JPH05160333A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPH05160333A
JPH05160333A JP3321608A JP32160891A JPH05160333A JP H05160333 A JPH05160333 A JP H05160333A JP 3321608 A JP3321608 A JP 3321608A JP 32160891 A JP32160891 A JP 32160891A JP H05160333 A JPH05160333 A JP H05160333A
Authority
JP
Japan
Prior art keywords
power supply
semiconductor chip
integrated circuit
power source
package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3321608A
Other languages
Japanese (ja)
Inventor
Daisuke Azuma
大祐 東
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP3321608A priority Critical patent/JPH05160333A/en
Publication of JPH05160333A publication Critical patent/JPH05160333A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05553Shape in top view being rectangular
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601Structure
    • H01L2224/0603Bonding areas having different sizes, e.g. different heights or widths
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061Disposition
    • H01L2224/0612Layout
    • H01L2224/06179Corner adaptations, i.e. disposition of the bonding areas at the corners of the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49177Combinations of different arrangements
    • H01L2224/49179Corner adaptations, i.e. disposition of the wire connectors at the corners of the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To supply a stable power source to an integrated circuit without affecting a chip area of the integrated circuit, by electrically connecting a semiconductor chip having a terminal for power source on a corner part with a package having an inner lead part for power source on the position corresponding to the corner part. CONSTITUTION:A layout of a power source pattern 11a necessary to be enhanced is located on a corner part of a semiconductor chip 11, and bonding pads 12a for power source terminal are provided. Then, both the bonding pads 12a for power source and an inner lead part 13a for power source which is located on the position of die pad 13 corresponding to the corner part are bonded with wires 16a. Therefore, a power source can be stably supplied to the power pattern 11a of the semiconductor chip 11 through the wires 16a and the bonding pads 12a for power source.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体集積回路装置に関
するものであり、特にIC(集積回路)、LSI(大規
模集積回路)半導体チップを、パッケ−ジに封入して構
成した半導体集積回路装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit device, and more particularly to a semiconductor integrated circuit device having an IC (integrated circuit) or LSI (large scale integrated circuit) semiconductor chip enclosed in a package. It is about.

【0002】[0002]

【従来の技術】一般に、この種の半導体集積回路装置に
於いては、半導体チップ上に各種電源用の端子が多数形
成されている。このため、パッケージの端子数も増加さ
せ、かかる電源関係に多くの端子を割り当てることによ
り、これらの電源用端子をパッケ−ジ内部で電気的接続
可能ならしめると共に半導体チップへの電源供給能力を
確保するようにしている。
2. Description of the Related Art Generally, in this type of semiconductor integrated circuit device, a large number of terminals for various power sources are formed on a semiconductor chip. Therefore, by increasing the number of terminals in the package and allocating a large number of terminals for such power supply relationship, these power supply terminals can be electrically connected inside the package and the power supply capability to the semiconductor chip is secured. I am trying to do it.

【0003】図5に、このような従来の半導体集積回路
装置の一例を示す。
FIG. 5 shows an example of such a conventional semiconductor integrated circuit device.

【0004】図5の半導体集積回路装置において、電源
供給の能力及び安定性を高めるためには、半導体チップ
51の電源(VCC,VDD,VSS,GND等)端子た
る電源用ボンディングパッドを含むボンディングパッド
52の配列個数を増加させ、且つパッケージ側の端子たる
インナリ−ド55も同様に増加させ各々をワイヤ56で相互
に電気的接続(インナリ−ドボンディング)し、半導体
チップ51及びパッケージの電源用の端子を増やすように
している。
In the semiconductor integrated circuit device of FIG. 5, in order to improve the power supply capability and stability, the semiconductor chip
Bonding pads including power supply bonding pads that are terminals for 51 power supplies (VCC, VDD, VSS, GND, etc.)
The number of arrays of 52 is increased, and the number of inner terminals 55, which are terminals on the package side, is also increased, and each is electrically connected (inner bonding) to each other by wires 56. I try to increase the number of terminals.

【0005】[0005]

【発明が解決しようとする課題】一般に、この種の半導
体集積回路装置においては、装置の高集積化、高機能化
及び製造工程の簡略化などの見地から、限りある端子を
有効に活用し、パッケージの端子数を増加させることな
く、且つチップ面積を増加させないことが望まれてい
る。また、高速で且つ出力電流及び消費電流が大きい半
導体集積回路においても、パッケージが同一の端子数で
あっても、電源(例えばVCC,VDD,VSS,GN
D等)の供給能力を増加させ、高速動作における電源ノ
イズや同時スイッチングノイズに対しても安定した電源
供給を行い、誤動作を押えることが望まれている。
Generally, in this type of semiconductor integrated circuit device, from the viewpoint of high integration, high functionality and simplification of manufacturing process of the device, limited terminals are effectively utilized, It is desired to increase the number of terminals of the package and not increase the chip area. In addition, even in a semiconductor integrated circuit that operates at high speed and has a large output current and a large current consumption, even if the packages have the same number of terminals, power supplies (for example, VCC, VDD, VSS, GN)
It is desired to increase the supply capacity of (D etc.) and to supply a stable power supply to the power supply noise and the simultaneous switching noise in the high speed operation to suppress the malfunction.

【0006】しかしながら、前述した従来の半導体集積
回路装置によれば、端子数が増加するにつれ各種パッケ
ージのフレームパターンやスクリーン印刷、蒸着等のパ
ターンの微細化や多層配線技術が要求され、コスト面で
問題となる。また、各種パッケージの配線パターンの増
加と微細化により、特に半導体チップのコーナ部分での
ワイヤボンディングも困難になる。更に、各種パターン
を微細化することにより電源(VCC,VDD,VS
S,GND等)及び通常の入力、出力、入出力等の信号
線のインピーダンス、インダクタンスや線間のカップリ
ング等によるノイズの影響も問題となる。
However, according to the above-mentioned conventional semiconductor integrated circuit device, as the number of terminals increases, the miniaturization of the frame patterns of various packages, screen printing, patterns such as vapor deposition, and multilayer wiring technology are required, and in terms of cost. It becomes a problem. Further, due to the increase and miniaturization of the wiring patterns of various packages, it becomes difficult to wire bond particularly at the corners of the semiconductor chip. Furthermore, by miniaturizing various patterns, power supplies (VCC, VDD, VS
(S, GND, etc.) and the influence of noise due to impedance of signal lines such as normal input, output, and input / output, inductance, coupling between lines, etc. are also problems.

【0007】即ち、このような従来の半導体集積回路装
置によれば、電源供給能力を強化するための電源端子の
数に比例して半導体チップの面積、パッケージの端子数
の増加、また各種パッケージにおいてもリードフレーム
や蒸着、多層配線等のパターン配線も増加しコストも増
加する。また半導体チップ上の端子及びパッケージの配
線パターンの増加に比例しワイヤボンディングそのもの
が困難になる。更に、パッケージのフレームやパターン
の配線量が増加すると、配線パターンの高度な微細化技
術も必要になり、逆に十分な電源供給能力が得られない
場合が生じたり、他の信号線にまでインピーダンスやイ
ンダクタンスの影響を及ぼしかねない。
That is, according to such a conventional semiconductor integrated circuit device, the area of the semiconductor chip, the number of terminals of the package are increased in proportion to the number of power supply terminals for enhancing the power supply capability, and in various packages. In addition, the number of lead frames, vapor deposition, and pattern wiring such as multi-layer wiring also increases, and the cost also increases. Also, the wire bonding itself becomes difficult in proportion to the increase in the wiring pattern of the terminals on the semiconductor chip and the package. Furthermore, as the amount of wiring in the package frame or pattern increases, sophisticated wiring pattern miniaturization technology is also required, which may result in insufficient power supply capability or impedance to other signal lines. And inductance may affect it.

【0008】本発明は上述した従来の問題点に鑑み成さ
れたものであり、製造コストの上昇を極力押さえつつ、
動作の信頼性、安定性が高い半導体集積回路装置を提供
することを課題とする。
The present invention has been made in view of the above-mentioned conventional problems, and suppresses an increase in manufacturing cost as much as possible.
An object of the present invention is to provide a semiconductor integrated circuit device with high reliability and stability of operation.

【0009】[0009]

【課題を解決するための手段】本発明の半導体集積回路
装置は上述の課題を達成すべく、コ−ナ部分に電源用端
子を有する半導体チップから構成された半導体集積回路
と、該半導体集積回路が封入され半導体チップのコーナ
部分に対応する位置に電源用インナリ−ド部分を有する
パッケ−ジと、電源用端子と電源用インナリ−ド部分と
を電気的接続する接続手段とを備えたことを特徴とす
る。
In order to achieve the above-mentioned object, a semiconductor integrated circuit device of the present invention includes a semiconductor integrated circuit composed of a semiconductor chip having a power supply terminal at a corner, and the semiconductor integrated circuit. A package having a power supply inner lead portion at a position corresponding to the corner portion of the semiconductor chip and a connecting means for electrically connecting the power supply terminal and the power supply inner lead portion. Characterize.

【0010】[0010]

【作用】本発明の半導体集積回路装置によれば、半導体
集積回路は、例えばボンディングパッドなどの電源用端
子をコ−ナ部分に有する半導体チップから構成されてお
り、他方、該半導体集積回路が封入されるパッケ−ジ
は、半導体チップのコーナ部分に対応する位置に電源用
インナリ−ド部分を有する。そして、例えばワイヤボン
ディング用のワイヤである接続手段により、これらの電
源用端子と電源用インナリ−ド部分とを電気的接続する
ようにしたので、同一のパッケージで同一の端子数にお
いても、半導体チップに十分な電源供給を与えることが
でき、パッケージの端子数の増加や複雑で微細なパッケ
ージのフレームやパターン、及び高度なワイヤボンディ
ング技術等を必要としない。また集積回路のチップ面積
にも影響を及ぼすことなく、特に電源関係の信号以外の
信号にも悪影響を及ぼすこともない。この結果、製造コ
ストの増加を最小限に止めつつ、高速動作を必要とする
集積回路においても、極力安定した電源を供給すること
ができるようになり、従って、装置動作の信頼性及び安
定性が向上する。
According to the semiconductor integrated circuit device of the present invention, the semiconductor integrated circuit is composed of a semiconductor chip having a power supply terminal such as a bonding pad in the corner portion, while the semiconductor integrated circuit is enclosed. The package has a power supply inner lead portion at a position corresponding to the corner portion of the semiconductor chip. Since the power supply terminals and the power supply inner lead portions are electrically connected to each other by the connecting means, which is a wire for wire bonding, for example, even if the same package has the same number of terminals, the semiconductor chip It is possible to provide a sufficient power supply to the package, and it is not necessary to increase the number of terminals of the package, a complicated and fine package frame or pattern, and an advanced wire bonding technique. Further, it does not affect the chip area of the integrated circuit, and does not adversely affect signals other than power-related signals. As a result, it is possible to supply a stable power as much as possible even in an integrated circuit that requires high-speed operation while suppressing an increase in manufacturing cost to a minimum, and therefore, the reliability and stability of device operation are improved. improves.

【0011】次に示す本発明の実施例から、本発明のこ
のような作用がより明らかにされ、更に本発明の他の作
用が明らかにされよう。
The action of the present invention will be more apparent from the following examples of the present invention, and other actions of the present invention will be further clarified.

【0012】[0012]

【実施例】以下図面を用いて本発明の実施例を詳細に説
明する。
Embodiments of the present invention will be described in detail below with reference to the drawings.

【0013】図1は本発明の一実施例である半導体集積
回路装置における半導体チップをワイヤボンディングし
た場合のレイアウトの概略図である。
FIG. 1 is a schematic view of a layout when a semiconductor chip is wire-bonded in a semiconductor integrated circuit device according to an embodiment of the present invention.

【0014】図1において、半導体集積回路装置は、半
導体集積回路を構成しており上面にボンディングパッド
12が配列形成されている半導体チップ11、パッケ−ジの
基板14上に設けられており半導体チップ11がダイボンド
されているダイパッド13、基板14上に設けられておりイ
ンナリ−ド部分15a を含んで構成された配線パタ−ン1
5、及びこれらのインナリ−ド部分15a とボンディング
パッド12とを電気的接続(ワイヤボンディング)するワ
イヤ16を備えている。尚、ボンディングパッド12は、信
号入出力端子を構成している。
In FIG. 1, the semiconductor integrated circuit device constitutes a semiconductor integrated circuit and has a bonding pad on the upper surface.
A semiconductor chip 11 in which 12 are formed in an array, a die pad 13 provided on a package substrate 14 to which the semiconductor chip 11 is die-bonded, and an inner lead portion 15a provided on the substrate 14 are included. Configured wiring pattern 1
5, and a wire 16 for electrically connecting (wire bonding) the inner lead portion 15a and the bonding pad 12 to each other. The bonding pad 12 constitutes a signal input / output terminal.

【0015】本実施例では、前述した電源供給にかかる
問題点を極力押えるように、チップのVCC,VDD,
VSS,GND等の電源(以下同様に電源とは、これら
VCC,VDD,VSS,GND等を示す。)の端子数
を増加させても、パッケージの端子数を増加させること
なく、半導体チップ11への電源の供給能力を向上させる
べく、半導体チップ11のコ−ナ部分及びこのコ−ナ部分
に対応するパッケージ部分に、以下に説明する種々の工
夫を施している。
In the present embodiment, the VCC, VDD, and
Even if the number of terminals of power supplies such as VSS and GND (hereinafter, the power supply also refers to VCC, VDD, VSS, GND, etc.) is increased, the number of terminals of the package is not increased and the semiconductor chip 11 is connected to the semiconductor chip 11. In order to improve the power supply capability of the semiconductor chip 11, the corner portion of the semiconductor chip 11 and the package portion corresponding to this corner portion have various measures described below.

【0016】即ち、通常の半導体集積回路では、半導体
チップ上の周辺に入力、出力、或は入出力等のバッファ
が配置され、特に半導体チップのコーナ部分は、トラン
ジスタをはじめ集積回路を構成するための各素子、また
各種電源や信号線も配置配線されない空きの領域(死に
領域)となっているが、本実施例では先ず、この空き領
域たる半導体チップ11のコ−ナ部分に、強化すべき必要
な電源パタ−ン11a のレイアウトを配置すると共に、電
源用端子の一例としての電源用ボンディングパッド12a
を設けている。そして、ダイパッド13のこのコ−ナ部分
に対応した位置を電源用インナリ−ド部分13a として、
これら電源用ボンディングパッド12a と電源用インナリ
−ド部分13a とを接続手段の一例であるワイヤ16a によ
りワイヤボンディングするように構成されている。即
ち、電源をワイヤ16a 及び電源用ボンディングパッド12
a を介して、半導体チップ11の電源パタ−ン11a に供給
することができる。
That is, in a normal semiconductor integrated circuit, buffers for input, output, input / output, etc. are arranged on the periphery of a semiconductor chip, and in particular, a corner portion of the semiconductor chip constitutes an integrated circuit including a transistor. Each element, and also various power sources and signal lines are vacant areas (dead areas) in which the wiring is not arranged. In the present embodiment, first, the corners of the semiconductor chip 11, which are the vacant areas, should be strengthened. The layout of the required power supply pattern 11a is arranged, and the power supply bonding pad 12a as an example of the power supply terminal is arranged.
Is provided. And the position corresponding to this corner portion of the die pad 13 is defined as the power supply inner lead portion 13a,
The power source bonding pad 12a and the power source inner lead portion 13a are configured to be wire-bonded by a wire 16a which is an example of a connecting means. That is, the power source is the wire 16a and the power source bonding pad 12
It can be supplied to the power supply pattern 11a of the semiconductor chip 11 via a.

【0017】ここで特に、本実施例では、半導体チップ
11の基板電位をとるためのダイパッド(アイランド)13
と電源(例えばGND)を共通にすることにより、安定
した半導体チップ11へのバックバイアス及び電源が供給
でき、更に基板14上の電源のパターンを通常の信号線に
比べ幅を広くし、より安定した電源供給ができるように
構成されている。
Here, in particular, in this embodiment, the semiconductor chip
Die pad (island) for taking 11 substrate potential 13
And a power source (for example, GND) are commonly used, a stable back bias and power source can be supplied to the semiconductor chip 11, and the power source pattern on the substrate 14 is wider than that of a normal signal line to be more stable. It is configured to be able to supply power.

【0018】このように、電源供給を強化するための電
源用ボンディングパッド12a を半導体チップ11のコーナ
部分に配置し、空き領域を活用することにより、特に半
導体チップ11の面積の増加も発生しない。更にパッケー
ジのコーナ部分に電源用配線パターンを設けることによ
り、従来のパッケージの様にコーナ部分での高度なワイ
ヤボンディング技術を必要とせず、コーナ部分以外の通
常の配線部分においてもワイヤボンディングやパッケー
ジのパターン形成に余裕を持たせることができ、パッケ
ージングの信頼性も確保できるので極めて有利である。
Thus, by arranging the power supply bonding pad 12a for strengthening the power supply in the corner portion of the semiconductor chip 11 and utilizing the vacant area, the area of the semiconductor chip 11 is not particularly increased. Furthermore, by providing a power supply wiring pattern at the corners of the package, there is no need for advanced wire bonding technology at the corners unlike the conventional package, and wire bonding and package This is extremely advantageous because it allows a margin for pattern formation and ensures the reliability of packaging.

【0019】必要な電源端子数が少数の場合は、従来例
のような対応も可能ではあるが、図1に示す実施例のよ
うに半導体チップ及びパッケージのコーナ部分でのみ電
源端子をとることでも可能である。また、もともと端子
数が多い多ピンのチップ、パッケージにおいては、電源
強化のために半導体チップ、パッケージの任意の辺上に
ある電源端子以外にコーナ部分に新たに電源端子を増設
することもできる。また、電源強化の必要がない場合で
あっても、任意の辺上にある電源パタ−ンをコーナ部分
に配置することによりピン数を減少させ、電源による他
の信号への悪影響を防止することも可能である。
When the number of power supply terminals required is small, the conventional method can be applied, but it is also possible to provide the power supply terminals only at the corners of the semiconductor chip and the package as in the embodiment shown in FIG. It is possible. In addition, in the case of a multi-pin chip or package having a large number of terminals, a power supply terminal can be newly added to a corner portion in addition to a semiconductor chip or a power supply terminal on an arbitrary side of the package in order to strengthen the power supply. Even when it is not necessary to strengthen the power supply, the power supply pattern on any side can be placed in the corner to reduce the number of pins and prevent the power supply from adversely affecting other signals. Is also possible.

【0020】以上説明したように、第1実施例によれ
ば、半導体チップ11上の端子数の増加に拘らず、パッケ
ージの端子数を増加させることなく、パッケージの信号
配線の幅やピッチ等の微細加工技術や新たな多層配線層
や配線技術を特に必要とせず、また半導体チップ11のコ
ーナ部分での高度なワイヤボンディング技術も用いるこ
となく、更には信号線間のインピーダンス、インダクタ
ンス、カップリング等のノイズの影響を極力受けずに、
十分な電源供給を実現することができる。
As described above, according to the first embodiment, the width, pitch, etc. of the signal wiring of the package can be increased without increasing the number of terminals of the package regardless of the number of terminals on the semiconductor chip 11. It does not require fine processing technology, new multilayer wiring layer or wiring technology, and does not use advanced wire bonding technology at the corners of the semiconductor chip 11, and further, impedance between signal lines, inductance, coupling, etc. Without being affected by the noise of
Sufficient power supply can be realized.

【0021】次に図2を参照して、本発明の第2実施例
について説明する。尚、本第2実施例は、強化すべき電
源電位が半導体チップの基板電位とは共通にしない場
合、若しくは基板電位とは別系統の電源に対応した場合
の実施例である。
Next, a second embodiment of the present invention will be described with reference to FIG. The second embodiment is an embodiment in which the power supply potential to be strengthened is not the same as the substrate potential of the semiconductor chip, or is compatible with a power supply of a system different from the substrate potential.

【0022】図2において、半導体集積回路装置は、信
号の入出力端子を構成するボンディングパッド22、電源
パタ−ン21a 及び電源用ボンディングパッド22a が上面
に配列形成されている半導体チップ21、パッケ−ジの基
板24上に設けられており半導体チップ21がダイボンドさ
れているダイパッド23、電源用インナリ−ド部分25aを
含んで構成された配線パタ−ン25、並びにこれらの電源
用インナリ−ド部分25a と電源用ボンディングパッド22
a とを電気的接続するワイヤ26a を備えている。即ち、
本第2実施例は、半導体チップ及びパッケージのコーナ
部分を利用している点については第1実施例の場合と同
様である。但し、本第2実施例では、ダイパッド23上の
パターンは、電源用ボンディングパッド22a に電気的接
続されておらず、代わりに、電源用ボンディングパッド
22a は、かかるコ−ナ部分に設けられたインナリ−ド部
分25aに、ワイヤ26a により接続されている。この結
果、本第2実施例においてもパッケージの端子数を極力
増加させることなく、また微細加工技術や新たな多層配
線技術更には高度なボンディング技術を必要とせず、安
定した電源供給を実現することができる。
In FIG. 2, the semiconductor integrated circuit device includes a semiconductor chip 21 having a bonding pad 22 constituting a signal input / output terminal, a power supply pattern 21a, and a power supply bonding pad 22a arranged on the upper surface, and a package. Die pad 23 provided on the substrate 24 of the semiconductor chip 21 to which the semiconductor chip 21 is die-bonded, a wiring pattern 25 including an inner power source inner portion 25a, and an inner power source inner portion 25a. And power supply bonding pad 22
It has a wire 26a for electrically connecting with a. That is,
The second embodiment is similar to the first embodiment in that the semiconductor chip and the corner portion of the package are used. However, in the second embodiment, the pattern on the die pad 23 is not electrically connected to the power supply bonding pad 22a, and instead, the power supply bonding pad 22a is used.
22a is connected to an inner lead portion 25a provided on the corner portion by a wire 26a. As a result, in the second embodiment as well, it is possible to realize stable power supply without increasing the number of terminals of the package as much as possible, and without requiring fine processing technology, new multilayer wiring technology, or advanced bonding technology. You can

【0023】次に図3を参照して、本発明の第3実施例
について説明する。
Next, a third embodiment of the present invention will be described with reference to FIG.

【0024】図3において、半導体集積回路装置は、電
源パタ−ン31a 及び電源用ボンディングパッド32a が上
面に配列形成されている半導体チップ31、パッケ−ジの
基板34上に設けられており半導体チップ31がダイボンド
されていると共に電源用インナリ−ド部分33a を含むダ
イパッド33、電源用インナリ−ド部分35a を含んで構成
された配線パタ−ン35、及びこれらの電源用インナリ−
ド部分33a 及び35a と電源用ボンディングパッド32a と
を電気的接続するワイヤ36a を備えている。即ち、本第
3実施例は、第1実施例のように基板電位と同電位の電
源を共通にし電源強化を図るとともに、第2実施例のよ
うに他の別電源とのボンディングも可能にした実施例で
ある。従って、本第3実施例においても、第1及び第2
実施例と同様に、パッケージの端子数を極力増加させる
ことなく、また微細加工技術や新たな多層配線技術更に
は高度なボンディング技術を必要とせず、安定した電源
供給を実現することができる。
In FIG. 3, the semiconductor integrated circuit device is provided on a semiconductor chip 31 on which a power source pattern 31a and power source bonding pads 32a are arrayed and formed, and on a package substrate 34. 31 is die-bonded, and includes a die pad 33 including an inner power source portion 33a, a wiring pattern 35 including an inner power source portion 35a, and these inner power source portions.
Wires 36a for electrically connecting the power supply bonding pads 32a to the power supply bonding pads 32a. That is, in the third embodiment, the power source having the same potential as the substrate potential is commonly used as in the first embodiment to strengthen the power source, and the bonding with another power source as in the second embodiment is also possible. This is an example. Therefore, also in the third embodiment, the first and second
Similar to the embodiment, it is possible to realize stable power supply without increasing the number of terminals of the package as much as possible, and without requiring fine processing technology, new multilayer wiring technology, or advanced bonding technology.

【0025】次に図4を参照して、本発明の第4実施例
について説明する。尚、本第4実施例は、第1〜第3実
施例の場合と同様にチップのコーナ部分を活用した構成
に加えて、それ以外にパッケージ側での配線パターンに
工夫を施したものである。
Next, a fourth embodiment of the present invention will be described with reference to FIG. The fourth embodiment is similar to the first to third embodiments in that the corner portion of the chip is utilized, and in addition to that, the wiring pattern on the package side is devised. ..

【0026】図4において、半導体集積回路装置は、電
源用ボンディングパッド42a 及び信号入出力用のボンデ
ィングパッド42が上面に配列形成されている半導体チッ
プ41、パッケ−ジの基板44上に設けられており半導体チ
ップ41がダイボンドされていると共に電源用インナリ−
ド部分43a を含むダイパッド43、電源用インナリ−ド部
分45a を含んで構成された配線パタ−ン45、並びにこれ
らの電源用インナリ−ド部分43a 及び45a と電源用ボン
ディングパッド42a とを電気的接続するワイヤ46a を備
えている。即ち、本第4実施例は、基板バイアスと共通
の電源については、半導体チップ41上の任意の位置から
ダイパッド43にボンディングができるようにダイパッド
43の露出面積をやや広げ、別電源については、ダイパッ
ド43の各辺に平行に延長することにより、こちらも半導
体チップ41上の任意の位置にある電源用ボンディングパ
ッド42a からワイヤ46a によるボンディングを可能に
し、電源供給能力を更に向上させた場合の実施例であ
る。
In FIG. 4, the semiconductor integrated circuit device is provided on a semiconductor chip 41 having a bonding pad 42a for power supply and bonding pads 42 for signal input / output arranged on the upper surface thereof, and a substrate 44 of a package. The semiconductor chip 41 is die-bonded and the power supply inner
The die pad 43 including the power source inner portion 43a, the wiring pattern 45 including the power source inner portion 45a, and the power source inner layer portions 43a and 45a and the power source bonding pad 42a are electrically connected. It has a wire 46a for That is, in the fourth embodiment, the power source common to the substrate bias is such that the die pad 43 can be bonded from any position on the semiconductor chip 41.
By slightly expanding the exposed area of 43 and extending parallel to each side of the die pad 43 for another power supply, it is also possible to bond with the power supply bonding pad 42a at any position on the semiconductor chip 41 by the wire 46a. In this embodiment, the power supply capacity is further improved.

【0027】以上図1〜図4に示した実施例によれば、
半導体チップ上のコーナ部分である空き領域を活用し且
つこのコーナ部分に対応するパッケージ部分に電源のパ
ターンを形成し、若しくは、半導体チップの基板バイア
ス用の電源及びその周囲に他の電源のパターンを配置
し、半導体チップのボンディングパッドよりワイヤによ
り直接そのダイパッドパターン及び他の別電源用パター
ンに必要数だけボンディングすることにより、半導体チ
ップ上の端子数の増加に拘らず、パッケージの端子数を
増加させることなく、またパッケージの信号線配線のピ
ッチ等特殊な微細技術や多層配線技術を特に必要とせ
ず、更には信号線間のインピーダンス、インダクタン
ス、カップリング等のノイズの影響を極力受けずに、十
分な電源供給を実現することができる。
According to the embodiment shown in FIGS. 1 to 4,
Utilizing an empty area which is a corner portion on the semiconductor chip and forming a power source pattern on the package portion corresponding to this corner portion, or forming a power source for the substrate bias of the semiconductor chip and another power source pattern around it. The number of terminals of the package is increased regardless of an increase in the number of terminals on the semiconductor chip by arranging and bonding the necessary number of wires directly to the die pad pattern and other power source patterns from the bonding pads of the semiconductor chip by wires. In addition, it does not require special fine technology such as the pitch of the signal line wiring of the package or multi-layer wiring technology, and is not affected by noise such as impedance between signal lines, inductance and coupling as much as possible. It is possible to realize various power supplies.

【0028】尚、以上の如き本実施例のパッケ−ジとし
ては、プラスチック(モ−ルド)型パッケ−ジ、セラミ
ック型(サ−ディップ、サ−クオド等)パッケ−ジ、プ
リント基板型パッケ−ジ、TCP(テ−プキャリアパッ
ケ−ジ)、COG(チップオンガラス),COB(チッ
プオンボ−ド)型のパッケ−ジ等を用いることができ、
また、ボンディング方式としては、上述のワイヤボンデ
ィング方式の他に、TAB(テ−プオ−トメイテッドボ
ンディング)、フリップチップボンディング等のワイヤ
レスボンディング方式を採ることもできる。
The package of this embodiment as described above includes a plastic (mold) type package, a ceramic type (sardip, sark, etc.) package, and a printed circuit board type package. , TCP (tape carrier package), COG (chip on glass), COB (chip on board) type packages, etc. can be used.
As the bonding method, in addition to the wire bonding method described above, a wireless bonding method such as TAB (tape automated mating) or flip chip bonding can be adopted.

【0029】[0029]

【発明の効果】以上詳細に説明したように本発明によれ
ば、コ−ナ部分に電源用端子を有する半導体チップから
構成された半導体集積回路と、半導体チップのコーナ部
分に対応する位置に電源用インナリ−ド部分を有するパ
ッケ−ジと、電源用端子と電源用インナリ−ド部分とを
電気的接続する接続手段とを備えたので、同一のパッケ
ージで同一の端子数においても、半導体チップに十分な
電源供給を与えることができ、パッケージの端子数の増
加や複雑で微細なパッケージのフレームやパターン、及
び高度なワイヤボンディング技術等を必要としない。ま
た集積回路のチップ面積にも影響を及ぼすことなく、特
に従来技術により電源端子を増加させ電源供給を強化で
き、電源関係の信号以外の信号にも悪影響を及ぼすこと
もない。従って、高速動作を必要とする集積回路におい
ても、極力安定した電源を供給することができるように
なる。
As described in detail above, according to the present invention, a semiconductor integrated circuit composed of a semiconductor chip having a power supply terminal at a corner portion and a power supply at a position corresponding to a corner portion of the semiconductor chip. Since it has a package having an inner inner portion and a connecting means for electrically connecting the power source terminal and the power inner portion, it is possible to form a semiconductor chip with the same number of terminals in the same package. Sufficient power supply can be provided, and an increase in the number of package terminals, a complicated and fine package frame or pattern, and an advanced wire bonding technique are not required. In addition, the chip area of the integrated circuit is not affected, and the power supply can be increased by increasing the number of power supply terminals by the conventional technique, and signals other than power supply related signals are not adversely affected. Therefore, even in an integrated circuit that requires high-speed operation, it is possible to supply a stable power supply as much as possible.

【0030】このように製造コストの増加を最小限に止
めつつ、高速動作を必要とする集積回路においても極力
安定した電源を供給することができるようになり、従っ
て、装置動作の信頼性及び安定性が極めて向上する。
As described above, it becomes possible to supply a stable power as much as possible even in an integrated circuit requiring a high-speed operation while suppressing an increase in manufacturing cost to a minimum, and therefore, reliability and stability of operation of the device. The property is extremely improved.

【0031】以上の結果本発明により、製造コストの低
減、高集積化、高機能化の要請に沿っており、しかも信
頼性が高く高速動作可能な半導体集積回路装置を提供す
ることができる。
As a result of the above, according to the present invention, it is possible to provide a semiconductor integrated circuit device which meets the demands for manufacturing cost reduction, high integration, and high functionality, and which is highly reliable and can operate at high speed.

【図面の簡単な説明】[Brief description of drawings]

【図1】図1は、本発明の第1実施例の半導体集積回路
装置における半導体チップのコーナ部分及びこのコーナ
部分に対応するパッケージ部分にかかる配線状態を示す
部分拡大平面図である。
FIG. 1 is a partially enlarged plan view showing a wiring state of a corner portion of a semiconductor chip and a package portion corresponding to the corner portion in a semiconductor integrated circuit device according to a first embodiment of the present invention.

【図2】図2は、本発明の第2実施例の半導体集積回路
装置における半導体チップのコーナ部分及びこのコーナ
部分に対応するパッケージ部分にかかる配線状態を示す
部分拡大平面図である。
FIG. 2 is a partially enlarged plan view showing a wiring state of a corner portion of a semiconductor chip and a package portion corresponding to the corner portion in a semiconductor integrated circuit device according to a second embodiment of the present invention.

【図3】図3は、本発明の第3実施例の半導体集積回路
装置における半導体チップのコーナ部分及びこのコーナ
部分に対応するパッケージ部分にかかる配線状態を示す
部分拡大平面図である。
FIG. 3 is a partially enlarged plan view showing a wiring state of a corner portion of a semiconductor chip and a package portion corresponding to the corner portion in a semiconductor integrated circuit device according to a third embodiment of the present invention.

【図4】図4は、本発明の第4実施例の半導体集積回路
装置における半導体チップ及びパッケージにかかる配線
状態を示す部分平面図である。
FIG. 4 is a partial plan view showing a wiring state of a semiconductor chip and a package in a semiconductor integrated circuit device according to a fourth embodiment of the present invention.

【図5】図5は、従来の半導体集積回路装置における半
導体チップ及びパッケージにかかる配線状態を示す部分
平面図である。
FIG. 5 is a partial plan view showing a wiring state of a semiconductor chip and a package in a conventional semiconductor integrated circuit device.

【符号の説明】[Explanation of symbols]

11、21、31、41 半導体チップ 12a 、22a 、32a 、42a 電源用ボンディングパッド 13a 、25a 、33a 、35a 、43a 、45a 電源用インナリ
−ド部分 16a 、26a 、36a 、46a ワイヤ
11, 21, 31, 41 Semiconductor chip 12a, 22a, 32a, 42a Power supply bonding pad 13a, 25a, 33a, 35a, 43a, 45a Power supply inner portion 16a, 26a, 36a, 46a Wire

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 コ−ナ部分に電源用端子を有する半導体
チップから構成された半導体集積回路と、該半導体集積
回路が封入され前記半導体チップのコーナ部分に対応す
る位置に電源用インナリ−ド部分を有するパッケ−ジ
と、前記電源用端子と前記電源用インナリ−ド部分とを
電気的接続する接続手段とを備えたことを特徴とする半
導体集積回路装置。
1. A semiconductor integrated circuit comprising a semiconductor chip having a power supply terminal at a corner portion, and a power supply inner lead portion at a position where the semiconductor integrated circuit is enclosed and corresponds to a corner portion of the semiconductor chip. And a connecting means for electrically connecting the power supply terminal and the power supply inner lead portion.
【請求項2】 前記半導体チップがダイボンドされたダ
イパッドを備えており、該ダイパッドの前記半導体チッ
プのコ−ナ部分に対応する部分が、前記電源用インナリ
−ド部分の一部として前記電源用端子に電気的接続され
ていることを特徴とする請求項1記載の半導体集積回路
装置。
2. The semiconductor chip comprises a die pad die-bonded thereto, and a portion of the die pad corresponding to a corner portion of the semiconductor chip is the power supply terminal as a part of the power supply inner lead portion. 2. The semiconductor integrated circuit device according to claim 1, which is electrically connected to.
【請求項3】 前記接続手段は前記電源用端子と前記電
源用インナリ−ド部分とをワイヤボンディングするワイ
ヤから構成されていることを特徴とする請求項1又は2
記載の半導体集積回路装置。
3. The connection means comprises a wire for wire-bonding the power supply terminal and the power supply inner lead portion.
The semiconductor integrated circuit device described.
JP3321608A 1991-12-05 1991-12-05 Semiconductor integrated circuit device Pending JPH05160333A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3321608A JPH05160333A (en) 1991-12-05 1991-12-05 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3321608A JPH05160333A (en) 1991-12-05 1991-12-05 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPH05160333A true JPH05160333A (en) 1993-06-25

Family

ID=18134430

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3321608A Pending JPH05160333A (en) 1991-12-05 1991-12-05 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPH05160333A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0620593A1 (en) * 1993-04-16 1994-10-19 Kabushiki Kaisha Toshiba Semiconductor device with smaller package
US5592020A (en) * 1993-04-16 1997-01-07 Kabushiki Kaisha Toshiba Semiconductor device with smaller package having leads with alternating offset projections
US7538441B2 (en) 2004-02-24 2009-05-26 Canon Kabushiki Kaisha Chip with power and signal pads connected to power and signal lines on substrate
KR20130108145A (en) 2012-03-23 2013-10-02 세이코 인스트루 가부시키가이샤 Semiconductor integrated circuit device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0620593A1 (en) * 1993-04-16 1994-10-19 Kabushiki Kaisha Toshiba Semiconductor device with smaller package
US5592020A (en) * 1993-04-16 1997-01-07 Kabushiki Kaisha Toshiba Semiconductor device with smaller package having leads with alternating offset projections
US5801433A (en) * 1993-04-16 1998-09-01 Kabushiki Kaisha Toshiba Semiconductor device with smaller package
US7538441B2 (en) 2004-02-24 2009-05-26 Canon Kabushiki Kaisha Chip with power and signal pads connected to power and signal lines on substrate
KR20130108145A (en) 2012-03-23 2013-10-02 세이코 인스트루 가부시키가이샤 Semiconductor integrated circuit device
US9136145B2 (en) 2012-03-23 2015-09-15 Seiko Instruments Inc. Semiconductor integrated circuit device

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