JPH11251281A - Method and apparatus for manufacturing semiconductor wafer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To manufacture a high-quantity semiconductor wafer without causing the crystal defects by including a heating step for heating a semiconductor wafer substrate at specified temperature, when the finally cleaned semiconductor wafer substrate is carried out of a cleaning chamber to a processor for the next step. SOLUTION: With gates 12a, 12b left open, a transport chamber 2 communicates with a cleaning chamber 1 and the transport chamber 2 communicates with an epitaxial growth furnace 3, so that a semiconductor wafer W held by a robot hand 5 can be carried to the epitaxial growth furnace 3 from the cleaning chamber 1. When the finally cleaned semiconductor wafer W is carried out of the cleaning chamber 1 to a processor for the next step by the robot hand 5, the robot hand 5 has a heater covered with quartz 6 for heating the semiconductor wafer substrate W being carried at specified temperature. Thus it is possible to manufacture a high quantity semiconductor wafer without causing crystal defects.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer manufacturing method and apparatus for performing a final cleaning process on a semiconductor wafer substrate, and more particularly, to a transfer step and a transfer means for transferring a semiconductor wafer substrate from a cleaning chamber. .

[0002]

2. Description of the Related Art In a semiconductor wafer manufacturing process, prior to shifting to a semiconductor wafer heat treatment step or an epitaxial growth step, particles, metal impurities, organic substances, natural oxide films and the like are removed from the semiconductor wafer to purify the wafer. Therefore, the final cleaning of the wafer is performed by wet cleaning such as the RCA cleaning method. However, since a large amount of cleaning water is used in the final cleaning, water droplets adhere to the wafer after the final cleaning. If the wafer is left without removing the attached moisture, spot-like spots called watermarks are formed on the wafer surface, which causes crystal defects in the semiconductor wafer in the next heat treatment or epitaxial growth processing. Would. For this reason, after the final cleaning of the wafer, it is common practice to dry the wafer to remove the attached water. Such a method for drying a wafer includes a spin drying method in which a wafer after final cleaning is rotated at a high speed for a predetermined time in a cleaning chamber, and water droplets attached to the wafer are forcibly scattered and removed by centrifugal force of the rotation, or a wafer. Is attached to volatile isopropyl alcohol (IP
An IPA vapor drying method or the like in which a wafer is dried in place of A) is generally known. Then, in the conventional semiconductor wafer manufacturing method and apparatus, after the wafer drying processing is completed, the wafer is transferred to a heat treatment apparatus or an epitaxial growth apparatus for performing the next process by a transfer means such as a robot hand.

[0003]

However, such a conventional semiconductor wafer manufacturing method and apparatus have the following problems. In the spin drying method, water droplets on the wafer are scattered by the rotation of the wafer, and in the IPA vapor drying method,
The water on the wafer is removed by the replacement of isopropyl alcohol (IPA). However, since water atoms, oxygen atoms, oxygen molecules, water molecules, and the like are adsorbed on the wafer surface after the final cleaning, the spin drying method and the conventional semiconductor wafer manufacturing method and apparatus are used. Even if water droplets can be removed from the wafer only by the drying treatment by the IPA vapor drying method or the like, oxygen atoms, oxygen molecules, water molecules, and the like adsorbed on the wafer surface cannot be completely removed. In addition, since the drying process is performed in a cleaning chamber having a large amount of moisture in the atmosphere, moisture in the atmosphere and moisture once removed from the wafer are reattached to the wafer, and the moisture is completely removed from the wafer. Can not do. As described above, in the conventional semiconductor wafer manufacturing method and apparatus, moisture, oxygen atoms, oxygen molecules, and the like remain on the wafer even when the drying process is performed after the final cleaning. For this reason, there is a problem that a watermark is formed on the wafer surface due to the remaining moisture and the like, and crystal defects and deterioration of the quality of the epitaxial film are caused on the wafer by the heat treatment and the epitaxial growth processing in the next step.

In order to completely remove oxygen atoms, oxygen molecules, water molecules and the like adsorbed on the wafer, it is conceivable to perform a drying process in a cleaning chamber for a long period of time. The time is also long in accordance with the drying time, causing a problem that the efficiency of the semiconductor wafer manufacturing process is low.

It is also conceivable that a drying chamber separate from the cleaning chamber is newly provided in the semiconductor wafer manufacturing apparatus, and the semiconductor wafer is dried while keeping the atmosphere in the drying chamber free of moisture. However, in this case, a new process of transporting the wafer from the cleaning chamber to the drying chamber is required,
The entire processing time of the semiconductor wafer manufacturing becomes longer by the amount of these steps, and the problem that the semiconductor wafer cannot be manufactured efficiently cannot be solved. In addition, since a new drying chamber is provided, there is a problem that the apparatus becomes excessively large. In particular, in recent years, a large-diameter semiconductor wafer manufacturing apparatus of 400 mm diameter which has been attempted to manufacture has a large-sized semiconductor wafer, so that the equipment becomes excessively large. Therefore, a more compact apparatus is desired.

The present invention has been made in view of such a problem, and it is possible to manufacture a high-quality semiconductor wafer free from crystal defects by completely removing moisture adhering to a semiconductor wafer after final cleaning. A main object is to provide a method and an apparatus for manufacturing a semiconductor wafer. Another object of the present invention is to provide a semiconductor wafer manufacturing method and apparatus capable of efficiently manufacturing a semiconductor wafer by shortening a semiconductor wafer manufacturing time. Another object of the present invention is to provide a semiconductor wafer manufacturing method and apparatus capable of making the apparatus compact while completely removing moisture from a large-diameter semiconductor wafer.

[0007]

According to a first aspect of the present invention, a semiconductor wafer substrate cut from a semiconductor single crystal is finally cleaned, and then the finally cleaned semiconductor wafer substrate is cleaned. The present invention relates to a method for manufacturing a semiconductor wafer, wherein a transfer step of transferring the semiconductor wafer substrate to a processing apparatus for carrying out the next step after taking it out of the chamber includes a heating step of heating the transferred semiconductor wafer substrate to a predetermined temperature.

In the present invention, since the heating step is included in the transfer step, the wafer can be dried by heating during the transfer of the wafer. That is, in the present invention, as in the conventional method, after the final cleaning of the wafer, and after performing processes such as spin drying and IPA evaporative drying in the cleaning chamber, the wafer is continuously heated and transferred to the epitaxial growth apparatus. Drying is performed. For this reason, the drying process is performed on the wafer for a longer time than in the conventional method, and the moisture, oxygen atoms, water molecules, oxygen molecules, and the like attached to the wafer can be completely evaporated and removed. In particular, in the present invention, it is not necessary to dry the semiconductor wafer for a long time in a cleaning chamber in which the atmosphere contains a large amount of water, so that the water once removed does not re-attach to the wafer, and a cleaner semiconductor can be obtained. A wafer can be obtained.

In the present invention, the drying process such as spin drying and IPA evaporation drying in the cleaning chamber may be performed for the same time as the conventional method, and thereafter, the drying process by heating is performed during the transfer of the wafer. . For this reason, compared with the conventional method in which the drying time in the cleaning chamber must be extended in order to enhance the effect of removing water from the wafer, the entire time of the semiconductor wafer manufacturing process can be reduced, and the efficiency can be reduced. Semiconductor wafers can be manufactured.

Further, since it is not necessary to newly provide a drying chamber or the like in the apparatus for drying the wafer, the configuration of the entire apparatus can be made compact, and the large-diameter semiconductor wafer which tends to be excessively large. It is particularly suitable for the manufacturing apparatus of (1).

The "processing apparatus" of the present invention includes an epitaxial growth furnace, a wafer storage chamber for accommodating a plurality of wafers finally cleaned in a multi-stage cassette, and the like. For this reason, the transfer step of the present invention can be configured to transfer the wafer from the cleaning chamber to the epitaxial growth furnace and also to transfer the wafer to the wafer storage chamber. Before performing the epitaxial growth process, the inside of the epitaxial growth furnace is 700
In general, the wafer is heated to a residual heat temperature of 800 ° C. to 800 ° C. However, according to the present invention, the wafer can be heated to a predetermined temperature while the wafer is being transferred by the heating step. In the case where the wafer is transported from the chamber to the epitaxial growth furnace, there is an advantage that the wafer can be preheated.

Although the heating temperature of the semiconductor wafer in the heating step is not particularly limited, it should be a temperature at which water adhering to the semiconductor wafer after the final cleaning can be completely removed, for example, 200 ° C. to 300 ° C. Is preferred.

According to a second aspect of the present invention, a cleaning means for final cleaning a semiconductor wafer substrate cut out from a semiconductor single crystal before epitaxial growth, and storing the final cleaned semiconductor wafer substrate or performing the next step A processing unit;
In a semiconductor wafer manufacturing apparatus having transport means for transporting the semiconductor wafer substrate which has been finally cleaned from the cleaning means to the processing apparatus, the transport means has a heating means for heating the semiconductor wafer substrate being transported to a predetermined temperature. It is characterized by the following.

The present invention is an apparatus for carrying out the invention according to claim 1, and has the same operational effects as the invention according to claim 1.

The transfer means of the present invention is not particularly limited as long as it can transfer a semiconductor wafer. For example, a robot arm provided with a hand for holding the semiconductor wafer can be used.

Further, the transfer means is configured to transfer the semiconductor wafer, which has been finally cleaned, from the cleaning chamber into an epitaxial growth furnace as a processing apparatus, and also as a processing apparatus for temporarily storing the wafer from the cleaning chamber. It can be configured to be transported to a storage room.

As the heating means, for example, a heater or the like embedded in a transfer means such as a robot hand or an end effector can be used. In this case, the heater may be covered with quartz, and the heater may be provided together with the quartz in the conveying means. In this case, since quartz or the like is interposed between the semiconductor wafer and the heater and the semiconductor wafer does not directly contact the heater, there is an advantage that contamination of the semiconductor wafer by the heater can be prevented. Further, as a heating means, provided in the transfer path of the wafer,
It is also possible to use a hot air jet or the like for blowing hot air against the wafer being transported to heat the wafer.

According to a third aspect of the present invention, in the semiconductor wafer manufacturing apparatus according to the second aspect, the heating means supplies an inert gas heated to a predetermined temperature condition to the semiconductor wafer substrate being transported. It is characterized by comprising gas injection means for injecting.

According to the present invention, since the inert gas is jetted to the wafer by the gas jetting means provided in the heating means, the water removed from the semiconductor wafer by the heating is applied to the semiconductor wafer by the jetting flow of the inert gas. Away from the wafer to prevent moisture from re-adhering to the wafer.

As the inert gas, for example, nitrogen, argon and the like can be used.

The configuration of the gas injection means is not particularly limited as long as it injects an inert gas to the semiconductor wafer to keep moisture evaporated from the semiconductor wafer away. For example, when the heating unit is a heater embedded in quartz, the gas injection unit is provided with a plurality of holes provided in the quartz, and the inert gas is injected from the holes into the back surface of the semiconductor wafer. Can be configured.

According to a fourth aspect of the present invention, in the semiconductor wafer manufacturing apparatus according to the second or third aspect, the heating means further comprises a temperature adjusting means for adjusting a heating temperature of the semiconductor wafer substrate being transported. It is characterized by.

In the present invention, since the heating temperature of the semiconductor wafer by the heating means can be freely adjusted by the temperature adjusting means, the heating temperature can be adjusted stepwise according to the amount of water adhering to the semiconductor wafer, the distance of the transfer path, and the like. , Or arbitrarily set to a desired temperature, thereby improving the efficiency of semiconductor wafer manufacturing processing.

As such a temperature adjusting means, for example, SCR or PID can be used.

According to a fifth aspect of the present invention, in the semiconductor wafer manufacturing apparatus according to the third or fourth aspect, the transfer means further includes transfer chambers communicating with the cleaning means and the processing apparatus, respectively. The chamber is characterized by having an exhaust means for exhausting moisture removed from the semiconductor wafer substrate while injecting the inert gas.

In the present invention, the transfer chamber is a space for moving the wafer. Then, the moisture evaporated from the wafer by heating by the heating means is purged by the inert gas injected into the transfer chamber, and exhausted to the outside of the transfer chamber by the exhaust means. For this reason, it is possible to prevent the water once removed from the wafer by the heating means from re-adhering to the wafer, thereby further improving the cleanliness of the wafer.

The structure of the exhaust means in the present invention is not particularly limited as long as it removes moisture removed from the wafer and purges the transfer chamber with an inert gas. For example, a unit for flowing a purge gas into a laminar flow and quickly exchanging water or using a vacuum pump can be provided as an exhaust means.

[0028]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic configuration diagram of a semiconductor wafer manufacturing apparatus according to the present embodiment. The apparatus includes a cleaning chamber 1, a transfer chamber 2, and an epitaxial growth furnace 3 as a processing apparatus.

The cleaning chamber 1 is used for final cleaning of the semiconductor wafer W having undergone various manufacturing processes such as removal of a surface oxide film and polishing by an RCA cleaning method or the like, and drying the cleaned semiconductor wafer W by a spin drying method. The device is provided with an in-device gas replacement device (not shown) using an inert gas and the like.

The epitaxial growth furnace 3 heats the semiconductor wafer W after the final cleaning to a predetermined heating temperature, for example, 1100 ° C.
Reaction gas such as SiCl ₄ , SiHC at 1200 ° C.
This is an apparatus for forming an epitaxial film on the surface of the semiconductor wafer W by injecting l ₃ , SiH ₂ Cl ₂ , SiH _4, etc. The susceptor 14 for mounting and rotating the semiconductor wafer W and the inside of the furnace An infrared lamp 16 for heating, a reaction gas injector port 17 for injecting the reaction gas into the furnace, and a reaction gas vent port 18 for exhausting the reaction gas from the furnace to the outside are provided.

The transfer chamber 2 holds the semiconductor wafer W after the final cleaning.
Is a moving space of the wafer W for transferring the wafer W from the cleaning chamber 1 into the epitaxial growth furnace 3. The robot hand 5 holds the semiconductor wafer W, and the semiconductor wafer W held by the hand is moved inside the cleaning chamber 1 and inside the epitaxial growth furnace 3. The robot arm 4 that moves between the susceptor 14 and the susceptor 14 is provided. This movement of the robot arm 4
It is controlled by a four-axis robot 11 provided outside the transfer chamber 2. Here, the transfer chamber 2, the robot hand 5, the robot arm 4, and the four-axis robot 11 constitute a transfer unit of the present invention.

Gates 12a and 12b which can be opened and closed are provided at both ends of the transfer chamber 2 so as to demarcate the adjacent cleaning chamber 1 and the epitaxial growth furnace 3, respectively. Therefore, with the gates 12a and 12b open, the transfer chamber 2 and the cleaning chamber 1 communicate with each other, and the transfer chamber 2 and the epitaxial growth furnace 3 communicate with each other, and the semiconductor wafer W held by the robot hand 5 is moved by the robot arm 4 into the cleaning chamber. 1 can be transported into the epitaxial growth furnace 3.

In the present embodiment, the semiconductor wafer W is transported from the cleaning chamber 1 to the epitaxial growth furnace 3. However, a wafer provided with a multi-stage cassette for accommodating a plurality of semiconductor wafers W after the final cleaning. A storage chamber may be provided adjacent to the transfer chamber 2 to transfer the semiconductor wafer W from the cleaning chamber 1 to a multi-stage cassette in the wafer storage chamber.

The robot hand 5 has a heater 7 covered with quartz 6 as a heating means, and is moved by the robot arm 4 while holding the semiconductor wafer W. FIG.
FIG. 3 is an enlarged view of a state where the heater 7 and the semiconductor wafer W covered with quartz 6 are held by the robot hand 5 according to the present embodiment, and FIG. 3 is a plan view thereof. As shown in FIG. 2, a plurality of lift pins 10
Are provided so as to protrude upward, and the semiconductor wafer W is supported by these lift pins 10. And
The heater 7 covered with the quartz 6 is placed on the robot hand 5 at a position below the semiconductor wafer W supported by the lift pins 10. That is, as shown in FIG.
Are three lift pins 1 protruding from the robot hand 5
0 so that the semiconductor wafer W can be held with the heater 7 mounted. Accordingly, the semiconductor wafer W is heated by the heater 7 on the hand while being transferred to the epitaxial growth furnace 3 by the robot arm 4 while being held by the robot hand 5. For this reason, moisture remaining on the semiconductor wafer W that has been finally cleaned and oxygen atoms, oxygen molecules, water molecules, and the like adsorbed on the wafer W are evaporated by heating by the heater during the transfer of the wafer W to the epitaxial growth furnace. A drying process for removing the wafer W from the wafer W is performed. Further, since the heater 7 is covered with the quartz 6, the semiconductor wafer W does not directly contact the heater 7, so that contamination from the heater 7 can be prevented.

When the semiconductor wafer W is directly mounted on the heater 7 covered with quartz 6 without providing the lift pins 10 on the robot hand 5, as shown in FIG.
May be circular.

On the surface of the heater 7 covered with the quartz 6 on the semiconductor wafer W side, a plurality of injection ports 13 are provided as gas injection means for injecting an inert gas such as nitrogen or argon. The heater 7 has an inert gas supply device (not shown)
Are connected by a pressure-resistant and heat-resistant flexible tube (not shown). The semiconductor wafer is supplied from the injection port 13 while the inert gas supplied from the inert gas supply device is heated to a predetermined temperature by the heater 7. Injected to the W back surface. For this reason, there is an advantage that the temperature can be adjusted according to the amount of moisture attached to the wafer W, the distance of the transfer path, and the like, and an efficient drying process can be performed. The flexible tube is provided along the robot arm 4 so as not to hinder the movement of the robot arm.

The heater 7 is connected to SCR, PID, etc. as temperature adjusting means, so that the heating temperature of the heater 7 can be adjusted freely.

An inert gas injector port 8 for introducing an inert gas such as nitrogen or argon is provided at the upper part of the transfer chamber 2, and the gas in the transfer chamber 2 is externally provided at the bottom of the transfer chamber 2. In order to exhaust air, two inert gas vent ports 9 as exhaust means are provided. The injector port 8 is connected to an inert gas supply device (not shown) by a pipe, and the gas flow rate, the pressure, and the like are adjusted by the pipe. A vent control device (not shown) is connected to the two gas vent ports 9 by piping, and the gas in the transfer chamber 2 is sucked and exhausted from the gas vent port 9 under the control of the vent control device. I have.

A method of manufacturing a semiconductor wafer using the semiconductor wafer manufacturing apparatus of the present embodiment configured as described above will be described in time series.

First, the semiconductor wafer W which has been subjected to steps including removal of a surface oxide film, polishing and the like is carried into the cleaning chamber 1, and the gate 12a is closed. This semiconductor wafer W
Then, the final cleaning process is performed in the cleaning room 1 by a predetermined method. Next, a drying process is performed in which the finally cleaned semiconductor wafer W is rotated at a high speed for a predetermined time in a predetermined position in the cleaning chamber 1 to scatter and remove water droplets attached to the wafer W. As a result, most of the water droplets attached to the wafer W are removed. When the drying process is completed, the gate 12a is opened.

Next, the robot hand 5 is moved to a predetermined position in the cleaning chamber 1 by the robot arm 4 and the semiconductor wafer W after the final cleaning is placed on the lift pins 10 of the robot hand 5.
Put. At this time, the heater 7 on the robot hand 5 is turned off.
N and heat to about 200-300 ° C. At the same time, the inert gas is injected from the injection port 13 of the quartz 6 covering the heater 7 by the inert gas supply device. And
The semiconductor wafer W held by the robot hand 5 is transferred from the cleaning chamber 1 into the transfer chamber 2 by the robot arm 4, the gate 12 a is closed thereafter, the inert gas is introduced from the injector port 8, and the gas vent port 9 is used. Start suction and exhaust. As a result, a gas flow of the inert gas from the injector port 8 to the gas vent port 9 is formed in the transfer chamber 2.

Next, the semiconductor wafer W is transferred to the epitaxial growth furnace 3 by the robot arm 4 while being held by the robot hand 5. At this time, since the semiconductor wafer W is heated from below by the heater 7, water droplets remaining on the wafer surface, oxygen atoms, oxygen molecules, water molecules, and the like adsorbed on the wafer surface evaporate by heating, and the semiconductor wafer W is cleaned. Moisture and the like that could not be removed only by the drying treatment in the chamber 1 can be completely removed during transportation. In addition, since the inert gas is constantly jetted from the jet port 13 of the quartz 6, the moisture and the like evaporated from the wafer W are kept away from the wafer W by jetting the inert gas. On the other hand, since a gas flow of an inert gas is formed in the transfer chamber 2, moisture or the like evaporated from the wafer W is sucked and exhausted from the gas vent port 9 by this gas flow, and
The inside is purged with an inert gas. Therefore, the water once removed from the wafer W, the oxygen atoms adsorbed on the wafer surface,
Oxygen molecules, water molecules, and the like do not adhere to the wafer W again, and water and the like can be completely removed.

When the wafer W is transported to the vicinity of the epitaxial growth furnace 3, the injection of the inert gas from the injection port 13 is performed.
The supply of the inert gas from the injector port 8 and the suction and exhaust from the gas vent port 9 are stopped, and the gate 12
Release b. Then, the wafer W is transported by the robot arm 4 to a position where the susceptor 14 is set in the epitaxial growth furnace 3, and is placed on the susceptor 14 from the robot hand 5. Thereafter, the robot hand 5 from which the wafer W has been removed is returned into the transfer chamber 2, and the gate 12b is closed. Thus, the inside of the epitaxial growth furnace 3 is in a sealed state.

The inside of the epitaxial growth furnace 3 is previously heated to 700 ° C. by the infrared lamp 16 while the wafer W is being transferred.
It is heated to a residual heat temperature of about 800 ° C. On the other hand, the wafer W is heated to 200 ° C. to 300 ° C. by a drying process by heating the heater 7 during the transfer. For this reason,
A rapid temperature change does not occur in the wafer W, and the occurrence of thermal deformation and the like can be prevented.

After the gate 12b is closed, the inside of the epitaxial growth furnace 3 is moved about 1100
Heat up to 1200C. Then, a reaction gas is introduced from the reaction gas injector port 17. At this time, an epitaxial film grows on the wafer surface by thermal decomposition and reduction of the reaction gas, and an epitaxial wafer W is manufactured.

As described above, in the semiconductor wafer manufacturing apparatus according to the present embodiment, while the semiconductor wafer W is being transferred from the cleaning chamber 1 to the epitaxial growth furnace 3, the water adhering to the wafer is removed.
Since oxygen atoms, oxygen molecules, and water molecules can be completely removed, a high-quality semiconductor wafer can be manufactured without forming a watermark on the wafer. Further, by heating the wafer during the transfer, the drying process in the cleaning chamber 1 can be performed efficiently, and the production efficiency of the semiconductor wafer can be improved.

In the semiconductor wafer manufacturing apparatus according to this embodiment, the heater 7 provided on the robot hand 5 is used as a heating means, but it is needless to say that the present invention is not limited to this. As the heating means, for example, the moving height position of the wafer W on the inner wall surface of the transfer chamber or the wafer W on the bottom surface
A plurality of outlets for injecting hot air heated to a predetermined temperature may be provided in the transfer path, and the wafer W may be heated by injecting hot air to the wafer W being transferred.

[0048]

As described above, according to the present invention, since the transfer means is provided with the heating means for heating the semiconductor wafer substrate being transferred to a predetermined temperature, the transfer of moisture and the like adhering to the semiconductor wafer after the final cleaning is carried out. This has the effect that a high-quality semiconductor wafer free of crystal defects by completely removing the inside can be manufactured. Further, in the present invention, by heating the wafer during the transfer, the drying process can be efficiently performed by the cleaning means, and the production efficiency of the semiconductor wafer can be improved.

Further, according to the present invention, since the heating means is provided with gas injection means for injecting an inert gas heated to a predetermined temperature condition to the semiconductor wafer substrate being transported, the heating means once heats the wafer. It is possible to prevent the removed water and the like from re-adhering to the wafer, and to produce a semiconductor wafer of higher quality.

Since the present invention is provided with temperature adjusting means for adjusting the heating temperature of the semiconductor wafer substrate being transported by the heating means, the temperature adjusting means adjusts the amount of water and the like adhering to the semiconductor wafer and the distance along the transport path. By setting the heating temperature arbitrarily, there is an effect that the process of manufacturing a semiconductor wafer can be made more efficient.

According to the present invention, the transfer means includes a transfer chamber communicating with the cleaning means and the processing apparatus, and the transfer chamber is supplied with an inert gas and exhaust means for discharging moisture removed from the semiconductor wafer substrate. Therefore, water and the like removed from the wafer are purged with an inert gas to prevent re-adhesion to the wafer, thereby producing an effect that a higher quality semiconductor wafer can be manufactured.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of a semiconductor wafer manufacturing apparatus according to an embodiment.

FIG. 2 is an enlarged view of a robot hand, a robot arm, and a heater covered with quartz according to the embodiment.

FIG. 3 is a plan view of a heater covered with quartz according to the embodiment.

FIG. 4 is a plan view of a heater covered with quartz having another outer shape according to the embodiment.

[Explanation of symbols]

 1: Cleaning chamber 2: Transfer chamber 3: Epitaxial growth furnace 4: Robot arm 5: Robot hand 6: Quartz 7: Heater 8: Inert gas injector port 9: Inert gas vent port 10: Lift pin 11: Four-axis robot 12a, 12b : Gate 13: Injection port 14: Susceptor 15: Susceptor rotating support 16: Infrared lamp 17: Reactant gas injector port 18: Reactant gas vent port

 ────────────────────────────────────────────────── ─── Continuing from the front page (72) Inventor Shinji Nakahara 555 Nakanoya, Annaka City, Gunma Prefecture 1 Inside Super Silicon Laboratories, Inc.

Claims (5)

[Claims] In a carrying step of carrying out final cleaning of a semiconductor wafer substrate cut out of a semiconductor single crystal, and carrying out the finally washed semiconductor wafer substrate from a cleaning chamber and carrying it to a processing apparatus for performing the next step, A method of manufacturing a semiconductor wafer, comprising a heating step of heating a semiconductor wafer substrate to be heated to a predetermined temperature. 2. A cleaning means for final cleaning a semiconductor wafer substrate cut from a semiconductor single crystal before epitaxial growth, and storing the final cleaned semiconductor wafer substrate.
Alternatively, in a semiconductor wafer manufacturing apparatus having a processing apparatus for performing the next step and a transfer means for transferring the semiconductor wafer substrate that has been finally cleaned from the cleaning means to the processing apparatus, the transfer means includes a semiconductor wafer substrate being transferred. And a heating means for heating the semiconductor wafer to a predetermined temperature. 3. The heating device according to claim 2, wherein said heating means includes a gas injection means for injecting an inert gas heated to a predetermined temperature condition to the semiconductor wafer substrate being transported. Semiconductor wafer manufacturing equipment. 4. The semiconductor wafer manufacturing apparatus according to claim 2, wherein said heating means further includes a temperature adjusting means for adjusting a heating temperature of the semiconductor wafer substrate being transported. 5. The transfer unit further includes a transfer chamber communicating with the cleaning unit and the processing apparatus, wherein the transfer chamber is filled with an inert gas and water removed from the semiconductor wafer substrate. The semiconductor wafer manufacturing apparatus according to claim 3, further comprising an exhaust unit that exhausts air.