JPH11186492A - Semiconductor package and its mounting structure - Google Patents
Semiconductor package and its mounting structureInfo
- Publication number
- JPH11186492A JPH11186492A JP9353500A JP35350097A JPH11186492A JP H11186492 A JPH11186492 A JP H11186492A JP 9353500 A JP9353500 A JP 9353500A JP 35350097 A JP35350097 A JP 35350097A JP H11186492 A JPH11186492 A JP H11186492A
- Authority
- JP
- Japan
- Prior art keywords
- terminal
- terminals
- signal circuit
- semiconductor
- semiconductor package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73261—Bump and TAB connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、情報機器等に搭載
される半導体パッケージ及び半導体パッケージを多段に
積み重ねて高密度に実装する半導体パッケージの実装構
造に関し、特に小型化を図れるものに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor package mounted on information equipment and the like and a semiconductor package mounting structure in which semiconductor packages are stacked in multiple stages and mounted at a high density, and more particularly to a structure which can be miniaturized.
【0002】[0002]
【従来の技術】最近の情報機器等では、高機能化を図る
ため同種の半導体ICを多数用いるメモリーIC等の半
導体ICが占有するマザーボード(基板)の面積の割合
が大きく、基板面積が大きくなる要因となっている。2. Description of the Related Art In recent information devices and the like, the proportion of the area of a motherboard (substrate) occupied by a semiconductor IC such as a memory IC using a large number of semiconductor ICs of the same type in order to achieve high functionality is large, and the substrate area is large. It is a factor.
【0003】このため、卓上型のパソコンやワークステ
ーシヨンでは、図6に示すように、これらの半導体IC
1を小型のドーターボード2上に実装し、このドーター
ボード2をマザーボード3上に垂直に立てて搭載する方
法等が考案され、マザーボード3の面積を縮小化し、機
器を小型化するようにしていた。[0003] For this reason, as shown in FIG. 6, these semiconductor ICs are used in a desktop personal computer or a workstation.
1 was mounted on a small daughter board 2, and a method of mounting the daughter board 2 vertically on the motherboard 3 was devised. The area of the motherboard 3 was reduced, and the size of the device was reduced. .
【0004】一方、情報機器のうち携帯電話、ノート型
パソコン等の携帯に用いられるものでは、携帯性の向上
を図るために上述したような方法をとることができな
い。このため、例えば図7に示すように表面と裏面に端
子を有する同一構造の半導体パッケージを積層して実装
することが行われている。すなわち、上側の半導体パッ
ケージ4の裏面の端子4bと、下側の半導体パッケージ
5の表面の端子5aとが接続されるため、基板を用いる
ことなく、最短距離で半導体パッケージ4,5同士を接
続することができる。なお、端子4aと端子4b及び端
子5aと端子5bとは半導体パッケージ内部で接続され
ている。また、図7中6は例えばメモリIC等の半導体
ICを示している。[0004] On the other hand, among information devices used for carrying such as mobile phones and notebook computers, the above-described method cannot be used in order to improve portability. For this reason, for example, as shown in FIG. 7, semiconductor packages having the same structure having terminals on the front and back surfaces are stacked and mounted. That is, since the terminals 4b on the back surface of the upper semiconductor package 4 and the terminals 5a on the front surface of the lower semiconductor package 5 are connected, the semiconductor packages 4 and 5 are connected at the shortest distance without using a substrate. be able to. The terminals 4a and 4b and the terminals 5a and 5b are connected inside the semiconductor package. In FIG. 7, reference numeral 6 denotes a semiconductor IC such as a memory IC.
【0005】[0005]
【発明が解決しようとする課題】上記した従来の半導体
パッケージ4,5を用いた実装構造では、次のような問
題があった。例えば、半導体パッケージ4の端子4bが
パッケージ内部のメモリIC6を制御するための端子で
ある場合、同一構造を有する半導体パッケージ5を重ね
て実装すると、上側の半導体パッケージ4の制御信号と
下側の半導体パッケージ5の制御信号Aが共に端子5a
に接続されることとなる。このため、単純に2つの半導
体パッケージ4,5を重ねて実装すると、本来独立でな
ければならない制御信号が互いに接続されて機能しなく
なる。The mounting structure using the conventional semiconductor packages 4 and 5 has the following problems. For example, when the terminal 4b of the semiconductor package 4 is a terminal for controlling the memory IC 6 inside the package, if the semiconductor packages 5 having the same structure are mounted on top of each other, the control signal of the upper semiconductor package 4 and the lower semiconductor The control signal A of the package 5 is both terminals 5a
Will be connected. For this reason, if the two semiconductor packages 4 and 5 are simply mounted on top of each other, the control signals, which should be independent, are connected to each other and do not function.
【0006】したがって、半導体パッケージ4の端子4
bは半導体パッケージ5の端子5aに接続せず、基板に
ジャンパ線を介して接続するか、同じメモリIC6であ
りながら制御信号の端子位置を変更した数種類の半導体
チップを製作する必要があった。このため、コストが高
くなったり、小型化が困難になる等の問題があった。Therefore, the terminal 4 of the semiconductor package 4
b has to be connected to the substrate via a jumper line without connecting to the terminal 5a of the semiconductor package 5, or to manufacture several kinds of semiconductor chips in which the same memory IC 6 is used but the terminal position of the control signal is changed. For this reason, there were problems such as an increase in cost and difficulty in downsizing.
【0007】そこで、本発明は同一構造を有する半導体
パッケージを積層して実装する場合であっても、各パッ
ケージ内に接続されたICの所定の端子を独立して入出
力させることができる半導体パッケージ及び半導体パッ
ケージの実装構造を提供することを目的としている。Accordingly, the present invention provides a semiconductor package which can independently input and output predetermined terminals of an IC connected in each package, even when semiconductor packages having the same structure are stacked and mounted. And a semiconductor package mounting structure.
【0008】[0008]
【課題を解決するための手段】上記課題を解決し目的を
達成するために、請求項1に記載された発明は、半導体
チップと、前記半導体チップを封止する樹脂からなる本
体部と、前記本体部の一方の主面に設けられた複数の第
1の端子と、前記本体部の他方の主面に設けられた複数
の第2の端子とを具備し、前記複数の第1の端子から選
択された少なくとも1個の第1の端子は前記半導体チッ
プを介して前記前記第2の端子に一対ずつ電気的に接続
されて第1信号回路をなし、且つ、前記第1信号回路以
外の第1の端子から選択された複数の第1の端子は前記
半導体チップを介さずして前記第2の端子に一対ずつ電
気的に接続されて第2信号回路をなし、且つ、前記第1
信号回路及び前記第2信号回路以外の前記第1の端子の
うち少なくとも1個は前記半導体チップに電気的に接続
され第3信号回路をなしている。In order to solve the above-mentioned problems and to achieve the object, an invention according to claim 1 comprises a semiconductor chip, a main body made of resin for sealing the semiconductor chip, and A plurality of first terminals provided on one main surface of the main body, and a plurality of second terminals provided on the other main surface of the main body; At least one selected first terminal is electrically connected to the second terminal via the semiconductor chip in pairs, forming a first signal circuit, and a first signal circuit other than the first signal circuit. A plurality of first terminals selected from one terminal are electrically connected to the second terminals one by one without interposing the semiconductor chip to form a second signal circuit, and
At least one of the first terminals other than the signal circuit and the second signal circuit is electrically connected to the semiconductor chip to form a third signal circuit.
【0009】請求項2に記載された発明は、請求項1に
記載された発明において、前記第2信号回路は、フレキ
シブル基板により形成されている。請求項3に記載され
た発明は、請求項1に記載された発明において、前記第
2信号回路は、リードフレームにより形成されている。According to a second aspect of the present invention, in the first aspect, the second signal circuit is formed of a flexible substrate. According to a third aspect of the present invention, in the first aspect of the invention, the second signal circuit is formed by a lead frame.
【0010】請求項4に記載された発明は、請求項1に
記載された発明において、前記第3信号回路は、前記半
導体チップに制御信号を印加するためのものである。請
求項5に記載された発明は、請求項1に記載された発明
において、前記第2の端子は、前記第1信号回路をなす
第1の端子及び前記第2信号回路をなす第1の端子の両
方に電気的に接続されている。According to a fourth aspect of the present invention, in the first aspect, the third signal circuit is for applying a control signal to the semiconductor chip. In the invention described in claim 5, in the invention described in claim 1, the second terminal is a first terminal forming the first signal circuit and a first terminal forming the second signal circuit. Both are electrically connected.
【0011】請求項6に記載された発明は、請求項1に
記載された発明において、前記第1の端子は基板に突設
されたバンプ電極であり、前記基板の前記バンプ電極が
突設された面に対して反対側の面には前記半導体チップ
が取付けられている。According to a sixth aspect of the present invention, in the first aspect of the invention, the first terminal is a bump electrode protruding from a substrate, and the bump electrode of the substrate is protruding from the substrate. The semiconductor chip is attached to the surface opposite to the surface.
【0012】請求項7に記載された発明は、請求項1に
記載された発明において、前記各第1信号回路をなす前
記第1の端子及び前記第2の端子は、前記本体部の主面
に直角方向に透視した際に、重なる位置に配置されてい
る。According to a seventh aspect of the present invention, in the first aspect, the first terminal and the second terminal forming each of the first signal circuits are connected to a main surface of the main body. When viewed through in a direction perpendicular to the direction, it is arranged at an overlapping position.
【0013】請求項8に記載された発明は、請求項1に
記載された発明において、前記各第2信号回路をなす前
記第1の端子及び前記第2の端子は、前記本体部の主面
に直角方向に透視した際に、各別に重ならない位置に配
置されている。According to an eighth aspect of the present invention, in the first aspect, the first terminal and the second terminal forming each of the second signal circuits are connected to a main surface of the main body. Are arranged at positions not overlapping each other when viewed in a direction perpendicular to the direction.
【0014】請求項9に記載された発明は、半導体チッ
プと、前記半導体チップを封止する樹脂からなる本体部
とを具備する半導体パッケージを複数個積層してなる半
導体パッケージの実装構造において、前記半導体パッケ
ージは、前記本体部の一方の主面に設けられた複数の第
1の端子と、前記本体部の他方の主面に設けられた複数
の第2の端子とを具備し、前記複数の第1の端子から選
択された少なくとも1個の第1の端子は前記半導体チッ
プを介して前記第2の端子に一対ずつ電気的に接続され
て第1信号回路をなし、且つ、前記第1信号回路以外の
第1の端子から選択された複数の第1の端子は前記半導
体チップを介さずして前記第2の端子に一対ずつ電気的
に接続されて第2信号回路をなし、且つ、前記第1信号
回路及び前記第2信号回路以外の前記第1の端子のうち
少なくとも1個は前記半導体チップに電気的に接続され
第3信号回路をなし、前記積層された複数個の半導体パ
ッケージは、隣接する互いの前記第1の端子と前記第2
の端子とが接合されて前記各半導体パッケージの前記第
1信号回路及び前記第2信号回路どうしが電気的に接続
されているとともに、前記各半導体パッケージの第2信
号回路の内少なくとも1本は隣接する前記半導体パッケ
ージの前記第3信号回路に電気的に接続されている。According to a ninth aspect of the present invention, in the semiconductor package mounting structure, a plurality of semiconductor packages each including a semiconductor chip and a main body made of a resin sealing the semiconductor chip are stacked. The semiconductor package includes a plurality of first terminals provided on one main surface of the main body, and a plurality of second terminals provided on the other main surface of the main body. At least one first terminal selected from the first terminals is electrically connected to the second terminal via the semiconductor chip one by one to form a first signal circuit, and the first signal The plurality of first terminals selected from the first terminals other than the circuit are electrically connected to the second terminals one by one without interposing the semiconductor chip to form a second signal circuit, and A first signal circuit and the second signal circuit; At least one of the first terminals other than the signal circuit is electrically connected to the semiconductor chip to form a third signal circuit, and the plurality of stacked semiconductor packages are adjacent to each other in the first signal path. Terminal and the second
And the first signal circuit and the second signal circuit of each semiconductor package are electrically connected to each other, and at least one of the second signal circuits of each semiconductor package is adjacent to the first signal circuit and the second signal circuit of each semiconductor package. Electrically connected to the third signal circuit of the semiconductor package.
【0015】請求項10に記載された発明は、請求項9
に記載された発明において、前記第1信号回路は、前記
各半導体パッケージとの間で同時的に入出力される共通
信号の導通路である。The invention described in claim 10 is the ninth invention.
In the invention described in (1), the first signal circuit is a conduction path for a common signal input / output simultaneously with each of the semiconductor packages.
【0016】請求項11に記載された発明は、請求項9
に記載された発明において、前記第2信号回路は、前記
各半導体パッケージとの間で、前記第3信号回路を介し
て、選択的に入出力される信号の導通路である。The invention described in claim 11 is the ninth invention.
In the invention described in (1), the second signal circuit is a conduction path for a signal selectively input / output to / from each of the semiconductor packages via the third signal circuit.
【0017】[0017]
【発明の実施の形態】図1は、本発明の一実施の形態に
係る半導体パッケージの実装構造を模式的に示す図であ
る。図1中10A〜10Dは同一種類の半導体パッケー
ジ、20は別の種類の半導体パッケージ、30はプリン
ト基板を示している。FIG. 1 is a diagram schematically showing a mounting structure of a semiconductor package according to an embodiment of the present invention. In FIG. 1, 10A to 10D denote the same type of semiconductor package, 20 denotes another type of semiconductor package, and 30 denotes a printed circuit board.
【0018】半導体パッケージ10A〜10Dは同一構
造であるので、半導体パッケージ10Aについてのみ説
明し、他の半導体パッケージ10B〜10Dについては
同一機能部分には同一符号を付しその詳細な説明は省略
する。半導体パッケージ10Aは、後述するメモリIC
16を封止する例えばエポキシ樹脂等からなるパッケー
ジ本体11と、このパッケージ本体11の表面に設けら
れた表面端子12a〜12gと、裏面に設けられたバン
プ電極をなす裏面端子14a〜14gとを備えている。
表面端子12a〜12gと裏面端子14a〜14gとは
それぞれパッケージ本体11を積層方向に透視した際に
重なる位置に配置されている。Since the semiconductor packages 10A to 10D have the same structure, only the semiconductor package 10A will be described, and the other semiconductor packages 10B to 10D will be given the same reference numerals for the same functional portions and will not be described in detail. The semiconductor package 10A includes a memory IC described later.
A package body 11 made of, for example, epoxy resin or the like for sealing the package body 16, front terminals 12a to 12g provided on the surface of the package body 11, and back terminals 14a to 14g forming bump electrodes provided on the back surface. ing.
The front terminals 12a to 12g and the rear terminals 14a to 14g are arranged at positions overlapping each other when the package body 11 is seen through in the stacking direction.
【0019】表面端子12aと裏面端子14aとは接続
され、かつ、メモリIC16の端子16aと接続されて
いる。また、表面端子12bと裏面端子14bとは接続
され、メモリIC16のデータ信号用の端子16bと接
続されている。これら表面端子12a,12b及び裏面
端子14a,14bは、第1信号回路を形成している。The front terminal 12a and the back terminal 14a are connected to each other and to the terminal 16a of the memory IC 16. The front terminal 12b and the back terminal 14b are connected to each other, and are connected to the data signal terminal 16b of the memory IC 16. The front terminals 12a, 12b and the back terminals 14a, 14b form a first signal circuit.
【0020】さらに、表面端子12cは、メモリIC1
6に接続されて第3信号回路を形成している。同様に表
面端子12dと裏面端子14e、表面端子12eと裏面
端子14fと、表面端子12fと裏面端子14gとが接
続されて第2信号回路を形成しているとともに、パッケ
ージ本体11を積層方向に透視した際に重ならない位置
に配置されている。Further, the surface terminal 12c is connected to the memory IC 1
6 to form a third signal circuit. Similarly, the front terminal 12d and the back terminal 14e, the front terminal 12e and the back terminal 14f, and the front terminal 12f and the back terminal 14g are connected to form a second signal circuit, and the package body 11 is seen through in the stacking direction. It is placed in a position that does not overlap when it is done.
【0021】図2は半導体パッケージ10A(10B〜
10D)の内部構造を示す図である。すなわち、パッケ
ージ本体11内には配線基板15と、メモリIC(半導
体IC)16と、フレキシブル基板17とが配置されて
いる。FIG. 2 shows a semiconductor package 10A (10B to 10B).
It is a figure which shows the internal structure of 10D). That is, a wiring board 15, a memory IC (semiconductor IC) 16, and a flexible board 17 are arranged in the package body 11.
【0022】例えばガラスエポキシ樹脂製の配線基板1
5には、表面に端子15a〜15g、裏面には上述した
バンプ電極である裏面端子14a〜14gが設けられて
いる。そして、端子15a〜15bは、基板15に設け
られたバイヤ(Via)19を介して、端子14a〜1
4cに接続されている。また、配線基板15の表面に接
続部15pが設けられている。端子15cと端子14c
とは配線基板15内部で接続されている。また、接続部
15pと端子14dとは配線基板15内部のバイヤ15
tを介して接続されている。For example, a wiring board 1 made of glass epoxy resin
5 has terminals 15a to 15g on the front surface and rear terminals 14a to 14g, which are the above-described bump electrodes, on the rear surface. The terminals 15 a to 15 b are connected to the terminals 14 a to 1 via vias (Via) 19 provided on the substrate 15.
4c. In addition, a connection portion 15p is provided on the surface of the wiring board 15. Terminal 15c and terminal 14c
Are connected inside the wiring board 15. The connection portion 15p and the terminal 14d are connected to the via 15 inside the wiring board 15.
are connected via t.
【0023】メモリIC16には、裏面にバンプ電極で
ある端子16a〜16gが設けられており、表面には後
述するフレキシブル基板17の裏面が接着剤(不図示)
を介して接着されている。なお、端子16a〜16bは
ロジック信号やデータ信号等の各半導体パッケージ10
A〜10Dにおいて必要とする共通信号用の端子、端子
16CはICを選択する等の制御信号用の端子である。The memory IC 16 is provided with terminals 16a to 16g, which are bump electrodes, on the back surface, and has an adhesive (not shown) on the back surface of a flexible substrate 17 described later.
Is glued through. The terminals 16a to 16b are connected to each semiconductor package 10 such as a logic signal and a data signal.
A terminal for common signals required in A to 10D and a terminal 16C are terminals for control signals for selecting an IC.
【0024】なお、端子16d〜16gは、この実施形
態においては、遊び端子となっている(任意に、端子1
6a〜16cと同様の機能をもたせることができる)。
フレキシブル基板17には、表面に上述した表面端子1
2a〜12gが形成されるとともに、裏面には配線基板
15の接続部15pにそれぞれ接続された接続部17p
が設けられている。フレキシブル基板17は、表面端子
12c〜12fを接続部17pを介して裏面端子14d
〜14gに接続している。また、第1信号回路をなす端
子14a,14bは、メモリIC16内部及びフレキシ
ブル基板17を介して、直接、表面端子12a,12b
に接続されている。なお、図1では表面端子12dと裏
面端子14dとの接続についてのみ示している。In this embodiment, the terminals 16d to 16g are idle terminals (arbitrarily, the terminal 1
6a to 16c can have the same function).
The flexible substrate 17 has the surface terminal 1 described above on the surface.
2a to 12g are formed, and the connection portions 17p respectively connected to the connection portions 15p of the wiring board 15 are formed on the back surface.
Is provided. The flexible substrate 17 connects the front terminals 12c to 12f to the rear terminals 14d via the connection portions 17p.
~ 14g. The terminals 14a and 14b constituting the first signal circuit are directly connected to the surface terminals 12a and 12b via the inside of the memory IC 16 and the flexible substrate 17.
It is connected to the. FIG. 1 shows only the connection between the front terminal 12d and the rear terminal 14d.
【0025】メモリIC16の各端子16a〜16gと
配線基板15の各端子15a〜15gとは接続されてい
る。プリント基板30は、端子31a〜31gと、端子
31aに接続されたロジック回路32と、端子31bに
接続されたデータ回路33と、端子31c〜31gに接
続された制御回路34とに接続されている。The terminals 16a to 16g of the memory IC 16 and the terminals 15a to 15g of the wiring board 15 are connected. The printed circuit board 30 is connected to terminals 31a to 31g, a logic circuit 32 connected to the terminal 31a, a data circuit 33 connected to the terminal 31b, and a control circuit 34 connected to the terminals 31c to 31g. .
【0026】半導体パッケージ10Aの裏面端子14a
〜14gはプリント基板30の端子31a〜31gに接
続され、表面端子12a〜12gは半導体パッケージ1
0Bの裏面端子14a〜14gに接続されている。Back terminal 14a of semiconductor package 10A
To 14 g are connected to terminals 31 a to 31 g of the printed circuit board 30, and the surface terminals 12 a to 12 g are connected to the semiconductor package 1.
0B are connected to the back terminals 14a to 14g.
【0027】同様に半導体パッケージ10Bの表面端子
12a〜12gは半導体パッケージ10Cの裏面端子1
4a〜14gに接続され、半導体パッケージ10Cの表
面端子12a〜12gは半導体パッケージ10Dの裏面
端子14a〜14gに接続されている。Similarly, front terminals 12a to 12g of semiconductor package 10B are connected to rear terminals 1 of semiconductor package 10C.
4a to 14g, and front terminals 12a to 12g of the semiconductor package 10C are connected to rear terminals 14a to 14g of the semiconductor package 10D.
【0028】一方、半導体パッケージ10Dの表面端子
12a〜12gは半導体パッケージ20の裏面端子22
a〜22gに接続されている。このように構成された半
導体パッケージ10A〜10D,20をプリント基板3
0に積層して実装した場合の信号の流れは次のようなも
のとなる。すなわち、半導体パッケージ20のロジック
ICの信号は裏面端子22aから半導体パッケージ10
Dの表面端子12a、裏面端子14a、半導体パッケー
ジ10Cの表面端子12a、裏面端子14a、半導体パ
ッケージ10Bの表面端子12a、裏面端子14a、半
導体パッケージ10Aの表面端子12a、裏面端子14
aを通過し、プリント基板30の端子31aを介してロ
ジック回路32に到達する。もちろん、ロジック回路3
2からの出力信号も同一経路で印加される。On the other hand, front terminals 12a to 12g of semiconductor package 10D are connected to rear terminals 22a of semiconductor package 20.
a to 22g. The semiconductor packages 10A to 10D and 20 configured as described above are
The signal flow when the components are stacked and mounted on 0 is as follows. That is, the signal of the logic IC of the semiconductor package 20 is transmitted from the back surface terminal 22 a to the semiconductor package 10.
D front terminal 12a, back terminal 14a, front terminal 12a, back terminal 14a of semiconductor package 10C, front terminal 12a, back terminal 14a of semiconductor package 10B, front terminal 12a of semiconductor package 10A, back terminal 14
a, and reaches the logic circuit 32 via the terminal 31 a of the printed circuit board 30. Of course, logic circuit 3
2 are also applied along the same path.
【0029】また、半導体パッケージ10DのメモリI
C16のデータ信号は、裏面端子14bから半導体パッ
ケージ10Cの表面端子12b、裏面端子14b、半導
体パッケージ10Bの表面端子12b、裏面端子14
b、半導体パッケージ10Aの表面端子12b、裏面端
子14bを通過し、プリント基板30の端子31bを介
してデータ回路33に到達する。もちろん、データ回路
33からの出力信号も同様の経路で印加される。また、
半導体パッケージ10CのメモリIC16のデータ信号
は、裏面端子14bから半導体パッケージ10Bの表面
端子12b、裏面端子14b、半導体パッケージ10A
の表面端子12b、裏面端子14bを通過し、プリント
基板30の端子31bを介してデータ回路33に到達す
る。同様にして半導体パッケージ10B,10Aの各メ
モリIC16のデータ信号もデータ回路33に到達す
る。もちろん、データ回路33からの出力信号も同様の
経路で印加される。The memory I of the semiconductor package 10D
The data signal of C16 is transmitted from the back terminal 14b to the front terminal 12b, the back terminal 14b of the semiconductor package 10C, the front terminal 12b of the semiconductor package 10B, and the back terminal 14.
b, pass through the front terminal 12b and the rear terminal 14b of the semiconductor package 10A, and reach the data circuit 33 via the terminal 31b of the printed circuit board 30. Of course, the output signal from the data circuit 33 is applied along the same route. Also,
The data signal of the memory IC 16 of the semiconductor package 10C is transmitted from the back terminal 14b to the front terminal 12b, the back terminal 14b of the semiconductor package 10B, and the semiconductor package 10A.
, And reaches the data circuit 33 via the terminal 31 b of the printed circuit board 30. Similarly, the data signal of each memory IC 16 of the semiconductor packages 10B and 10A also reaches the data circuit 33. Of course, the output signal from the data circuit 33 is applied along the same route.
【0030】一方、半導体パッケージ10Aを選択させ
るための制御信号は、制御回路34から、端子31c,
端子14c及び端子16cを介して、メモリIC16に
印加される。また、半導体パッケージ10Bを選択させ
るための制御信号は制御回路34から、端子31d、半
導体パッケージ10Aの端子15p,12cを経由し、
半導体パッケージ10Bの端子14cに入力し、この半
導体パッケージ10BのメモリIC16が選択される。
さらに、半導体パッケージ10Cの制御信号は、制御回
路34から端子31e,半導体パッケージ10Aの端子
14e,15p,12d及び半導体パッケージ10Bの
端子14d,15p,12cを介して、半導体パッケー
ジ10Cの端子14cに入力し、この半導体パッケージ
10CのICメモリ16が選択される。さらにまた、半
導体パッケージ10Dを選択させるための制御信号は、
制御回路34から、端子31f、半導体パッケージ10
Aの端子14f,15p,12e及び半導体パッケージ
10Bの端子14e,15p,12d及び半導体パッケ
ージ10Cの端子14d,15p,12cを介して、半
導体パッケージ10Dの端子14cに入力し、この半導
体パッケージ10DのICメモリ16が選択される。同
様にして、半導体パッケージ20のICメモリ16も選
択される。On the other hand, a control signal for selecting the semiconductor package 10A is sent from the control circuit 34 to the terminals 31c and 31c.
The voltage is applied to the memory IC 16 via the terminals 14c and 16c. Further, a control signal for selecting the semiconductor package 10B is transmitted from the control circuit 34 via the terminal 31d and the terminals 15p and 12c of the semiconductor package 10A.
The data is input to the terminal 14c of the semiconductor package 10B, and the memory IC 16 of the semiconductor package 10B is selected.
Further, a control signal of the semiconductor package 10C is input from the control circuit 34 to the terminal 14c of the semiconductor package 10C via the terminal 31e, the terminals 14e, 15p, 12d of the semiconductor package 10A and the terminals 14d, 15p, 12c of the semiconductor package 10B. Then, the IC memory 16 of the semiconductor package 10C is selected. Furthermore, a control signal for selecting the semiconductor package 10D is:
From the control circuit 34, the terminal 31f, the semiconductor package 10
A terminal 14f, 15p, 12e of terminal A, terminal 14e, 15p, 12d of semiconductor package 10B and terminal 14d, 15p, 12c of semiconductor package 10C are input to terminal 14c of semiconductor package 10D, and IC of this semiconductor package 10D The memory 16 is selected. Similarly, the IC memory 16 of the semiconductor package 20 is selected.
【0031】すなわち、データ信号のように異なるメモ
リIC16の端子16bに同種の信号が入出力されても
よい場合には、各半導体パッケージ10A〜10Dの裏
面端子14bはプリント基板30の同一の端子31bに
接続されることとなる。That is, when the same type of signal may be input / output to / from the terminal 16b of the different memory IC 16 like a data signal, the back terminals 14b of the semiconductor packages 10A to 10D are connected to the same terminal 31b of the printed circuit board 30. Will be connected.
【0032】一方、各メモリICを選択するための制御
信号の場合には、隣接する半導体パッケージ内において
裏面端子14cから裏面端子14dへ、裏面端子14d
から裏面端子14eへ、裏面端子14eから裏面端子1
4fへ、それぞれシフトされることとなる。このため、
半導体パッケージ10A〜10Dの各メモリIC16の
制御信号はそれぞれプリント基板30の端子31c〜3
1fに異なる信号をプリント制御回路34から入出力さ
せることができる。On the other hand, in the case of a control signal for selecting each memory IC, the back terminal 14c is transferred from the back terminal 14c to the back terminal 14d in the adjacent semiconductor package.
From the back terminal 14e to the back terminal 14e.
4f. For this reason,
The control signals of the respective memory ICs 16 of the semiconductor packages 10A to 10D are transmitted to the terminals 31c to 3c of the printed circuit board 30, respectively.
A different signal can be input / output from the print control circuit 34 to 1f.
【0033】したがって、本来独立でなければならない
制御信号が互いに接続されて機能しなくなることを避げ
ることができる。このため、同一構造の半導体パッケー
ジを単純に重ねて実装するだけで対応できる。Therefore, it is possible to prevent the control signals that should be independent from each other from being connected to each other and not functioning. For this reason, it can be dealt with simply by mounting semiconductor packages having the same structure in an overlapping manner.
【0034】図3及び図4は端子をシフトさせるための
半導体パッケージの構造についての変形例を示す図であ
る。図3に示すように半導体パッケージ40は、基本配
線構造は、図2と同じであり、ガラスエポキシ樹脂製ま
たはセラミック製のリジッド基板41に半導体IC42
がフリップチッブ接続されている。リジッド基板41に
は下面入出力端子43a〜43eが形成されている。ま
た、上面入出力端子44a〜44eを形成したフレキシ
ブル基板45が半導体IC42より外周部でリジッド基
板41に接続されている。フレキシブル基板45の他端
は半導体IC42の上に固定されている。また、図3中
46はリジット基板41上の配線を示している。上面入
出力端子44b〜44eはフレキシブル基板45及びこ
のフレキシブル基板45表面に設けられた配線46を介
して下面入出力端子43a〜43fに接続されている。
下面入出力端子43a〜43fは、基板41の内部に設
けられたビア(Via)49を介して配線46に電気的
に接続されている。なお、下面入出力端子43a〜43
eは、バンプ電極であってもよい。FIGS. 3 and 4 are views showing modifications of the structure of a semiconductor package for shifting terminals. As shown in FIG. 3, a semiconductor package 40 has the same basic wiring structure as that of FIG. 2, and a semiconductor IC 42 is mounted on a rigid substrate 41 made of glass epoxy resin or ceramic.
Are flip-chip connected. On the rigid substrate 41, lower surface input / output terminals 43a to 43e are formed. A flexible substrate 45 on which upper surface input / output terminals 44a to 44e are formed is connected to the rigid substrate 41 at an outer peripheral portion of the semiconductor IC 42. The other end of the flexible board 45 is fixed on the semiconductor IC 42. In FIG. 3, reference numeral 46 denotes a wiring on the rigid substrate 41. The upper input / output terminals 44b to 44e are connected to the lower input / output terminals 43a to 43f via a flexible board 45 and a wiring 46 provided on the surface of the flexible board 45.
The lower surface input / output terminals 43 a to 43 f are electrically connected to the wiring 46 via vias (Via) 49 provided inside the substrate 41. The lower surface input / output terminals 43a to 43
e may be a bump electrode.
【0035】このように構成された半導体パッケージ4
0は、表面に設けられた配線46を介して接続するよう
にしているので、図2の半導体パッケージよりも製造が
容易で、製造コストが安くなる利点を有している。The semiconductor package 4 configured as described above
0 is connected via the wiring 46 provided on the surface, and therefore has an advantage that the manufacturing is easier and the manufacturing cost is lower than that of the semiconductor package of FIG.
【0036】さらに、図4に示すように半導体パッケー
ジ50は、基本配線構造は、図2と同じであり、ガラス
エポキシ樹脂製またはセラミック製のリジッド基板51
に半導体IC52がワイヤボンディングされている。リ
ジッド基板51には下面入出力端子53a〜53eが形
成されており、ワイヤボンディングを含む半導体IC5
2の高さより高く成形されたリードフレーム54a〜5
4e(54bは不図示)がリジット基板51の内部に設
けられたバイヤ(Via)59を介してそれぞれ下面入
出力端子53a〜53eに接続されている。なお、下面
入出力端子53a〜53eは、バンプ電極であってもよ
い。Further, as shown in FIG. 4, the semiconductor package 50 has the same basic wiring structure as that of FIG. 2, and has a rigid substrate 51 made of glass epoxy resin or ceramic.
The semiconductor IC 52 is wire-bonded. Lower surface input / output terminals 53a to 53e are formed on the rigid substrate 51, and a semiconductor IC 5 including wire bonding is provided.
Lead frames 54a-5 formed higher than the height 2
4e (54b is not shown) are connected to lower surface input / output terminals 53a to 53e via vias (Via) 59 provided inside the rigid substrate 51, respectively. Note that the lower surface input / output terminals 53a to 53e may be bump electrodes.
【0037】リードフレーム54a〜54eの先端は、
例えばポッティングで形成されたパッケージ本体55の
上面に露出して、上面入出力端子56a〜56eを形成
している。The tips of the lead frames 54a to 54e
For example, upper surface input / output terminals 56a to 56e are exposed on the upper surface of the package body 55 formed by potting.
【0038】このように構成された半導体パッケージ5
0を積層して実装することにより、上述した実施の形態
と同様の効果を得ることができる。図5は、表面端子と
裏面端子との接続の変形例を示す概念図である。すなわ
ち、半導体パッケージ60は、パッケージ本体61を備
え、表面端子62a〜62f及び裏面端子63a〜63
fが設けられている。表面端子62aと裏面端子63
a、表面端子62bと裏面端子63b、表面端子62c
と裏面端子63c,63d、表面端子62eと裏面端子
63f、表面端子62fと裏面端子63fがそれぞれ接
続されている。すなわち、このような半導体パッケージ
60を積層して実装することにより、上述した実施の形
態と同様の効果を得ることができる。The semiconductor package 5 configured as described above
By stacking and mounting 0s, the same effect as in the above-described embodiment can be obtained. FIG. 5 is a conceptual diagram showing a modification of the connection between the front terminal and the rear terminal. That is, the semiconductor package 60 includes the package body 61, and has the front terminals 62a to 62f and the rear terminals 63a to 63f.
f is provided. Front terminal 62a and back terminal 63
a, front terminal 62b and back terminal 63b, front terminal 62c
And the back terminals 63c and 63d, the front terminal 62e and the back terminal 63f, and the front terminal 62f and the back terminal 63f, respectively. That is, by stacking and mounting such semiconductor packages 60, the same effect as in the above-described embodiment can be obtained.
【0039】すなわち、積層した各半導体パッケージ6
0において、共通して入出力するデータ信号等は、端子
62a,63a及び端子62b,63bを利用する他
に、端子が不足したときには、端子62c,63c及び
端子62f,63fを利用する。他方、チップ選択信号
などの制御信号を所望のパッケージ60にのみ印加した
場合には、前述したと同様にして、端子62c,63d
及び端子62e,63fを利用する。この変形例は、端
子を共通信号用としても、各別の制御信号用としても、
兼用できる利点を有している。That is, the stacked semiconductor packages 6
At 0, data signals and the like commonly input and output use the terminals 62a and 63a and the terminals 62b and 63b, and use the terminals 62c and 63c and the terminals 62f and 63f when the terminals are insufficient. On the other hand, when a control signal such as a chip selection signal is applied only to a desired package 60, terminals 62c and 63d
And terminals 62e and 63f. In this modification, even if the terminal is used for a common signal or for each control signal,
It has the advantage that it can be shared.
【0040】さらに、第1信号回路をなす第1の端子及
び第2の端子は1個ずつでもよいし、第3信号回路をな
す第1の端子は複数個であってもよい。さらにまた、第
1信号回路をなす一対の第1の端子及び第2の端子が、
積層方向に重なり合う位置にあるという条件、及び、第
2信号回路をなす一対の第1及び第2の端子が積層方向
に重なり合わない位置にあるという条件は、複数の第2
の信号回路のうちから選択された1つの回路が隣接する
半導体パッケージの第3信号回路に接続するという条件
を満足する限りにおいて変更可能である。Further, the number of the first terminal and the number of the second terminal constituting the first signal circuit may be one, and the number of the first terminals constituting the third signal circuit may be plural. Still further, the pair of first and second terminals forming the first signal circuit are:
The condition that the pair of first and second terminals constituting the second signal circuit are located at positions where they do not overlap in the stacking direction, and the condition that the pair of first and second terminals forming the second signal circuit are located at positions that do not overlap in the stacking direction.
It can be changed as long as one of the signal circuits of the above satisfies the condition of being connected to the third signal circuit of the adjacent semiconductor package.
【0041】なお、本発明は上述した実施の形態に限定
されるものではない。すなわち、上記実施の例では半導
体ICとの接続では代表的な接続方法を用いて説明した
が、実施例以外の接続方法でも良い。また、リジッド基
板の代わりにフレキシブル基板を用いてもよい。このほ
か、本発明の要旨を逸脱しない範囲で種々変形実施可能
であるのは勿論である。The present invention is not limited to the above embodiment. That is, in the above embodiment, the connection with the semiconductor IC has been described using a typical connection method, but a connection method other than the embodiment may be used. Further, a flexible substrate may be used instead of the rigid substrate. In addition, it goes without saying that various modifications can be made without departing from the spirit of the present invention.
【0042】[0042]
【発明の効果】本発明の半導体パッケージによれば、こ
れを多段に積層したとしても、ジャンパー線を用いた
り、端子位置を変更した数種類の半導体パッケージを用
いることなく、単純に多段積層した状態でも、積層した
各半導体パッケージごとに、信号の入出力が可能であ
る。これにより、基板占有面積を大幅に縮小することが
でき、高密度実装に寄与するところ大である。According to the semiconductor package of the present invention, even if the semiconductor packages are stacked in multiple stages, even if they are simply stacked in multiple stages without using jumper wires or using several types of semiconductor packages with changed terminal positions. Signals can be input and output for each of the stacked semiconductor packages. As a result, the area occupied by the substrate can be significantly reduced, which greatly contributes to high-density mounting.
【0043】一方、本発明の半導体パッケージの実装構
造によれば、ジャンバー線を用いたり、端子位置を変更
した数種類の半導体パッケージを用いることなく、各半
導体パッケージを単純に積層しただけで、各半導体パッ
ケージごとに信号の入出力が可能となる。これにより、
基板占有面積を大幅に縮小することができ、高密度実装
に寄与するところ大である。On the other hand, according to the mounting structure of the semiconductor package of the present invention, each semiconductor package is simply laminated without using a jumper wire or several types of semiconductor packages whose terminal positions are changed. Signal input / output is possible for each package. This allows
The area occupied by the substrate can be greatly reduced, which is a significant factor contributing to high-density mounting.
【図1】本発明の一実施の形態に係る半導体パッケージ
の実装構造を模式的に示す図。FIG. 1 is a diagram schematically showing a mounting structure of a semiconductor package according to an embodiment of the present invention.
【図2】同半導体パッケージを示す断面図。FIG. 2 is a sectional view showing the semiconductor package.
【図3】同半導体パッケージの第1の変形例を示す断面
図。FIG. 3 is a sectional view showing a first modification of the semiconductor package.
【図4】同半導体パッケージの第2の変形例を示す断面
図。FIG. 4 is a sectional view showing a second modification of the semiconductor package.
【図5】同半導体パッケージの第3の変形例を模式的に
示す図。FIG. 5 is a view schematically showing a third modification of the semiconductor package.
【図6】従来の卓上型の情報機器における半導体パッケ
ージの高密度実装構造を示す図。FIG. 6 is a diagram showing a high-density mounting structure of a semiconductor package in a conventional tabletop information device.
【図7】従来の半導体パッケージを模式的に示す図。FIG. 7 is a diagram schematically showing a conventional semiconductor package.
10A〜10D…半導体パッケージ 11…パッケージ本体 12a〜12g…表面端子 14a〜14g…裏面端子 16…メモリIC 20…半導体パッケージ 30…プリント基板 10A to 10D: Semiconductor package 11: Package body 12a to 12g: Front terminals 14a to 14g: Back terminals 16: Memory IC 20: Semiconductor package 30: Printed circuit board
Claims (11)
と、 前記本体部の他方の主面に設けられた複数の第2の端子
とを具備し、 前記複数の第1の端子から選択された少なくとも1個の
第1の端子は前記半導体チップを介して前記前記第2の
端子に一対ずつ電気的に接続されて第1信号回路をな
し、且つ、前記第1信号回路以外の第1の端子から選択
された複数の第1の端子は前記半導体チップを介さずし
て前記第2の端子に一対ずつ電気的に接続されて第2信
号回路をなし、且つ、前記第1信号回路及び前記第2信
号回路以外の前記第1の端子のうち少なくとも1個は前
記半導体チップに電気的に接続され第3信号回路をなし
ていることを特徴とする半導体パッケージ。1. A semiconductor chip, a main body made of a resin for sealing the semiconductor chip, a plurality of first terminals provided on one main surface of the main body, and another main terminal of the main body. A plurality of second terminals provided on a surface, and at least one first terminal selected from the plurality of first terminals is paired with the second terminal via the semiconductor chip. And a plurality of first terminals selected from first terminals other than the first signal circuit are electrically connected to each other without passing through the semiconductor chip. A pair of terminals is electrically connected to each other to form a second signal circuit, and at least one of the first terminals other than the first signal circuit and the second signal circuit is electrically connected to the semiconductor chip. Being connected to form a third signal circuit. Conductor package.
より形成されていることを特徴とする請求項1に記載の
半導体パッケージ。2. The semiconductor package according to claim 1, wherein said second signal circuit is formed of a flexible substrate.
り形成されていることを特徴とする請求項1に記載の半
導体パッケージ。3. The semiconductor package according to claim 1, wherein said second signal circuit is formed by a lead frame.
制御信号を印加するためのものであることを特徴とする
請求項1に記載の半導体パッケージ。4. The semiconductor package according to claim 1, wherein said third signal circuit is for applying a control signal to said semiconductor chip.
す第1の端子及び前記第2信号回路をなす第1の端子の
両方に電気的に接続されていることを特徴とする請求項
1に記載の半導体パッケージ。5. The semiconductor device according to claim 1, wherein the second terminal is electrically connected to both the first terminal forming the first signal circuit and the first terminal forming the second signal circuit. The semiconductor package according to claim 1.
電極であり、前記基板の前記バンプ電極が突設された面
に対して反対側の面には前記半導体チップが取付けられ
ていることを特徴とする請求項1に記載の半導体パッケ
ージ。6. The semiconductor device according to claim 1, wherein the first terminal is a bump electrode protruding from a substrate, and the semiconductor chip is attached to a surface of the substrate opposite to the surface from which the bump electrode protrudes. The semiconductor package according to claim 1, wherein:
及び前記第2の端子は、前記本体部の主面に直角方向に
透視した際に、重なる位置に配置されていることを特徴
とする請求項1に記載の半導体パッケージ。7. The apparatus according to claim 1, wherein the first terminal and the second terminal forming each of the first signal circuits are arranged at overlapping positions when viewed through the main surface of the main body in a direction perpendicular to the main surface. The semiconductor package according to claim 1, wherein:
及び前記第2の端子は、前記本体部の主面に直角方向に
透視した際に、各別に重ならない位置に配置されている
ことを特徴とする請求項1に記載の半導体パッケージ。8. The first terminal and the second terminal constituting each of the second signal circuits are arranged at positions that do not overlap with each other when viewed in a direction perpendicular to the main surface of the main body. The semiconductor package according to claim 1, wherein:
備する半導体パッケージを複数個積層してなる半導体パ
ッケージの実装構造において、 前記半導体パッケージは、 前記本体部の一方の主面に設けられた複数の第1の端子
と、 前記本体部の他方の主面に設けられた複数の第2の端子
とを具備し、 前記複数の第1の端子から選択された少なくとも1個の
第1の端子は前記半導体チップを介して前記第2の端子
に一対ずつ電気的に接続されて第1信号回路をなし、且
つ、前記第1信号回路以外の第1の端子から選択された
複数の第1の端子は前記半導体チップを介さずして前記
第2の端子に一対ずつ電気的に接続されて第2信号回路
をなし、且つ、前記第1信号回路及び前記第2信号回路
以外の前記第1の端子のうち少なくとも1個は前記半導
体チップに電気的に接続され第3信号回路をなし、 前記積層された複数個の半導体パッケージは、隣接する
互いの前記第1の端子と前記第2の端子とが接合されて
前記各半導体パッケージの前記第1信号回路及び前記第
2信号回路どうしが電気的に接続されているとともに、
前記各半導体パッケージの第2信号回路の内少なくとも
1本は隣接する前記半導体パッケージの前記第3信号回
路に電気的に接続されていることを特徴とする半導体パ
ッケージの実装構造。9. A semiconductor package mounting structure in which a plurality of semiconductor packages each including a semiconductor chip and a resin body encapsulating the semiconductor chip are stacked, wherein the semiconductor package comprises: A plurality of first terminals provided on one main surface; and a plurality of second terminals provided on the other main surface of the main body, wherein the plurality of first terminals are selected from the plurality of first terminals. At least one first terminal is electrically connected to the second terminal via the semiconductor chip one by one to form a first signal circuit, and from a first terminal other than the first signal circuit. The selected plurality of first terminals are electrically connected to the second terminals one by one without interposing the semiconductor chip to form a second signal circuit, and the first signal circuit and the second signal circuit are connected to each other. The first circuit other than the signal circuit At least one of the semiconductor chips is electrically connected to the semiconductor chip to form a third signal circuit; and the plurality of stacked semiconductor packages are adjacent to the first terminal and the second terminal. And the first signal circuit and the second signal circuit of each of the semiconductor packages are electrically connected to each other,
At least one of the second signal circuits of each of the semiconductor packages is electrically connected to the third signal circuit of an adjacent semiconductor package.
ケージとの間で同時的に入出力される共通信号の導通路
であることを特徴とする請求項9記載の半導体パッケー
ジの実装構造。10. The semiconductor package mounting structure according to claim 9, wherein said first signal circuit is a conduction path for a common signal input / output simultaneously with each of said semiconductor packages.
ケージとの間で、前記第3信号回路を介して、選択的に
入出力される信号の導通路であることを特徴とする請求
項9記載の半導体パッケージの実装構造。11. The semiconductor device according to claim 11, wherein the second signal circuit is a conduction path for a signal selectively input / output to / from each of the semiconductor packages via the third signal circuit. 10. The mounting structure of the semiconductor package according to 9.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9353500A JPH11186492A (en) | 1997-12-22 | 1997-12-22 | Semiconductor package and its mounting structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9353500A JPH11186492A (en) | 1997-12-22 | 1997-12-22 | Semiconductor package and its mounting structure |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH11186492A true JPH11186492A (en) | 1999-07-09 |
Family
ID=18431270
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9353500A Pending JPH11186492A (en) | 1997-12-22 | 1997-12-22 | Semiconductor package and its mounting structure |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH11186492A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6740964B2 (en) | 2000-11-17 | 2004-05-25 | Oki Electric Industry Co., Ltd. | Semiconductor package for three-dimensional mounting, fabrication method thereof, and semiconductor device |
US7061097B2 (en) | 2004-01-14 | 2006-06-13 | Kabushiki Kaisha Toshiba | Semiconductor device and manufacturing method for the same |
JP2006351565A (en) * | 2005-06-13 | 2006-12-28 | Shinko Electric Ind Co Ltd | Stacked semiconductor package |
KR100671950B1 (en) | 2005-06-17 | 2007-01-24 | 주식회사 유니세미콘 | Stack Package |
US7723839B2 (en) | 2005-06-10 | 2010-05-25 | Sharp Kabushiki Kaisha | Semiconductor device, stacked semiconductor device, and manufacturing method for semiconductor device |
EP2242094A1 (en) | 2009-04-17 | 2010-10-20 | Nxp B.V. | Foil and method for foil-based bonding and resulting package |
-
1997
- 1997-12-22 JP JP9353500A patent/JPH11186492A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6740964B2 (en) | 2000-11-17 | 2004-05-25 | Oki Electric Industry Co., Ltd. | Semiconductor package for three-dimensional mounting, fabrication method thereof, and semiconductor device |
US7029953B2 (en) | 2000-11-17 | 2006-04-18 | Oki Electric Industry Co., Ltd. | Semiconductor package for three-dimensional mounting, fabrication method thereof, and semiconductor device |
US7061097B2 (en) | 2004-01-14 | 2006-06-13 | Kabushiki Kaisha Toshiba | Semiconductor device and manufacturing method for the same |
US7723839B2 (en) | 2005-06-10 | 2010-05-25 | Sharp Kabushiki Kaisha | Semiconductor device, stacked semiconductor device, and manufacturing method for semiconductor device |
JP2006351565A (en) * | 2005-06-13 | 2006-12-28 | Shinko Electric Ind Co Ltd | Stacked semiconductor package |
KR100671950B1 (en) | 2005-06-17 | 2007-01-24 | 주식회사 유니세미콘 | Stack Package |
EP2242094A1 (en) | 2009-04-17 | 2010-10-20 | Nxp B.V. | Foil and method for foil-based bonding and resulting package |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8885356B2 (en) | Enhanced stacked microelectronic assemblies with central contacts and improved ground or power distribution | |
US9461015B2 (en) | Enhanced stacked microelectronic assemblies with central contacts | |
KR100689350B1 (en) | Signal redistribution using bridge layer for multichip module | |
JPH08504060A (en) | Module for an IC microprocessor, including an IC memory stack structurally combined with the IC microprocessor | |
EP0782191A2 (en) | Multi-level stacked integrated-circuit-chip assembly | |
JP2009111401A (en) | Stack semiconductor chip package | |
JPH09205283A (en) | Semiconductor module and memory module | |
US5569955A (en) | High density integrated circuit assembly combining leadframe leads with conductive traces | |
JPH09307058A (en) | Semiconductor device and an electronic device using the same | |
JPH11168150A (en) | Semiconductor integrated circuit device | |
JPH11186492A (en) | Semiconductor package and its mounting structure | |
KR20190094632A (en) | Semiconductor package | |
JPH1187400A (en) | Semiconductor device | |
EP0962976B1 (en) | Integrated circuit having a unique lead configuration | |
JP4754201B2 (en) | Semiconductor device | |
JPH11220091A (en) | Semiconductor device | |
JP2009188328A (en) | Semiconductor device | |
JPH05160333A (en) | Semiconductor integrated circuit device | |
JPS60154644A (en) | Semiconductor device | |
JP5378693B2 (en) | Semiconductor device | |
US9252119B1 (en) | Ball grid array including redistribution layer, packaged integrated circuit including the same, and methods of making and using the same | |
JP2000332193A (en) | Multi-chip semiconductor device | |
JPH0529538A (en) | Semiconductor module structure | |
JPS58184735A (en) | Integrated circuit chip | |
JP2002009235A (en) | Semiconductor device and its manufacturing method, connector for connecting semiconductor device to substrate and method for connecting semiconductor device to substrate |