JPH11258628A - Active matrix type liquid crystal display element and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide the active matrix type liquid crystal display element which has its display quantity and liquid crystal response improved. SOLUTION: On an array substrate, a large number of pixel areas encircled with scanning signal lines, opposite signal lines, and display signal lines are formed. In each pixel area, a display pixel electrode 48 extending in parallel to a display signal line and two opposite electrodes 46 provided on both the sides of the display pixel electrode at a predetermined distance D are formed. The opposite electrodes are formed on an undercoat layer and covered with a gate insulating film. In each pixel area, the part of the gate insulating film which is positioned in an electrode field production area is removed to form an opening and at least part of the opposite electrode is exposed to the opening. The opposite electrode parts and display pixel electrode which are exposed in the opening are covered with a protection film.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix type liquid crystal display device, and more particularly to an active matrix type liquid crystal display device of an in-plane switching type and a method of manufacturing the same.

[0002]

2. Description of the Related Art In recent years, large-capacity, high-density display elements for use in television displays and graphic displays have been actively developed and put into practical use as display elements using liquid crystals. In particular, active matrix liquid crystal display elements capable of displaying a high contrast ratio without crosstalk have been widely developed and commercialized.

Further, in recent years, there has been a demand for a liquid crystal display element having a wide viewing angle for monitor applications, and various types of techniques for increasing the viewing angle have been developed. In particular, by forming a display pixel electrode and a counter electrode on the same substrate,
I to make the liquid crystal respond with an electric field generated substantially parallel to the substrate
A liquid crystal display element called a PS (in-plane switching) method has attracted attention.

As an active matrix type liquid crystal display device adopting the IPS system, a display pixel electrode of an array substrate is formed by a display signal line layer, a counter electrode is formed by a scanning signal line layer, and an auxiliary capacitor is formed on the counter signal line. And a device using a staggered thin film transistor (hereinafter, referred to as TFT) as a switching element has been proposed.

That is, according to this liquid crystal display element, a plurality of scanning signal lines and counter signal lines extending in parallel with each other are provided on the insulating substrate of the array substrate. A plurality of display signal lines parallel to each other are provided via a gate insulating film, and extend in a direction orthogonal to the scanning signal lines and the counter signal lines. Each of the regions surrounded by the scanning signal line, the counter signal line, and the display signal line forms a rectangular pixel region, and each pixel region intersects the scanning signal line and the display signal line via a switching element. Is electrically connected to

In each pixel region, a counter electrode electrically connected to a counter signal line and a display pixel electrode electrically connected to a switching element are provided at predetermined intervals. The counter electrode is formed by the same layer as the scanning signal line and the counter signal line, is located between the gate insulating film and the insulating substrate, and the display pixel electrode is formed by the same layer as the display signal line, and Located on the membrane. Further, an insulating film functioning as a protective film is formed over the entire surface of the uppermost layer of the array substrate. Then, a desired image is displayed by causing the liquid crystal to respond by an electric field generated between the display pixel electrode and the counter electrode.

[0007]

SUMMARY OF THE INVENTION
In an active matrix type liquid crystal display element adopting the PS system, the counter electrode is covered with two layers of insulating films including a gate insulating film and a protective film, while the display pixel electrode is formed of a protective film. It is covered only by the insulating film of the layer. Therefore, the insulating film covering the counter electrode and the insulating film covering the display pixel electrode have different thicknesses, and the electric field distribution near the counter electrode and the display pixel electrode becomes asymmetric.

That is, when the thickness of the insulating film is increased, the electric field strength is weakened, and a difference occurs between the electric field strength on the counter electrode side and the electric field strength on the display pixel electrode side. As a result, it becomes difficult to form an electric field parallel to the insulating substrate between the counter electrode and the display pixel electrode, causing uneven brightness and a lower contrast, and lowering the display quality of the screen.

Further, in consideration of the responsiveness of the liquid crystal, it is desirable that the electric field generated between the display pixel electrode and the counter electrode is completely parallel to the surface of the insulating substrate. Is reduced.

The present invention has been made in view of the above points, and an object of the present invention is to provide an active matrix type liquid crystal display element which can improve display quality and has excellent liquid crystal responsiveness, and a method of manufacturing the same. It is in.

[0011]

In order to achieve the above object, an active matrix type liquid crystal display device according to the present invention comprises first and second substrates which are arranged to face each other with a liquid crystal layer interposed therebetween. The one substrate includes an insulating substrate, a first insulating layer formed on the insulating substrate, a plurality of parallel scanning signal lines and opposing signal lines provided on the first insulating layer, and the scanning signal line. A second insulating layer formed on the insulating substrate so as to overlap the opposing signal line; and a plurality of parallel insulating layers provided on the second insulating film so as to intersect the scanning signal line and the opposing signal line. Display signal line,
A plurality of pixels defined in an area surrounded by the scanning signal line, the counter signal line, and the display signal line, and each of which is electrically connected to an intersection of the scanning signal line and the display signal line via a switching element. And a third insulating layer formed on the second insulating layer so as to cover the display signal line and the pixel region.

Each of the pixel regions has an elongated first electrode electrically connected to the switching element, and is electrically connected to the opposite signal line, and at least a part of the first electrode is substantially connected to the first electrode. A second electrode that extends in parallel and forms an electric field for changing the orientation of the liquid crystal layer between the first electrode and the first electrode; A portion located in the electric field formation region is removed to form an opening, and at least a portion of the second electrode is provided to be exposed in the opening, and the first electrode and the second electrode located in the opening are provided. The portion is covered with the third insulating layer.

According to the active matrix type liquid crystal display device configured as described above, in each pixel region,
A portion of the second insulating layer located in the electric field formation region is removed to form an opening, and a portion of the second electrode, that is, a portion contributing to the electric field formation, is provided to be exposed in the opening. I have. And the said part of a 2nd electrode and a 1st electrode are
It is covered by a common third insulating layer.

Therefore, the portion of the second electrode that contributes to the formation of the electric field is directly covered with the third insulating layer without the interposition of the second insulating layer, and this portion and the insulating layer covering the first electrode are the same. The film thickness is as follows. Therefore, the first and second
The electric field intensity at the electrodes becomes equal, and the electric field distribution near the electrodes can be made symmetric. As a result, an electric field generated between the first and second electrodes becomes uniform, luminance unevenness between the two electrodes is reduced, and contrast is improved. at the same time,
The ratio of the electric field parallel to the insulating substrate increases, and the response of the liquid crystal can be improved. As a result, the roughness of the screen is reduced, and the display quality is improved.

Further, according to a method of manufacturing an active matrix type liquid crystal display element according to the present invention, a plurality of scanning signal lines and counter signal lines provided in parallel on an insulating substrate via a first insulating layer; A plurality of display signal lines parallel to each other provided on the scanning signal line and the opposing signal line via the second insulating layer so as to cross the scanning signal line and the opposing signal line; And a plurality of pixel regions defined in a region surrounded by the display signal lines and electrically connected to the intersections of the scanning signal lines and the display signal lines via switching elements, respectively.
An elongated first electrode electrically connected to the switching element and extending in parallel with the display signal line; an elongated first electrode extending substantially parallel to the first electrode at a predetermined distance from the pixel region; An active matrix type liquid crystal display element, which is electrically connected to a signal line and has a second electrode for forming an electric field for changing the orientation of the liquid crystal layer between the first electrode and the first electrode, is provided. In the method, a first insulating layer is formed on an insulating substrate, a first conductor layer is formed on the first insulating layer, and then the plurality of scanning signal lines, the opposite signal lines, and the plurality of Forming two electrodes, forming a second insulating layer on the first insulating layer so as to overlap the scanning signal line, the counter signal line, and the second electrode;
A portion of the second insulating layer located in the electric field forming region is removed by etching to form an opening, at least a part of the second electrode is exposed in the opening, and a gate insulating film having the opening formed therein is formed. After forming the second conductor layer on the layer, the plurality of display signal lines and the first electrode are formed by etching, and the display signal line, the first electrode, and the second electrode portion exposed to the opening are formed. To cover the second
It is characterized in that a third insulating layer is formed on the insulating layer.

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a liquid crystal display device having an active matrix type liquid crystal display device according to an embodiment of the present invention will be described in detail with reference to the drawings.
As shown in FIG. 1, the liquid crystal display device includes an IPS type liquid crystal display element 10, a signal line driving circuit board 14 for driving the liquid crystal display element, a scanning line driving circuit board 16, each driving circuit board and the liquid crystal display element. And a plurality of tape carrier packages (referred to as TCP) 18 electrically connected to each other.

As shown in FIGS. 1 and 2, the liquid crystal display element 10 includes an array substrate 20 functioning as a first substrate and an opposing substrate 22 functioning as a second substrate. By bonding with an agent, they are opposed to each other with a predetermined gap.
The liquid crystal composition 24 is sealed between the array substrate 20 and the opposing substrate 22. The array substrate 20
And on the outer surface of the counter substrate 22, the polarizing plate 2
5 and 26 are arranged.

As shown in FIGS. 2 and 3, the array substrate 20 has a glass substrate 28 functioning as an insulating substrate.
An undercoat layer 27 functioning as a first insulating layer is formed on the surface of the glass substrate. Undercoat layer 2
Reference numeral 7 denotes a silicon nitride (SiN) film 2 formed on the surface of the glass substrate 28 to prevent intrusion of impurities generated from the glass.
7a and silicon oxide (Si) formed on the SiN film.
O) film 27b.

On the undercoat layer 27, a large number of scanning signal lines 30 extending in parallel with each other in the horizontal direction, a large number of opposing signal lines 32 also extending in parallel with each other in the horizontal direction, and a vertical direction. Extending parallel to each other,
That is, a number of display signal lines 34 extending in a direction orthogonal to the scanning signal lines 30 and the opposing signal lines 32 are provided.

Each scanning signal line 30 and counter signal line 32
Is formed with a low resistance metal material such as a molybdenum-tungsten (Mo-W) alloy to a thickness of 3000 Å. One end of each scanning signal line 30 is connected to a first power supply electrode 36 formed on the glass substrate 28,
One end of each of the opposing signal lines is connected to a second power supply electrode 38 formed on the glass substrate 28. The second power supply electrodes 38 are connected to each other by a power supply wiring 40 extending in the vertical direction. And the first and second power supply electrodes 3
Reference numerals 6 and 38 denote scanning line driving circuit boards 1 via the TCP 18.
6 is connected.

The display signal line 34 is formed, for example, via a gate insulating film 42 made of silicon oxide (SiO).
The signal lines are provided on the scanning signal lines 30 and the opposing signal lines 32 substantially orthogonal to these signal lines. The display signal line 34 has, for example, a single-layer structure of aluminum or an alloy containing aluminum, or a laminated structure of aluminum or an aluminum alloy and molybdenum, and is formed to have a thickness of about 6000 Å. Each display signal line 3
One end of 4 is connected to a third power supply electrode 44 provided on the glass substrate 28. Then, the third power supply electrode 44
Are connected to the signal line drive circuit board 14 via the TCP 18.

On the array substrate 20, the scanning signal lines 3
Regions surrounded by 0, the opposing signal line 32, and the display signal line 34 each form a rectangular pixel region P. As shown in FIGS. 2 to 6, each pixel region P is provided with two opposing electrodes 46 and one display pixel electrode 48, and the display pixel electrode is a staggered type forming a switching element. Thin film transistor (hereinafter TF
(Referred to as T) 52 is connected to the intersection of the scanning signal line signal line 30 and the display signal line scanning line 34.

More specifically, of the opposing signal lines 32,
The portion located in the pixel region P is formed to have a wider width than other portions, and constitutes a rectangular connection portion 32a. Second
The two opposing electrodes 46 functioning as electrodes are formed by photo-etching the same conductor layer as the opposing signal line 32, that is, the Mo-W film.
7.

These opposing electrodes 46 are connected to the opposing signal lines 32.
Extend from the connecting portion 32a of FIG. 1 to the vicinity of the scanning signal line 30 in parallel with the display signal line 34, and are provided at a predetermined interval from each other. The two opposing electrodes 46 are connected to each other at extending ends by a connecting portion 46a extending in parallel with the scanning signal line 30, and are formed substantially in a U-shape as a whole.

On the undercoat layer 27, the scanning signal line 30, the counter signal line 32, and the counter electrode 4 including the connecting portion 46b.
6, a gate insulating film 42 is formed. The gate insulating film 42 is made of a SiO film and functions as a second insulating layer.

In each pixel region P, the gate insulating film 42
Among them, a portion located in an electric field forming region described later is removed to form a rectangular opening 45. Accordingly, except for the connection portion 32a and the connection portion 46a of the opposing signal line 32, a portion located between the two opposing electrodes 46 and a side edge portion of each opposing electrode 46 include a display pixel electrode 48 described later.
Is exposed in the opening 45 without being covered by the gate insulating film 42.

The display signal line 34 and the display pixel electrode 48 functioning as a first electrode are provided on the gate insulating film 42 and have the same conductor layer, for example, 6000.
It is formed by photo-etching an Angstrom thick Al film. Note that the Al film is formed to have a thickness of 3000 Å or more, preferably 5000 Å or more.

In each pixel area P, the display pixel electrode 48
Extends between the two opposing electrodes 46 in parallel with these opposing electrodes, and has one end 48a extending in parallel with the opposing signal line 32, and is formed substantially in a T-shape as a whole. One end 48a sandwiches the gate insulating film 42,
The auxiliary capacitance Ca is provided so as to overlap the connection portion 32a of the opposing signal line 32, and forms an auxiliary capacitor Ca with the connection portion 32a. The other end of the display pixel electrode 48 extends to the vicinity of the scanning signal line 30 and is electrically connected to a TFT 52 described later. In addition, in the display pixel electrode 48, the opening 4 of the gate insulating film 42 is formed.
The portion passing through the inside 5 is provided directly on the undercoat layer 27 without the intervention of the gate insulating film.

The distance D between the display pixel electrode 48 and each counter electrode 46 is set to be the same. And the display pixel electrode 4
The opening between the pixel region P and the space between the counter electrode 8 and each counter electrode 46 is defined.

As can be clearly understood from FIGS. 2 and 5, the display pixel electrodes 48 are provided at the side edges 46 of the counter electrode 46, respectively.
b, a pair of side surfaces facing each other, and a glass substrate 2 on each side surface.
The inclination (taper angle) with respect to 8 is formed in a range of 30 degrees or more and 90 degrees or less, and preferably, 90 degrees.

As can be clearly understood from FIGS. 4 and 6, each TFT 52 uses the scanning signal line 30 itself as a gate electrode 60, and is formed of i-type amorphous silicon (a-Si) on the gate electrode via a gate insulating film 42. The semiconductor layer 62 is formed to form a channel region. On the semiconductor layer 62, a channel protective film 64 made of a silicon nitride layer self-aligned with the scanning signal line 30 is formed.

The semiconductor layer 62 is made of n + type a-Si
The display pixel electrode 48 via the film 66 and the source electrode 67
And is connected to the display signal line 34 via the n + type a-Si film 66 and the drain electrode 68. The source electrode 67 is formed of the same conductive film as the display pixel electrode 48, and the drain electrode 68
Are formed of the same conductive film as the display signal line 34.

The entire surface of the array substrate 20 is covered with a protective film 70 made of a SiN film functioning as a third insulating film. Here, in each pixel region P,
Since the side edge 46b of each counter electrode 46 is exposed in the opening 45 of the gate insulating film 42, the display pixel electrode 48
In the same manner as described above, without the intervention of the gate insulating film 42,
It is covered with a protective film 70.

On the other hand, as shown in FIG. 2, the counter substrate 22 includes a transparent glass substrate 80 functioning as an insulating substrate.
On this glass substrate, a light shielding layer 82 made of a chromium (Cr) oxide film is formed. The light shielding layer 82 is formed in a matrix so as to shield the TFT 52, the scanning signal line 30, the counter signal line 32, and the display signal line 34 on the array substrate 20 from light.

On the glass substrate 80, each opening defined by the matrix-shaped light-shielding layer 82 is located to face the pixel region P on the array substrate 20 side. , Blue color filter layer 84 is formed. Then, an alignment film 86 is provided so as to overlap the light shielding layer 82 and the color filter layer 84.

Here, the opening 45 of the gate insulating layer 42 provided in each pixel region P of the array substrate 20 is formed to be larger than each opening defined by the matrix-shaped light shielding layer 82.

Next, the array substrate 20 constructed as described above
Will be described. First, a SiN film 27a as a first layer is formed to a thickness of 500 Å and a SiO film 27b as a second layer is formed to a thickness of 500 Å in order on a glass substrate 28 to form an undercoat layer 27 having a thickness of 1000 Å. . SiN film 27
“a” prevents impurities such as sodium ions generated from the glass substrate 28 from entering the liquid crystal layer 24.

Subsequently, as shown in FIGS. 7 and 8, a Mo-W film as a first conductor layer is formed to a thickness of 3000 angstroms on the undercoat layer 27 by a sputtering method, and then a chemical dry film is formed. Etching (hereinafter CDE)
), The gate electrode 60, the scanning signal line 30,
The opposing signal line 32, the first and second power supply electrodes 36, 38,
In addition, the counter electrodes 46 and 46a are processed into a predetermined shape.
At this time, the SiO film 27b of the undercoat layer 27 functions as an etching stopper to prevent the SiN film 27a from being removed by etching.

Next, after a pattern inspection of the scanning signal line 30 is performed, a gate insulating film 42 made of SiO is formed to a thickness of 3000 angstroms, and an i-type a-Si film is formed as a semiconductor layer 62 serving as a channel region of the TFT 52. The glass substrate 28 is formed to a thickness of 500 angstroms by the CVD method.
Is coated over the entire surface.

Subsequently, as shown in FIGS. 9 and 10,
The etching protection film 64 of the TFT 52 made of SiN is C
After 2,000 angstrom film formation by VD method,
Only this channel protective film is processed into a predetermined shape by photo-etching. Further, an n + type a
After forming a 500 Å-Si film, an i-type
The -Si film and the n + type a-Si film are processed into a predetermined shape by photo-etching. At this time, the SiO film 27b of the undercoat layer 27 functions as an etching stopper to prevent the SiN film 27a from being removed by etching.

Next, the gate insulating film is partially removed by etching the gate insulating film with a diluted hydrofluoric acid buffer (BHF), and openings 45 are formed in the respective pixel regions. At this time, the SiO film 27 of the undercoat layer 27
Of b, the portion facing the opening 45 is also etched away. Also, the SiN film 27 of the undercoat layer 27
a acts as an etching stopper.

Subsequently, the glass substrate 28 is sputtered.
After forming 6000 Å of Al as a second conductor layer on the entire surface of the TFT, the display signal line 34, the source and drain electrodes 67 and 68 of the TFT 52, the display pixel electrode 48, The power supply wiring 40 of the signal line and the n + type a-Si film between the source and drain electrodes are processed into a predetermined shape.

Anisotropic etching, such as RIE (radial ion), is performed on the Al film so that the taper angle of the side surface of the display pixel electrode 48 is 30 degrees or more and 90 degrees or less, preferably 90 degrees. It is desirable to use (etching). If the taper angle of the side surface becomes substantially vertical by optimizing the etching time and other etching conditions, or the film quality and film forming conditions of the display signal line layer, plasma etching or wet etching may be used. Good.

Finally, as shown in FIG. 5 and FIG.
By the VD method, the protective film 70 made of Si-N is
After forming the angstrom film, it is processed into a predetermined shape by photo-etching to complete the array substrate 20. The array substrate 20 formed in this way is bonded to the counter substrate 22, and the liquid crystal composition is sealed between the substrates.
The active matrix type liquid crystal display element 10 is completed.

According to the liquid crystal display device configured as described above, when a voltage is applied between the display pixel electrode 48 and each counter electrode 46 in each pixel region P of the array substrate 20, FIG. As indicated by the broken lines, an electric field is formed between the display pixel electrode and each counter electrode. Then, the liquid crystal composition in the liquid crystal layer 24 changes its orientation in response to the electric field.

At this time, the portion of the gate insulating film 42 located in the electric field forming region is removed to form an opening 45, and the side edge 46 b of each counter electrode 46 contributing to the formation of the electric field is located in the opening 45. It is exposed. The side edge 46b of the counter electrode 46 and the display pixel electrode 48 located in the electric field forming region are both covered with only the protective film 70, that is, with the same thickness of the insulating film.

Accordingly, the electric field intensity at the display pixel electrode 48 and each counter electrode 46 becomes equal, and the electric field distribution near the electrodes can be made symmetric. As a result, the counter electrode 4
An electric field parallel to the glass substrate 28 can be formed between the pixel electrode 6 and the display pixel electrode 48, so that luminance unevenness between the two electrodes can be reduced and the contrast can be improved.
As a result, display defects such as screen roughness can be reduced, and the display quality of the liquid crystal display device can be improved. At the same time, the ratio of the electric field generated between the electrodes and parallel to the glass substrate surface is increased, and the responsiveness of the liquid crystal is improved.

Further, as described above, the side edge 46b of the counter electrode 46 that contributes to the formation of the electric field is covered with only the protective film 70, so that both the gate insulating film and the protective film are formed in a conventional manner. As compared with the case where it is covered,
The thickness of the insulating film covering b is reduced, and the luminance can be improved accordingly.

The present invention is not limited to the above-described embodiment, but can be variously modified within the scope of the present invention. For example, the display signal lines and the display pixel electrodes are not limited to Al. For example, even in the case of a laminated structure in which both surfaces of Al are sandwiched by Mo, the same operation and effect as in the above-described embodiment can be obtained. Also, the number of counter electrodes can be increased or decreased as necessary, and similarly, the number of display pixel electrodes may be increased as needed.

[0050]

As described above in detail, according to the present invention, in each pixel region, the portion of the second insulating film covering the second electrode, which is located in the electric field forming region, is removed to form an opening. An active matrix type liquid crystal in which at least a portion of the second pixel electrode is exposed and provided in the opening to make the electric field intensity uniform and display quality is improved, and the response of the liquid crystal is improved. An indicator and a manufacturing method thereof can be provided.

[Brief description of the drawings]

FIG. 1 is a perspective view showing an active matrix type liquid crystal display device according to an embodiment of the present invention.

FIG. 2 is a sectional view of a liquid crystal display element in the liquid crystal display device.

FIG. 3 is a plan view schematically showing an array substrate in the liquid crystal display device.

FIG. 4 is an enlarged plan view showing a pixel region of the array substrate.

FIG. 5 is a sectional view taken along the line AA in FIG. 4;

FIG. 6 is a sectional view taken along line BB in FIG. 4;

FIG. 7 is a plan view schematically showing a manufacturing process of the array substrate.

FIG. 8 is a sectional view taken along line CC of FIG. 7;

FIG. 9 is a plan view schematically showing a manufacturing process of the array substrate.

FIG. 10 is a sectional view taken along the line DD in FIG. 9;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 ... Liquid crystal display element 20 ... Array substrate 22 ... Counter substrate 27 ... Undercoat layer 28 ... Glass substrate 30 ... Scan signal line 32 ... Counter signal line 34 ... Display signal line 42 ... Gate insulating film 45 ... Opening 46 ... Counter electrode 48 ... display pixel electrode 48a ... one end 52 ... TFT 70 ... protective film P ... pixel area

Claims (11)

[Claims] A first liquid crystal layer disposed opposite to the first liquid crystal layer;
And a second substrate, wherein the first substrate has an insulating substrate, a first insulating layer formed on the insulating substrate, a plurality of scanning signal lines provided on the first insulating layer, the plurality of scanning signal lines being parallel to each other. An opposing signal line, a second insulating layer formed on the insulating substrate so as to overlap the scanning signal line and the opposing signal line, and a second insulating layer on the second insulating layer so as to intersect the scanning signal line and the opposing signal line. A plurality of display signal lines provided in parallel with each other, and a scanning signal line and a display signal line defined in a region surrounded by the scanning signal line, the counter signal line, and the display signal line, respectively, and via a switching element. And a third insulating layer formed on the second insulating layer so as to cover the display signal line and the pixel region. In the pixel area, the switching element An elongated first electrode electrically connected to, together with and is electrically connected to the counter signal line, at least part of the first
A second electrode extending substantially parallel to the electrode and forming an electric field for changing the orientation of the liquid crystal layer between the first electrode and the first electrode;
In each of the pixel regions, a portion of the second insulating layer located in the electric field forming region is removed to form an opening, and at least a part of the second electrode is exposed in the opening. An active matrix type liquid crystal display element, wherein the first electrode and the second electrode portion exposed in the opening are covered with the third insulating layer. 2. The first electrode is formed by processing the same conductor layer as the display signal line, and the second electrode is formed by processing the same conductor layer as the counter signal line. The active matrix type liquid crystal display device according to claim 1, wherein: 3. The active matrix type liquid crystal display device according to claim 1, wherein said first and second electrodes extend substantially in parallel with said display signal line. 4. The first electrode has one end overlapping the counter signal line via the second insulating layer to form an auxiliary capacitance, and the other end electrically connected to the switching element. The active matrix type liquid crystal display device according to claim 1, wherein: 5. An apparatus according to claim 4, wherein one end of said first electrode constitutes an auxiliary capacitance line extending in a direction parallel to said counter signal line and in a direction orthogonal to said second electrode. Active matrix type liquid crystal display device. 6. The device according to claim 1, wherein the second electrode has a side edge facing the first electrode and exposed in the opening. 4. An active matrix type liquid crystal display element according to item 1. 7. Each of the pixel regions is provided with two second electrodes parallel to each other, and the first electrodes are provided between the second electrodes at equal intervals as the second electrodes. The active matrix type liquid crystal display device according to claim 1, wherein: 8. The semiconductor device according to claim 1, wherein the first insulating layer has a laminated structure including a silicon nitride film formed on the insulating substrate and a silicon oxide film formed on the silicon nitride film. The active matrix type liquid crystal display device according to claim 1, wherein 9. The first electrode has a single-layer structure of aluminum or an alloy containing aluminum or a laminated structure of aluminum or an aluminum alloy and molybdenum, and the second electrode is made of an alloy of molybdenum and tungsten. 9. The active matrix type liquid crystal display device according to claim 1, wherein the active matrix type liquid crystal display device has a single-layer structure. 10. A plurality of scanning signal lines and opposing signal lines provided in parallel with each other via a first insulating layer on an insulating substrate, and a second insulating signal intersects with the scanning signal lines and the opposing signal lines. A plurality of display signal lines parallel to each other provided on the scanning signal line and the opposing signal line via a layer, and a switching defined respectively in an area surrounded by the scanning signal line, the opposing signal line, and the display signal line; A plurality of pixel regions electrically connected to the intersections of the scanning signal lines and the display signal lines via elements, and the display signal lines electrically connected to the switching elements in each of the pixel regions. An elongated first electrode extending in parallel with the first electrode, and a liquid crystal extending substantially parallel to the first electrode at a predetermined interval and electrically connected to the counter signal line; Change layer orientation A method for manufacturing an active matrix type liquid crystal display device provided with a second electrode for forming an electric field for forming an electric field, wherein a first insulating layer is formed on an insulating substrate, and a first insulating layer is formed on the first insulating layer. After forming the conductor layer, by etching, the plurality of scanning signal lines, the opposing signal lines,
And forming a plurality of second electrodes; forming a second insulating layer on the first insulating layer so as to overlap the scanning signal line, the counter signal line, and the second electrode; An opening is formed by removing a portion located in the electric field formation region by etching, exposing at least a part of the second electrode in the opening, and forming a second conductor layer on the gate insulating layer in which the opening is formed. After the formation, the plurality of display signal lines and the first electrode are formed by etching, and the second insulating layer is formed so as to cover the display signal line, the first electrode, and the second electrode portion exposed to the opening. A method for manufacturing an active matrix liquid crystal display element, comprising forming a third insulating layer on a layer. 11. The first insulating layer has a laminated structure including a first layer formed on the insulating substrate and a second layer formed on the first layer, and the first conductor layer is etched. In this case, the second layer of the first insulating layer is used as an etching stopper, and when the second insulating layer is etched to form the opening, the first layer of the first insulating layer is used as an etching stopper. The method of manufacturing an active matrix type liquid crystal display device according to claim 10, wherein: