JPH11195595A - Aligner - Google Patents

Aligner

Info

Publication number
JPH11195595A
JPH11195595A JP10010017A JP1001798A JPH11195595A JP H11195595 A JPH11195595 A JP H11195595A JP 10010017 A JP10010017 A JP 10010017A JP 1001798 A JP1001798 A JP 1001798A JP H11195595 A JPH11195595 A JP H11195595A
Authority
JP
Japan
Prior art keywords
mask
substrate
exposure
focus
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10010017A
Other languages
Japanese (ja)
Inventor
Hiroshi Shinkai
洋 新開
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP10010017A priority Critical patent/JPH11195595A/en
Publication of JPH11195595A publication Critical patent/JPH11195595A/en
Pending legal-status Critical Current

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an aligner capable of avoiding an heterogeneity position of focus caused by its own weight of large masks by arranging an optical items so that the masks are arranged vertically. SOLUTION: A mask 1 is arranged vertically. Image focussing optical sections 52, 53, and 51' are arranged, so that pattern of the mask 1 irradiated by a slit beam 55 is focussed and transcribed on a substrate 3. The mask 1 can be vertically supported with the composition of the image focussing optical sections 52, 53, 51', and the like. This enable elimination of deformation of the mask 1 caused by its own weight and the occurrence of positional difference of focus between center and circumference. Therefore, there is not deformation caused by its own weight even for a larger mask 1, and since the focussing position is kept the same, adequate depth of focus is ensured.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体素子や液晶
パネル等を製造するための基板上にマスクパターンを転
写する露光装置に関し、特に大画面を分割焼きする分割
走査型のミラープロジェクション露光装置に関するもの
である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus for transferring a mask pattern onto a substrate for manufacturing a semiconductor element, a liquid crystal panel, and the like, and more particularly, to a division scanning type mirror projection exposure apparatus for dividing and printing a large screen. Things.

【0002】[0002]

【従来の技術】従来、半導体等の露光装置においては、
図2および図3に示す如くパターン転写用マスク(以
下、マスク)と被露光用の基板とは結像光学系を挟んで
水平かつ平行に配置されていた。図において、1はマス
ク、2はマスクステージ、3は基板、4は基板ステー
ジ、6は照明系、9は構造体、13は基台、15は制御
回路、16はマスクステージ駆動部材、17は基板ステ
ージ駆動部材、19はレーザ干渉系、51は台形ミラ
ー、52は凸面ミラー、53は凹面ミラー、55はスリ
ット状照明光である。
2. Description of the Related Art Conventionally, in an exposure apparatus such as a semiconductor,
As shown in FIGS. 2 and 3, the pattern transfer mask (hereinafter, mask) and the substrate to be exposed were horizontally and parallelly arranged with the imaging optical system interposed therebetween. In the figure, 1 is a mask, 2 is a mask stage, 3 is a substrate, 4 is a substrate stage, 6 is an illumination system, 9 is a structure, 13 is a base, 15 is a control circuit, 16 is a mask stage driving member, and 17 is a mask stage driving member. A substrate stage driving member, 19 is a laser interference system, 51 is a trapezoidal mirror, 52 is a convex mirror, 53 is a concave mirror, and 55 is slit-shaped illumination light.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、マスク
を保持するマスクホルダは露光用の光を透過させる必要
があるため、図4の如くに周辺を吸着固定し中央部は開
口が開いており、上述のような従来例の構造では、最近
の傾向のように基板が大型化するに伴いマスクも大型化
してきた場合、その自重による変形で、中央と周辺にお
いて焦点位置が違ってきて充分な焦点深度が得られなく
なるという問題があった。
However, since the mask holder for holding the mask needs to transmit the light for exposure, the periphery is fixed by suction as shown in FIG. In a conventional structure such as that described above, when the size of the mask increases as the size of the substrate increases as in the recent trend, the focal position differs between the center and the periphery due to deformation due to its own weight. There is a problem that can not be obtained.

【0004】本発明においては、マスクが大型化しても
自重変形による焦点位置の不均一が起こらない構成の露
光装置を提供することを目的とする。
SUMMARY OF THE INVENTION It is an object of the present invention to provide an exposure apparatus having a configuration in which the focal position does not become uneven due to its own weight deformation even when the size of the mask is increased.

【0005】[0005]

【課題を解決するための手段】上記の目的を達成するた
め本発明では、露光時に被露光基板を垂直方向以外の向
き(例えば水平方向)に配置する露光装置において、マ
スクの配置が垂直方向になるように光学部材等を配置す
ることによりマスクの自重変形が起こらない構造とす
る。
In order to achieve the above object, according to the present invention, in an exposure apparatus for arranging a substrate to be exposed in a direction other than a vertical direction (for example, in a horizontal direction) during exposure, a mask is arranged in a vertical direction. By arranging the optical members and the like so that the mask does not undergo its own weight deformation.

【0006】[0006]

【作用】マスクを垂直方向に配置することにより、マス
クの自重によるマスクのたわみを防止してマスクの露光
光透過面を平面に保つことができ、マスクの露光光透過
面全面に渡って充分な焦点深度を確保することができ
る。
By arranging the mask in the vertical direction, it is possible to prevent the deflection of the mask due to its own weight, to keep the exposure light transmitting surface of the mask flat, and to provide a sufficient mask over the entire exposure light transmitting surface of the mask. Depth of focus can be secured.

【0007】[0007]

【発明の実施の形態】本発明の実施の一形態に係る露光
装置においては、パターン転写用の透過型マスクを垂直
に、被露光基板を水平に保持し、前記マスクを透過した
露光光を直角に折り曲げて前記被露光基板上に結像させ
ることを特徴とする。また、本発明の実施の他の形態に
係るミラープロジェクション露光装置は、図1に示すよ
うに、パターン転写用の透過型マスクを垂直に保持する
ホルダと、反射面が1つだけの折り曲げミラー51’
と、結像ミラー52,53とを有することを特徴とす
る。
DESCRIPTION OF THE PREFERRED EMBODIMENTS In an exposure apparatus according to an embodiment of the present invention, a transmission type mask for transferring a pattern is held vertically, and a substrate to be exposed is held horizontally, and the exposure light transmitted through the mask is made a right angle. And forming an image on the substrate to be exposed. As shown in FIG. 1, a mirror projection exposure apparatus according to another embodiment of the present invention includes a holder for vertically holding a transmission type mask for pattern transfer, and a bending mirror 51 having only one reflection surface. '
And imaging mirrors 52 and 53.

【0008】[0008]

【実施例】以下、図面を用いて本発明の実施例を説明す
る。図1は本発明を実施した露光装置の概念図であり、
図2は従来の露光装置の概念図である。図1の露光装置
は、図2のものに対し、図2では水平に配置していたマ
スク1を垂直に配置し、かつ露光光を折り曲げる反射面
を図2のものより1つ減らしたものである。図1におい
て、1はマスク、2はマスクステージ、3は基板、4は
基板ステージ、16はマスクステージ駆動部材、17は
基板ステージ駆動部材、51’は折り曲げミラー、52
は凸面ミラー、53は凹面ミラー、55はスリット状照
明光である。折り曲げミラー51’の反射面は1つだけ
である。これに対し、図2の装置では反射面を2個有す
る台形ミラー51を用いている。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a conceptual diagram of an exposure apparatus embodying the present invention,
FIG. 2 is a conceptual diagram of a conventional exposure apparatus. The exposure apparatus shown in FIG. 1 is different from the apparatus shown in FIG. 2 in that a mask 1 arranged horizontally in FIG. 2 is arranged vertically, and the number of reflection surfaces for bending exposure light is reduced by one from that shown in FIG. is there. In FIG. 1, 1 is a mask, 2 is a mask stage, 3 is a substrate, 4 is a substrate stage, 16 is a mask stage driving member, 17 is a substrate stage driving member, 51 ′ is a bending mirror, 52
Is a convex mirror, 53 is a concave mirror, and 55 is a slit-like illumination light. The folding mirror 51 'has only one reflecting surface. In contrast, the apparatus shown in FIG. 2 uses a trapezoidal mirror 51 having two reflection surfaces.

【0009】スリット状照明光55によって照明された
マスク1上のパターンは結像光学部材52,53,5
1’により基板3に結像し転写される。マスク1を保持
しているマスクホルダ(不図示)はマスクホルダ駆動部
材16によりスリット状照明光55に対し直角方向にス
キャンされる。一方、基板3を保持している基板ステー
ジ4は基板ステージ駆動部材17によりスリット状照明
光55に対し直角方向にスキャンされる。マスクステー
ジ2と基板ステージ4を同じスピードで同期駆動するこ
とによりマスク1のパターンが基板3上に全面転写され
る。
The pattern on the mask 1 illuminated by the slit-shaped illumination light 55 is formed by imaging optical members 52, 53, 5.
1 'forms an image on the substrate 3 and is transferred. A mask holder (not shown) holding the mask 1 is scanned by a mask holder driving member 16 in a direction perpendicular to the slit-shaped illumination light 55. On the other hand, the substrate stage 4 holding the substrate 3 is scanned by the substrate stage driving member 17 in a direction perpendicular to the slit-shaped illumination light 55. By synchronously driving the mask stage 2 and the substrate stage 4 at the same speed, the entire pattern of the mask 1 is transferred onto the substrate 3.

【0010】図1の如く光学部材を構成することにより
マスクは垂直に保持できるので自重変形がなく焦点位置
の中央と周辺での違いが起こらなくなる。
By configuring the optical member as shown in FIG. 1, the mask can be held vertically, so that there is no deformation of its own weight and no difference occurs between the center and the periphery of the focal position.

【0011】[0011]

【デバイス生産方法の実施例】次に上記説明した露光装
置または露光方法を利用したデバイスの生産方法の実施
例を説明する。図5は微小デバイス(ICやLSI等の
半導体チップ、液晶パネル、CCD、薄膜磁気ヘッド、
マイクロマシン等)の製造のフローを示す。ステップ1
(回路設計)ではデバイスのパターン設計を行なう。ス
テップ2(マスク製作)では設計したパターンを形成し
たマスクを製作する。一方、ステップ3(ウエハ製造)
ではシリコンやガラス等の材料を用いてウエハを製造す
る。ステップ4(ウエハプロセス)は前工程と呼ばれ、
上記用意したマスクとウエハを用いて、リソグラフィ技
術によってウエハ上に実際の回路を形成する。次のステ
ップ5(組み立て)は後工程と呼ばれ、ステップ4によ
って作製されたウエハを用いて半導体チップ化する工程
であり、アッセンブリ工程(ダイシング、ボンディン
グ)、パッケージング工程(チップ封入)等の工程を含
む。ステップ6(検査)ではステップ5で作製された半
導体デバイスの動作確認テスト、耐久性テスト等の検査
を行なう。こうした工程を経て半導体デバイスが完成
し、これが出荷(ステップ7)される。
[Embodiment of Device Production Method] Next, an embodiment of a device production method using the above-described exposure apparatus or exposure method will be described. FIG. 5 shows a micro device (a semiconductor chip such as an IC or an LSI, a liquid crystal panel, a CCD, a thin film magnetic head,
2 shows a flow of manufacturing a micromachine or the like. Step 1
In (Circuit Design), a device pattern is designed. Step 2 is a process for making a mask on the basis of the designed pattern. Step 3 (wafer manufacturing)
Then, a wafer is manufactured using a material such as silicon or glass. Step 4 (wafer process) is called a pre-process,
An actual circuit is formed on the wafer by lithography using the prepared mask and wafer. The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer produced in step 4, and includes processes such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). including. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7).

【0012】図6は上記ウエハプロセスの詳細なフロー
を示す。ステップ11(酸化)ではウエハの表面を酸化
させる。ステップ12(CVD)ではウエハ表面に絶縁
膜を形成する。ステップ13(電極形成)ではウエハ上
に電極を蒸着によって形成する。ステップ14(イオン
打込み)ではウエハにイオンを打ち込む。ステップ15
(レジスト処理)ではウエハに感光剤を塗布する。ステ
ップ16(露光)では上記説明した露光装置によってマ
スクの回路パターンをウエハに焼付露光する。ステップ
17(現像)では露光したウエハを現像する。ステップ
18(エッチング)では現像したレジスト像以外の部分
を削り取る。ステップ19(レジスト剥離)ではエッチ
ングが済んで不要となったレジストを取り除く。これら
のステップを繰り返し行なうことによって、ウエハ上に
多重に回路パターンが形成される。
FIG. 6 shows a detailed flow of the wafer process. Step 11 (oxidation) oxidizes the wafer's surface. Step 12 (CVD) forms an insulating film on the wafer surface. Step 13 (electrode formation) forms electrodes on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. Step 15
In (resist processing), a photosensitive agent is applied to the wafer. Step 16 (exposure) uses the above-described exposure apparatus to print and expose the circuit pattern of the mask onto the wafer. Step 17 (development) develops the exposed wafer. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

【0013】本実施例の生産方法を用いれば、従来は製
造が難しかった高集積度のデバイスを低コストに製造す
ることができる。
By using the production method of this embodiment, it is possible to produce a highly integrated device, which was conventionally difficult to produce, at low cost.

【0014】[0014]

【発明の効果】以上説明したように、本発明の如くに、
透過型マスクを垂直に保持し、このマスクを透過した露
光光をマスクとは異なる向き、例えば水平に配置した被
露光基板に光学部材を配置することによりマスクを垂直
に保持することができ、マスクが大型化しても自重によ
る変形がおきず焦点位置が同一に保たれるので充分な焦
点深度を確保することができる。
As described above, according to the present invention,
The transmission type mask is held vertically, and the exposure light transmitted through the mask can be held vertically by arranging an optical member on a substrate to be exposed which is arranged in a different direction from the mask, for example, horizontally. Even if the size of the camera becomes large, deformation due to its own weight does not occur and the focus position is kept the same, so that a sufficient depth of focus can be secured.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明の実施例に係る露光装置の概念図であ
る。
FIG. 1 is a conceptual diagram of an exposure apparatus according to an embodiment of the present invention.

【図2】 従来の露光装置の概念図である。FIG. 2 is a conceptual diagram of a conventional exposure apparatus.

【図3】 従来の露光装置の概略構成図である。FIG. 3 is a schematic configuration diagram of a conventional exposure apparatus.

【図4】 マスクステージの構造を示す図である。FIG. 4 is a diagram showing a structure of a mask stage.

【図5】 微小デバイスの製造の流れを示す図である。FIG. 5 is a diagram showing a flow of manufacturing a micro device.

【図6】 図5におけるウエハプロセスの詳細な流れを
示す図である。
FIG. 6 is a diagram showing a detailed flow of a wafer process in FIG. 5;

【符号の説明】[Explanation of symbols]

1:マスク、2:マスクステージ、3:基板、4:基板
ステージ、6:照明系、9:構造体、13:基台、1
5:制御回路、16:マスクステージ駆動部材、17:
基板ステージ駆動部材、19:レーザ干渉系、51:台
形ミラー、51’:折り曲げミラー、52:凸面ミラ
ー、53:凹面ミラー、55:スリット状照明光。
1: mask, 2: mask stage, 3: substrate, 4: substrate stage, 6: illumination system, 9: structure, 13: base, 1
5: control circuit, 16: mask stage driving member, 17:
Substrate stage driving member, 19: laser interference system, 51: trapezoidal mirror, 51 ′: bending mirror, 52: convex mirror, 53: concave mirror, 55: slit illumination light.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 露光時に被露光基板を垂直方向以外の向
きに配置する露光装置において、露光時のマスクの配置
が垂直方向になるように光学部材等を配置したことを特
徴とする露光装置。
1. An exposure apparatus for arranging a substrate to be exposed in a direction other than a vertical direction at the time of exposure, wherein an optical member or the like is arranged so that an arrangement of a mask at the time of exposure is vertical.
【請求項2】 パターン転写用の透過型マスクを垂直
に、被露光基板を水平に保持し、前記マスクを透過した
露光光を直角に折り曲げて前記被露光基板上に結像させ
ることを特徴とする露光装置。
2. The method according to claim 1, wherein the transmission type mask for pattern transfer is held vertically and the substrate to be exposed is held horizontally, and the exposure light transmitted through the mask is bent at a right angle to form an image on the substrate to be exposed. Exposure equipment.
【請求項3】 パターン転写用の透過型マスクを垂直に
保持するホルダと、反射面が1つだけの折り曲げミラー
51’と、結像ミラー52,53とを有することを特徴
とするミラープロジェクション露光装置。
3. A mirror projection exposure comprising a holder for vertically holding a transmission type mask for pattern transfer, a bending mirror 51 'having only one reflection surface, and imaging mirrors 52 and 53. apparatus.
【請求項4】 請求項1〜3のいずれか1つに記載の露
光装置を用いてデバイスを製造することを特徴とするデ
バイス製造方法。
4. A device manufacturing method, comprising manufacturing a device using the exposure apparatus according to claim 1.
JP10010017A 1998-01-05 1998-01-05 Aligner Pending JPH11195595A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10010017A JPH11195595A (en) 1998-01-05 1998-01-05 Aligner

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10010017A JPH11195595A (en) 1998-01-05 1998-01-05 Aligner

Publications (1)

Publication Number Publication Date
JPH11195595A true JPH11195595A (en) 1999-07-21

Family

ID=11738635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10010017A Pending JPH11195595A (en) 1998-01-05 1998-01-05 Aligner

Country Status (1)

Country Link
JP (1) JPH11195595A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007032504A1 (en) * 2005-09-12 2007-03-22 Asahi Glass Company, Limited Photomask, photomask manufacturing method, and photomask processing device
US7777860B2 (en) 2005-03-28 2010-08-17 Lg Display Co., Ltd. Exposure apparatus for flat panel display device and method of exposing using the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7777860B2 (en) 2005-03-28 2010-08-17 Lg Display Co., Ltd. Exposure apparatus for flat panel display device and method of exposing using the same
KR101116630B1 (en) * 2005-03-28 2012-03-07 엘지디스플레이 주식회사 exposing apparatus for flat panel display device and substrate photolithography method using thereof
WO2007032504A1 (en) * 2005-09-12 2007-03-22 Asahi Glass Company, Limited Photomask, photomask manufacturing method, and photomask processing device
US7549141B2 (en) 2005-09-12 2009-06-16 Asahi Glass Company, Ltd. Photomask, photomask manufacturing method, and photomask processing device

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