JPH11293463A - Production of semiconductor and apparatus for production of semiconductor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the productivity of a process for producing a thin film for a semiconductor. SOLUTION: At the tide of depositing the thin film of the semiconductor on a wafer 4 placed in a vacuum vessel 5 by spraying and vaporizing liquid raw material 27 in a vacuum vessel 5, the operating sound of a mechanism for intermittently supplying the liquid raw material to a vaporization nozzle 21 is detected by using a liquid raw material packing check mechanism, for example, an acoustic sensor 201, by which the packing of the liquid raw material 27 between the vaporization nozzle 21 and a liquid raw material supply valve 22 is surely checked under conditions under which deposition is executed without removing the vaporization nozzle 21 from the vacuum vessel 5.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for producing a semiconductor thin film using a liquid raw material obtained by liquefying a plurality of liquid raw materials and solid raw materials in the production of semiconductors.

[0002]

2. Description of the Related Art As a conventional technique, in a method of manufacturing a thin film for a semiconductor, a liquid raw material is sprayed in a vacuum, the sprayed liquid is applied to a substrate, and the substrate is heated so that the liquid in the liquid applied to the substrate is heated. There is a method in which a volatile solvent is volatilized to form a thin film. An example of this prior art is disclosed in Japanese Patent Laid-Open No. 6-306181.
There is a method and an apparatus for manufacturing an organic optical thin film disclosed in Japanese Patent Application Laid-Open Publication No. H11-209,878. FIG. 8 is a configuration diagram of the apparatus.

[0003] In the apparatus shown in FIG. 8, the vacuum vessel 5 is evacuated by an evacuation unit 6. Wafer 4 is susceptor 3
It is held on top and heated. A liquid raw material in which an organic optical thin film material or an inorganic optical thin film material is dissolved in a volatile solvent is sprayed from the inside of the liquid raw material tank 25 through the opening and closing mechanism 301 into the vacuum vessel 5 from the control nozzle unit 300. You. The sprayed liquid raw material becomes droplets and reaches the wafer 4 heated and held on the susceptor 3 as droplets, and the wafer 4
Applied on top. Next, in the liquid raw material applied in a liquid state on the wafer 4, the volatile component is volatilized by the heat from the susceptor 3 and the surface heating device 306, and the solid component is removed from the wafer 4.
A remaining film is formed thereon. At this time, the solvent component volatilized by the heat becomes a gas and is released to the vacuum vessel 5. A part of the released gas is exhausted by the vacuum exhaust unit 6, but most of the released gas is adsorbed by the cold trap # 304 cooled to a low temperature and condensed again to become a liquid and maintain a required vacuum.

[0004]

In the above prior art,
When the film formation is started for the first time, whether the liquid material is filled in the control nozzle unit 300 is determined by a vacuum container for performing the film formation.
It cannot be confirmed under the condition that the film is formed while it is attached to 5. Therefore, it is necessary to perform film formation for some confirmation before the actual film formation, and to confirm that the liquid material is filled in the control nozzle unit 300. take time. To avoid this problem,
It is conceivable to check beforehand that the control nozzle unit 300 alone is filled with the liquid raw material. However, depending on the liquid raw material, discharging the liquid raw material to a normal space is environmentally significant, so special processing is required. May have to be performed in a processing facility that can perform Therefore, processing before film formation may be very complicated. Further, depending on the liquid raw material, when the liquid raw material is spouted into a normal environment, the liquid raw material may cause a reaction and block the control nozzle 300. Therefore, it is necessary to disassemble and adjust the ejection nozzle unit 300 again, which is not practical. In addition, when the liquid raw material itself is very expensive, there are various problems such as using an extra liquid raw material for checking the operation. These problems reduce the productivity of the device.

[0005] In the above technique, when the film formation is started for the first time, it is determined whether or not the liquid material has been filled in the control nozzle unit 300 while keeping the film in the vacuum vessel 5 for performing the film formation. The inability to see below is the cause of the problem. As a result, various inconveniences have occurred and productivity has been reduced.

[0006] An object of the present invention is to provide a semiconductor device on a substrate by supplying at least a part of a liquid raw material to be a thin film by atomizing the liquid raw material in a space where the thin film is formed by spraying and then supplying it to the substrate surface. An object of the present invention is to improve productivity at the start of film formation when a semiconductor is manufactured by forming a thin film for use.

[0007]

The object of the present invention is to provide a mechanism for spraying a liquid material into a vacuum vessel when the film is first formed, so that the liquid material is filled to a position where the liquid material can be sprayed. , And is detected by a sensor. By starting film formation (spraying) after confirming that the liquid material has been filled to a position where the liquid material can be sprayed, the liquid material is reliably ejected from the start into the vacuum vessel in which film formation is performed.

As a method for confirming that the liquid material is filled in the mechanism for spraying the liquid material into the vacuum vessel, there are a spraying mechanism, that is, a method for detecting operation noise and vibration generated by the liquid material vaporizing mechanism, a method for detecting the liquid material, A method of measuring and detecting the electric conductivity and heat conductivity of the liquid material filling section in the liquid material vaporization mechanism by utilizing the fact that the electric conduction and heat conduction of the liquid material are better than that of air; There is a method of measuring and detecting the light transmittance of the liquid material filling portion in the liquid material vaporizing mechanism by utilizing the fact that the light transmittance is lower than that of air. further,
Mist ejected from the liquid source vaporizing mechanism may be optically detected.

As described above, the liquid raw material is atomized by spraying in the space where the thin film is formed, then vaporized, and supplied to the surface of the substrate to form a thin film for a semiconductor element on the substrate to form a semiconductor. It is preferable to use a chemical vapor deposition reaction for the film formation for producing the.

[0010]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a configuration diagram according to a first embodiment of the present invention. The semiconductor manufacturing apparatus shown in FIG.
A vacuum vessel 5 containing a susceptor 3 on which a vacuum vessel is mounted, a vacuum exhaust pipe 61 connected to the vacuum vessel 5, a vacuum exhaust section 6 connected to the vacuum exhaust pipe 61 via a vacuum exhaust valve 62, A gas processing unit 7 connected to the exhaust unit 6 via an exhaust pipe 63, a vacuum gauge 11 for measuring the internal pressure of the vacuum vessel 5, and a first pipe 101 for controlling the wall temperature and a first pipe 101 for controlling the wall temperature in the vacuum vessel 5. A wall temperature controller 10 connected via two pipes 102 and a wafer handler connected to the vacuum vessel 5 via a second gate valve 93 in the preliminary chamber and connected to the outside atmosphere via a first gate valve 92 in the preliminary chamber. A spare chamber 9 in which a gas supply valve 82 is interposed and a gas supply unit 8 connected to the vacuum vessel 5 via a gas supply valve 81;
A liquid material tank 25 which is connected to a vaporizing nozzle 21 mounted on the upper part of the vacuum vessel 5 by a liquid material supply pipe 23 having a liquid material supply valve 22 interposed therebetween and contains a liquid material 27; 25, a liquid source delivery gas supply unit 28 connected via a liquid source delivery gas pipe 26, and a vaporizing nozzle control signal line 2 to the vaporizing nozzle 21.
And an acoustic sensor 2 arranged near the vaporizing nozzle 21 outside the vacuum vessel 5.
01, a signal processing unit 203 connected to the acoustic sensor 201 via a signal line 202, and a signal processing unit output line 204 for transmitting the output of the signal processing unit 203 to the vaporizing nozzle operation control unit 29.
And is configured.

The upstream end opening of the liquid source supply pipe 23 is disposed in the liquid phase portion of the liquid source tank 25, and the downstream end opening of the liquid source delivery gas pipe 26 is disposed in the gas phase portion of the liquid source tank 25. . The susceptor 3 has a heater 31.
Is decorated. Although only one gas supply unit 8 is shown in FIG. 1, a gas supply unit for supplying a gas source is provided in addition to the inert gas used for gas replacement.

The gas-phase chemical reactor 1 includes a vacuum vessel 5, a preliminary chamber 9 attached to the vacuum vessel 5, a susceptor 3, and a vaporizing nozzle 21, and is provided with a vaporizing nozzle 21 and a liquid material supply valve 22. The liquid raw material supply pipe 23 constitutes a liquid raw material vaporizing mechanism.

Hereinafter, the operation of the present invention when a liquid raw material is used in the above-described apparatus will be described. In this embodiment, the method of manufacturing a thin film for a semiconductor is reduced pressure chemical vapor deposition. First, the vacuum container 5 is evacuated by the evacuation unit 6. Next, an inert gas from the gas supply unit 8 is introduced into the vacuum vessel 5. The supply of the inert gas is stopped, and the vacuum container 5 is evacuated again by the evacuation unit 6. This vacuum evacuation and the introduction of the inert gas are repeated several times to replace the gas in the vacuum vessel 5. Next, the wafer 4 held in the preliminary chamber 9 is moved to the preliminary chamber 1
The gate valve # 92 is opened to carry the susceptor 3 heated by the heater 31 onto the susceptor 3. The gas in the vacuum vessel 5 is replaced again. After completion of the gas replacement, the liquid source 27 and the gas source are supplied to form a film. After film formation, gas replacement is performed, and the wafer 4 on the susceptor 3 is replaced with a wafer placed in the preliminary chamber 9. This is the cycle of manufacturing a low-pressure chemical vapor deposition apparatus.

Next, the start-up of the gas phase chemical reaction apparatus 1 before the first film formation will be described. The liquid source 27 passes through the liquid source supply pipe 23 by pressurizing the liquid surface of the liquid source tank 25 via the liquid source delivery gas pipe 26 with the gas from the liquid source delivery gas supply unit 28, and the liquid source supply valve Reach $ 22. Before the film formation, the liquid source supply valve # 22 is used so that the liquid source 27 is not ejected into the vacuum vessel 5.
Is usually closed. Therefore, the inside of the vaporization nozzle 21 is not filled with the liquid raw material 27 before the first film formation, but is usually filled with an inert gas, nitrogen gas or the like in many cases. In order to form a film, it is necessary to fill the liquid material 27 up to the tip of the vaporization nozzle 21. Vaporizing nozzle 2
In order to evacuate the gas between the liquid supply valve # 1 and the liquid source supply valve # 22 and fill the liquid source 27, the liquid source supply valve # 22 is opened, the vaporization nozzle 21 is operated, and the vaporization nozzle 21 and the liquid source supply valve # 22 are Remove the gas that exists between.
At this time, it is confirmed by the liquid material filling confirmation mechanism that the liquid material 27 has been filled between the vaporizing nozzle 21 and the liquid material supply valve # 22.

In this embodiment, the liquid material filling confirmation mechanism is a sound sensor 201, a signal line 202 for sending a signal from the acoustic sensor 201 to a signal processing unit 203, and a signal from the acoustic sensor 201 to process the liquid material 27 into the vaporizing nozzle 21. Signal processing unit 2 for determining that the space between liquid and supply valve # 22 has been charged
And a signal processing unit output line 204 for sending a signal for controlling the operation of the vaporizing nozzle 21 based on the processing result of the signal processing unit 203 to the vaporizing nozzle operation control unit 29.

The operation of the mechanism for confirming the filling of the liquid material in this embodiment will be described below. The vaporizing nozzle 21 of the present embodiment employs a structure in which the liquid material 27 is intermittently sprayed from the vaporizing nozzle 21 into the vacuum vessel 1. Therefore, the vaporizing nozzle 2
1 or a mechanism for intermittently supplying the liquid source 27 between the vaporizing nozzle 21 and the liquid source supply valve # 22. When the liquid source 27 is not filled between the vaporization nozzle 21 and the liquid source supply valve # 22,
This mechanism will operate intermittently in the gas. In this case, the mechanism for intermittently supplying the liquid material 27 performs a contact operation between the solids, and generates an intermittent sound due to the contact operation between the solids. This intermittent sound is detected by the acoustic sensor 201 arranged near the vaporizing nozzle 21. The detected signal passes through the signal line 202 and the signal processing unit 2
Sent to 03.

Next, when the liquid source 27 is filled between the vaporizing nozzle 21 and the liquid source supply valve # 22, the above-described mechanism for intermittently supplying the liquid source 27 operates in the liquid source 27. Therefore, during operation, the surface is
7, the contact sound during the operation is different from the sound when the solids are in contact with each other when the liquid material 27 is not filled. This operation noise is also generated in the same manner as when the liquid material 27 is not filled between the vaporizing nozzle 21 and the liquid material supply valve # 22.
The signal is detected by an acoustic sensor 201 disposed in the vicinity and sent to a signal processing unit 203 through a signal line 202.

In the signal processing unit 203, the acoustic sensor 201
When the change of the operation sound from the above is detected, the pattern of the signal is compared to determine whether or not the liquid raw material 27 is filled, and it is determined whether or not the liquid raw material 27 is filled between the vaporizing nozzle 21 and the liquid raw material supply valve # 22. I do. If it is determined that the liquid material 27 has been filled between the vaporizing nozzle 21 and the liquid material supply valve # 22, a signal for stopping the operation of the vaporizing nozzle 21 is sent from the signal processing unit output line 204 to the vaporizing nozzle operation control unit 29. And the operation of the vaporizing nozzle 21 is stopped. Thus, the liquid source 27 is reliably filled between the vaporization nozzle 21 and the liquid source supply valve # 22 under the condition that the film formation is performed without removing the vaporization nozzle 21 from the vacuum vessel 5.

The present embodiment is characterized in that the reliability of the apparatus is increased with a relatively simple configuration without any modification of the vaporizing nozzle 21.

In the above embodiment, the operation sound generated by the mechanism for intermittently supplying the liquid raw material 27 to the vaporizing nozzle 21 is detected to confirm the filling of the liquid raw material. May be detected. The operation sound emitted by the mechanism for intermittently supplying the liquid raw material 27 to the vaporizing nozzle 21 is vibration of the mechanism, and this vibration is transmitted to peripheral members.
The same effect can be obtained by detecting the operation sound.

FIG. 2 is a block diagram according to a second embodiment of the present invention. This embodiment is different from the embodiment shown in FIG. 1 in that an electric conduction sensor 210 as shown in FIG. The other configuration is the same as that of the first embodiment, so the same reference numerals are given and the description is omitted. The entire procedure at the time of film formation is exactly the same as that of the embodiment of FIG. In the present embodiment, the liquid material filling confirmation mechanism is provided by the vaporizing nozzle 21.
It comprises a conductive sensor 210, a signal line 202, a signal processing unit 203, and a signal processing unit output line 204 provided therein.

FIG. 3 shows the detailed structure of the conductive sensor 210. A part of the vaporizing nozzle 21 is a conductive sensor 210. The conductive sensor insulator 2 is provided on a part of the wall of the vaporizing nozzle 21.
10c, the conductive sensor first electrode 210a and the conductive sensor second electrode 210b are disposed in the conductive sensor insulator 210c with a predetermined distance therebetween, and the liquid raw material 27 is filled to a position where it can be sprayed onto the vaporizing nozzle 21. At this time, one end of each of both electrodes is immersed in the filled liquid raw material. Although not shown in the figure, a device for applying a voltage is connected to each electrode. The direction in which the liquid raw material 27 flows when being filled is indicated by an arrow a in the figure. This direction is for convenience, and the operation of the conductive sensor 210 is guaranteed even from another direction.

Next, the operation of the conductive sensor 210 will be described. When the liquid material 27 is not filled between the vaporizing nozzle 21 and the liquid material supply valve # 22, the electric conduction sensor 2
Ten two electrodes, the conductive sensor first electrode 210a
And the conductive sensor second electrode 210b is in a gas. Therefore, there is no electrical conduction between the electrodes, so that no current flows or the resistance value is extremely large.
This state is sent to the signal processing unit 203 via the signal line 202. The liquid source supply valve # 22 is opened, and the liquid source 27 is connected to the vaporization nozzle 27 and the liquid source supply valve # 22.
When filled, the two electrodes of the conductive sensor 210, the first conductive sensor electrode 210a and the second conductive sensor electrode 21
0b is filled with the liquid raw material 27. Therefore, a circuit is formed electrically between the two electrodes, and a current flows or the electrode has a finite resistance value. Also in this state, the liquid raw material 27 is connected to the vaporizing nozzle 21 and the liquid raw material supply valve # 22.
The signal is sent to the signal processing unit 203 via the signal line 202 as in the case where the space is not filled. The signal processing unit 203 detects the current or a finite resistance value of the conductive sensor 210 caused by the filling of the liquid raw material 27, and determines the filling of the liquid raw material 27 between the vaporizing nozzle 21 and the liquid raw material supply valve # 22.

When the liquid material supply valve # 22 is opened, the operation of the vaporizing nozzle 21 (for example, the liquid material
Is intermittently supplied to the vaporizing nozzle 21 and the vaporizing nozzle 21
), The signal processing unit 203 outputs a signal for stopping the operation of the vaporizing nozzle 21 based on the determination of the charging from the signal processing unit output line 204 to control the vaporizing nozzle operation. The output is output to the unit 29, and the operation of the vaporizing nozzle 21 is stopped. Thereby, the liquid raw material 27
Is reliably filled and confirmed between the vaporizing nozzle 21 and the liquid source supply valve # 22 under the condition that the film formation is performed without removing the vaporizing nozzle 21 from the vacuum vessel 5.

The present embodiment is characterized in that the remodeling of the vaporizing nozzle 21 is relatively simple, and no special sensor is required separately.

FIG. 4 shows a third embodiment of the present invention, and is a detailed view of another structure of the electric conduction sensor 210. This embodiment is different from the second embodiment in that the first electrode 210a and the second electrode 210b are connected to the vaporizing nozzle 21 or the vaporizing nozzle 2 as shown in FIG.
1 in that they are separately arranged on opposing surfaces of a pipeline adjacent to 1. Since other configurations are the same as those of the second embodiment, illustration and description are omitted. Even in this case, the conductive sensor 21
A value of 0 has the same effect as in FIG. In this embodiment, since the two electrodes are divided and arranged not at one place, the size of each conductive sensor insulator 210c can be reduced. Therefore, it is convenient when the restriction on the size of the vaporizing nozzle 21 is severe. Although not shown, one of the two electrodes of the conductive sensor 210 can be used as one of the electrodes when the vaporization nozzle 21 has a metal wall surface. In this case, it is effective when there are further restrictions on the installation location of the sensor.

FIG. 5 is a structural view of a heat conduction sensor 220 according to a fourth embodiment of the present invention, in which a heat conduction sensor is used to confirm the filling of the liquid material. The overall configuration of the device is the same as that of FIG. 2 except that a heat conduction sensor 220 is used instead of the conduction sensor 210. Heat conduction sensor 22
0 is provided in a part of the vaporizing nozzle 21. The heat conduction sensor 220 is provided with two electrodes, that is, a heat conduction sensor first electrode 220a and a heat conduction sensor second electrode 220b, separated from each other on a heat conduction sensor insulator 220d.
A heat conduction sensor heat wire 220c is provided on a side indicated by an arrow a in the drawing, which is a direction in which the gas flows when the gas 7 is filled. Although not shown, the heat conduction sensor first electrode 22 is not shown.
A predetermined voltage is applied between Oa and the heat conduction sensor second electrode 220b, and a current is caused to flow through the heat conduction sensor heating wire 220c to generate a constant heat.

When the liquid material 27 is not filled between the vaporizing nozzle 21 and the liquid material supply valve # 22, there is a gas around the heat conduction sensor heating wire 220c, and heat is generated from the heat conduction sensor heating wire 220c. Dissipated into gas. This state (current value flowing) is transmitted to the signal processing unit 203 via the signal line 202. Next, when the liquid raw material 27 is filled between the vaporization nozzle 21 and the liquid raw material supply valve # 22, the liquid raw material 27 is formed around the heat conduction sensor heating wire 220c. Since the surroundings of the heat conducting sensor heating wire 220c become liquid, heat dissipation increases. The heat conducting sensor heating wire 220c that is controlled to generate a constant amount of heat will flow a large amount of current. This state is also transmitted to the signal processing unit 203 via the signal line 202, similarly to the case where the liquid source 27 is not filled between the vaporization nozzle 21 and the liquid source supply valve # 22.

The signal processing unit 203 detects a change in the current flowing through the heat wire 220c caused by the filling of the liquid material 27 and charges the liquid material 27 between the vaporizing nozzle 21 and the liquid material supply valve # 22. judge. Based on this determination, a signal for stopping the operation of the vaporizing nozzle 21 is output from the signal processing unit output line 204 to the vaporizing nozzle operation control unit 29, and the operation of the vaporizing nozzle 21 is stopped. Thus, the liquid source 27 is reliably filled and confirmed between the vaporization nozzle 21 and the liquid source supply valve # 22 under the condition that the film formation is performed without removing the vaporization nozzle 21 from the vacuum vessel 5.

The present embodiment also has a feature that the remodeling of the vaporizing nozzle 21 is relatively simple, and a special sensor is not required.

FIG. 6 is a detailed view of another structure of the heat conduction sensor 220 according to the fifth embodiment of the present invention. This embodiment is different from the fourth embodiment in that the heat conduction sensor 220 is replaced with a heat conduction sensor first electrode 22 as shown in FIG.
0a and the second electrode 220b of the heat conduction sensor
Alternatively, the heat conduction sensor 220 is separately arranged on the mutually facing surfaces of the conduit adjacent to the vaporization nozzle 21 and the heat conduction sensor heat wire 220c is stretched therebetween. Other configurations are the same as those of the fourth embodiment, and illustration and description are omitted. Even in this case, the heat conduction sensor 220
Has the same effect as that of FIG. In the present embodiment, since the two electrodes are not arranged at one place but divided and arranged, the size of each conductive sensor insulator 220d can be reduced, and the heat conducting sensor heating wire 220c can be extended. , The sensitivity is improved.

FIG. 7 is a block diagram according to a sixth embodiment of the present invention. The numbers in the figure indicate the same ones as those in FIG.
This embodiment is different from the first embodiment in that, instead of the acoustic sensor 201, a pair of light emitting elements 230 arranged on wall surfaces facing each other across the vaporizing nozzle 21 of the vacuum vessel 5, An element 231 is provided, and these are connected to the signal processing unit 203 by a light emitting element signal line 232 and a light receiving element signal line 233, respectively. The other configuration is the same as that of the first embodiment, so the same reference numerals are given and the description is omitted. The entire procedure at the time of film formation is exactly the same as that of the embodiment of FIG.

In this embodiment, the liquid material filling confirmation mechanism is
A light emitting element 230 for irradiating light from the side to a tip portion of the vaporizing nozzle 21 on the vacuum vessel 5 side, and a light receiving element 23 for receiving this light
1. Light emitting element signal line 2 for driving light emitting element 230
32, a light receiving element signal line 233 for sending an output signal from the light receiving element to the signal processing unit 203, a signal processing unit 203 for processing an output signal of the light receiving element, and a signal processing unit output line 204.

Evaporating nozzle 21 and liquid material supply valve # 2
2 is not filled with the liquid raw material 27,
When the vaporizing nozzle 21 is operated, from the vaporizing nozzle 21,
The gas in the vaporizing nozzle 21 is ejected into the vacuum vessel 5, but the light of the light emitting element 230 is detected by the light receiving element 231 with little attenuation because it is a gas. The signal of the light receiving element 231 at this time is sent to the signal processing unit 203 via the light receiving element signal line 233. On the other hand, when the space between the vaporizing nozzle 21 and the liquid raw material supply valve # 22 is filled with the liquid raw material 27, the atomized droplets are ejected into the vacuum vessel 5 near the tip of the vaporizing nozzle 21; The light 230 is detected by the light receiving element 231 in a greatly attenuated state. At this time, the signal of the light receiving element 231 is also sent to the signal processing unit 203 via the light receiving element signal line 233 as in the case where the space between the vaporizing nozzle 21 and the liquid material supply valve # 22 is not filled with the liquid material 27. Can be

The signal processing section 203 detects a change in the signal from the light receiving element 231 due to the filling of the liquid raw material 27, and determines whether the liquid raw material 27 has been charged between the vaporizing nozzle 21 and the liquid raw material supply valve # 22. . Based on this determination,
A signal for stopping the operation of the vaporizing nozzle 21 is output from the signal processing unit output line 204 to the vaporizing nozzle operation control unit 29, and the operation of the vaporizing nozzle 21 is stopped. Thus, it is confirmed that the liquid source 27 is reliably filled between the vaporization nozzle 21 and the liquid source supply valve # 22 under the condition that the film formation is performed without removing the vaporization nozzle 21 from the vacuum vessel 5.

The present embodiment is characterized in that the reliability of the apparatus can be improved by a relatively simple modification.

The light emitting element 230 and the light receiving element 231
Is disposed at the position of the first electrode 210a and the second electrode 210b of the conductive sensor shown in FIG. 4 so as to detect the presence or absence of filling of the liquid raw material by utilizing the difference in light transmittance between air and the liquid raw material. It may be.

As described above, the vaporizing nozzle 21 is connected to the vacuum vessel 5
It is possible to confirm that the liquid source 27 is reliably filled between the vaporizing nozzle 21 and the liquid source supply valve # 22 under the conditions for forming a film without removing the liquid source 27 from the liquid source supply valve # 22.

[0039]

According to the present invention, without removing the vaporizing nozzle 21 from the vacuum vessel 5, the liquid raw material 27 can be reliably connected between the vaporizing nozzle 21 and the liquid raw material supply valve # 22 under the conditions for forming a film. Can be confirmed to be filled, so that productivity is improved.

[Brief description of the drawings]

FIG. 1 is a system configuration diagram showing a first embodiment of the present invention.

FIG. 2 is a system configuration diagram showing a second embodiment of the present invention.

FIG. 3 is a cross-sectional view showing a conductive sensor according to the embodiment shown in FIG.

FIG. 4 is a cross-sectional view showing a conductive sensor according to a third embodiment of the present invention.

FIG. 5 is a sectional view showing a heat conduction sensor according to a fourth embodiment of the present invention.

FIG. 6 is a sectional view showing a heat conduction sensor according to a fifth embodiment of the present invention.

FIG. 7 is a system configuration diagram showing a sixth embodiment of the present invention.

FIG. 8 is a system configuration diagram showing an example of a conventional device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Gas-phase chemical reaction apparatus 2 Liquid material vaporization mechanism 3 Susceptor 4 Wafer 5 Vacuum container 6 Vacuum exhaust part 7 Gas processing part 8 Gas supply part 9 Preparatory room 10 Wall temperature control part 11 Vacuum gauge 21 Vaporization nozzle 22 Liquid material supply valve 23 Liquid source supply pipe 24 Vaporization nozzle control signal line 25 Liquid source tank 26 Liquid source delivery gas pipe 27 Liquid source 28 Liquid source delivery gas supply part 29 Vaporization nozzle operation control part 31 Heater 61 Vacuum exhaust pipe 62 Vacuum exhaust valve 63 Exhaust pipe 81 Gas supply pipe 82 Gas supply valve 91 Wafer handler 92 First gate valve for spare room 93 Second gate valve for spare room 101 First pipe for wall temperature control 102 Second pipe for wall temperature control 201 Acoustic sensor 202 Signal line 203 signal processing section 204 signal processing section output line 210 conduction section C 210a Conduction sensor first electrode 210b Conduction sensor second electrode 210c Conduction sensor insulator 220 Heat conduction sensor 220a Heat conduction sensor first electrode 220b Heat conduction sensor second electrode 220c Heat conduction sensor heating wire 220d Heat conduction sensor insulator 230 Light emitting element 231 Light receiving element 232 Light emitting element signal line 233 Light receiving element signal line 300 Control nozzle part 301 Opening / closing mechanism part 302 Shutter 303 Substrate temperature measuring device 304 Cold trap 305 Baking device 306 Surface heating device 310 Vacuum pump 311 Manipulator 312 Substrate introduction device 320 Vacuum Pump # 321 Mass spectrometer 322 Ionizer 323 Gate valve a Shows the direction of flow of the liquid raw material.

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Masato Kunitomo 2326 Imai, Ome-shi, Tokyo Inside the Hitachi, Ltd.Device Development Center (72) Inventor Akira Okawa 2326 Imai, Ome-shi, Tokyo Hitachi, Ltd.Device Development Inside the center

Claims (20)

[Claims] At least a part of a liquid material to be a thin film is atomized by spraying in a space where the thin film is formed, and then vaporized, and supplied to the substrate surface to form a thin film for a semiconductor element on a substrate. In a semiconductor manufacturing apparatus that forms and manufactures a semiconductor, before starting film formation, it is required that a liquid material is filled to a position where it can be sprayed into a liquid material vaporization mechanism that atomizes and vaporizes the liquid material by spraying. An apparatus for manufacturing a semiconductor, comprising a liquid material filling confirmation mechanism for confirming. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the liquid material vaporizing mechanism includes a mechanism for intermittently opening and closing when supplying the liquid material, and supplying the liquid material.
The semiconductor manufacturing apparatus, wherein the liquid material filling confirmation mechanism includes a sensor for detecting an operation sound of the liquid material vaporization mechanism and a signal processing unit for processing a signal representing the operation sound output from the sensor. 3. The semiconductor manufacturing apparatus according to claim 1, wherein the liquid source vaporizing mechanism includes a mechanism for intermittently opening and closing when supplying the liquid source and supplying the liquid source.
The semiconductor manufacturing apparatus, wherein the liquid material filling confirmation mechanism includes a sensor for detecting vibration of the liquid material vaporizing mechanism and a signal processing unit for processing a signal representing the vibration output from the sensor. 4. The semiconductor manufacturing apparatus according to claim 1, wherein the liquid material filling confirmation mechanism detects a sensor for detecting electric conduction of the fluid in the liquid material vaporizing mechanism, and the electric conductivity output by the sensor. Characterized by comprising a signal processing unit for processing a signal representing the following. 5. The semiconductor manufacturing apparatus according to claim 1, wherein the liquid material filling confirmation mechanism detects a heat conduction of a fluid in the liquid material vaporization mechanism, and detects the heat output from the sensor. An apparatus for manufacturing a semiconductor, comprising a signal processing unit for processing a signal representing conductivity. 6. The semiconductor manufacturing apparatus according to claim 1, wherein the liquid source filling confirmation mechanism optically detects a liquid jet of the liquid source vaporizing mechanism, and detects a liquid jet output from the sensor. An apparatus for manufacturing a semiconductor, comprising a signal processing unit for processing a signal indicating presence. 7. The semiconductor manufacturing apparatus according to claim 1, wherein the liquid material filling confirmation mechanism optically detects a light transmittance of a fluid in the liquid material vaporization mechanism, and outputs the sensor. An apparatus for manufacturing a semiconductor, comprising: a signal processing unit that processes a signal representing the light transmittance of the fluid. 8. The semiconductor manufacturing apparatus according to claim 1, wherein the film forming mechanism is a chemical vapor deposition reaction. 9. The semiconductor manufacturing apparatus according to claim 1, wherein the liquid raw material is obtained by liquefying a solid or dissolving the solid in a solvent. 10. A thin film for a semiconductor element on a substrate by supplying at least a part of a liquid raw material to be a thin film, after atomizing by spraying in a space where the thin film is formed, and then supplying the liquid material to the substrate surface. In a semiconductor manufacturing method of forming and manufacturing a semiconductor, before starting film formation, a liquid raw material is filled to a position where it can be sprayed into a liquid raw material vaporizing mechanism in which the liquid raw material is atomized and vaporized by spraying. A method for manufacturing a semiconductor, comprising a step of checking. 11. The method for manufacturing a semiconductor according to claim 10, wherein the liquid source vaporizing mechanism includes a mechanism for intermittently opening and closing the liquid source to supply the liquid source, and starting the film formation. Before the operation, by detecting the operation sound of the liquid raw material vaporizing mechanism, it is confirmed that the liquid raw material is filled to a position where the liquid raw material can be sprayed into the liquid raw material vaporizing mechanism which atomizes and vaporizes the liquid raw material by spraying. A method for manufacturing a semiconductor, comprising: 12. The method for manufacturing a semiconductor according to claim 10, wherein the liquid source vaporizing mechanism includes a mechanism for intermittently opening and closing when supplying the liquid source and supplying the liquid source, and starting film formation. Before detecting the vibration of the liquid raw material vaporizing mechanism, it is confirmed that the liquid raw material is filled to a position where the liquid raw material can be sprayed into the liquid raw material vaporizing mechanism that atomizes and vaporizes the liquid raw material by spraying. A semiconductor manufacturing method characterized by the above-mentioned. 13. The method for manufacturing a semiconductor according to claim 10, wherein the liquid raw material is converted into a liquid raw material by detecting the electric conductivity of the fluid in the liquid raw material vaporizing mechanism before starting film formation. A method of manufacturing a semiconductor, comprising: confirming that a liquid material vaporization mechanism, which is atomized and vaporized by spraying, is filled to a position where it can be sprayed. 14. The method of manufacturing a semiconductor according to claim 10, wherein the liquid source is detected by detecting the conduction of heat of the fluid in the liquid source vaporizing mechanism before film formation is started.
A method for producing a semiconductor, comprising: confirming that a liquid material is charged to a position where it can be sprayed into a liquid material vaporization mechanism that atomizes and vaporizes the liquid material by spraying. 15. The method for manufacturing a semiconductor according to claim 10, wherein the liquid source is optically detected before the film formation is started, whereby the liquid source is vaporized.
A method for producing a semiconductor, comprising: confirming that a liquid material is charged to a position where it can be sprayed into a liquid material vaporization mechanism that atomizes and vaporizes the liquid material by spraying. 16. The method of manufacturing a semiconductor device according to claim 1, wherein before starting the film formation, the presence or absence of the liquid in the liquid source vaporizing mechanism is optically detected, so that the liquid source is replaced with the liquid source. A method of manufacturing a semiconductor, comprising: confirming that a liquid material vaporization mechanism, which is atomized and vaporized by spraying, is filled to a position where it can be sprayed. 17. The semiconductor manufacturing method according to claim 1, wherein the film forming mechanism is a chemical vapor deposition reaction. 18. The method for manufacturing a semiconductor according to claim 1, wherein the liquid raw material is obtained by liquefying a solid or dissolving the solid in a solvent. 19. A wafer manufactured by using the semiconductor manufacturing apparatus according to claim 1. 20. A semiconductor device manufactured by using the semiconductor manufacturing apparatus according to claim 1.