JPH11260859A - Method for mounting semiconductor element - Google Patents

Method for mounting semiconductor element

Info

Publication number
JPH11260859A
JPH11260859A JP5773698A JP5773698A JPH11260859A JP H11260859 A JPH11260859 A JP H11260859A JP 5773698 A JP5773698 A JP 5773698A JP 5773698 A JP5773698 A JP 5773698A JP H11260859 A JPH11260859 A JP H11260859A
Authority
JP
Japan
Prior art keywords
weight
semiconductor element
mounting
substrate
predetermined
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5773698A
Other languages
Japanese (ja)
Inventor
Junichi Watanabe
潤一 渡辺
Yoshio Isogai
良雄 磯貝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5773698A priority Critical patent/JPH11260859A/en
Publication of JPH11260859A publication Critical patent/JPH11260859A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector

Landscapes

  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To attain accurate mounting of a semiconductor element even with respect to minute bumps. SOLUTION: This method is for mounting a semiconductor element for soldering a semiconductor element 1 on a substrate 2, by reflowing a solder bump 10 of the semiconductor element 1 under pressurizing and heating conditions. In this case, the solder bump 10 is reflowed under the pressurizing condition, only by a heavy bob 3 placed on the semiconductor element 1.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は半導体素子の実装方
法に関し、特に、高密度実装基板上での単体の半導体素
子交換等、局部的な加熱にてはんだバンプ接合を行うた
めの半導体素子の実装方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for mounting a semiconductor device, and more particularly, to a method for mounting a semiconductor device for performing solder bump bonding by local heating, such as replacing a single semiconductor device on a high-density mounting substrate. It is about the method.

【0002】現在、半導体素子の基板への実装にははん
だバンプ方式が多用されるが、修理工程(EC)では素
子リムーブ後の基板上の残りはんだの凹凸や素子単体の
バンプの不揃い等があり、これらの条件下でも確実に実
装可能な半導体素子の実装方法が求められる。
At present, a solder bump method is often used for mounting a semiconductor element on a substrate. However, in a repairing process (EC), there are irregularities of remaining solder on the substrate after the element is removed, and unevenness of bumps of the element itself. Therefore, there is a need for a method of mounting a semiconductor element that can be reliably mounted under these conditions.

【0003】[0003]

【従来の技術】従来の修理工程における半導体素子の実
装方法としては図8に示すものが採用されている。この
従来例において、基板2上に載置された半導体素子1上
にツール7が載置され、該ツール7を介して加圧体70
が配置される。加圧体70は図示しない溶接電源から電
流の供給を受けて発熱する発熱部70aを有し、高さ制
御されることにより半導体素子1を所定荷重で基板2に
押し付けながらはんだバンプ10をリフローする。
2. Description of the Related Art As a conventional method for mounting a semiconductor element in a repair process, the method shown in FIG. 8 is employed. In this conventional example, a tool 7 is mounted on a semiconductor element 1 mounted on a substrate 2, and a pressing body 70 is
Is arranged. The pressurizing member 70 has a heat generating portion 70a that generates heat by receiving a current from a welding power supply (not shown), and reflows the solder bump 10 while pressing the semiconductor element 1 against the substrate 2 with a predetermined load by controlling the height. .

【0004】[0004]

【発明が解決しようとする課題】しかし、上述した従来
例には以下の欠点がある。すなわち、はんだリフロー時
に半導体素子1は加圧体70により所定荷重で押し付け
られているが、加圧体70は発熱部70aへの通電によ
り微振動するために、微小なはんだバンプ10を使用し
て基板2への実装を行うと、実装位置決めが困難にな
る。
However, the above-mentioned prior art has the following disadvantages. That is, the semiconductor element 1 is pressed with a predetermined load by the pressurizing body 70 during the solder reflow. Mounting on the board 2 makes mounting positioning difficult.

【0005】本発明は、以上の欠点を解消すべくなされ
たもので、微小バンプに対しても正確な実装が可能な半
導体素子の実装方法の提供を目的とする。
An object of the present invention is to solve the above-mentioned drawbacks, and an object of the present invention is to provide a method of mounting a semiconductor element capable of accurately mounting even a minute bump.

【0006】[0006]

【課題を解決するための手段】本発明によれば上記目的
は、加圧、加熱条件下で半導体素子1のはんだバンプ1
0をリフローして基板2上に半導体素子1をはんだ付け
する半導体素子の実装方法であって、半導体素子1上に
載置された重錘3のみによる加圧条件下ではんだバンプ
10をリフローする半導体素子の実装方法を提供するこ
とにより達成される。
According to the present invention, the object is to provide a semiconductor device having a solder bump under pressure and heating conditions.
This is a method of mounting a semiconductor element in which the semiconductor element 1 is soldered on the substrate 2 by reflowing the solder bumps 10, wherein the solder bumps 10 are reflowed under the pressurized condition only by the weight 3 placed on the semiconductor element 1. This is achieved by providing a method for mounting a semiconductor device.

【0007】半導体素子1の基板対向面にははんだバン
プ10が形成されており、半導体素子1ははんだバンプ
10を所定のパッドに対応させて基板2上に保持され
る。半導体素子1の実装に際してまず、吸着ヘッド5等
の適宜の搬送手段を利用して重錘3を半導体素子1上に
載置する。搬送手段は重錘3を載置した後、必要に応じ
所定荷重で半導体素子1を押圧してはんだバンプ10に
所定の潰し変形を与えた後、退避位置に退避する。
[0007] Solder bumps 10 are formed on the substrate facing surface of the semiconductor element 1, and the semiconductor element 1 is held on the substrate 2 with the solder bumps 10 corresponding to predetermined pads. When mounting the semiconductor element 1, first, the weight 3 is placed on the semiconductor element 1 by using an appropriate transport means such as the suction head 5. After the weight 3 has been placed, the transfer means presses the semiconductor element 1 with a predetermined load as necessary to apply a predetermined crushing deformation to the solder bump 10 and then retreats to the retreat position.

【0008】はんだバンプ10のリフローは上記重錘3
の重量により押さえつけられながら、すなわち、重錘3
のみによる加圧条件下で行われるために、従来例のよう
に微振動による位置ずれ等が生じることはない。
[0008] The reflow of the solder bumps 10
While being held down by the weight of
Since it is performed under the pressurizing condition only by the pressure, there is no displacement or the like due to the minute vibration unlike the conventional example.

【0009】はんだバンプ10をリフローするための熱
量の供給には種々の手段を採用することができ、例えば
近赤外線照射、あるいは不活性ホットガス等の間接加熱
手段6による間接加熱を利用できる。また、重錘3を予
め加熱しておいた場合には、間接加熱手段6を使用する
ことなく、重錘3の輻射熱ではんだバンプ10をリフロ
ーすることができる。重錘3の加熱は、装置内の適宜個
所に設けられた重錘加熱手段4において実施する以外
に、重錘加熱手段4を有する搬送手段で行うこともでき
る。
Various means can be used to supply the heat for reflowing the solder bumps 10. For example, near-infrared irradiation or indirect heating by an indirect heating means 6 such as an inert hot gas can be used. When the weight 3 has been heated in advance, the solder bumps 10 can be reflowed by the radiant heat of the weight 3 without using the indirect heating means 6. The heating of the weight 3 can be carried out by a conveying means having the weight heating means 4 in addition to the heating by the weight heating means 4 provided at an appropriate position in the apparatus.

【0010】請求項2に係る発明は、加圧、加熱条件下
で半導体素子1のはんだバンプ10をリフローして基板
2上に半導体素子1をはんだ付けする半導体素子の実装
方法であって、上面に所定重量の重錘3を載置した半導
体素子1を基板2上の所定位置に載置し、前記重錘3の
みによる加圧条件下ではんだバンプ10をリフローする
半導体素子の実装方法である。
According to a second aspect of the present invention, there is provided a method of mounting a semiconductor device, comprising reflowing solder bumps 10 of a semiconductor device 1 under conditions of pressure and heating to solder the semiconductor device 1 onto a substrate 2. A semiconductor element 1 on which a weight 3 having a predetermined weight is mounted is placed at a predetermined position on a substrate 2 and a solder bump 10 is reflowed under a pressurized condition using only the weight 3. .

【0011】本発明は基板2上に半導体素子1が予め位
置決めされていない場合に有効な実装方法を提供するも
ので、所定位置に待機する半導体素子1はその上部に重
錘3が載せられた状態で基板2上の所定位置に搬送され
る。基板2上への位置決めを行う必要上、搬送手段には
吸着ヘッド5が利用するのが望ましい。積層状態にある
重錘3と半導体素子1の吸着ヘッド5により吸着を可能
にするために、重錘3には複数の貫通孔が穿孔される。
必要に応じ、搬送手段は半導体素子1を基板2上の所定
位置に位置決めした後、所定荷重で半導体素子1を押圧
してはんだバンプ10に所定の潰し変形を与える。はん
だバンプ10のリフローのための熱源は、上記請求項1
に係る発明で説明した手段がそのまま流用できる。
The present invention provides an effective mounting method when the semiconductor element 1 is not positioned on the substrate 2 in advance. The weight 3 is mounted on the semiconductor element 1 which stands by at a predetermined position. In this state, it is transported to a predetermined position on the substrate 2. Since it is necessary to perform positioning on the substrate 2, it is desirable to use the suction head 5 as the transporting means. A plurality of through holes are drilled in the weight 3 so that the weight 3 in the stacked state and the suction head 5 of the semiconductor element 1 can be suctioned.
If necessary, the transfer means positions the semiconductor element 1 at a predetermined position on the substrate 2 and then presses the semiconductor element 1 with a predetermined load to apply a predetermined crushing deformation to the solder bump 10. 2. The heat source for reflowing the solder bumps 10 according to claim 1.
The means described in the invention according to (1) can be used as it is.

【0012】請求項3に係る発明は、所定重量の重錘3
と、重錘加熱手段4により加熱された重錘3を基板2上
に保持された半導体素子1の上面に搬送し、搬送後に搬
送位置から退避する吸着ヘッド5とを有し、重錘3によ
り半導体素子1を加圧しながら重錘3の輻射熱で半導体
素子1のはんだバンプ10をリフローする半導体素子の
実装装置である。
According to a third aspect of the present invention, there is provided a weight 3 having a predetermined weight.
And a suction head 5 that conveys the weight 3 heated by the weight heating means 4 to the upper surface of the semiconductor element 1 held on the substrate 2 and retracts from the conveyance position after the conveyance. This is a semiconductor device mounting apparatus that reflows the solder bumps 10 of the semiconductor device 1 by radiant heat of the weight 3 while pressing the semiconductor device 1.

【0013】本発明において所定重量を有する重錘3は
重錘加熱手段4により所定温度に加熱され、吸着ヘッド
5により基板2上の半導体素子1上に搬送される。重錘
加熱手段4は装置内の適宜個所に設けることも、吸着ヘ
ッド5自体に設けることもできる。吸着ヘッド5は重錘
3を半導体素子1上に載置した後、必要に応じ所定荷重
で半導体素子1を押圧してはんだバンプ10に所定の潰
し変形を与えた後、退避位置に退避する。
In the present invention, the weight 3 having a predetermined weight is heated to a predetermined temperature by the weight heating means 4 and is conveyed by the suction head 5 onto the semiconductor element 1 on the substrate 2. The weight heating means 4 can be provided at an appropriate place in the apparatus, or can be provided on the suction head 5 itself. After placing the weight 3 on the semiconductor element 1, the suction head 5 presses the semiconductor element 1 with a predetermined load as necessary to give a predetermined crushing deformation to the solder bump 10, and then retracts to the retracted position.

【0014】はんだバンプ10のリフローは上記重錘3
の重量により押さえつけられながら、すなわち、重錘3
のみによる加圧条件下で行われるために、従来例のよう
に微振動による位置ずれ等が生じることはない。
The reflow of the solder bump 10 depends on the weight 3
While being held down by the weight of
Since it is performed under the pressurizing condition only by the pressure, there is no displacement or the like due to the minute vibration unlike the conventional example.

【0015】基板2上に半導体素子1が予め位置決めさ
れていない場合には、請求項4に係る発明のように、所
定重量の重錘3と、上面に重錘3が積層された半導体素
子1を基板2上の所定位置に搬送し、搬送後に搬送位置
から退避する吸着ヘッド5と、重錘3、および半導体素
子1を加熱し、重錘3による加圧条件下ではんだバンプ
10をリフローする間接加熱手段6とを有する半導体素
子の実装装置を構成することができる。
In the case where the semiconductor element 1 is not positioned on the substrate 2 in advance, the weight 3 having a predetermined weight and the weight 3 are stacked on the upper surface as in the invention according to claim 4. Is transported to a predetermined position on the substrate 2, the suction head 5 that retreats from the transport position after the transport, the weight 3, and the semiconductor element 1 are heated, and the solder bumps 10 are reflowed under the pressure of the weight 3. A semiconductor device mounting apparatus having the indirect heating means 6 can be configured.

【0016】はんだバンプ10のリフローのための熱源
には、請求項4に係る発明のように近赤外線照射装置、
あるいは不活性ホットガス装置等の間接加熱手段6を使
用する以外に、重錘3の輻射熱を利用することができ、
この場合、請求項5に係る発明のように、所定重量の重
錘3と、上面に重錘3が積層された半導体素子1を基板
2上の所定位置に搬送し、搬送後に搬送位置から退避す
る吸着ヘッド5とを有し、前記吸着ヘッド5により加熱
された重錘3により半導体素子1を加圧しながら重錘3
の輻射熱で半導体素子1のはんだバンプ10をリフロー
する半導体素子の実装装置を構成することができる。
The heat source for reflowing the solder bumps 10 includes a near-infrared irradiating device as in the invention according to claim 4,
Alternatively, in addition to using the indirect heating means 6 such as an inert hot gas device, the radiant heat of the weight 3 can be used,
In this case, as in the invention according to claim 5, the weight 3 having the predetermined weight and the semiconductor element 1 having the weight 3 laminated on the upper surface are transported to a predetermined position on the substrate 2, and after the transport, are retracted from the transport position. And a weight 3 heated while being pressed by the weight 3 heated by the suction head 5.
The semiconductor device mounting apparatus that reflows the solder bumps 10 of the semiconductor device 1 with the radiant heat of the semiconductor device 1 can be configured.

【0017】[0017]

【発明の実施の形態】図2に本発明の実施の形態に係る
半導体実装装置を示す。半導体実装装置は、不活性ガス
供給装置80により不活性ガス雰囲気とされた装置筐体
8内に収容されるX−Yテーブル81を備え、該X−Y
テーブル81上にホットプレート82が保持される。ホ
ットプレート82は内部に図示しない熱源を有し、表面
を余熱温度に、重錘収容部(重錘加熱手段4)を所定の
加熱温度に保持する。
FIG. 2 shows a semiconductor mounting apparatus according to an embodiment of the present invention. The semiconductor mounting device includes an XY table 81 housed in the device housing 8 in an inert gas atmosphere by an inert gas supply device 80.
A hot plate 82 is held on the table 81. The hot plate 82 has a heat source (not shown) inside, and keeps the surface at a preheating temperature and the weight storage section (weight heating means 4) at a predetermined heating temperature.

【0018】重錘3は所定の重量を有し、重錘収容部4
に収容される。重錘3の重量は、例えば後述する半導体
素子1のはんだバンプ10が溶融した際の表面張力によ
る半導体素子1の浮き上がりを防止し、半導体素子1を
適宜高さに維持することができ、かつ、溶融ハンダを潰
しすぎてパターン接触等が生じない重さに設定される。
また、ホットプレート82の加熱温度は、後述するよう
に、重錘3がはんだバンプ10を溶融させるに十分な輻
射熱を供給することができる温度に設定される。
The weight 3 has a predetermined weight, and the weight accommodation portion 4
To be housed. For example, the weight of the weight 3 can prevent the semiconductor element 1 from rising due to surface tension when a solder bump 10 of the semiconductor element 1 described later is melted, and can maintain the semiconductor element 1 at an appropriate height. The weight is set so that the molten solder is not crushed too much to cause pattern contact or the like.
The heating temperature of the hot plate 82 is set to a temperature at which the weight 3 can supply radiant heat sufficient to melt the solder bumps 10 as described later.

【0019】実装対象の半導体素子1を載せた基板2は
上記ホットプレートの表面上に載置されて所定の温度に
予熱される。半導体素子1は基板2上の所定位置に予め
位置決めされて熱圧着等の手段により仮固定される。5
は吸着ヘッドであり、高さ方向、および回転方向に変位
させることができる。
The substrate 2 on which the semiconductor element 1 to be mounted is mounted is mounted on the surface of the hot plate and preheated to a predetermined temperature. The semiconductor element 1 is previously positioned at a predetermined position on the substrate 2 and is temporarily fixed by means such as thermocompression bonding. 5
Denotes a suction head, which can be displaced in a height direction and a rotation direction.

【0020】本実施の形態に係る半導体実装装置による
実装方法を説明する。まず、吸着ヘッド5を高さ方向に
駆動して重錘収容部4内の加熱された重錘3の上面を吸
着して持ち上げた後、X−Yテーブル81を駆動して対
象半導体素子1を吸着ヘッド5の直下に位置させる(図
2(b)参照)。この後、軸部を回転させながら重錘3
を半導体素子1の上面に載置し、さらに所定荷重で半導
体素子1を押し付ける。吸着ヘッド5による押圧によ
り、半導体素子1の裏面に固定されているはんだバンプ
10は所定量潰れ変形する(図1(a)、(b)参
照)。
A mounting method using the semiconductor mounting apparatus according to the present embodiment will be described. First, after the suction head 5 is driven in the height direction to suck and lift the upper surface of the heated weight 3 in the weight storage unit 4, the XY table 81 is driven to move the target semiconductor element 1. It is located directly below the suction head 5 (see FIG. 2B). Then, while rotating the shaft, the weight 3
Is placed on the upper surface of the semiconductor element 1, and the semiconductor element 1 is further pressed with a predetermined load. The solder bump 10 fixed to the back surface of the semiconductor element 1 is crushed and deformed by a predetermined amount due to the pressing by the suction head 5 (see FIGS. 1A and 1B).

【0021】はんだバンプ10に所定の潰し変形を付与
した後、吸着ヘッド5は図1(c)に示すように再び上
方に引き上げられ、半導体素子1の押圧位置から退避す
る。この状態で放置しておくと、はんだバンプ10は重
錘3の輻射熱により溶融し、この後、再び吸着ヘッド5
を駆動して半導体素子1上に載置された重錘3を吸着し
て重錘収容部4に搬送して実装作業が終了する。
After a predetermined crushing deformation is applied to the solder bumps 10, the suction head 5 is pulled up again as shown in FIG. 1C, and retreats from the pressing position of the semiconductor element 1. If left in this state, the solder bumps 10 are melted by the radiant heat of the weight 3, and thereafter, the suction head 5
Is driven to suck the weight 3 placed on the semiconductor element 1 and transported to the weight receiving section 4 to complete the mounting operation.

【0022】なお、以上においては、装置筐体8内に重
錘加熱手段4となる重錘収容部を配置し、重錘3は重錘
加熱手段4において所定温度に加熱するように構成され
ているが、吸着ヘッド5に加熱手段を設けることによ
り、重錘3を加熱することもできる。
In the above description, the weight housing portion serving as the weight heating means 4 is disposed in the apparatus housing 8, and the weight 3 is configured to be heated to a predetermined temperature by the weight heating means 4. However, the weight 3 can also be heated by providing the suction head 5 with a heating means.

【0023】図4に本実施の形態を変形例を示す。な
お、以下の説明において上述した実施の形態と本質的に
同一の構成要素は図中に同一符号を付して説明を省略す
る。この変形例において装置筐体8内には近赤外線照射
装置(間接加熱手段6)が配置される。図4(b)に示
すように、ホットプレート82で予熱された重錘3を半
導体素子1の上面に載せた後、X−Yテーブル81が駆
動されて基板2を近赤外線照射装置近傍に搬送する。図
3に示すように、吸着ヘッド5は重錘3を半導体素子1
上に載置する際に所定荷重で重錘3を押し付け、半導体
素子1のはんだバンプ10に所定量の潰れ変形を付与す
る。重錘3の余熱温度は上述した重錘加熱手段4におけ
る加熱温度より低く設定されており、近赤外線照射装置
6は赤外線を照射して重錘3、および半導体素子1を加
熱し、はんだバンプ10を溶融する。この後、X−Yテ
ーブル81が駆動されて基板2を吸着ヘッド5の直下に
搬送し、吸着ヘッド5により重錘3を取り除いて実装作
業が終了する。
FIG. 4 shows a modification of this embodiment. In the following description, components that are essentially the same as those in the above-described embodiment will be denoted by the same reference numerals in the drawings, and description thereof will be omitted. In this modification, a near-infrared irradiating device (indirect heating means 6) is arranged in the device housing 8. As shown in FIG. 4B, after the weight 3 preheated by the hot plate 82 is placed on the upper surface of the semiconductor element 1, the XY table 81 is driven to convey the substrate 2 to the vicinity of the near-infrared irradiation device. I do. As shown in FIG. 3, the suction head 5 connects the weight 3 to the semiconductor element 1.
The weight 3 is pressed against the solder bump 10 of the semiconductor device 1 by a predetermined load when the semiconductor device 1 is placed on the semiconductor device 1 to apply a predetermined amount of crushing deformation. The residual heat temperature of the weight 3 is set lower than the heating temperature of the weight heating means 4 described above, and the near infrared irradiation device 6 irradiates infrared rays to heat the weight 3 and the semiconductor element 1, and Is melted. Thereafter, the XY table 81 is driven to convey the substrate 2 directly below the suction head 5, and the suction head 5 removes the weight 3 to complete the mounting operation.

【0024】なお、以上の説明では間接加熱手段6とし
て近赤外線照射装置を使用する場合を述べたが、不活性
ガス供給装置から高温の不活性ガスを供給してリフロー
のための熱源とすることもできる。
In the above description, the case where a near-infrared irradiation device is used as the indirect heating means 6 has been described. However, a high-temperature inert gas is supplied from an inert gas supply device to be used as a heat source for reflow. Can also.

【0025】図5に本発明の第2の実施の形態を示す。
この実施の形態において、基板2は半導体素子1を搭載
することなくホットプレート82上で予熱されており、
装置筐体8内の適宜位置に対象半導体素子1の供給部が
設けられる。半導体素子1には予め重錘3が積層されて
おり、図5(a)に示すように、X−Y方向に駆動可能
な吸着ヘッド5は重錘3と半導体素子1を吸着した後、
基板2上の所定位置に搬送する。重錘3と半導体素子1
の双方を積層状態で吸着するために、重錘3には表裏に
貫通する貫通孔が穿孔される。
FIG. 5 shows a second embodiment of the present invention.
In this embodiment, the substrate 2 is preheated on the hot plate 82 without mounting the semiconductor element 1,
A supply section for the target semiconductor element 1 is provided at an appropriate position in the device housing 8. The weight 3 is preliminarily laminated on the semiconductor element 1, and as shown in FIG. 5A, the suction head 5 that can be driven in the X-Y direction sucks the weight 3 and the semiconductor element 1,
It is transported to a predetermined position on the substrate 2. Weight 3 and semiconductor element 1
In order to adsorb both of them in a laminated state, through holes are formed in the weight 3 so as to penetrate both sides.

【0026】吸着ヘッド5は加熱手段を備えており、重
錘3と半導体素子1を吸着した状態で重錘3を加熱す
る。この後、X−Yテーブル81、あるいは吸着ヘッド
5を操作することにより半導体素子1を位置決めした
後、吸着ヘッド5で半導体素子1を基板2に押し付け、
半導体素子1のはんだバンプ10に所定量の潰れ変形を
付与する(図5(b)参照)。はんだバンプ10の潰し
工程が終了した後、図5(c)に示すように吸着ヘッド
5は吸着動作を解除して上方に引き上げられ、そのまま
放置すると、はんだバンプ10は重錘3の輻射熱により
溶融する。最後に重錘3を取り除いて実装作業が終了す
る。重錘3の取り除きは、例えば装置内に配置した図示
しないハンドリング手段によることが可能である。
The suction head 5 has a heating means, and heats the weight 3 while the weight 3 and the semiconductor element 1 are suctioned. Thereafter, the semiconductor element 1 is positioned by operating the XY table 81 or the suction head 5, and the semiconductor element 1 is pressed against the substrate 2 by the suction head 5.
A predetermined amount of crush deformation is applied to the solder bumps 10 of the semiconductor element 1 (see FIG. 5B). After the step of crushing the solder bumps 10, the suction head 5 releases the suction operation and is lifted upward as shown in FIG. 5C. I do. Finally, the weight 3 is removed, and the mounting operation is completed. The weight 3 can be removed by, for example, handling means (not shown) arranged in the apparatus.

【0027】なお、以上においては重錘3の輻射熱をは
んだバンプ10のリフローのための熱源として利用する
場合を示したが、このほかに、上述の第1の実施の形態
において変形例として示したように、近赤外線照射装
置、あるいは不活性ホットガス等の間接加熱手段6を使
用することもできる(図6参照)。
In the above description, the case where the radiant heat of the weight 3 is used as a heat source for reflowing the solder bumps 10 has been described. In addition to this, the modification is shown in the first embodiment described above. As described above, a near-infrared irradiation device or an indirect heating means 6 such as an inert hot gas can be used (see FIG. 6).

【0028】さらに、以上においては重錘3は直方体形
状のものを使用していたが、図7(a)に示すように、
はんだバンプ10の分布が均一でない場合には、図7
(b)に示すように、上面に突起30を突設したり、あ
るいは図7(c)に示すように、断面形状を異ならせる
ことにより各ハンダバンプに負荷される重量を均一化す
ることにより、バンプショートを防止することができ
る。突起30の配置あるいは断面形状は、はんだバンプ
10群の図心と重錘3の重心位置を一致させるように決
定される。
Further, in the above, the weight 3 has a rectangular parallelepiped shape. However, as shown in FIG.
If the distribution of the solder bumps 10 is not uniform, FIG.
As shown in FIG. 7 (b), a protrusion 30 is provided on the upper surface, or as shown in FIG. Bump shorts can be prevented. The arrangement or cross-sectional shape of the projection 30 is determined so that the centroid of the group of the solder bumps 10 and the position of the center of gravity of the weight 3 coincide.

【0029】[0029]

【発明の効果】以上の説明から明らかなように、本発明
によれば、重錘のみを加圧手段として使用するために、
加熱時の微振動による位置ずれ等を確実に防止すること
ができる。
As is apparent from the above description, according to the present invention, since only the weight is used as the pressing means,
It is possible to reliably prevent displacement or the like due to minute vibration during heating.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明を示す図で、(a)は重錘の載置工程を
示す図、(b)ははんだバンプ押し潰し工程を示す図、
(c)はんだバンプリフロー工程を示す図である。
1A and 1B are diagrams showing the present invention, wherein FIG. 1A is a diagram showing a weight placing process, FIG. 1B is a diagram showing a solder bump crushing process,
(C) It is a figure which shows a solder bump reflow process.

【図2】半導体実装装置を示す図で、(a)は初期状態
を示す図、(b)は重錘の載置工程を示す図である。
FIGS. 2A and 2B are diagrams showing a semiconductor mounting device, wherein FIG. 2A is a diagram showing an initial state, and FIG. 2B is a diagram showing a mounting process of a weight.

【図3】図1の変形例を示す図で、(a)は重錘の載置
工程を示す図、(b)ははんだバンプ押し潰し工程を示
す図、(c)ははんだバンプリフロー工程を示す図であ
る。
3A and 3B are views showing a modification of FIG. 1, wherein FIG. 3A shows a step of placing a weight, FIG. 3B shows a step of crushing solder bumps, and FIG. 3C shows a step of solder bump reflow. FIG.

【図4】半導体実装装置を示す図で、(a)は初期状態
を示す図、(b)ははんだバンプリフロー工程を示す図
である。
4A and 4B are diagrams showing a semiconductor mounting device, wherein FIG. 4A is a diagram showing an initial state, and FIG. 4B is a diagram showing a solder bump reflow process.

【図5】本発明の第2の実施の形態を示す図で、(a)
は基板への載置工程を示す図、(b)ははんだバンプ押
し潰し工程を示す図、(c)ははんだバンプリフロー工
程を示す図である。
FIG. 5 is a diagram showing a second embodiment of the present invention;
FIG. 7 is a view showing a mounting step on a substrate, FIG. 7B is a view showing a solder bump crushing step, and FIG. 7C is a view showing a solder bump reflow step.

【図6】図5の変形例を示す図で、(a)は重錘の載置
工程を示す図、(b)ははんだバンプ押し潰し工程を示
す図、(c)ははんだバンプリフロー工程を示す図であ
る。
6A and 6B are diagrams showing a modification of FIG. 5, wherein FIG. 6A shows a weight placing process, FIG. 6B shows a solder bump crushing process, and FIG. 6C shows a solder bump reflow process. FIG.

【図7】重錘の変形例を示す図で、(a)は半導体素子
を示す図、(a)は重錘の平面図、(b)は他の変形例
に係る重錘の断面図である。
7A and 7B are diagrams showing a modification of the weight, wherein FIG. 7A is a diagram showing a semiconductor element, FIG. 7A is a plan view of the mass, and FIG. 7B is a sectional view of a mass according to another modification. is there.

【図8】従来例を示す図である。FIG. 8 is a diagram showing a conventional example.

【符号の説明】[Explanation of symbols]

1 半導体素子 10 はんだバンプ 2 基板 3 重錘 4 重錘加熱手段 5 吸着ヘッド 6 間接加熱手段 DESCRIPTION OF SYMBOLS 1 Semiconductor element 10 Solder bump 2 Substrate 3 Weight 4 Weight heating means 5 Suction head 6 Indirect heating means

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】加圧、加熱条件下で半導体素子のはんだバ
ンプをリフローして基板上に半導体素子をはんだ付けす
る半導体素子の実装方法であって、 半導体素子上に載置された重錘のみによる加圧条件下で
はんだバンプをリフローする半導体素子の実装方法。
1. A method for mounting a semiconductor element, comprising reflowing solder bumps of the semiconductor element under pressure and heating conditions and soldering the semiconductor element on a substrate, wherein only a weight placed on the semiconductor element is provided. A method of mounting a semiconductor device in which solder bumps are reflowed under pressurized conditions according to the present invention.
【請求項2】加圧、加熱条件下で半導体素子のはんだバ
ンプをリフローして基板上に半導体素子をはんだ付けす
る半導体素子の実装方法であって、 上面に所定重量の重錘を載置した半導体素子を基板上の
所定位置に載置し、前記重錘のみによる加圧条件下では
んだバンプをリフローする半導体素子の実装方法。
2. A method of mounting a semiconductor device, comprising reflowing solder bumps of the semiconductor device under pressure and heating conditions and soldering the semiconductor device on a substrate, wherein a weight having a predetermined weight is placed on the upper surface. A method of mounting a semiconductor element, comprising mounting a semiconductor element at a predetermined position on a substrate and reflowing a solder bump under a pressurized condition using only the weight.
【請求項3】所定重量の重錘と、 重錘加熱手段により加熱された重錘を基板上に保持され
た半導体素子の上面に搬送し、搬送後に搬送位置から退
避する吸着ヘッドとを有し、 重錘により半導体素子を加圧しながら重錘の輻射熱で半
導体素子のはんだバンプをリフローする半導体素子の実
装装置。
3. A weight having a predetermined weight, and a suction head for transferring the weight heated by the weight heating means to an upper surface of the semiconductor element held on the substrate, and retreating from the transfer position after the transfer. A semiconductor element mounting apparatus that reflows solder bumps of a semiconductor element by radiant heat of the weight while the semiconductor element is pressed by the weight.
【請求項4】所定重量の重錘と、 上面に重錘が積層された半導体素子を基板上の所定位置
に搬送し、搬送後に搬送位置から退避する吸着ヘッド
と、 重錘、および半導体素子を加熱し、重錘による加圧条件
下ではんだバンプをリフローする間接加熱手段とを有す
る半導体素子の実装装置。
4. A weight having a predetermined weight, a suction head for transferring a semiconductor element having a weight stacked on an upper surface thereof to a predetermined position on a substrate, and retreating from the transfer position after the transfer, a weight and the semiconductor element. An indirect heating means for heating and reflowing the solder bumps under a pressure condition by a weight.
【請求項5】所定重量の重錘と、 上面に重錘が積層された半導体素子を基板上の所定位置
に搬送し、搬送後に搬送位置から退避する吸着ヘッドと
を有し、 前記吸着ヘッドにより加熱された重錘により半導体素子
を加圧しながら重錘の輻射熱で半導体素子のはんだバン
プをリフローする半導体素子の実装装置。
5. A weight having a predetermined weight, and a suction head for transferring a semiconductor element having a weight stacked on an upper surface thereof to a predetermined position on a substrate and retracting from the transfer position after the transfer, and A semiconductor element mounting apparatus that reflows solder bumps of a semiconductor element by radiant heat of the weight while the semiconductor element is pressed by the heated weight.
JP5773698A 1998-03-10 1998-03-10 Method for mounting semiconductor element Pending JPH11260859A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5773698A JPH11260859A (en) 1998-03-10 1998-03-10 Method for mounting semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5773698A JPH11260859A (en) 1998-03-10 1998-03-10 Method for mounting semiconductor element

Publications (1)

Publication Number Publication Date
JPH11260859A true JPH11260859A (en) 1999-09-24

Family

ID=13064214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5773698A Pending JPH11260859A (en) 1998-03-10 1998-03-10 Method for mounting semiconductor element

Country Status (1)

Country Link
JP (1) JPH11260859A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007074889A1 (en) * 2005-12-28 2007-07-05 Kabushiki Kaisha Toyota Jidoshokki Soldering method, semiconductor module manufacturing method and soldering apparatus
WO2007077688A1 (en) 2005-12-28 2007-07-12 Kabushiki Kaisha Toyota Jidoshokki Soldering method and semiconductor module manufacturing method
JP2013080759A (en) * 2011-10-03 2013-05-02 Panasonic Corp Semiconductor element mounting method
KR20150046294A (en) * 2012-08-30 2015-04-29 유니버셜 인스트루먼츠 코퍼레이션 3d tsv assembly method for mass reflow
US20150165537A1 (en) * 2012-08-30 2015-06-18 Universal Instruments Corporation 3d tsv assembly method for mass reflow
US11363725B2 (en) 2017-11-02 2022-06-14 Universal Instruments Corporation Fixture to hold part before and after reflow, and method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007074889A1 (en) * 2005-12-28 2007-07-05 Kabushiki Kaisha Toyota Jidoshokki Soldering method, semiconductor module manufacturing method and soldering apparatus
WO2007077688A1 (en) 2005-12-28 2007-07-12 Kabushiki Kaisha Toyota Jidoshokki Soldering method and semiconductor module manufacturing method
JP2007180457A (en) * 2005-12-28 2007-07-12 Toyota Industries Corp Soldering method, method of manufacturing semiconductor module, and soldering apparatus
KR101004587B1 (en) * 2005-12-28 2010-12-28 가부시키가이샤 도요다 지도숏키 Soldering method, semiconductor module manufacturing method and soldering apparatus
JP2013080759A (en) * 2011-10-03 2013-05-02 Panasonic Corp Semiconductor element mounting method
KR20150046294A (en) * 2012-08-30 2015-04-29 유니버셜 인스트루먼츠 코퍼레이션 3d tsv assembly method for mass reflow
US20150165537A1 (en) * 2012-08-30 2015-06-18 Universal Instruments Corporation 3d tsv assembly method for mass reflow
US10052705B2 (en) * 2012-08-30 2018-08-21 Universal Instruments Corporation 3D TSV assembly method for mass reflow
US11363725B2 (en) 2017-11-02 2022-06-14 Universal Instruments Corporation Fixture to hold part before and after reflow, and method

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