JPH11244686A - Vacuum process apparatus - Google Patents
Vacuum process apparatusInfo
- Publication number
- JPH11244686A JPH11244686A JP5176798A JP5176798A JPH11244686A JP H11244686 A JPH11244686 A JP H11244686A JP 5176798 A JP5176798 A JP 5176798A JP 5176798 A JP5176798 A JP 5176798A JP H11244686 A JPH11244686 A JP H11244686A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- gas
- piping
- atmosphere
- gas supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は真空処理装置に係
り、特に内部が大気開放されるものに好適な真空処理装
置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum processing apparatus, and more particularly to a vacuum processing apparatus suitable for an apparatus whose inside is open to the atmosphere.
【0002】[0002]
【従来の技術】従来、試料裏面にガスを供給して試料の
処理を行う真空処理装置においては、試料台に設けられ
たガス配管内の異物付着を低減する方法として、例え
ば、特開平5―245360号公報に記載のように、ガ
ス配管内に不活性ガスを供給することによって、残留ガ
スを除去して反応生成物を減少させるという方法が知ら
れていた。2. Description of the Related Art Conventionally, in a vacuum processing apparatus for processing a sample by supplying a gas to the back surface of the sample, a method for reducing the adhesion of foreign matter in a gas pipe provided on a sample stage is disclosed in, for example, Japanese Patent Application Laid-Open No. H5- As described in Japanese Patent No. 245360, a method has been known in which an inert gas is supplied into a gas pipe to remove a residual gas and reduce a reaction product.
【0003】[0003]
【発明が解決しようとする課題】上記従来技術における
真空処理装置は、真空処理、例えば、プラズマ処理によ
って汚染された真空処理室内を洗浄する際またはメンテ
ナンス等の際に、処理室の大気開放時に、試料を冷却す
る目的で試料台に設けたガス供給口へ試料台の洗浄に用
いた液体が侵入し、この液体の除去または処理室を真空
状態へ復帰させるまでに多くの時間を必要とするという
問題があった.本発明の目的は、大気開放時の試料台に
設けたガス供給口への異物の侵入または付着を防ぎ、迅
速な処理再開を行うことのできる真空処理装置を提供す
ることにある。The vacuum processing apparatus according to the prior art described above is used for cleaning a vacuum processing chamber contaminated by a vacuum processing, for example, a plasma processing, or for maintenance or the like, when the processing chamber is opened to the atmosphere. The liquid used for cleaning the sample table enters the gas supply port provided on the sample table for the purpose of cooling the sample, and it takes a lot of time to remove this liquid or return the processing chamber to a vacuum state. There was a problem. An object of the present invention is to provide a vacuum processing apparatus capable of preventing foreign matter from entering or adhering to a gas supply port provided on a sample stage when the sample is opened to the atmosphere and capable of promptly restarting processing.
【0004】[0004]
【課題を解決するための手段】上記目的は、真空処理室
と、該真空処理室内に設けられ被処理物を配置可能な試
料台とを具備し、該試料台に配置された被処理物の裏面
にガスを供給するガス供給口を該試料台に設け、真空処
理室内の大気開放時にガス供給口から無害ガスを流出さ
せると共に、該無害ガスを加熱するガス加熱手段を設け
ることにより、達成される。SUMMARY OF THE INVENTION An object of the present invention is to provide a vacuum processing chamber, and a sample table provided in the vacuum processing chamber and on which a processing object can be placed. This is achieved by providing a gas supply port for supplying a gas to the back surface of the sample stage, causing a harmless gas to flow out of the gas supply port when the vacuum processing chamber is open to the atmosphere, and providing a gas heating means for heating the harmless gas. You.
【0005】[0005]
【発明の実施の形態】本発明の一実施例を図1により説
明する。図1は本発明の一実施形態を示す真空処理装置
の処理室を示した図である。図1において、1は被処理
物である試料(図示省略)を設置する試料台、1aは試料
の設置面、2は試料台を支持するベースである.また、
3は真空処理室、4は真空処理室内部である。5はベー
ス2および試料台1を試料設置面1aまで貫通する配
管、6は配管5と配管7を遮断するバルブ、8は処理中
に試料裏面にガス、この場合、伝熱ガスまたは冷却ガス
を供給するためのガス供給源、9は配管5と配管10を
遮断するバルブ、11は無害ガス、例えば、窒素ガス等
の無害ガス供給源、12は11より供給される窒素ガス
を加熱するためのヒータである。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described with reference to FIG. FIG. 1 is a diagram showing a processing chamber of a vacuum processing apparatus showing one embodiment of the present invention. In FIG. 1, reference numeral 1 denotes a sample table on which a sample (not shown) to be processed is set, 1a denotes a sample setting surface, and 2 denotes a base for supporting the sample table. Also,
Reference numeral 3 denotes a vacuum processing chamber, and reference numeral 4 denotes an inside of the vacuum processing chamber. 5 is a pipe that penetrates the base 2 and the sample table 1 to the sample setting surface 1a, 6 is a valve that shuts off the pipe 5 and the pipe 7, 8 is a gas on the back of the sample during processing, in this case, a heat transfer gas or a cooling gas. A gas supply source for supplying, 9 is a valve for shutting off the pipe 5 and the pipe 10, 11 is a harmless gas supply source such as a harmless gas, for example, nitrogen gas, and 12 is a nitrogen gas supplied from the 11 for heating. It is a heater.
【0006】本装置のような真空処理装置では、試料の
処理を行っている間、処理室内部4は真空もしくは減圧
雰囲気に保持される。このため、試料の設置面1aと設
置面1a上に設置された試料(図示省略)との間には真空
断熱状態となり、熱の伝達が悪くなる。したがって、試
料処理の間に試料に熱が加わる場合、試料の温度を制御
することができない。そこで、試料台1を試料の設置面
1aまで貫通する配管5を設け、バルブ6を開放し、配
管5を通して試料の設置面1aと理試料の間に所定圧力
の伝熱ガスを供給し、伝熱ガスによる熱の伝達を可能と
し、試料の温度を制御可能としている。尚、ここで、図
示を省略しているが、試料台1は所定温度に制御されて
いる。In a vacuum processing apparatus such as the present apparatus, the inside of the processing chamber 4 is maintained in a vacuum or reduced-pressure atmosphere while the sample is being processed. Therefore, a vacuum insulation state is provided between the sample installation surface 1a and the sample (not shown) installed on the installation surface 1a, and heat transfer is deteriorated. Therefore, if heat is applied to the sample during sample processing, the temperature of the sample cannot be controlled. Therefore, a pipe 5 penetrating the sample table 1 to the sample setting surface 1a is provided, a valve 6 is opened, and a heat transfer gas of a predetermined pressure is supplied between the sample setting surface 1a and the physical sample through the pipe 5, and The heat can be transmitted by the hot gas, and the temperature of the sample can be controlled. Here, although not shown, the sample stage 1 is controlled to a predetermined temperature.
【0007】真空処理室3内部の洗浄またはメンテナン
ス等のために処理室内部4が大気開放される場合、配管
5内部に大気中の水分や個体等の異物が侵入し付着する
可能性がある。また、洗浄の際には、試料の設置面1a
は作業者が純水等を用いて洗浄を行うため、誤って純水
を配管5内部へ侵入させる恐れもある。これら配管5内
部に侵入した異物はその排出が困難であり、メンテナン
ス後、処理室内部4を真空引きする際にアウトガスとし
て処理室内部に排出され真空度を下げることとなる。こ
のため、処理を再開するまでに多くの時間を必要とす
る。When the inside of the processing chamber 4 is opened to the atmosphere for cleaning or maintenance of the inside of the vacuum processing chamber 3, there is a possibility that foreign matter such as moisture or solids in the air may enter and adhere to the inside of the pipe 5. When washing, the sample setting surface 1a
Since the operator performs cleaning using pure water or the like, there is a possibility that pure water may accidentally enter the inside of the pipe 5. It is difficult to discharge the foreign matter that has entered the inside of the pipe 5, and after the maintenance, when the inside of the processing chamber 4 is evacuated, the foreign matter is discharged into the processing chamber as outgas to lower the degree of vacuum. For this reason, a lot of time is required until the processing is restarted.
【0008】本装置では、大気開放中、バルブ6を閉
め、バルブ9を開放して配管5内に加熱した窒素ガスを
通し、配管5内部への異物の侵入を防ぐとともに付着し
てしまった異物を効率よく排出するようにする。これに
より、メンテナンス後の真空引き時にアウトガスの発生
が少なく、迅速に処理を再開することが可能である。In the present apparatus, the valve 6 is closed and the valve 9 is opened during the opening to the atmosphere to allow the heated nitrogen gas to flow through the pipe 5 to prevent foreign substances from entering the inside of the pipe 5 and to prevent foreign substances from adhering. To be discharged efficiently. Thus, outgassing is less likely to occur during evacuation after maintenance, and processing can be quickly resumed.
【0009】[0009]
【発明の効果】本発明によれば、メンテナンス等による
大気開放後において、アウトガスの発生を抑えることが
できるので、処理再開までの時間を短縮できるという効
果がある。According to the present invention, the occurrence of outgas can be suppressed after opening to the atmosphere due to maintenance or the like, so that there is an effect that the time until the processing is restarted can be shortened.
【図1】本発明の真空処理装置の一実施例を示すメ構成
図である。FIG. 1 is a configuration diagram showing an embodiment of a vacuum processing apparatus according to the present invention.
1…試料台、1a…試料の設置面、2…ベース、3…真
空処理室、4…真空処理室内部、5…配管、6…バル
ブ、7…配管、8…ガス供給源、9…バルブ、10…配
管、11…無害ガス供給源、12…ヒータ。DESCRIPTION OF SYMBOLS 1 ... Sample stand, 1a ... Sample installation surface, 2 ... Base, 3 ... Vacuum processing chamber, 4 ... Inside vacuum processing chamber, 5 ... Piping, 6 ... Valve, 7 ... Piping, 8 ... Gas supply source, 9 ... Valve Reference numeral 10: piping, 11: harmless gas supply source, 12: heater.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 吉開 元彦 山口県下松市大字東豊井794番地 日立テ クノエンジニアリング株式会社笠戸事業所 内 (72)発明者 阿部 敬治 山口県下松市大字東豊井794番地 日立笠 戸エンジニアリング株式会社内 (72)発明者 工藤 卓史 山口県下松市大字東豊井794番地 日立テ クノエンジニアリング株式会社笠戸事業所 内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Motohiko Yoshikai 794, Higashi-Toyoi, Katsumatsu-shi, Yamaguchi Prefecture Hitachi Techno Engineering, Inc. Hitachi Kasado Engineering Co., Ltd. (72) Inventor Takushi Kudo Kashimatsu City, Yamaguchi Prefecture
Claims (1)
被処理物を配置可能な試料台とを具備し、該試料台に配
置された被処理物の裏面にガスを供給するガス供給口を
該試料台に設け、前記真空処理室内の大気開放時に前記
ガス供給口から無害ガスを流出させると共に、前記無害
ガスを加熱するガス加熱手段を設けたことを特徴とする
真空処理装置。1. A gas supply, comprising: a vacuum processing chamber; and a sample table provided in the vacuum processing chamber and on which a processing object can be arranged, and supplying a gas to a back surface of the processing object disposed on the sample table. A vacuum processing apparatus, further comprising a gas heating means for providing an opening to the sample stage, causing the harmless gas to flow out of the gas supply port when the vacuum processing chamber is opened to the atmosphere, and heating the harmless gas.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5176798A JPH11244686A (en) | 1998-03-04 | 1998-03-04 | Vacuum process apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5176798A JPH11244686A (en) | 1998-03-04 | 1998-03-04 | Vacuum process apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH11244686A true JPH11244686A (en) | 1999-09-14 |
Family
ID=12896111
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5176798A Pending JPH11244686A (en) | 1998-03-04 | 1998-03-04 | Vacuum process apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH11244686A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019053836A1 (en) * | 2017-09-14 | 2019-03-21 | 株式会社日立ハイテクノロジーズ | Plasma processing device and wet cleaning method |
-
1998
- 1998-03-04 JP JP5176798A patent/JPH11244686A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019053836A1 (en) * | 2017-09-14 | 2019-03-21 | 株式会社日立ハイテクノロジーズ | Plasma processing device and wet cleaning method |
KR20190030587A (en) | 2017-09-14 | 2019-03-22 | 가부시키가이샤 히다치 하이테크놀로지즈 | Plasma processing apparatus and atmosphere opening method thereof |
JP2020065079A (en) * | 2017-09-14 | 2020-04-23 | 株式会社日立ハイテク | Plasma processing device and method for exposure to atmosphere |
KR20200067776A (en) | 2017-09-14 | 2020-06-12 | 주식회사 히타치하이테크 | Plasma processing apparatus and atmosphere opening method thereof |
US10886106B2 (en) | 2017-09-14 | 2021-01-05 | Hitachi High-Tech Corporation | Plasma processing apparatus and method for venting a processing chamber to atmosphere |
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