JPH11181584A - Substrate treatment apparatus - Google Patents

Substrate treatment apparatus

Info

Publication number
JPH11181584A
JPH11181584A JP34937197A JP34937197A JPH11181584A JP H11181584 A JPH11181584 A JP H11181584A JP 34937197 A JP34937197 A JP 34937197A JP 34937197 A JP34937197 A JP 34937197A JP H11181584 A JPH11181584 A JP H11181584A
Authority
JP
Japan
Prior art keywords
substrate
container
chemical
opening
pure water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP34937197A
Other languages
Japanese (ja)
Inventor
Takuo Higashijima
拓生 東島
Kenichi Kashii
賢一 香椎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Development and Engineering Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Engineering Co Ltd filed Critical Toshiba Corp
Priority to JP34937197A priority Critical patent/JPH11181584A/en
Publication of JPH11181584A publication Critical patent/JPH11181584A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus capable of immediately executing pure water cleaning right after the stop of a medicinal liquid treatment and decreasing the volume of waste medicinal liquids. SOLUTION: This apparatus includes a first vessel 4 for executing the first treatment of a substrate 1 and a second vessel 5 for executing the second treatment of the substrate 1 and is provided with an aperture 13 and a substrate vertical driving means 10 to allow the substrate 1 to move between these vessels 4 and 5. The first vessel 4 is provided with a first discharge port 8 and the second vessel 5 with a second discharge port 9 in order to separately recover the waste liquids generated in the first and second treatments.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、基板処理装置に係
り、より詳細には、基板表面への現像処理やエッチング
処理等の薬液処理・純水洗浄を行うための基板処理装置
に関する。
[0001] 1. Field of the Invention [0002] The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus for performing a chemical solution processing such as a development processing and an etching processing on a substrate surface and a pure water cleaning.

【0002】[0002]

【従来の技術】液晶表示素子や半導体装置の製造におい
て、基板に配線や素子を形成する場合、複雑かつ微細な
加工が要求される。このような加工に必要な処理とし
て、例えば、以下に示すレジストの現像処理やエッチン
グ処理等の薬液により基板表面を処理する基板薬液処理
がある。
2. Description of the Related Art In the manufacture of liquid crystal display elements and semiconductor devices, when wirings and elements are formed on a substrate, complicated and fine processing is required. As a process necessary for such processing, for example, there is a substrate chemical treatment for treating the substrate surface with a chemical such as a resist development treatment or an etching treatment described below.

【0003】基板面への回路パターンの形成に当たり、
まず、基板面に、回路パターンを構成する材料からなる
被膜を形成する。この被膜上に感光剤を塗布して感光膜
を形成し、この感光膜に回路パターンを露光し、次いで
現像することによりレジストパターンを形成する。な
お、このレジストパターンの形成においては、必要に応
じて感光剤の除去に所定の薬液が用いられ、基板面に残
留する薬液は水洗により除去される。
In forming a circuit pattern on a substrate surface,
First, a film made of a material constituting a circuit pattern is formed on a substrate surface. A photosensitive agent is applied on the film to form a photosensitive film, and the photosensitive film is exposed to a circuit pattern and then developed to form a resist pattern. In forming the resist pattern, a predetermined chemical is used for removing the photosensitive agent as necessary, and the chemical remaining on the substrate surface is removed by washing with water.

【0004】次に、基板上に形成された被膜を、レジス
トパターンをマスクとして、エッチング液によりエッチ
ングし、水洗により基板面に残留するエッチング液を除
去する。さらに、レジストパターンを所定の薬液で除去
し、水洗で残留する薬液を除去することにより、基板面
に回路パターンが形成される。
Next, the coating formed on the substrate is etched with an etching solution using the resist pattern as a mask, and the etching solution remaining on the substrate surface is removed by washing with water. Further, a circuit pattern is formed on the substrate surface by removing the resist pattern with a predetermined chemical solution and removing the remaining chemical solution by washing with water.

【0005】このような基板薬液処理では、薬液を用い
た基板表面の処理と、純水による水洗処理とが繰り返さ
れており、このような工程は、一般に、図3に示す基板
処理装置を用いて行われる。
In such a substrate chemical treatment, treatment of the substrate surface using a chemical and washing with pure water are repeated, and such a process is generally performed by using a substrate treatment apparatus shown in FIG. Done.

【0006】図3に示す装置では、基板31は、回転チ
ャック32により支持されており、回転チャック32
は、モータ33の回転軸の一端に固定されている。これ
ら基板31及び回転チャック32は、上部に開口部35
が設けられたカップ34に収容され、この開口部の上方
には、それぞれの吐出口が基板31の中央に向けられて
ノズル36、37が配置されている。カップ34内に
は、整流板39が、基板31及び回転チャック32の下
方に位置するように配置され、カップ34の下部には、
排出口38が設けられている。
In the apparatus shown in FIG. 3, a substrate 31 is supported by a rotary chuck 32,
Is fixed to one end of the rotation shaft of the motor 33. The substrate 31 and the rotary chuck 32 have an opening 35 at the top.
The nozzles 36 and 37 are arranged above the opening with their discharge ports facing the center of the substrate 31. In the cup 34, a rectifying plate 39 is disposed so as to be located below the substrate 31 and the rotary chuck 32.
An outlet 38 is provided.

【0007】この基板処理装置を用いた薬液処理・純水
洗浄処理について、以下に説明する。まず、基板31
を、搬送装置(図示せず)により、基板31の被処理面
が上方を向くように回転チャック32に設置する。モー
タ33を駆動し、基板31を100rpm程度の回転数
で回転させ、ノズル36から基板31の中心に向けて薬
液を吐出する。基板31の基板面に吐出された薬液は、
遠心力により基板面に広がり、過剰な薬液は基板31の
外周から振り切られ、カップ34の内壁に付着後、排出
口38から回収される。
The chemical processing and the pure water cleaning processing using the substrate processing apparatus will be described below. First, the substrate 31
Is mounted on the rotary chuck 32 by a transfer device (not shown) such that the surface to be processed of the substrate 31 faces upward. The motor 33 is driven to rotate the substrate 31 at a rotation speed of about 100 rpm, and the chemical liquid is discharged from the nozzle 36 toward the center of the substrate 31. The chemical discharged on the substrate surface of the substrate 31 is
The excess chemical solution is spread on the substrate surface by the centrifugal force, and is shaken off from the outer periphery of the substrate 31, adhered to the inner wall of the cup 34, and collected from the outlet 38.

【0008】薬液が基板面全体に広がった後、ノズル3
6からの薬液の吐出を停止し、モータ33を止めて基板
31を静止した状態で、薬液処理を行う。所定時間経過
後、基板31を100rpm程度の回転数で回転させ、
ノズル37から基板31の中心に向けて純水を吐出し
て、基板面の洗浄を行う。この際、基板面に吐出された
純水も、薬液と同様に排出口38から回収される。基板
面の薬液が純水により充分置換された後、純水の吐出を
停止し、基板31の回転数を2000rpm程度まで上
昇させて、基板31を乾燥する。ここで基板31から振
り切られる純水も排出口38から回収される。
After the chemical has spread over the entire substrate surface, the nozzle 3
The chemical solution processing is performed in a state where the discharge of the chemical solution from 6 is stopped, the motor 33 is stopped, and the substrate 31 is stopped. After a lapse of a predetermined time, the substrate 31 is rotated at a rotation speed of about 100 rpm,
Pure water is discharged from the nozzle 37 toward the center of the substrate 31 to clean the substrate surface. At this time, pure water discharged onto the substrate surface is also collected from the outlet 38 in the same manner as the chemical solution. After the chemical liquid on the substrate surface has been sufficiently replaced with pure water, the discharge of the pure water is stopped, the rotation speed of the substrate 31 is increased to about 2000 rpm, and the substrate 31 is dried. Here, the pure water shaken off from the substrate 31 is also collected from the outlet 38.

【0009】上述の薬液処理で回収される廃液は、エッ
チング液や現像液等の薬液を高濃度で含んでいる。この
ような高濃度のエッチング液や現像液等は、酸アルカリ
廃液の処理に用いられる通常の廃液処理設備では分解処
理することができない。そのため、この廃液は、装置の
外部に設けたタンクに回収され、定期的に専用の廃液処
理業者に分解処理委託する。しかしながら、この廃液量
は、生産規模に比例して多くなり、回収・処理に要する
費用も高額となる。それゆえ、廃液量を極力少なくする
ことが望まれている。
The waste liquid recovered by the above-mentioned chemical treatment contains a high concentration of a chemical such as an etching solution or a developing solution. Such a high-concentration etching solution, developing solution, or the like cannot be decomposed by ordinary waste liquid treatment equipment used for treating acid-alkali waste liquid. For this reason, this waste liquid is collected in a tank provided outside the apparatus, and is periodically contracted to a dedicated waste liquid processing company for decomposition treatment. However, the amount of waste liquid increases in proportion to the production scale, and the cost required for recovery and treatment also increases. Therefore, it is desired to minimize the amount of waste liquid.

【0010】廃液量を削減する方法として、薬液と純水
の使用量を削減することが考えられる。しかしながら、
薬液と純水の使用量は、現状では、ほぼ一定量が必要と
されており、したがって、使用量の削減は事実上困難で
ある。
As a method of reducing the amount of waste liquid, it is conceivable to reduce the amount of chemical solution and pure water used. However,
At present, almost constant amounts of the chemical solution and the pure water are required, and therefore, it is practically difficult to reduce the amounts of the chemical solution and the pure water.

【0011】廃液量を削減する別の方法として、薬液廃
液と純水廃液とを別々に回収することが考えられる。し
かしながら、例えば、薬液処理と純水洗浄とで、別々の
基板処理装置を用いることにより、薬液廃液と純水廃液
を別々に回収する場合、基板を装置間で移動するのに時
間がかかるため、エッチング等の薬液処理が直ちに停止
されず、パターンの線幅等が不均一になってしまうとい
う問題を生ずる。
As another method for reducing the amount of waste liquid, it is conceivable to separately collect a chemical liquid waste liquid and a pure water waste liquid. However, for example, in the chemical solution treatment and the pure water cleaning, by using separate substrate processing apparatus, when collecting the chemical waste liquid and the pure water waste liquid separately, because it takes time to move the substrate between the apparatuses, There is a problem that the chemical solution processing such as etching is not immediately stopped, and the line width of the pattern becomes non-uniform.

【0012】また、薬液処理と純水洗浄とで同一の基板
処理装置を用い、排出口からの廃液の流れを、薬液処理
時と純水洗浄時とで切り替えて、別々のタンクに回収す
ることが考えられる。しかしながら、カップ内壁や底部
に残留する薬液廃液が純水廃液へ混入してしまうため、
純水廃液を通常の廃液処理設備で処理することができな
い、という問題を生じてしまう。
Further, the same substrate processing apparatus is used for chemical solution treatment and pure water cleaning, and the flow of waste liquid from the discharge port is switched between chemical solution treatment and pure water cleaning and collected in separate tanks. Can be considered. However, since the chemical liquid waste remaining on the inner wall and bottom of the cup is mixed into the pure water waste,
There arises a problem that the pure water waste liquid cannot be treated by ordinary waste liquid treatment equipment.

【0013】[0013]

【発明が解決しようとする課題】上述のように、薬液処
理直後に純水での洗浄を行う必要がある場合、純水廃液
を薬液廃液と分離回収することが困難であるため、多量
の廃液を処理する必要がある。本発明は、薬液処理停止
後、直ちに純水洗浄を行うことができ、かつ薬液廃液量
を低減することが可能な基板処理装置を提供することを
目的とする。
As described above, when it is necessary to wash with pure water immediately after chemical treatment, it is difficult to separate and recover the pure water waste liquid from the chemical waste liquid. Need to be processed. An object of the present invention is to provide a substrate processing apparatus that can perform pure water cleaning immediately after stopping chemical solution processing and that can reduce the amount of chemical solution waste liquid.

【0014】[0014]

【課題を解決するための手段】本発明は、基板を支持す
る基板支持手段と、この基板支持手段により支持された
基板を回転させる基板回転手段と、上部に前記基板が通
過する開口部を有し、前記基板の第1の処理を行う第1
の容器と、前記第1の容器の外周を覆うように形成さ
れ、前記第1の容器の上方において前記基板の第2の処
理を行う第2の容器と、前記基板を、前記第1の容器内
と、その上方の第2の容器内との間を上下動させる基板
上下駆動手段と、前記基板が第1の容器内にあるとき
に、前記基板の上面に第1の液を吐出する第1の吐出部
と、前記基板が第1の容器の上方の第2の容器内にある
ときに、前記基板の上面に第2の液を吐出する第2の吐
出部と、前記第1の容器に設けられ、第1の液を排出す
る第1の排出口と、前記第2の容器に設けられ、第2の
液を排出する第2の排出口と、を具備することを特徴と
する基板処理装置を提供する。
SUMMARY OF THE INVENTION The present invention comprises a substrate supporting means for supporting a substrate, a substrate rotating means for rotating the substrate supported by the substrate supporting means, and an opening in the upper portion through which the substrate passes. And performing a first process on the substrate.
A second container formed so as to cover the outer periphery of the first container and performing a second processing of the substrate above the first container, and the first container Vertical drive means for vertically moving between the inside and a second container above the second container, and a second liquid ejecting a first liquid onto the upper surface of the substrate when the substrate is in the first container. A first discharge unit, a second discharge unit that discharges a second liquid onto an upper surface of the substrate when the substrate is in a second container above the first container, and the first container A substrate provided with a first outlet for discharging a first liquid, and a second outlet provided for the second container and discharging a second liquid. A processing device is provided.

【0015】本発明は、上記基板処理装置において、前
記基板の前記開口部の上方への移動に伴い、前記第1の
容器の開口部を塞ぎ、前記基板の前記開口部の下方への
移動に伴い、前記塞がれた第1の容器の開口部を開放す
る整流板を具備することを特徴とする。本発明は、上記
基板処理装置において、前記第2の容器の上部に、前記
基板の外径よりも大きな径の開口部が設けられているこ
とを特徴とする。
According to the present invention, in the above-described substrate processing apparatus, the opening of the first container is closed with the upward movement of the substrate, and the substrate is moved downward of the opening. A rectifying plate for opening an opening of the closed first container is provided. The present invention is characterized in that, in the substrate processing apparatus, an opening having a diameter larger than an outer diameter of the substrate is provided in an upper portion of the second container.

【0016】[0016]

【発明の実施の形態】以下、本発明の実施の形態につい
て図面を参照しながら説明する。図1に、本発明の一態
様に係る基板処理装置の一断面図を示す。この図で、基
板処理装置は、基盤14と、この基盤14上に配置さ
れ、上部に開口部12を有する第1の容器としてのカッ
プ4と、このカップ4を包含するように配置された、上
部に開口部13を有する第2の容器としてのカップ5と
から構成される。カップ4の開口部12は、基板1を通
過させるように、基板1の外形よりも大きくされてい
る。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 illustrates a cross-sectional view of a substrate processing apparatus according to one embodiment of the present invention. In this figure, the substrate processing apparatus is arranged on a base 14, a cup 4 as a first container disposed on the base 14 and having an opening 12 at an upper part, and arranged to include the cup 4. And a cup 5 as a second container having an opening 13 at the top. The opening 12 of the cup 4 is made larger than the outer shape of the substrate 1 so as to allow the substrate 1 to pass therethrough.

【0017】カップ5の開口部13の上方には、それぞ
れ第1の吐出部及び第2の吐出部としてのノズル6及び
ノズル7が、それぞれの吐出口を基板1の中央に向けて
配置され、カップ4の底部には第1の排出口8が、カッ
プ5の底部には第2の排出口9が、それぞれ設けられて
いる。
Above the opening 13 of the cup 5, a nozzle 6 and a nozzle 7 as a first discharge unit and a second discharge unit, respectively, are arranged with their respective discharge ports facing the center of the substrate 1. A first outlet 8 is provided at the bottom of the cup 4, and a second outlet 9 is provided at the bottom of the cup 5.

【0018】基盤14のカップ4が配置された面の裏面
には、モータ取付部15が設置され、モータ取付部15
には、モータ10及びガイド16が固定されている。モ
ータ10の回転軸に取り付けられたボールスクリュー1
7及びガイド16には、モータ取付板18が垂直方向に
移動可能に設置されており、モータ10、ボールスクリ
ュー17、ガイド16、及びモータ取付板18により、
基板上下駆動手段を構成している。
A motor mounting portion 15 is provided on the back of the surface of the base 14 on which the cup 4 is disposed.
, The motor 10 and the guide 16 are fixed. Ball screw 1 attached to the rotating shaft of motor 10
The motor mounting plate 18 is installed on the 7 and the guide 16 so as to be movable in the vertical direction. The motor 10, the ball screw 17, the guide 16, and the motor mounting plate 18
It constitutes a substrate vertical drive means.

【0019】モータ取付板18の上面には、管19の一
端が、裏面には基板回転手段としてモータ3が取り付け
られている。管19の他端には整流板11が取り付けら
れており、モータ3の回転軸20の端部には、基板1を
支持する回転チャック2が基板支持手段として固定され
ている。
One end of a tube 19 is mounted on the upper surface of the motor mounting plate 18, and the motor 3 is mounted on the rear surface as a substrate rotating means. A rectifying plate 11 is attached to the other end of the tube 19, and a rotary chuck 2 that supports the substrate 1 is fixed to an end of a rotating shaft 20 of the motor 3 as substrate supporting means.

【0020】本発明の基板処理装置で用いられる基板上
下駆動手段は、基板の高さを制御できるものであれば特
に制限はなく、上述したボールスクリュー以外の手段も
用いることができる。
The substrate vertical drive means used in the substrate processing apparatus of the present invention is not particularly limited as long as it can control the height of the substrate, and means other than the above-described ball screw can be used.

【0021】本発明で用いられる第1の容器は、上部
に、基板の径よりも大きい開口部が設けられている必要
がある。また、本発明で用いられる第2の容器は、上部
に基板の外径よりも大きな径の開口部が設けられている
ことが好ましい。このような大きさの開口部が設けられ
ていると、基板を基板支持手段に設置する際に、第2の
容器を取り外す必要が無く、第1の及び第2の吐出部を
可動とする必要が無い。
The first container used in the present invention needs to have, at the top, an opening larger than the diameter of the substrate. Further, it is preferable that the second container used in the present invention has an opening having a diameter larger than the outer diameter of the substrate at an upper portion. When the opening having such a size is provided, it is not necessary to remove the second container when the substrate is placed on the substrate supporting means, and it is necessary to make the first and second discharge portions movable. There is no.

【0022】本発明の基板処理装置において、どのよう
な処理を行うかは任意である。例えば、第1及び第2の
容器のいずれか一方で薬液処理を行い、他方で純水洗浄
を行うことができる。第1または第2の容器の、どちら
で薬液洗浄を行うかは任意であるが、少なくとも薬液洗
浄が行われる容器の内壁は、エッチング液や現像液等の
薬液に対して耐性を有していることが好ましい。容器の
内壁に耐性を与える方法としては、一般的に行われる不
動態化処理を容器の内壁に施すこと等を挙げることがで
きる。
In the substrate processing apparatus of the present invention, what kind of processing is performed is optional. For example, the chemical treatment can be performed in one of the first and second containers, and the pure water cleaning can be performed on the other. Which of the first and second containers performs the chemical cleaning is arbitrary, but at least the inner wall of the container in which the chemical cleaning is performed has resistance to a chemical such as an etching solution or a developing solution. Is preferred. As a method for imparting resistance to the inner wall of the container, a passivation treatment generally performed is applied to the inner wall of the container.

【0023】本発明の基板処理装置は、基板の上方への
移動に伴い、第1の容器の開口部を塞ぎ、基板の下方へ
の移動に伴い、塞がれた第1の容器の開口部を開放する
整流板が設けられていることが好ましい。このような整
流板が設けられていると、第2の容器での処理の際、第
1の容器と第2の容器とが完全に隔離されるため、薬液
または純水が第1の容器の中へ混入することがない。
The substrate processing apparatus of the present invention closes the opening of the first container as the substrate moves upward, and closes the opening of the first container as the substrate moves downward. It is preferable to provide a rectifying plate for opening the rectifying plate. When such a current plate is provided, the first container and the second container are completely isolated from each other during the treatment in the second container, so that the chemical solution or the pure water is removed from the first container. There is no mixing in.

【0024】本発明の基板処理装置で行われる薬液処理
としては、エッチング処理、現像処理等を挙げることが
できる。以上のようにして構成される基板処理装置を用
いた薬液処理・純水洗浄の操作手順を以下に説明する。
The chemical processing performed by the substrate processing apparatus of the present invention includes an etching processing and a developing processing. The operation procedure of chemical solution treatment and pure water cleaning using the substrate processing apparatus configured as described above will be described below.

【0025】まず、搬送装置(図示せず)により、基板
1を基板支持手段2に設置する。この時、基板1は、容
器4内に位置している。モータ10を駆動して、図1に
示すように、基板1を上昇させ、整流板11により容器
4の開口部12を塞ぐ。その結果、基板1は、容器4を
出て容器5内に位置する。
First, the substrate 1 is set on the substrate supporting means 2 by a transfer device (not shown). At this time, the substrate 1 is located in the container 4. By driving the motor 10, the substrate 1 is raised as shown in FIG. 1, and the opening 12 of the container 4 is closed by the current plate 11. As a result, the substrate 1 exits the container 4 and is located in the container 5.

【0026】次に、モータ3を駆動して基板1を回転さ
せながら、薬液吐出部6から薬液を基板1の中心に向け
て吐出する。基板1に吐出された薬液は、遠心力により
基板面に広がり、過剰な薬液は基板1の外周から振り切
られ、容器5の内壁に付着後、排出口9から回収され
る。
Next, while driving the motor 3 to rotate the substrate 1, the chemical liquid is discharged from the chemical liquid discharging section 6 toward the center of the substrate 1. The chemical solution discharged to the substrate 1 spreads on the substrate surface by centrifugal force, and excess chemical solution is shaken off from the outer periphery of the substrate 1, adheres to the inner wall of the container 5, and is collected from the outlet 9.

【0027】薬液が基板面全体に広がった後、薬液吐出
部6からの薬液の吐出を停止し、モータ3を止めて基板
1を静止した状態で、薬液処理を行う。所定時間経過
後、基板1を高い回転数で回転させ、基板1から薬液を
振り切る。
After the chemical liquid has spread over the entire surface of the substrate, the chemical liquid processing is performed while the discharge of the chemical liquid from the chemical liquid discharge section 6 is stopped, the motor 3 is stopped, and the substrate 1 is stopped. After a lapse of a predetermined time, the substrate 1 is rotated at a high rotation speed, and the chemical solution is shaken off the substrate 1.

【0028】次に、基板1の回転数を低下させ、モータ
10を駆動して、図2に示すように基板1を容器4内に
位置するように下降させる。この時、開口部12を塞い
でいた整流板11も下降するため、容器4の開口部12
は開放される。基板1を回転させながら、純水吐出部7
から基板1の中心に向けて純水を吐出して、基板面の洗
浄を行う。この際、基板面に吐出された純水は、残留し
ていた薬液とともに排出口8から回収される。基板面の
薬液が純水により充分置換された後、純水の吐出を停止
し、基板1の回転数を上昇させて、基板1を乾燥する。
ここで基板1から振り切られる純水も排出口8から回収
される。
Next, the rotation speed of the substrate 1 is reduced, and the motor 10 is driven to lower the substrate 1 so as to be positioned in the container 4 as shown in FIG. At this time, the current plate 11 closing the opening 12 also descends, so that the opening 12
Is released. While rotating the substrate 1, the pure water discharge unit 7
To discharge water toward the center of the substrate 1 to clean the substrate surface. At this time, the pure water discharged on the substrate surface is recovered from the outlet 8 together with the remaining chemical liquid. After the chemical solution on the substrate surface is sufficiently replaced with pure water, the discharge of the pure water is stopped, the rotation speed of the substrate 1 is increased, and the substrate 1 is dried.
Here, the pure water shaken off from the substrate 1 is also collected from the outlet 8.

【0029】以上説明した操作手順によると、第2の容
器内で薬液処理が行なわれ、基板に付着した薬液は、基
板を高速回転することにより、第2の容器中に振り落と
される。したがって、その後、第1の容器内で除去され
る薬液の量は、非常に少なく、純水により洗浄した廃液
は通常の酸アルカリ廃液処理設備で処理することが可能
となり、その結果、洗浄廃液中の薬液廃液量が著しく低
減される。
According to the operation procedure described above, the chemical treatment is performed in the second container, and the chemical adhering to the substrate is shaken off into the second container by rotating the substrate at a high speed. Therefore, the amount of the chemical solution removed in the first container is very small thereafter, and the waste solution washed with pure water can be treated in a usual acid-alkali waste solution treatment facility. , The amount of chemical liquid waste is significantly reduced.

【0030】なお、基板を第2の容器から第1の容器に
移動させるのに、通常、3秒程度必要である。その間、
基板は半乾燥状態で放置されるため、パターンのムラ等
が生じることがある。このような場合は、薬液の振り切
りの際に純水を吐出することにより、上述の不具合を防
ぐことができる。これにより、薬液廃液中に純水が混入
し薬液廃液の量が増加するが、薬液の振り切りの際に用
いる純水の量は、純水洗浄で用いる純水の量の1/10
程度と少ないため、特に問題とはならない。
In general, it takes about 3 seconds to move the substrate from the second container to the first container. in the meantime,
Since the substrate is left in a semi-dry state, pattern unevenness may occur. In such a case, the above-described problem can be prevented by discharging the pure water when the chemical solution is shaken off. As a result, pure water is mixed into the chemical liquid waste liquid, and the amount of the chemical liquid waste liquid increases. However, the amount of pure water used for shaking off the chemical liquid is 1/10 of the amount of pure water used for the pure water cleaning.
There is no particular problem because it is small.

【0031】また、回収される薬液廃液中の薬液濃度
は、薬液処理前とほぼ同じ値である。したがって、薬液
廃液の再利用等の省エネルギー化が可能となり、設備ラ
ンニングコストを大幅に低減することができる。
The chemical concentration in the collected chemical waste liquid is almost the same as before the chemical treatment. Therefore, it is possible to save energy such as reuse of chemical liquid waste, and it is possible to greatly reduce equipment running costs.

【0032】[0032]

【発明の効果】以上示したように、本発明の基板処理装
置によると、薬液処理を行う容器と純水洗浄を行う容器
とがそれぞれ別個に設けられ、基板の位置を上下に制御
することにより、基板がこれら容器間で移動できるよう
に装置が構成されているため、薬液処理停止後、直ちに
純水洗浄を行うことができ、かつ薬液廃液量を低減する
ことが可能となる。
As described above, according to the substrate processing apparatus of the present invention, the container for performing the chemical solution treatment and the container for performing the pure water cleaning are separately provided, and the position of the substrate is controlled up and down. Since the apparatus is configured so that the substrate can be moved between these containers, the cleaning with pure water can be performed immediately after the stoppage of the chemical solution treatment, and the amount of the chemical solution waste can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一態様に係る基板処理装置の一断面
図。
FIG. 1 is a cross-sectional view of a substrate processing apparatus according to one embodiment of the present invention.

【図2】本発明の一態様に係る基板処理装置の一断面
図。
FIG. 2 is a cross-sectional view of a substrate processing apparatus according to one embodiment of the present invention.

【図3】従来の基板処理装置の一断面図。FIG. 3 is a cross-sectional view of a conventional substrate processing apparatus.

【符号の説明】[Explanation of symbols]

1、31…基板 2、32…回転チャック 3、33…モータ 4、5、34…カップ 6、7、36、37…ノズル 8、9、38…排出口 10…モータ 11、39…整流板 12、13…開口部 14…基盤 15…モータ取付部 16…ガイド 17…ボールスクリュー 18…モータ取付板 19…管 20…回転軸 1, 31 ... substrate 2, 32 ... rotary chuck 3, 33 ... motor 4, 5, 34 ... cup 6, 7, 36, 37 ... nozzle 8, 9, 38 ... outlet 10 ... motor 11, 39 ... rectifying plate 12 Reference numerals 13, opening 14, base 15, motor mounting part 16, guide 17, ball screw 18, motor mounting plate 19, tube 20, rotating shaft

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 FI H01L 21/304 643 H01L 21/30 569C 21/306 21/306 R ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 6 Identification code FI H01L 21/304 643 H01L 21/30 569C 21/306 21/306 R

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 基板を支持する基板支持手段と、 この基板支持手段により支持された基板を回転させる基
板回転手段と、 上部に前記基板が通過する開口部を有し、前記基板の第
1の処理を行う第1の容器と、 前記第1の容器の外周を覆うように形成され、前記第1
の容器の上方において前記基板の第2の処理を行う第2
の容器と、 前記基板を、前記第1の容器内と、その上方の第2の容
器内との間を上下動させる基板上下駆動手段と、 前記基板が第1の容器内にあるときに、前記基板の上面
に第1の液を吐出する第1の吐出部と、 前記基板が第1の容器の上方の第2の容器内にあるとき
に、前記基板の上面に第2の液を吐出する第2の吐出部
と、 前記第1の容器に設けられ、第1の液を排出する第1の
排出口と、 前記第2の容器に設けられ、第2の液を排出する第2の
排出口と、を具備することを特徴とする基板処理装置。
1. A substrate supporting means for supporting a substrate, a substrate rotating means for rotating a substrate supported by the substrate supporting means, and an upper portion having an opening through which the substrate passes, A first container for performing processing, and a first container formed to cover an outer periphery of the first container;
Performing a second processing of the substrate above the container
And a substrate vertical drive means for vertically moving the substrate between the inside of the first container and the inside of the second container above the first container, and when the substrate is in the first container, A first discharge unit that discharges a first liquid onto the upper surface of the substrate; and a second liquid that discharges a second liquid onto the upper surface of the substrate when the substrate is in a second container above the first container. A second outlet provided in the first container for discharging the first liquid; and a second outlet provided in the second container for discharging the second liquid. And a discharge port.
【請求項2】 前記基板の前記開口部の上方への移動に
伴い、前記第1の容器の開口部を塞ぎ、前記基板の前記
開口部の下方への移動に伴い、前記塞がれた第1の容器
の開口部を開放する整流板を具備することを特徴とする
請求項1に記載の基板処理装置。
2. An opening of the first container is closed as the substrate moves upward of the opening, and the closed position of the substrate is moved as the substrate moves downward of the opening. The substrate processing apparatus according to claim 1, further comprising a rectifying plate that opens an opening of the first container.
【請求項3】 前記第2の容器の上部に、前記基板の外
径よりも大きな径の開口部が設けられていることを特徴
とする請求項1または2に記載の基板処理装置。
3. The substrate processing apparatus according to claim 1, wherein an opening having a diameter larger than an outer diameter of the substrate is provided in an upper portion of the second container.
JP34937197A 1997-12-18 1997-12-18 Substrate treatment apparatus Pending JPH11181584A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34937197A JPH11181584A (en) 1997-12-18 1997-12-18 Substrate treatment apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34937197A JPH11181584A (en) 1997-12-18 1997-12-18 Substrate treatment apparatus

Publications (1)

Publication Number Publication Date
JPH11181584A true JPH11181584A (en) 1999-07-06

Family

ID=18403312

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34937197A Pending JPH11181584A (en) 1997-12-18 1997-12-18 Substrate treatment apparatus

Country Status (1)

Country Link
JP (1) JPH11181584A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003045772A (en) * 2001-07-27 2003-02-14 Shibaura Mechatronics Corp Spin treatment apparatus
JP2009117762A (en) * 2007-11-09 2009-05-28 Kazuo Tanabe Etching method and apparatus for wafer edge
CN102601739A (en) * 2011-05-13 2012-07-25 上海华力微电子有限公司 Device and method for classifying and recovering waste grinding fluid and deionized water
WO2014069245A1 (en) * 2012-10-31 2014-05-08 富士フイルム株式会社 Organic treatment solution for patterning of chemically amplified resist film, container for organic treatment solution for patterning of chemically amplified resist film, and pattern formation method, electronic device manufacturing method, and electronic device using same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003045772A (en) * 2001-07-27 2003-02-14 Shibaura Mechatronics Corp Spin treatment apparatus
JP4727080B2 (en) * 2001-07-27 2011-07-20 芝浦メカトロニクス株式会社 Spin processing equipment
JP2009117762A (en) * 2007-11-09 2009-05-28 Kazuo Tanabe Etching method and apparatus for wafer edge
CN102601739A (en) * 2011-05-13 2012-07-25 上海华力微电子有限公司 Device and method for classifying and recovering waste grinding fluid and deionized water
WO2014069245A1 (en) * 2012-10-31 2014-05-08 富士フイルム株式会社 Organic treatment solution for patterning of chemically amplified resist film, container for organic treatment solution for patterning of chemically amplified resist film, and pattern formation method, electronic device manufacturing method, and electronic device using same
JP2014112176A (en) * 2012-10-31 2014-06-19 Fujifilm Corp Organic treatment solution for patterning chemically amplified resist film and housing container of organic treatment solution for patterning chemically amplified resist film, and pattern forming method, method for manufacturing electronic device, and electronic device using the treatment solution and the container
RU2615158C2 (en) * 2012-10-31 2017-04-04 Фуджифилм Корпорэйшн Container for organic treatment solution for forming structure of resistol film of chemical amplification, and method of forming structure, method of manufacturing electronic device
US10705428B2 (en) 2012-10-31 2020-07-07 Fujifilm Corporation Organic processing liquid for patterning chemical amplification resist film, container for organic processing liquid for patterning chemical amplification resist film, and pattern forming method, method of manufacturing electronic device, and electronic device using the same

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