JPH11261157A - Surface emitting type semiconductor laser device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a surface emitting type semiconductor laser element having a low threshold current and low operating voltage, and manufactureing method thereof. SOLUTION: The long-wavelength surface emitting laser 10 comprises an n-GaAs substrate 21, a DBR mirror 22, a light-emitting region of an embedded structure, a p-InGaAs contact layer 19, a p-side electrode 24, and a dielectric multilayer film mirror 27 with a window 25 embedded formed in this order and an n-side electrode 26 formed on the back side of the GaAs substrate 21. The DBR mirror 22 is a multilayer film of 28 cycles of n-GaAs/n-AlAs layers. The light-emitting region of the embedded structure comprises of an n-InP clad layer 13, a columnar mesa structure of a diameter of 10 μm, composed of a strained quantum well active layer 14 and a p-InP clad layer 15, an embedded layer composed of a p-InP layer 16 in which the columnar mesa structure is embedded and an n-InP layer 17, and a p-InP clad layer 18 of 0.8 μm thickness, formed on the mesa structure and an embedded layer.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface-emitting type semiconductor laser device and a method of manufacturing the same, and more particularly, to a surface-emitting type semiconductor laser device having a low threshold current and a low operating voltage, particularly a long wavelength band. The present invention relates to a surface-emitting type semiconductor laser device optimal as a surface-emitting laser and a method for manufacturing the same.

[0002]

2. Description of the Related Art A vertical cavity surface emitting semiconductor laser emits light in a direction perpendicular to a semiconductor substrate and is capable of two-dimensional parallel integration. Lasers, which have a wide range of applications in the field of new optoelectronics.

Here, a layer structure of a conventional long wavelength band surface emitting laser device manufactured by a direct bonding method will be described with reference to FIG. FIG. 7 is an element sectional view showing a layer structure of a conventional long wavelength band surface emitting laser. As shown in FIG. 7, a conventional long wavelength band surface emitting laser 40 has a thickness of about 100 .mu.m.
N-DBR sequentially formed on a GaAs substrate 41
Mirror 42, n-InP cladding layer 43, SCH-MQ
A stacked air structure including a W active layer 44 and a p-InP clad layer 45 and a p-DBR mirror 46, a p-GaAs contact layer 47, and a p-side electrode 48 formed on the stacked structure. Structure and p-side electrode 48
Covering the air post structure except the current injection surface of SiN
And an n-side electrode 50 formed in a ring shape on the back surface of the GaAs substrate 41. The n-DBR mirror 42 is an n-GaAs having a thickness of λ / 4n.
/ N-AlAs is a multilayer reflector consisting of 27 periods. Each of the p-DBR mirrors 46 has a thickness of λ / 4.
This is a multi-layer reflecting mirror having 27 periods of n p-GaAs / p-AlAs.

With reference to FIGS. 8 to 10, a method of manufacturing the above-described conventional long-wavelength surface emitting laser 40 will be described. 8 (a) to 8 (c), FIGS. 9 (d) and 9 (e), and FIG.
(F) and (g) are cross-sectional views showing the layer structure in each step when manufacturing the conventional long wavelength band surface emitting laser 40. (1) First, as shown in FIG.
On top, the GaInAs etching stop layer 52, the p-InP cladding layer 45, and the SCH-
The stacked structure 71 is formed by forming the MQW active layer 44 and the n-InP clad layer 43. (2) As shown in FIG. 8B, another substrate, n-GaAs
On the s-substrate 41, each thickness is λ by the MBE method.
The n-DBR mirror 42 composed of 27 periods of / 4n n-GaAs / n-AlAs is stacked to form a stacked structure 72. (3) Further, as shown in FIG.
The AlA is sequentially formed on the GaAs substrate 61 by the MBE method.
An s etching stop layer 62 and a p-GaAs contact layer 47 are formed, and a p-GaAs / p-Al layer having a thickness of λ / 4n is formed on the p-GaAs contact layer 47.
The stacked structure 73 is formed by stacking the p-DBR mirrors 46 each having 27 periods of As.

(4) Next, the n-InP of the laminated structure 71
The upper surface of the cladding layer 43 and the n-DB of the laminated structure 72
After treating the upper surface of the R mirror 42 with hydrofluoric acid, the n-InP is adjusted at room temperature and in the air while adjusting the cleavage surfaces.
The laminated structure 71 and the laminated structure 72 are brought into close contact with each other between the cladding layer 43 and the n-DBR mirror 42. Then
A heat treatment at a temperature of about 600 ° C. is applied to the laminated structure in a hydrogen atmosphere. Thereby, the laminated structure 71
The laminated structure 72 and the laminated structure 72 are bonded to each other and united to form a first combined laminated structure 74 as shown in FIG. 9D.

(5) Next, using the GaInAs etching stop layer 52 as an etching stop layer, the InP substrate 51 is removed from the first unitary laminated structure 74 with hydrochloric acid.
The GaInAs etching stop layer 52 is removed with a sulfuric acid-based etchant. Next, the upper surface of the p-InP clad layer 45 exposed by the etching, and the laminated structure 73
After treating the upper surfaces of the p-DBR mirrors 46 with hydrofluoric acid, respectively,
The united laminated structure 74 and the laminated structure 73 are brought into close contact with each other between the p-InP clad layer 45 and the p-DBR mirror 46 to form an adhered laminated structure. Next, a heat treatment at a temperature of about 600 ° C. is performed on the contact laminated structure in a hydrogen atmosphere. As a result, both laminated structures 73 and 74 are
As shown in (e), they are bonded to each other and united to form a second united laminated structure 75.

(6) Next, the AlAs etching stop layer 6
2 as an etching stop layer, and the second united laminated structure 7
The GaAs substrate 61 is removed with a mixed solution of ammonia and hydrogen peroxide, and the AlAs etching stop layer 6 is removed.
2 is removed with hydrofluoric acid. Next, on the p-GaAs contact layer 47 exposed by etching, FIG.
As shown in (f), a circular p-side electrode 48 having a diameter of about 10 μm made of a multilayer metal film of Ti / Pt / Au / Ni is formed by photolithography and a lift-off method.

(7) Next, the p-side electrode 4 formed in a circular shape
8 as an etching mask, chlorine-based RIBE method (Re
By active ion beam etching, the p-GaAs contact layer 47 and the p-DBR mirror 46 are selectively etched and removed, and as shown in FIG.
A cylindrical mesa including the As contact layer 47 and the p-DBR mirror 46 is formed. (8) Subsequently, an insulating film 49 made of SiN is formed on the surface (FIG. 7).
) Is formed, and only the mesa top is opened for current injection to form an opening. Further, the n-GaAs substrate 4
1 is polished to a thickness of about 100 μm, and then a ring-shaped n
When the side electrode 50 (see FIG. 7) is formed, the long wavelength band surface emitting laser 40 shown in FIG. 7 can be obtained.

The long-wavelength surface emitting laser device manufactured as described above has a DB formed of GaAs / AlAs on the upper and lower sides.
It has been confirmed that the provision of the R mirror improves the thermal conductivity and loss characteristics of the mirror and enables continuous operation at high temperatures.

[0010]

By the way, in an optical communication system, an applied voltage for driving a semiconductor laser is generally about 2 V or less, so it is necessary to keep the operating voltage of a surface emitting laser at 2 V or less. . Further, in the case of a laser array structure in which a large number of laser elements are integrated, power consumption is determined by the product of current and voltage, so that a high operating voltage is not preferable in reducing power consumption. Also,
The increase in the operating voltage not only increases the power consumption but also increases the generation of heat, so that the temperature of the laser element increases and the laser characteristics are adversely affected. However, the above-described conventional long-wavelength band surface emitting laser device has an adhesive interface between different kinds of laminated structures in two places due to the manufacturing process, so that the operation of the laser device will be described below. There was a problem that the voltage was high. That is, in the conventional long wavelength band surface emitting laser device, the operating voltage is 3 V or more due to the resistance component formed at the two bonding interfaces, especially the p-side bonding interface, and the heterospike in the p-DBR mirror. And it will be very high. Also, in the air post structure, if the emission diameter is reduced to reduce the threshold current, the cross-sectional area of the contact layer is also reduced, so that the contact resistance with the p-electrode is increased, thereby increasing the operating voltage. Is further increased, and it is difficult to reduce the threshold current.

It is an object of the present invention to provide a surface emitting semiconductor laser device having a low threshold current and low operating voltage, and a method for manufacturing the same.

[0012]

SUMMARY OF THE INVENTION The present inventor has reduced the light emitting diameter by (1) forming a mesa-type laminated structure including an active region with a current blocking layer instead of the air post structure. In order to reduce the threshold current, the cross-sectional area of the contact layer can be maintained. Furthermore,
(2) The present invention was completed by focusing on reducing the number of bonding interfaces between different types of laminated structures and reducing the bonding interface resistance.

In order to achieve the above object, a surface-emitting type semiconductor laser device according to the present invention comprises a GaAs substrate and at least a multilayer reflector made of GaAs / Al (Ga) As and an InP-based compound semiconductor layer. A post-shaped active layer buried with a current blocking layer made of a material, and a reflecting mirror made of a dielectric film. The multilayer reflector made of GaAs / Al (Ga) As refers to GaAs / AlAs or GaAs / AlGaAs.
s means a multilayer reflector. The active layer is an InP-based compound semiconductor layer, for example, the well layer is made of InGaAs.
By using a (strained) quantum well structure made of any one of P, InGaAs, AlGaInAs, and InAsP, an optimum laser device as a long wavelength band surface emitting laser device can be realized. For the dielectric film, for example, Si, ZnSe for the high refractive index material, and Al for the low refractive index material.
₂ O ₃ , MgF, TiO ₂ , SiO ₂ and SiN can be used.

A method according to the present invention for fabricating the above-described surface-emitting type semiconductor laser device (hereinafter referred to as a first invention method) has a double heterojunction structure in which an active layer is interposed on an InP substrate. Forming a laminated structure, processing at least the active layer of the laminated structure into a post shape by etching, then embedding the post-shaped active layer with a current blocking layer, and further removing the InP substrate; Forming a multilayer reflector made of GaAs / Al (Ga) As, removing the InP substrate,
The method is characterized by comprising a step of directly bonding the multilayer film reflecting mirror on the As substrate to the laminated structure by a bonding method, and a step of forming an upper reflecting mirror on the laminated structure. In the first to third invention methods, the direct bonding method refers to a method in which the surfaces of the epitaxial growth layers are brought into close contact with each other without using an adhesive, and heat treatment is performed to directly join the epitaxial growth layers. .

Another method according to the present invention for fabricating the above-mentioned surface emitting semiconductor laser device (hereinafter referred to as a second invention method) is a double heterojunction in which an active layer is interposed on an InP substrate. Forming a laminated structure having a structure, further removing the InP substrate, and forming a GaAs / A on the GaAs substrate.
forming a multi-layer reflecting mirror made of l (Ga) As, bonding the multi-layer reflecting mirror on the GaAs substrate to the laminated structure by a direct bonding method, and etching at least the active layer of the laminated structure And a step of embedding a post-shaped active layer with a current blocking layer, and a step of forming an upper reflector on the laminated structure.

Still another method according to the present invention for fabricating the above-described surface-emitting type semiconductor laser device (hereinafter referred to as a third invention method) is a double heterostructure in which an active layer is interposed on an InP substrate. Forming a laminated structure having a joint structure;
Forming a multilayer reflector formed of GaAs / Al (Ga) As on a GaAs substrate, and bonding the multilayer reflector on the GaAs substrate and the laminated structure on the InP substrate by a direct bonding method Forming a laminated structure, removing the InP substrate of the combined laminated structure, then processing at least the active layer of the laminated structure into a post by etching, and embedding the post-shaped active layer with a current blocking layer. Forming an upper reflecting mirror on the laminated structure.

[0017]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. Embodiment 1 This embodiment is an example of an embodiment in which the surface emitting semiconductor laser device according to the present invention is applied to a long wavelength band surface emitting laser. FIG. 1 is an element sectional view showing a layer structure of a long-wavelength surface emitting laser according to the present embodiment. As shown in FIG. 1, the long-wavelength band surface emitting laser 10 of this embodiment has a thickness of about 100 mm.
An n-GaAs substrate 21 having a thickness of 0.1 μm and a DBR mirror 22, a light emitting region having a buried structure, and a window 25 having a diameter of 15 μm are sequentially formed on the GaAs substrate 21. It has a 2 μm p-InGaAs contact layer 19, a p-side electrode 24, a dielectric multilayer mirror 27 filling the window 25, and an n-side electrode 26 formed on the back surface of the GaAs substrate 21.

The DBR mirror 22 is composed of n-GaAs / n-
A multilayer film comprising 28 periods of an AlAs layer, wherein n-G
The thicknesses of the aAs layer and the n-AlAs layer are λ /
4n (λ: oscillation wavelength, n: refractive index). For example, when the wavelength is 1.3 μm, the thicknesses of the GaAs layer and the AlAs layer are 95 nm and 111.3 nm, respectively. In addition, as the DBR mirror 22, n-GaAs / n-A
An lGaAs multilayer film can also be used. The light emitting region of the buried type structure includes an n-InP cladding layer 13 having a thickness of 1.0 μm, a strained quantum well active layer 14 having a total thickness of about 0.12 μm, and a p-InP cladding layer 15 having a thickness of 0.2 μm.
A cylindrical mesa structure having a diameter of 10 μm, a p-InP layer 16 having a thickness of 0.6 μm embedded with the cylindrical mesa structure and an n-InP layer 17 having a thickness of about 0.6 μm; And a 0.8 μm-thick p-InP clad layer 18 formed on the buried layer. The strained quantum well active layer 14 is made of InP and has seven well layers made of InGaAsP having a thickness of 5.5 nm, and eight well layers made of InGaAsP having a thickness of 10 nm.
It is composed of a plurality of barrier layers. Multilayer dielectric mirror 2
7, SiO ₂ / a-Si (amorphous silicon)
Is formed as a multilayer film having four periods.

Embodiment 1 Fabrication of Long Wavelength Band Surface Emitting Laser
With reference to FIGS. 2 and 3, the first invention method is applied,
A method for manufacturing the long wavelength band surface emitting laser 10 will be described. FIG.
(A) to (c) and FIGS. 3 (d) and (e)
FIG. 3 is a cross-sectional view illustrating a layer structure in each step when manufacturing the long wavelength band surface emitting laser 10. (1) First, MOCV is sequentially formed on the n-InP substrate 11.
According to the D method, an InGaAs etching stop layer 12 having a thickness of 0.2 μm and an n-InP cladding layer 1 having a thickness of 1.0 μm are formed.
3. A strained quantum well active layer 14 having a total thickness of 0.12 μm and a p-InP clad layer 15 having a total thickness of 0.2 μm are laminated. Next, as shown in FIG. 2A, a SiN _x film is formed on the p-InP clad layer 15 and patterned by photolithography and etching to form a SiN _x film etching mask M. Subsequently, the upper layers of the p-InP clad layer 15, the strained quantum well active layer 14, and the n-InP clad layer 13 are etched using the etching mask M to form a columnar mesa having a diameter of 10 μm. (2) Next, as shown in FIG. 2 (b), a p-InP layer 16 having a thickness of 0.6 μm and a thickness of 0.1 μm are formed as a buried layer of a columnar mesa by a selective growth method using an etching mask M. The n-InP layer 17 of 6 μm is regrown to bury the mesa. Subsequently, the SiN _x film etching mask was removed, and further, a 0.8 μm-thick InP clad layer 18 and a 0.2 μm-thick p-InGaAs contact layer 19 were formed on the entire surface, and FIG. As shown in (1), a laminated structure 20 is formed.

(3) On the other hand, as shown in FIG. 2 (c), n-GaAs / n
A stacked structure 23 is formed by stacking DBR mirrors 22 each having 28 periods of an AlAs layer; The thicknesses of the n-GaAs layer and the n-AlAs layer are respectively λ / 4n (λ:
Oscillation wavelength, n: refractive index). For example, a wavelength of 1.3 μm
In the case of m, the thicknesses of the GaAs layer and the AlAs layer are 95 nm and 111.3 nm, respectively.

(4) Next, as shown in FIG. 3D, a jig G having a smooth and flat surface is prepared, and the surface of the jig G and the p-InGaAs contact layer 19 of the laminated structure 20 are formed. The laminated structure 20 is disposed on the jig g so that the jig G is in contact with the jig G.
Glue on top. Jig G and electron wax W
At the time of the etching step described later, a material that can withstand the etching environment is used. The electron wax is an adhesive dissolved in an organic solvent and is, for example, a flat wax manufactured by Nikka Seiko under the trade name.

(5) Next, the InGaAs etching stopper layer 12 is used as an etching stopper layer, and n-I
The nP substrate 11 is removed by etching. Further, the InGaAs etching stop layer 12 is removed by etching with a sulfuric acid-based etchant. Next, n exposed by etching
After cleaning the surfaces of the InP cladding layer 13 and the DBR mirror 22 of the multilayer structure 23 with hydrofluoric acid, FIG.
As shown in (e), the laminated structure 20 and the laminated structure 23
Are adhered at room temperature and in the air to obtain an adhered laminated structure.

(6) Subsequently, the electron wax W is dissolved and removed with an organic solvent, the adhered laminated structure is removed from the jig G, and is placed in a hydrogen atmosphere for about 600 minutes for about 30 minutes.
Heat treatment at a temperature of ° C. Thereby, the contact laminated structure is completely bonded and united. (7) Next, a p-side electrode layer (Ti / Pt / Au) is deposited on the p-InGaAs contact layer 19, and is patterned as shown in FIG.
(Pt / Au) 24 is formed. Subsequently, using the p-side electrode 24 as an etching mask, a sulfuric acid-based etching solution is used.
The p-InGaAs contact layer 19 is removed by etching to expose the p-InP cladding layer 18 with a diameter 15.
Open the window 25 μm. Further, after the n-GaAs substrate 21 is polished to a thickness of about 100 μm, an n-side electrode 26 is formed. Finally, a mirror 27 having four periods of SiO ₂ / a-Si (amorphous silicon) is formed in the window 25 to obtain the long wavelength band surface emitting laser 10 shown in FIG.

In this embodiment, since the current blocking layers 16 and 17 are formed on both sides of the active layer 14 to narrow the active layer 14, a low threshold current can be obtained. In addition, since the current confinement structure can be formed using an existing technique established as a technique for manufacturing a long wavelength laser, the reliability is high. In addition, it is sufficient to bond the different kinds of laminated structures only once, and the current can be sufficiently spread at the direct bonding interface between the n-InP cladding layer 13 and the n-GaAs DBR mirror. The rise can be suppressed, and the operating voltage can be reduced.

Embodiment 2 This embodiment is an example of an embodiment in which the second invention method is applied to manufacture the long wavelength band surface emitting laser 10 of Embodiment 1. FIGS. 4 (a) to 4 (c) and FIGS. 5 (d) and 5 (e) show respective steps in manufacturing the long wavelength band surface emitting laser 10 of the first embodiment by the method of the second embodiment. FIG. 3 is a cross-sectional view showing a layer structure of FIG. (1) First, as shown in FIG. 4A, the n-InP substrate 11 is placed on the n-InP substrate 11 in the same manner as described in the first embodiment.
In order, the InGaAs etching stop layer 12, n-InP
Cladding layer 13, strained quantum well active layer 14, p-In
The P-cladding layer 15 is formed to form the laminated structure 30.

(2) Further, as shown in FIG. 4B, a DBR mirror 22 is laminated on an n-GaAs substrate 21 in the same manner as in the manufacturing method of the first embodiment, and a laminated structure 23 is formed.
To form

(3) Next, the p-InP of the laminated structure 30
With the clad layer 15 as the bonding surface, as shown in FIG. 4C, the laminated structure 30 is bonded to the jig G using electron wax in the same manner as in the first embodiment. Next, the n-InP substrate 11 is removed by etching with hydrochloric acid using the InGaAs etching stop layer 12 as an etching stop layer, and further, the InG is etched with a sulfuric acid-based etchant.
The aAs etching stop layer 12 is etched away.

(4) Next, n exposed by etching
-Surface cleaning of the InP cladding layer 13 and the DBR mirror 22 of the multilayer structure 23 with hydrofluoric acid, and then, using them as an adhesion surface, the multilayer structure 30 and the multilayer structure 23 are bonded at room temperature and in the air. Close contact is made to form an adhered laminated structure. Thereafter, the electron wax is dissolved with an organic solvent, the adhered laminated structure is removed from the jig, and a heat treatment is performed in a hydrogen atmosphere at a temperature of about 600 ° C. for 30 minutes.
As a result, the contact laminated structure is completely adhered, and becomes a united laminated structure 31 as shown in FIG.

(5) Next, an SiN _x film is formed, patterned by photolithography and etching to form an etching mask, and etched using the formed etching mask to form the n-InP cladding layer 13 and the strain quantum A column-shaped mesa having a diameter of 10 μm and including the well active layer 14 and the p-InP clad layer 15 is formed. Next, by a selective growth method using an etching mask, a p-InP layer 16 having a thickness of 0.6 μm and a thickness of 0.6
The n-InP layer 17 of about μm is regrown to bury the columnar mesa. Subsequently, after removing the SiN _x film etching mask, a 0.8 μm-thick p-InP cladding layer 18 and a 0.2 μm-thick p-InGaAs contact layer 19 are laminated on the entire surface, and FIG. Are obtained.

Next, a ring-shaped p-side electrode 24 is formed in the same manner as described in the first embodiment, and p-In
The window 25 is opened by etching the GAAsAs contact layer 19, and a mirror 27 is formed in an opening area of the window 25.
By forming the n-side electrode 26, the long wavelength band surface emitting laser 10 shown in FIG. 1 can be obtained.

Third Embodiment The third embodiment is an example of an embodiment in which the long-wavelength surface emitting laser 10 of the first embodiment is manufactured by applying the third invention method. FIGS. 6A and 6B are cross-sectional views showing the layer structure of each step when the long-wavelength surface emitting laser 10 of the first embodiment is manufactured by the method of the present embodiment. (1) First, as shown in FIG.
On the P substrate 11, a film thickness of 0.1.
2 μm InGaAs etching stop layer 12, thickness 0.
2 μm p-InP clad layer 15, total thickness 0.12 μm
m strained quantum well active layer 14 and 1.0 μm thick n−
The InP clad layer 13 is formed to form a laminated structure 32. Further, similarly to the first embodiment, n-GaAs
A DBR mirror 22 is stacked on a substrate 21 to form a stacked structure 23.

(2) Next, the DBR mirror 22 of the multilayer structure 23 and the n-InP cladding layer 13 of the multilayer structure 31
After pre-treatment, respectively, the cleavage faces are aligned at room temperature and in the air to bring the laminated structure 31 and the laminated structure 23 into close contact with each other, and further heat-treated at a temperature of about 600 ° C. for 30 minutes in a hydrogen atmosphere. By performing the above, as shown in FIG. 6B, a laminated structure 33 in which both are adhered is formed. (3) Next, the n-InP substrate 11 is formed with hydrochloric acid using the InGaAs etching stop layer 12 as an etching stop layer.
Is removed, and the InGaAs etching stopper layer 12 is removed with a sulfuric acid-based etchant. As a result, a laminated structure having the same structure as the laminated structure shown in FIG. Thereafter, by performing the respective steps in the same manner as in Embodiment 2, the long-wavelength band surface emitting laser device 10 can be obtained.

When the long-wavelength surface emitting laser 10 manufactured by the method of the first to third embodiments was tested, it was confirmed that the laser operates under the condition that the threshold current is 1 mA or less and the operating voltage is 2 V or less. Was.

[0034]

According to the present invention, at least a multi-layer reflector made of GaAs / Al (Ga) As and a post-like structure embedded in a current blocking layer made of an InP-based compound semiconductor layer are formed on a GaAs substrate. A low-threshold current of a surface-emitting type semiconductor laser device is realized by constructing a current confinement structure in which an active layer and a reflector made of a dielectric film are provided and both sides of the active layer are embedded with a current blocking layer. doing. According to the method of the present invention, the number of times of bonding between different kinds of laminated structures is reduced to one, the increase in operating voltage due to the resistance of the bonding interface is suppressed, and the current is sufficiently spread at the bonding interface between the cladding layer and the DBR mirror. Therefore, it is possible to suppress a rise in voltage due to the bonding interface, and to reduce the operating voltage.

[Brief description of the drawings]

FIG. 1 is an element cross-sectional view showing a layer structure of a long-wavelength band surface emitting laser according to a first embodiment.

FIGS. 2A to 2C are cross-sectional views each showing a layer structure in each process when manufacturing a long wavelength band surface emitting laser according to the first embodiment.

3 (d) and 3 (e) respectively show FIG. 2 (c)
FIG. 4 is a cross-sectional view showing a layer structure in each step when manufacturing the long wavelength band surface emitting laser according to the first embodiment, following FIG.

FIGS. 4A to 4C are cross-sectional views each showing a layer structure in each step when manufacturing a long-wavelength band surface emitting laser according to the first embodiment by the method according to the second embodiment; It is.

FIGS. 5 (d) and 5 (e) respectively show FIG. 4 (c).
FIG. 8 is a cross-sectional view illustrating a layer structure of each step when manufacturing the long wavelength band surface emitting laser according to the first embodiment by the method according to the second embodiment.

FIGS. 6A and 6B are cross-sectional views each showing a layer structure in each step when manufacturing the long-wavelength band surface emitting laser according to the first embodiment by the method according to the third embodiment. It is.

FIG. 7 is an element cross-sectional view showing a layer structure of a conventional long wavelength band surface emitting laser.

FIGS. 8A to 8C are cross-sectional views each showing a layer structure in each step when a conventional long wavelength band surface emitting laser is manufactured.

FIGS. 9 (d) and 9 (e) are respectively FIGS. 8 (c)
FIG. 4 is a cross-sectional view showing a layer structure in each step when a conventional long wavelength band surface emitting laser is manufactured, following FIG.

FIG. 10 (f) and FIG. 10 (g) correspond to FIG. 9 respectively.
It is sectional drawing which shows the layer structure of each process at the time of producing the conventional long wavelength band surface emitting laser following (e).

[Explanation of symbols]

 Reference Signs List 10 Long-wavelength surface emitting laser of first embodiment 11 n-InP substrate 12 InGaAs etching stop layer 13 n-InP cladding layer 14 strained quantum well active layer 15 p-InP cladding layer 16 p-InP buried layer 17 n-InP Buried layer 18 p-InP clad layer 19 p-InGaAs contact layer 20 laminated structure 21 n-GaAs substrate 22 DBR mirror 23 laminated structure 24 p-side electrode 25 window 26 n-side electrode 27 mirror 30, 31, 32, 33 laminated Structure 40 Conventional long wavelength band surface emitting laser element 41 n-GaAs substrate 42 n-DBR mirror 43 n-InP cladding layer 44 SCH-MQW active layer 45 p-InP cladding layer 46 p-DBR mirror 47 p-GaAs contact Layer 48 p-side electrode 49 SiN insulating film 50 n-side Pole 51 InP substrate 52 GaInAs etch stop layer 61 GaAs substrate 62 AlAs etch stop layer 71,72,73,74,75 stacked structure

Claims (4)

[Claims] 1. A post-type active layer buried on a GaAs substrate with at least a multilayer reflector made of GaAs / Al (Ga) As, a current blocking layer made of an InP-based compound semiconductor layer, and a dielectric. A surface-emitting type semiconductor laser device comprising: a reflecting mirror formed of a film. 2. A method for manufacturing a surface emitting semiconductor laser device according to claim 1, wherein a laminated structure having a double hetero junction structure with an active layer interposed is formed on an InP substrate. Processing at least the active layer of the body into a post shape by etching, then embedding the post-shaped active layer with a current blocking layer, and further removing the InP substrate; and forming GaAs / Al (Ga) As on the GaAs substrate. Forming a multilayer reflector; bonding the multilayer reflector on the GaAs substrate to the multilayer structure by a direct bonding method; and forming an upper reflector on the multilayer structure. A method for manufacturing a surface-emitting type semiconductor laser device, comprising: 3. The method for manufacturing a surface emitting semiconductor laser device according to claim 1, wherein a stacked structure having a double hetero junction structure with an active layer interposed is formed on an InP substrate. Removing the substrate, forming a multilayer reflector formed of GaAs / Al (Ga) As on the GaAs substrate, and bonding the multilayer reflector on the GaAs substrate and the laminated structure by a direct bonding method. Adhering, processing at least the active layer of the laminated structure into a post by etching, and then embedding the post-shaped active layer with a current blocking layer; and forming an upper reflector on the laminated structure. A method for manufacturing a surface-emitting type semiconductor laser device, comprising: 4. A method for manufacturing a surface emitting semiconductor laser device according to claim 1, wherein a step of forming a laminated structure having a double hetero junction structure with an active layer interposed on an InP substrate; Forming a multilayer reflector formed of GaAs / Al (Ga) As on a GaAs substrate; bonding the multilayer reflector on the GaAs substrate and the laminated structure on the InP substrate by a direct bonding method; Forming a laminated structure, removing the InP substrate of the combined laminated structure, processing at least the active layer of the laminated structure into a post shape by etching, and embedding the post-shaped active layer with a current blocking layer. Forming a top reflector on the laminated structure. A method for manufacturing a surface-emitting type semiconductor laser device, comprising: