JPH11175925A - 磁気抵抗効果型素子及び磁気記録再生装置 - Google Patents
磁気抵抗効果型素子及び磁気記録再生装置Info
- Publication number
- JPH11175925A JPH11175925A JP34103797A JP34103797A JPH11175925A JP H11175925 A JPH11175925 A JP H11175925A JP 34103797 A JP34103797 A JP 34103797A JP 34103797 A JP34103797 A JP 34103797A JP H11175925 A JPH11175925 A JP H11175925A
- Authority
- JP
- Japan
- Prior art keywords
- film
- ferromagnetic
- magnetic
- layer
- magnetoresistive element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Magnetic Heads (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34103797A JPH11175925A (ja) | 1997-12-11 | 1997-12-11 | 磁気抵抗効果型素子及び磁気記録再生装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34103797A JPH11175925A (ja) | 1997-12-11 | 1997-12-11 | 磁気抵抗効果型素子及び磁気記録再生装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11175925A true JPH11175925A (ja) | 1999-07-02 |
| JPH11175925A5 JPH11175925A5 (enExample) | 2005-07-28 |
Family
ID=18342656
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34103797A Pending JPH11175925A (ja) | 1997-12-11 | 1997-12-11 | 磁気抵抗効果型素子及び磁気記録再生装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11175925A (enExample) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6404672B2 (en) | 2000-01-07 | 2002-06-11 | Fujitsu Limited | Magnetic element and magnetic memory device |
| US6661624B1 (en) | 1999-09-28 | 2003-12-09 | Fujitsu Limited | Spin-valve magnetoresistive device having a layer for canceling a leakage magnetic field |
| US6762915B2 (en) * | 2001-09-05 | 2004-07-13 | Seagate Technology Llc | Magnetoresistive sensor with oversized pinned layer |
| US6995960B2 (en) | 2000-09-21 | 2006-02-07 | Fujitsu Limited | Spin valve magnetoresistive sensor having CPP structure |
| US7092223B2 (en) | 2001-05-02 | 2006-08-15 | Fujitsu Limited | Current-perpendicular-to-the-plane structure magnetoresistive element and method of making same |
| US7835116B2 (en) * | 2005-09-09 | 2010-11-16 | Seagate Technology Llc | Magnetoresistive stack with enhanced pinned layer |
-
1997
- 1997-12-11 JP JP34103797A patent/JPH11175925A/ja active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6661624B1 (en) | 1999-09-28 | 2003-12-09 | Fujitsu Limited | Spin-valve magnetoresistive device having a layer for canceling a leakage magnetic field |
| US6404672B2 (en) | 2000-01-07 | 2002-06-11 | Fujitsu Limited | Magnetic element and magnetic memory device |
| US6995960B2 (en) | 2000-09-21 | 2006-02-07 | Fujitsu Limited | Spin valve magnetoresistive sensor having CPP structure |
| US7116533B2 (en) | 2000-09-21 | 2006-10-03 | Fujitsu Limited | Magnetoresistive sensor |
| US7092223B2 (en) | 2001-05-02 | 2006-08-15 | Fujitsu Limited | Current-perpendicular-to-the-plane structure magnetoresistive element and method of making same |
| US7377026B2 (en) | 2001-05-02 | 2008-05-27 | Fujitsu Limited | Method of making current-perpendicular-to-the-plane structure magnetoresistive element |
| US6762915B2 (en) * | 2001-09-05 | 2004-07-13 | Seagate Technology Llc | Magnetoresistive sensor with oversized pinned layer |
| US7835116B2 (en) * | 2005-09-09 | 2010-11-16 | Seagate Technology Llc | Magnetoresistive stack with enhanced pinned layer |
| US8184409B2 (en) | 2005-09-09 | 2012-05-22 | Seagate Technology Llc | Magnetoresistive device with enhanced pinned layer |
| US8520344B2 (en) | 2005-09-09 | 2013-08-27 | Seagate Technology Llc | Magnetoresistive device with enhanced pinned layer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6985338B2 (en) | Insulative in-stack hard bias for GMR sensor stabilization | |
| US6023395A (en) | Magnetic tunnel junction magnetoresistive sensor with in-stack biasing | |
| US5901018A (en) | Magnetic tunnel junction magnetoresistive read head with sensing layer as rear flux guide | |
| JP2592216B2 (ja) | 二重スピン・バルブ磁気抵抗センサ | |
| US6005753A (en) | Magnetic tunnel junction magnetoresistive read head with longitudinal and transverse bias | |
| US5898547A (en) | Magnetic tunnel junction magnetoresistive read head with sensing layer as flux guide | |
| US7599151B2 (en) | Magnetic head with laminated side shields | |
| US6903906B2 (en) | Magnetic head with a lamination stack to control the magnetic domain | |
| US6657826B2 (en) | Magnetoresistive device and method of manufacturing same, thin-film magnetic head and method of manufacturing same, head gimbal assembly and hard disk drive | |
| JP2001068760A (ja) | 強磁性トンネル接合素子 | |
| JP3263018B2 (ja) | 磁気抵抗効果素子およびその製造方法 | |
| JP2777548B2 (ja) | エッジ・バイアス式磁気抵抗センサ | |
| US7221546B2 (en) | Thin film magnetic head, head gimbal assembly, and hard disk drive | |
| US6483674B1 (en) | Spin valve head, production process thereof and magnetic disk device | |
| US7193822B2 (en) | Thin film magnetic head, head gimbal assembly, and hard disk drive | |
| JPH07296340A (ja) | 磁気抵抗効果素子およびその素子を使用した薄膜磁気ヘッド | |
| JP3541245B2 (ja) | 磁気ヘッド及びそれを有する磁気記憶装置 | |
| JPH11175925A (ja) | 磁気抵抗効果型素子及び磁気記録再生装置 | |
| US6927950B2 (en) | Thin-film magnetic head and method of manufacturing same, head gimbal assembly, and hard disk drive | |
| JP2001056908A (ja) | 磁気抵抗効果素子、磁気抵抗効果ヘッド及び磁気抵抗検出システム並びに磁気記憶システム | |
| JP2000011331A (ja) | 磁気抵抗効果素子及び薄膜磁気ヘッド | |
| JP2897725B2 (ja) | 磁気抵抗効果型ヘッド | |
| US7372675B2 (en) | Magnetoresistive element, thin-film magnetic head, head gimbal assembly, head arm assembly and magnetic disk drive | |
| JP3779666B2 (ja) | 磁気再生ヘッド及び磁気再生装置 | |
| JPH10222817A (ja) | 磁気抵抗センサ |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Effective date: 20041208 Free format text: JAPANESE INTERMEDIATE CODE: A523 |
|
| A621 | Written request for application examination |
Effective date: 20041208 Free format text: JAPANESE INTERMEDIATE CODE: A621 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20041210 |
|
| RD02 | Notification of acceptance of power of attorney |
Effective date: 20060510 Free format text: JAPANESE INTERMEDIATE CODE: A7422 |
|
| RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20060510 |
|
| A977 | Report on retrieval |
Effective date: 20060525 Free format text: JAPANESE INTERMEDIATE CODE: A971007 |
|
| A131 | Notification of reasons for refusal |
Effective date: 20060530 Free format text: JAPANESE INTERMEDIATE CODE: A131 |
|
| A02 | Decision of refusal |
Effective date: 20061003 Free format text: JAPANESE INTERMEDIATE CODE: A02 |