JPH11186427A - Package for housing semiconductor element - Google Patents

Package for housing semiconductor element

Info

Publication number
JPH11186427A
JPH11186427A JP35650997A JP35650997A JPH11186427A JP H11186427 A JPH11186427 A JP H11186427A JP 35650997 A JP35650997 A JP 35650997A JP 35650997 A JP35650997 A JP 35650997A JP H11186427 A JPH11186427 A JP H11186427A
Authority
JP
Japan
Prior art keywords
side wall
coaxial connector
semiconductor element
hole
sealing material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP35650997A
Other languages
Japanese (ja)
Other versions
JP3455100B2 (en
Inventor
Yosuke Okitsu
陽介 興津
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP35650997A priority Critical patent/JP3455100B2/en
Publication of JPH11186427A publication Critical patent/JPH11186427A/en
Application granted granted Critical
Publication of JP3455100B2 publication Critical patent/JP3455100B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Abstract

PROBLEM TO BE SOLVED: To provide a package for housing a semiconductor element in which any reflection or attenuation can not be generated in a high frequency signal propagating through a co-axial connector and a co-axial cable, and the high frequency signal can be efficiently propagated even when the inner diameter of the outer peripheral conductor of the outside coaxial cable connected with the coaxial connector is larger than the outer diameter of the outer peripheral conductor of the coaxial connector. SOLUTION: A frame-shaped wide wall 2 is erected at the upper outer peripheral part of a button plate 1 having a loading part 1a of a semiconductor element 5 on the upper face so that the loading part 1a can be surrounded, and a coaxial connector 3 is inserted and fixed into a through-hole 2a provided at the side wall 2 so that the height of the edge part can be almost the same as that of the outer face of the side wall 2, and a cover body 4 is joined to the upper face of the frame-shaped side wall 2 in this package for housing a semiconductor element. The through-hole 2a is provided with a sealing member inserting part 2b whose diameter is made wider like a stepped shape or a taper shape according it goes toward the outside face at the outside face side of the side wall 2, and a metallic member 10 forming a continuous face whose height is almost the same as that of the edge part of the coaxial connector 3 and the outer face of the side wall 2 is mounted in the sealing member inserting part 2b. Thus, the reflection or attenuation of a high frequency signal in the sealing member inserting part 2b can not be generated, and the high frequency signal can be efficiently propagated.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体素子を収容
するための半導体素子収納用パッケージに関するもので
ある。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device housing package for housing a semiconductor device.

【0002】[0002]

【従来の技術】従来、半導体素子、特に高周波で作動す
る半導体素子を収容するための半導体素子収納用パッケ
ージは、一般に鉄−ニッケル−コバルト合金や銅−タン
グステン合金等の金属から成り、上面中央部に半導体素
子が搭載される搭載部を有する底板と、この底板の上面
外周部に搭載部を囲繞するようにして立設され、その一
部に貫通孔を有する枠状の側壁と、この側壁の貫通孔内
に挿入されるとともに側壁の内外を気密に仕切るように
して接合され、かつ側壁の内外に導出するメタライズ配
線層を有するセラミック端子と、側壁の上面に接合され
る、底板の上面と側壁の内面とで囲まれる空間を気密に
封止するための金属製蓋体とから構成されている。
2. Description of the Related Art Conventionally, a semiconductor device housing package for housing a semiconductor device, particularly a semiconductor device operating at a high frequency, is generally made of a metal such as an iron-nickel-cobalt alloy or a copper-tungsten alloy, and has a central portion on the upper surface. A bottom plate having a mounting portion on which a semiconductor element is mounted, a frame-shaped side wall having a through hole in a part of the bottom plate and being erected around the upper surface of the bottom plate so as to surround the mounting portion; A ceramic terminal having a metallized wiring layer that is inserted into the through hole and is joined so as to hermetically separate the inside and outside of the side wall and that extends to the inside and outside of the side wall, and the top surface and the side wall of the bottom plate that are joined to the top surface of the side wall And a metal lid for hermetically sealing a space surrounded by the inner surface of the cover.

【0003】この従来の半導体素子収納用パッケージ
は、底板の搭載部に半導体素子を、この半導体素子の各
電極と電気的に接続された配線導体を有するセラミック
製の回路基板に実装された状態で搭載固定するとともに
回路基板の配線導体とセラミック端子のメタライズ配線
層とをボンディングワイヤを介して電気的に接続し、し
かる後、側壁の上面に金属製蓋体をろう付け法やシーム
ウエルド法等の溶接法を採用して接合し、底板・側壁・
セラミック端子および蓋体から成る容器内部に半導体素
子を気密に封止することによって製品としての半導体装
置となる。
In this conventional package for housing a semiconductor element, a semiconductor element is mounted on a mounting portion of a bottom plate on a ceramic circuit board having wiring conductors electrically connected to respective electrodes of the semiconductor element. While mounting and fixing, the wiring conductor of the circuit board and the metallized wiring layer of the ceramic terminal are electrically connected via bonding wires, and then a metal lid is brazed on the upper surface of the side wall by a method such as brazing or seam welding. Welding method is adopted, and bottom plate, side wall,
A semiconductor device as a product is obtained by hermetically sealing a semiconductor element inside a container including a ceramic terminal and a lid.

【0004】この半導体装置は、半導体素子収納用パッ
ケージの側壁の外側に導出したセラミック端子のメタラ
イズ配線層を外部電気回路基板の配線導体に例えば金属
リボンを介して電気的に接続することによって、内部に
収容する半導体素子が外部電気回路に電気的に接続され
ることとなる。
In this semiconductor device, a metallized wiring layer of a ceramic terminal led out of a side wall of a package for accommodating a semiconductor element is electrically connected to a wiring conductor of an external electric circuit board via a metal ribbon, for example. Is electrically connected to an external electric circuit.

【0005】しかしながら近時、半導体素子の作動周波
数の更なる高周波化に伴い、半導体素子が電気的に接続
される外部電気回路基板は、その配線導体として、連続
して一定の特性インピーダンスが得られ、かつ外部から
の電磁シールド性に優れた同軸ケーブルが用いられるよ
うになってきている。
In recent years, however, as the operating frequency of the semiconductor device has been further increased, the external electric circuit board to which the semiconductor device is electrically connected has been continuously provided with a constant characteristic impedance as its wiring conductor. In addition, coaxial cables having excellent electromagnetic shielding properties from the outside have been used.

【0006】この同軸ケーブルは、信号が伝播される中
心導体と、この中心導体の周りに誘電体部材を挟んで配
置され、中心導体に流れる信号と対応した信号が流れる
外周導体とから構成されている。
This coaxial cable is composed of a central conductor through which a signal is propagated, and an outer conductor through which a signal corresponding to the signal flowing through the central conductor is arranged around the central conductor with a dielectric member interposed therebetween. I have.

【0007】そこで、このような高周波作動の半導体素
子を収容する半導体素子収納用パッケージにおいても、
外部電気回路基板の配線導体である同軸ケーブルと半導
体素子との電気的接続を容易なものとするために、外部
電気回路基板の配線導体と電気的に接続される端子とし
て従来のセラミック端子に代えて同軸コネクターを備え
たものが提案されている。
Therefore, a semiconductor device housing package for housing such a high-frequency operated semiconductor device also has a problem.
In order to facilitate the electrical connection between the coaxial cable, which is the wiring conductor of the external electric circuit board, and the semiconductor element, a conventional ceramic terminal is used as a terminal electrically connected to the wiring conductor of the external electric circuit board. The one provided with a coaxial connector has been proposed.

【0008】この同軸コネクターを備えた半導体素子収
納用パッケージの例を図5に断面図で示す。同図中、11
は底板、12は側壁、13は同軸コネクター、14は蓋体、15
は半導体素子、16はセラミック製の回路基板である。
FIG. 5 is a cross-sectional view of an example of a semiconductor device housing package provided with the coaxial connector. In the figure, 11
Is the bottom plate, 12 is the side wall, 13 is the coaxial connector, 14 is the lid, 15
Denotes a semiconductor element, and 16 denotes a ceramic circuit board.

【0009】この同軸コネクターを備えた半導体素子収
納用パッケージは、底板11の上面中央部に設けられた搭
載部11aに半導体素子15が、この半導体素子15の電極と
ボンディングワイヤ17を介して電気的に接続された配線
導体16aを有する回路基板16に実装された状態で搭載固
定される。
In the package for accommodating a semiconductor element having this coaxial connector, a semiconductor element 15 is electrically connected to an electrode of the semiconductor element 15 via a bonding wire 17 on a mounting portion 11a provided at the center of the upper surface of the bottom plate 11. Is mounted and fixed in a state of being mounted on a circuit board 16 having a wiring conductor 16a connected to the wiring board 16a.

【0010】また、この同軸コネクターを備えた半導体
素子収納用パッケージは、側壁12の一部に同軸コネクタ
ー13が挿入固定される貫通孔12aが形成されており、こ
の貫通孔12a内には同軸コネクター13が挿入されるとと
もに同軸コネクター13と貫通孔12aの内壁とが半田等の
封着材18を介して接合されている。
In the package for accommodating a semiconductor device provided with the coaxial connector, a through hole 12a into which the coaxial connector 13 is inserted and fixed is formed in a part of the side wall 12, and the coaxial connector is provided in the through hole 12a. 13 is inserted, and the coaxial connector 13 and the inner wall of the through hole 12a are joined via a sealing material 18 such as solder.

【0011】同軸コネクター13は、鉄−ニッケル−コバ
ルト合金等の金属から成る円筒状の外周導体13aの中心
部に同じく鉄−ニッケル−コバルト合金等の金属から成
る棒状の中心導体13bがガラス部材13cを介して固定さ
れて成り、外周導体13aが封着材18を介して側壁12に電
気的に接続されており、また中心導体13bが半田を介し
て回路基板16の配線導体16aに電気的に接続される。
The coaxial connector 13 has a cylindrical central conductor 13b made of a metal such as an iron-nickel-cobalt alloy and a rod-shaped central conductor 13b also made of a metal such as an iron-nickel-cobalt alloy. The outer conductor 13a is electrically connected to the side wall 12 via the sealing material 18, and the center conductor 13b is electrically connected to the wiring conductor 16a of the circuit board 16 via solder. Connected.

【0012】この同軸コネクターを備えた半導体素子収
納用パッケージは、同軸コネクター13を外部電気回路基
板の配線導体である同軸ケーブル19に接続することによ
って、内部に収容する半導体素子15が外部電気回路に電
気的に接続されることとなる。
In the package for accommodating a semiconductor element having this coaxial connector, the coaxial connector 13 is connected to a coaxial cable 19 which is a wiring conductor of an external electric circuit board, so that the semiconductor element 15 housed inside is connected to an external electric circuit. It will be electrically connected.

【0013】なお、側壁12には、その上面から貫通孔12
aに至る封着材挿入孔12bが形成されており、貫通孔12
a内に同軸コネクター13を挿入するとともに封着材挿入
孔12bに半田等の封着材18を挿入し、しかる後、これを
加熱して半田等の封着材18を溶融させ、溶融した封着材
18を毛管現象により同軸コネクター13と貫通孔12aの内
壁との隙間に充填させることによって、同軸コネクター
13が側壁部12の貫通孔12a内に半田等の封着材18を介し
て固定される。
The side wall 12 has a through hole 12 from its upper surface.
a into which a sealing material insertion hole 12b is formed.
a, the sealing material 18 such as solder is inserted into the sealing material insertion hole 12b, and then heated to melt the sealing material 18 such as solder. Dressing
By filling the gap between the coaxial connector 13 and the inner wall of the through hole 12a by capillary action, the coaxial connector
13 is fixed in the through hole 12a of the side wall portion 12 via a sealing material 18 such as solder.

【0014】[0014]

【発明が解決しようとする課題】しかしながら、この従
来の半導体素子収納用パッケージは、封着材挿入孔12b
が側壁12の上面側のみに設けられており、そのため封着
材挿入孔12b内に挿入した半田等の封着材18が溶融した
際に、この溶融した封着材18が同軸コネクター13と貫通
孔12a内壁との隙間のうち封着材挿入孔12bと反対側の
隙間には十分に充填されず、その結果、側壁部12内外の
気密が十分に確保されないこととなり、内部に収容する
半導体素子15を長期間にわたり正常かつ安定に作動させ
ることができないという欠点を有していた。
However, this conventional package for housing a semiconductor element has a sealing material insertion hole 12b.
Is provided only on the upper surface side of the side wall 12, so that when the sealing material 18 such as solder inserted into the sealing material insertion hole 12b is melted, the melted sealing material 18 penetrates the coaxial connector 13. The gap between the inner wall of the hole 12a and the side opposite to the sealing material insertion hole 12b is not sufficiently filled, and as a result, the airtightness between the inside and the outside of the side wall portion 12 is not sufficiently ensured. 15 had a drawback that it could not operate normally and stably over a long period of time.

【0015】そこで、本願出願人は、特願平7−211750
号において、図6に要部拡大断面図で示すように、同軸
コネクター13を挿入固定するために側壁12に設けた貫通
孔12aの側壁12の外面側に、貫通孔12aの直径が側壁12
の外面に向けて例えば段状に広がる封着材挿入部12cを
設けた半導体素子収納用パッケージを提案した。この半
導体素子収納用パッケージによれば、側壁12に設けた貫
通孔12a内に同軸コネクター13を挿入するとともに封着
材挿入部12cに封着材18となるリング状の半田材を挿入
保持させ、しかる後、この半田材を加熱溶融させれば、
貫通孔12a内壁と同軸コネクター13との間の隙間が全周
にわたり封着材18により充填される。
Therefore, the applicant of the present application has filed Japanese Patent Application No. 7-211750.
6, the diameter of the through-hole 12a is formed on the outer surface side of the side wall 12 of the through-hole 12a provided in the side wall 12 for inserting and fixing the coaxial connector 13 as shown in FIG.
For example, a semiconductor device housing package provided with a sealing material insertion portion 12c extending stepwise toward the outer surface of the semiconductor device has been proposed. According to this semiconductor element housing package, the coaxial connector 13 is inserted into the through hole 12a provided in the side wall 12, and the ring-shaped solder material serving as the sealing material 18 is inserted and held in the sealing material insertion portion 12c. Then, if this solder material is heated and melted,
The gap between the inner wall of the through hole 12a and the coaxial connector 13 is filled with the sealing material 18 over the entire circumference.

【0016】しかしながら、この封着材挿入部12cを設
けた半導体素子収納用パッケージにおいては、側壁12に
設けた貫通孔12a内に同軸コネクター13を挿入するとと
もに封着材挿入部12cに封着材18となるリング状の半田
材を挿入保持させ、しかる後、この半田材を加熱溶融さ
せて同軸コネクター13を固定すると、封着材挿入部12c
に挿入したリング状の半田材は貫通孔12aの内壁と同軸
コネクター13との間の隙間に移動するため、側壁12の外
面側で同軸コネクター13の周囲に封着材挿入部12cが段
差として残ってしまう。
However, in the semiconductor device housing package provided with the sealing material insertion portion 12c, the coaxial connector 13 is inserted into the through hole 12a provided in the side wall 12, and the sealing material is inserted into the sealing material insertion portion 12c. Insert and hold the ring-shaped solder material to be 18, and then heat and melt this solder material to fix the coaxial connector 13.
The ring-shaped solder material inserted into the through hole 12a moves into the gap between the inner wall of the through hole 12a and the coaxial connector 13, so that the sealing material insertion portion 12c remains as a step around the coaxial connector 13 on the outer surface of the side wall 12. Would.

【0017】このように、側壁12の外面で同軸コネクタ
ー13の周囲に封着材挿入部12cによる段差があると、同
軸コネクター13に接続される外部の同軸ケーブル19の外
周導体19aの内径が同軸コネクター13の外周導体13aの
外径より大きな場合は、同軸コネクター13と外部の同軸
ケーブル19とを接続すると同軸ケーブル19の外周導体19
aの内周面が段差の部分に位置することになる。そし
て、このように接続された同軸ケーブル19と同軸コネク
ター13との間に高周波信号を伝播させると、高周波信号
はいわゆる表皮効果により同軸コネクター13および同軸
ケーブル19の中心導体13b・19bの表面とこれに対応す
る外周導体13a・19aの内周面近傍を流れようとする。
As described above, when there is a step due to the sealing material insertion portion 12c around the coaxial connector 13 on the outer surface of the side wall 12, the inner diameter of the outer conductor 19a of the external coaxial cable 19 connected to the coaxial connector 13 becomes coaxial. If the outer diameter of the outer conductor 13a of the connector 13 is larger than the outer diameter of the outer conductor 19a of the coaxial cable 19, the coaxial connector 13 is connected to the external coaxial cable 19.
The inner peripheral surface of “a” is located at the step. When a high-frequency signal is propagated between the coaxial cable 19 and the coaxial connector 13 connected in this manner, the high-frequency signal is caused by a so-called skin effect, and the surface of the central conductors 13b and 19b of the coaxial connector 13 and the coaxial cable 19 is Of the outer conductors 13a and 19a corresponding to the inner conductors.

【0018】ところが、同軸ケーブル19の外周導体19a
の内周面は側壁12の封着材挿入部12cによる段差の部分
に位置していることから、同軸コネクター13および同軸
ケーブル19の外周導体13a・19aに流れる信号は側壁12
の封着材挿入部12cによる段差を迂回して流れることと
なり、このため同軸コネクター13および同軸ケーブル19
の中心導体13b・19bを流れる信号とこれに対応して外
周導体13a・19aを流れる信号との間に位相差が発生し
てしまい、これに起因して信号の減衰や反射が起こるた
め、信号を効率よく伝播させることができないという欠
点を誘発する結果となっていた。
However, the outer conductor 19a of the coaxial cable 19
Of the coaxial connector 13 and the outer conductors 13a and 19a of the coaxial cable 19, the inner peripheral surface of the side wall 12 is located at the stepped portion due to the sealing material insertion portion 12c of the side wall 12.
Flows around the step formed by the sealing material insertion portion 12c, and the coaxial connector 13 and the coaxial cable 19
A phase difference is generated between the signal flowing through the center conductors 13b and 19b and the signal flowing through the outer conductors 13a and 19a, and the signal is attenuated or reflected. Has a disadvantage that it cannot be propagated efficiently.

【0019】本発明は上記欠点を解決すべく案出された
ものであり、その目的は、同軸コネクターに接続される
外部の同軸ケーブルの外周導体の内径が同軸コネクター
の外周導体の外径よりも大きな場合であっても同軸コネ
クターおよび同軸ケーブルを伝播する高周波信号に反射
や減衰が発生することがない、高周波信号を効率よく伝
播させることができる半導体素子収納用パッケージを提
供することにある。
The present invention has been made in order to solve the above-mentioned drawback, and an object of the present invention is to make the outer diameter of the outer conductor of the external coaxial cable connected to the coaxial connector larger than the outer diameter of the outer conductor of the coaxial connector. An object of the present invention is to provide a package for housing a semiconductor element capable of efficiently transmitting a high-frequency signal without causing reflection or attenuation of a high-frequency signal transmitted through a coaxial connector and a coaxial cable even in a large case.

【0020】[0020]

【課題を解決するための手段】本発明の半導体素子収納
用パッケージは、上面に半導体素子が搭載される搭載部
を有する底板の上面外周部に枠状の側壁が前記搭載部を
囲繞するようにして立設され、前記側壁に設けられた貫
通孔に同軸コネクターがその端部を前記側壁の外面と略
同じ高さとして挿入されるとともに前記貫通孔の内周面
に封着材を介して固定され、前記底板の上面と前記側壁
の内面とで囲まれる空間を気密に封止する蓋体が前記枠
状の側壁の上面に接合される半導体素子収納用パッケー
ジであって、前記貫通孔は前記側壁の外面側に外面に向
けて段状またはテーパー状に直径が広がる封着材挿入部
を有しており、かつこの封着材挿入部内に前記同軸コネ
クターの端部および前記側壁の外面と略同じ高さの連続
面を形成する金属部材が取着されていることを特徴とす
るものである。
According to a first aspect of the present invention, there is provided a package for storing a semiconductor element, wherein a frame-like side wall surrounds the mounting section on an outer peripheral portion of an upper surface of a bottom plate having a mounting section on which a semiconductor element is mounted. A coaxial connector is inserted into the through-hole provided in the side wall with its end substantially at the same height as the outer surface of the side wall, and is fixed to the inner peripheral surface of the through-hole via a sealing material. Wherein a lid for hermetically sealing a space enclosed by an upper surface of the bottom plate and an inner surface of the side wall is joined to an upper surface of the frame-shaped side wall, wherein the through hole is An outer surface side of the side wall has a sealing material insertion portion whose diameter increases stepwise or tapered toward the outer surface, and in this sealing material insertion portion, substantially the same as the end of the coaxial connector and the outer surface of the side wall. Metals forming continuous surfaces of the same height Wood is characterized in that it is attached.

【0021】本発明の半導体素子収納用パッケージによ
れば、側壁の外面に向けて段状またはテーパー状に広が
る封着材挿入部に、この封着材挿入部により形成される
側壁の外面と同軸コネクターの端部との間の段差を埋め
る金属部材が取着されていることから、同軸コネクター
に接続される外部の同軸ケーブルの外周導体の内径が同
軸コネクターの外周導体の外径よりも大きな場合であっ
ても、同軸コネクターおよび同軸ケーブルの外周導体の
内周面近傍を流れる高周波信号が側壁において封着部材
挿入部により形成される側壁の外面と同軸コネクターの
端部との間の段差を迂回して流れることはない。従っ
て、高周波信号に位相差が発生したり、それに起因して
信号の減衰や反射が起こったりすることがなく、高周波
信号を効率よく伝播させることができる。
According to the semiconductor element housing package of the present invention, the sealing material insertion portion which spreads stepwise or tapered toward the outer surface of the side wall is coaxial with the outer surface of the side wall formed by the sealing material insertion portion. When a metal member that fills the step between the connector end is attached, so the outer diameter of the outer conductor of the external coaxial cable connected to the coaxial connector is larger than the outer diameter of the outer conductor of the coaxial connector Even in this case, the high-frequency signal flowing near the inner peripheral surface of the outer conductor of the coaxial connector and the coaxial cable bypasses the step between the outer surface of the side wall formed by the sealing member insertion portion and the end of the coaxial connector on the side wall. It does not flow. Therefore, the high-frequency signal can be efficiently propagated without generating a phase difference in the high-frequency signal or causing the signal to be attenuated or reflected.

【0022】[0022]

【発明の実施の形態】以下、本発明の半導体素子収納用
パッケージを添付の図面に基づいて説明する。図1は本
発明の半導体素子収納用パッケージの実施の形態の一例
を示す断面図、図2はその要部拡大断面図であり、これ
らの図において1は底板、2は側壁、3は同軸コネクタ
ー、4は蓋体である。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view of a package for accommodating a semiconductor device according to the present invention. 1 is a sectional view showing an example of an embodiment of a package for housing a semiconductor element according to the present invention. FIG. 2 is an enlarged sectional view of a main part thereof. In these figures, 1 is a bottom plate, 2 is a side wall, and 3 is a coaxial connector. Reference numeral 4 denotes a lid.

【0023】底板1は鉄−ニッケル−コバルト合金や銅
−タングステン合金等の金属から成る略四角形状の板状
体であり、その上面中央部には、半導体素子を搭載する
ための搭載部1aが形成されており、搭載部1aには半
導体素子5が、例えばアルミナ質セラミックスから成る
回路基板6に実装された状態で搭載固定される。
The bottom plate 1 is a substantially rectangular plate made of a metal such as an iron-nickel-cobalt alloy or a copper-tungsten alloy, and a mounting portion 1a for mounting a semiconductor element is provided at the center of the upper surface. The semiconductor element 5 is mounted and fixed to the mounting portion 1a while being mounted on a circuit board 6 made of, for example, alumina ceramics.

【0024】なお、回路基板6に実装された半導体素子
5は、その電極が回路基板6に被着形成されているメタ
ライズ配線導体6aにボンディングワイヤ7等を介して
電気的に接続されている。
The electrodes of the semiconductor element 5 mounted on the circuit board 6 are electrically connected to metallized wiring conductors 6a formed on the circuit board 6 via bonding wires 7 and the like.

【0025】また、底板1の上面外周部には搭載部1a
を囲繞するようにして枠状の側壁2が立設されており、
側壁2は底板1とともにその内側に半導体素子5を収容
する空所を形成する。
A mounting portion 1a is provided on the outer peripheral portion of the upper surface of the bottom plate 1.
Frame-like side wall 2 is provided so as to surround the
The side wall 2 and the bottom plate 1 form a space for accommodating the semiconductor element 5 inside thereof.

【0026】側壁2は底板1と同様に鉄−ニッケル−コ
バルト合金や銅−タングステン合金等の金属から成り、
底板1と一体成形されることによって、あるいは底板1
に銀ろう等のろう材を介してろう付けされたり、シーム
溶接法等の溶接法により溶接されることによって底板1
の上面外周部に立設される。
The side wall 2 is made of a metal such as an iron-nickel-cobalt alloy or a copper-tungsten alloy like the bottom plate 1.
By being integrally formed with the bottom plate 1 or
The bottom plate 1 is brazed through a brazing material such as silver brazing or is welded by a welding method such as a seam welding method.
Is erected on the outer peripheral portion of the upper surface.

【0027】側壁2の一部には同軸コネクター3が挿入
固定される貫通孔2aが形成されており、貫通孔2a内
には同軸コネクター3がその端部を側壁2の外面と略同
じ高さとして挿入されるとともに同軸コネクター3と貫
通孔2aの内周面すなわち内壁とが半田から成る封着材
8を介して固定されている。
A through hole 2a into which the coaxial connector 3 is inserted and fixed is formed in a part of the side wall 2, and the end of the coaxial connector 3 has a height substantially equal to the outer surface of the side wall 2 in the through hole 2a. The coaxial connector 3 and the inner peripheral surface, that is, the inner wall of the through hole 2a are fixed via a sealing material 8 made of solder.

【0028】さらに、側壁2に形成された貫通孔2a
は、側壁2の外面側に直径が側壁2の外面に向けて全周
にわたり段状に広がった封着材挿入部2bを有してい
る。
Further, a through hole 2a formed in the side wall 2 is provided.
Has a sealing material insertion portion 2 b on the outer surface side of the side wall 2, the diameter of which expands stepwise over the entire circumference toward the outer surface of the side wall 2.

【0029】この封着材挿入部2bは貫通孔2a内に同
軸コネクター3を封着材8を介して挿入固定する際に貫
通孔2a内壁と同軸コネクター3とを固定するための封
着材8となるリング状の半田材を保持する作用をなす。
The sealing material inserting portion 2b is used to fix the inner wall of the through hole 2a and the coaxial connector 3 when the coaxial connector 3 is inserted and fixed into the through hole 2a via the sealing material 8. And holds the ring-shaped solder material.

【0030】側壁2に形成された貫通孔2aは、その直
径が側壁2の外面に向けて全周にわたり段状に広がった
封着材挿入部2bを有していることから、貫通孔2a内
に同軸コネクター3を挿入するとともにこの封着材挿入
部2b内に貫通孔2aの内周面と同軸コネクター3とを
接合するための封着材8となるリング状の半田材を挿入
保持させてこの半田材を加熱溶融させれば、貫通孔2a
の内周面と同軸コネクター3との間の隙間が全周にわた
り封着材8により充填されることとなる。
The through hole 2a formed in the side wall 2 has a sealing material insertion portion 2b whose diameter is stepwise spread over the entire circumference toward the outer surface of the side wall 2, so that the through hole 2a is formed in the through hole 2a. And a ring-shaped solder material serving as a sealing material 8 for joining the inner peripheral surface of the through hole 2a and the coaxial connector 3 is inserted and held in the sealing material insertion portion 2b. When this solder material is heated and melted, the through holes 2a are formed.
Of the coaxial connector 3 is filled with the sealing material 8 over the entire circumference.

【0031】側壁2の貫通孔2a内に挿入固定される同
軸コネクター3は内部に収容する半導体素子5を外部の
同軸ケーブル9に電気的に接続するものであり、鉄−ニ
ッケル−コバルト合金等の金属から成る円筒状の外周導
体3aの中心部に同じく鉄−ニッケル−コバルト合金等
の金属から成る中心導体3bが封着ガラス部材3cを介
して固定された構造をしている。
The coaxial connector 3 inserted and fixed in the through hole 2a of the side wall 2 electrically connects the semiconductor element 5 housed therein to an external coaxial cable 9, and is made of an iron-nickel-cobalt alloy or the like. A central conductor 3b also made of a metal such as an iron-nickel-cobalt alloy is fixed at the center of a cylindrical outer conductor 3a made of a metal via a sealing glass member 3c.

【0032】同軸コネクター3は、外周導体3aが側壁
2に封着材8を介して、また中心導体3bが回路基板6
の配線導体6aに半田等の導電性接着剤を介してそれぞ
れ電気的に接続されている。
In the coaxial connector 3, the outer conductor 3a is provided on the side wall 2 via the sealing material 8, and the center conductor 3b is provided on the circuit board 6
Are electrically connected to the wiring conductors 6a via a conductive adhesive such as solder.

【0033】また、側壁2の貫通孔2aの封着材挿入部
2bには、同軸コネクターの端部および前記側壁の外面
と略同じ高さの連続面を形成する鉄−ニッケル−コバル
ト合金等の金属材料からなるリング状の金属部材10が、
封着材挿入部2bにより形成される側壁2の外面と同軸
コネクター3の端部との間の段差を埋めるように封着材
8を介して取着されている。
The sealing material insertion portion 2b of the through hole 2a of the side wall 2 is made of an iron-nickel-cobalt alloy or the like which forms a continuous surface having substantially the same height as the end of the coaxial connector and the outer surface of the side wall. A ring-shaped metal member 10 made of a metal material,
It is attached via a sealing material 8 so as to fill a step between the outer surface of the side wall 2 formed by the sealing material insertion portion 2b and the end of the coaxial connector 3.

【0034】本発明の半導体素子収納用パッケージによ
れば、このように封着材挿入部2bに側壁2の外面と同
軸コネクター3の端部との間の段差を埋めるリング状の
金属部材10が取着されていることから、側壁2において
同軸コネクター3の端部の周囲に段差が形成されること
はない。従って、同軸コネクター3に接続される外部の
同軸ケーブル9の外周導体9aの内径が同軸コネクター
3の外周導体3aの外径よりも大きな場合であっても、
同軸コネクター3および同軸ケーブル9の外周導体3a
・9aの内周面近傍を流れる高周波信号が封着部材挿入
部2bにより形成される段差を迂回して流れることはな
いので、同軸コネクター3と同軸ケーブル9との間に高
周波信号を効率よく伝播させることができる。
According to the semiconductor element housing package of the present invention, the ring-shaped metal member 10 for filling the step between the outer surface of the side wall 2 and the end of the coaxial connector 3 in the sealing material insertion portion 2b as described above. Since it is attached, no step is formed around the end of the coaxial connector 3 on the side wall 2. Therefore, even when the inner diameter of the outer conductor 9a of the external coaxial cable 9 connected to the coaxial connector 3 is larger than the outer diameter of the outer conductor 3a of the coaxial connector 3,
Coaxial connector 3 and outer conductor 3a of coaxial cable 9
Since the high-frequency signal flowing near the inner peripheral surface of 9a does not flow around the step formed by the sealing member insertion portion 2b, the high-frequency signal is efficiently propagated between the coaxial connector 3 and the coaxial cable 9. Can be done.

【0035】なお、同軸コネクター3を側壁2の貫通孔
2a内に封着材8を介して固定するには、図3(a)に
示すように側壁2の貫通孔2a内に同軸コネクター3を
その端部が前記側壁の外面と略同じ高さとなるように挿
入するとともに、貫通孔2aの封着材挿入部2bに封着
材8となる例えばリング状の半田材Aおよびリング状の
金属部材10をコネクター3の端部を取り囲むようにして
挿入し、しかる後、半田材Aを一旦加熱溶融させてから
冷却固化させる方法が採用される。その結果、図3
(b)に示すように溶融したリング状の半田材Aは貫通
孔2aの内周面と同軸コネクター3の外周面との間の隙
間の全周にわたり充填されて封着材8となり、これによ
り側壁2の内外の気密が損なわれることは一切ないもの
となる。
In order to fix the coaxial connector 3 in the through hole 2a of the side wall 2 via the sealing material 8, the coaxial connector 3 is fixed in the through hole 2a of the side wall 2 as shown in FIG. For example, a ring-shaped solder material A and a ring-shaped metal member serving as a sealing material 8 are inserted into the sealing material insertion portion 2b of the through hole 2a so that the ends thereof are substantially the same height as the outer surface of the side wall. A method of inserting the connector 10 so as to surround the end of the connector 3 and then heating and melting the solder material A once and then cooling and solidifying the solder material A is adopted. As a result, FIG.
As shown in (b), the molten ring-shaped solder material A is filled over the entire circumference of the gap between the inner peripheral surface of the through hole 2a and the outer peripheral surface of the coaxial connector 3 to become the sealing material 8, thereby forming a sealing material 8. The airtightness between the inside and the outside of the side wall 2 is not impaired at all.

【0036】かくして本発明の半導体素子収納用パッケ
ージによれば、底板1の搭載部1aに半導体素子5をこ
の半導体素子5の電極と電気的に接続された配線導体6
aを有する回路基板6に実装した状態で搭載固定し、し
かる後、回路基板6の配線導体6aと同軸コネクター3
の中心導体3bとを半田を介して電気的に接続し、しか
る後、側壁2の上面に鉄−ニッケル−コバルト合金等の
金属から成る蓋体を半田付け法やシームウエルド法によ
り接合することにより製品としての半導体装置となり、
同軸コネクター3と外部の同軸ケーブル9とを接続する
ことにより内部に収容する半導体素子5が外部電気回路
に電気的に接続されることとなる。
Thus, according to the semiconductor element storage package of the present invention, the semiconductor element 5 is mounted on the mounting portion 1a of the bottom plate 1 by the wiring conductor 6 electrically connected to the electrode of the semiconductor element 5.
a, and mounted and fixed in a state of being mounted on the circuit board 6 having a.
Is electrically connected to the center conductor 3b via solder, and then a lid made of a metal such as an iron-nickel-cobalt alloy is joined to the upper surface of the side wall 2 by soldering or seam welding. Semiconductor device as a product,
By connecting the coaxial connector 3 to the external coaxial cable 9, the semiconductor element 5 housed inside is electrically connected to an external electric circuit.

【0037】なお、本発明は上述の実施の形態の例に限
定されるものではなく、本発明の要旨を逸脱しない範囲
であれば種々の変更は可能である。例えば、上述の実施
の形態の例では側壁2に形成された貫通孔2aに段状の
封着材挿入部2bを設けたが、これを図4に図2と同様
の断面図で示すようにテーパー状の封着材挿入部として
もよい。
The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention. For example, in the example of the above-described embodiment, the step-like sealing material insertion portion 2b is provided in the through hole 2a formed in the side wall 2, as shown in FIG. 4 as a sectional view similar to FIG. It may be a tapered sealing material insertion portion.

【0038】[0038]

【発明の効果】本発明の半導体素子収納用パッケージに
よれば、側壁の貫通孔に設けた側壁の外面に向けて段状
またはテーパー状に広がる封着材挿入部に、この封着材
挿入部により形成される側壁の外面と同軸コネクターの
端部との間の段差を埋めるように、同軸コネクターの端
部および側壁の外面と略同じ高さの連続面を形成する金
属部材が取着されていることから、同軸コネクターに接
続される外部の同軸ケーブルの外周導体の内径が同軸コ
ネクターの外周導体の外径よりも大きな場合であって
も、同軸コネクターおよび同軸ケーブルの外周導体の内
周面近傍を流れる高周波信号が封着部材挿入部により形
成される段差を迂回して流れることはない。
According to the semiconductor device housing package of the present invention, the sealing material insertion portion is provided in the sealing material insertion portion which spreads in a stepped or tapered shape toward the outer surface of the side wall provided in the through hole of the side wall. A metal member forming a continuous surface having substantially the same height as the end of the coaxial connector and the outer surface of the side wall is attached so as to fill a step between the outer surface of the side wall and the end of the coaxial connector. Therefore, even when the inner diameter of the outer conductor of the external coaxial cable connected to the coaxial connector is larger than the outer diameter of the outer conductor of the coaxial connector, the vicinity of the inner peripheral surface of the outer conductor of the coaxial connector and the coaxial cable Does not flow around the step formed by the sealing member insertion portion.

【0039】従って、同軸コネクターおよび同軸ケーブ
ルを伝播する高周波信号に反射や減衰が発生することは
なく、高周波信号を効率よく伝播させることができる。
Therefore, the high-frequency signal propagating through the coaxial connector and the coaxial cable is not reflected or attenuated, and the high-frequency signal can be efficiently propagated.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の半導体素子収納用パッケージの実施の
形態の一例を示す断面図である。
FIG. 1 is a cross-sectional view showing an example of an embodiment of a semiconductor element storage package according to the present invention.

【図2】図1に示す半導体素子収納用パッケージの要部
拡大断面図である。
2 is an enlarged cross-sectional view of a main part of the package for housing a semiconductor element shown in FIG. 1;

【図3】(a)および(b)はそれぞれ図1に示す半導
体素子収納用パッケージの側壁に設けた貫通孔内に同軸
コネクターを封着材を介して挿入固定する方法を説明す
るための断面図である。
FIGS. 3A and 3B are cross-sectional views for explaining a method of inserting and fixing a coaxial connector through a sealing material into a through hole provided in a side wall of the semiconductor device housing package shown in FIG. 1; FIG.

【図4】本発明の実施の形態の他の例を示す要部拡大断
面図である。
FIG. 4 is an enlarged sectional view of a main part showing another example of the embodiment of the present invention.

【図5】従来の半導体素子収納用パッケージの断面図で
ある。
FIG. 5 is a cross-sectional view of a conventional semiconductor element storage package.

【図6】従来の半導体素子収納用パッケージの要部拡大
断面図である。
FIG. 6 is an enlarged sectional view of a main part of a conventional package for housing a semiconductor element.

【符号の説明】[Explanation of symbols]

1・・・・・底板 1a・・・・搭載部 2・・・・・側壁 2a・・・・貫通孔 2b・・・・封着材挿入部 3・・・・・同軸コネクター 4・・・・・蓋体 5・・・・・半導体素子 8・・・・・封着材 10・・・・・金属部材 1 Bottom plate 1a Mounting part 2 Side wall 2a Through hole 2b Sealing material insertion part 3 Coaxial connector 4 ..Lid 5 ... Semiconductor element 8 ..Sealant 10 ... Metal member

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 上面に半導体素子が搭載される搭載部を
有する底板の上面外周部に枠状の側壁が前記搭載部を囲
繞するようにして立設され、前記側壁に設けられた貫通
孔に同軸コネクターがその端部を前記側壁の外面と略同
じ高さとして挿入されるとともに前記貫通孔の内周面に
封着材を介して固定され、前記底板の上面と前記側壁の
内面とで囲まれる空間を気密に封止する蓋体が前記枠状
の側壁の上面に接合される半導体素子収納用パッケージ
であって、前記貫通孔は前記側壁の外面側に外面に向け
て段状またはテーパー状に直径が広がる封着材挿入部を
有しており、かつ該封着材挿入部内に前記同軸コネクタ
ーの端部および前記側壁の外面と略同じ高さの連続面を
形成する金属部材が取着されていることを特徴とする半
導体素子収納用パッケージ。
1. A frame-like side wall is erected on an outer peripheral portion of an upper surface of a bottom plate having a mounting portion on which a semiconductor element is mounted on the upper surface so as to surround the mounting portion, and a through hole provided in the side wall is formed. A coaxial connector is inserted with its end at substantially the same height as the outer surface of the side wall, and is fixed to the inner peripheral surface of the through hole via a sealing material, and is surrounded by the upper surface of the bottom plate and the inner surface of the side wall. A lid for hermetically sealing a space to be sealed, which is joined to the upper surface of the frame-shaped side wall, wherein the through-hole is stepped or tapered toward the outer surface on the outer surface side of the side wall. A metal member forming a continuous surface having substantially the same height as the end of the coaxial connector and the outer surface of the side wall is attached to the sealing material insertion portion. Semiconductor device storage package cage.
JP35650997A 1997-12-25 1997-12-25 Package for storing semiconductor elements Expired - Fee Related JP3455100B2 (en)

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JP35650997A JP3455100B2 (en) 1997-12-25 1997-12-25 Package for storing semiconductor elements

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Application Number Priority Date Filing Date Title
JP35650997A JP3455100B2 (en) 1997-12-25 1997-12-25 Package for storing semiconductor elements

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JPH11186427A true JPH11186427A (en) 1999-07-09
JP3455100B2 JP3455100B2 (en) 2003-10-06

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001237482A (en) * 2000-02-22 2001-08-31 Kyocera Corp Package for housing optical semiconductor element
JP2002185068A (en) * 2000-12-11 2002-06-28 Kyocera Corp Package for containing semiconductor element
KR100480784B1 (en) * 2002-01-19 2005-04-06 삼성전자주식회사 Manufacturing Method of SMD type Package using Coaxial Cable
JP2011003589A (en) * 2009-06-16 2011-01-06 Kyocera Corp Package for housing electronic component, and electronic device
JP2012134350A (en) * 2010-12-22 2012-07-12 Kyocera Corp Semiconductor device package structure
JP2014167995A (en) * 2013-02-28 2014-09-11 Kyocera Corp Electronic component storing package and electronic device using the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5084706B2 (en) * 2007-12-03 2012-11-28 日本電気株式会社 COAXIAL CONNECTOR CONNECTION STRUCTURE, HIGH FREQUENCY DEVICE PROVIDED WITH SAME STRUCTURE AND COAXIAL CONNECTOR CONNECTION STRUCTURE

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001237482A (en) * 2000-02-22 2001-08-31 Kyocera Corp Package for housing optical semiconductor element
JP2002185068A (en) * 2000-12-11 2002-06-28 Kyocera Corp Package for containing semiconductor element
JP4658313B2 (en) * 2000-12-11 2011-03-23 京セラ株式会社 Package for storing semiconductor elements
KR100480784B1 (en) * 2002-01-19 2005-04-06 삼성전자주식회사 Manufacturing Method of SMD type Package using Coaxial Cable
US7025845B2 (en) 2002-01-19 2006-04-11 Samsung Electronics Co., Ltd. Surface mounted device type package using coaxial cable
JP2011003589A (en) * 2009-06-16 2011-01-06 Kyocera Corp Package for housing electronic component, and electronic device
JP2012134350A (en) * 2010-12-22 2012-07-12 Kyocera Corp Semiconductor device package structure
JP2014167995A (en) * 2013-02-28 2014-09-11 Kyocera Corp Electronic component storing package and electronic device using the same

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