JPH11314995A - Molecular beam source shutter for molecular beam epitaxy and molecular beam epitaxy apparatus as well as production of epitaxial film using this molecular beam source shutter - Google Patents
Molecular beam source shutter for molecular beam epitaxy and molecular beam epitaxy apparatus as well as production of epitaxial film using this molecular beam source shutterInfo
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- JPH11314995A JPH11314995A JP13773898A JP13773898A JPH11314995A JP H11314995 A JPH11314995 A JP H11314995A JP 13773898 A JP13773898 A JP 13773898A JP 13773898 A JP13773898 A JP 13773898A JP H11314995 A JPH11314995 A JP H11314995A
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- Prior art keywords
- molecular beam
- shutter
- beam source
- source shutter
- epitaxial film
- Prior art date
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- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、分子線エピタキシ
ー法によりエピタキシャル膜を成長させる分子線エピタ
キシー装置において、開閉操作によってＫセルからの分
子線を放射したり停止する分子線源シャッタに関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a molecular beam source shutter for emitting or stopping a molecular beam from a K cell by opening and closing operations in a molecular beam epitaxy apparatus for growing an epitaxial film by a molecular beam epitaxy method. .
【０００２】[0002]
【従来の技術】分子線エピタキシー（以下、ＭＢＥと略
称することがある）法は、薄膜成長室を１０-6〜１０
-11 Ｔｏｒｒという超高真空下、ＭＢＥ用分子線源ルツ
ボ（以下、ＭＢＥルツボと略称することがある）を装着
したＫセルと呼ばれる分子線放射装置で、ＭＢＥルツボ
を５００〜１５００℃に加熱し、分子線源シャッタを開
けて分子線原料である溶融金属から放射する分子線を、
加熱された半導体基板上に当てることにより、基板上に
エピタキシャル膜の成長を行うもので、数原子層レベル
の制御が可能な薄膜製造法であり、特に、ＧａＡｓ等の
化合物半導体のエピタキシー膜の製造に広く用いられて
いる。2. Description of the Related Art In a molecular beam epitaxy (hereinafter sometimes abbreviated as MBE) method, a thin film growth chamber is kept at 10 -6 to 10 -10.
Under an ultra-high vacuum of -11 Torr, a MBE crucible is heated to 500 to 1500 ° C. by a molecular beam radiating device called a K cell equipped with a MBE molecular beam crucible (hereinafter sometimes abbreviated as MBE crucible). Opening the molecular beam source shutter, the molecular beam emitted from the molten metal that is the molecular beam raw material,
An epitaxial film is grown on a heated semiconductor substrate by growing an epitaxial film on the substrate. This method is a thin film manufacturing method capable of controlling several atomic layers. In particular, it is a method for manufacturing an epitaxial film of a compound semiconductor such as GaAs. Widely used for
【０００３】従来、このようなＭＢＥ法において、シャ
ッタを開けて分子線ビームを発生させる際に、発生直後
と数秒経過後では分子線ビーム強度が変化する現象があ
り、フラックストランジェントと呼ばれている（図６参
照）。これは、シャッタが開くことにより分子線源ルツ
ボからの輻射熱（放射熱）の損失が増え、一時的に分子
線原料融液の温度が下がるため、分子線ビーム強度が低
下してしまうのである（図５（ａ）、（ｂ）参照）。分
子線ビーム強度が低下すると、エピタキシャル膜中の原
子組成比が変動してしまい、エピタキシャル膜付き半導
体ウエーハの品質、歩留りの低下を引き起こしてしま
う。Conventionally, in such an MBE method, when a molecular beam is generated by opening a shutter, there is a phenomenon that the molecular beam intensity changes immediately after the generation and after a lapse of several seconds, which is called a flux transient. (See FIG. 6). This is because the loss of radiant heat (radiant heat) from the molecular beam source crucible increases when the shutter opens, and the temperature of the molecular beam raw material melt temporarily drops, so that the molecular beam intensity decreases. (See FIGS. 5A and 5B). When the molecular beam intensity decreases, the atomic composition ratio in the epitaxial film fluctuates, and the quality and yield of the semiconductor wafer with the epitaxial film are reduced.
【０００４】この問題を解決するために、シャッタに角
度を付けて分子線ビーム強度の突出を制御しようという
提案（村越義修他、電子材料1991別冊、P.36〜41）もな
されているが、完全なものではなかった。In order to solve this problem, there has been a proposal to control the protrusion of the molecular beam intensity by setting an angle to the shutter (Yoshiharu Murakoshi et al., Electronic Materials 1991, Supplement, pp. 36-41). Was not perfect.
【０００５】[0005]
【発明が解決しようとする課題】本発明は、このような
問題点に鑑みなされたもので、シャッタが開いた際に、
原料融液の温度が下がらないようにして、分子線ビーム
強度の低下を防止し、均一な分子線が安定して放射可能
な分子線源シャッタを、簡単かつ低コストで提供し、分
子線エピタキシー操業の安定化とエピタキシャル膜中の
原子組成比の変動を抑えて、エピタキシャル膜付き半導
体ウエーハの品質と歩留りの改善を図ることを主たる目
的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has been made in consideration of the above circumstances.
By providing a simple and low-cost molecular beam source shutter that prevents the temperature of the raw material melt from lowering, prevents a decrease in the molecular beam intensity, and can stably emit a uniform molecular beam. A main object is to improve the quality and yield of a semiconductor wafer with an epitaxial film by stabilizing the operation and suppressing the fluctuation of the atomic composition ratio in the epitaxial film.
【０００６】[0006]
【課題を解決するための手段】このような課題を解決す
るため、本発明の請求項１に記載した発明は、分子線エ
ピタキシーの分子線を放射するＫセルに用いられる分子
線源シャッタにおいて、該シャッタに冷却機構を設けた
ことを特徴とする分子線エピタキシー用分子線源シャッ
タである。In order to solve such a problem, the invention described in claim 1 of the present invention relates to a molecular beam source shutter used in a K cell that emits a molecular beam of molecular beam epitaxy. A molecular beam source shutter for molecular beam epitaxy, wherein a cooling mechanism is provided in the shutter.
【０００７】このように、分子線エピタキシー用分子線
源シャッタとして、シャッタに冷却機構を設け、冷媒を
流してシャッタを冷却しながらシャッタを開くと、シャ
ッタを開いた直後に起こる分子線ビーム強度の突出現象
が殆どなくなり、シャッタを閉じるまでの間、極めて安
定した一定強度の分子線を放射することができる。従っ
て、ウエーハ上に生成したエピタキシャル膜は、原子組
成比が一定で、膜厚もバラツキが殆どなく均一であり、
エピタキシャル膜付き半導体ウエーハの品質と歩留りの
向上を図ることができる。この際、シャッタの冷却度合
いは、シャッタが開いても原料融液からの輻射熱損失が
変化しないように、シャッタとＭＢＥ装置のチャンバー
内壁とをほぼ同じ温度に保つようにするのが望ましい。As described above, when a shutter is provided with a cooling mechanism as a molecular beam source shutter for molecular beam epitaxy and the shutter is opened while cooling the shutter by flowing a refrigerant, the intensity of the molecular beam intensity occurring immediately after the shutter is opened is reduced. The protrusion phenomenon is almost eliminated, and a very stable molecular beam of constant intensity can be emitted until the shutter is closed. Therefore, the epitaxial film formed on the wafer has a uniform atomic composition ratio, has almost no variation in film thickness, and is uniform.
The quality and yield of the semiconductor wafer with an epitaxial film can be improved. At this time, it is desirable to keep the shutter and the inner wall of the chamber of the MBE apparatus at substantially the same temperature so that the radiant heat loss from the raw material melt does not change even when the shutter is opened.
【０００８】この場合、請求項２に記載したように、前
記冷却機構が、冷媒として液体窒素または液体ヘリウム
を該シャッタ内を循環させるものであることを特徴とす
る分子線エピタキシー用分子線源シャッタとすることが
できる。通常、ＭＢＥ装置のチャンバー内は液体窒素に
よって冷却されているため、シャッタの冷却用冷媒とし
てこれらの不活性液体を使用すれば、シャッタを開いた
時にも温度環境の変化が起こらず、安定して分子線ビー
ムを放射することができる。また、安全上極めて有効で
あり、熱容量も大きいので冷却速度も速く、高い冷却効
果を得ることができる。そしてこの場合、請求項３に記
載したように、前記冷却機構の冷媒を、分子線エピタキ
シー装置のチャンバーを冷却する冷媒と同じものとする
ことが望ましく、このようにすれば、シャッタの温度を
チャンバーの内壁温度とほぼ同じ温度にすることができ
るのでシャッタを開いた時にも温度環境の変化が起こら
ず、安定して分子線ビームを放射することができる。In this case, as set forth in claim 2, the cooling mechanism circulates liquid nitrogen or liquid helium as a coolant in the shutter, and the molecular beam source shutter for molecular beam epitaxy. It can be. Usually, since the inside of the chamber of the MBE apparatus is cooled by liquid nitrogen, if these inert liquids are used as the cooling medium for the shutter, the temperature environment does not change even when the shutter is opened, and the temperature environment does not change. A molecular beam can be emitted. Further, it is extremely effective for safety and has a large heat capacity, so that the cooling rate is high and a high cooling effect can be obtained. In this case, as described in claim 3, it is desirable that the refrigerant of the cooling mechanism is the same as the refrigerant that cools the chamber of the molecular beam epitaxy apparatus. Since the temperature of the inner wall can be almost the same as the inner wall temperature, the temperature environment does not change even when the shutter is opened, and the molecular beam can be stably emitted.
【０００９】そして、本発明の請求項４に記載したよう
に、前記分子線源シャッタの材料が、熱伝導率が３０Ｗ
／ｍ・Ｋ以上でかつ耐熱性が６００℃以上のものとする
ことができる。このようにシャッタの材料として熱伝導
率が高く、耐熱性も十分ある高融点金属、合金、セラミ
ックス等を使用すれば、高温環境下においてもシャッタ
の冷却効果が発揮され、分子線ビーム強度が安定化し、
組成の均一なエピタキシャル膜を成膜することができ、
エピタキシャル膜付き半導体ウエーハの品質、歩留りの
向上を図ることができる。According to a fourth aspect of the present invention, the material of the molecular beam source shutter has a thermal conductivity of 30 W.
/ M · K or more and heat resistance of 600 ° C. or more. If a high melting point metal, alloy, ceramics, etc., which have high thermal conductivity and sufficient heat resistance, are used as a material for the shutter as described above, the cooling effect of the shutter is exhibited even in a high temperature environment, and the molecular beam intensity is stable. And
An epitaxial film having a uniform composition can be formed,
The quality and yield of the semiconductor wafer with an epitaxial film can be improved.
【００１０】さらにこの場合、請求項５に記載したよう
に、前記分子線源シャッタの材質を、ＣＶＤ法で作製さ
れたＢＮ、ＡｌＮ、ＳｉＣまたはＳｉ3 Ｎ4 とすること
できる。このように、セラミックスとしてＣＶＤ法で作
製されたＢＮ、ＡｌＮ、ＳｉＣまたはＳｉ3 Ｎ4 を採用
すれば、これらはいずれも熱伝導率が高く、耐熱性も高
いのでシャッタの材質として好適に使用することができ
る。従って、高温環境下においてもシャッタの冷却効果
が十分に発揮され、分子線ビーム強度が安定化し、組成
の均一なエピタキシャル膜を成膜することができ、エピ
タキシャル膜付き半導体ウエーハの品質、歩留りの高い
改善効果を得ることができる。In this case, the material of the molecular beam source shutter may be BN, AlN, SiC or Si 3 N 4 manufactured by a CVD method. As described above, if BN, AlN, SiC or Si 3 N 4 manufactured by the CVD method is adopted as ceramics, these materials have high thermal conductivity and high heat resistance, so that they are preferably used as a material of the shutter. be able to. Therefore, even under a high-temperature environment, the cooling effect of the shutter is sufficiently exhibited, the molecular beam intensity is stabilized, an epitaxial film having a uniform composition can be formed, and the quality and yield of the semiconductor wafer with the epitaxial film are high. An improvement effect can be obtained.
【００１１】そして、本発明の請求項６に記載した発明
は、前記請求項１ないし請求項５に記載の分子線源シャ
ッタを用いた分子線エピタキシー装置である。このよう
な本発明の分子線源シャッタを採用したＭＢＥ装置で
は、極めて高品質のエピタキシャル膜を成長させること
ができる。さらに本発明の請求項７に記載したように、
前記請求項１ないし請求項５のいずれか１項に記載の分
子線エピタキシー用分子線源シャッタを用いた装置によ
り、エピタキシャル膜を成長させる方法によれば、強度
の安定したビームによって極めて高品質のエピタキシャ
ル膜付き半導体ウエーハを製造することができる。According to a sixth aspect of the present invention, there is provided a molecular beam epitaxy apparatus using the molecular beam source shutter according to the first to fifth aspects. In an MBE apparatus employing such a molecular beam source shutter of the present invention, an extremely high quality epitaxial film can be grown. Further, as described in claim 7 of the present invention,
According to the method of growing an epitaxial film by using the apparatus using the molecular beam source shutter for molecular beam epitaxy according to any one of claims 1 to 5, extremely high quality is achieved by a beam having a stable intensity. A semiconductor wafer with an epitaxial film can be manufactured.
【００１２】[0012]
【発明の実施の形態】以下、本発明の実施の形態を詳細
に説明する。本発明者らは、分子線エピタキシーにおい
て、Ｋセルのシャッタを開いた際に、分子線の放射直
後、一端上昇した分子線ビーム強度が急激に下がる現象
があり、その原因が、シャッタが開くことによりルツボ
からの輻射熱の損失が増え、ルツボ内の原料融液の温度
が下がることにあり、この融液の温度が変化しないよう
にするには、シャッタを冷却して、シャッタ開閉時の熱
的環境に変化がないように、シャッタ温度を装置チャン
バー内壁温度とほぼ同じにすればよいことを見出し、諸
条件を精査して本発明を完成させたものである。Embodiments of the present invention will be described below in detail. The present inventors have found that in molecular beam epitaxy, when the shutter of the K cell is opened, immediately after the emission of the molecular beam, the intensity of the molecular beam that has once risen suddenly drops, and the cause is that the shutter is opened. As a result, the loss of radiant heat from the crucible increases, and the temperature of the raw material melt in the crucible decreases. To prevent the temperature of the melt from changing, the shutter must be cooled to reduce the thermal The inventor has found that the temperature of the shutter should be substantially the same as the temperature of the inner wall of the apparatus chamber so that there is no change in the environment.
【００１３】本発明の冷却機構を有する分子線源シャッ
タを設けたＭＢＥ装置の一例を挙げると、図１に示した
様に、ＭＢＥ装置１は、チャンバー８内に分子線を放射
するＫセル２と基板ホルダに保持された基板９と分子線
の放射を開閉制御する分子線源シャッタ４から構成され
ている。Ｋセル２は、原料７を収容するＰＢＮ（熱分解
窒化硼素）製の円錐形ルツボ３とヒータ５から成り、ヒ
ートシールド６（断熱材）で被覆されている。As an example of an MBE apparatus provided with a molecular beam source shutter having a cooling mechanism according to the present invention, as shown in FIG. 1, an MBE apparatus 1 has a K cell 2 for emitting a molecular beam into a chamber 8. And a molecular beam source shutter 4 for controlling opening and closing of radiation of molecular beams. The K cell 2 is composed of a conical crucible 3 made of PBN (pyrolytic boron nitride) containing a raw material 7 and a heater 5, and is covered with a heat shield 6 (heat insulating material).
【００１４】本発明の分子線源シャッタ４は、その一例
として図２に示したように、薄い箱形のシャッタ４に、
冷却機構１１として冷媒流入管１２と冷媒流出管１３を
設け、冷媒を循環させるようにしている。シャッタ４の
開閉は、ベローズ１０を用いて高真空気密を保持し、流
体シリンダ（図示せず）で前後進させて行う。The molecular beam source shutter 4 of the present invention has a thin box-shaped shutter 4 as shown in FIG.
As the cooling mechanism 11, a refrigerant inflow pipe 12 and a refrigerant outflow pipe 13 are provided to circulate the refrigerant. The opening and closing of the shutter 4 is performed by using a bellows 10 to maintain airtightness in a high vacuum and moving the shutter 4 back and forth by a fluid cylinder (not shown).
【００１５】分子線源シャッタ４の冷却機構１１の別の
例を挙げると、前記冷媒流入管１２の先端を毛細管と
し、液体窒素を気化させて気化潜熱で冷却し、冷媒ガス
を回収し液化して循環する方法でも良い。As another example of the cooling mechanism 11 of the molecular beam source shutter 4, the tip of the refrigerant inlet pipe 12 is a capillary tube, and liquid nitrogen is vaporized and cooled by latent heat of vaporization, and refrigerant gas is recovered and liquefied. A circulation method may be used.
【００１６】本発明の最大の特徴は、分子線エピタキシ
ーの分子線を放射するＫセルに用いられる分子線源シャ
ッタにおいて、該シャッタに冷却機構を設けたことであ
る。このように、分子線エピタキシー用分子線源シャッ
タとして、シャッタに冷却機構を設け、冷媒を流してシ
ャッタを冷却しながらシャッタを開くと、シャッタを開
いた直後に起こる分子線ビーム強度の突出現象が殆どな
くなり、シャッタを閉じるまでの間、極めて安定した一
定強度の分子線を放射することができる。従って、ウエ
ーハ上に生成したエピタキシャル膜は、原子組成比が一
定で、膜厚もバラツキなく均一であり、エピタキシャル
膜付き半導体ウエーハの品質と歩留りの向上を図ること
ができる。The most significant feature of the present invention is that a cooling mechanism is provided in a shutter for a molecular beam source used for a K cell that emits a molecular beam of molecular beam epitaxy. As described above, when the shutter is provided with a cooling mechanism as a molecular beam source shutter for molecular beam epitaxy, and the shutter is opened while cooling the shutter by flowing a coolant, the projection phenomenon of the molecular beam intensity that occurs immediately after the shutter is opened is reduced. Very little, and a very stable molecular beam of constant intensity can be emitted until the shutter is closed. Accordingly, the epitaxial film formed on the wafer has a constant atomic composition ratio and a uniform film thickness without variation, thereby improving the quality and yield of the semiconductor wafer with the epitaxial film.
【００１７】この際、シャッタの冷却度合いは、シャッ
タが開いている時と、閉じている時とでシャッタ回りの
熱的環境に変化がないように、すなわちシャッタが開い
ても原料融液からの輻射熱損失が変化しないように、シ
ャッタとＭＢＥ装置のチャンバー内壁とをほぼ同じ温度
に保つようにするのが望ましい。At this time, the cooling degree of the shutter is determined so that the thermal environment around the shutter does not change between when the shutter is open and when the shutter is closed, that is, even when the shutter is opened, the temperature of the raw material melt is reduced. It is desirable to keep the shutter and the inner wall of the chamber of the MBE apparatus at substantially the same temperature so that the radiation heat loss does not change.
【００１８】従来のシャッタで閉の状態では、融液から
の輻射熱の大部分がシャッタで反射してシャッタやルツ
ボの開口部回りで蓄熱していたが、シャッタを開くと同
時に放熱と分子線放射が突出し、それに伴って融液温度
が低下し、徐々に分子線ビーム強度が弱くなり、ある所
で平衡状態になる経過をたどっていた（図５の（ａ）、
（ｂ）、図６参照）。When the shutter is closed by the conventional shutter, most of the radiant heat from the melt is reflected by the shutter and stored around the opening of the shutter or crucible. Protrude, the melt temperature decreases accordingly, the molecular beam intensity gradually weakens, and follows a process of equilibrium at a certain place (FIG. 5 (a),
(B), see FIG. 6).
【００１９】一方、本発明の冷却機構付きシャッタを使
用した場合、シャッタ閉の状態では、融液からの輻射熱
の大部分がシャッタ内を循環する冷媒に吸収されて、シ
ャッタで反射していた反射熱が殆どなくなり、Ｋセルの
熱的環境がシャッタ開で平衡状態の時とほぼ同様になる
ので、融液の温度もシャッタの開閉に関わらず変動が少
なく、従って、分子線ビーム強度の突出も急激な下降も
なく、ほぼ一定強度で安定したビームが得られる（図３
参照）。On the other hand, when the shutter with the cooling mechanism of the present invention is used, when the shutter is closed, most of the radiant heat from the melt is absorbed by the refrigerant circulating in the shutter, and the reflected light is reflected by the shutter. Since there is almost no heat and the thermal environment of the K-cell is almost the same as when the shutter is open and in the equilibrium state, the temperature of the melt is also small regardless of the opening and closing of the shutter. A stable beam with almost constant intensity can be obtained without a sudden drop (Fig. 3
reference).
【００２０】この場合、前記冷却機構が、冷媒として液
体窒素または液体ヘリウムを該シャッタ内を循環させる
ものがよい。通常、ＭＢＥ装置のチャンバー内は液体窒
素によって冷却されているため、シャッタの冷却用冷媒
としてこれらの不活性液体を使用すれば、シャッタを開
いた時にも温度環境の変化が起こらず、安定して分子線
ビームを放射することができる。また、安全上極めて有
効であり、熱容量も大きいので冷却速度も速く、高い冷
却効果を得ることができる。特に、シャッタの冷媒をチ
ャンバーを冷却する冷媒と同じものとすれば、シャッタ
の温度をチャンバーの内壁温度とほぼ同じ温度にするこ
とが容易にできるので、シャッタを開いた時にも温度環
境の変化が起こらず、安定して分子線ビームを放射する
ことができる。In this case, it is preferable that the cooling mechanism circulates liquid nitrogen or liquid helium as a refrigerant in the shutter. Usually, since the inside of the chamber of the MBE apparatus is cooled by liquid nitrogen, if these inert liquids are used as the cooling medium for the shutter, the temperature environment does not change even when the shutter is opened, and the temperature environment does not change. A molecular beam can be emitted. Further, it is extremely effective for safety and has a large heat capacity, so that the cooling rate is high and a high cooling effect can be obtained. In particular, if the coolant of the shutter is the same as the coolant that cools the chamber, the temperature of the shutter can be easily made substantially the same as the inner wall temperature of the chamber, so that the temperature environment changes even when the shutter is opened. It does not occur, and can stably emit a molecular beam.
【００２１】そして、分子線源シャッタの材料として
は、熱伝導率が３０Ｗ／ｍ・Ｋ以上でかつ耐熱性が６０
０℃以上のものがよい。熱伝導率が３０Ｗ／ｍ・Ｋ以上
のものとすると、冷却効率が一層よくなってビーム強度
の変動によりよく追随できるようになる。また、耐熱性
が６００℃以上のものとするとＭＢＥ装置の熱的環境に
よりよく適合した装置とすることができる。このように
シャッタの材料として熱伝導率が高く、耐熱性もある金
属、合金、セラミックス等を使用すれば、高温環境下に
おいてもシャッタの冷却効果が発揮され、分子線ビーム
強度が安定化し、組成の均一なエピタキシャル膜を成膜
することができ、エピタキシャル膜付き半導体ウエーハ
の品質、歩留りを著しく改善することができる。The material of the molecular beam source shutter has a heat conductivity of 30 W / m · K or more and a heat resistance of 60 W / m · K.
Those having a temperature of 0 ° C or higher are preferred. When the thermal conductivity is 30 W / m · K or more, the cooling efficiency is further improved, and it is possible to follow the fluctuation of the beam intensity better. Further, when the heat resistance is 600 ° C. or higher, the apparatus can be adapted more to the thermal environment of the MBE apparatus. If a metal, alloy, ceramics, or the like having high thermal conductivity and heat resistance is used as a material for the shutter as described above, the cooling effect of the shutter is exhibited even in a high-temperature environment, the molecular beam intensity is stabilized, and the composition is improved. , A uniform epitaxial film can be formed, and the quality and yield of a semiconductor wafer with an epitaxial film can be remarkably improved.
【００２２】さらにこの場合、前記分子線源シャッタの
材質を、ＣＶＤ法で作製されたＢＮ、ＡｌＮ、ＳｉＣま
たはＳｉ3 Ｎ4 とすることできる。このように、セラミ
ックスとしてＣＶＤ法で作製されたＢＮ、ＡｌＮ、Ｓｉ
ＣまたはＳｉ3 Ｎ4 を採用すれば、これらはいずれも緻
密で機械的強度に優れ、熱伝導率が高く、耐熱性も高い
のでシャッタの材質として好適に使用することができ
る。従って、高温環境下においてもシャッタの冷却効果
が十分に発揮され、分子線ビーム強度が安定化し、組成
の均一なエピタキシャル膜を成膜することができ、エピ
タキシャル膜付き半導体ウエーハの品質と歩留りの向上
を図ることができる。これらは、シャッタ全体をこれら
の材質としてもよいし、あるいは、耐熱性金属等の成形
体の表面にこれらを蒸着したものとしてもよい。Further, in this case, the material of the molecular beam source shutter can be BN, AlN, SiC or Si 3 N 4 manufactured by the CVD method. Thus, BN, AlN, Si produced by the CVD method as ceramics
If C or Si 3 N 4 is adopted, each of them is dense, has excellent mechanical strength, has high thermal conductivity, and has high heat resistance, and therefore can be suitably used as a shutter material. Therefore, even in a high temperature environment, the cooling effect of the shutter is sufficiently exhibited, the molecular beam intensity is stabilized, an epitaxial film having a uniform composition can be formed, and the quality and yield of the semiconductor wafer with the epitaxial film can be improved. Can be achieved. These may be made of these materials for the entire shutter, or may be formed by evaporating them on the surface of a molded body such as a heat-resistant metal.
【００２３】[0023]
【実施例】以下、本発明の実施例を挙げて具体的に説明
するが、本発明はこれらに限定されるものではない。 （実施例１）図１に示したようなＭＢＥ装置１におい
て、Ｋセル２中のＰＢＮルツボ３に分子線原料７として
Ｇａを入れ、チャンバー８内を真空排気し、１０-11 Ｔ
ｏｒｒまで減圧し、ルツボ３を９６０℃まで徐々に加熱
した。シャッタ４は、材質を熱分解窒化ほう素（ＰＢ
Ｎ）とし、図２のような冷却機構１１を設け、液体窒素
を循環させてマイナス１５０℃以下に冷却した。EXAMPLES The present invention will now be described specifically with reference to examples of the present invention, but the present invention is not limited to these examples. (Embodiment 1) In the MBE apparatus 1 as shown in FIG. 1, Ga as a molecular beam source 7 is put into a PBN crucible 3 in a K cell 2, and the chamber 8 is evacuated to 10 −11 T.
The pressure was reduced to orr, and the crucible 3 was gradually heated to 960 ° C. The shutter 4 is made of pyrolytic boron nitride (PB).
N), a cooling mechanism 11 as shown in FIG. 2 was provided, and liquid nitrogen was circulated to cool to −150 ° C. or less.
【００２４】次いでシャッタを開閉させることによって
分子線ビームの発射、停止を行い、その際のＧａの基板
上での成長速度から分子線ビーム強度の推移を調査した
ところ、図３に示したように、シャッタ開放直後も安定
したものとなり、均一にエピタキシャル成長をすること
ができるものであった。Next, the molecular beam was emitted and stopped by opening and closing the shutter, and the transition of the molecular beam intensity was examined from the growth rate of Ga on the substrate at that time. As shown in FIG. Thus, it was stable immediately after the shutter was opened, and uniform epitaxial growth could be achieved.
【００２５】（実施例２）図２に示した冷却機構１１を
備えたシャッタ４の表面に熱分解窒化硼素（ＰＢＮ）膜
を固定した他は実施例１と同様な方法でＧａの分子線ビ
ーム強度を調べたところ、実施例１とほぼ同様に図３の
ような安定したものとなった。さらにこのものはフレー
ク状のゴミの発生も少なく、エピタキシャル膜内の欠陥
も極めて少ないものとなった。(Embodiment 2) A molecular beam of Ga is formed in the same manner as in Embodiment 1 except that a pyrolytic boron nitride (PBN) film is fixed on the surface of the shutter 4 having the cooling mechanism 11 shown in FIG. When the strength was examined, it became stable as shown in FIG. In addition, the flake-like dust was less likely to occur, and the defects in the epitaxial film were extremely small.
【００２６】（比較例）図４に示したような、従来の冷
却機構を持たないシャッタを使用した以外は、実施例と
同一条件でＧａの分子線ビーム強度を調べたところ、図
６のようにシャッタ開放時に分子線ビーム強度の立ち上
がりが大きくなった後、徐々に小さくなって約１０秒位
でやっと安定した。この分子線ビームで成長したエピタ
キシャル膜は、その特性のバラツキが大きいものとな
り、歩留りも低下した。(Comparative Example) The molecular beam intensity of Ga was examined under the same conditions as in the example except that a conventional shutter having no cooling mechanism as shown in FIG. 4 was used. After the rising of the molecular beam intensity increased when the shutter was opened, the intensity gradually decreased and became stable in about 10 seconds. The epitaxial film grown by this molecular beam had large variations in its characteristics, and the yield was reduced.
【００２７】なお、本発明は、上記実施形態に限定され
るものではない。上記実施形態は、例示であり、本発明
の特許請求の範囲に記載された技術的思想と実質的に同
一な構成を有し、同様な作用効果を奏するものは、いか
なるものであっても本発明の技術的範囲に包含される。The present invention is not limited to the above embodiment. The above embodiment is an exemplification, and has substantially the same configuration as the technical idea described in the scope of the claims of the present invention. It is included in the technical scope of the invention.
【００２８】例えば、本発明の冷却機構は、シャッタを
有効に冷却して、開閉時に熱環境の変化を、抑制できる
ものであれば、原則としてどのようなものでも良く、図
２に紹介したものに限定されるものではない。For example, the cooling mechanism of the present invention may be basically any type as long as it can effectively cool the shutter and suppress a change in the thermal environment during opening and closing. However, the present invention is not limited to this.
【００２９】[0029]
【発明の効果】本発明によれば、ＭＢＥ装置で起こり易
いシャッタ開放時の分子線ビーム強度の突出現象を防止
することができ、シャッタを閉じるまでの間、極めて安
定した一定強度の分子線を放射することができる。従っ
て、基板上に生成したエピタキシャル膜は、原子組成比
が一定で、膜厚もバラツキなく均一であり、エピタキシ
ャル膜付き半導体ウエーハの品質と歩留りの向上を図る
ことができる。According to the present invention, it is possible to prevent a molecular beam intensity from protruding when the shutter is opened, which is likely to occur in the MBE apparatus. Can radiate. Therefore, the epitaxial film formed on the substrate has a constant atomic composition ratio, a uniform thickness without variation, and can improve the quality and yield of the semiconductor wafer with the epitaxial film.
【図１】本発明の分子線源シャッタを設けたＭＢＥ装置
の実施形態の一例を示す縦断面説明図である。FIG. 1 is an explanatory longitudinal sectional view showing an example of an embodiment of an MBE apparatus provided with a molecular beam source shutter according to the present invention.
【図２】本発明の冷却機構を備えた分子線源シャッタの
一例を示す縦断面説明図である。FIG. 2 is an explanatory longitudinal sectional view showing an example of a molecular beam source shutter provided with a cooling mechanism of the present invention.
【図３】本発明の冷却機構を備えた分子線源シャッタを
使用した場合、シャッタ開放後の分子線ビーム強度の推
移を示すグラフである。FIG. 3 is a graph showing a transition of a molecular beam intensity after a shutter is opened when a molecular beam source shutter having a cooling mechanism of the present invention is used.
【図４】従来の分子線源シャッタを示す縦断面説明図で
ある。FIG. 4 is an explanatory longitudinal sectional view showing a conventional molecular beam source shutter.
【図５】従来の分子線源シャッタを開閉した場合の輻射
熱の状態を示す説明図である。（ａ）シャッタが開いて
いる場合、（ｂ）シャッタが閉じている場合。FIG. 5 is an explanatory diagram showing a state of radiant heat when a conventional molecular beam source shutter is opened and closed. (A) When the shutter is open, (b) When the shutter is closed.
【図６】従来の分子線源シャッタを使用した場合、シャ
ッタ開放後の分子線ビーム強度の推移を示すグラフであ
る。FIG. 6 is a graph showing a transition of a molecular beam intensity after a shutter is opened when a conventional molecular beam source shutter is used.
１…ＭＢＥ装置、 ２…Ｋセル、 ３…分子線源ルツ
ボ、 ４…シャッタ、５…ヒータ、 ６…ヒートシール
ド、 ７…分子線原料、８…チャンバー、 ９…基板、
１０…ベローズ、 １１…冷却機構、１２…冷媒流入
管、 １３…冷媒流出管。DESCRIPTION OF SYMBOLS 1 ... MBE apparatus, 2 ... K cell, 3 ... Molecular beam source crucible, 4 ... Shutter, 5 ... Heater, 6 ... Heat shield, 7 ... Molecular beam raw material, 8 ... Chamber, 9 ... Substrate,
10 bellows, 11 cooling mechanism, 12 refrigerant inlet pipe, 13 refrigerant outlet pipe.
Claims (7)
Ｋセルに用いられる分子線源シャッタにおいて、該シャ
ッタに冷却機構を設けたことを特徴とする分子線エピタ
キシー用分子線源シャッタ。1. A molecular beam source shutter for a molecular beam epitaxy, wherein a cooling mechanism is provided in the shutter used in a K cell that emits a molecular beam of molecular beam epitaxy.
たは液体ヘリウムを該シャッタ内を循環させるものであ
ることを特徴とする請求項１に記載した分子線エピタキ
シー用分子線源シャッタ。2. The molecular beam source shutter for molecular beam epitaxy according to claim 1, wherein the cooling mechanism circulates liquid nitrogen or liquid helium as a coolant in the shutter.
シー装置のチャンバーを冷却する冷媒と同じものとする
ことを特徴とする請求項１または請求項２に記載した分
子線エピタキシー用分子線源シャッタ。3. The molecular beam source shutter for molecular beam epitaxy according to claim 1, wherein a coolant of the cooling mechanism is the same as a coolant for cooling a chamber of the molecular beam epitaxy apparatus. .
率が３０Ｗ／ｍ・Ｋ以上でかつ耐熱性が６００℃以上の
ものであることを特徴とする請求項１ないし請求項３の
いずれか１項に記載した分子線エピタキシー用分子線源
シャッタ。4. The material according to claim 1, wherein the material of the molecular beam source shutter has a thermal conductivity of 30 W / m · K or more and a heat resistance of 600 ° C. or more. 3. The molecular beam source shutter for molecular beam epitaxy according to claim 1.
法で作製されたＢＮ、ＡｌＮ、ＳｉＣまたはＳｉ3 Ｎ4
であることを特徴とする請求項１ないし請求項４のいず
れか１項に記載した分子線エピタキシー用分子線源シャ
ッタ。5. The molecular beam source shutter is made of a CVD material.
, AlN, SiC or Si 3 N 4 prepared by the method
The molecular beam source shutter for molecular beam epitaxy according to any one of claims 1 to 4, wherein:
子線源シャッタを用いたことを特徴とする分子線エピタ
キシー装置。6. A molecular beam epitaxy apparatus using the molecular beam source shutter according to claim 1.
１項に記載の分子線エピタキシー用分子線源シャッタを
用いた装置により、エピタキシャル膜を成長させること
を特徴とするエピタキシャル膜の製造方法。7. A method of manufacturing an epitaxial film, comprising: growing an epitaxial film by using an apparatus using the molecular beam source shutter for molecular beam epitaxy according to any one of claims 1 to 5. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13773898A JP4071355B2 (en) | 1998-05-01 | 1998-05-01 | Molecular beam source shutter for molecular beam epitaxy, molecular beam epitaxy apparatus, and epitaxial film manufacturing method using the molecular beam source shutter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13773898A JP4071355B2 (en) | 1998-05-01 | 1998-05-01 | Molecular beam source shutter for molecular beam epitaxy, molecular beam epitaxy apparatus, and epitaxial film manufacturing method using the molecular beam source shutter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11314995A true JPH11314995A (en) | 1999-11-16 |
| JP4071355B2 JP4071355B2 (en) | 2008-04-02 |
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ID=15205684
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|---|---|---|---|
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|---|---|
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3480343A1 (en) * | 2017-11-01 | 2019-05-08 | DCA Cantor Oy | Molecular beam epitaxy system and method for reducing excess flux in a molecular beam epitaxy system |
| CN113463189A (en) * | 2021-06-21 | 2021-10-01 | 湖南烁科晶磊半导体科技有限公司 | Double-shutter molecular beam epitaxy source furnace system and molecular beam epitaxy equipment |
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|---|---|---|---|---|
| CN102684418B (en) * | 2012-05-24 | 2014-03-05 | 永济新时速电机电器有限责任公司 | Full-automatic numerical-control bundling machine for wind power rotor windings |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3480343A1 (en) * | 2017-11-01 | 2019-05-08 | DCA Cantor Oy | Molecular beam epitaxy system and method for reducing excess flux in a molecular beam epitaxy system |
| WO2019086570A1 (en) * | 2017-11-01 | 2019-05-09 | Dca Cantor Oy | Molecular beam epitaxy system and method for reducing excess flux in a molecular beam epitaxy system |
| CN113463189A (en) * | 2021-06-21 | 2021-10-01 | 湖南烁科晶磊半导体科技有限公司 | Double-shutter molecular beam epitaxy source furnace system and molecular beam epitaxy equipment |
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