JPH112655A - High temperature testing device of semiconductor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To test in high temperature without using a constant temperature oven by connecting to an external testing device with a continuity pin introduced from a terminal of a socket and arranging a semiconductor to be tested on which a heater is pressed on a carrier connected to the terminal. SOLUTION: A terminal 42 connected to a semiconductor 10 to be tested is provided to a socket 40, at the lower part of the socket 40, a continuity pin 44 extended from the terminal 42 is provided, and in the middle space of the socket 40, a next testing part is embedded. The testing part is constituted of a carrier 60 having a pattern connected to the terminal 42, a fixing member 62 arranged on the upper surface of the carrier 60, a semiconductor to be tested 10 positioned and fixed with the fixing member 62 and a heater 30 arranged on it upper part. The semiconductor to be tested 10 and the heater 30 are pressed by way of a buffer 20 such as silicone sheet. With this constitution without using a constant temperature oven, heaters are individually provided, long lead wires are eliminated and stable performance tests become possible even if the semiconductor to be tested 10 is for high frequency.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high temperature endurance test apparatus used in a semiconductor production process.

[0002]

2. Description of the Related Art In a production process before shipment of a semiconductor, a high-temperature test such as a burn-in test is performed for screening, and a high-temperature test is conventionally performed in the high-temperature test. That is, a test is performed by putting a set of test jigs such as a socket for electrically supplying a semiconductor under test into a constant temperature bath at a constant temperature of about 80 to 150 ° C.

[0005] A test procedure for a semiconductor is as shown in FIG. That is, a plurality of semiconductor devices under test 10 mounted on a tray are tested at room temperature first, and after passing, the test is shifted to a high temperature test using a chamber. After the test is performed using a test jig composed of a test apparatus and the like, the test is performed by placing the test jig in a constant temperature bath in which the same test jig as that at normal temperature is set. In this high-temperature test, the connection between the jig to be tested inside the constant temperature chamber and the test control device outside the constant temperature chamber is made by a lead wire of several cm to several tens of cm longer than the lead wire used in the normal temperature test. I have.

[0004]

Since the heat capacity of the test jig is much larger than the heat capacity of the semiconductor under test, the test jig is set in a thermostat from the beginning. For equipment that supports high-frequency and highly integrated semiconductor testing such as recent hundreds of MHz, it is susceptible to high temperatures,
For this reason, the test jig inside the thermostat and the control device outside the thermostat are connected by the long lead wire as described above. However, in an electronic component operating at such a high frequency, the responsiveness of a signal is impaired due to the separation between the component under test and the control device, and an actual operation test cannot be performed. That is, by connecting the component under test to the control device via a long lead wire as in the above-described prior art, an electronic component operating at a high frequency cannot receive an accurate command from the control device. The frequency of electronic components in the above test is limited to 150 MHz,
Tests cannot be performed on semiconductors with frequencies from 0 MHz to several GHz.

At the same time, the heat capacity of the test jig is much larger than the heat capacity of the semiconductor under test, and it takes a considerable time for the temperature in the thermostatic chamber to reach a predetermined temperature as shown by a curve a in FIG. It is the evil of shortening. Also,
If the heater could be pressed against the semiconductor under test in a state where the semiconductor under test was set in a test jig at room temperature without using a constant temperature bath, the initial purpose could be achieved.However, the heat generation density of the conventional heater was extremely high. If the temperature is raised to a predetermined temperature because of the small size, the heater becomes large, and since the heat capacity of the heater itself is large, the heater has an overshoot characteristic as shown by a curve b in FIG. Therefore, such a test device has never been built.

SUMMARY OF THE INVENTION In view of the above problems, it is an object of the present invention to provide a simple test apparatus and to easily test a semiconductor having a high frequency of several hundred MHz to several GHz.

[0007]

In order to solve the above-mentioned problems, according to the present invention, there is provided a carrier having a terminal in a part of a socket and having a pattern connected to the terminal, and an external test device derived from the terminal. A conductive pin serving as a connection portion to a device, a semiconductor to be tested is arranged on the carrier, a heater is pressed against the semiconductor to be tested, and a high-temperature test is performed without using a thermostat. High temperature test equipment. As the semiconductor to be tested, a semiconductor element that does not require a carrier may be used.

[0008]

1 and 2 show a semiconductor high temperature test apparatus according to a first embodiment of the present invention. FIG. 1 is a perspective view showing the external appearance of the semiconductor device to be tested before being mounted on a test socket, and FIG. 2 is a side sectional view of the semiconductor device.

As shown in FIGS. 1 and 2, the socket 40 has terminals 42 electrically connected to the semiconductor.
In the lower part (outside), there is a conduction pin 44 having the terminal 42 extended.
Is provided. In the center space of the socket 40, a portion to be tested as described below is embedded. The portion to be tested has a carrier 60 having a pattern 64 connected to the terminal 42.
And a fixing member 62 disposed on the upper surface of the carrier 60, a semiconductor device under test 10 positioned and fixed by the fixing member 62, and a heater 30 disposed above the fixing member 62. A buffer material 20 formed by molding a silicon sheet or the like is disposed between the semiconductor device under test 30 and the semiconductor device under test 10 and the heater 30 through pressure.

In the above configuration, the socket 40 is formed by molding plastic or resin, and the carrier 60 is a support for the semiconductor under test 10 which also serves as a test board. In the present embodiment, an example is shown in which a semiconductor without a lead portion called a chip component is used as the semiconductor under test 10, and the pattern 64 on the carrier 60 is connected to the back surface of the semiconductor.

In the present embodiment, as described above, the main purpose is to minimize the air gap in the semiconductor under test 10 so that the heat of 0.3 m is used.
The heater 30 is attached via a buffer material 20 of about m. The heater 30 is configured as shown in FIG. 6, and takes in energy by the leads 32-32 to generate heat. The heater 30 is made as follows. First, a silicon nitride sheet is formed by a sheet forming machine, and a paste such as titanium nitride or tungsten is printed.
After this, a silicon nitride sheet is formed by lamination, lead wire opening processing and firing are performed, a brazing material such as silver brazing is inserted into the lead wire hole, a lead wire such as Kovar is inserted, and brazing is performed. Polished. It is desirable that the heater 30 formed in this way has a heat generation density of 39 W / cm 2 or more and a heat capacity smaller than the heat capacity of the semiconductor under test.

In the present embodiment, projections are provided on the lid 50 and a part of the fixing member 62 in consideration of heat insulation of the heater 30. This prevents the heat of the heater 30 and the semiconductor under test 10 from escaping to other parts, so that a stable heat load is applied to the semiconductor under test 10. The projection may be provided at another position even if the heater 30 and the semiconductor device under test 10 do not come into contact with the surrounding parts.

As shown in FIG. 6, when a temperature sensor such as a thermocouple 34 is attached to at least one of the heater 30 and the semiconductor under test 10, the following operation can be obtained. That is, according to such a configuration, the operation status of the heater 30 or the semiconductor under test 10 itself can be monitored, and as shown by the lower waveform in FIG. 10, when the heater 30 has an unnecessarily large amount of heat, energy is supplied. The heater 30 can be turned off and turned on if it runs short.
Fine temperature adjustment can be performed in accordance with ideal heater characteristics as shown by a curve 10 in FIG.

The conduction pin 44 is connected to an external test device (not shown), and an environment simulating the actual use is created from this test device. The semiconductor 10 is loaded.

Next, a second embodiment is shown in FIGS. FIGS. 3 and 4 show the semiconductor device under test shown in the first embodiment.
10 shows an example in which a relatively large semiconductor such as an LSI or MPU is used. That is, the pins 12 of the semiconductor under test 10 directly contact the pattern 64 without using a carrier, and the heater 30 is pressed under the semiconductor 10 under test via the buffer material 20. In this embodiment, the fixing member 62 is formed integrally with the socket 40. 3 and 4 are the same as or correspond to those described in the first embodiment, and the description thereof will be omitted.

FIG. 5 shows a third embodiment. In FIG. 5, a spring 70 is provided on the lower surface of the inner wall of the socket 40, the heater 30 is provided on a carrier 60 supported by the spring 70, and the semiconductor 10 to be tested is arranged on the upper portion via the buffer 20. . In the present embodiment, the semiconductor under test 10 is a radial component, and the side surface of the pin 12 is applied to the terminal 42. Further, unlike the above embodiment, the semiconductor under test 10 and the heater 30
Has been pressed against. In this embodiment, the carrier 60
Has no special wiring pattern 64 and only supports the heater 30, which is different from the carrier 64 described in the first embodiment. However, in other parts,
Those not described above are the same as or correspond to those described in the first embodiment, and thus description thereof is omitted.

In the first embodiment, a chip component is
In the third to third embodiments, the semiconductor device under test 10 of a flat package type or a radial type is used.
To the semiconductors shown in FIGS.

Further, in each of the above embodiments, the semiconductor under test 10 and the heater 30 are pressed against each other using the buffer material 20, but the semiconductor under test 10 and the heater 30 may be directly contacted. The positional relationship between the semiconductor under test 10 and the heater 30 may be such that the first embodiment and the second and third embodiments are interchangeable. That is, the heater 30 may be arranged at any position, either above or below the semiconductor under test 10. At this time, the heater 30 can be three-dimensionally formed according to the outer shape of the semiconductor device 10 to be tested. However, when inspecting a large number of semiconductors, it is preferable to use a flat heater.

In each of the above-described embodiments, the pressure contact holder may be brought into contact with the semiconductor device under test 10 on the side facing the heater 30 pressure contact surface, or a portion of the socket 40 may be contacted with the heater 30.
May be incorporated. The "press-contact holder" is included in the lid 50 shown in the first embodiment, and holds the press-contact between the semiconductor under test 10 and the heater 30. As described in the first embodiment, a protrusion is provided on the lid 50, the fixing member 62, or a part of the portion where the heater 30 and the semiconductor under test 10 are in contact with each other, and the heat insulating property of the heater 30 and the semiconductor under test 10 is provided. It may be improved.

[0020]

According to the above configuration, the heaters are respectively provided in the set jigs of the individual semiconductor devices to be tested without using a large-scale environmental test such as a thermostatic chamber which has been conventionally used. Long lead wires are not required between the semiconductor device under test and the semiconductor device under test. Therefore, a stable performance test can be performed even when the semiconductor under test has a high frequency.

In addition, since a heater is connected to the semiconductor device to be tested directly or via a buffer material instead of a constant temperature bath, the test time is several seconds, and at the same time, the number of devices during the test can be reduced to save labor. That is, it is possible to significantly reduce the test time and save energy.

In addition, by adding a sensor such as a thermocouple to a heater having a small heat capacity, the heater temperature can be monitored finely. By adjusting the heat conduction energy output to the semiconductor under test based on the monitoring result, An ideal temperature characteristic is obtained.

That is, by developing a heater having a small heat capacity and an extremely large heat generation density, an ideal characteristic shown by a curve c in FIG. 10 is obtained, and the temperature is raised to a predetermined temperature such as 100 ° C. in a few seconds. Thus, it is possible to significantly reduce the test time and save energy in the manufacturing process.

[Brief description of the drawings]

FIG. 1 shows a perspective view of a high temperature test apparatus of the present invention.

FIG. 2 shows a side sectional view of FIG.

FIG. 3 shows a perspective view of a test apparatus according to a second embodiment of the present invention.

FIG. 4 shows a side sectional view of FIG. 4;

FIG. 5 shows a third embodiment of the present invention.

FIG. 6 shows a front view and a side view of the heater.

FIG. 7 shows an embodiment of a semiconductor under test.

FIG. 8 shows an embodiment of a semiconductor under test.

FIG. 9 shows an embodiment of a semiconductor under test.

FIG. 10 shows a characteristic graph of a heater.

FIG. 11 shows a conventional test apparatus.

[Explanation of symbols]

 In the drawings, the same reference numerals indicate the same or corresponding parts. DESCRIPTION OF SYMBOLS 10 Semiconductor to be tested 12 Pin 20 Buffer material 30 Heater 32 Lead 34 Temperature sensor 40 Socket 42 Terminal 44 Conduction pin 50 Cover 60 Carrier 62 Fixing material 64 Pattern 70 Spring

Claims (11)

[Claims] An apparatus for testing a semiconductor at a high temperature using a heater which presses against a semiconductor under test. 2. The high temperature semiconductor test apparatus according to claim 1, wherein a heater having a heat capacity smaller than the heat capacity of the semiconductor under test is used. 3. The semiconductor high-temperature test apparatus according to claim 1, wherein a ceramic heater is used as the heater. 4. The semiconductor high-temperature test apparatus according to claim 3, wherein a ceramic heater based on silicon nitride is used. 5. The high temperature test apparatus for a semiconductor according to claim 1, wherein a heat conductive buffer sheet material is used for a surface to be pressed. 6. The semiconductor high-temperature test apparatus according to claim 1, wherein heat insulation and a pressure contact holder are brought into contact with a side of the semiconductor under test facing the heater pressure contact surface. 7. The semiconductor high-temperature test apparatus according to claim 1, wherein a heater is incorporated in the socket. 8. The semiconductor high-temperature test apparatus according to claim 1, wherein a temperature sensor is attached to a part of the heater. 9. The semiconductor high-temperature test apparatus according to claim 1, wherein a temperature sensor is attached to a part in contact with the semiconductor under test. 10. A carrier having a terminal in a part of a socket and having a pattern connected to the terminal, a conduction pin derived from the terminal and serving as a connection portion to an external test device,
A semiconductor high temperature test apparatus, wherein a semiconductor to be tested is arranged on the carrier, and a heater is pressed against the semiconductor to be tested to perform a high temperature test without using a thermostat. 11. A semiconductor device comprising: a semiconductor device to be tested having a terminal in a part of a socket and having a pin directly connected to the terminal; and a conduction pin derived from the terminal and serving as a connection portion to an external test apparatus, A high-temperature test apparatus for a semiconductor, characterized in that a heater is pressed against a semiconductor to be tested and a high-temperature test is performed without using a thermostat.