JPH1126414A - Manufacture of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To remove contamination between conductors or on a sidewall of a wiring, and prevent the re-attachment of the contamination in a cleaning step, after the wiring is formed on a semiconductor substrate. SOLUTION: A wafer is fixed in a chamber 7, pure water is fed from the upper side and sucked forcibly from the surrounding parts of the wafer, while the wafer is not rotate. After that, isopropyl alcohol is dropped and dried under reduced pressure. The pure water is fed from a nozzle 8 above the wafer, while holes 9 for sucking the pure water are provided around a stage 12 that fixes the wafer. The wafer is cleaned using a given quantity of the pure water in accordance with the suction force. After a cleaning step for a fixed time, the isopropyl alcohol of 3 to 5 cc is dropped through a nozzle 10. The pure water on the wafer is pushed to the outer boundary part of the wafer through the force caused by a difference of surface tension between the pure water and the alcohol, and thereby the inside of the chamber 7 is put under a reduced pressure. Then the face of the wafer is dried under reduced pressure and a drying step is finished in a given time.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning method for removing foreign substances in a semiconductor device manufacturing process after a semiconductor substrate wiring is formed.

[0002]

2. Description of the Related Art Residues of side wall protective films and foreign substances from equipment adhere to a wafer after wiring processing. FIG. 1 is a configuration diagram showing a processing apparatus for performing the above-described foreign matter removal.

[0003] In a constant exhaust chamber 1, a motor 6
The nozzle 3 above the wafer is rotated while rotating the wafer 2
To supply foreign water to remove foreign matter. In addition, a method has been selected in which a foreign substance that cannot be completely removed by pure water alone is removed by physical force by rotating the brush 4 and adding ultrasonic waves 5 to the pure water simultaneously with the supply of pure water. By using a physical force such as a brush or an ultrasonic wave, the foreign matter adhering to the upper part of the wiring and the wiring side wall is removed, and the wafer is finally dried by high-speed rotation to complete the foreign matter removal.

[0004]

As described above, in the conventional wiring formation process for semiconductor substrates, the residue of the sidewall protective film generated at the time of wiring processing is reduced by the removal of the wiring material and wiring by chemical removal of a chemical solution by an immersion method. Since the material immediately below is etched, it is becoming difficult to control the concentration and temperature. In addition, the foreign matter reattaches to the wafer during immersion, so that the foreign matter removing effect is reduced. In the foreign matter removing method using only pure water such as a scrubber, the supplied pure water cannot sufficiently enter between the wirings and the side walls of the wiring due to the rotation of the wafer, and the foreign matter between the wirings and the side wall cannot be sufficiently removed. In the foreign matter removing method using the physical force of the rotation of the brush or the application of the ultrasonic wave to the pure water, the wiring material is damaged or damaged. In addition, there is a problem that foreign matter is reattached due to wear of the brush or deterioration of the rotating device, which causes deterioration in reliability of wiring.

[0005]

According to the present invention, there is provided a method of manufacturing a semiconductor device for removing foreign matter after wiring of a semiconductor substrate is formed, wherein a wafer is fixed in a sealed chamber and the wafer is rotated without rotating the wafer. Pure water 8 supplied from above is forcibly sucked 9 from the outer periphery of the wafer. After the supply of pure water, isopropyl alcohol 10 is added dropwise, the water is replaced with alcohol, and the drying is completed under reduced pressure. This is a method for manufacturing a semiconductor device, characterized by using a physical removal device, and removing foreign matter without causing loss or damage of the wiring material and reattachment of foreign matter to the wafer.

[0006]

According to the present invention, pure water supplied onto a wafer is moved by forced suction from the outer periphery of the wafer without rotating the wafer in removing foreign matter after forming the wiring. And foreign matter between the wirings and on the side wall can sufficiently receive the transfer energy of pure water. That is, unlike the conventional physical action from above in the foreign matter existing between the wirings, a lateral force is generated, so that the force acting on the foreign matter is increased and the removal effect is improved. Further, since rotation by a brush and ultrasonic waves are not used, there is no loss or damage to the wiring material, and no reattachment of foreign matter occurs. After supplying pure water, isopropyl alcohol is added dropwise, the water is replaced with alcohol, and then dried under reduced pressure. Therefore, foreign substances on the wafer surface can be efficiently removed.

[0007]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. FIG. 2 is a configuration diagram showing a foreign matter removing device according to an embodiment of the present invention. Pure water is supplied from a nozzle 8 above the wafer, and holes for sucking the pure water are provided on all sides of a stage 12 for fixing the wafer. Wafer cleaning is performed with a pure water supply amount corresponding to the pure water suction capacity to remove foreign matter. After the cleaning for a certain period of time, 3 to 5 cc of isopropyl alcohol is dropped from the nozzle 10. Due to the difference in surface tension between pure water and alcohol, pure water on the wafer is extruded in the outer peripheral direction of the wafer, and during that time, the inside of the chamber is depressurized.

[0008]

According to the present invention, it is possible to reduce the damage to the wiring material and to prevent the foreign substances from re-adhering in removing foreign substances after forming the semiconductor substrate wiring.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of a conventional foreign matter removing device.

FIG. 2 is a configuration diagram showing an embodiment of a foreign matter removing device of the present invention.

[Explanation of symbols]

 1. Processing chamber 2. Wafer 3. Pure water supply line 4. Rotating brush 5. Ultrasonic pure water supply line 6. Rotating motor 7. Processing chamber 8. Pure water supply line 9. Pure water suction hole 10. Isopropyl alcohol supply line 11. Forced suction line 12. Wafer

Claims (1)

[Claims] 1. A method of manufacturing a semiconductor device, comprising: in a foreign matter removing step after forming a semiconductor substrate wiring, reducing damage to a wiring material and preventing reattachment of foreign matter.