接合を可能せしめる接合方法であ
る。また前記超音波ボンディングするアルミケースにお
いて、接合位置を有するアルミケースの接合位置のみに
あらかじめ突起部をアルミダイカスト鋳造にて成形して
おくことが好ましい。SUMMARY OF THE INVENTION In the present invention, attention is paid to the surface roughness of a joining member in order to efficiently convert ultrasonic energy into frictional heat. This is a joining method in which an aluminum wire and an aluminum case can be directly joined by ultrasonic wire bonding by cutting to 0.5 μm. Further, in the aluminum case to be subjected to the ultrasonic bonding, it is preferable that a protrusion is formed in advance only at a joining position of the aluminum case having a joining position by aluminum die casting.

【００１１】従来の技術からいえば、ダイカスト成形状
態では、表面粗さはＲｚ１μｍ前後が限界であり特別な
条件化で上記粗さを確保したとしても、離型剤の除去や
製造コストの問題がおこる。本発明では通常のアルミダ
イカスト成形条件にてアルミケース形状及び、突起部
（バンプ部）を形成し、突起部の表面を切削加工により
Ｒｚ０．１〜０．５μｍに調整し、平滑な接合面を確保
しアルミワイヤーとアルミケースとを直接超音波ワイヤ
ーボンディングにて接合可能とする。According to the prior art, in the state of die casting, the surface roughness is limited to around Rz 1 μm, and even if the above roughness is ensured under special conditions, there are problems of removal of the release agent and production cost. Get offended. In the present invention, the shape of the aluminum case and the projections (bumps) are formed under ordinary aluminum die-casting molding conditions, and the surface of the projections is adjusted to Rz 0.1 to 0.5 μm by cutting to form a smooth joint surface. The aluminum wire and the aluminum case can be directly joined by ultrasonic wire bonding.

【００１２】アルミケースにアルミダイカスト鋳造にて
成形した突起部の表面には、アルミダイカスト組成であ
るが均一なチル層が存在し、内部に行くに従いボンディ
ングを阻害する要因となりえる鋳巣や、マイクロキャビ
ティ等の欠陥が露出してくる。その為、切削加工ではア
ルミケースへの接合位置表面における不純物除去する切
削量でありながら、チル層内で表面粗さを調整する必要
がある。[0012] A uniform chill layer having an aluminum die-casting composition exists on the surface of the projection formed by aluminum die-casting in an aluminum case. Defects such as cavities are exposed. Therefore, in the cutting process, it is necessary to adjust the surface roughness in the chill layer while the amount of impurities removed on the surface of the joining position to the aluminum case is removed.

【００１３】ここでの切削加工とは、バフ研磨、砥石研
磨仕上げ等アルミダイカスト最表層の変質が比較的起こ
りやすい加工方法を用いるとボンディング特性のバラツ
キを生ずる為、最表層に酸化膜、異物付着等の変質を抑
制する加工方法とする。本発明での突起部は極部的な切
削加工を容易にすると共に、超音波エネルギーが水平方
向に分散されにくく、効率を確保するために有利であ
る。The term "cutting" used herein means that the use of a processing method, such as buffing or grinding stone polishing, in which the outermost surface of the aluminum die-casting is relatively easy to change, causes variations in bonding characteristics. And other processing methods to suppress alteration. The projections according to the present invention are advantageous for facilitating extreme cutting, and for dispersing ultrasonic energy in the horizontal direction, and ensuring efficiency.

【００１４】[0014]

【発明の実施の形態】実施例 本発明にかかる実施例について、図１にアルミダイカス
ト製のアルミケースにアルミワイヤーを直接超音波ボン
ディングした電子部品品用のアルミケースの全体断面図
を、図２にアルミケースの突起部周辺の拡大断面図を、
図３に表面粗さとボンディング剪断強度との関係図を、
図４に表面粗さとボンディング条件の模式図を示して詳
説する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention are shown in FIG. 1 and FIG. 2 is an overall sectional view of an aluminum case for electronic parts in which an aluminum wire is directly ultrasonic-bonded to an aluminum case made of aluminum die-casting. The enlarged sectional view around the protrusion of the aluminum case
FIG. 3 shows the relationship between the surface roughness and the bonding shear strength.
FIG. 4 shows a schematic diagram of the surface roughness and bonding conditions, which will be described in detail.

【００１５】本実施例は、混成集積回路を搭載するアル
ミダイカスト製のアルミケースに接合目的の突起部（バ
ンプ部）を成形したのち、突起部の最表面（突起部の最
上表面を示す）を切削加工により、最表面の不純物を除
去すると共にチル層内で表面粗さをＲｚ０．１〜０．５
μｍに仕上げる工程を施し、切削加工に使用した切削油
を洗浄することにより既存の技術、設備にて混成集積回
路から発生するノイズ等の障害を防止する接合をアルミ
ワイヤーを直接超音波ボンディングにてアルミケースへ
接合した。In this embodiment, after forming a projection (bump) for bonding purpose in an aluminum die-cast aluminum case on which a hybrid integrated circuit is mounted, the outermost surface of the projection (showing the uppermost surface of the projection) is formed. By cutting, impurities on the outermost surface are removed and the surface roughness in the chill layer is adjusted to Rz 0.1 to 0.5.
Applying a process of finishing to μm and washing the cutting oil used for cutting by using existing technology and equipment to prevent interference such as noise generated from the hybrid integrated circuit by direct ultrasonic bonding of aluminum wire Joined to aluminum case.

【００１６】図１に示すように、１はアルミダイカスト
製のアルミケースで寸法４０ｍｍ×３０ｍｍ×５ｍｍの
純アルミ中に１２％Ｓｉを含有したＪＩＳーＨ５３０２
（ＡＤＣ１２材）を用いたアルミダイカスである。２は
アルミワイヤーが超音波ボンディングされる突起部（バ
ンプ部）である。この突起部は本実施例においては、寸
法は高さ１、５ｍｍ×底面４、０ｍｍを有している。ま
た前記突起部の最表面には加工代が約２０μｍ程度の切
削加工を施した。装置は市販のフライス盤にを用い、刃
物としてエンドミルを使用して、切削条件として切削油
使用、回転数１００００ｒｐｍ／ｍｉｎ、送り速度０．
１ｍ／ｍｉｎにて表面粗さをＲｚ０．３μｍに加工した
ものである。表面粗さは切削条件（回転数２５００〜１
００００ｒｐｍ／ｍｉｎ、送り速度０．０１〜０．３ｍ
／ｍｉｎ）を変化させることによりＲｚ０．１〜０．５
μｍまで調整できる。３はアルミワイヤーで、実施例で
はアルミケース１における突起部２からアルミパッド４
との間をかけ渡している。また該アルミパッド４は、電
子部品を備えた混成集積回路５である。As shown in FIG. 1, reference numeral 1 denotes an aluminum case made of aluminum die-cast, which is JIS-H5302 containing 12% Si in pure aluminum having dimensions of 40 mm × 30 mm × 5 mm.
This is an aluminum diecasing using (ADC12 material). Reference numeral 2 denotes a projection (bump) to which the aluminum wire is ultrasonically bonded. In this embodiment, the protrusion has a height of 1.5 mm and a bottom surface of 4.0 mm. Further, the outermost surface of the projection was subjected to a cutting process with a machining allowance of about 20 μm. The apparatus is a commercially available milling machine, an end mill is used as a cutting tool, cutting oil is used as cutting conditions, the number of revolutions is 10,000 rpm / min, and the feed rate is 0.
The surface roughness was processed to Rz 0.3 μm at 1 m / min. The surface roughness depends on the cutting conditions (rotation speed 2500 to 1
0000 rpm / min, feed rate 0.01-0.3 m
/ Min) by changing Rz 0.1 to 0.5.
It can be adjusted down to μm. Reference numeral 3 denotes an aluminum wire. In the embodiment, an aluminum pad 4 extends from the projection 2 of the aluminum case 1.
And between. The aluminum pad 4 is a hybrid integrated circuit 5 having electronic components.

【００１７】次に図２に示すように、アルミケース１に
おける突起部２は、その最表面２１の切削加工部分２２
を切削することにより、接合面２３を設けることが本発
明において重要である。Next, as shown in FIG. 2, the protruding portion 2 of the aluminum case 1
It is important in the present invention to provide the joint surface 23 by cutting the surface.

【００１８】また図３に示すように、表面粗さを横軸、
超音波ボンディング後の剪断強度を縦軸にした関係図か
ら、表面粗さＲｚを０．１〜０．５μｍ内にすることに
より確実に実用的な剪断強度を確保できる。As shown in FIG. 3, the surface roughness is represented by the horizontal axis.
From the relationship diagram in which the shear strength after ultrasonic bonding is plotted on the vertical axis, practical shear strength can be reliably ensured by setting the surface roughness Rz within 0.1 to 0.5 μm.

【００１９】また図４に示すように、表面粗さを横軸
に、ボンディング条件を縦軸に関係図から、ボンディン
グ条件は基本的には純アルミニウムのボンディング良好
域があるが、その中でアルミダイカスト製のアルミケー
スとアルミワイヤーを超音波ボンディングする場合は、
表面粗さＲｚが０．１〜０．５の範囲がアルミダイカス
トのボンディング良好域となることがわかった。さらに
従来であれば、ボンディング条件としては過剰域と判断
された範囲にまで本発明によるボンディング可能な範囲
が及んでいることがわかった。なお上記のボンディング
条件であるが、これは時間・出力・荷重を総合的に大小
つけたものである。As shown in FIG. 4, the surface roughness is plotted on the horizontal axis and the bonding conditions are plotted on the vertical axis. When ultrasonic bonding aluminum die case and aluminum wire,
It was found that the surface roughness Rz in the range of 0.1 to 0.5 was a good bonding area for aluminum die casting. Furthermore, it has been found that, in the related art, the bonding condition according to the present invention extends to a range determined as an excessive range as a bonding condition. It should be noted that the bonding conditions described above are based on the total size of time, output, and load.

【００２０】さらに、本発明によるボンディング結果を
接合部分の外観状態（図７参照）及び剪断評価跡の拡大
写真（図８及び図９参照）から詳説すると、本発明によ
り直接ボンディング接合方法を施したものは、剪断評価
後のアルミダイカストの突起部（バンプ部）表面に融着
跡が見られる。しかしながら、アルミケースの突起部に
単純にアルミワイヤーをボンディングしたものは、突起
部表面に融着跡が見られず、剪断評価においてその強度
が劣ることが明らかである。尚、このアルミワイヤーの
超音波ボンディング条件としては、超音波工業製（ＵＳ
Ｗ−２０ＺＤ）を用いて、アルミワイヤーは純度９９．
９９％、加圧力５００ｇ、加圧時間 ０．６ｓｅｃ、出
力３〜４Ｗでボンディングを行った。また剪断試験条件
としては、株式会社レスカ製（ＰＴＲ−０１）を用い、
速度０．５ｍｍ／ｓｅｃ、剪断高さ１０μｍにて実施し
た。Further, the bonding result according to the present invention will be described in detail from the appearance of the bonded portion (see FIG. 7) and enlarged photographs of the shear evaluation trace (see FIGS. 8 and 9). In the case of the aluminum die-cast, a mark of fusion was observed on the surface of the projection (bump) of the aluminum die-cast after the shear evaluation. However, when the aluminum wire is simply bonded to the projection of the aluminum case, no trace of fusion is observed on the surface of the projection, and it is clear that the strength is inferior in the shear evaluation. The conditions for ultrasonic bonding of this aluminum wire are as follows:
W-20ZD) and the purity of the aluminum wire is 99.
Bonding was performed at 99%, a pressure of 500 g, a pressure time of 0.6 sec, and an output of 3 to 4 W. In addition, as a shear test condition, using Reska Co., Ltd. (PTR-01),
The test was performed at a speed of 0.5 mm / sec and a shear height of 10 μm.

【００２１】[0021]

【発明の効果】以上に述べた如く、本発明を実施するこ
とにより電子部品搭載用のアルミケースのノイズ等の障
害を防止する接合、すなわちアルミワイヤーの超音波ボ
ンディングを行うに際し、従来方法における純アルミニ
ウム部品（アルミパッド）の配置や、純アルミニウムの
肉盛り溶接なしに、純アルミニウムプレス加工品で生ず
る製品形状設計上の制約が少ないアルミダイカスト製の
アルミケース接合部に直接アルミワイヤーを超音波ボン
ディング可能な電子部品搭載用のアルミケースを提供す
る方法である。As described above, by carrying out the present invention, when performing bonding for preventing obstacles such as noise in an aluminum case for mounting electronic components, that is, when performing ultrasonic bonding of aluminum wires, a conventional method is used. Ultrasonic bonding of aluminum wire directly to aluminum die-cast aluminum case joints with less restrictions on product shape design that occurs with pure aluminum pressed products without disposing aluminum parts (aluminum pads) and overlay welding of pure aluminum This is a method of providing an aluminum case for mounting possible electronic components.

【００２２】本発明により、上記接合部分及び全体形状
の設計が容易に行えることと合わせ低コストで製品を製
造できるるという優れた効果を奏する。またボンディン
グ接合において、その接合位置にあらかじめ突起部を設
けるようにアルミダイカスト鋳造にて成形しておけば、
接合位置の表面だけを切削加工するだけでよく、それに
より切削加工時間が短縮化、切削工具の消耗量削減化が
実現できる。さらには、接合するアルミワイヤーの長さ
を短小化できる。According to the present invention, there is an excellent effect that a product can be manufactured at low cost in addition to the fact that the above-mentioned joint and the whole shape can be easily designed. In addition, in bonding bonding, if it is formed by aluminum die casting so that a projection is provided in advance at the bonding position,
It is only necessary to cut the surface at the joining position, thereby shortening the cutting time and reducing the consumption of the cutting tool. Furthermore, the length of the aluminum wire to be joined can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の実施例に係るアルミダイカスト製のア
ルミケースへの超音波ボンディング後のアルミケース全
体断面図である。FIG. 1 is an overall sectional view of an aluminum case after ultrasonic bonding to an aluminum die-cast aluminum case according to an embodiment of the present invention.

【図２】本発明の実施例に係るアルミケースの突起部周
辺の拡大断面図である。FIG. 2 is an enlarged sectional view around a protrusion of an aluminum case according to the embodiment of the present invention.

【図３】本発明の実施例に係る表面粗さとボンディング
剪断強度との関係図である。FIG. 3 is a diagram illustrating a relationship between surface roughness and bonding shear strength according to an example of the present invention.

【図４】本発明の実施例に係る表面粗さとボンディング
条件の模式図である。FIG. 4 is a schematic diagram of surface roughness and bonding conditions according to an example of the present invention.

【図５】従来方法によるアルミケースの突起部周辺の拡
大断面図である。FIG. 5 is an enlarged cross-sectional view around a protrusion of an aluminum case according to a conventional method.

【図６】従来の他の方法によるアルミケースの突起部周
辺の拡大断面図である。FIG. 6 is an enlarged cross-sectional view around a projection of an aluminum case by another conventional method.

【図７】本発明による直接接合方法を施した接合部分の
外観状態写真である。FIG. 7 is a photograph showing the appearance of a bonded portion subjected to a direct bonding method according to the present invention.

【図８】本発明による直接接合方法を施した接合部分の
剪断評価後の拡大写真である。FIG. 8 is an enlarged photograph of a bonded portion subjected to a direct bonding method according to the present invention after shear evaluation.

【図９】従来の単純にアルミダイカスト製の突起部にア
ルミワイヤーをボンディングした接合部分の剪断評価後
の拡大写真である。FIG. 9 is an enlarged photograph of a conventional joint portion obtained by simply bonding an aluminum wire to a projection made of aluminum die-casting after a shear evaluation.

【符号の説明】[Explanation of symbols]

１：アルミダイカスト製のアルミケース、２：突起部、
３：アルミワイヤー、４：アルミパッド、５：混成集積
回路、６：肉盛り切削部、２１：最表面、２２：切削加
工部分、２３：接合面1: Aluminum case made of aluminum die-casting, 2: Projection,
3: Aluminum wire, 4: Aluminum pad, 5: Hybrid integrated circuit, 6: Overlay cutting portion, 21: Top surface, 22: Cutting portion, 23: Joining surface

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】超音波ボンディングにてアルミダイカスト
製のアルミケースにアルミワイヤーを直接接合する方法
において、 前記超音波ボンディングによる接合位置には、少なくと
もその表面を切削加工して表面粗さＲｚ０．１〜０．５
μｍに仕上げることを特徴とするアルミケースへの直接
ボンディング方法。1. A method of directly bonding an aluminum wire to an aluminum die-cast aluminum case by ultrasonic bonding, wherein at least the surface of the bonding position by ultrasonic bonding is cut to form a surface roughness Rz0.1. ~ 0.5
Direct bonding method to aluminum case characterized by finishing to μm. 【請求項２】請求項１において、前記アルミダイカスト
製のアルミケースにおける超音波ボンディングによる接
合位置には、あらかじめ突起部（バンプ部）をアルミダ
イカスト鋳造にて成形しておくことを特徴とするアルミ
ケースへの直接ボンディング方法。2. A method according to claim 1, wherein a projection (bump) is formed in advance by an aluminum die casting at a bonding position by ultrasonic bonding in said aluminum case made of aluminum die casting. Direct bonding method to the case.
JP10152912A 1998-06-02 1998-06-02 Method for directly bonding aluminum wire to aluminum case Pending JPH11345818A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10152912A JPH11345818A (en) 1998-06-02 1998-06-02 Method for directly bonding aluminum wire to aluminum case

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10152912A JPH11345818A (en) 1998-06-02 1998-06-02 Method for directly bonding aluminum wire to aluminum case

Publications (1)

Publication Number Publication Date
JPH11345818A true JPH11345818A (en) 1999-12-14

Family

ID=15550869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10152912A Pending JPH11345818A (en) 1998-06-02 1998-06-02 Method for directly bonding aluminum wire to aluminum case

Country Status (1)

Country Link
JP (1) JPH11345818A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7891707B2 (en) 2007-10-04 2011-02-22 Honda Motor Co., Ltd. Steering hanger beam

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7891707B2 (en) 2007-10-04 2011-02-22 Honda Motor Co., Ltd. Steering hanger beam

Similar Documents

Publication Publication Date Title
JP4463319B2 (en) Bonding structure
US7323255B2 (en) Method of producing base plate circuit board, base plate for circuit board, and circuit board using the base plate
CN105108257B (en) A kind of transition liquid-phase assisted Solid-state connection method
US7185420B2 (en) Apparatus for thermally coupling a heat dissipation device to a microelectronic device
JP2006282417A (en) Metal/ceramic joined substrate
CN104011843B (en) Semiconductor device
CN106384720A (en) Method and device for manufacturing solder bumps and electronic component
TW201205697A (en) Bump structure forming method and devices
JP3347279B2 (en) Semiconductor device and method of manufacturing the same
JPH11345818A (en) Method for directly bonding aluminum wire to aluminum case
JP2010097963A (en) Circuit board and method for manufacturing the same, and electronic component module
TW201021139A (en) Low profile solder grid array technology for printed circuit board surface mount components
JP2822158B2 (en) Multilayer metal lead frame and method of manufacturing the same
JP2870506B2 (en) Soldering method of work with bump
JP2013052433A (en) SOLDER ALLOY OF Pb-FREE Zn SYSTEM
JPH06268114A (en) Semiconductor device
CN207479839U (en) A kind of workpiece exothermic weld auxiliary device
JP3077505B2 (en) Lead frame manufacturing method
CN103694956B (en) Mixed powder capable of rapidly removing punched burrs from sheet-type electrical contact and use method of mixed powder
JP4435663B2 (en) Solder material, electronic component, and method of manufacturing electronic component
JPH07122696A (en) Semiconductor device
JP2756238B2 (en) Friction welding between tungsten-based metal and copper-based metal
JP3379246B2 (en) Lead frame with heat sink and method of manufacturing the same
JP3388080B2 (en) Lead frame for semiconductor device and method of manufacturing semiconductor device
JPH06103790B2 (en) Method for manufacturing aluminum insulating plate