JPH11335896A - Wafer plating apparatus - Google Patents
Wafer plating apparatusInfo
- Publication number
- JPH11335896A JPH11335896A JP14301998A JP14301998A JPH11335896A JP H11335896 A JPH11335896 A JP H11335896A JP 14301998 A JP14301998 A JP 14301998A JP 14301998 A JP14301998 A JP 14301998A JP H11335896 A JPH11335896 A JP H11335896A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- wafer
- oxide film
- solution
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は表面に配線用の溝や
コンタクトホールが形成されたウエハの表面や溝及び穴
の内壁面に銅等のメッキを施すウエハメッキ装置に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer plating apparatus for plating copper or the like on the surface of a wafer having wiring grooves and contact holes formed on the surface and the inner wall surfaces of the grooves and holes.
【０００２】[0002]
【従来の技術】ウエハ表面に形成される配線溝のバリア
材に用いられるＴｉＮ、ＴａＮ、ＷＮ等のセラミック系
材料は大気中のＯ２や水中に溶存するＯ２の影響で瞬時
にその表面に酸化膜が形成される。この酸化膜が膜抵抗
値を上げ電解メッキを行う際の障害になるばかりではな
く、メッキ膜界面での密着力を低下させるという問題が
ある。従来、該酸化膜を除去するため別の処理槽を設
け、電解メッキを行う前に該処理槽で酸化膜の除去処理
を行っている。BACKGROUND ART TiN used in the barrier material of the wiring grooves formed on the wafer surface, TaN, ceramic material such as WN on the surface instantaneously under the influence of O 2 dissolved in the O 2 and water in the atmosphere An oxide film is formed. This oxide film not only raises the resistance of the film and hinders the electroplating, but also reduces the adhesion at the interface of the plating film. Conventionally, another treatment tank is provided for removing the oxide film, and the oxide film is removed in the treatment tank before performing the electrolytic plating.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記酸
化膜を除去する処理槽と電解メッキ槽を一列に並べた装
置では、該処理槽で酸化膜の除去処理をしたウエハを電
解メッキ槽に移動させる時に該ウエハを空中に曝すた
め、たとえ酸化膜を完全に除去したとしても、再度酸化
膜が形成されるという問題があった。However, in the apparatus in which the processing tank for removing the oxide film and the electrolytic plating tank are arranged in a line, the wafer whose oxide film has been removed in the processing tank is moved to the electrolytic plating tank. Since the wafer is sometimes exposed to the air, there is a problem that an oxide film is formed again even if the oxide film is completely removed.
【０００４】本発明は上述の点に鑑みてなされたもの
で、ウエハの表面、該表面に形成された溝や穴の下地の
表面に存在する酸化膜を除去する処理をした後、再度酸
化膜が形成される前にメッキ膜を形成できるウエハメッ
キ装置を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and has been made to remove an oxide film existing on the surface of a wafer, the surface of a groove or a hole formed on the surface of the wafer, and then re-oxidize the oxide film. It is an object of the present invention to provide a wafer plating apparatus capable of forming a plating film before a wafer is formed.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決するため
請求項１に記載の発明は、ウエハの表面、該表面に形成
された溝及び／又は穴の下地の表面に存在する酸化膜を
除去した後、メッキを施すウエハメッキ装置において、
１つのメッキ槽の中で酸化膜を除去するための処理液
と、メッキを施すメッキ液を順次入れ替えてメッキを施
すことを特徴とする。このように１つのメッキ槽の中で
酸化膜除去とメッキ膜形成とを連続して行うことによ
り、酸化膜の除去処理後、ウエハを空中に曝すことがな
くメッキ処理を行うことができるから、再度酸化膜が形
成されないうちにメッキ膜を形成することができる。According to a first aspect of the present invention, an oxide film present on a surface of a wafer, a surface of a groove and / or a hole formed on the surface of the wafer is removed. After that, in a wafer plating apparatus that performs plating,
The plating is performed by sequentially replacing a treatment solution for removing an oxide film and a plating solution for plating in one plating tank. By continuously performing the oxide film removal and the plating film formation in one plating tank in this manner, the plating process can be performed without exposing the wafer to the air after the oxide film removal process. The plating film can be formed before the oxide film is formed again.
【０００６】また、請求項２に記載の発明は、請求項１
に記載のウエハメッキ装置において、酸化膜を除去する
処理液は、濃度０．１〜２０重量％のＨ２ＳＯ４、ＨＣ
ｌ、ＨＮＯ３、Ｈ３ＰＯ４、ＨＦ等の無機酸又は該無機
酸とＮａ又はＫとの塩、ＣＨ ３ＣＯＯＨ、オキシカルボ
ン酸等の有機酸又は該有機酸Ｎａ又はＫとの塩、ＮａＯ
Ｈ又はＫＯＨの塩基類を含む溶液であり、ウエハを陰極
とし水素還元反応により酸化膜を除去し、表面を活性化
することを特徴とする。[0006] The invention described in claim 2 is the invention according to claim 1.
The oxide film is removed in the wafer plating apparatus described in (1).
The processing solution is H at a concentration of 0.1 to 20% by weight.2SO4, HC
1, HNO3, H3PO4, Inorganic acids such as HF or the inorganic acids
Salt of acid and Na or K, CH 3COOH, oxycarbo
An organic acid such as an acid or a salt with the organic acid Na or K, NaO
A solution containing bases of H or KOH.
The oxide film is removed by the hydrogen reduction reaction and the surface is activated.
It is characterized by doing.
【０００７】また、請求項３に記載の発明は、請求項１
又は２に記載のウエハメッキ装置において、メッキ液は
硫酸銅５０〜２５０ｇ／ｌ、硫酸４０〜２２０ｇ／ｌを
主成分とした電解メッキ液であることを特徴とする。こ
のようにメッキ液と酸化膜を除去する処理液にＨ２ＳＯ
４を用いた場合は、酸化膜の除去処理後、水洗工程を必
要としない。[0007] The invention according to claim 3 provides the invention according to claim 1.
Alternatively, in the wafer plating apparatus described in 2, the plating solution is an electrolytic plating solution containing 50 to 250 g / l of copper sulfate and 40 to 220 g / l of sulfuric acid as main components. The plating solution and the processing solution for removing the oxide film are H 2 SO
When No. 4 is used, a water washing step is not required after the oxide film is removed.
【０００８】また、請求項４に記載の発明は、請求項１
乃至３のいずれか１に記載のウエハメッキ装置におい
て、酸化膜を除去する処理液をメッキ槽から排出し、新
たにメッキ液を充填する間、該メッキ槽内に不活性ガス
を充填しておくことを特徴とする。このように、メッキ
槽内に不活性ガスを充填しておくことにより、酸化膜除
去処理面がＯ２に曝されることがないから、新たにメッ
キ液を充填する間に再度酸化膜が形成することがない。[0008] The invention described in claim 4 is the first invention.
In the wafer plating apparatus according to any one of Items 1 to 3, the treatment liquid for removing the oxide film is discharged from the plating tank, and the plating tank is filled with an inert gas while the plating liquid is newly filled. It is characterized by. By filling the plating tank with the inert gas in this way, the oxide film removal treated surface is not exposed to O 2 , so that an oxide film is formed again while the plating solution is newly charged. Never do.
【０００９】また、請求項５に記載の発明は、請求項１
乃至４のいずれか１に記載のウエハメッキ装置におい
て、酸化膜を除去するための処理液をメッキ槽から排出
し、メッキ液を充填する前に、該メッキ槽内に溶存酸素
量が１ｐｐｍ以下にした純水を供給し、メッキ槽内を洗
浄することを特徴とした。このように酸化膜除去処理後
に純水を充填した洗浄を行うことにより、酸化膜を除去
する処理液とメッキ液がその主成分が異なる性質でも酸
化膜除去処理とメッキ処理とが連続して行うことができ
ると共に、溶存酸素量が１ｐｐｍ以下であるから、酸化
膜が再度形成されることもない。The invention described in claim 5 is the first invention.
In the wafer plating apparatus according to any one of Items 1 to 4, the treatment liquid for removing the oxide film is discharged from the plating tank, and before the plating liquid is filled, the amount of dissolved oxygen in the plating tank is reduced to 1 ppm or less. It is characterized by supplying pure water and cleaning the inside of the plating tank. By performing the cleaning with the pure water after the oxide film removing process, the oxide film removing process and the plating process are continuously performed even if the treating solution for removing the oxide film and the plating solution have different main components. In addition, since the dissolved oxygen amount is 1 ppm or less, the oxide film is not formed again.
【００１０】[0010]
【発明の実施の形態】以下、本発明の実施の形態例を図
面に基づいて説明する。図１は本発明のウエハメッキ装
置の概略構成を示す図である。図１において、１はメッ
キ槽であり、該メッキ槽１はメッキ槽本体２と底板３と
からなる。メッキ槽本体２の下方は開口しており、該開
口部をＯリング等のシール部材４を介して底板３で閉じ
ることにより、メッキ槽本体２内の空間５は密閉された
空間となる。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing a schematic configuration of a wafer plating apparatus of the present invention. In FIG. 1, reference numeral 1 denotes a plating tank, and the plating tank 1 includes a plating tank main body 2 and a bottom plate 3. The lower part of the plating tank main body 2 is open, and the space 5 in the plating tank main body 2 becomes a closed space by closing the opening with a bottom plate 3 via a sealing member 4 such as an O-ring.
【００１１】メッキ槽本体２には液流入口６、液流出口
７及びガス流入口８が設けられている。底板３の上面に
はウエハ９が載置され、メッキ槽本体２内には該ウエハ
９と対向して陽極電極１０が配置されている。また、ウ
エハ９と陽極電極１０の間にはメッキ電源（直流電源）
１１から所定の電圧が印加されるようになっている。The plating tank body 2 is provided with a liquid inlet 6, a liquid outlet 7, and a gas inlet 8. A wafer 9 is placed on the upper surface of the bottom plate 3, and an anode electrode 10 is arranged in the plating tank main body 2 so as to face the wafer 9. A plating power supply (DC power supply) is provided between the wafer 9 and the anode electrode 10.
11, a predetermined voltage is applied.
【００１２】１２はメッキ液が収容されるメッキ液収容
容器であり、該メッキ液収容容器１２に収容されたメッ
キ液はポンプ１３により、液流入口６を通ってメッキ槽
１内に供給されるようになっている。１４は酸化膜除去
処理液が収容される処理液収容容器であり、該処理液収
容容器１４に収容された酸化膜除去処理液はポンプ１５
により、液流入口６を通ってメッキ槽１内に供給される
ようになっている。１６、１７はそれぞれ開閉弁であ
り、メッキ槽１内の空間５に収容されたメッキ液又は酸
化膜除去処理液は開閉弁１６又は１７を開くことによ
り、容器１２又は１４に回収されるようになっている。Reference numeral 12 denotes a plating solution storage container for storing the plating solution. The plating solution stored in the plating solution storage container 12 is supplied into the plating tank 1 through the solution inlet 6 by the pump 13. It has become. Reference numeral 14 denotes a processing liquid storage container that stores the oxide film removal processing liquid, and the oxide film removal processing liquid that is stored in the processing liquid storage container 14 is a pump 15.
Thus, the liquid is supplied into the plating tank 1 through the liquid inlet 6. Reference numerals 16 and 17 denote on-off valves, respectively, such that the plating solution or the oxide film removal treatment liquid contained in the space 5 in the plating tank 1 is recovered in the container 12 or 14 by opening the on-off valve 16 or 17. Has become.
【００１３】１８は減圧弁であり、該減圧弁１８及びガ
ス流入口８を通ってＮ２ガス等の不活性ガス源から不活
性ガスがメッキ槽１内の空間５に供給されるようになっ
ている。また、この不活性ガスは容器１２及び１４にも
供給されるようになっている。１９〜２３はそれぞれチ
ェック弁である。Reference numeral 18 denotes a pressure reducing valve. An inert gas is supplied from the inert gas source such as N 2 gas to the space 5 in the plating tank 1 through the pressure reducing valve 18 and the gas inlet 8. ing. This inert gas is also supplied to the containers 12 and 14. 19 to 23 are check valves, respectively.
【００１４】メッキ液収容容器１２にはＣｕＳＯ４（硫
酸銅）液等の銅メッキ液、例えば硫酸銅５０〜２５０ｇ
／ｌ、硫酸４０〜２２０ｇ／ｌを主成分とした電解メッ
キ液が収容されている。また、処理液収容容器１４に
は、濃度０．１〜２０重量％のＨ２ＳＯ４、ＨＣｌ、Ｈ
ＮＯ３、Ｈ３ＰＯ４、ＨＦ等のいずれかの無機酸又は該
無機酸とＮａ又はＫとの塩、ＣＨ３ＣＯＯＨ、オキシカ
ルボン酸等のいずれかの有機酸又は該有機酸とＮａ又は
Ｋとの塩、ＮａＯＨ、ＫＯＨの塩基類を含む酸化膜除去
処理液が収容されている。In the plating solution container 12, a copper plating solution such as a CuSO 4 (copper sulfate) solution, for example, 50 to 250 g of copper sulfate is used.
/ L, 40 to 220 g / l sulfuric acid as the main components. Further, the processing liquid container 14 contains H 2 SO 4 , HCl, and H at a concentration of 0.1 to 20% by weight.
NO 3 , H 3 PO 4 , HF, etc., any inorganic acid or salt of the inorganic acid with Na or K, CH 3 COOH, any organic acid such as oxycarboxylic acid, or the organic acid and Na or K And an oxide film removing treatment solution containing salts of NaOH and KOH.
【００１５】上記構成のウエハメッキ装置において、メ
ッキを施そうとするウエハ９をメッキ槽１内に入れ、底
板３の所定の位置に載置した後、ポンプ１５を起動し、
処理液収容容器１４内の酸化膜除去処理液をメッキ槽１
の空間５内に供給し、該空間５内を酸化膜除去処理液で
満たす。この状態で、ウエハ９を陰極として、メッキ電
源１１から陽極電極１０とウエハ９の間に所定の電圧を
印加すると、水素還元反応により、ウエハ９の表面や該
表面に形成された溝や穴の下地の表面に存在する酸化膜
が除去され、該酸化膜が除去された面が活性化する。In the wafer plating apparatus having the above-described structure, the wafer 9 to be plated is put in the plating tank 1, placed on a predetermined position of the bottom plate 3, and the pump 15 is started.
The treatment solution for removing the oxide film in the treatment solution container 14 is supplied to the plating tank 1.
And the space 5 is filled with an oxide film removing treatment liquid. In this state, when a predetermined voltage is applied between the anode electrode 10 and the wafer 9 from the plating power supply 11 using the wafer 9 as a cathode, a hydrogen reduction reaction causes the surface of the wafer 9 and the grooves and holes formed on the surface to be formed. The oxide film present on the surface of the base is removed, and the surface from which the oxide film has been removed is activated.
【００１６】ここで酸化膜を除去する処理液の濃度は下
地は浸蝕せず、表面の薄い酸化膜のみを除去するため
に、除去する酸化膜の厚さに応じて０．１〜２０重量％
の範囲で濃度を設定する。濃度が２０重量％を越えると
濃度が高すぎて下地をエッチングしてしまう。Here, the concentration of the processing solution for removing the oxide film is 0.1 to 20% by weight depending on the thickness of the oxide film to be removed in order to remove only the thin oxide film on the surface without eroding the base.
Set the density within the range. If the concentration exceeds 20% by weight, the concentration is too high and the base is etched.
【００１７】次に、開閉弁１７を開いて、メッキ槽１内
の酸化膜除去処理液を処理液収容容器１４内に回収する
と同時に、メッキ槽１の空間５を減圧弁１８を通して供
給される不活性ガスと置換する。その後開閉弁１７を閉
じ、ポンプ１３を起動して、メッキ液収容容器１２内の
メッキ液をメッキ槽１の空間５内に供給し、該空間５内
で不活性ガスとメッキ液の置換を行なう。次にメッキ電
源１１から陽極電極１０とウエハ９の間に所定の電圧を
印加してメッキを行なう。このように、酸化膜除去処理
液をメッキ槽から排出し、新たにメッキ液を充填する
間、該メッキ槽１の内部に不活性ガスを充填しておくこ
とにより、酸化膜除去処理面がＯ２に曝されることがな
いから、新たにメッキ液を充填する間に再度酸化膜が形
成することがない。Next, the opening / closing valve 17 is opened to collect the oxide film removing treatment liquid in the plating tank 1 into the treatment liquid container 14, and at the same time, the space 5 in the plating tank 1 is supplied through the pressure reducing valve 18. Replace with active gas. Thereafter, the on-off valve 17 is closed, the pump 13 is started, and the plating solution in the plating solution container 12 is supplied into the space 5 of the plating tank 1, and the inert gas is replaced with the plating solution in the space 5. . Next, plating is performed by applying a predetermined voltage between the anode electrode 10 and the wafer 9 from the plating power supply 11. As described above, the oxide film removing treatment surface is filled with an inert gas by discharging the oxide film removing treatment solution from the plating tank and filling the inside of the plating tank 1 with a new plating solution. because there is not exposed to 2, will not be re-oxidized film is formed between filling the new plating solution.
【００１８】なお、上記例では、酸化膜除去処理液をメ
ッキ槽１から排出し、新たにメッキ液を充填する間、該
メッキ槽１内に不活性ガスを充填しているが、酸化膜除
去処理液にＨ２ＳＯ４を主成分とする処理液を用い、メ
ッキ液に例えば、硫酸銅５０〜２５０ｇ／ｌ、硫酸４０
〜２２０ｇ／ｌを主成分とする電解メッキ液を用いるよ
うにし、酸化膜除去処理液とメッキ液の主成分が同じも
のである場合、酸化膜除去処理液の排出とメッキ液の供
給を同時に行なって、酸化膜除去処理液とメッキ液の置
換を行ってもよい。In the above example, the processing liquid for removing the oxide film is discharged from the plating tank 1 and the plating tank 1 is filled with an inert gas while the plating liquid is newly filled. A treatment liquid containing H 2 SO 4 as a main component is used as the treatment liquid, and the plating liquid is, for example, copper sulfate 50 to 250 g / l, sulfuric acid 40
An electrolytic plating solution having a main component of up to 220 g / l is used. When the main components of the oxide film removing treatment solution and the plating solution are the same, the discharge of the oxide film removing treatment solution and the supply of the plating solution are performed simultaneously. Then, the plating solution may be replaced with the oxide film removing treatment solution.
【００１９】また、図示は省略するが、酸化膜除去処理
液をメッキ槽１から排出した後、メッキ液を充填する前
に純水からなる洗浄水を供給して該メッキ槽１内を洗浄
することにより、酸化膜除去処理液とメッキ液が異なる
性質の場合でも酸化膜除去処理とメッキ処理とを連続し
て行うことができる。この場合、洗浄水中の溶存酸素に
より再度酸化膜が形成されるのを防止するために、洗浄
水中の溶存酸素量が１ｐｐｍ以下とする。Although not shown in the drawings, after the oxide film removing treatment liquid is discharged from the plating tank 1, cleaning water made of pure water is supplied before the plating liquid is filled to clean the plating tank 1. Thus, even when the oxide film removing treatment liquid and the plating solution have different properties, the oxide film removing treatment and the plating treatment can be continuously performed. In this case, the amount of dissolved oxygen in the cleaning water is set to 1 ppm or less in order to prevent the oxide film from being formed again by the dissolved oxygen in the cleaning water.
【００２０】[0020]
【発明の効果】以上、説明したように各請求項に記載の
発明によれば、１つのメッキ槽の中で酸化膜を除去する
ための処理液と、メッキを施すメッキ液を順次入れ替え
てメッキを施すので、酸化膜の除去処理後、ウエハを空
中に曝すことがなくメッキ処理を行うことができるか
ら、メッキの際の膜抵抗値が低くなり、好適な電解メッ
キを行うことができると同時に、メッキ膜界面での密着
力の強いメッキ膜を形成できる。As described above, according to the invention described in each of the claims, plating is performed by sequentially replacing the processing solution for removing the oxide film and the plating solution for plating in one plating tank. Therefore, after the oxide film is removed, the plating process can be performed without exposing the wafer to the air, so that the film resistance during plating is reduced, and suitable electrolytic plating can be performed at the same time. Thus, a plating film having strong adhesion at the plating film interface can be formed.
【００２１】また、請求項４に記載の発明によれば、酸
化膜を除去する処理液をメッキ槽から排出し、新たにメ
ッキ液を充填する間、該メッキ槽内に不活性ガスを充填
しておくので、酸化膜除去処理面がＯ２に曝されること
がないから、メッキ液を充填する間に再度酸化膜が形成
することがない。According to the fourth aspect of the present invention, the treatment liquid for removing the oxide film is discharged from the plating tank, and while the plating liquid is newly filled, the plating tank is filled with an inert gas. since previously, there is no necessity to oxide film removal treatment surface is exposed to O 2, never again oxide film is formed between filling the plating solution.
【００２２】また、請求項５に記載の発明によれば、酸
化膜を除去するための処理液をメッキ槽から排出し、メ
ッキ液を充填する前に、該メッキ槽内に溶存酸素量が１
ｐｐｍ以下にした純水を供給し、メッキ槽内を洗浄する
ので、このように酸化膜除去処理後に純水を充填した洗
浄を行うことにより、酸化膜を除去する処理液とメッキ
液がその主成分が異なる場合でも酸化膜除去処理とメッ
キ処理とが連続して行うことができると共に、溶存酸素
量が１ｐｐｍ以下であるから、酸化膜が再度形成される
こともない。According to the fifth aspect of the present invention, the treatment liquid for removing the oxide film is discharged from the plating tank, and before the plating liquid is filled, the amount of dissolved oxygen in the plating tank is one.
Since the plating tank is cleaned by supplying pure water with a concentration of not more than ppm, the treatment liquid for removing the oxide film and the plating solution are mainly composed of the cleaning liquid filled with pure water after the oxide film removal treatment. Even when the components are different, the oxide film removing treatment and the plating treatment can be performed continuously, and the dissolved oxygen amount is 1 ppm or less, so that the oxide film is not formed again.
【図１】本発明のウエハメッキ装置の概略構成を示す図
である。FIG. 1 is a diagram showing a schematic configuration of a wafer plating apparatus of the present invention.
１ メッキ槽 ２ メッキ槽本体 ３ 底板 ４ シール部材 ５ 空間 ６ 液流入口 ７ 液流出口 ８ ガス流入口 ９ ウエハ １０ 陽極電極 １１ メッキ電源（直流電源） １２ メッキ液収容容器 １３ ポンプ １４ 処理液収容容器 １５ ポンプ １６ 開閉弁 １７ 開閉弁 １８ 減圧弁 １９〜２３ チェック弁 DESCRIPTION OF SYMBOLS 1 Plating tank 2 Plating tank main body 3 Bottom plate 4 Seal member 5 Space 6 Liquid inflow port 7 Liquid outflow port 8 Gas inflow port 9 Wafer 10 Anode electrode 11 Plating power supply (DC power supply) 12 Plating liquid storage container 13 Pump 14 Processing liquid storage container 15 Pump 16 On-off valve 17 On-off valve 18 Pressure reducing valve 19-23 Check valve
フロントページの続き (72)発明者 井上 裕章 東京都大田区羽田旭町11番１号 株式会社 荏原製作所内Continuation of front page (72) Inventor Hiroaki Inoue 11-1 Haneda Asahimachi, Ota-ku, Tokyo Inside Ebara Corporation
Claims (5)
び／又は穴の下地の表面に存在する酸化膜を除去した
後、メッキを施すウエハメッキ装置において、 １つのメッキ槽の中で酸化膜を除去するための処理液
と、メッキを施すメッキ液を順次入れ替えてメッキを施
すことを特徴とするウエハメッキ装置。1. A wafer plating apparatus for performing plating after removing an oxide film present on a surface of a wafer, a surface of a groove and / or a hole formed on the surface of the wafer, and performing plating on the oxide film in one plating tank. A wafer plating apparatus characterized in that a plating solution is removed by sequentially replacing a treatment solution for removing the plating solution and a plating solution for plating.
いて、 前記酸化膜を除去する処理液は、濃度０．１〜２０重量
％のＨ２ＳＯ４、ＨＣｌ、ＨＮＯ３、Ｈ３ＰＯ４、ＨＦ
等の無機酸又は該無機酸とＮａ又はＫとの塩、ＣＨ３Ｃ
ＯＯＨ、オキシカルボン酸等の有機酸又は該有機酸とＮ
ａ又はＫとの塩、ＮａＯＨ又はＫＯＨの塩基類を含む溶
液であり、前記ウエハを陰極とし水素還元反応により酸
化膜を除去し、表面を活性化することを特徴とするウエ
ハメッキ装置。2. The wafer plating apparatus according to claim 1, wherein the processing solution for removing the oxide film is H 2 SO 4 , HCl, HNO 3 , H 3 PO 4 , HF having a concentration of 0.1 to 20% by weight.
Or a salt of the inorganic acid with Na or K, CH 3 C
An organic acid such as OOH or oxycarboxylic acid, or the organic acid and N
A wafer plating apparatus comprising a solution containing a salt with a or K, a base of NaOH or KOH, and using the wafer as a cathode to remove an oxide film by a hydrogen reduction reaction and activate the surface.
置において、 前記メッキ液は硫酸銅５０〜２５０ｇ／ｌ、硫酸４０〜
２２０ｇ／ｌを主成分とした電解メッキ液であることを
特徴とするウエハメッキ装置。3. The wafer plating apparatus according to claim 1, wherein the plating solution is copper sulfate 50 to 250 g / l, sulfuric acid 40 to 250 g / l.
A wafer plating apparatus comprising an electrolytic plating solution containing 220 g / l as a main component.
エハメッキ装置において、 前記酸化膜を除去する処理液を前記メッキ槽から排出
し、新たにメッキ液を充填する間、該メッキ槽内に不活
性ガスを充填しておくことを特徴とするウエハメッキ装
置。4. The wafer plating apparatus according to claim 1, wherein a treatment liquid for removing the oxide film is discharged from the plating tank, and the plating liquid is filled in the plating tank while the plating liquid is newly filled. A wafer plating apparatus characterized in that an inert gas is filled in the apparatus.
エハメッキ装置において、 前記酸化膜を除去するための処理液を前記メッキ槽から
排出し、前記メッキ液を充填する前に、該メッキ槽内に
溶存酸素量が１ｐｐｍ以下にした純水を供給し、メッキ
槽内を洗浄することを特徴としたウエハメッキ装置。5. The wafer plating apparatus according to claim 1, wherein a treatment liquid for removing the oxide film is discharged from the plating tank, and the plating liquid is filled before filling with the plating liquid. A wafer plating apparatus characterized in that pure water having a dissolved oxygen content of 1 ppm or less is supplied into a tank and the inside of the plating tank is washed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14301998A JPH11335896A (en) | 1998-05-25 | 1998-05-25 | Wafer plating apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14301998A JPH11335896A (en) | 1998-05-25 | 1998-05-25 | Wafer plating apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11335896A true JPH11335896A (en) | 1999-12-07 |
Family
ID=15329048
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14301998A Pending JPH11335896A (en) | 1998-05-25 | 1998-05-25 | Wafer plating apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11335896A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001024257A1 (en) * | 1999-09-30 | 2001-04-05 | Lam Research Corporation | Methods and apparatus for treating seed layer in copper interconnctions |
| JP2001152387A (en) * | 1999-09-16 | 2001-06-05 | Ishihara Chem Co Ltd | Void-free copper plating method |
| JP2008502806A (en) * | 2004-06-10 | 2008-01-31 | アプライド マテリアルズ インコーポレイテッド | Barrier layer surface treatment method enabling direct copper plating on barrier metal |
| JP2009004807A (en) * | 2008-09-12 | 2009-01-08 | Toshiba Corp | Method of manufacturing semiconductor device and apparatus for manufacturing the semiconductor device |
-
1998
- 1998-05-25 JP JP14301998A patent/JPH11335896A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001152387A (en) * | 1999-09-16 | 2001-06-05 | Ishihara Chem Co Ltd | Void-free copper plating method |
| WO2001024257A1 (en) * | 1999-09-30 | 2001-04-05 | Lam Research Corporation | Methods and apparatus for treating seed layer in copper interconnctions |
| US6423200B1 (en) * | 1999-09-30 | 2002-07-23 | Lam Research Corporation | Copper interconnect seed layer treatment methods and apparatuses for treating the same |
| JP2003510846A (en) * | 1999-09-30 | 2003-03-18 | ラム リサーチ コーポレーション | Processing method and processing apparatus for seed layer of copper connection |
| JP2008502806A (en) * | 2004-06-10 | 2008-01-31 | アプライド マテリアルズ インコーポレイテッド | Barrier layer surface treatment method enabling direct copper plating on barrier metal |
| JP2009004807A (en) * | 2008-09-12 | 2009-01-08 | Toshiba Corp | Method of manufacturing semiconductor device and apparatus for manufacturing the semiconductor device |
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