JPH11307002A - Method and device for generating cluster - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a cluster generating method where the size distribution of generated clusters can be narrowed to discharge them, and to provide a cluster generating device of the independent constitution where a skimmer of the prescribed shape is arranged in an exit of the clusters, and the length of a substantial cluster generating area can be adjusted. SOLUTION: This cluster generating method is constituted by cooling vapor generated in a cluster generating chamber 1 by a magnetron sputtering method to generate clusters, and by discharging them from a cluster exit 4 of the cluster generating chamber 1. Here, a skimmer 3 is arranged in the cluster exit 4, and a sputtering part is moved within the cluster generating chamber 1 to adjust the distance between the sputtering part and the skimmer 3, then the neutral, electropositive, or electronegative clusters of arbitrary size are generated. Thus, a size distribution of the clusters discharged from the cluster exit 4 is narrowed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for generating clusters by magnetron sputtering.
In particular, the present invention relates to a method capable of forming clusters of a metal or a dielectric having a high melting point and an apparatus therefor.

[0002]

2. Description of the Related Art Conventionally, a magnetron sputter gun has been used to apply an electric field to a metal or dielectric target in an argon gas atmosphere, sputter argon with generated electrons, and cool the generated vapor with helium gas or the like. Group of atoms or molecules (cluster)
Is generated, and the clusters are ionized, accelerated to a desired energy, and irradiated on a solid surface.

[0003] As a basic configuration of the cluster generating unit, a magnetron sputter unit is disposed in a cluster generating chamber to which argon gas and helium gas are supplied, and argon is sputtered by atoms of a target disposed in the sputter unit. Then, the generated vapor is cooled by the helium gas to combine the atoms of the target to form clusters, which are emitted from a slit-shaped cluster outlet (a throttle unit) provided at the end of the cluster generation chamber. ing.

[0004]

However, in the conventional cluster ion beam implantation technique, since the cluster outlet in the cluster generating section has a slit shape, the cluster narrowed and released at the outlet is dispersed.
There is a disadvantage that the cluster size distribution is expanded.

There is also a trade-off with other conditions such as the gas pressure of argon and helium, the supply amount, and the type of magnetron. However, the distance between the magnetron sputter portion, which is a substantial cluster generation region, and the outlet is described. If is constant, the size of the cluster cannot be changed.

The cluster generated by the cluster generation unit is usually generated neutrally. However, conventionally, the purpose of the present invention is only to ionize and use the generated cluster, and has a configuration independent of a cluster generation device. There was nothing. However, depending on the application, it is also required to be able to extract as neutral, positive, and negative clusters.

Accordingly, an object of the present invention is to solve the above-mentioned conventional disadvantages and to reduce the size distribution of generated clusters and to release the clusters, and to provide a cluster-shaped skimmer at the cluster outlet. It is another object of the present invention to provide a cluster generating apparatus having an independent configuration in which a plurality of clusters are arranged and the length of a substantial cluster generating area can be adjusted.

[0008]

Means for Solving the Problems The inventors of the present invention have made intensive studies on a conventional method and apparatus for generating a cluster having the above-mentioned problems, and as a result, dispose a skimmer of a predetermined shape at the cluster exit of a cluster generation chamber. By narrowing the size distribution of the skimmer, and by adjusting the length of the substantial cluster generation region, if other conditions are appropriately set, it is possible to use a high melting point metal or dielectric. Can generate clusters, as well as neutral, positive, and negative clusters,
We find that the size of the cluster can be set arbitrarily,
The present invention has been reached.

The cluster generation method according to the present invention is directed to a cluster generation method of cooling a vapor generated in a cluster generation chamber by a magnetron sputtering method with a cooling gas to generate clusters and discharging the clusters from a cluster outlet of the cluster generation chamber. The invention is characterized in that a skimmer is arranged at the outlet to narrow the size distribution of clusters emitted from the cluster outlet.

As a result, the cluster discharged from the cluster generation chamber to the vacuum side via the cluster outlet passes through the skimmer and has a narrow size distribution and becomes sharp.

A cluster generating apparatus according to the present invention is a cluster generating apparatus including a cluster generating chamber and a magnetron type sputtering unit disposed in the cluster generating chamber, wherein a skimmer is disposed at a cluster outlet of the cluster generating chamber. The size distribution of clusters emitted from the outlet is narrowed. As a result, neutral, positive or negative clusters can be generated, and the clusters pass through the skimmer, so that the size distribution becomes narrow and sharp, which is advantageous for the subsequent use of clusters for ion beam formation or the like.

Further, another aspect of the present invention is that, in the above-described cluster generating apparatus, the sputter section is movable in the cluster generating chamber so that the distance between the sputtering section and the skimmer can be adjusted. It is characterized by. Thereby, the substantial skimmer generation region can be adjusted, and the size of the generated skimmer can be set by variably adjusting the flow rate of the supplied gas and the sputtering rate.

Further, another aspect of the present invention is characterized in that, in the above-mentioned cluster generating apparatus, the skimmer has a cylindrical shape whose inner end side is narrowed. Thereby, the size distribution of the skimmer can be efficiently sharpened.

Still another aspect of the present invention is characterized in that, in the above-mentioned cluster generating apparatus, a second skimmer is arranged outside the skimmer. Thereby, the cluster is narrowed down by the two-stage skimmer, and the size distribution is sharpened.

[0015]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a cluster generating method and apparatus according to the present invention will be described with reference to FIG.
The cluster generating apparatus according to the present invention includes a cluster generating chamber 1 and a magnetron sputtering unit 2 disposed in the cluster generating chamber. A skimmer 3 is disposed at a cluster outlet 4 of the cluster generating chamber 1 and discharged from the outlet. The configuration is such that the size distribution of the cluster C is narrowed.
The skimmer 3 is configured to be able to move within, and to be able to adjust the distance between the skimmer 3.

The cluster generation chamber 1 is formed of a cylindrical body 5 provided with a front wall 6 and a rear wall 7, and the outer periphery of a substantial cluster generation region is formed of an inner and outer double cylinder, and an inlet 8
And, it is cooled by cooling water circulating through the outlet 9. The front wall 6 is provided with a cluster outlet 4, and the outlet is provided with a skimmer 3 having a shape in which the inner end side of the tubular body is narrowed.

The magnetron sputtering unit 2 is held by a holding pipe 10, and the holding pipe 10 is slidably supported by a bearing 11 provided on the rear wall 7. The bearing 11 is prevented from being discharged by the Wilson seal 12, and the interior of the bearing is maintained in a vacuum state by suction through the vacuum port 13.

A guide bar 14 extends from the rear wall 7,
A linear motion 15 is slidably held by the guide bar 14, and the rear end of the holding pipe 10 of the magnetron sputtering unit 2 is fixed to the linear motion 15. Linear motion 15 is screw shaft 1
6 is moved in the front-rear direction by rotating the knob 17, and the magnetron sputtering unit 2 at the tip of the holding pipe 10 is moved to move the
That is, the length of the virtual cluster generation region can be adjusted.

In the embodiment, a second skimmer 31 having a C-shaped cross section is disposed outside the skimmer 3.
Reference numeral 18 denotes a shutter which is opened and closed by an opening / closing knob 19, and P denotes a vacuum region.

As shown in FIG. 2, the magnetron sputtering unit 2 has a magnet 21 disposed in a magnetic housing 21 and a target T fixed to the front side of the magnetic housing 21. Circulating pipe 24
The cooling water W is circulated inside the housing via the. A power supply wire 23 is provided inside the holding pipe 10.
And an argon gas supply pipe 25 through which argon gas A
r is efficiently supplied to the periphery of the magnetron sputtering unit 2. Helium gas, which is a cooling medium, is usually supplied into the cluster generation chamber 1 from a supply port 20 provided in the rear wall 7.

In the above-described configuration, argon sputters the target T in the cluster generation chamber 1, and the released target atoms are ionized in the process of being turned into plasma and cooled by helium, whereby the atoms are cooled. Clustering produces neutral clusters and positive or negative clusters C. Cluster C generated
Is sucked and discharged from the cluster outlet 4 to the vacuum P side, but by passing through the skimmer 3, the size distribution of the clusters is narrowed. Can be sharpened more.

By moving the magnetron sputtering unit 2 to adjust the length of the substantial cluster generation region, other conditions such as the flow rates of argon and helium, the type of magnetron, and the sputter rate are appropriately set. By doing so, clusters can be generated even with metals and dielectrics having a high melting point, and neutral, positive, and negative clusters can be generated, and the size of the clusters can be arbitrarily set.

[0023]

According to the cluster generation method of the present invention, the size distribution of the cluster released from the cluster generation chamber to the vacuum side via the cluster outlet is narrowed by passing through the skimmer. it can.

According to the cluster generating apparatus of the present invention, neutral, positive or negative clusters can be generated according to the type of the target material (aluminum, silicon, iron, cobalt, etc.), and the clusters pass through the skimmer. The size distribution becomes narrower and sharper, which is advantageous for the subsequent use of clusters for ion beam formation or the like.

In another embodiment, the substantial skimmer generation region can be adjusted, and the size of the generated skimmer is appropriately set by variably adjusting the flow rate of the supplied gas and the sputtering rate. be able to.

In still another embodiment, the size distribution of the skimmer can be efficiently sharpened. In another embodiment, the cluster is narrowed by a two-stage skimmer to reduce the size distribution. More sharpening can be achieved.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a cluster generation device of the present invention.

FIG. 2 is a sectional view of a magnetron sputtering unit.

[Explanation of symbols]

 1: Cluster generation chamber 2: Magnetron sputtering unit 3: Skimmer 31: Second skimmer 4: Cluster exit

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[Procedure amendment]

[Submission date] March 29, 1999

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Claims

[Correction method] Change

[Correction contents]

[Claims]

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0009

[Correction method] Change

[Correction contents]

The cluster generation method according to the present invention is directed to a cluster generation method for cooling a vapor generated in a cluster generation chamber by a magnetron sputtering method with a cooling gas to generate clusters and discharging the clusters from a cluster outlet of the cluster generation chamber. Arranging a skimmer at the outlet, moving the sputter part in the cluster generation chamber and adjusting the distance between the sputter part and the skimmer to generate a neutral, positive or negative cluster of any size, The size distribution of clusters emitted from the cluster outlet is narrowed.

[Procedure amendment 3]

[Document name to be amended] Statement

[Correction target item name] 0010

[Correction method] Change

[Correction contents]

[0010] Thereby, a substantial skimmer generation region can be adjusted, and a neutral, positive or negative cluster can be generated by variably adjusting a flow rate of a supplied gas or a sputtering rate. Can be set. In addition, clusters released from the cluster generation chamber to the vacuum side via the cluster outlet have a narrow size distribution by passing through the skimmer,
It will be sharp.

[Procedure amendment 4]

[Document name to be amended] Statement

[Correction target item name] 0011

[Correction method] Change

[Correction contents]

The cluster generating apparatus according to the present invention is a cluster generating apparatus including a cluster generating chamber and a magnetron sputtering unit disposed in the cluster generating chamber, wherein a skimmer is disposed at a cluster outlet of the cluster generating chamber. The sputter unit is configured to move within the cluster generation chamber to adjust the distance between the sputter unit and the skimmer, generate a neutral, positive or negative cluster of any size, and exit the cluster. Characterized in that the size distribution of clusters emitted from is narrowed. As a result, the substantial skimmer generation area can be adjusted, and neutral, positive or negative clusters can be generated by variably adjusting the supplied gas flow rate and sputtering rate, and the size of the generated cluster can be set can do. In addition, clusters released from the cluster generation chamber to the vacuum side via the cluster outlet have a narrow size distribution by passing through the skimmer and become sharp, which is advantageous for the subsequent use of clusters for ion beam formation and the like. It is.

[Procedure amendment 5]

[Document name to be amended] Statement

[Correction target item name] 0012

[Correction method] Deleted

[Procedure amendment 6]

[Document name to be amended] Statement

[Correction target item name] 0013

[Correction method] Change

[Correction contents]

Further, another aspect of the present invention is characterized in that, in the above-mentioned cluster generating apparatus, the skimmer has a cylindrical shape whose inner end side is narrowed. This makes it possible to efficiently sharpen the size distribution of clusters.

[Procedure amendment 7]

[Document name to be amended] Statement

[Correction target item name] 0020

[Correction method] Change

[Correction contents]

As shown in FIG. 2, the magnetron sputtering unit 2 has a magnet 21 disposed in a magnetic housing 22 and a target T fixed to the front side of the magnetic housing 22. Circulating pipe 24
The cooling water W is circulated inside the housing via the. A power supply wire 23 is provided inside the holding pipe 10.
And an argon gas supply pipe 25 through which argon gas A
r is efficiently supplied to the periphery of the magnetron sputtering unit 2. Helium gas, which is a cooling medium, is usually supplied into the cluster generation chamber 1 from a supply port 20 provided in the rear wall 7.

[Procedure amendment 8]

[Document name to be amended] Statement

[Correction target item name] 0025

[Correction method] Change

[Correction contents]

In another aspect, the substantial cluster generation region can be adjusted, and the size of the cluster to be generated is appropriately set by variably adjusting the flow rate of the supplied gas and the sputtering rate. be able to.

[Procedure amendment 9]

[Document name to be amended] Statement

[Correction target item name] 0026

[Correction method] Change

[Correction contents]

In still another embodiment, the size distribution of clusters can be sharpened efficiently,
In another embodiment, the cluster is narrowed down by a two-stage skimmer, and the size distribution can be sharpened.

Claims (5)

[Claims] 1. A cluster generating method for cooling a vapor generated in a cluster generating chamber by a magnetron sputtering method with a cooling gas to generate a cluster and discharging the cluster from a cluster outlet of the cluster generating chamber, wherein a skimmer is arranged at the cluster outlet. A method for generating clusters, wherein the size distribution of clusters emitted from the cluster outlet is narrowed. 2. A cluster generating apparatus comprising: a cluster generating chamber; and a magnetron sputtering unit disposed in the cluster generating chamber, wherein a cluster is disposed at a cluster outlet of the cluster generating chamber, and the cluster is emitted from the cluster outlet. A cluster generation apparatus characterized in that the size distribution of the clusters is narrowed. 3. The cluster generator according to claim 2, wherein the sputter unit is configured to be movable in the cluster generation chamber, and is configured to be able to adjust a distance between the sputter unit and the skimmer. apparatus. 4. The cluster generating apparatus according to claim 2, wherein the shape of the skimmer is a cylindrical shape having a narrowed inner end. 5. The cluster generation device according to claim 2, wherein a second skimmer is arranged outside the skimmer.