JP3869670B2

JP3869670B2 - Substrate processing method and substrate processing apparatus

Info

Publication number: JP3869670B2
Application number: JP2001082938A
Authority: JP
Inventors: 公二長谷川
Original assignee: Screen Holdings Co Ltd; Dainippon Screen Manufacturing Co Ltd
Current assignee: Screen Holdings Co Ltd; Dainippon Screen Manufacturing Co Ltd
Priority date: 2001-03-22
Filing date: 2001-03-22
Publication date: 2007-01-17
Anticipated expiration: 2021-03-22
Also published as: JP2002280352A

Description

【０００１】
【発明の属する技術分野】
この発明は、半導体ウエハ、液晶表示装置等のフラットパネルディスプレイ用のガラス基板、フォトマスク用ガラス基板、光ディスク用基板などの各種基板を純水等のリンス液でリンス処理した後に乾燥処理する基板処理方法、特に、処理槽内に貯留されたリンス液中から基板を引き上げあるいは処理槽内からリンス液を排出し、基板に対しイソプロピルアルコール（ＩＰＡ）等の有機溶剤の蒸気を供給して基板を乾燥させる基板処理方法、ならびに、その方法を実施するために使用される基板処理装置に関する。
【０００２】
【従来の技術】
半導体ウエハ等の基板を、処理槽内に収容されたリンス液、例えば純水中に浸漬させてリンス処理した後に乾燥処理する方法として、例えば特開平１０−２０９１０９号公報等には、処理槽内に貯留された純水中に基板を浸漬させてリンス処理した後に、処理槽内の純水の液面を不活性ガス、例えば窒素ガスの雰囲気にしつつ基板を純水中から引き上げ、窒素ガス等の不活性ガスをキャリアガスとして水溶性の有機溶剤、例えばＩＰＡの蒸気を、純水中から引き上げられた基板の周囲へ供給し、基板の表面上の気液界面で、ＩＰＡ蒸気を凝縮させて基板表面に付着した純水をＩＰＡに置換させた後、基板が収容された密閉チャンバ内を真空排気して密閉チャンバの内部を減圧状態にすることにより、基板の表面に凝縮したＩＰＡを蒸発させて、基板を速やかに乾燥させる、といった方法が開示されている。また、上記公報には、基板の表面でＩＰＡ蒸気が凝縮しやすくなるように基板の温度を低くするため、処理槽内の純水の液面を窒素ガス雰囲気にする際に、冷却器により窒素ガスを０℃〜常温、より好ましくは５℃程度の温度に冷却して、その冷却された窒素ガスをノズルから純水の液面に対して吹き付けることが記載されている。
【０００３】
【発明が解決しようとする課題】
特開平１０−２０９１０９号公報に記載されている装置では、基板のリンス処理が行われる処理槽の上部開口面を囲み窒素ガス雰囲気にされる空間とＩＰＡ雰囲気とされ基板の乾燥処理が行われる乾燥室内とが、扉によって開通および遮断可能に隔てられており、純水中から引き上げられた基板は、窒素ガス雰囲気を介してＩＰＡ雰囲気とされた乾燥室内に移送され、その後に、処理槽の上部開口面を囲む空間と乾燥室内とは扉によって遮断され、その状態で基板の乾燥が行われる。このような構成であるため、処理槽内の純水の液面にはＩＰＡ蒸気が供給されない。しかしながら、処理槽の上部開口面を囲む空間と乾燥室内とを扉によって隔て、扉を開閉して処理槽側の空間と乾燥室内と開通させたり遮断したりするのは、装置の構成が複雑となり制御も煩雑となる。
【０００４】
一方、上記したような扉を設けずに、処理槽内の純水中から引き上げた基板を、処理槽の上部開口面を囲む空間内で乾燥させるような構成の装置では、乾燥処理時に処理槽内の純水の液面にもＩＰＡ蒸気が供給されるので、純水中にＩＰＡの一部が溶け込むことになる。この純水中に溶け込むＩＰＡ量が多くなると、処理槽内の純水の液面にＩＰＡの濃度斑が発生する。この結果、基板面内における乾燥状態にばらつきを生じたり、デバイスパーティクルが発生したり、ＩＰＡによってデバイス上のレジストの溶解を生じたりする、といった不都合を生じる。基板の表面でＩＰＡ蒸気が凝縮しやすくなるように基板の温度を低くする目的で、処理槽内の純水の液面に対して冷却された窒素ガスを吹き付けたりすると、純水中に溶け込むＩＰＡ量が増加して、余計に上記不都合を生じやすくなる。
【０００５】
この発明は、以上のような事情に鑑みてなされたものであり、処理槽内に貯留されたリンス液中から露出させられた基板に対し有機溶剤の蒸気を供給して基板を乾燥させる場合において、リンス液中に溶け込む有機溶剤量を少なくして、リンス液の液面に有機溶剤の濃度斑が発生することを防止することができ、装置の構成や制御も比較的簡単である基板処理方法を提供すること、ならびに、その方法を好適に実施することができる基板処理装置を提供することを目的とする。
【０００６】
【課題を解決するための手段】
請求項１に係る発明は、処理槽内に貯留されたリンス液中に基板を浸漬させてリンス処理する工程と、前記処理槽内に貯留されたリンス液中から基板を露出させる工程と、前記処理槽内のリンス液中から露出させられる基板に対し有機溶剤の蒸気を供給して基板の表面で有機溶剤を凝縮させた後に、その有機溶剤を蒸発させて基板を乾燥処理する工程と、を含む基板処理方法において、前記処理槽内のリンス液中から基板を露出させる前から、前記処理槽内のリンス液の液面に対し加熱された不活性ガスを供給して、リンス液の液面を加熱するとともにリンス液の液面付近を不活性ガス雰囲気にし、その加熱された不活性ガスの供給を開始した後に、前記処理槽内のリンス液中から露出させられる基板に対し有機溶剤の蒸気を供給することを特徴とする。
【０００７】
請求項２に係る発明は、処理槽内に貯留されたリンス液中に基板を浸漬させてリンス処理する工程と、前記処理槽内に貯留されたリンス液中から基板を露出させる工程と、前記処理槽内のリンス液中から露出させられる基板に対し有機溶剤の蒸気を供給して基板の表面で有機溶剤を凝縮させた後に、その有機溶剤を蒸発させて基板を乾燥処理する工程と、を含む基板処理方法において、前記処理槽内のリンス液中から基板を露出させる前から、前記処理槽内のリンス液の液面へ光を照射してリンス液の液面を加熱するとともに、前記処理槽内のリンス液の液面に対し不活性ガスを供給してリンス液の液面付近を不活性ガス雰囲気にし、前記処理槽内のリンス液の液面への光の照射およびリンス液の液面に対する不活性ガスの供給を開始した後に、前記処理槽内のリンス液中から露出させられる基板に対し有機溶剤の蒸気を供給することを特徴とする。
【０００８】
【０００９】
【００１０】
請求項３に係る発明は、リンス液が貯留されそのリンス液中に基板が浸漬させられてリンス処理される処理槽と、前記処理槽内に貯留されたリンス液中から基板を露出させる基板露出手段と、前記処理槽内のリンス液中から露出させられる基板に対して有機溶剤の蒸気を供給する蒸気供給手段と、前記処理槽内のリンス液の液面に対して不活性ガスを供給するガス供給手段、および、前記ガス供給手段によって供給される不活性ガスを加熱するヒータを有し、前記処理槽内のリンス液の液面を加熱する加熱手段と、前記基板露出手段によって前記処理槽内のリンス液中から基板が露出させられる前に前記加熱手段を作動させ、前記加熱手段を作動させた後に前記蒸気供給手段による有機溶剤の蒸気の供給を開始するように制御する制御手段と、を備えたことを特徴とする。
【００１１】
請求項４に係る発明は、リンス液が貯留されそのリンス液中に基板が浸漬させられてリンス処理される処理槽と、前記処理槽内に貯留されたリンス液中から基板を露出させる基板露出手段と、前記処理槽内のリンス液中から露出させられる基板に対して有機溶剤の蒸気を供給する蒸気供給手段と、前記処理槽内のリンス液の液面へ光を照射する加熱用ランプを有し、前記処理槽内のリンス液の液面を加熱する加熱手段と、前記処理槽内のリンス液の液面に対して不活性ガスを供給するガス供給手段と、前記基板露出手段によって前記処理槽内のリンス液中から基板が露出させられる前に前記加熱手段を作動させるとともに前記ガス供給手段による不活性ガスの供給を開始し、前記加熱手段を作動させるとともに前記ガス供給手段による不活性ガスの供給を開始した後に前記蒸気供給手段による有機溶剤の蒸気の供給を開始するように制御する制御手段と、を備えたことを特徴とする。
【００１２】
【００１３】
【００１４】
請求項１に係る発明の基板処理方法によると、処理槽内のリンス液中から基板が露出させられる前から、処理槽内のリンス液の液面に対し加熱された不活性ガスが供給されることにより、リンス液の液面および液面付近の温度が上昇するとともに、リンス液の液面付近が不活性ガス雰囲気となる。このように、処理槽内のリンス液中から基板が露出させられる際にリンス液の液面および液面付近の温度が上昇するので、リンス液中に溶け込む有機溶剤量が少なくなって、リンス液の液面に有機溶剤の濃度斑が発生することが抑えられる。このとき、処理槽内のリンス液は処理槽上部から連続して溢れ出る状態にされるので、リンス液の液中温度が上昇することはない。したがって、リンス液中の基板の温度が上昇することはないので、リンス液中から露出させられた基板の表面への有機溶剤蒸気の凝縮は支障無く行われる。また、処理槽内のリンス液中から基板が露出させられる際にリンス液の液面付近が不活性ガス雰囲気となるので、リンス液の液面へ供給される有機溶剤の量が少なくなって、リンス液中に溶け込む有機溶剤量がより少なくなる。
【００１５】
請求項２に係る発明の基板処理方法によると、処理槽内のリンス液中から基板が露出させられる前から、処理槽内のリンス液の液面へ光が照射されることにより、輻射熱でリンス液の液面が加熱されてリンス液の液面および液面付近の温度が上昇するとともに、処理槽内のリンス液の液面に対し不活性ガスが供給されることにより、リンス液の液面付近が不活性ガス雰囲気となる。このように、処理槽内のリンス液中から基板が露出させられる際にリンス液の液面および液面付近の温度が上昇するので、リンス液中に溶け込む有機溶剤量が少なくなって、リンス液の液面に有機溶剤の濃度斑が発生することが抑えられる。このとき、処理槽内のリンス液は処理槽上部から連続して溢れ出る状態にされるので、リンス液の液中温度が上昇することはない。したがって、リンス液中の基板の温度が上昇することはないので、リンス液中から露出させられた基板の表面への有機溶剤蒸気の凝縮は支障無く行われる。また、処理槽内のリンス液中から基板が露出させられる際にリンス液の液面付近が不活性ガス雰囲気となるので、リンス液の液面へ供給される有機溶剤の量が少なくなって、リンス液中に溶け込む有機溶剤量がより少なくなる。
【００１６】
【００１７】
【００１８】
請求項３に係る発明の基板処理装置においては、基板露出手段によって処理槽内のリンス液中から基板が露出させられる前から、ヒータによって加熱された不活性ガスがガス供給手段によって処理槽内のリンス液の液面に対し供給されることにより、リンス液の液面および液面付近の温度が上昇するとともに、リンス液の液面付近が不活性ガス雰囲気となる。このように、処理槽内のリンス液中から基板が露出させられる際にリンス液の液面および液面付近の温度が上昇するので、リンス液中に溶け込む有機溶剤量が少なくなって、リンス液の液面に有機溶剤の濃度斑が発生することが抑えられる。このとき、処理槽内のリンス液は処理槽上部から連続して溢れ出る状態にされるので、リンス液の液中温度が上昇することはない。したがって、リンス液中の基板の温度が上昇することはないので、リンス液中から露出させられた基板の表面への有機溶剤蒸気の凝縮は支障無く行われる。また、処理槽内のリンス液中から基板が露出させられる際にリンス液の液面付近が不活性ガス雰囲気となるので、リンス液の液面へ供給される有機溶剤の量が少なくなって、リンス液中に溶け込む有機溶剤量がより少なくなる。
【００１９】
請求項４に係る発明の基板処理装置においては、基板露出手段によって処理槽内のリンス液中から基板が露出させられる前から、加熱用ランプから処理槽内のリンス液の液面へ光が照射されることにより、輻射熱でリンス液の液面が加熱されてリンス液の液面および液面付近の温度が上昇するとともに、ガス供給手段によって処理槽内のリンス液の液面に対し不活性ガスが供給されることにより、リンス液の液面付近を不活性ガス雰囲気となる。このように、処理槽内のリンス液中から基板が露出させられる際にリンス液の液面および液面付近の温度が上昇するので、リンス液中に溶け込む有機溶剤量が少なくなって、リンス液の液面に有機溶剤の濃度斑が発生することが抑えられる。このとき、処理槽内のリンス液は処理槽上部から連続して溢れ出る状態にされるので、リンス液の液中温度が上昇することはない。したがって、リンス液中の基板の温度が上昇することはないので、リンス液中から露出させられた基板の表面への有機溶剤蒸気の凝縮は支障無く行われる。また、処理槽内のリンス液中から基板が露出させられる際にリンス液の液面付近が不活性ガス雰囲気となるので、リンス液の液面へ供給される有機溶剤の量が少なくなって、リンス液中に溶け込む有機溶剤量がより少なくなる。
【００２０】
【００２１】
【００２２】
【発明の実施の形態】
以下、この発明の好適な実施形態について図面を参照しながら説明する。
【００２３】
図１は、この発明に係る基板処理方法を実施するのに使用される基板処理装置の概略構成の１例を示す模式図である。この基板処理装置は、リンス液、例えば純水が貯留されその純水中に基板Ｗが浸漬させられてリンス処理される処理槽１０、および、処理槽１０の周囲を取り囲む処理チャンバ１２を備えている。
【００２４】
処理槽１０は、その詳細な図示および説明を省略するが、下部に純水供給口を有するとともに上部に純水が溢れ出す溢流部を有し、底部に排水口が設けられている。処理チャンバ１２は、蓋（図示せず）を開閉させることにより基板Ｗの搬入および搬出を行うことができるともに密閉することが可能である。処理チャンバ１２の内部には、昇降駆動されるリフタ１４が配設されており、このリフタ１４は、処理チャンバ１２内へ搬入された基板Ｗを受け取って処理槽１０の内部へ搬入し、処理槽１０内で基板Ｗを支持し、処理が終わった基板Ｗを処理槽１０内から取り出す。また、処理チャンバ１２の底部には、気液排出口１６が設けられており、気液排出口１６に、開閉弁２０が介挿された排気管１８、および、開閉弁２４が介挿された排水管２２がそれぞれ連通している。
【００２５】
また、処理チャンバ１２内の上部には、蒸気供給ノズル２６が設けられている。蒸気供給ノズル２６には、不活性ガス、例えば窒素ガスをキャリアガスとして有機溶剤、例えばＩＰＡの蒸気を供給する蒸気供給管２８が連通して接続されており、蒸気供給管２８には、開閉弁３０が介在して設けられている。また、処理チャンバ１２の内部には、処理槽１０内の純水の液面に対して不活性ガス、例えば窒素ガスを供給するガス供給ノズル３２が設けられている。ガス供給ノズル３２には、窒素ガスの供給源に接続されたガス供給管３４が連通して接続されており、ガス供給管３４には、開閉弁３６が介在して設けられている。また、ガス供給管３４には、ヒータ３８が介在して設けられており、ガス供給管３４を通ってガス供給ノズル３２へ供給される窒素ガスをヒータ３８で加熱、例えば５０℃以上の温度に加熱することができるように構成されている。
【００２６】
また、排気管１８および排水管２２にそれぞれ介挿された開閉弁２０、２４の開閉動作、リフタ１４の昇降動作、ならびに、蒸気供給管２８およびガス供給管３４にそれぞれ介挿された開閉弁３０、３６の開閉動作を制御するために、図２に示すように、タイマ４２を具備した制御部４０が設けられている。
【００２７】
次に、上記した構成の基板処理装置を使用してリンス処理後に行われる基板の乾燥処理操作の１例について説明する。
【００２８】
処理槽１０内に貯留された純水中に基板Ｗが浸漬させられて基板Ｗのリンス処理が行われ、そのリンス処理が終了すると、ヒータ３８が駆動され、開閉弁３６が開かれて、ガス供給管３４を通ってガス供給ノズル３２へ５０℃以上の温度に加熱された窒素ガスが送られ、ガス供給ノズル３２から処理槽１０内の純水の液面に対し加熱された窒素ガスが供給される。これにより、処理槽１０内の純水の液面付近が窒素ガス雰囲気になり、また、純水の液面および液面付近の温度が上昇する。
【００２９】
加熱された窒素ガスの供給が開始された後、例えば窒素ガスの供給開始時から１０秒以上経過した後に、図３にタイムチャートを示すように、開閉弁３０が開かれ、窒素ガスをキャリアガスとしてＩＰＡ蒸気が蒸気供給管２８を通って蒸気供給ノズル２６へ送られ、蒸気供給ノズル２６から処理槽１０内へＩＰＡ蒸気が供給される。このとき、処理槽１０内の純水の液面付近は窒素ガス雰囲気となっており、また、純水の液面および液面付近の温度が上昇しているので、純水中へのＩＰＡ蒸気の溶け込みが抑えられる。したがって、処理槽１０内の純水の液面にＩＰＡの濃度斑が発生することはない。また、処理槽１０内の純水は、処理槽１０上部の溢流部から連続して溢れ出る状態にされるので、純水の液中温度が上昇することはなく、純水中の基板Ｗの温度は上昇しない。
【００３０】
ＩＰＡ蒸気の供給が開始された後、リフタ１４が駆動され、リフタ１４により基板Ｗが処理槽１０内の純水中からゆっくりと引き上げられる。そして、純水中から引き上げられた基板Ｗの表面では、ＩＰＡ蒸気が凝縮して、基板Ｗ表面に付着した純水がＩＰＡに置換されていく。基板Ｗが純水中から完全に引き上げられると、ガス供給管３４に介挿された開閉弁３６が閉じられ、加熱された窒素ガスの供給が停止される。その後に、蒸気供給管２８に介挿された開閉弁３０が閉じられ、処理チャンバ１２内へのＩＰＡ蒸気の供給が停止される。この時点では、基板Ｗの表面はＩＰＡによって完全に置換された状態となる。
【００３１】
リフタ１４により処理槽１０内の純水中から基板Ｗが完全に引き上げられると、処理槽１０内からの排水や窒素ガスによる処理チャンバ１２内のパージを行うなどした後、密閉された処理チャンバ１２の内部に基板Ｗを保持したまま、排気管１８を通して処理チャンバ１２の内部を真空排気し、処理チャンバ１２内に保持された基板Ｗを速やかに減圧乾燥させる。これにより、基板Ｗの表面からＩＰＡが完全に蒸発して除去され、基板Ｗの乾燥が終了する。基板Ｗの乾燥処理が終了すると、真空排気を停止した後、処理チャンバ１２の蓋を開けて基板Ｗを処理チャンバ１２内から搬出する。以上の一連の処理動作は、制御部４０によって制御される。
【００３２】
上記した実施形態では、処理槽１０内の純水の液面を加熱するのに、ガス供給ノズル３２から処理槽１０内の純水の液面に対し加熱された窒素ガスを供給するようにしたが、図４に示すように、処理チャンバ１２の内部に加熱用ランプ４４を配設し、その加熱用ランプ４４から処理槽１０内の純水の液面に向かって近赤外光〜遠赤外光を照射し、輻射熱によって純水の液面を加熱するような装置構成とすることもできる。図４中において、図１で使用した符号と同一符号を付した各部材は、図１に示した装置に関して説明した上記各部材と同一機能を有するものである。また、図４に示した基板処理装置において、ガス供給ノズル３２から処理槽１０内の純水の液面に対し常温の窒素ガスを供給するようにする。
【００３３】
また、上記実施形態では、リンス処理が終了した基板Ｗをリフタ１４によって引き上げることにより、処理槽１０内の純水中から基板Ｗを露出させるようにしたが、リンス処理後の基板Ｗを処理槽１０内で静止させたままにし、処理槽１０内からゆっくりと排水して処理槽１０内の純水の液面を低下させることにより、純水中から基板Ｗを露出させるようにしてもよい。
【００３４】
【発明の効果】
請求項１および請求項２に係る各発明の基板処理方法により、処理槽内に貯留されたリンス液中から露出させられた基板に対し有機溶剤の蒸気を供給して基板を乾燥させるときは、リンス液中に溶け込む有機溶剤量を少なくして、リンス液の液面に有機溶剤の濃度斑が発生することを防止することができる。このため、基板面内における乾燥状態にばらつきを生じたり、デバイスパーティクルが発生したり、デバイス上のレジストの溶解を生じたりする、といった不都合を無くすことができる。そして、装置の構成や制御も比較的簡単である。
【００３５】
【００３６】
【００３７】
【００３８】
請求項３および請求項４に係る各発明の基板処理装置を使用すると、リンス液中に溶け込む有機溶剤量を少なくして、リンス液の液面に有機溶剤の濃度斑が発生することを防止することができ、このため、基板面内における乾燥状態にばらつきを生じたり、デバイスパーティクルが発生したり、デバイス上のレジストの溶解を生じたりする、といった不都合を無くすことができる。そして、装置の構成や制御も比較的簡単である。
【図面の簡単な説明】
【図１】この発明に係る基板処理方法を実施するのに使用される基板処理装置の概略構成の１例を示す模式図である。
【図２】図１に示した基板処理装置の制御系の概略構成を示す図である。
【図３】図１に示した基板処理装置を使用してリンス処理後に行われる基板の乾燥処理操作のタイムチャートである。
【図４】この発明に係る基板処理装置の概略構成の別の例を示す模式図である。
【符号の説明】
１０処理槽
１２処理チャンバ
１４リフタ
１６気液排出口
１８排気管
２０、２４、３０、３６開閉弁
２２排水管
２６蒸気供給ノズル
２８蒸気供給管
３２ガス供給ノズル
３４ガス供給管
３８ヒータ
４０制御部
Ｗ基板[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a substrate treatment in which various substrates such as semiconductor wafers, glass substrates for flat panel displays such as liquid crystal display devices, glass substrates for photomasks, and substrates for optical disks are rinsed with a rinse solution such as pure water and then dried. Method, in particular, pulling up the substrate from the rinsing liquid stored in the processing tank or discharging the rinsing liquid from the processing tank, and supplying the vapor of an organic solvent such as isopropyl alcohol (IPA) to the substrate to dry the substrate. The present invention relates to a substrate processing method to be performed, and a substrate processing apparatus used for performing the method.
[0002]
[Prior art]
As a method of drying a substrate after immersing a substrate such as a semiconductor wafer in a rinsing liquid contained in a processing tank, for example, pure water and rinsing, for example, JP-A-10-209109 discloses After immersing the substrate in pure water stored in the substrate and rinsing, the substrate is lifted from the pure water while keeping the surface of the pure water in the treatment tank in an atmosphere of an inert gas, for example, nitrogen gas. A water-soluble organic solvent, for example, IPA vapor is supplied to the periphery of the substrate pulled up from the pure water using the inert gas as a carrier gas, and the IPA vapor is condensed at the gas-liquid interface on the surface of the substrate. After replacing pure water adhering to the substrate surface with IPA, the inside of the sealed chamber containing the substrate is evacuated and the inside of the sealed chamber is decompressed to evaporate the IPA condensed on the surface of the substrate. The Drying quickly the substrate, a method is disclosed such. In the above publication, the temperature of the substrate is lowered so that the IPA vapor is easily condensed on the surface of the substrate. It is described that the gas is cooled to a temperature of 0 ° C. to room temperature, more preferably about 5 ° C., and the cooled nitrogen gas is blown from the nozzle to the pure water level.
[0003]
[Problems to be solved by the invention]
In the apparatus described in Japanese Patent Application Laid-Open No. 10-209109, drying is performed in which a substrate is subjected to a drying process in which an IPA atmosphere and a space surrounding an upper opening surface of a processing tank in which a substrate rinsing process is performed are made into a nitrogen gas atmosphere The substrate is separated from the interior by a door so that it can be opened and shut off, and the substrate pulled up from the pure water is transferred to a drying chamber having an IPA atmosphere via a nitrogen gas atmosphere. The space surrounding the opening surface and the drying chamber are blocked by a door, and the substrate is dried in this state. Since it is such a structure, IPA vapor | steam is not supplied to the liquid level of the pure water in a processing tank. However, the space surrounding the upper opening surface of the treatment tank and the drying chamber are separated by a door, and the door is opened and closed to open and close the space on the treatment tank side and the drying chamber. Control is also complicated.
[0004]
On the other hand, in the apparatus configured to dry the substrate pulled up from the pure water in the processing tank without providing the door as described above in the space surrounding the upper opening surface of the processing tank, the processing tank is used during the drying process. Since IPA vapor is also supplied to the liquid surface of the pure water, a part of IPA is dissolved in the pure water. When the amount of IPA dissolved in the pure water increases, IPA concentration spots are generated on the surface of the pure water in the treatment tank. As a result, there are inconveniences such as variations in the dry state in the substrate surface, generation of device particles, and dissolution of the resist on the device by IPA. For the purpose of lowering the temperature of the substrate so that the IPA vapor is likely to condense on the surface of the substrate, when the cooled nitrogen gas is blown against the pure water level in the treatment tank, the IPA that dissolves in the pure water. The amount increases, and the above disadvantages are likely to occur.
[0005]
The present invention has been made in view of the circumstances as described above. In the case where the substrate is exposed by supplying vapor of an organic solvent to the substrate exposed from the rinse liquid stored in the treatment tank, the substrate is dried. The substrate processing method can reduce the amount of the organic solvent dissolved in the rinsing liquid to prevent the organic solvent concentration spots from being generated on the surface of the rinsing liquid, and the configuration and control of the apparatus are relatively simple. And a substrate processing apparatus capable of suitably carrying out the method.
[0006]
[Means for Solving the Problems]
The invention according to claim 1 is a step of immersing a substrate in a rinse liquid stored in a treatment tank to perform a rinse treatment, a step of exposing the substrate from the rinse liquid stored in the treatment tank, Supplying a vapor of an organic solvent to the substrate exposed from the rinse liquid in the treatment tank to condense the organic solvent on the surface of the substrate, and then evaporating the organic solvent to dry the substrate. In the substrate processing method including, before exposing the substrate from the rinsing liquid in the processing tank, the heated inert gas is supplied to the liquid level of the rinsing liquid in the processing tank, and the liquid level of the rinsing liquid And the vicinity of the liquid surface of the rinsing liquid is made an inert gas atmosphere, and after the supply of the heated inert gas is started, the organic solvent is exposed to the substrate exposed from the rinsing liquid in the treatment tank. that supplies the steam And butterflies.
[0007]
The invention according to claim 2 includes a step of immersing the substrate in a rinsing liquid stored in a processing tank and a rinsing process, a step of exposing the substrate from the rinsing liquid stored in the processing tank, Supplying a vapor of an organic solvent to the substrate exposed from the rinse liquid in the treatment tank to condense the organic solvent on the surface of the substrate, and then evaporating the organic solvent to dry the substrate. In the substrate processing method including, before exposing the substrate from the rinsing liquid in the processing tank, the liquid level of the rinsing liquid in the processing tank is irradiated with light to heat the surface of the rinsing liquid , and the processing An inert gas is supplied to the liquid surface of the rinsing liquid in the tank so that the vicinity of the liquid surface of the rinsing liquid is an inert gas atmosphere, and the liquid surface of the rinsing liquid in the treatment tank is irradiated with light and the liquid of the rinsing liquid After starting the supply of inert gas to the surface Characterized by supplying the organic solvent vapor to the substrate to be exposed from the rinse solution in the processing bath.
[0008]
[0009]
[0010]
According to a third aspect of the present invention, there is provided a processing bath in which a rinsing liquid is stored and a substrate is immersed in the rinsing liquid to perform a rinsing process, and a substrate exposure for exposing the substrate from the rinsing liquid stored in the processing tank. Means, vapor supply means for supplying vapor of an organic solvent to the substrate exposed from the rinse liquid in the treatment tank, and an inert gas for the liquid surface of the rinse liquid in the treatment tank. A gas supply means; a heater for heating an inert gas supplied by the gas supply means; a heating means for heating the liquid surface of the rinsing liquid in the treatment tank; and the treatment tank by the substrate exposure means. actuates said heating means before the substrate from the rinsing liquid of the inner is exposed, and a control means for controlling to start the supply of the vapor of the organic solvent by the steam supply means after operating said heating means Characterized by comprising a.
[0011]
According to a fourth aspect of the present invention, there is provided a processing tank in which a rinsing liquid is stored and a substrate is immersed in the rinsing liquid to perform a rinsing process, and a substrate exposure for exposing the substrate from the rinsing liquid stored in the processing tank. Means, vapor supply means for supplying vapor of the organic solvent to the substrate exposed from the rinse liquid in the treatment tank, and a heating lamp for irradiating the liquid surface of the rinse liquid in the treatment tank with light. And heating means for heating the liquid level of the rinsing liquid in the processing tank, gas supply means for supplying an inert gas to the liquid level of the rinsing liquid in the processing tank, and the substrate exposing means actuates said heating means from the rinse solution in the treating tank before the substrate is exposed to start supply of the inert gas by the gas supply means, by the gas supply means actuates said heating means inactive And control means for controlling so as to start the supply of the vapor of the organic solvent by the steam supply means after the start of the supply of the scan, further comprising a characterized.
[0012]
[0013]
[0014]
According to the substrate processing method of the first aspect of the present invention, the heated inert gas is supplied to the surface of the rinsing liquid in the processing tank before the substrate is exposed from the rinsing liquid in the processing tank. As a result, the temperature of the rinsing liquid and the temperature in the vicinity of the liquid level rise, and the vicinity of the rinsing liquid becomes an inert gas atmosphere. As described above, when the substrate is exposed from the rinsing liquid in the treatment tank, the temperature of the rinsing liquid and the temperature in the vicinity of the liquid surface rise, so the amount of the organic solvent dissolved in the rinsing liquid is reduced, and the rinsing liquid The occurrence of organic solvent concentration spots on the liquid surface is suppressed. At this time, since the rinsing liquid in the processing tank continuously overflows from the upper part of the processing tank, the temperature of the rinsing liquid in the liquid does not increase. Therefore, since the temperature of the substrate in the rinsing liquid does not increase, the condensation of the organic solvent vapor onto the surface of the substrate exposed from the rinsing liquid is performed without any trouble. In addition, when the substrate is exposed from the rinse liquid in the treatment tank, the vicinity of the liquid surface of the rinse liquid becomes an inert gas atmosphere, so the amount of the organic solvent supplied to the liquid surface of the rinse liquid is reduced, The amount of organic solvent that dissolves in the rinsing liquid is reduced.
[0015]
According to the substrate processing method of the second aspect of the present invention, before the substrate is exposed from the rinsing liquid in the processing tank, the surface of the rinsing liquid in the processing tank is irradiated with light, thereby rinsing with radiant heat. The liquid surface of the rinse liquid is heated to increase the temperature of the liquid surface of the rinse liquid and the temperature in the vicinity of the liquid surface, and an inert gas is supplied to the liquid surface of the rinse liquid in the treatment tank, thereby The vicinity is an inert gas atmosphere . As described above, when the substrate is exposed from the rinsing liquid in the treatment tank, the temperature of the rinsing liquid and the temperature in the vicinity of the liquid surface rise, so the amount of the organic solvent dissolved in the rinsing liquid is reduced, and the rinsing liquid The occurrence of organic solvent concentration spots on the liquid surface is suppressed. At this time, since the rinsing liquid in the processing tank continuously overflows from the upper part of the processing tank, the temperature of the rinsing liquid in the liquid does not increase. Therefore, since the temperature of the substrate in the rinsing liquid does not increase, the condensation of the organic solvent vapor onto the surface of the substrate exposed from the rinsing liquid is performed without any trouble. In addition, when the substrate is exposed from the rinse liquid in the treatment tank, the vicinity of the liquid surface of the rinse liquid becomes an inert gas atmosphere, so the amount of the organic solvent supplied to the liquid surface of the rinse liquid is reduced, The amount of organic solvent that dissolves in the rinsing liquid is reduced.
[0016]
[0017]
[0018]
In the substrate processing apparatus according to the third aspect of the present invention, before the substrate is exposed from the rinse liquid in the processing tank by the substrate exposing means, the inert gas heated by the heater is supplied into the processing tank by the gas supply means. By being supplied to the liquid surface of the rinsing liquid, the temperature of the liquid surface of the rinsing liquid and the temperature in the vicinity of the liquid surface rise, and the vicinity of the liquid surface of the rinsing liquid becomes an inert gas atmosphere. As described above, when the substrate is exposed from the rinsing liquid in the treatment tank, the temperature of the rinsing liquid and the temperature in the vicinity of the liquid surface rise, so the amount of the organic solvent dissolved in the rinsing liquid is reduced, and the rinsing liquid The occurrence of organic solvent concentration spots on the liquid surface is suppressed. At this time, since the rinsing liquid in the processing tank continuously overflows from the upper part of the processing tank, the temperature of the rinsing liquid in the liquid does not increase. Therefore, since the temperature of the substrate in the rinsing liquid does not increase, the condensation of the organic solvent vapor onto the surface of the substrate exposed from the rinsing liquid is performed without any trouble. In addition, when the substrate is exposed from the rinse liquid in the treatment tank, the vicinity of the liquid surface of the rinse liquid becomes an inert gas atmosphere, so the amount of the organic solvent supplied to the liquid surface of the rinse liquid is reduced, The amount of organic solvent that dissolves in the rinsing liquid is reduced.
[0019]
In the substrate processing apparatus of the invention according to claim 4 , before the substrate is exposed from the rinsing liquid in the processing tank by the substrate exposing means, light is irradiated from the heating lamp to the liquid surface of the rinsing liquid in the processing tank. by being, the temperature of the liquid surface and the vicinity of the liquid surface of the heated liquid level of the rinsing liquid in the radiant heat rinsing liquid is increased, the inert gas against the liquid surface of the rinsing liquid in the processing bath by the gas supply means Is supplied, an inert gas atmosphere is formed in the vicinity of the liquid surface of the rinse liquid . As described above, when the substrate is exposed from the rinsing liquid in the treatment tank, the temperature of the rinsing liquid and the temperature in the vicinity of the liquid surface rise, so the amount of the organic solvent dissolved in the rinsing liquid is reduced, and the rinsing liquid The occurrence of organic solvent concentration spots on the liquid surface is suppressed. At this time, since the rinsing liquid in the processing tank continuously overflows from the upper part of the processing tank, the temperature of the rinsing liquid in the liquid does not increase. Therefore, since the temperature of the substrate in the rinsing liquid does not increase, the condensation of the organic solvent vapor onto the surface of the substrate exposed from the rinsing liquid is performed without any trouble. In addition, when the substrate is exposed from the rinse liquid in the treatment tank, the vicinity of the liquid surface of the rinse liquid becomes an inert gas atmosphere, so the amount of the organic solvent supplied to the liquid surface of the rinse liquid is reduced, The amount of organic solvent that dissolves in the rinsing liquid is reduced.
[0020]
[0021]
[0022]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.
[0023]
FIG. 1 is a schematic diagram showing an example of a schematic configuration of a substrate processing apparatus used for carrying out a substrate processing method according to the present invention. The substrate processing apparatus includes a processing tank 10 in which a rinsing liquid, for example, pure water is stored and a substrate W is immersed in the pure water to perform a rinsing process, and a processing chamber 12 surrounding the processing tank 10. Yes.
[0024]
Although the detailed illustration and description of the treatment tank 10 are omitted, the treatment tank 10 has a pure water supply port at the bottom, an overflow portion from which pure water overflows, and a drain port at the bottom. The processing chamber 12 can carry in and out the substrate W and can be sealed by opening and closing a lid (not shown). A lifter 14 that is driven up and down is disposed inside the processing chamber 12, and the lifter 14 receives the substrate W carried into the processing chamber 12 and carries it into the processing bath 10, and the processing bath 10. The substrate W is supported in the substrate 10, and the substrate W that has been processed is taken out from the processing tank 10. A gas-liquid discharge port 16 is provided at the bottom of the processing chamber 12. An exhaust pipe 18 having an on-off valve 20 interposed therein and an on-off valve 24 are inserted into the gas-liquid discharge port 16. The drain pipes 22 communicate with each other.
[0025]
Further, a vapor supply nozzle 26 is provided in the upper part of the processing chamber 12. A vapor supply pipe 28 for supplying an organic solvent, for example, IPA vapor using an inert gas such as nitrogen gas as a carrier gas, is connected to the vapor supply nozzle 26, and an open / close valve is connected to the vapor supply pipe 28. 30 is interposed. Further, a gas supply nozzle 32 for supplying an inert gas, for example, nitrogen gas, to the pure water level in the processing tank 10 is provided inside the processing chamber 12. A gas supply pipe 34 connected to a nitrogen gas supply source is connected to the gas supply nozzle 32, and an open / close valve 36 is provided in the gas supply pipe 34. The gas supply pipe 34 is provided with a heater 38, and the nitrogen gas supplied to the gas supply nozzle 32 through the gas supply pipe 34 is heated by the heater 38, for example, at a temperature of 50 ° C. or more. It is comprised so that it can heat.
[0026]
The on-off valves 20 and 24 inserted in the exhaust pipe 18 and the drain pipe 22, respectively, the up-and-down operation of the lifter 14, and the on-off valves 30 inserted in the steam supply pipe 28 and the gas supply pipe 34, respectively. , 36 is controlled by a control unit 40 having a timer 42 as shown in FIG.
[0027]
Next, an example of a substrate drying process operation performed after the rinsing process using the substrate processing apparatus having the above-described configuration will be described.
[0028]
The substrate W is immersed in pure water stored in the processing tank 10 to perform the rinsing process of the substrate W. When the rinsing process is completed, the heater 38 is driven, the on-off valve 36 is opened, and the gas is discharged. Nitrogen gas heated to a temperature of 50 ° C. or more is sent to the gas supply nozzle 32 through the supply pipe 34, and the heated nitrogen gas is supplied from the gas supply nozzle 32 to the pure water level in the treatment tank 10. Is done. As a result, the vicinity of the pure water level in the treatment tank 10 becomes a nitrogen gas atmosphere, and the temperature of the pure water level and the vicinity of the liquid level rise.
[0029]
After the supply of heated nitrogen gas is started, for example, after 10 seconds or more have elapsed from the start of supply of nitrogen gas, the on-off valve 30 is opened as shown in the time chart of FIG. The IPA vapor is sent to the vapor supply nozzle 26 through the vapor supply pipe 28, and the IPA vapor is supplied from the vapor supply nozzle 26 into the treatment tank 10. At this time, the vicinity of the pure water level in the treatment tank 10 is in a nitrogen gas atmosphere, and the temperature of the pure water level and the vicinity of the liquid level are rising. The melting of is suppressed. Therefore, IPA concentration spots do not occur on the surface of the pure water in the treatment tank 10. In addition, since the pure water in the processing tank 10 is continuously overflowed from the overflow portion at the top of the processing tank 10, the temperature of the pure water in the liquid does not increase, and the substrate W in the pure water does not rise. Temperature does not rise.
[0030]
After the supply of the IPA vapor is started, the lifter 14 is driven, and the lifter 14 slowly pulls up the substrate W from the pure water in the processing bath 10. The IPA vapor is condensed on the surface of the substrate W pulled up from the pure water, and the pure water adhering to the surface of the substrate W is replaced with IPA. When the substrate W is completely pulled up from the pure water, the on-off valve 36 inserted in the gas supply pipe 34 is closed, and the supply of heated nitrogen gas is stopped. Thereafter, the on-off valve 30 inserted in the steam supply pipe 28 is closed, and the supply of IPA steam into the processing chamber 12 is stopped. At this point, the surface of the substrate W is completely replaced by IPA.
[0031]
When the substrate W is completely pulled up from the pure water in the processing tank 10 by the lifter 14, after purging the processing chamber 12 with drainage or nitrogen gas from the processing tank 10, the sealed processing chamber 12 is sealed. While the substrate W is held inside, the inside of the processing chamber 12 is evacuated through the exhaust pipe 18 to quickly dry the substrate W held in the processing chamber 12 under reduced pressure. Thereby, IPA is completely evaporated and removed from the surface of the substrate W, and drying of the substrate W is completed. When the drying process of the substrate W is completed, the evacuation is stopped, the lid of the processing chamber 12 is opened, and the substrate W is carried out of the processing chamber 12. The above series of processing operations is controlled by the control unit 40.
[0032]
In the embodiment described above, heated nitrogen gas is supplied from the gas supply nozzle 32 to the pure water level in the processing bath 10 to heat the pure water level in the processing bath 10. However, as shown in FIG. 4, a heating lamp 44 is arranged inside the processing chamber 12, and the near infrared light to the far red light from the heating lamp 44 toward the pure water level in the processing tank 10. It is also possible to adopt an apparatus configuration that irradiates external light and heats the liquid surface of pure water by radiant heat. In FIG. 4, members having the same reference numerals as those used in FIG. 1 have the same functions as the above-described members described with respect to the apparatus shown in FIG. 1. In the substrate processing apparatus shown in FIG. 4, nitrogen gas at room temperature is supplied from the gas supply nozzle 32 to the pure water level in the processing tank 10 .
[0033]
Moreover, in the said embodiment, although the board | substrate W after the rinse process was pulled up with the lifter 14, the board | substrate W was exposed from the pure water in the process tank 10, but the board | substrate W after a rinse process was processed into the process tank. The substrate W may be exposed from the pure water by leaving it still in the substrate 10 and slowly draining it from the treatment vessel 10 to lower the level of pure water in the treatment vessel 10.
[0034]
【The invention's effect】
When drying the substrate by supplying vapor of the organic solvent to the substrate exposed from the rinse liquid stored in the processing tank by the substrate processing method of each invention according to claim 1 and claim 2, It is possible to reduce the amount of the organic solvent dissolved in the rinsing liquid and prevent the organic solvent concentration spots from occurring on the surface of the rinsing liquid. For this reason, inconveniences such as variations in the dry state in the substrate surface, generation of device particles, and dissolution of the resist on the device can be eliminated. Also, the configuration and control of the apparatus are relatively simple.
[0035]
[0036]
[0037]
[0038]
When the substrate processing apparatus of each invention according to claim 3 and claim 4 is used, the amount of the organic solvent dissolved in the rinsing liquid is reduced, thereby preventing the occurrence of organic solvent concentration spots on the liquid surface of the rinsing liquid. Therefore, inconveniences such as variations in the dry state in the substrate surface, generation of device particles, and dissolution of the resist on the device can be eliminated. Also, the configuration and control of the apparatus are relatively simple.
[Brief description of the drawings]
FIG. 1 is a schematic diagram showing an example of a schematic configuration of a substrate processing apparatus used for carrying out a substrate processing method according to the present invention.
FIG. 2 is a diagram showing a schematic configuration of a control system of the substrate processing apparatus shown in FIG. 1;
FIG. 3 is a time chart of a substrate drying processing operation performed after rinsing using the substrate processing apparatus shown in FIG. 1;
FIG. 4 is a schematic diagram showing another example of the schematic configuration of the substrate processing apparatus according to the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Processing tank 12 Processing chamber 14 Lifter 16 Gas-liquid discharge port 18 Exhaust pipe 20, 24, 30, 36 On-off valve 22 Drain pipe 26 Steam supply nozzle 28 Steam supply pipe 32 Gas supply nozzle 34 Gas supply pipe 38 Heater 40 Control part W substrate

Claims

A step of rinsing the substrate by immersing the substrate in a rinsing liquid stored in the treatment tank;
Exposing the substrate from the rinse liquid stored in the processing tank;
Supplying the vapor of the organic solvent to the substrate exposed from the rinsing liquid in the treatment tank to condense the organic solvent on the surface of the substrate, evaporating the organic solvent, and drying the substrate;
In a substrate processing method including:
Before the substrate is exposed from the rinse liquid in the treatment tank, the heated inert gas is supplied to the liquid surface of the rinse liquid in the treatment tank to heat the rinse liquid and to rinse the liquid. An inert gas atmosphere in the vicinity of the liquid surface of the substrate, and after the supply of the heated inert gas is started, the vapor of the organic solvent is supplied to the substrate exposed from the rinse liquid in the treatment tank. A substrate processing method.

A step of rinsing the substrate by immersing the substrate in a rinsing liquid stored in the treatment tank;
Exposing the substrate from the rinse liquid stored in the processing tank;
Supplying the vapor of the organic solvent to the substrate exposed from the rinsing liquid in the treatment tank to condense the organic solvent on the surface of the substrate, evaporating the organic solvent, and drying the substrate;
In a substrate processing method including:
Before exposing the substrate from the rinsing liquid in the processing tank, the surface of the rinsing liquid in the processing tank is irradiated with light to heat the surface of the rinsing liquid, and the rinsing liquid in the processing tank is heated . An inert gas is supplied to the liquid surface to make the vicinity of the liquid surface of the rinse liquid an inert gas atmosphere, light irradiation to the liquid surface of the rinse liquid in the treatment tank and the inert gas to the liquid surface of the rinse liquid After starting supply, the substrate processing method characterized by supplying the vapor | steam of an organic solvent with respect to the board | substrate exposed from the rinse liquid in the said processing tank .

A treatment tank in which the rinse liquid is stored and the substrate is immersed in the rinse liquid and rinsed;
Substrate exposing means for exposing the substrate from the rinse liquid stored in the processing tank;
Vapor supply means for supplying vapor of the organic solvent to the substrate exposed from the rinse liquid in the treatment tank;
A gas supply means for supplying an inert gas to the liquid surface of the rinsing liquid in the treatment tank; and a heater for heating the inert gas supplied by the gas supply means; Heating means for heating the liquid level;
The heating means is operated before the substrate is exposed from the rinsing liquid in the processing tank by the substrate exposure means, and after the heating means is operated, supply of the organic solvent vapor by the vapor supply means is started. Control means for controlling
A substrate processing apparatus comprising:

A treatment tank in which the rinse liquid is stored and the substrate is immersed in the rinse liquid and rinsed;
Substrate exposing means for exposing the substrate from the rinse liquid stored in the processing tank;
Vapor supply means for supplying vapor of the organic solvent to the substrate exposed from the rinse liquid in the treatment tank;
A heating means for irradiating the liquid surface of the rinsing liquid in the processing tank with light, and heating means for heating the liquid surface of the rinsing liquid in the processing tank;
Gas supply means for supplying an inert gas to the surface of the rinse liquid in the treatment tank;
Wherein together with the substrate from the rinsing solution in the treating tank actuates the heating means before being exposed to start supply of the inert gas by the gas supply means, actuates the previous SL heating means by the substrate exposed section Control means for controlling to start the supply of the organic solvent vapor by the vapor supply means after starting the supply of the inert gas by the gas supply means ;
A substrate processing apparatus comprising: