JPH11307694A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a semiconductor device of highly reliable structure by a method, wherein heat generated in a semiconductor chip operation is dissipated through both its rear and front surface. SOLUTION: A semiconductor device is small and thin, wherein heat dissipating holes 14 formed of heat conductor are provided in a low-elastic material 9 formed on a semiconductor chip 7, and an outer connection terminal is formed on the holes 14 respectively. Through this setup, heat generated in operation of the semiconductor chip 7 can be dissipated toward a printed board which mounted with a semiconductor device through the outer connection terminals via the heat dissipating holes 14. Through this constitution, heat released from the semiconductor chip 7 in operation can be dissipated through its rear and front surface, so that a semiconductor device of high heat dissipating properties can be provided. Heat dissipating holes can be formed at the same time when a low-elastic material is formed, so that the holes can be formed easily and effectively.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device which protects an integrated circuit portion of a semiconductor, secures an electrical connection between an external device and a semiconductor chip, and enables high-density mounting and a method of manufacturing the same. It is about. The semiconductor device of the present invention facilitates miniaturization of information communication equipment, office electronic equipment, and the like, and facilitates wiring within the semiconductor device,
This is to improve wiring adhesion reliability.

[0002]

2. Description of the Related Art In recent years, a semiconductor device and a method for manufacturing the same have been required to have a smaller size, a higher density, and a higher speed as electronic devices have become smaller and more sophisticated. Development of LOC (lead-on-chip) or SON (small outline non-lead), or μB using TAB tape
Packages such as GA (micro ball grid array) have been developed.

Hereinafter, a conventional semiconductor device called μBGA will be described with reference to the drawings.

FIG. 7 is a sectional view showing a conventional semiconductor device called μBGA. In FIG. 7, 1 is a semiconductor chip, 2 is a flexible sheet-like element, 3 is a flexible low elastic modulus material, 4 is a partial lead, 5 is an electrode terminal, and 6 is a land on the surface of the flexible sheet-like element 2. .

As shown in the figure, a conventional semiconductor device called μBGA has a structure in which a flexible sheet-like element 2 is joined to a semiconductor chip 1 via a low elastic modulus material 3.
The electrode terminals 5 of the semiconductor chip 1 and the lands 6 on the surface of the flexible sheet-like element 2 are electrically connected by partial leads 4.

[0006]

However, in the above-described conventional semiconductor device, the back surface of the semiconductor chip 1 is exposed, and the structure is such that heat generated when the semiconductor chip 1 operates can be easily radiated. On the surface (circuit side) of the semiconductor chip 1, a flexible sheet-like element 2 and a flexible low elastic modulus material 3 are formed. For this reason, the structure is difficult to radiate heat because the heat generating portion is covered.

The present invention solves the above-mentioned conventional problems, in which a heat dissipation hole made of a conductor is formed in a low elastic modulus material formed on a semiconductor chip, and an external connection electrode is formed on the heat dissipation hole. Form. As a result, heat generated when the semiconductor chip operates is radiated to the outside of the semiconductor element through the radiating hole formed of the conductor. According to the above method, the present invention is capable of dissipating heat during operation of a semiconductor chip to both the front and back surfaces of the semiconductor chip, and has an object to obtain a highly reliable structure as a semiconductor device.

[0008]

In order to achieve this object, a semiconductor device according to the present invention comprises a semiconductor chip having an electrode portion arranged on a surface thereof, and an electrode portion arranged on a surface of the semiconductor chip being exposed. An insulating low-modulus material layer formed on the surface of the semiconductor chip; a metal wiring layer connected to the electrode portion and extending in a pattern on the low-modulus material layer; A solder resist formed on the low-modulus material layer, and an external electrode terminal provided on an open metal wiring layer where the solder resist is not formed, except for a part of the low-modulus material; A semiconductor device comprising: a layer having a hole reaching the surface of the semiconductor chip, wherein the hole provided in the low-modulus material layer is provided in a region of the low-modulus material layer which is not wired by a metal wiring layer. Semiconductor device That. In addition, the semiconductor device has a groove in a low elastic modulus material layer instead of a hole.

A semiconductor chip having an electrode portion arranged on a surface thereof; and an insulating low elastic modulus material layer formed on the semiconductor chip surface exposing the electrode portion arranged on the surface of the semiconductor chip. A metal wiring layer connected to the electrode portion and extending in a pattern on the low elastic modulus material layer;
A solder resist formed excluding a part of the metal wiring layer formed on the low elastic modulus material layer, and an external electrode terminal provided on the open metal wiring layer without the solder resist being formed. A semiconductor device having a hole in the low elastic modulus material layer below the external connection terminal. Further, the semiconductor device has a hole connected to the external connection terminal and the surface of the semiconductor chip. Also,
Materials in which the holes conduct heat efficiently, such as Au, Ag, C
This is a semiconductor device filled with a metal containing u, Ti, Cr, W, Pd, Sn, Pb, and Ni as main components or an alloy thereof. Further, the semiconductor device has holes filled with a material mainly containing AlN, C, and alumina. The holes are made of Au, Ag, Cu, Ti, Cr, W, Pd, Sn, P
This is a semiconductor device in which a conductive layer is formed on the inner wall of the hole with a metal or an alloy thereof containing b and Ni as main components.

In the method of manufacturing a semiconductor device,
Forming a low-elasticity material from a photosensitive insulating material on the semiconductor chip, patterning the hole and opening the electrode portion on the surface of the semiconductor chip at a desired position to expose and expose a metal or A step of filling a material made of non-metal, connecting to the electrode portion of the semiconductor chip, and passing a metal wiring layer on the low elastic modulus material on the semiconductor chip surface in a desired pattern after passing over the semiconductor chip surface. Routing step, forming a photosensitive solder resist on the low elastic modulus material, and protecting a metal wiring layer other than a portion serving as a land portion to which an external electrode terminal is joined; and disposing the external electrode terminal from the metal wiring layer. Placed on the land,
This is a method for manufacturing a semiconductor device, comprising a step of fusion bonding.

According to the above configuration, since a part of the surface of the semiconductor chip is exposed, heat is easily transmitted to the outside through the hole, and the heat radiation is improved as compared with the case where the semiconductor chip is covered with the resin. With this structure, a semiconductor device with further improved heat dissipation can be formed.

Also, in the method of forming the heat dissipation hole, since the heat dissipation hole can be formed at the same time when the insulating layer (low elastic modulus material) is formed, the process is easy and advantageous. Also, when a semiconductor device is mounted on a printed circuit board or the like by forming a heat dissipation hole below the external connection terminal, heat generated from the semiconductor chip is transmitted to the printed circuit board through the external connection terminal. Is promoted.

Further, by filling or forming the holes with a material such as a metal or a non-metal which promotes the conduction of heat from the semiconductor chip, the heat radiation can be further improved as compared with a structure in which holes are simply formed.

Further, since the semiconductor chip and the heat dissipation hole are electrically insulated, there is no problem even if the heat dissipation hole is filled with a conductive material.

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a view showing a semiconductor device according to this embodiment. FIG. 1A is a plan view of the semiconductor device according to this embodiment as viewed from an external connection terminal side, and FIG. It is sectional drawing of -A1 location.

As shown in FIGS. 1A and 1B, in the semiconductor device of the present embodiment, the electrodes 8 arranged at the peripheral portion of the surface of the semiconductor chip 7 are opened, and the insulating property is low. The elastic material 9 is coated. And connected to the electrode 8,
The extended metal wiring layer 10 is routed on the low elastic modulus material 9 after passing through the surface of the semiconductor chip 7. A solder resist 11 is formed in a region other than the metal wiring layer 10 formed on the low elastic modulus material 9 and the heat dissipation hole, and a metal ball 12 is bonded on the opened metal wiring layer 10. is there. Here, the metal ball 12 is the metal wiring layer 1
The lands 13 are joined on the lands 13 formed by the “0”. In the semiconductor device of the present embodiment, a through-hole-shaped heat radiation hole 14 is formed as a heat radiation means in a portion where no wiring is provided and a portion covered with the insulating low elastic modulus material 9. Is what it is. This heat dissipation hole 1
4 is formed so as to reach the surface of the semiconductor chip 7, and by opening the heat radiation hole 14 so as to reach the surface of the semiconductor chip 7, heat is directly radiated from the semiconductor chip 7 to the outside and heat conduction is performed. The property is improved. Note that a passivation film is formed on the surface of the semiconductor chip 7 other than the electrodes 8. In the present embodiment, an example is shown in which a heat-dissipating hole 14 is formed in a portion of the semiconductor chip 7 where no wiring is provided and where the insulating low-modulus material 9 is coated. A similar effect may be obtained even if a groove is used instead of the groove.

As described above, the semiconductor device of this embodiment is
By forming the through-hole heat radiation holes 14, a part of the surface of the semiconductor chip 7 is exposed, so that the heat generated in the semiconductor chip 7 can be easily radiated to the outside of the semiconductor device. Since the heat-dissipating holes 14 are formed in portions where no wiring is provided, a large number of holes or grooves can be formed, and the more holes or grooves are more advantageous in terms of heat dissipation.

Next, a second embodiment of the present invention will be described with reference to the drawings. FIG. 2 is a cross-sectional view showing a semiconductor device according to a second embodiment of the present invention in which a material having high thermal conductivity is filled in a heat dissipation hole as shown in FIG. FIG. 3 is a cross-sectional view showing the semiconductor device when the heat dissipation hole is filled with a wiring forming conductor. FIG. 4 is a cross-sectional view showing a semiconductor device in which the heat dissipation hole is filled with an external connection terminal material, in which a metal via integrated with the external connection terminal is formed.

As shown in FIGS. 2, 3 and 4, in the semiconductor device of the present embodiment, the electrodes 8 arranged on the periphery of the surface of the semiconductor chip 7 are opened. The metal wiring layer 10 connected to and extended from the electrode 8 is routed on the low elastic modulus material 9 after passing through the surface of the semiconductor chip 7. Further, a heat radiation hole 1 filled with a material having a high heat radiation property at a position where an external connection terminal (metal ball 12) is formed.
4 are formed. A solder resist 11 is formed in a region other than the land 13 where the metal ball 12 is to be mounted in a later step, and the metal ball 12 is bonded to the open land 13. Note that a passivation film is formed on the surface of the semiconductor chip 7 other than the electrodes 8.

That is, the semiconductor chip 7 having the electrodes 8 arranged on the surface and the electrode 8 arranged on the surface of the semiconductor chip 7
Are exposed, and an insulating low elastic modulus material 9 formed on the surface of the semiconductor chip 7 and the low elastic modulus material 9 connected to the electrode 8.
A metal wiring layer 10 patterned and extended thereon, a solder resist 11 formed except a part of the metal wiring layer 10 formed on the low elastic modulus material 9, and a solder resist 11 are formed. A metal ball 12 as an external electrode terminal provided on an open metal wiring layer 10, wherein the metal ball 1 as an external connection terminal is provided.
2 has a heat radiation hole 14 in the low elastic modulus material 9 at the lower portion, and has a structure in which the heat radiation hole 14 is filled with a material having high heat radiation.

Further, the semiconductor chip 7 having the electrodes 8 arranged on the surface thereof and the insulating low elastic modulus material 9 formed on the surface of the semiconductor chip 7 by exposing the electrodes 8 arranged on the surface of the semiconductor chip 7 are exposed. And a metal wiring layer 10 connected to the electrode 8 and extending in a pattern on the low elastic material 9, and formed except for a part of the metal wiring layer 10 formed on the low elastic material 9. And a metal ball 12 which is an external electrode terminal provided on the open metal wiring layer 10 in which the solder resist 11 is not formed and which has an external connection terminal (metal ball 12). Has a metal via with an external connection terminal integrated therewith.

In this embodiment, the heat radiation holes 14 are used.
Are gold (Au), silver (Ag),
A hole made of a metal containing copper (Cu), titanium (Ti), chromium (Cr), tungsten (W), palladium (Pd), tin (Sn), lead (Pb), nickel (Ni) as a main component, or an alloy thereof. A conductive layer may be formed on the inner wall of the device.

As described above, the semiconductor device of this embodiment is
A small and thin semiconductor device that has a heat dissipation hole with good thermal conductivity in a low elastic modulus material formed on the semiconductor chip, so that heat generated when the semiconductor chip operates is provided. The heat can be radiated from the external connection terminal side (metal ball) to the printed circuit board or the like on which the semiconductor device is mounted via the heat radiation hole.

When the element on the semiconductor chip is insulated and protected by a passivation film or the like, a heat conductive metal material having excellent heat dissipation can be used as a filling material for the heat dissipation hole. According to the above method, heat during operation of the semiconductor chip can be dissipated to both the front and back surfaces of the semiconductor chip, and a semiconductor device having high heat dissipation can be provided, and the semiconductor device with improved operation reliability can be provided. Can be realized.

Next, a method of manufacturing a semiconductor device according to the present invention will be described. The method of manufacturing a semiconductor device according to the present embodiment includes forming a low-elasticity material from a photosensitive insulating material on a semiconductor chip, patterning the hole, and opening a hole and an electrode portion on the surface of the semiconductor chip at a desired position. Exposing,
Connecting the metal wiring layer on the low elastic modulus material on the surface of the semiconductor chip in a desired pattern by connecting to the electrode portion of the semiconductor chip, forming a photosensitive solder resist on the low elastic modulus material, and forming an external electrode terminal And a step of protecting the metal wiring layer other than a portion to be a land portion to be bonded, and a step of mounting the external electrode terminals on the land made of the metal wiring layer and performing a fusion bonding. A step of forming a low-elasticity material from a photosensitive insulating material on a semiconductor chip, patterning the hole to expose a hole and an electrode portion on the surface of the semiconductor chip at a desired position, and exposing a metal to the hole. Alternatively, a step of filling a material made of a non-metal, and a step of connecting to the electrode portion of the semiconductor chip, routing the metal wiring layer on the low elastic modulus material on the semiconductor chip surface in a desired pattern after passing over the semiconductor chip surface Forming a photosensitive solder resist on the low elastic modulus material to protect a metal wiring layer other than a portion serving as a land portion to which the external electrode terminal is bonded; and forming the external electrode terminal on the land formed of the metal wiring layer. And melt-bonding them.

A step of forming a low elastic modulus material from a photosensitive insulating material on the semiconductor chip and patterning the same to open and expose holes and electrode portions on the surface of the semiconductor chip at desired positions; Filling the hole with a metal or non-metallic material, connecting to the electrode portion of the semiconductor chip, passing through the surface of the semiconductor chip, and forming the desired pattern on the low elastic modulus material on the surface of the semiconductor chip and the inside of the hole. A step of laying a metal wiring layer on a wall, a step of forming a photosensitive solder resist on the low elastic modulus material, and a step of protecting the metal wiring layer other than a portion serving as a land to which the external electrode terminal is joined; Is mounted on a land made of a metal wiring layer, and is melt-bonded.

One embodiment will be described below with reference to the drawings. FIG. 5 is a cross-sectional view illustrating a manufacturing method in each step.

First, as shown in FIGS. 5A and 5B, a photosensitive insulating material is applied on a semiconductor chip 7 having a passivation film formed on the surface thereof, and dried and dried.
Patterning is performed by exposure and development. At this time, a low elastic modulus material 9 is formed, and the electrodes 8 of the semiconductor chip 7 are opened and exposed. Further, patterning is performed so that the heat radiation holes 14 are formed at positions where the external connection terminals of the low elastic modulus material 9 are formed. At this time, the cross-sectional shape of the low-modulus material 9 on the side surface of the opening of the electrode 8 is tapered rather than perpendicular to the surface of the electrode 8 of the semiconductor chip 7 by using, for example, scattered light instead of parallel light. . In addition, low elastic modulus material 9
May be formed by a screen printing method or the like.

The photosensitive insulating material for forming the low-modulus material 9 may be a low-modulus polyimide or a polymer such as epoxy, and may be any as long as it has a low-modulus and an insulating property. . The insulating material having photosensitivity does not need to be in a liquid state, and may be a material formed in a film shape in advance. It is sufficient that the electrode 8 of the semiconductor chip 7 can be exposed by laminating a film-shaped material on the semiconductor chip 7, exposing and developing. Furthermore, when a material having no photosensitivity is used as the insulating material, it is sufficient that the electrode 8 of the semiconductor chip 7 can be exposed by a mechanical process using laser or plasma or a chemical process such as etching.

Next, as shown in FIG. 5C, 85 [mu] m of silver (Ag) having a particle diameter of 2 [μm] is formed in the heat radiation hole 14 formed in the area of the low elastic modulus material 9 which is not wired. [Wt
%] As the heat dissipation material 15 by screen printing. Thereafter, the filled heat dissipation material 15 is dried and hardened.

Here, in the present embodiment, the conductive paste containing (Ag) as a main component is used as the heat radiation material 15 to be filled in the holes. Similarly, gold (Au), silver (Ag), copper (C
u), titanium (Ti), chromium (Cr), tungsten (W), palladium (Pd), tin (Sn), lead (P
The same effect can be obtained by b) filling with a metal mainly composed of nickel (Ni) or an alloy thereof. Further, a material having high thermal conductivity such as aluminum nitride (AlN), carbon (C), and alumina may be used instead of the metal powder. Although an epoxy resin is used as the paste resin, other resin polymers may be used.

Here, the heat dissipation holes 14 are filled with a paste for promoting heat dissipation, but the heat dissipation holes 14 of the low elastic modulus material 9 are filled.
Other than the above, the heat dissipation hole 14 may be filled with a material that promotes heat dissipation by an electroless plating method, a spray method, or the like, and then the mask may be peeled off.

Next, as shown in FIG. 5D, a metal wiring layer 10 is formed on the entire surface of the semiconductor chip 7 on the electrode 8 side by a vacuum evaporation method, a sputtering method, a CVD method or an electroless plating method. Then, in consideration of the number of electrodes 8 (the number of pins) and the area of the semiconductor chip 7, the metal wiring layer 10 is routed on the surface of the semiconductor chip 7 (on the low elastic modulus material 9) in a desired pattern. Note that, as an example here, Ti / Cu (titanium / copper) is used as the material of the metal wiring layer 10.

First, a photosensitive resist is applied, and a portion other than a desired pattern portion of the finished product is cured, and a reaction portion is removed.
Next, a metal layer, for example, a Cu (copper) layer is formed by using electrolytic plating. After the formation of the metal layer, the resist is melted and removed. Next, the metal layer material is immersed in an etching material capable of melting to form a desired pattern. At this time, after removing the resist, an etching resist may be formed in a desired pattern by using a photolithography technique to protect the pattern. Through the steps described above, the metal wiring layer 10 can be routed on the low elastic modulus material 9 on the surface of the semiconductor chip 7.

Next, as shown in FIG. 5E, a photosensitive solder resist is applied on the low elastic modulus material 9. Here, the solder resist 1 is formed using photolithography technology.
1 is formed to protect the metal wiring layer 10 other than the portion serving as the land 13 where the metal ball is mounted in a later step.

Next, as shown in FIG. 5 (f), the metal ball 12 is placed on the metal wiring layer 10 (land 13) and is melt-bonded. The material of the metal ball 12 may be solder, C
u (copper), Ni (nickel), or another metal or resin plated with solder may be used.

Through the above steps, the semiconductor device of this embodiment can be manufactured. Next, another embodiment of the method for manufacturing a semiconductor device of the present invention will be described with reference to the drawings. FIG. 6 is a cross-sectional view illustrating a method of manufacturing a semiconductor device in each step.

First, as shown in FIGS. 6A and 6B, a photosensitive insulating material is applied on a semiconductor chip 7 having a passivation film formed on the surface thereof, and dried and dried.
Patterning is performed by exposure and development. At this time, a low elastic modulus material 9 is formed, and the electrodes 8 of the semiconductor chip 7 are opened and exposed. Also, patterning is performed so as to form holes at positions where external connection terminals are to be formed. At this time, the exposing machine uses not the parallel light but the scattered light to make the cross-sectional shape of the low elastic modulus material 9 on the side surface of the opening tapered rather than perpendicular to the electrode 8 surface of the semiconductor chip 7. The low elastic modulus material 9 may be formed by a screen printing method or the like.

The insulating material having photosensitivity for forming the low elastic modulus material 9 may be a polymer such as polyimide or epoxy having a low elastic modulus, as long as it has a low elastic modulus and is insulating. . The insulating material having photosensitivity does not need to be in a liquid state, and may be a material formed in a film shape in advance. A film-like material is stuck on the semiconductor chip 7, exposed and developed to form the electrode 8 of the semiconductor chip 7.
What is necessary is just to be able to expose. Further, when a material having no photosensitivity is used as the insulating material, it is sufficient that the electrode 8 of the semiconductor chip 7 can be exposed by mechanical processing using laser or plasma, or chemical processing such as etching.

Next, as shown in FIG. 6C, the metal wiring layer 10 is formed on the entire surface of the semiconductor chip 7 on the electrode 8 side by the vacuum evaporation method, the sputtering method, the CVD method or the electroless plating method. Form. Then, in consideration of the number of electrodes 8 (the number of pins) and the area of the semiconductor chip 7, the metal wiring layer 10 is routed on the surface of the semiconductor chip 7 (on the low elastic modulus material 9) in a desired pattern. Note that, as an example here, Ti / Cu (titanium / copper) is used as the material of the metal wiring layer 10.

Here, when the heat dissipation hole 14 is filled with the metal wiring layer material as shown in FIG. 3, the metal wiring layer is formed until the heat dissipation hole is filled at the time of forming the metal wiring layer. Alternatively, it may be filled when forming a metal wiring pattern in the next step. When the heat dissipation hole 14 is filled with the external connection terminal material as shown in FIG.
Is formed under the condition that the heat radiation hole 14 is not completely filled.

Next, a photosensitive resist is applied, the portions other than the desired pattern portion of the finished product are cured, and the reaction portion is removed.
Next, a metal layer, for example, a Cu (copper) layer is formed by using electrolytic plating. After the formation of the metal layer, the resist is melted and removed. Next, the metal layer material is immersed in an etching material capable of melting to form a desired pattern. At this time, after removing the resist, an etching resist may be formed in a desired pattern by using a photolithography technique to protect the pattern. Through the above steps, the heat radiation holes 14 and the surface of the semiconductor chip 7 (on the low elastic modulus material 9)
The metal wiring layer 10 can be routed.

Next, as shown in FIG. 6D, a photosensitive solder resist is applied on the low elastic modulus material 9. Here, the solder resist 1 is formed using photolithography technology.
1 is formed to protect the metal wiring layer 10 other than the portion serving as the land 13 portion where the metal ball is mounted in a later step.

Next, as shown in FIG. 6E, the metal balls 12 are placed on the lands 13 of the metal wiring layer 10 and are joined by fusion. As a material of the metal ball 12, solder, Cu
(Copper), Ni (nickel), or another metal or resin plated with solder may be used.

Through the above steps, the semiconductor device of this embodiment can be manufactured.

[0047]

As described above, the semiconductor device of the present invention is a small and thin semiconductor device. Further, a heat radiation hole having good heat conductivity is formed in a low elastic modulus material formed on the semiconductor chip, and an external connection terminal (metal ball) is formed on the heat radiation hole. As a result, when the semiconductor device is mounted on the substrate,
The heat generated when the semiconductor chip operates can be radiated from the external connection terminals (metal balls) to the printed circuit board or the like on which the semiconductor device is mounted, through the heat radiation holes provided.

When the element on the semiconductor chip is insulated and protected by a passivation film or the like, a metal material having excellent heat conductivity, that is, a metal having a heat radiation effect can be used as a material for filling the heat radiation hole. As described above, with the structure of the semiconductor device of the present invention, heat during operation of the semiconductor chip can be dissipated to both the front and back surfaces of the semiconductor chip, and a semiconductor device having high heat dissipation can be provided. A semiconductor device with improved performance can be realized.

[Brief description of the drawings]

FIG. 1 is a schematic view showing a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a sectional view showing a semiconductor device according to one embodiment of the present invention;

FIG. 3 is a sectional view showing a semiconductor device according to one embodiment of the present invention;

FIG. 4 is a sectional view showing a semiconductor device according to one embodiment of the present invention;

FIG. 5 is a sectional view showing the method of manufacturing the semiconductor device according to the embodiment of the present invention;

FIG. 6 is a sectional view showing the method of manufacturing the semiconductor device according to one embodiment of the present invention;

FIG. 7 is a sectional view showing a conventional semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor chip 2 Flexible sheet-like element 3 Low elastic modulus material 4 Partial lead 5 Electrode terminal 6 Land 7 Semiconductor chip 8 Electrode 9 Low elastic modulus material 10 Metal wiring layer 11 Solder resist 12 Metal ball 13 Land 14 Heat radiation hole 15 Heat radiation Materials

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Nozomu Shimoishizaka 1-1, Yukicho, Takatsuki-shi, Osaka Matsushita Electronics Corporation (72) Inventor Takahiro Kumakawa 1-1-1, Yukicho, Takatsuki-shi, Osaka Matsushita Electronics Industrial Co., Ltd.

Claims (9)

[Claims] A semiconductor chip having electrode portions arranged on a surface thereof; and an insulating low elastic modulus material layer formed on the semiconductor chip surface exposing the electrode portions arranged on the surface of the semiconductor chip. A metal wiring layer connected to the electrode portion and extending in a pattern on the low elastic modulus material layer; and a metal wiring layer formed on the low elastic modulus material layer except for a part of the metal wiring layer. A solder resist, an external electrode terminal provided on a metal wiring layer opened without forming the solder resist, and a hole reaching the semiconductor chip surface in the low elastic modulus material layer, And a hole provided in the low-modulus material layer is provided in a region of the low-modulus material layer which is not wired by a metal wiring layer. 2. The semiconductor device according to claim 2, wherein a groove is provided in the low elastic modulus material layer instead of the hole. 3. A semiconductor chip having electrodes arranged on a surface thereof, and an insulating low-modulus material layer formed on the surface of the semiconductor chip by exposing the electrodes arranged on the surface of the semiconductor chip. Forming a metal wiring layer connected to the electrode portion and extending in a pattern on the low elastic modulus material layer, and a part of the metal wiring layer formed on the low elastic modulus material layer; A solder resist, and an external electrode terminal provided on an open metal wiring layer in which the solder resist is not formed, wherein a hole is formed in the low elastic modulus material layer below the external connection terminal. A semiconductor device comprising: 4. A semiconductor chip in which electrode portions are arranged on a surface and an insulating layer is formed in a region other than the electrode portion, and an electrode portion arranged on a surface of the semiconductor chip is exposed to expose the semiconductor chip surface. An insulating low-modulus material layer, a metal wiring layer connected to the electrode portion and extending in a pattern on the low-modulus material layer, and formed on the low-modulus material layer. A semiconductor resist comprising: a solder resist formed excluding a part of the formed metal wiring layer; and external electrode terminals provided on the open metal wiring layer where the solder resist is not formed. A semiconductor device, wherein a hole is formed in the low elastic modulus material layer below a connection terminal, and the hole is filled with a high thermal conductive material. 5. The semiconductor device according to claim 1, wherein the hole is connected to the external connection terminal and the surface of the semiconductor chip. 6. The method according to claim 1, wherein the holes are made of Au, Ag, Cu, Ti, Cr,
5. The semiconductor device according to claim 4, wherein the metal is filled with a metal mainly composed of W, Pd, Sn, Pb, and Ni or an alloy thereof.
3. The semiconductor device according to claim 1. 7. The semiconductor device according to claim 4, wherein the holes are filled with a material containing AlN, C, and alumina as main components. 8. The method according to claim 1, wherein the holes are made of Au, Ag, Cu, Ti, Cr,
5. The semiconductor device according to claim 4, wherein the conductive layer is formed on the inner wall of the hole with a metal or an alloy thereof containing W, Pd, Sn, Pb, and Ni as main components. 9. A step of forming a low elasticity material from a photosensitive insulating material on a semiconductor chip and patterning the same to open and expose holes and electrode portions on the semiconductor chip surface at desired positions; A step of filling the hole with a material made of metal or non-metal, connecting to the electrode portion of the semiconductor chip, and passing on the surface of the semiconductor chip in a desired pattern on the low elastic modulus material on the surface of the semiconductor chip. Routing a metal wiring layer to, forming a photosensitive solder resist on the low elastic modulus material, protecting the metal wiring layer other than the portion that becomes a land portion to which the external electrode terminal is bonded, and Mounting the semiconductor device on the land made of the metal wiring layer and performing a fusion bonding.