JPH11175925A - 磁気抵抗効果型素子及び磁気記録再生装置 - Google Patents

磁気抵抗効果型素子及び磁気記録再生装置

Info

Publication number
JPH11175925A
JPH11175925A JP34103797A JP34103797A JPH11175925A JP H11175925 A JPH11175925 A JP H11175925A JP 34103797 A JP34103797 A JP 34103797A JP 34103797 A JP34103797 A JP 34103797A JP H11175925 A JPH11175925 A JP H11175925A
Authority
JP
Japan
Prior art keywords
film
ferromagnetic
magnetic
layer
magnetoresistive element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP34103797A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11175925A5 (enExample
Inventor
Yoshiaki Kawato
良昭 川戸
Matahiro Komuro
又洋 小室
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP34103797A priority Critical patent/JPH11175925A/ja
Publication of JPH11175925A publication Critical patent/JPH11175925A/ja
Publication of JPH11175925A5 publication Critical patent/JPH11175925A5/ja
Pending legal-status Critical Current

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  • Magnetic Heads (AREA)
JP34103797A 1997-12-11 1997-12-11 磁気抵抗効果型素子及び磁気記録再生装置 Pending JPH11175925A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34103797A JPH11175925A (ja) 1997-12-11 1997-12-11 磁気抵抗効果型素子及び磁気記録再生装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34103797A JPH11175925A (ja) 1997-12-11 1997-12-11 磁気抵抗効果型素子及び磁気記録再生装置

Publications (2)

Publication Number Publication Date
JPH11175925A true JPH11175925A (ja) 1999-07-02
JPH11175925A5 JPH11175925A5 (enExample) 2005-07-28

Family

ID=18342656

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34103797A Pending JPH11175925A (ja) 1997-12-11 1997-12-11 磁気抵抗効果型素子及び磁気記録再生装置

Country Status (1)

Country Link
JP (1) JPH11175925A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6404672B2 (en) 2000-01-07 2002-06-11 Fujitsu Limited Magnetic element and magnetic memory device
US6661624B1 (en) 1999-09-28 2003-12-09 Fujitsu Limited Spin-valve magnetoresistive device having a layer for canceling a leakage magnetic field
US6762915B2 (en) * 2001-09-05 2004-07-13 Seagate Technology Llc Magnetoresistive sensor with oversized pinned layer
US6995960B2 (en) 2000-09-21 2006-02-07 Fujitsu Limited Spin valve magnetoresistive sensor having CPP structure
US7092223B2 (en) 2001-05-02 2006-08-15 Fujitsu Limited Current-perpendicular-to-the-plane structure magnetoresistive element and method of making same
US7835116B2 (en) * 2005-09-09 2010-11-16 Seagate Technology Llc Magnetoresistive stack with enhanced pinned layer

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6661624B1 (en) 1999-09-28 2003-12-09 Fujitsu Limited Spin-valve magnetoresistive device having a layer for canceling a leakage magnetic field
US6404672B2 (en) 2000-01-07 2002-06-11 Fujitsu Limited Magnetic element and magnetic memory device
US6995960B2 (en) 2000-09-21 2006-02-07 Fujitsu Limited Spin valve magnetoresistive sensor having CPP structure
US7116533B2 (en) 2000-09-21 2006-10-03 Fujitsu Limited Magnetoresistive sensor
US7092223B2 (en) 2001-05-02 2006-08-15 Fujitsu Limited Current-perpendicular-to-the-plane structure magnetoresistive element and method of making same
US7377026B2 (en) 2001-05-02 2008-05-27 Fujitsu Limited Method of making current-perpendicular-to-the-plane structure magnetoresistive element
US6762915B2 (en) * 2001-09-05 2004-07-13 Seagate Technology Llc Magnetoresistive sensor with oversized pinned layer
US7835116B2 (en) * 2005-09-09 2010-11-16 Seagate Technology Llc Magnetoresistive stack with enhanced pinned layer
US8184409B2 (en) 2005-09-09 2012-05-22 Seagate Technology Llc Magnetoresistive device with enhanced pinned layer
US8520344B2 (en) 2005-09-09 2013-08-27 Seagate Technology Llc Magnetoresistive device with enhanced pinned layer

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