JP2001237482A - Package for housing optical semiconductor element - Google Patents

Package for housing optical semiconductor element

Info

Publication number
JP2001237482A
JP2001237482A JP2000044763A JP2000044763A JP2001237482A JP 2001237482 A JP2001237482 A JP 2001237482A JP 2000044763 A JP2000044763 A JP 2000044763A JP 2000044763 A JP2000044763 A JP 2000044763A JP 2001237482 A JP2001237482 A JP 2001237482A
Authority
JP
Japan
Prior art keywords
coaxial connector
side wall
sealing material
hole
optical semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000044763A
Other languages
Japanese (ja)
Inventor
Mitsuo Yanagisawa
美津夫 柳沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2000044763A priority Critical patent/JP2001237482A/en
Publication of JP2001237482A publication Critical patent/JP2001237482A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Landscapes

  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)

Abstract

PROBLEM TO BE SOLVED: To allow no gap between a coaxial connector provided in a through- hole on the sidewall of an optical package and a coaxial cable connected to the coaxial connector from outside, so that the problem of poor connection with the outer-peripheral conductor of the coaxial cable is dissolved for reduced transmission loss of high-frequency signal, resulting in smooth propagation. SOLUTION: A sealing material insertion 2b, whose diameter expands toward the outside surface of a sidewall 2, is provided to the outside surface of the sidewall 2 of a through-hole 2a. A conductive elastic member 10 is so provided in the sealing material insertion 2b, as to be almost flush with the outside surface of the sidewall 2 and the end of a coaxial connector 3.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明が属する技術分野】本発明は、LD(半導体レー
ザ)、PD(フォトダイオード)等の光半導体素子を収
納するための光半導体素子収納用パッケージに関するも
のである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device housing package for housing an optical semiconductor device such as an LD (semiconductor laser) and a PD (photodiode).

【0002】[0002]

【従来の技術】従来のLD、PD等の光半導体素子を収
納する光半導体素子収納用パッケージ(以下、光パッケ
ージという)を図6に示す。同図に示すように、光パッ
ケージは、鉄(Fe)−ニッケル(Ni)−コバルト
(Co)合金(コバール)や銅(Cu)−タングステン
(W)合金等の金属から成り、上面の中央部に光半導体
素子24が搭載される搭載部21aを有し金属等から成
る基体21と、搭載部21aを囲むようにして基体21
上の周縁部に銀ロウ等のロウ材を介して接合され、Fe
−Ni−Co合金等の金属等から成る枠体22とから主
に構成される。
2. Description of the Related Art FIG. 6 shows a conventional optical semiconductor device housing package (hereinafter referred to as an optical package) for housing optical semiconductor devices such as LDs and PDs. As shown in the figure, the optical package is made of a metal such as an iron (Fe) -nickel (Ni) -cobalt (Co) alloy (Kovar) or a copper (Cu) -tungsten (W) alloy. And a base 21 made of metal or the like having a mounting portion 21a on which the optical semiconductor element 24 is mounted, and a base 21 surrounding the mounting portion 21a.
The upper peripheral part is joined via a brazing material such as silver brazing,
And a frame 22 made of a metal such as a Ni-Co alloy.

【0003】この枠体22は、その側部に形成された貫
通孔または切欠部に嵌着され、複数の外部接続用のリー
ド端子が設けられたアルミナ(Al23)セラミックス
等のセラミックスから成る入出力端子25と、他の側部
に形成された貫通孔22aに挿入接合され、内部に集光
用の透光性部材28aおよび光半導体素子24と外部と
の光信号の授受を行う光ファイバ29が固定されたFe
−Ni−Co合金等の金属から成る筒状の固定部材28
とが、取着される。また、枠体22の上面には、光半導
体素子24を気密に封止するFe−Ni−Co合金等か
ら成る蓋体31が、Fe−Ni−Co合金等から成るシ
ールリング32を介してシーム溶接等により接合され
る。
The frame body 22 is formed of a ceramic such as alumina (Al 2 O 3 ) ceramic which is fitted in a through hole or a notch formed in a side portion thereof and provided with a plurality of lead terminals for external connection. The input / output terminal 25 is inserted into the through-hole 22a formed on the other side, and is connected to the light-transmitting member 28a for condensing light and the light for transmitting and receiving an optical signal between the optical semiconductor element 24 and the outside. Fe with the fiber 29 fixed
-A cylindrical fixing member 28 made of a metal such as a Ni-Co alloy
And are attached. A lid 31 made of an Fe-Ni-Co alloy or the like for hermetically sealing the optical semiconductor element 24 is provided on the upper surface of the frame 22 via a seal ring 32 made of an Fe-Ni-Co alloy or the like. Joined by welding or the like.

【0004】なお、23は、光半導体素子24を駆動時
に冷却するペルチェ素子等の電子冷却素子、30は、光
半導体素子24と入出力端子25とを接続するボンディ
ングワイヤである。
Reference numeral 23 denotes an electronic cooling element such as a Peltier element for cooling the optical semiconductor element 24 during driving, and reference numeral 30 denotes a bonding wire for connecting the optical semiconductor element 24 and the input / output terminal 25.

【0005】このような光パッケージにおいて、近年光
半導体素子24の作動周波数は、10〜40GHz程度
かそれ以上とさらに高周波化されてきており、光半導体
素子24が電気的に接続される外部電気回路基板は、そ
の配線導体として、連続して一定の特性インピーダンス
が得られかつ外部からの電磁波のシールド性(電磁遮蔽
性)に優れた同軸ケーブルが用いられるようになってき
ている。
In such an optical package, in recent years, the operating frequency of the optical semiconductor element 24 has been further increased to about 10 to 40 GHz or more, and an external electric circuit to which the optical semiconductor element 24 is electrically connected. As a wiring conductor of a substrate, a coaxial cable which can continuously obtain a constant characteristic impedance and is excellent in the shielding property (electromagnetic shielding property) of an external electromagnetic wave has been used.

【0006】そこで、上記光パッケージも、外部電気回
路基板の配線導体に用いられる同軸ケーブルとの電気的
接続を容易なものとするために、外部電気回路基板の配
線導体と電気的に接続される入出力端子25として、従
来のセラミックスからなるものに代えて同軸コネクタを
備えたものを、本出願人は提案している(従来例1:特
開平9−64219号公報参照)。
Therefore, the optical package is also electrically connected to the wiring conductor of the external electric circuit board in order to facilitate electrical connection with the coaxial cable used for the wiring conductor of the external electric circuit board. The present applicant has proposed an input / output terminal 25 having a coaxial connector instead of a conventional ceramic input / output terminal (conventional example 1: see Japanese Patent Application Laid-Open No. 9-64219).

【0007】この同軸コネクタを備えた半導体素子収納
用パッケージ(以下、半導体パッケージという)は、底
板の上面中央部に設けられた搭載部に、半導体素子が、
その電極とボンデインデワイヤを介して電気的に接続さ
れた配線導体が形成された回路基板上に、実装された状
態で搭載固定される。また、この同軸コネクタを備えた
半導体パッケージは、図7に示すように、側壁42の一
部に同軸コネクタ43が挿入固定される貫通孔42aが
形成されており、その貫通孔42a内には同軸コネクタ
43が挿入されるとともに、同紬コネクタ43と貫通孔
42aの内周面とが半田等の封着材41を介して接合さ
れている。
In a package for housing a semiconductor element having a coaxial connector (hereinafter referred to as a semiconductor package), a semiconductor element is mounted on a mounting portion provided at the center of the upper surface of a bottom plate.
It is mounted and fixed on a circuit board on which a wiring conductor electrically connected to the electrode via a bonding wire is formed. As shown in FIG. 7, the semiconductor package provided with the coaxial connector has a through hole 42a in which a coaxial connector 43 is inserted and fixed in a part of a side wall 42, and a coaxial hole is formed in the through hole 42a. The connector 43 is inserted, and the connector 43 and the inner peripheral surface of the through hole 42a are joined via a sealing material 41 such as solder.

【0008】更に、側壁42に形成された貫通孔42a
は、その直径が外面に向けて全周にわたり段状に広がっ
た封着材挿入部42bを有しており、その封着材挿入部
42bは、貫通孔42a内に同軸コネクタ43を封着材
41を介して挿入固定する際に、貫通孔42a内壁と同
軸コネクタ43とを固定するための封着材41となる半
田材を、貫通孔42a内壁と同軸コネクタ43との間の
隙間の全周に沿って保持させる。従って、この半田材を
加熱溶融させれば、貫通孔42a内壁と同軸コネクタ4
3との間の隙間の全周にわたり封着材41により充填さ
れ、側壁42aの内外が完全に気密に仕切られる。
Further, a through hole 42a formed in the side wall 42
Has a sealing material insertion portion 42b whose diameter is spread stepwise over the entire circumference toward the outer surface, and the sealing material insertion portion 42b inserts the coaxial connector 43 into the through hole 42a. At the time of insertion and fixing through the through hole 41, a solder material serving as a sealing material 41 for fixing the inner wall of the through hole 42 a and the coaxial connector 43 is applied to the entire circumference of the gap between the inner wall of the through hole 42 a and the coaxial connector 43. Hold along. Therefore, if the solder material is heated and melted, the inner wall of the through hole 42a and the coaxial connector 4
3 is filled with the sealing material 41 over the entire circumference of the gap, and the inside and outside of the side wall 42a are completely airtightly partitioned.

【0009】なお、同軸コネクタ43は、Fe−Ni−
Co合金等の金属から成る円筒状の外周導体44の中心
部に、同じくFe−Ni−Co合金等の金属からなる棒
状の中心導体46が、ガラス部材45を介して固定され
ており、また中心導体46は半田を介して回路基板上の
配線導体に電気的に接続される。
The coaxial connector 43 is made of Fe-Ni-
At the center of a cylindrical outer conductor 44 made of a metal such as a Co alloy, a rod-shaped center conductor 46 also made of a metal such as an Fe-Ni-Co alloy is fixed via a glass member 45. The conductor 46 is electrically connected to a wiring conductor on a circuit board via solder.

【0010】[0010]

【発明が解決しようとする課題】しかしながら、上記従
来例1の封着材挿入部42bを設けた半導体パッケージ
においては、側壁42に設けた貫通孔42a内に同軸コ
ネクタ43を挿入するとともに、封着材挿入部42bに
封着材41となるリング状の半田材を挿入保持させ、し
かる後、この半田材を加熱溶融させて同軸コネクタ43
を固定すると、封着材挿入部42bに挿入したリング状
の半田材は貫通孔42aの内壁と同軸コネクタ43との
問の隙間に移動するため、側壁42の外面側で同軸コネ
クタ43の周囲に封着材挿入部42bが段差として残っ
てしまう。
However, in the semiconductor package provided with the sealing material insertion portion 42b of the prior art example 1, the coaxial connector 43 is inserted into the through hole 42a provided in the side wall 42, and the sealing is performed. A ring-shaped solder material serving as the sealing material 41 is inserted and held in the material insertion portion 42b, and then the solder material is heated and melted to form a coaxial connector 43.
Is fixed, the ring-shaped solder material inserted into the sealing material insertion portion 42b moves to the gap between the inner wall of the through hole 42a and the coaxial connector 43, so that the outer surface of the side wall 42 surrounds the coaxial connector 43. The sealing material insertion portion 42b remains as a step.

【0011】このように、側壁42の外面で同軸コネク
タ43の周囲に封着材挿入部42bによる段差がある
と、同紬コネクタ43に接続される外部の同軸ケーブル
の外周導体の内径が同軸コネクタの外周導体44の外径
より大きな場合は、同軸コネクタ43と外部の同軸ケー
ブルとを接続すると、同軸ケーブルの外周導体の内周面
が段差の部分に位置することになる。そして、このよう
に接続された同軸ケーブルと同軸コネクタ43との間に
高周波信号を伝搬させると、高周波信号は表皮効果によ
り、同軸コネクタ43及び同軸ケーブルの中心導体の表
面とこれに対応する外周導体の内周面近傍を流れようと
する。
As described above, when there is a step due to the sealing material insertion portion 42b around the coaxial connector 43 on the outer surface of the side wall 42, the inner diameter of the outer conductor of the external coaxial cable connected to the connector 43 is reduced. When the outer diameter of the outer conductor 44 is larger than the outer diameter of the outer conductor 44, when the coaxial connector 43 is connected to an external coaxial cable, the inner peripheral surface of the outer conductor of the coaxial cable is located at the step. When a high-frequency signal is propagated between the coaxial cable and the coaxial connector 43 connected in this manner, the high-frequency signal is caused by a skin effect and the surface of the central conductor of the coaxial connector 43 and the coaxial cable and the corresponding outer conductor Trying to flow in the vicinity of the inner peripheral surface.

【0012】ところが、同軸ケーブルの外周導体の内周
面は、側壁42の封着材挿入部42bによる段差の部分
に位置していることから、同軸コネクタ43及び同軸ケ
ーブルの外周導体に流れる信号は側壁42の封着材挿入
部42bによる段差を迂回して流れることとなり、この
為同軸コネクタ43及び同軸ケーデルの中心導体を流れ
る信号と、外周導体を流れる信号との間に位相差が発生
してしまい、これに起因して信号の減衰や反射が起こる
ため、信号を効率良く伝搬させることができないという
問題を誘発する結果となっていた。
However, since the inner peripheral surface of the outer conductor of the coaxial cable is located at the stepped portion of the side wall 42 due to the sealing material insertion portion 42b, the signal flowing through the coaxial connector 43 and the outer conductor of the coaxial cable is not transmitted. As a result, a phase difference occurs between the signal flowing through the central conductor of the coaxial connector 43 and the coaxial cable and the signal flowing through the outer peripheral conductor. As a result, the signal is attenuated or reflected, resulting in a problem that the signal cannot be efficiently propagated.

【0013】そこで、このような問題を解決するため
に、本出願人は、側壁に設けられた貫通孔は側壁の外面
側に向けて段状またはテーパー状に直径が広がる封着材
挿入部を有し、かつ封着材挿入部内に同軸コネクタの端
部および側壁の外面と略同じ高さ(略面一)の連続面を
有する導電性弾性部材が取着されているものを提案した
(従来例2:特開平11−186427号公報参照)。
しかしながら、この従来例2では、封着材が形成された
後に導電性弾性部材を実装することから、封着材の高さ
方向のばらつきが導電性弾性部材を側壁に対して平行に
することを妨げる結果となる。また、導電性弾性部材と
同軸コネクタの面は一定ではなく、同軸ケーブルが挿入
されると同軸コネクタと同軸ケーブルとの間に隙間が生
じ、その結果伝送線路の誘電率が変化して高周波信号の
伝送損失が発生し特性劣化につながる結果となってい
た。
[0013] In order to solve such a problem, the present applicant has proposed that a through hole provided in a side wall has a sealing material insertion portion whose diameter increases stepwise or in a tapered shape toward the outer surface side of the side wall. And a conductive elastic member having a continuous surface having substantially the same height (substantially flush) as the end portion of the coaxial connector and the outer surface of the side wall is attached to the sealing material insertion portion. Example 2: See JP-A-11-186427).
However, in the conventional example 2, since the conductive elastic member is mounted after the sealing material is formed, it is necessary to make the height variation of the sealing material parallel to the side wall of the conductive elastic member. The consequences are disturbing. Also, the surfaces of the conductive elastic member and the coaxial connector are not constant, and when the coaxial cable is inserted, a gap is generated between the coaxial connector and the coaxial cable. As a result, the dielectric constant of the transmission line changes and the high-frequency signal As a result, transmission loss occurs and the characteristics are degraded.

【0014】従って、本発明は上記問題に鑑みて完成さ
れたものであり、その目的は、高周波信号を伝送損失を
小さくして円滑に伝達できる光パッケージを提供するこ
とにある。
Accordingly, the present invention has been completed in view of the above problems, and an object of the present invention is to provide an optical package that can transmit a high-frequency signal smoothly with a reduced transmission loss.

【0015】[0015]

【課題を解決するための手段】本発明の光半導体素子収
納用パッケージは、上面に光半導体素子が搭載される搭
載部を有する底板と、該底板の上面外周部に前記搭載部
を囲繞するように立設された枠状の側壁と、該側壁に設
けた貫通孔にその端部を前記側壁外面と略面一となるよ
うに挿入されて封着材により接合される同軸コネクタ
と、前記側壁の上面に接合されて前記光半導体素子を気
密に封止する蓋体とを具備して成り、前記貫通孔の前記
側壁外面側にその直径が前記側壁外面に向けて広がる封
着材挿入部を設けるとともに、該封着材挿入部内に前記
側壁外面および前記同軸コネクタの端部と略面一となる
ように導電性弾性部材を設けていることを特徴とする。
According to the present invention, there is provided an optical semiconductor device housing package having a bottom plate having a mounting portion on which an optical semiconductor device is mounted on an upper surface, and the mounting portion being surrounded by an outer peripheral portion of the upper surface of the bottom plate. A coaxial connector which is inserted into a through hole provided in the side wall so as to be substantially flush with an outer surface of the side wall, and which is joined by a sealing material; A sealing member that is joined to the upper surface of the through hole and hermetically seals the optical semiconductor element, and a sealing material insertion portion whose diameter increases toward the outer surface of the side wall at the outer surface of the side wall of the through hole. In addition, a conductive elastic member is provided in the sealing material insertion portion so as to be substantially flush with the outer surface of the side wall and the end of the coaxial connector.

【0016】本発明は、上記構成により、前記封着材挿
入部内に導電性を有し弾性変形可能な導電性弾性部材が
設置されていることから、同軸コネクタに外部より接続
される同軸ケーブルの接地(アース)用の外周導体の端
部全周が、導電性弾性部材を介して漏れなくほぼ均一に
接続されることとなり、同軸コネクタと同軸ケーブルと
の間に隙間が生じず、同軸ケーブルの外周導体の接続不
良が解消される。その結果、高周波信号の伝送線路に隙
間による誘電率変化が発生しないため、高周波信号の伝
送損失が小さくなり、高周波信号を円滑に伝搬させるこ
とができる。
According to the present invention, since a conductive elastic member having conductivity and elastically deformable is provided in the sealing material insertion portion according to the above configuration, a coaxial cable externally connected to a coaxial connector is provided. The entire circumference of the end of the outer conductor for grounding (earth) is connected almost uniformly without leakage through the conductive elastic member, so that no gap is formed between the coaxial connector and the coaxial cable. The connection failure of the outer conductor is eliminated. As a result, the dielectric constant does not change due to the gap in the transmission line of the high-frequency signal, so that the transmission loss of the high-frequency signal is reduced and the high-frequency signal can be smoothly propagated.

【0017】[0017]

【発明の実施の形態】本発明の光パッケージについて以
下に詳細に説明する。図1は本発明の光パッケージの実
施形態の一例を示す断面図、図2はその要部(同軸コネ
クタ部)拡大断面図であり、これらの図において1は底
板、2は側壁、3は同軸コネクタ、4は蓋体である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The optical package of the present invention will be described in detail below. FIG. 1 is a sectional view showing an example of an embodiment of an optical package according to the present invention, and FIG. 2 is an enlarged sectional view of a main part (coaxial connector part). The connector 4 is a lid.

【0018】本発明の底板1は鉄(Fe)−ニッケル
(Ni)−コバルト(Co)合金や銅(Cu)−タング
ステン(W)合金等の金属から成る略四角形状の板状体
であり、その上面中央部には、LD,PD等の光半導体
素子を搭載するための搭載部1aが形成されており、搭
載部1aには光半導体素子5が、例えばアルミナ(Al
23)質セラミックスから成る回路基板6に実装された
状態で搭載固定される。
The bottom plate 1 of the present invention is made of iron (Fe) -nickel.
(Ni) -cobalt (Co) alloy or copper (Cu) -tang
Substantially square plate made of metal such as stainless (W) alloy
The optical semiconductor such as LD, PD, etc.
A mounting portion 1a for mounting an element is formed.
An optical semiconductor element 5 is provided on the mounting portion 1a, for example, alumina (Al).
TwoOThree) Mounted on a circuit board 6 made of high-quality ceramics
It is mounted and fixed in the state.

【0019】なお、回路基板6に実装された光半導体素
子5は、その電極が回路基板6に被着形成されているメ
タライズ配線導体6aにボンディングワイヤ7等を介し
て電気的に接続されている。
The electrodes of the optical semiconductor element 5 mounted on the circuit board 6 are electrically connected to metallized wiring conductors 6a formed on the circuit board 6 via bonding wires 7 and the like. .

【0020】また、底板1の上面外周部には搭載部1a
を囲繞するようにして、枠状の側壁2が立設されてお
り、側壁2は底板1とともにその内側に光半導体素子5
を収容する空所を形成する。
A mounting portion 1a is provided on the outer peripheral portion of the upper surface of the bottom plate 1.
, A frame-shaped side wall 2 is erected so as to surround the optical semiconductor element 5 together with the bottom plate 1.
To form a space to accommodate

【0021】また、側壁2は底板1と同様にFe−Ni
−Co合金やCu−W合金等の金属から成り、底板1と
一体成形されることによって、あるいは底板1に銀ろう
等のろう材を介してろう付けされたり、シーム溶接法等
の溶接法により溶接されることによって底板1の上面外
周部に立設される。
The side wall 2 is made of Fe—Ni, similarly to the bottom plate 1.
-It is made of a metal such as a Co alloy or a Cu-W alloy and is formed integrally with the bottom plate 1 or brazed to the bottom plate 1 through a brazing material such as silver brazing, or by a welding method such as a seam welding method. It is erected on the outer peripheral portion of the upper surface of the bottom plate 1 by welding.

【0022】この側壁2の一部には、同軸コネクタ3が
挿入固定される貫通孔2aが形成されており、貫通孔2
a内には同軸コネクタ3がその端部を側壁2の外面と略
面一として挿入されるとともに、同軸コネクタ3の外周
面と、それに対向する貫通孔2aの内周面とが、半田か
ら成る封着材8を介して固定されている。
A through hole 2a into which the coaxial connector 3 is inserted and fixed is formed in a part of the side wall 2.
a, the outer peripheral surface of the coaxial connector 3 and the inner peripheral surface of the through hole 2a opposed thereto are formed of solder. It is fixed via a sealing material 8.

【0023】さらに、側壁2に形成された貫通孔2a
は、側壁2の外面側にその直径が側壁2の外面に向けて
全周にわたり段状に広がった封着材挿入部2bを有して
いる。この封着材挿入部2bは、貫通孔2a内に同軸コ
ネクタ3を封着材8を介して挿入固定する際に、貫通孔
2aの内周面と同軸コネクタ3とを固定するための封着
材8となるリング状の半田材を保持する作用をなす。ま
た、封着材挿入部2bは、貫通孔2aの直径が側壁2の
外面に向けて段状に広がったもの、逆テーパー状等の漸
次広がったもの等種々の形状を採り得る。
Further, a through hole 2a formed in the side wall 2 is provided.
Has a sealing material insertion portion 2 b on the outer surface side of the side wall 2, the diameter of which expands stepwise over the entire circumference toward the outer surface of the side wall 2. When the coaxial connector 3 is inserted and fixed in the through hole 2a via the sealing material 8, the sealing material insertion portion 2b is used for sealing between the inner peripheral surface of the through hole 2a and the coaxial connector 3. It functions to hold the ring-shaped solder material serving as the material 8. Further, the sealing material insertion portion 2b can take various shapes, such as a shape in which the diameter of the through-hole 2a is stepped toward the outer surface of the side wall 2, or a shape in which the diameter gradually widens, such as an inverted taper shape.

【0024】側壁2に形成された貫通孔2aは、その直
径が側壁2の外面に向けて全周にわたり段状に広がった
封着材挿入部2bを有していることから、貫通孔2a内
に同軸コネクタ3を挿入するとともに、この封着材挿入
部2b内に貫通孔2aの内周面とそれに対向する同軸コ
ネクタ3の外周面とを接合するための封着材8となる、
リング状の半田材を挿入保持させて、この半田材を加熱
溶融させれば、貫通孔2aの内周面と同軸コネクタ3の
外周面との間の隙間が全周にわたり封着材8により充填
されることとなる。
The through hole 2a formed in the side wall 2 has a sealing material insertion portion 2b whose diameter is stepwise spread over the entire circumference toward the outer surface of the side wall 2, so that the through hole 2a is formed in the through hole 2a. And a sealing material 8 for joining the inner peripheral surface of the through hole 2a and the outer peripheral surface of the coaxial connector 3 facing the inner peripheral surface of the through hole 2a into the sealing material insertion portion 2b.
When the ring-shaped solder material is inserted and held and the solder material is heated and melted, the gap between the inner peripheral surface of the through hole 2a and the outer peripheral surface of the coaxial connector 3 is filled with the sealing material 8 over the entire circumference. Will be done.

【0025】側壁2の貫通孔2a内に挿入固定される同
軸コネクタ3は、内部に収容する光半導体素子5を外部
の同軸ケーブル9に電気的に接続するものであり、Fe
−Ni−Co合金等の金属から成る円筒状の外周導体3
aの中心部に、同じくFe−Ni−Co合金等の金属か
ら成る中心導体3bが、封着ガラス部材3cを介して固
定された構造をしている。
The coaxial connector 3 inserted and fixed in the through hole 2a of the side wall 2 electrically connects the optical semiconductor element 5 housed therein to an external coaxial cable 9,
-Cylindrical outer conductor 3 made of metal such as Ni-Co alloy
A central conductor 3b, which is also made of a metal such as an Fe-Ni-Co alloy, is fixed to a central portion of a through a sealing glass member 3c.

【0026】この同軸コネクタ3は、外周導体3aが側
壁2に封着材8を介して、また中心導体3bが回路基板
6の配線導体6aに半田等の導電性接着剤を介してそれ
ぞれ電気的に接続されている。
In the coaxial connector 3, the outer conductor 3a is electrically connected to the side wall 2 via the sealing material 8 and the center conductor 3b is electrically connected to the wiring conductor 6a of the circuit board 6 via a conductive adhesive such as solder. It is connected to the.

【0027】また、側壁2の貫通孔2aの封着材挿入部
2bには、同軸コネクタの端部および前記側壁の外面と
略面一の連続面を形成する、シリコン樹脂、合成ゴム等
の弾性材料からなり、導電性微粒子等を含有させるとい
った手段等により導電性が付与されたリング状の導電性
弾性部材10が、封着材挿入部2bにより形成される側
壁2の外面と同軸コネクタ3の端部との間の段差を埋め
るように、半田等の封着材8を介して取着される。ある
いは、熱硬化性樹脂等からなる導電性弾性部材10が流
動体のまま封着材挿入部2bに流入され、100〜30
0℃の温度に加熱硬化されることによって、形成され
る。
The sealing material insertion portion 2b of the through hole 2a of the side wall 2 has a continuous surface almost flush with the end of the coaxial connector and the outer surface of the side wall. A ring-shaped conductive elastic member 10 made of a material and imparted with conductivity by means of containing conductive fine particles or the like is provided between the outer surface of the side wall 2 formed by the sealing material insertion portion 2b and the coaxial connector 3. It is attached via a sealing material 8 such as solder so as to fill a step between the ends. Alternatively, the conductive elastic member 10 made of a thermosetting resin or the like flows into the sealing material insertion portion 2b as a fluid, and
It is formed by heating and curing at a temperature of 0 ° C.

【0028】上記導電性弾性部材10は、その電気抵抗
率は1×10-3Ωm以下であることが好ましく、1×1
-3Ωmを超えると、高周波信号のシールド(電磁遮
蔽)効果が劣化し易くなり、高周波信号の伝搬を妨げる
こととなる。また、導電性を付与するために導電性微粒
子等を含有させる場合、Ag,Au,Pt,Pd,C
u,Al,Fe,Sn,In,W,Mo,Mn,Ni,
Cr,Ti,Zn,Ru,Rh,Zr,Cu−Zn,S
US(ステンレススチール)等の導電性の高い元素およ
び材料からなる導電性微粒子を含有させることにより行
うことができる。
The conductive elastic member 10 preferably has an electric resistivity of 1 × 10 −3 Ωm or less, preferably 1 × 1 −3 Ωm or less.
If it exceeds 0 -3 Ωm, the shielding (electromagnetic shielding) effect of the high-frequency signal tends to be deteriorated, and the propagation of the high-frequency signal is hindered. When conductive fine particles or the like are contained for imparting conductivity, Ag, Au, Pt, Pd, C
u, Al, Fe, Sn, In, W, Mo, Mn, Ni,
Cr, Ti, Zn, Ru, Rh, Zr, Cu-Zn, S
It can be performed by incorporating conductive fine particles made of a highly conductive element and material such as US (stainless steel).

【0029】これらの導電性微粒子の平均粒径は、0.
01〜10μmが好ましく、0.01μm未満では、導
電性微粒子が凝集したり偏在し易くなるため、導電性弾
性部材10全体に均一に導電性を付与することが困難に
なる。10μmを超えると、導電性微粒子の固体として
の性質が強く影響するため導電性弾性部材10の弾性を
妨げる傾向がある。
The average particle size of these conductive fine particles is 0.1.
When the thickness is less than 0.01 μm, the conductive fine particles are likely to be aggregated or unevenly distributed, so that it is difficult to uniformly impart conductivity to the entire conductive elastic member 10. If it exceeds 10 μm, the properties of the conductive fine particles as a solid are strongly affected, and the elasticity of the conductive elastic member 10 tends to be hindered.

【0030】導電性微粒子の導電性弾性部材10中での
含有量は、3〜50重量%が好ましく、3重量%未満で
は、導電性弾性部材10の電気抵抗率が大きくなりシー
ルド効果が劣化し、50重量%を超えると、導電性弾性
部材10の弾性を妨げることとなる。
The content of the conductive fine particles in the conductive elastic member 10 is preferably 3 to 50% by weight, and if the content is less than 3% by weight, the electrical resistivity of the conductive elastic member 10 becomes large and the shielding effect is deteriorated. , 50% by weight, the elasticity of the conductive elastic member 10 is hindered.

【0031】また、導電性弾性部材10は、同軸ケーブ
ル9を外部より同軸コネクタ3に圧接または圧着させた
際に、導電性弾性部材10が弾性変形することにより同
軸コネクタ3と同軸ケーブル9との間に隙間が形成され
ないようにするものであり、その反発弾性は30%以上
が好ましく、30%未満では、弾性変形が不十分なた
め、同軸ケーブル9を外部より15kg/cm2程度の
通常の外力で同軸コネクタ3に圧着させた場合、同軸コ
ネクタ3と同軸ケーブル9との間の0.1mm程度の隙
間が消失せず、残ってしまう。また、反発弾性は80%
以下がよく、これを超えると導電性弾性部材10がゲル
状になるため圧縮方向からずれてはみだし易くなり、そ
の結果同軸コネクタ3と同軸ケーブル9との隙間に入り
込み、高周波信号(RF信号)端子としての中心導体3
bと接地導体としての外周導体3aとが電気的に短絡
(ショート)することとなる。
Further, when the coaxial cable 9 is pressed or crimped to the coaxial connector 3 from the outside, the conductive elastic member 10 elastically deforms the conductive elastic member 10 so that the coaxial connector 3 and the coaxial cable 9 are connected to each other. is intended to prevent the gap is formed between, the impact resilience is preferably at least 30%, is less than 30%, since the elastic deformation is insufficient, the coaxial cable 9 from the outside 15 kg / cm 2 about normal When the coaxial connector 3 is crimped by an external force, a gap of about 0.1 mm between the coaxial connector 3 and the coaxial cable 9 does not disappear and remains. The rebound resilience is 80%
The following is preferable, and if it exceeds this, the conductive elastic member 10 becomes gel-like and easily slips out of the compression direction, and as a result, enters the gap between the coaxial connector 3 and the coaxial cable 9 to generate a high frequency signal (RF signal) terminal. Center conductor 3 as
b and the outer peripheral conductor 3a as a ground conductor are electrically short-circuited (short-circuited).

【0032】さらに、リング状の導電性弾性部材10の
幅は0.1mm以上、厚さは0.1〜1.0mm程度が
良く、幅が0.1mm未満では、プレス成型法等により
作製する際に形状を正確に規定することが困難になる。
また、厚さが0.1mm未満では、導電性弾性部材10
の弾性変形幅が小さくなり、弾性体としての特性が劣化
する。厚さが1.0mmを超えると、外周導体3aと同
軸ケーブル9の外周導体9aとの間の導電路が長くな
り、導電性弾性部材10での電気抵抗が大きくなる傾向
にあり、その結果外周導体3aと外周導体9aとの導電
作用およびシールド性が劣化し易くなる。
Further, the width of the ring-shaped conductive elastic member 10 is preferably 0.1 mm or more, and the thickness is preferably about 0.1 to 1.0 mm. If the width is less than 0.1 mm, it is manufactured by a press molding method or the like. In this case, it is difficult to accurately define the shape.
If the thickness is less than 0.1 mm, the conductive elastic member 10
Has a small elastic deformation width, and the characteristics of the elastic body deteriorate. If the thickness exceeds 1.0 mm, the conductive path between the outer conductor 3a and the outer conductor 9a of the coaxial cable 9 becomes longer, and the electrical resistance of the conductive elastic member 10 tends to increase. The conductive action between the conductor 3a and the outer conductor 9a and the shielding properties are likely to deteriorate.

【0033】また、導電性弾性部材10は弾性変形する
ことから、図4に示すように、側壁2の外面からある程
度突出していてもよく、その突出長さは0mmを超え
0.5mm以下が好ましい。突出長さが0.5mmを超
えると、同軸ケーブル9を同軸コネクタ3に圧着させる
場合に、導電性弾性部材10の弾性変形による圧縮幅が
突出長さより小さくなり易く、同軸ケーブル9と同軸コ
ネクタ3との間に隙間が形成され易くなる。
Since the conductive elastic member 10 is elastically deformed, it may protrude to some extent from the outer surface of the side wall 2 as shown in FIG. 4, and the protruding length is preferably more than 0 mm and 0.5 mm or less. . When the protruding length exceeds 0.5 mm, when the coaxial cable 9 is crimped to the coaxial connector 3, the compression width due to the elastic deformation of the conductive elastic member 10 tends to be smaller than the protruding length, and the coaxial cable 9 and the coaxial connector 3 are compressed. Is easily formed between them.

【0034】本発明の光パッケージによれば、このよう
に封着材挿入部2bに側壁2の外面と同軸コネクタ3の
端部との間の段差を埋めるリング状の導電性弾性部材1
0が取着されていることから、側壁2において同軸コネ
クタ3の端部の周囲に段差が形成されることはない。ま
た、同軸コネクタ3の端部とリング状の導電性弾性部材
10の端部に段差が生じた場合でも、導電性弾性部材1
0の弾性変形により段差の形成を抑制し得る。
According to the optical package of the present invention, the ring-shaped conductive elastic member 1 filling the step between the outer surface of the side wall 2 and the end of the coaxial connector 3 in the sealing material insertion portion 2b.
Since 0 is attached, no step is formed around the end of the coaxial connector 3 on the side wall 2. Further, even when a step is generated between the end of the coaxial connector 3 and the end of the ring-shaped conductive elastic member 10, the conductive elastic member 1
The formation of a step can be suppressed by the elastic deformation of zero.

【0035】従って、同軸コネクタ3に接続される外部
の同軸ケーブル9の外周導体9aの内径が同軸コネクタ
3の外周導体3aの外径よりも大きな場合であっても、
同軸コネクタ3および同軸ケーブル9の外周導体3a,
9aの内周面近傍を流れる高周波信号が封着材挿入部2
bにより形成される段差を迂回して流れることはない。
また、同軸コネクタ3が側壁2の外面から突出した場合
でも、本発明の導電性弾性部材10を用いることで、同
軸ケーブル9を同軸コネクタ3に密着できるため、同軸
コネクタ3と同軸ケーブル9との間で高周波信号を効率
よく伝搬させることができる。
Therefore, even when the inner diameter of the outer conductor 9a of the external coaxial cable 9 connected to the coaxial connector 3 is larger than the outer diameter of the outer conductor 3a of the coaxial connector 3,
Outer conductors 3a of the coaxial connector 3 and the coaxial cable 9;
The high-frequency signal flowing near the inner peripheral surface of the sealing material insertion portion 2a
It does not flow around the step formed by b.
Further, even when the coaxial connector 3 protrudes from the outer surface of the side wall 2, the coaxial cable 9 can be in close contact with the coaxial connector 3 by using the conductive elastic member 10 of the present invention. High-frequency signals can be efficiently propagated between them.

【0036】なお、同軸コネクタ3を側壁2の貫通孔2
a内に封着材8を介して固定するには、側壁2の貫通孔
2a内に同軸コネクタ3をその端部が側壁2の外面と略
面一となるように挿入するとともに、貫通孔2aの封着
材挿入部2bに封着材8となる例えばリング状の半田材
およびリング状の導電性弾性部材10を同軸コネクタ3
の端部を取り囲むようにして挿入し、しかる後、半田材
を一旦加熱溶融させてから冷却固化させる方法が採用さ
れる。その結果、溶融したリング状の半田材は貫通孔2
aの内周面と同軸コネクタ3の外周面との間の隙間の全
周にわたり充填されて封着材8となり、これにより側壁
2の内外の気密が損なわれることは一切ないものとな
る。
The coaxial connector 3 is connected to the through hole 2 in the side wall 2.
a, the coaxial connector 3 is inserted into the through hole 2a of the side wall 2 so that its end is substantially flush with the outer surface of the side wall 2, and the through hole 2a is fixed. For example, a ring-shaped solder material and a ring-shaped conductive elastic member 10 serving as the sealing material 8 are inserted into the sealing material insertion portion 2b.
Is inserted so as to surround the end of the solder material, and then the solder material is heated and melted once, and then cooled and solidified. As a result, the molten ring-shaped solder material was
The sealing material 8 is filled over the entire circumference of the gap between the inner peripheral surface a and the outer peripheral surface of the coaxial connector 3 to form the sealing material 8, whereby the inside and outside airtightness of the side wall 2 is not impaired at all.

【0037】本発明において、光半導体素子5駆動用の
高周波信号の周波数帯域は特に限定するものではない
が、1〜100GHz程度の高周波帯域および超高周波
帯域であり、例えば実際には1〜70GHz程度、特に
は10〜40GHz程度である。
In the present invention, the frequency band of the high-frequency signal for driving the optical semiconductor element 5 is not particularly limited, but is a high-frequency band of about 1 to 100 GHz and a super-high-frequency band. , Especially about 10 to 40 GHz.

【0038】かくして、本発明の光パッケージによれ
ば、底板1の搭載部1aに光半導体素子5をその電極と
電気的に接続された配線導体6aを有する回路基板6に
実装した状態で搭載固定し、しかる後、回路基板6の配
線導体6aと同軸コネクタ3の中心導体3bとを半田を
介して電気的に接続し、しかる後、側壁2の上面にFe
−Ni−Co合金等の金属から成る蓋体4を半田付け法
やシームウェルド法により接合することにより、製品と
しての光半導体装置となり、また同軸コネクタ3と外部
の同軸ケーブル9とを接続することにより内部に収容す
る光半導体素子5が外部電気回路に電気的に接続される
こととなる。
Thus, according to the optical package of the present invention, the optical semiconductor element 5 is mounted and fixed on the circuit board 6 having the wiring conductor 6a electrically connected to its electrode on the mounting portion 1a of the bottom plate 1. Thereafter, the wiring conductor 6a of the circuit board 6 and the center conductor 3b of the coaxial connector 3 are electrically connected to each other via solder.
Bonding the lid 4 made of a metal such as a Ni-Co alloy by a soldering method or a seam welding method to form an optical semiconductor device as a product, and connecting the coaxial connector 3 to an external coaxial cable 9; As a result, the optical semiconductor element 5 housed inside is electrically connected to an external electric circuit.

【0039】なお、本発明は上記実施形態の例に限定さ
れるものではなく、本発明の要旨を逸脱しない範囲内で
あれば種々の変更は何ら差し支えない。例えば、上記実
施形態の例では、側壁2に形成された貫通孔2aに段状
の封着材挿入部2bを設けたが、これを、図3の断面図
に示すように、逆テーパー状の封着材挿入部2bとして
もよい。また、側壁2の同軸コネクタ3が設けられた側
部以外の他の側部に、貫通孔や切欠部等を形成して、光
ファイバ固定用の筒状の固定部材や入出力端子を嵌着し
てもよい。
It should be noted that the present invention is not limited to the above-described embodiment, and various changes may be made without departing from the scope of the present invention. For example, in the example of the above-described embodiment, the step-like sealing material insertion portion 2b is provided in the through hole 2a formed in the side wall 2, but as shown in the cross-sectional view of FIG. The sealing material insertion portion 2b may be used. Further, a through hole, a notch, or the like is formed on a side of the side wall 2 other than the side where the coaxial connector 3 is provided, and a cylindrical fixing member for fixing an optical fiber and an input / output terminal are fitted. May be.

【0040】[0040]

【発明の効果】本発明は、貫通孔の側壁外面側にその直
径が側壁外面に向けて広がる封着材挿入部を設けるとと
もに、封着材挿入部内に側壁外面および同軸コネクタの
端部と略面一となるように導電性弾性部材を設けている
ことにより、同軸コネクタに外部より接続される同軸ケ
ーブルの接地用の外周導体の端部全周が、導電性弾性部
材を介して漏れなくほぼ均一に接続されることとなり、
同軸コネクタと同軸ケーブルとの間に隙間が生じず、同
軸ケーブルの外周導体の接続不良が解消される。その結
果、高周波信号の伝送線路に隙間による誘電率変化が発
生しないため、高周波信号の伝送損失が小さくなり、高
周波信号を円滑に伝搬させることができる。
According to the present invention, a sealing material insertion portion whose diameter is widened toward the outer surface of the side wall is provided on the outer surface of the side wall of the through-hole, and the outer surface of the side wall and the end of the coaxial connector are substantially formed within the sealing material insertion portion. By providing the conductive elastic member so as to be flush, the entire circumference of the end of the grounding outer peripheral conductor of the coaxial cable connected from the outside to the coaxial connector is almost completely leaked through the conductive elastic member. It will be connected uniformly,
There is no gap between the coaxial connector and the coaxial cable, and the poor connection of the outer conductor of the coaxial cable is eliminated. As a result, the dielectric constant does not change due to the gap in the transmission line of the high-frequency signal, so that the transmission loss of the high-frequency signal is reduced and the high-frequency signal can be smoothly propagated.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の光パッケージの一実施形態を示す断面
図である。
FIG. 1 is a sectional view showing an embodiment of an optical package of the present invention.

【図2】図1の光パッケージの要部拡大断面図である。FIG. 2 is an enlarged sectional view of a main part of the optical package of FIG.

【図3】本発明の光パッケージの他の実施形態を示し、
その要部拡大断面図である。
FIG. 3 shows another embodiment of the optical package of the present invention;
It is a principal part expanded sectional view.

【図4】本発明の光パッケージの他の実施形態を示し、
その要部拡大断面図である。
FIG. 4 shows another embodiment of the optical package of the present invention;
It is a principal part expanded sectional view.

【図5】従来の光パッケージの要部拡大断面図である。FIG. 5 is an enlarged sectional view of a main part of a conventional optical package.

【図6】従来の光パッケージの1例を示す断面図であ
る。
FIG. 6 is a sectional view showing an example of a conventional optical package.

【図7】図6の光パッケージの要部拡大断面図である。FIG. 7 is an enlarged sectional view of a main part of the optical package of FIG. 6;

【符号の説明】[Explanation of symbols]

1:底板 1a:搭載部 2:側壁 2a:貫通孔 2b:封着材挿入部 3:同軸コネクタ 4:蓋体 5:光半導体素子 9:同軸ケーブル 1: bottom plate 1a: mounting portion 2: side wall 2a: through hole 2b: sealing material insertion portion 3: coaxial connector 4: lid 5: optical semiconductor element 9: coaxial cable

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】上面に光半導体素子が搭載される搭載部を
有する底板と、該底板の上面外周部に前記搭載部を囲繞
するように立設された枠状の側壁と、該側壁に設けた貫
通孔にその端部を前記側壁外面と略面一となるように挿
入されて封着材により接合される同軸コネクタと、前記
側壁の上面に接合されて前記光半導体素子を気密に封止
する蓋体とを具備して成り、前記貫通孔の前記側壁外面
側にその直径が前記側壁外面に向けて広がる封着材挿入
部を設けるとともに、該封着材挿入部内に前記側壁外面
および前記同軸コネクタの端部と略面一となるように導
電性弾性部材を設けていることを特徴とする光半導体素
子収納用パッケージ。
1. A bottom plate having a mounting portion on which an optical semiconductor element is mounted on an upper surface, a frame-shaped side wall provided on an outer peripheral portion of the upper surface of the bottom plate so as to surround the mounting portion, and provided on the side wall. A coaxial connector, the end of which is inserted into the through hole so as to be substantially flush with the outer surface of the side wall and is joined by a sealing material, and the optical semiconductor element is joined to the upper surface of the side wall to hermetically seal the optical semiconductor element And a sealing material insertion portion whose diameter increases toward the outer surface of the side wall is provided on the outer surface side of the side wall of the through hole, and the outer surface of the side wall and the inner surface of the sealing material insertion portion are provided. A package for storing an optical semiconductor element, wherein a conductive elastic member is provided so as to be substantially flush with an end of a coaxial connector.
JP2000044763A 2000-02-22 2000-02-22 Package for housing optical semiconductor element Pending JP2001237482A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000044763A JP2001237482A (en) 2000-02-22 2000-02-22 Package for housing optical semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000044763A JP2001237482A (en) 2000-02-22 2000-02-22 Package for housing optical semiconductor element

Publications (1)

Publication Number Publication Date
JP2001237482A true JP2001237482A (en) 2001-08-31

Family

ID=18567475

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000044763A Pending JP2001237482A (en) 2000-02-22 2000-02-22 Package for housing optical semiconductor element

Country Status (1)

Country Link
JP (1) JP2001237482A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003100927A (en) * 2001-09-21 2003-04-04 Kyocera Corp Package for accommodating semiconductor element
JP2004207259A (en) * 2002-10-04 2004-07-22 Kyocera Corp Optical semiconductor device and package for housing the same
US7070340B2 (en) * 2001-08-29 2006-07-04 Silicon Bandwidth Inc. High performance optoelectronic packaging assembly
JP2011255536A (en) * 2010-06-07 2011-12-22 Ricoh Elemex Corp Connection device, and printing system
JP2012134350A (en) * 2010-12-22 2012-07-12 Kyocera Corp Semiconductor device package structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0536451A (en) * 1991-07-29 1993-02-12 Mitsubishi Electric Corp Coaxial connector for microwave integrated circuit
JPH11186427A (en) * 1997-12-25 1999-07-09 Kyocera Corp Package for housing semiconductor element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0536451A (en) * 1991-07-29 1993-02-12 Mitsubishi Electric Corp Coaxial connector for microwave integrated circuit
JPH11186427A (en) * 1997-12-25 1999-07-09 Kyocera Corp Package for housing semiconductor element

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7070340B2 (en) * 2001-08-29 2006-07-04 Silicon Bandwidth Inc. High performance optoelectronic packaging assembly
JP2003100927A (en) * 2001-09-21 2003-04-04 Kyocera Corp Package for accommodating semiconductor element
JP4605957B2 (en) * 2001-09-21 2011-01-05 京セラ株式会社 Package for storing semiconductor elements
JP2004207259A (en) * 2002-10-04 2004-07-22 Kyocera Corp Optical semiconductor device and package for housing the same
JP2011255536A (en) * 2010-06-07 2011-12-22 Ricoh Elemex Corp Connection device, and printing system
JP2012134350A (en) * 2010-12-22 2012-07-12 Kyocera Corp Semiconductor device package structure

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