JPH11307808A - Photocoupler device - Google Patents
Photocoupler deviceInfo
- Publication number
- JPH11307808A JPH11307808A JP10817898A JP10817898A JPH11307808A JP H11307808 A JPH11307808 A JP H11307808A JP 10817898 A JP10817898 A JP 10817898A JP 10817898 A JP10817898 A JP 10817898A JP H11307808 A JPH11307808 A JP H11307808A
- Authority
- JP
- Japan
- Prior art keywords
- light
- receiving element
- light receiving
- light emitting
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、発光素子と受光素
子とを１パッケージ化したホトカプラ装置に関するもの
であり、特に装置の薄形化に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photocoupler device in which a light emitting element and a light receiving element are packaged in one package, and more particularly to a thin device.
【０００２】[0002]
【従来の技術】発光素子と受光素子とを組み合わせ、電
気信号を光信号に置き換えて信号の伝達を行うホトカプ
ラ装置は、その間で電気的な回路網を遮断できることか
ら、電源電位が大きく異なる回路網間で信号伝達を行う
場合などに多く利用されている。2. Description of the Related Art A photocoupler device in which a light emitting element and a light receiving element are combined and an electric signal is replaced with an optical signal to transmit a signal is used. It is often used for transmitting signals between devices.
【０００３】図４は、従来のホトカプラ装置を示す断面
図であり、リードフレームの各アイランド１、２に発光
素子３と受光素子４とを両者の表面が相対向するように
固着し、全体を透光性の樹脂５でモールドしたものであ
る。リード６に印加された電気信号を発光素子３で光信
号７に変換し、受光素子４が光信号７を受けて再度電気
信号に変換する。この場合、光信号７が直進性を有する
ので発光素子３の発光面と受光素子４の受光面とを相対
向するように配置しなければならない。FIG. 4 is a cross-sectional view showing a conventional photocoupler device. A light emitting element 3 and a light receiving element 4 are fixed to each of the islands 1 and 2 of a lead frame so that the surfaces of the light emitting element 3 and the light receiving element 4 are opposed to each other. It is molded with a translucent resin 5. The electric signal applied to the lead 6 is converted by the light emitting element 3 into an optical signal 7, and the light receiving element 4 receives the optical signal 7 and converts it again into an electric signal. In this case, since the optical signal 7 has a straight traveling property, the light emitting surface of the light emitting element 3 and the light receiving surface of the light receiving element 4 must be arranged to face each other.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、発光面
と受光面とを相対向させることは、各素子チップの板厚
の分やボンディングワイヤ８の領域を確保するなどの理
由により、パッケージ全体の高さ（図面ｔ）を薄くする
ことが困難である欠点があった。However, making the light emitting surface and the light receiving surface face each other requires the height of the entire package due to the thickness of each element chip and the area for the bonding wires 8. However, there is a disadvantage that it is difficult to reduce the thickness (drawing t).
【０００５】[0005]
【課題を解決するための手段】本発明は前述の課題に鑑
みて成され、発光素子と受光素子とを１つのパッケージ
内に封止し、前記発光素子から発せられた光信号を前記
受光素子で受光して電気信号に変換するホトカプラ装置
において、前記光信号の経路が前記パッケージの樹脂内
部で折り曲げられて前記受光素子に到達することを特徴
とするものである。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and has a light-emitting element and a light-receiving element sealed in one package, and an optical signal emitted from the light-emitting element is transmitted to the light-receiving element. Wherein the path of the optical signal is bent inside the resin of the package and reaches the light receiving element.
【０００６】[0006]
【発明の実施の形態】以下、本発明の実施の形態につい
て、図１を参照しながら説明する。尚、図１（Ａ）は図
１（Ｂ）のＡＡ線断面図を示している。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG. FIG. 1A is a sectional view taken along the line AA in FIG. 1B.
【０００７】同図において、１０、１１はリードフレー
ムのアイランドを示している。アイランド１０の表面に
は半導体チップとして構成した受光素子１２が半田や銀
ペースト等の接着剤１３で固定され、前記半導体チップ
表面に形成したボンディングパッドとリード１４とがボ
ンディングワイヤ１５で電気的に接続されている。アイ
ランド１１の表面には半導体チップで構成した発光素子
１６が同じく接着剤１３で固定され、前記半導体チップ
１６の表面に形成したボンディングパッドとリード１４
とがボンディングワイヤ１５で電気的に接続されてい
る。発光素子１６は、例えばレーザダイオード素子から
なり、受光素子１２は、例えばＰＮ接合を用いたフォト
センサであり駆動回路が一体のものでよい。受光素子１
２のホトダイオード部分を符号１７で示した。In FIG. 1, reference numerals 10 and 11 denote islands of a lead frame. A light receiving element 12 configured as a semiconductor chip is fixed on the surface of the island 10 with an adhesive 13 such as solder or silver paste, and a bonding pad formed on the surface of the semiconductor chip and a lead 14 are electrically connected by a bonding wire 15. Have been. A light emitting element 16 composed of a semiconductor chip is also fixed on the surface of the island 11 with an adhesive 13, and bonding pads and leads 14 formed on the surface of the semiconductor chip 16 are formed.
Are electrically connected by a bonding wire 15. The light-emitting element 16 is, for example, a laser diode element, and the light-receiving element 12 is, for example, a photosensor using a PN junction, and may have an integrated drive circuit. Light receiving element 1
Reference numeral 17 denotes a photodiode portion of No. 2.
【０００８】そして、リード１４の先端を含めて、発光
素子１６と受光素子１２を、赤外光あるいは紫外光に対
して透明な樹脂１８でトランスファーモールドした。ア
イランド１０、１１はその裏面が樹脂１７の表面と同一
平面を構成するように露出させる。また、受光素子１２
のチップ表面が上を向くように封止するのに対して、発
光素子１６は受光素子１２から水平方向にずれた箇所に
配置し、且つ、チップ表面が下を向くように封止した。
リード１４の先端部は、この素子を表面実装用途に使用
できるように、Ｚ字型に折り曲げてある。加えて、パッ
ケージ外形を構成する樹脂１８の一部に、反射面１９を
持つ溝２０を形成し、該溝２０を受光素子１２の上方に
設置した。Then, the light emitting element 16 and the light receiving element 12 including the tip of the lead 14 were transfer-molded with a resin 18 transparent to infrared light or ultraviolet light. The back surfaces of the islands 10 and 11 are exposed so as to form the same plane as the front surface of the resin 17. The light receiving element 12
In contrast, the light emitting element 16 was disposed at a position shifted in the horizontal direction from the light receiving element 12, and the chip surface was sealed such that the chip surface faced downward.
The tip of the lead 14 is bent in a Z-shape so that the element can be used for surface mounting. In addition, a groove 20 having a reflection surface 19 was formed in a part of the resin 18 constituting the package outer shape, and the groove 20 was provided above the light receiving element 12.
【０００９】本発明の特徴は、反射面１９にある。この
反射面１９は樹脂１８でトランスファーモールドする際
に使用する金型に溝２０に該当する突起を設けるか、あ
るいはトランスファーモールドした後に切削・研磨など
の手段で樹脂１８を削ることによって得ることができ
る。溝２０の反射面１９は、受光素子１２のチップ水平
面に対して略４５度の傾斜角をもち、その反射面１９は
平面視で（図１（Ｂ）の様に観測して）受光素子１２の
ホトダイオード部分１７の略全体を覆っていることが好
ましい。A feature of the present invention resides in the reflection surface 19. The reflection surface 19 can be obtained by providing a projection corresponding to the groove 20 in a mold used for transfer molding with the resin 18, or by shaping the resin 18 by means such as cutting and polishing after transfer molding. . The reflecting surface 19 of the groove 20 has an inclination angle of approximately 45 degrees with respect to the horizontal plane of the chip of the light receiving element 12, and the reflecting surface 19 is viewed in a plan view (observed as shown in FIG. 1B). It is preferable that almost the entire photodiode portion 17 is covered.
【００１０】本実施例で発光素子１６として用いた半導
体レーザは、リード１４に印加された電気信号に応じて
光信号２１を発光する素子であって、その光信号２１
は、大部分が半導体チップの側壁からチップの表面に対
して水平方向に出射される素子である。出射された光信
号２１は、樹脂１８内部を通過し、反射面１９で反射す
る。反射した光信号１９は受光素子１２のホトダイオー
ド部１７に入射され、入射された光信号２１に応じた電
気信号に再度変換される。The semiconductor laser used as the light emitting element 16 in this embodiment is an element that emits an optical signal 21 in response to an electric signal applied to the lead 14, and the optical signal 21
Is an element which is mostly emitted from the side wall of the semiconductor chip in the horizontal direction to the surface of the chip. The emitted optical signal 21 passes through the inside of the resin 18 and is reflected by the reflection surface 19. The reflected optical signal 19 is incident on the photodiode 17 of the light receiving element 12 and is again converted into an electric signal corresponding to the incident optical signal 21.
【００１１】このように、光信号２１の伝達経路を樹脂
１８の内部で屈折させたことにより、受光素子１２と発
光素子１６とを対面させる必要が無くなった。従って、
受光素子１２と発光素子１６の位置関係を水平方向にず
らし、両者のチップ間の距離を狭めることによって、パ
ッケージ外形寸法の高さｔを低く抑えることが可能にな
った。As described above, since the transmission path of the optical signal 21 is refracted inside the resin 18, it is not necessary to make the light receiving element 12 and the light emitting element 16 face each other. Therefore,
By shifting the positional relationship between the light receiving element 12 and the light emitting element 16 in the horizontal direction and narrowing the distance between the two chips, the height t of the package outer dimensions can be reduced.
【００１２】例えば、リードフレームはＣｕより成り、
厚さは、約０．１２５ｍｍで、半導体チップの厚みは、
例えば２５０〜３００μｍ程度である。また樹脂１８
は、透明なエポキシ材料で、全体の厚みｔは約１ｍｍ〜
１．５ｍｍである。当然チップの厚みが薄くなれば、更
に薄くできる事は言うまでもない。溝２０は、半導体チ
ップを露出することなく、例えば厚みの半分程度、ここ
では７５０μｍの深さで形成した。アイランド１０、１
１の裏面を露出させることで、更にパッケージの薄形化
が可能になる。For example, the lead frame is made of Cu,
The thickness is about 0.125mm, and the thickness of the semiconductor chip is
For example, it is about 250 to 300 μm. Resin 18
Is a transparent epoxy material, and the total thickness t is about 1 mm
1.5 mm. It goes without saying that if the thickness of the chip is reduced, it can be further reduced. The groove 20 is formed at a depth of, for example, about half the thickness, here 750 μm, without exposing the semiconductor chip. Island 10, 1
By exposing the back surface of the package 1, the package can be further thinned.
【００１３】ところで、反射面１９は、その界面におい
て外気と透明樹脂１８との屈折率の違いにより、反射面
１９を構成する。しかし全ての光が反射されるものでは
ないので、反射効率を向上するために、反射面１９に金
属被膜を形成してミラー面とするのも良い。Incidentally, the reflection surface 19 forms the reflection surface 19 at the interface due to the difference in the refractive index between the outside air and the transparent resin 18. However, since not all light is reflected, a metal film may be formed on the reflection surface 19 to form a mirror surface in order to improve the reflection efficiency.
【００１４】この被膜方法としては、半導体技術で使用
される蒸着、スパッタ成膜が考えられ、またその他に
は、メッキが考えられる。ここで注意を要する所は、リ
ード１４間の短絡である。前者の二つの被膜方法では、
選択マスクを必要とする。またメッキの内、例えば無電
解メッキで、溶液の中に全体をディップする場合は、導
出する部分のリード１４の導出箇所に樹脂等のマスクを
付けた後にメッキし、このマスクを取り除けばよい。ま
たディップ以外では、この溶液を溝の部分に滴下してメ
ッキさせても良い。金属材料としては、金、Ａｌ、ニッ
ケル等が考えられる。As the coating method, vapor deposition and sputter deposition used in semiconductor technology can be considered, and in addition, plating can be considered. A point to be noted here is a short circuit between the leads 14. In the former two coating methods,
Requires a selection mask. When the whole is dipped in a solution by, for example, electroless plating, plating is performed after attaching a mask of resin or the like to a lead-out portion of the lead 14 in a lead-out portion, and removing the mask. In addition to the dip, this solution may be dropped on the groove to perform plating. As the metal material, gold, Al, nickel and the like can be considered.
【００１５】また、反射効率を向上するために、溝２０
内部を遮光性の樹脂などで埋設してもよい。この場合
は、溝２０を形成後にポッティングなどの手法で遮光樹
脂を滴下すればよい。In order to improve the reflection efficiency, the grooves 20
The inside may be embedded with a light-shielding resin or the like. In this case, the light shielding resin may be dropped by a method such as potting after the formation of the groove 20.
【００１６】図２（Ａ）に第２の実施の形態を示した。
発光素子１６としてＬＥＤ素子を用いた例である。ＬＥ
Ｄ素子はチップ表面から大略垂直方向に光信号２１を出
射するので、発光素子１６のチップ下方にも溝２２を形
成し、反射面２３によって光信号２１を反射し、反射面
１９で再度反射させて受光素子１２に導入する形態を採
用した。FIG. 2A shows a second embodiment.
This is an example in which an LED element is used as the light emitting element 16. LE
Since the D element emits the optical signal 21 in a substantially vertical direction from the chip surface, a groove 22 is also formed below the chip of the light emitting element 16 so that the optical signal 21 is reflected by the reflecting surface 23 and is reflected again by the reflecting surface 19. In this case, the light-receiving element 12 is introduced into the light-receiving element 12.
【００１７】図２（Ｂ）に第３の実施の形態を示した。
発光素子１６としてレーザダイオードを用い、受光素子
１２と発光素子１６とを同じ向きに封止したものであ
る。この場合は、アイランド１０に対してアイランド１
１の高さを少し高くしておき、発光素子１６からの光信
号２１が反射面１９に照射されるような形態を採用し
た。FIG. 2B shows a third embodiment.
A laser diode is used as the light emitting element 16, and the light receiving element 12 and the light emitting element 16 are sealed in the same direction. In this case, the island 1 is
The height of 1 was slightly increased, and a mode was adopted in which the light signal 21 from the light emitting element 16 was irradiated on the reflection surface 19.
【００１８】図２（Ｃ）に第４の実施の形態を示した。
発光素子１６としてＬＥＤ素子を用い、受光素子１２と
発光素子１６とを同じ向きに封止したものである。共に
アイランド１０、１１の裏面が露出するように封止し、
発光素子１６の上方にも反射面２３を持つ溝２２を形成
したものである。図２（Ｂ）、図２（Ｃ）の実施形態の
法が、チップの向きが同じであるので樹脂１８の外形寸
法の高さｔを低く抑えることができる。FIG. 2C shows a fourth embodiment.
An LED element is used as the light emitting element 16, and the light receiving element 12 and the light emitting element 16 are sealed in the same direction. Both are sealed so that the back surfaces of the islands 10 and 11 are exposed,
A groove 22 having a reflection surface 23 is also formed above the light emitting element 16. 2B and FIG. 2C, the height t of the outer dimension of the resin 18 can be reduced because the chip orientation is the same.
【００１９】図３に第５の実施の形態を示した。これは
ホトダイオード部１７の受光領域の形状に関する。本発
明では、溝２０の反射面１９がホトダイオード部１７の
上部を覆うようにすること、及び反射面１９が約４５度
の角度で傾斜していることが必要となる。そのため、図
３（Ａ）のホトダイオード部１７ｂの様に、光信号２１
の伝達経路に対して受光領域が縦長の形状、つまり幅Ｗ
１より長さＬ１が長い形状であると、これに対応させる
為には溝２０ｂ（図３（Ｂ））の深さＨ１が必要にな
る。これに対して、ホトダイオード部１７ａの様に、光
信号２１の伝達経路に対して横長の形状、つまり幅Ｗ２
に対して長さＬ２が十分に短い形状であれば、これに対
応する溝２０ａの深さＨ２も小さくてすむ。溝２０の深
さが浅くすめば、パッケージ外形の高さｔもおのずと低
く抑えることができる。そこで、受光素子１２を形成す
る半導体チップの幅全体を用いてホトダイオード部１７
を配置し、縦方向の長さＬ２を極力短く設計すれば、パ
ッケージの薄形化に寄与することができる。FIG. 3 shows a fifth embodiment. This relates to the shape of the light receiving area of the photodiode section 17. In the present invention, it is necessary that the reflecting surface 19 of the groove 20 covers the upper part of the photodiode portion 17 and that the reflecting surface 19 is inclined at an angle of about 45 degrees. Therefore, like the photodiode section 17b in FIG.
The light receiving area is vertically elongated with respect to the transmission path of
If the length L1 is longer than 1, the depth H1 of the groove 20b (FIG. 3B) is required to correspond to this. On the other hand, like the photodiode portion 17a, a shape that is horizontally long with respect to the transmission path of the optical signal 21, that is, the width W2
If the length L2 is sufficiently short, the depth H2 of the corresponding groove 20a may be small. If the depth of the groove 20 is small, the height t of the package outer shape can naturally be kept low. Therefore, the photodiode portion 17 is formed by using the entire width of the semiconductor chip forming the light receiving element 12.
If the length L2 in the vertical direction is designed to be as short as possible, it is possible to contribute to the reduction in the thickness of the package.
【００２０】以上の各実施の形態において、リード１４
先端部の曲げる方向は上下どちらでも可能である。受光
素子１２用のアイランド１０が金属で遮光性を持つこと
から、実装したときに受光素子１２のチップが下を向く
（プリント基板側に向く）ように折り曲げておけば、外
部からの余計な光の入射による誤動作を防止することが
できる。また、樹脂１８を整形した後に、その全表面を
遮光性の樹脂で再度封止する事で不要な光の入射を完全
に防止することができる。In each of the above embodiments, the lead 14
The bending direction of the tip can be either up or down. Since the island 10 for the light receiving element 12 is made of metal and has a light-shielding property, if the chip of the light receiving element 12 is bent so as to face downward (toward the printed circuit board side) when mounted, unnecessary light from the outside is obtained. Can be prevented from malfunctioning due to the incidence of light. After the resin 18 is shaped, the entire surface is sealed again with a light-shielding resin, so that unnecessary light can be completely prevented from entering.
【００２１】[0021]
【発明の効果】本発明によれば、反射面１９を設けるこ
とにより光信号２１を反射させて受光素子１２に到達さ
せる構成としたので、パッケージ寸法の高さｔを低く抑
えたホトカプラ装置を得ることができる利点を有する。
従って、電子機器に組み込んだ際のへ矩形かに寄与する
ことができる利点を有する。According to the present invention, since the optical signal 21 is reflected by the provision of the reflection surface 19 to reach the light receiving element 12, a photocoupler device in which the height t of the package dimension is kept low can be obtained. Can have the advantages.
Therefore, there is an advantage that it can contribute to a rectangular shape when incorporated in an electronic device.
【図面の簡単な説明】[Brief description of the drawings]
【図１】本発明を説明する（Ａ）断面図、（Ｂ）平面図
である。1A and 1B are a cross-sectional view and a plan view illustrating the present invention.
【図２】本発明の他の実施形態を示す断面図である。FIG. 2 is a cross-sectional view showing another embodiment of the present invention.
【図３】本発明の他の実施形態を示す断面図である。FIG. 3 is a cross-sectional view showing another embodiment of the present invention.
【図４】従来のホトカプラ装置を示す断面図である。FIG. 4 is a sectional view showing a conventional photocoupler device.
フロントページの続き (72)発明者 石川 勉 大阪府守口市京阪本通２丁目５番５号 三 洋電機株式会社内 (72)発明者 関口 智 大阪府守口市京阪本通２丁目５番５号 三 洋電機株式会社内 (72)発明者 新井 政至 大阪府守口市京阪本通２丁目５番５号 三 洋電機株式会社内 (72)発明者 小堀 浩 大阪府守口市京阪本通２丁目５番５号 三 洋電機株式会社内Continued on the front page (72) Inventor Tsutomu Ishikawa 2-5-1-5 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (72) Inventor Satoshi Sekiguchi 2-5-2-5 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (72) Inventor Masatoshi Arai 2-5-5 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (72) Inventor Hiroshi Kobori 2-5-2, Keihanhondori, Moriguchi-shi, Osaka No. 5 Sanyo Electric Co., Ltd.
Claims (6)
ジ内に封止し、前記発光素子から発せられた光信号を前
記受光素子で受光して電気信号に変換するホトカプラ装
置において、 前記光信号の経路が前記パッケージの樹脂内部で折り曲
げられて前記受光素子に到達することを特徴とするホト
カプラ装置。1. A photocoupler device in which a light emitting element and a light receiving element are sealed in one package and an optical signal emitted from the light emitting element is received by the light receiving element and converted into an electric signal. Wherein the path is bent inside the resin of the package and reaches the light receiving element.
子の上方に位置する箇所に、前記光信号の経路に対して
傾斜した反射面を持つ溝を形成し、前記反射面で前記光
信号の経路が屈曲することを特徴とする請求項１記載の
ホトカプラ装置。2. A groove having a reflecting surface inclined with respect to the optical signal path is formed at a position of the package above the light emitting or light receiving element, and the optical signal path is formed on the reflecting surface. The photocoupler device according to claim 1, wherein the photocoupler device is bent.
フレームのアイランド上に固着されており、前記アイラ
ンドの裏面が前記パッケージの表面に露出していること
を特徴とする請求項１記載のホトカプラ装置。3. The photocoupler according to claim 1, wherein said light emitting element and said light receiving element are fixed on an island of a lead frame, and a back surface of said island is exposed on a surface of said package. apparatus.
外線または赤外線に対して透明な樹脂で被覆されてお
り、前記溝の表面を遮光性の材料で被覆したことを特徴
とする請求項２記載のホトカプラ装置。4. The light-emitting element and the light-receiving element are covered with a resin transparent to ultraviolet rays or infrared rays, and the surface of the groove is covered with a light-shielding material. The photocoupler device according to the above.
外線または赤外線に対して透明な樹脂で被覆されてお
り、前記溝を遮光性の樹脂で埋設したことを特徴とする
請求項２記載のホトカプラ装置。5. The light emitting device according to claim 2, wherein the periphery of the light emitting element and the light receiving element are covered with a resin transparent to ultraviolet rays or infrared rays, and the groove is embedded with a light shielding resin. Photocoupler device.
前記受光素子の受光部が横長の形状を持つことを特徴と
する請求項１記載のホトカプラ装置。6. A direction of a transmission path of the optical signal,
2. The photocoupler device according to claim 1, wherein the light receiving portion of the light receiving element has a horizontally long shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10817898A JP4301588B2 (en) | 1998-04-17 | 1998-04-17 | Photocoupler device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10817898A JP4301588B2 (en) | 1998-04-17 | 1998-04-17 | Photocoupler device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11307808A true JPH11307808A (en) | 1999-11-05 |
| JP4301588B2 JP4301588B2 (en) | 2009-07-22 |
Family
ID=14477981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10817898A Expired - Fee Related JP4301588B2 (en) | 1998-04-17 | 1998-04-17 | Photocoupler device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4301588B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002093642A2 (en) * | 2001-05-11 | 2002-11-21 | Melexis Nv | Integrated sensor packaging and methods of making the same |
| US6762077B2 (en) | 2001-05-11 | 2004-07-13 | Melexis Nv | Integrated sensor packages and methods of making the same |
| WO2018105358A1 (en) * | 2016-12-09 | 2018-06-14 | 株式会社村田製作所 | Photocoupler |
-
1998
- 1998-04-17 JP JP10817898A patent/JP4301588B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002093642A2 (en) * | 2001-05-11 | 2002-11-21 | Melexis Nv | Integrated sensor packaging and methods of making the same |
| WO2002093642A3 (en) * | 2001-05-11 | 2003-03-13 | Melexis Nv | Integrated sensor packaging and methods of making the same |
| US6762077B2 (en) | 2001-05-11 | 2004-07-13 | Melexis Nv | Integrated sensor packages and methods of making the same |
| US6917089B2 (en) | 2001-05-11 | 2005-07-12 | Melexis Nv | Integrated sensor packages and methods of making the same |
| US7060216B2 (en) | 2001-05-11 | 2006-06-13 | Melexis, Nv | Tire pressure sensors and methods of making the same |
| WO2018105358A1 (en) * | 2016-12-09 | 2018-06-14 | 株式会社村田製作所 | Photocoupler |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4301588B2 (en) | 2009-07-22 |
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