JPH06314855A - Semiconductor light emitting element and its manufacture - Google Patents

Abstract

PURPOSE:To provide a highly reliable low-power-consumption semiconductor light emitting element capable of thresholdless operation by flattening it thereby facilitating the stacking integration with other optical function element, and enabling a microresonator to be formed easily, concerning a semiconductor light emitting element, and its manufacture. CONSTITUTION:A first conductivity type semiconductor multilayer reflector 2 is formed on a first conductivity type semiconductor substrate 1, and thereon a block layer 4 consisting of a semiconductor layer having a large band gap is formed, and an opening is formed by removing one part of this block layer 4, thus a resonator structure 13 is formed all over the surface of the block layer 4 having an opening. It is flattened by removing the section being made on the block layer 4 of this resonator structure, and thereon an opposite conductivity type of semiconductor multilayer film reflector 14 is formed, and an electrode 16 is formed on a light nonemission face, and an electrode 17 and a nonreflecting coating are formed on a light emission face. A resonator mesa is formed on the first conductivity type of multilayer film reflector 2, and then a block layer can be made around it.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device such as a surface emitting semiconductor laser having a microcavity and a method for manufacturing the same. In recent years, vertical cavity surface emitting lasers (Vertica) have been used as key devices for optical interconnection.
l Cavity Surface Emitting
Lasers) has made significant progress in research. Vertical cavity surface emitting lasers are: Very low threshold operation is possible due to the small resonator volume. It has the advantage that single mode operation is easy because the resonator length is short.

Furthermore, when the size of the resonator is on the order of the wavelength of light, the effect of microcavity becomes apparent. According to theory, the spontaneous emission light is enhanced in the microresonator, and the conversion efficiency from the spontaneous emission light to the laser mode is higher than that in the case of the bulk. Therefore, thresholdless operation can be expected.

[0003]

2. Description of the Related Art FIG. 6 is a structural diagram of a conventional typical vertical cavity surface emitting laser. In this figure, 41 is a first conductivity type semiconductor substrate, 42 is a first conductivity type semiconductor multilayer film reflecting mirror, 43 is a microresonator, 44 is a second conductivity type semiconductor multilayer film reflecting mirror, and 45 is a non-reflection coating film. is there.

In this conventional typical vertical cavity surface emitting laser, the first conductivity type semiconductor substrate 41 is formed on the first conductivity type semiconductor substrate 41.
Conductive type semiconductor multilayer film reflecting mirror 42, mesa type microresonator 4
3, the second conductive type semiconductor multilayer film reflecting mirror 44 is formed by stacking, and electrodes for supplying current to the first conductive type semiconductor substrate 41 and the second conductive type semiconductor multilayer film reflecting mirror 44 are formed. An antireflection coating film 45 is formed on the emission surface.

Since the vertical cavity surface emitting laser has a short cavity length and a large cavity loss, the first conductivity type semiconductor multilayer film reflecting mirror 42 and the second conductivity type semiconductor multilayer film reflecting mirror 4 are provided.
4 is required to be formed by alternately laminating semiconductors having a large band gap with a film thickness of λ / 4 so that the reflectance exceeds 99.9%.

[0006]

In this conventional vertical cavity surface emitting laser, in order to miniaturize the cavity,
The method of performing mesa processing as shown in FIG. 6 is most often used. However, since the surface of the element is not flat as it is, there is a disadvantage in considering the case of stacking and integrating with other optical functional elements. Further, a method of embedding the side surface of the mesa with a resin such as polyimide to flatten it is also used, but there is a difficulty in reliability. Since the present invention has a flat shape, it can be easily stacked and integrated with other optical functional elements, a microresonator can be easily formed, and thresholdless operation can be achieved with high reliability and low power consumption. An object is to provide a semiconductor laser.

[0007]

In a semiconductor light emitting device according to the present invention, a first conductivity type semiconductor multilayer film reflecting mirror, a semiconductor microresonator and an opposite conductivity type semiconductor multilayer film reflecting mirror are provided on a first conductivity type semiconductor substrate. And a contact layer are laminated, and the side surface of the semiconductor microresonator is covered with a semiconductor having a large band gap.

In the method for manufacturing a semiconductor light emitting device according to the present invention, a step of forming a first conductive type semiconductor multilayer film reflecting mirror on a first conductive type semiconductor substrate and a step of forming the first conductive type semiconductor multilayer film reflecting mirror. A step of forming a semiconductor layer having a large bandgap thereon, a step of etching away a part of the semiconductor layer having a large bandgap, and a semiconductor layer having a large bandgap including the part that is partially etched away Forming a resonator structure on the
A step of forming a corrosion-resistant mask directly on a region where a part of the semiconductor layer having a large bandgap on the resonator structure is removed by etching; and a part of the resonator structure where the corrosion-resistant mask is not formed is etched. A step of removing, a step of removing the mask, a step of forming an opposite conductivity type semiconductor multilayer film reflecting mirror on the semiconductor layer having the large band gap and the resonator structure, and an electrode on the light non-emission surface. The step of forming and the step of forming an antireflection coating and an electrode on the light emitting surface were adopted.

In this case, the thickness of the semiconductor layer having a large band gap and the thickness of the resonator structure are substantially equal to each other, and the resonator structure formed on the semiconductor layer having a large band gap is formed. By the step of removing by etching, the upper surface of the semiconductor layer having a large bandgap covering the upper surface of the resonator and the side surface thereof can be planarized.

Further, a step of forming a first conductive type semiconductor multilayer film reflecting mirror on the first conductive type semiconductor substrate, and a step of forming a resonator structure on the first conductive type semiconductor multilayer film reflecting mirror, A step of forming a corrosion-resistant mask on a portion of the resonator structure where the resonator is formed, and a portion of the resonator structure where the resonator is not formed using the corrosion-resistant mask is removed by etching to form a mesa of the resonator. A step of forming, a step of selectively growing a semiconductor layer having a large bandgap around the mesa of the resonator using the corrosion resistant mask to planarize the upper surface, and a step of removing the corrosion resistant mask, A step of forming a semiconductor multilayer film reflective mirror of opposite conductivity type on the semiconductor layer having the large band gap and the mesa of the resonator, a step of forming an electrode on the non-emission surface of light, and a non-reflection step on the emission surface of the light. Process of forming coating and electrodes It was adopted.

In these cases, a high resistance semiconductor can be used in place of the large bandgap semiconductor that covers the side surface of the resonator and its periphery.

[0012]

According to the present invention, since a microresonator can be easily formed, it is possible to realize a semiconductor light emitting device capable of thresholdless operation. Further, since the device has a flat shape, it can be easily laminated and integrated with other optical functional elements.
Furthermore, since the side surface of the microresonator is covered with a high-resistance semiconductor having a large band gap, it is not necessary to form a current constriction structure with an insulating film or the like, and the electrode forming process can be easily performed.

[0013]

EXAMPLES Examples of the present invention will be described below. (First Embodiment) FIG. 1 is an explanatory view of the configuration of a vertical cavity surface emitting laser according to the first embodiment. In this figure, 1 is an n-type semiconductor substrate, 2 is an n-type DBR mirror, 2 ₁ is an n-type first semiconductor layer, 2 ₂ is an n-type second semiconductor layer, 3 is an etching stop layer, and 4 is Semiconductor block layer, 6 clad layer, 7 barrier layer, 8 strained quantum well active layer, 9 barrier layer, 10 clad layer, 11 protective layer, 13 microcavity, 14 p-type DBR mirror , 14 ₁ is a p-type first semiconductor layer, 14 ₂ is a p-type second semiconductor layer, 15 is a contact layer, 16 is a Ti / Pt / Au electrode, 17 is AuGe /
The Au electrode, 18 is a non-reflective coating. Note that this code has a missing number because it matches the code of the second embodiment.

In the vertical cavity surface emitting laser of the first embodiment
On the n-type semiconductor substrate 1 made of n-type GaAs
The thickness is 1/4 of the oscillation wavelength and the impurity concentration is 2 × 10
¹⁸cm ^-3N-type first semiconductor layer 2 made of n-GaAs
₁N-type second semiconductor layer 2 composed of n-AlAs and₂Exchange
Forming n-type DBR mirror 2 with 28.5 pairs laminated on each other
In order to reduce device resistance, n-GaAs
N-type first semiconductor layer 2₁And consists of n-AlAs
n-type second semiconductor layer 2₂180 Å graded between
Layers have been inserted. Also, this n-type DBR mirror 2
On top of this, an etching layer made of GaAs with a thickness of 200Å is formed.
The top layer 3 is formed.

On a part of the n-type DBR mirror 2, a clad layer 6 made of AlGaAs having a thickness of 1347.5Å, a barrier layer 7 made of GaAs having a thickness of 100Å,
A strained quantum well active layer 8 made of InGaAs having a thickness of 80 Å, a barrier layer 9 made of GaAs having a thickness of 100 Å, and a clad layer 10 made of AlGaAs having a thickness of 1347.5 Å.
Is formed, and the periphery of the microresonator 13 is covered with the semiconductor block layer 4 made of non-doped InGaP having a relatively large band gap.

Further, the thickness is 1 / the oscillation wavelength.
4, the impurity concentration is 2 × 10¹⁸cm ^-3P-GaAs
P-type first semiconductor layer 14₁And p-AlAs
P-type second semiconductor layer 14₂23 pairs are laminated alternately
A p-type DBR mirror 14 is formed. in this case
This p-type DBR mirror also reduces the element resistance.
14 p-type first semiconductor layer 14 made of p-GaAs₁
P-type second semiconductor layer 14 composed of p-AlAs and₂of
A graded layer is inserted between them.

Then, on the p-type DBR mirror 14, a contact layer 15 made of GaAs having a thickness of 1500 Å and an impurity concentration of more than 1 × 10 ¹⁹ cm ^-3 is formed.
Ti / Pt / Au electrode 16 on the side and AuGe on the p side
/ Au electrode 17 is formed, and a non-reflection coating 18 made of SiN having a thickness of ¼ of the oscillation wavelength is formed on the light emitting end face.
Are formed.

As in this embodiment, the side surface of the microresonator 13 is covered with the semiconductor block layer 4 made of InGaP having a large hand gap, and the element resistance is reduced. No need. In this case, the semiconductor such as InGaP having a large hand gap that constitutes the block layer 4 can be replaced with a high resistance semiconductor such as oxygen-doped AlGaAs.

(Second Embodiment) FIGS. 2 and 3 are views for explaining the manufacturing process of the surface emitting laser according to the second embodiment.
(F) shows each process. In this figure, 1 is n
Type semiconductor substrate, 2 is an n type DBR mirror, 2 ₁ is an n type first semiconductor layer, 2 ₂ is an n type second semiconductor layer, 3 is an etching stop, 4 is a semiconductor block layer, and 5 is an etching mask. Layer, 6 is a cladding layer, 7 is a barrier layer, 8 is a strained quantum well active layer, 9 is a barrier layer, 10 is a cladding layer, 11
Is a protective layer, 12 is a resist pattern, 13 is a microresonator, 14 is a p-type DBR mirror, 14 ₁ is a p-type first semiconductor layer, 14 ₂ is a p-type second semiconductor layer, and 15 is a p-type It is a contact layer.

According to this manufacturing process explanatory diagram, the microresonator of the second embodiment is 0.98 μ in which a semiconductor layer is embedded.
A method for manufacturing an m-band single-wavelength cavity surface emitting laser will be described.

First Step (See FIG. 2A) On the n-type semiconductor substrate 1 made of n-type GaAs, the thickness is set.
Is 1/4 of the oscillation wavelength and the impurity concentration is 2 × 10¹⁸cm^-3
N-type first semiconductor layer 2 made of n-GaAs ₁And n-
N-type second semiconductor layer 2 made of AlAs₂Alternate 2
The n-type DBR mirror 2 is formed by stacking 8.5 pairs.

In order to reduce the element resistance, this n-type DB
A 180 Å graded layer is inserted between the n-type first semiconductor layer 2 _{1 made} of n-GaAs and the n-type second semiconductor layer 2 _{2 made} of n-AlAs of the R mirror 2. This is G
It is composed of a layer whose composition changes linearly from aAs to AlAs, or a superlattice.

On the n-type DBR mirror 2, a thickness of 2 is applied.
An etching stop layer 3 made of 00Å GaAs is formed. Then, a semiconductor block layer 4 made of non-doped InGaP having a thickness of 2975Å is further grown thereon. In this case, the semiconductor block layer 4 has the same thickness as the resonator 13 grown in a later step.

Second step (see FIG. 2B) A thickness of 2 is formed on the semiconductor block layer 4 formed in the first step.
An etching mask layer 5 made of GaAs of 00Å is formed, and a portion of the etching mask layer 5 where the microresonator 13 is to be formed is selectively wet-etched by using a hydrofluoric acid / hydrogen peroxide etchant to form an opening. Form. Using the etching mask layer 5 made of GaAs having this opening as a mask, the semiconductor block layer 4 made of InGaP is removed by etching using hydrochloric acid. At this time, the DBR mirror 2 is protected by the etching stop layer 3 formed on the DBR mirror 2. The planar shape of the opening for forming the microresonator 13 is arbitrary such as circular or square.

Third step (see FIGS. 2C and 3D) FIG. 3D is an enlarged view of one-dot chain line in FIG. 2C. On the semiconductor block layer 4 made of InGaP from which the portion where the resonator 13 is to be formed is removed by etching,
The clad layer 6 made of AlGaAs having a thickness of 1347.5Å, the barrier layer 7 made of GaAs having a thickness of 100Å, the strained quantum well active layer 8 made of InGaAs having a thickness of 80Å, the barrier layer 9 made of GaAs having a thickness of 100Å, the thickness of 134
A cladding layer 10 made of 7.5 Å AlGaAs and a protective layer 11 made of GaAs having a thickness of 200 Å are formed in this order. Next, a resist pattern 12 is formed on the protective layer 11 made of GaAs immediately above the semiconductor block layer 4 made of InGaP.

Fourth Step (See FIG. 3E) Using the resist pattern 12 formed in the third step as a mask, the protective layer 11 made of GaAs formed on the semiconductor block layer 4 made of InGaP, AlGaA
cladding layer 10 made of s, barrier layer 9 made of GaAs, strained quantum well active layer 8 made of InGaAs, GaA
The barrier layer 7 made of s and the clad layer 6 made of AlGaAs are etched and removed using a hydrofluoric acid / hydrogen peroxide etchant to form the microresonator 13.

Fifth step (see FIG. 3F) After the resist pattern 12 used in the fourth step is peeled off, the thickness is 1/4 of the oscillation wavelength and the impurity concentration is 2 × 10 ¹⁸ cm over the entire surface. ^-3 first p-type composed of p-GaAs
The semiconductor layer 14 ₁ and the p-type second semiconductor layer 14 ₂ made of p-AlAs are alternately laminated in 23 pairs to form the p-type DBR mirror 14. Also in this case, in order to reduce the element resistance, the p-type first semiconductor layer 14 _{1 made} of p-GaAs and the p-type DBR mirror 14 made of p-AlAs are used.
A graded layer is inserted between the second semiconductor layers 14 ₂ of the mold.

The growth rate on the semiconductor block layer 4 and the protective layer 1 made of GaAs remaining without being etched.
1, the growth rate on the clad layer 10 made of AlGaAs, the barrier layer 9 made of GaAs, the strained quantum well active layer 8 made of InGaAs, the barrier layer 7 made of GaAs, and the clad layer 6 made of AlGaAs are the same,
Flat p-type first semiconductor layer 14 _{1 made} of p-GaAs
It is possible to form the p-type DBR mirror 14 having a laminated structure of the p-type second semiconductor layer 14 _{2 made} of p-AlAs. On top of that, the thickness is 1500Å and the impurity concentration is 1 × 10.
The crystal structure of the device is completed by growing the p-type contact layer 15 made of GaAs having a ^size larger than ¹⁹ cm ⁻³ .

Thereafter, although not shown, a non-reflection coating made of SiN having a thickness of ¼ of the oscillation wavelength is formed on the light emitting end face, and a Ti / Pt / Au electrode and a p-side are provided on the p-side.
An AuGe / Au electrode is formed on the side to complete the device.

As in this embodiment, the microresonator 13 is I
Since it is covered with the semiconductor block layer 4 made of nGaP and the element resistance is reduced, the current constriction structure formed by the insulator formed in the conventional element is not provided.

(Third Embodiment) FIGS. 4 and 5 are views for explaining a manufacturing process of a surface emitting laser according to a third embodiment.
(F) shows each process. In this figure, 21
Is an n-type semiconductor substrate, 22 is an n-type DBR mirror, 22
₁ is an n-type first semiconductor layer, 22 ₂ is an n-type second semiconductor layer, 23 is a cladding layer, 24 is a barrier layer, 25 is a strained quantum well active layer, 26 is a barrier layer, 27 is a cladding layer, 28
Is a protective layer, 29 is an etching resistant film, 30 is a microresonator,
31 is a block layer, 32 is a p-type DBR mirror, 32 ₁
Is a p-type first semiconductor layer, 32 ₂ is a p-type second semiconductor layer,
33 is a p-type contact layer.

According to this manufacturing process explanatory diagram, the microresonator of the third embodiment is 0.98 μ in which a semiconductor layer is embedded.
A method for manufacturing an m-band single-wavelength cavity surface emitting laser will be described.

First Step (Refer to FIGS. 4A and 4B) FIG. 4B is an enlarged view of one-dot chain line in (A). On the n-type semiconductor substrate 21 made of n-type GaAs, the thickness is 1/4 of the oscillation wavelength and the impurity concentration is 2 × 10 5.
¹⁸ cm ⁻³ n-type first semiconductor layer 2 composed of n-GaAs
2 ₁ and n-type second semiconductor layer 22 _{2 made of} n-AlAs
N-type DBR mirror 22 by alternately stacking 28.5 pairs
To form.

On the n-type DBR mirror 22, a clad layer 2 made of AlGaAs having a thickness of 1347.5Å.
3. Barrier layer 24 made of GaAs having a thickness of 100Å and strained quantum well active layer 2 made of InGaAs having a thickness of 80Å
5, barrier layer 26 made of GaAs having a thickness of 100 Å, clad layer 2 made of AlGaAs having a thickness of 1347.5 Å
7. A protective layer 28 of GaAs having a thickness of 200 Å is formed in this order.

Second step (see FIG. 4C) An etching resistant film 29 made of SiO ₂ is formed on the protective layer 28, which is the uppermost layer of the laminate formed in the first step, at the portion where the microresonator 30 is to be formed. Pattern.

Third step (see FIG. 5D) Etching resistant film 2 made of SiO ₂ formed in the second step
RIE using 9 as a mask, a protective layer 28 made of GaAs, a clad layer 27 made of AlGaAs, G
a barrier layer 26 made of aAs, a strained quantum well active layer 25 made of InGaAs, a barrier layer 24 made of GaAs,
The clad layer 23 made of AlGaAs is etched to form the mesa of the microresonator 30.

Fourth Step (See FIG. 5E) On the n-type DBR mirror 22 having the mesa of the microresonator 30 formed in the third step, the difference in growth rate between SiO ₂ and GaAs is utilized. Then, a block layer 31 made of i-InGaP having a thickness of 2975Å is selectively grown. The series of steps up to here are carried out in a growth apparatus connected by a load lock so as not to come into contact with the outside air because AlGaAs is contained in the structure of the microresonator 30 and is easily oxidized.

Fifth step (see FIG. 5F) Etching resistant film 29 made of SiO ₂ used in the fourth step
After the removal, the p-type first semiconductor layer 32 _{1 made} of p-GaAs having a thickness of ¼ of the oscillation wavelength and the impurity concentration of 2 × 10 ¹⁸ cm ^{−3 and} the p-type first semiconductor layer 32 _{1 made} of p-AlAs. 23 pairs of two semiconductor layers 32 ₂ are alternately laminated to form a p-type DBR mirror 32. On top of that, GaAs with a thickness of 1500 Å and a p-type impurity concentration of more than 1 × 10 ¹⁹ cm ^-3 is formed.
A p-type contact layer 33 made of is grown to complete the crystal structure of the device.

Thereafter, although not shown, a non-reflection coating made of SiN having a thickness of ¼ of the oscillation wavelength is formed on the light emitting end face, and a Ti / Pt / Au electrode and a p-side are provided on the p-side.
An AuGe / Au electrode is formed on the side to complete the device.

Similar to the first embodiment, also in this embodiment, the microresonator 30 is made of InGaP as the blocking layer 3.
Since it is covered with 1, it is not necessary to provide a current constriction structure with an insulator around the microresonator 30.

According to each of the above-described embodiments, since the microresonator can be easily realized, a thresholdless operation semiconductor light emitting element can be realized, and the flat shape allows the stacked integration with other optical functional elements. It is easy to do, and because the microresonator is covered by a semiconductor with a large bandgap,
There is no need to provide a current constriction structure for the insulator, the electrode forming process is facilitated, and a complicated electrode structure is not required, leading to high reliability of the device.

[0042]

As described above, according to the present invention,
Since it is possible to easily form a microresonator, which has been difficult to realize in the past, it is possible to realize a low power consumption surface emitting semiconductor laser capable of thresholdless operation. And the device can be made compact, and since the microresonator is covered with a semiconductor having a large band gap, there is no need to form a current constriction structure made of an insulator. Since a complicated electrode structure is not required, the device can be made highly reliable, and it greatly contributes to the technical field such as interconnection using light.

[Brief description of drawings]

FIG. 1 is a diagram illustrating the configuration of a vertical cavity surface emitting laser according to a first embodiment.

FIG. 2 is an explanatory view (1) of the manufacturing process of the surface emitting laser according to the second embodiment, in which (A) to (C) show each process.

FIG. 3 is an explanatory view (2) of the manufacturing process of the surface emitting laser according to the second embodiment, in which (D) to (F) show each process.

FIG. 4 is an explanatory view (1) of the manufacturing process of the surface emitting laser according to the third embodiment, in which (A) to (C) show each process.

FIG. 5 is an explanatory view (2) of a manufacturing process of the surface emitting laser according to the third embodiment, in which (D) to (F) show each process.

FIG. 6 is a structural explanatory view of a conventional typical vertical cavity surface emitting laser.

[Explanation of symbols]

1 n-type semiconductor substrate 2 n-type DBR mirror 2 ₁ n-type first semiconductor layer 2 ₂ n-type second semiconductor layer 3 etching stop layer 4 semiconductor block layer 5 etching mask layer 6 clad layer 7 barrier layer 8 strain Quantum well active layer 9 Barrier layer 10 Cladding layer 11 Protective layer 12 Resist pattern 13 Microresonator 14 p-type DBR mirror 14 ₁ p-type first semiconductor layer 14 ₂ p-type second semiconductor layer 15 Contact layer 16 Ti / Pt / Au electrode 17 AuGe / Au electrode 18 Antireflection coating 21 n-type semiconductor substrate 22 n-type DBR mirror 22 ₁ n-type first semiconductor layer 22 ₂ n-type second semiconductor layer 23 clad layer 24 barrier layer 25 Strained quantum well active layer 26 Barrier layer 27 Clad layer 28 Protective layer 29 Etching resistant film 30 Microresonator 31 Block layer 3 2 p-type DBR mirror 32 ₁ p-type first semiconductor layer 32 ₂ p-type second semiconductor layer 33 p-type contact layer 41 first conductivity type semiconductor substrate 42 first conductivity type semiconductor multilayer film reflection mirror 43 micro resonance Container 44 second conductive type semiconductor multilayer film reflecting mirror 45 non-reflective coating film

Claims (6)

[Claims] 1. A first conductive type semiconductor multilayer film reflecting mirror, a semiconductor microresonator, an opposite conductive type semiconductor multilayer film reflecting mirror, and a contact layer are laminated on a first conductive type semiconductor substrate, and a side surface of the semiconductor microresonator. Is covered with a semiconductor having a large band gap. 2. The semiconductor light emitting device according to claim 1, wherein a high resistance semiconductor is used in place of a semiconductor having a large bandgap that covers the side surface of the resonator and the periphery thereof. 3. A step of forming a first conductive type semiconductor multilayer film reflective mirror on a first conductive type semiconductor substrate, and a semiconductor layer having a large bandgap on the first conductive type semiconductor multilayer film reflective mirror. And a step of etching away a part of the semiconductor layer having a large band gap, and a step of forming a resonator structure on the semiconductor layer having a large band gap including the part which is partially etched away. A step of forming an anticorrosion mask directly on a region where a part of the semiconductor layer having a large bandgap on the resonator structure is removed by etching, and a part of the resonator structure where the anticorrosion mask is not formed. A step of removing by etching, a step of removing the mask, and a step of forming a semiconductor multilayer film mirror of opposite conductivity type on the semiconductor layer having the large band gap and the resonator structure. And a step of forming an electrode on the light non-emission surface, and a step of forming an antireflection coating and an electrode on the light emission surface. 4. The resonator structure formed on the semiconductor layer having a large band gap is formed such that the thickness of the semiconductor layer having a large band gap and the thickness of the resonator structure are substantially equal to each other. 3. The method for manufacturing a semiconductor light emitting device according to claim 2, wherein the upper surface of the resonator and the upper surface of the semiconductor layer having a large band gap surrounding the resonator are flattened by the removing step. 5. A step of forming a first conductive type semiconductor multilayer film reflective mirror on a first conductive type semiconductor substrate, and a step of forming a resonator structure on the first conductive type semiconductor multilayer film reflective mirror. A step of forming a corrosion-resistant mask on a portion of the resonator structure where the resonator is formed, and a portion of the resonator structure where the resonator is not formed using the corrosion-resistant mask is removed by etching to form a mesa of the resonator. A step of forming, a step of selectively growing a semiconductor layer having a large bandgap around the mesa of the resonator using the corrosion resistant mask to planarize the upper surface, and a step of removing the corrosion resistant mask, A step of forming a semiconductor multilayer film reflective mirror of opposite conductivity type on the semiconductor layer having the large band gap and the mesa of the resonator, a step of forming an electrode on the non-emission surface of light, and a non-reflection step on the emission surface of the light. Includes coating and forming electrodes A method for manufacturing a semiconductor light emitting device, comprising: 6. A high resistance semiconductor is used in place of a semiconductor having a large bandgap that covers a side surface of a resonator and its periphery, and a high resistance semiconductor is used. Method for manufacturing semiconductor light emitting device.