JPH11174425A - Manufacturing method for semiconductor element array substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor element array substrate to be used for a liquid crystal display panel having the size for a large-sized monitor. SOLUTION: A roughly cylindrical or cylindrical single crystal ingot 1 is formed and an elliptic substrate 11 in which a prescribed crystal surface is made the surface is produced by cutting the single crystal ingot 1 with a plane which does not orthogonally cross with an axial center X of the ingot 1. Then, semiconductor elements to be constituted of an array part 3, a scanning circuit part 4 and a signal circuit part 5 are formed on the elliptic substrate 11.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor element array substrate used for a reflection type liquid crystal display panel of a liquid crystal display device.

[0002]

2. Description of the Related Art Conventionally, a liquid crystal display device has been widely used as a thin and low power consumption image display device for information equipment such as OA equipment and a television, and a liquid crystal display panel constituting a display screen of the liquid crystal display device has been widely used. Has a semiconductor element array substrate for driving the liquid crystal sandwiched therein.

[0003] Among such liquid crystal display panels, a reflection type liquid crystal display panel is being studied as an image display device capable of low power consumption because it does not require a light source, particularly for use in portable equipment.

As a method of manufacturing a semiconductor element array substrate used for a reflection type liquid crystal display panel, the Japan Society for the Promotion of Science No. 14
The liquid crystal device handbook (published by Nikkan Kogyo Shimbun, 1989), pages 228 to 232, edited by 2 committees, is known.

A conventional semiconductor device array substrate is manufactured as shown in FIG. As shown in FIG. 4A, a substantially columnar single crystal ingot 1 made of silicon is formed. A circular wafer is cut out from the single crystal ingot 1 to produce a circular substrate 2.

After polishing and cleaning the circular substrate 2, using a MOS semiconductor technology, as shown in FIG. 4B, a plurality of active elements (such as thin film transistors) as semiconductor elements for driving liquid crystal are arranged to form a liquid crystal display panel. An array unit 3 serving as a display area, and a scanning circuit unit 4 and a signal circuit unit 5 electrically connected to the active elements and serving as a drive circuit for supplying a drive signal are formed on the circular substrate 2;
An active element array substrate is obtained.

[0007] As described above, using the circular substrate 2 cut out in a circular shape, a MOS process which is a normal silicon semiconductor process is performed.
By forming an active element array having a drive circuit by semiconductor technology, an active element array substrate can be easily obtained with a high yield. Here, the circular shape of the substrate is exclusively used in the production of silicon semiconductors because of the ease of handling in a semiconductor process such as resist coating and the superiority of the number of substrates to be removed from an ingot.

[0008]

However, according to the conventional method for manufacturing a semiconductor element array substrate, the size of the semiconductor element array substrate is reduced to a value smaller than the diameter D of the circular substrate 2 as shown in FIG. Due to the limitation, the size of the liquid crystal display panel is 20 mm, which is the diameter of the current circular silicon wafer.
There is a problem that the distance is about 3 mm (8 inches) or less.

Further, even a next-generation silicon wafer, which has recently become a hot topic, has a diameter of 300 mm, which is the minimum required for a monitor-sized liquid crystal display panel.
mm (13 inches) is not possible.

An object of the present invention is to provide a method for manufacturing a semiconductor element array substrate used for a large monitor size liquid crystal display panel.

[0011]

According to a method of manufacturing a semiconductor element array substrate of the present invention, a substantially single-crystal or cylindrical single-crystal ingot is formed by pulling in a predetermined direction, and an axis in the pull-up direction of the single-crystal ingot is formed. The single crystal ingot is cut out from a plane not orthogonal to the center to produce an elliptical substrate having a predetermined crystal plane as a surface, and a semiconductor element is formed on the elliptical substrate.

According to the present invention, a semiconductor element array substrate used for a large monitor size liquid crystal display panel can be obtained.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention according to claim 1 of the present invention is directed to a method of manufacturing the above-mentioned substrate used for a liquid crystal display panel in which liquid crystal is filled between the substrates. Form an ingot, cut out the single crystal ingot in a plane that is not orthogonal to the axis of the single crystal ingot to produce an elliptical substrate having a predetermined crystal plane as a surface,
This is a method for manufacturing a semiconductor element array substrate in which semiconductor elements are formed on the elliptical substrate, and a semiconductor element array substrate having a size larger than the diameter of a single crystal ingot can be obtained.

According to a second aspect of the present invention, when manufacturing the substrate used for a liquid crystal display panel in which liquid crystal is filled between the substrates, a single crystal ingot having a substantially cylindrical or cylindrical outer shape is formed. Cut out the single crystal ingot on a surface that is not orthogonal to the axis of the crystal ingot to produce an elliptical substrate having a predetermined crystal surface as a surface, and cut the elliptical substrate into a target shape to form a processed substrate, A method of manufacturing a semiconductor element array substrate in which a semiconductor element is formed on the processing substrate, a semiconductor element array substrate having a size larger than the diameter of a single crystal ingot is obtained, and handling in a semiconductor process is facilitated. can do.

According to a third aspect of the present invention, there is provided the method of manufacturing a semiconductor element array substrate according to the first or second aspect, wherein the single crystal ingot is formed of silicon.
According to a fourth aspect of the present invention, the surface of the elliptical substrate is made of a single crystal silicon crystal plane ( 100) The method according to claim 3, wherein a semiconductor element having good characteristics can be formed.

According to a fifth aspect of the present invention, there is provided a semiconductor device comprising:
A method of manufacturing a semiconductor element array substrate according to any one of claims 1 to 4, wherein the semiconductor element array is a semiconductor element array including an array section, a scanning circuit section, and a signal circuit section.

Hereinafter, a method for manufacturing a semiconductor element array substrate according to the present invention will be described based on specific embodiments. (Embodiment 1) A semiconductor element array substrate according to Embodiment 1 of the present invention is manufactured according to a manufacturing process as shown in FIG.

The single crystal ingot 1 made of substantially cylindrical or cylindrical silicon is placed in the crystal plane direction (11
1) and formed by pulling up. The single crystal ingot 1 is cut out on a plane that is not orthogonal to the axis X that is the pulling direction of the single crystal ingot 1, and as shown in FIG. 1A, a crystal plane (100) as a predetermined crystal plane is used as a surface. An elliptical substrate 11 is manufactured.

After polishing and cleaning the elliptical substrate 11, FIG. 1 (b)
As shown in FIG. 1, an array section 3 in which a plurality of active elements as semiconductor elements for driving liquid crystal are arranged so as to have a maximum screen size that can be formed on an elliptical substrate 11 using MOS semiconductor technology, The scanning circuit section 4 and the signal circuit section 5 electrically connected to the active elements, respectively, are formed on the elliptical substrate 11 to obtain an active element array substrate.

As described above, a semiconductor element array substrate having a size larger than the diameter of the single crystal ingot can be obtained. Specifically, in the case of a normal liquid crystal display panel in which the aspect ratio of the display screen is 3 to 4, the single crystal ingot 1
An active element array substrate having a size about 1.2 times larger than the diameter of the active element array can be obtained. In the case of a wide screen having an aspect ratio of 9 to 16, an active element array substrate having a size about 1.3 times larger than the diameter of a single crystal ingot can be obtained.

(Embodiment 2) A semiconductor element array substrate according to Embodiment 2 of the present invention has a plurality of semiconductor element arrays formed on an elliptical substrate 11, as shown in FIG.

More specifically, a second array section 3a, a second scanning circuit section 4a, and a second signal circuit section 5a are formed in a surplus portion in the major axis direction of the semiconductor element array substrate of the first embodiment. Thus, a semiconductor element array smaller than the semiconductor element array of the first embodiment is formed.

An elliptical substrate 11 is manufactured and polished and cleaned in the same manner as in the first embodiment. Using the MOS semiconductor technology, an active element array composed of an array unit 3, a scanning circuit unit 4, and a signal circuit unit 5 having the maximum screen size that can be formed on the elliptical substrate 11 is placed at the center of the elliptical substrate 11. In addition, a small-sized active element array composed of the second array section 3a, the second scanning circuit section 4a, and the second signal circuit section 5a is formed in two places in a surplus portion in the major axis direction of the elliptical substrate 11. Formed.

As described above, the entire surface of the elliptical substrate 11 can be effectively used by forming the semiconductor element array corresponding to the surplus portion on the extra portion of the elliptical substrate 11.

Further, in the second embodiment, a total of three surfaces are formed on the elliptical substrate 11, one surface of the semiconductor element array having the maximum screen size and two surfaces of the small semiconductor element array on both sides thereof. Any combination of chamfers that can effectively use the entire surface of the elliptical substrate 11 may be used, and a chamfer configuration in which only a small number of semiconductor element arrays are formed may be used.

(Embodiment 3) As shown in FIG. 3, a semiconductor element array substrate according to Embodiment 3 of the present invention is formed by removing an end of the elliptical substrate 11 of Embodiment 1 in the major axis direction. A semiconductor element array including an array section 3, a scanning circuit section 4, and a signal circuit section 5 is formed on a substrate 11a.

As shown in FIG. 3A, an elliptical substrate 11 is manufactured from a single crystal ingot 1 as in the first embodiment. As shown in FIG. 3B, an end portion 11b which is a portion where the liquid crystal display panel in the major axis direction of the elliptical substrate 11 is not formed.
Is deleted, and the processed substrate 11a is manufactured. Next, after the processing substrate 11a is polished and cleaned, as shown in FIG. 3C, an array section in which a plurality of active elements as semiconductor elements are arranged for driving a liquid crystal using the MOS semiconductor technology on the processing substrate 11a. 3 and the scanning circuit section 4 and the signal circuit section 5 are formed to manufacture an active element array substrate.

As described above, in the case of a normal liquid crystal display panel in which the aspect ratio of the display screen is 3 to 4, the size is about 1.2 times larger than the diameter of the single crystal ingot (the aspect ratio is 9:16). In the case of the wide screen, an active element array substrate having a size about 1.3 times larger than the diameter of the single crystal ingot can be obtained, and the symmetry with respect to an arbitrary axis passing through the center of the processing substrate 11a is elliptical. Since the number is increased as compared with the shaped substrate 11, handling in many steps of a semiconductor process represented by spin coating of a resist can be facilitated.

Further, in the third embodiment, the processing substrate is one chamfer having the maximum screen size that can be formed on the elliptical substrate. If unnecessary end portions are removed from the viewpoint of the above, handling in a semiconductor process can be facilitated.

In each of the embodiments, the pulling direction of the single crystal ingot is set to the (111) direction, and an elliptical substrate having a crystal plane (100) is cut out. The elliptical substrate is required for a desired liquid crystal display panel. Any elliptical shape may be used as long as the characteristics of the semiconductor element can be obtained.

In each of the embodiments, the semiconductor element is formed by using the MOS semiconductor technology. However, even in the case of using the bipolar semiconductor technology or the silicon semiconductor technology in which these are mixed, a large monitor size is required. A semiconductor element array substrate can be obtained.

[0032]

As described above, according to the method of manufacturing a semiconductor element array substrate of the present invention, a substantially cylindrical or columnar single crystal ingot is formed by pulling in a predetermined direction, and the single crystal ingot is pulled in the pulling direction of the single crystal ingot. The single crystal ingot is cut out on a plane that is not perpendicular to a certain axis to produce an elliptical substrate having a predetermined crystal plane as a surface, and a semiconductor element is formed on the elliptical substrate to obtain a single crystal as in the conventional case. Without being restricted to being able to manufacture only semiconductor element array substrates of a size less than the diameter size of the crystal ingot,
A semiconductor element array substrate having a size larger than the diameter of the single crystal ingot can be obtained, and a large monitor size liquid crystal display panel can be realized by using the semiconductor element array substrate.

Further, by removing unnecessary ends of the elliptical substrate on which the semiconductor element array is not formed to produce a processed substrate, the same effect as described above can be obtained and the handling in the semiconductor process can be improved. Can be easier.

[Brief description of the drawings]

FIG. 1 is a manufacturing process diagram of a semiconductor element array substrate according to a first embodiment of the present invention.

FIG. 2 is a plan view of a semiconductor element array substrate according to a second embodiment of the present invention.

FIG. 3 is a manufacturing process diagram of a semiconductor element array substrate according to a third embodiment of the present invention.

FIG. 4 is a manufacturing process diagram of a conventional active element array substrate.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Single crystal ingot 3 Array part 3a Second array part 4 Scanning circuit part 4a Second scanning circuit part 5 Signal circuit part 5a Second signal circuit part 11 Elliptical substrate 11a Processing substrate 11b End part X Single crystal ingot Shaft center

Claims (5)

[Claims] In manufacturing a substrate used for a liquid crystal display panel in which liquid crystal is filled between substrates, a single crystal ingot having a substantially cylindrical or cylindrical outer shape is formed, and the axis is orthogonal to the axis of the single crystal ingot. A method for manufacturing a semiconductor element array substrate, wherein the single crystal ingot is cut out on a surface not to be formed, an elliptical substrate having a predetermined crystal plane as a surface is produced, and a semiconductor element is formed on the elliptical substrate. 2. A method for manufacturing a substrate for use in a liquid crystal display panel in which liquid crystal is filled between substrates, the method comprising forming a substantially single-crystal or cylindrical single-crystal ingot having an outer shape perpendicular to an axis of the single-crystal ingot. Cutting out the single crystal ingot on a surface not to be formed to produce an elliptical substrate having a predetermined crystal surface as a surface, cutting the elliptical substrate into a target shape to form a processed substrate, and forming a semiconductor on the processed substrate A method for manufacturing a semiconductor element array substrate for forming an element. 3. The method for manufacturing a semiconductor element array substrate according to claim 1, wherein the single crystal ingot is formed of silicon. 4. The method according to claim 1, wherein the surface of the elliptical substrate is formed by a single crystal silicon The method for manufacturing a semiconductor element array substrate according to claim 3, wherein 100). 5. The method for manufacturing a semiconductor element array substrate according to claim 1, wherein the semiconductor element is a semiconductor element array including an array section, a scanning circuit section, and a signal circuit section.