JPH1117053A - Structure and method for mounting semiconductor device - Google Patents

Structure and method for mounting semiconductor device

Info

Publication number
JPH1117053A
JPH1117053A JP16856697A JP16856697A JPH1117053A JP H1117053 A JPH1117053 A JP H1117053A JP 16856697 A JP16856697 A JP 16856697A JP 16856697 A JP16856697 A JP 16856697A JP H1117053 A JPH1117053 A JP H1117053A
Authority
JP
Japan
Prior art keywords
mounting
substrate
semiconductor device
connection
resin material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16856697A
Other languages
Japanese (ja)
Inventor
Michio Horiuchi
道夫 堀内
Shigeji Muramatsu
茂次 村松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP16856697A priority Critical patent/JPH1117053A/en
Publication of JPH1117053A publication Critical patent/JPH1117053A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341Surface mounted components
    • H05K3/3431Leadless components
    • H05K3/3436Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457Solder materials or compositions; Methods of application thereof
    • H05K3/3478Applying solder preforms; Transferring prefabricated solder patterns

Abstract

PROBLEM TO BE SOLVED: To modify thermal stress generated between a semiconductor device and a mounting board at the time of mounting, by electrically connecting a connecting terminal with a connecting pad by a connecting metal and providing an electrically insulating resin material between the mounting plane of the board and the mounting plane of the mounting board. SOLUTION: On the mounting plane of the board 10 of a semiconductor device 5, many connecting terminals 16 are arranged in array. On the plane of the mounting board 30 for mounting the semiconductor device 5, a connecting pad 32 is formed in the same flat plane arrangement as that of the connecting terminal 16. A connecting wiring body 20 is provided between the mounting plane of the board 10 and the mounting board 30, by forming an electrically insulating resin material 22 as a film and arranging a connecting metal 24, which is to be an electrical continuity part, by penetrating the film in the thickness direction in the same flat plane arrangement as that of the connecting terminal 16 of the board 10. The semiconductor device 5 is bonded to the mounting board 30 through the connecting wiring body 20 to be electrically connected.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は半導体装置の実装構
造及び半導体装置の実装方法に関するものであり、とく
に表面実装用の半導体装置の実装構造及び実装方法に関
するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device mounting structure and a semiconductor device mounting method, and more particularly to a semiconductor device mounting structure and a surface mounting method for surface mounting.

【0002】[0002]

【従来の技術】最近の半導体装置では多ピンの半導体チ
ップを搭載するため、BGA(BallGrid Array)あるい
はLGA(Land Grid Array)といったパッケージの実装
面全体を外部接続端子を配置するスペースとし、実装面
に外部接続端子をアレイ状に配列して多数個の外部接続
端子を配置できるようにした製品が使用されるようにな
ってきた。BGAおよびLGAはともに表面実装用の半
導体装置であり、BGAははんだボールを介して実装
し、LGAはソケットあるいは接続パッドにはんだペー
ストを塗布して実装する。
2. Description of the Related Art In recent semiconductor devices, since a multi-pin semiconductor chip is mounted, the entire mounting surface of a package such as a BGA (Ball Grid Array) or LGA (Land Grid Array) is used as a space for arranging external connection terminals. In recent years, products have been used in which external connection terminals are arranged in an array so that a large number of external connection terminals can be arranged. The BGA and the LGA are both semiconductor devices for surface mounting. The BGA is mounted via solder balls, and the LGA is mounted by applying a solder paste to a socket or a connection pad.

【0003】[0003]

【発明が解決しようとする課題】ところで、表面実装型
の半導体パッケージではこれらを実装した際に、実装基
板と半導体パッケージとの間で生じる熱応力が電子装置
の信頼性に大きく影響するという問題がある。とくに、
上記のように実装面のほぼ全面に外部接続端子を配置し
た製品では、パッケージが基板のほぼ全域で実装基板に
接合されるから、基板と実装基板との熱膨張係数の差に
よる熱応力が半導体パッケージと実装基板との接合部に
集中しやすくなり、熱膨張係数の差がそれほど大きくな
い場合でも熱応力によって接合部が破壊されるといった
問題が生じやすくなる。
By the way, in the case of surface-mount type semiconductor packages, there is a problem that when they are mounted, the thermal stress generated between the mounting substrate and the semiconductor package greatly affects the reliability of the electronic device. is there. In particular,
In products with external connection terminals arranged almost all over the mounting surface as described above, the package is bonded to the mounting substrate over substantially the entire area of the substrate, so the thermal stress due to the difference in the coefficient of thermal expansion between the substrate and the mounting substrate is reduced by the semiconductor. It tends to concentrate on the joint between the package and the mounting board, and even when the difference in thermal expansion coefficient is not so large, a problem that the joint is broken by thermal stress easily occurs.

【0004】本発明はこのような表面実装型の半導体装
置で基板の実装面にアレイ状に接続端子を配列した半導
体装置を実装基板に実装する構造に関するもので、とく
にはんだボールを介さずに実装する構造であって、実装
時に半導体装置と実装基板との間で生じる熱応力を緩和
し、これによって接合部が破損したりすることを防止
し、信頼性の高い電子装置として提供することを可能と
する半導体装置の実装構造及び半導体装置の実装方法を
提供することを目的とする。
The present invention relates to a structure for mounting a semiconductor device in which connection terminals are arranged in an array on a mounting surface of a substrate in such a surface-mount type semiconductor device, and particularly to a mounting method without a solder ball therebetween. The structure reduces the thermal stress generated between the semiconductor device and the mounting board during mounting, thereby preventing the joint from being damaged and providing a highly reliable electronic device. It is an object of the present invention to provide a semiconductor device mounting structure and a semiconductor device mounting method.

【0005】[0005]

【課題を解決するための手段】本発明は上記目的を達成
するため次の構成を備える。すなわち、基板の実装面に
多数個の接続端子が配置された半導体装置が、前記接続
端子と同一の平面配置で接続パッドが形成された実装基
板に、前記実装面と前記実装基板との間に接続配線体を
介して表面実装されて成る半導体装置の実装構造であっ
て、前記接続配線体が、前記接続端子と同一の平面配置
で配列された、前記接続端子と前記接続パッドとに溶着
されて前記接続端子と前記接続パッドとを電気的に接続
する接合用金属と、前記基板の実装面と前記実装基板の
搭載面との間に介在する電気的絶縁性を有する樹脂材と
から成ることを特徴とする。また、前記樹脂材が、前記
基板の実装面に一体に接着されており、前記実装基板の
搭載面には接着していないことを特徴とする。また、前
記樹脂材が、前記基板の実装面および前記実装基板の搭
載面には接着していないことを特徴とする。また、前記
接合用金属が、少なくとも前記接続端子の配置位置を含
む基板の実装面の全体に対応してアレイ状に配置された
ことを特徴とする。接続端子に接合されない接合用金属
は半導体装置から実装基板へ熱放散させる作用により熱
放散性の良好な半導体装置の実装構造を提供できる。
The present invention has the following arrangement to achieve the above object. That is, a semiconductor device in which a large number of connection terminals are arranged on a mounting surface of a substrate is mounted on a mounting substrate on which connection pads are formed in the same plane arrangement as the connection terminals, and between the mounting surface and the mounting substrate. A mounting structure of a semiconductor device which is surface-mounted via a connection wiring body, wherein the connection wiring body is welded to the connection terminal and the connection pad, which are arranged in the same planar arrangement as the connection terminal. A connection metal for electrically connecting the connection terminal and the connection pad, and a resin material having electrical insulation interposed between a mounting surface of the substrate and a mounting surface of the mounting substrate. It is characterized by. Further, the resin material is integrally bonded to a mounting surface of the substrate, and is not bonded to a mounting surface of the mounting substrate. Further, the resin material is not bonded to the mounting surface of the substrate and the mounting surface of the mounting substrate. Further, the bonding metal is arranged in an array so as to correspond to the entire mounting surface of the substrate including at least the arrangement position of the connection terminal. The bonding metal that is not bonded to the connection terminal dissipates heat from the semiconductor device to the mounting substrate, thereby providing a semiconductor device mounting structure with good heat dissipation.

【0006】また、基板の実装面に多数個の接続端子が
配置された半導体装置を、前記接続端子と同一の平面配
置で接続パッドが形成された実装基板に、前記実装面と
前記実装基板との間に接続配線体を介して表面実装する
半導体装置の実装方法であって、フィルム状に形成され
た電気的絶縁性を有する樹脂材を厚さ方向に貫通して前
記接続端子と同一の平面配置で接合用金属が配置された
接続配線体を、前記基板および実装基板と位置合わせし
て前記基板の実装面と前記実装基板との間で挟圧支持
し、前記接合用金属が溶融する温度にまで加熱して、接
合用金属を前記接続端子及び前記接続パッドに溶着する
ことを特徴とする。また、前記接続配線体として、前記
樹脂材が前記基板および実装基板に対して接着性を有し
ないものを用い、前記基板の実装面に前記接続端子の配
置位置を除いてソルダレジスト等の接着性を有する樹脂
材を塗着した後、前記接続配線体を、前記基板および実
装基板と位置合わせして前記基板の実装面と前記実装基
板との間で挟圧支持し、前記接合用金属が溶融する温度
にまで加熱して、接合用金属を前記接続端子及び前記接
続パッドに溶着し、前記接着性を有する樹脂材をキュア
することにより、前記基板に前記接続配線体の樹脂材を
一体に接着することを特徴とする。また、前記接続配線
体として、前記樹脂材が前記基板および実装基板に対し
て接着性を有しないものを用いることを特徴とする。
Further, a semiconductor device having a large number of connection terminals disposed on a mounting surface of a substrate is mounted on a mounting substrate having connection pads formed in the same planar arrangement as the connection terminals. A method for mounting a semiconductor device which is surface-mounted via a connection wiring body between the connection terminals, wherein the resin terminal having electrical insulation formed in a film shape is penetrated in a thickness direction and is flush with the connection terminal. The connection wiring body in which the joining metal is arranged is aligned with the substrate and the mounting board, and is squeezed and supported between the mounting surface of the substrate and the mounting board, and the temperature at which the joining metal melts And welding the joining metal to the connection terminals and the connection pads. In addition, as the connection wiring body, a material in which the resin material does not have an adhesive property with respect to the board and the mounting board is used, and an adhesive property such as a solder resist is attached to the mounting surface of the board except for a position where the connection terminal is arranged. After applying a resin material having the following, the connection wiring body is aligned with the substrate and the mounting substrate, and squeezed and supported between the mounting surface of the substrate and the mounting substrate, so that the bonding metal is melted. To a predetermined temperature, the joining metal is welded to the connection terminals and the connection pads, and the adhesive resin material is cured, whereby the resin material of the connection wiring body is integrally bonded to the substrate. It is characterized by doing. Further, the connection wiring body is made of a material in which the resin material has no adhesiveness to the substrate and the mounting substrate.

【0007】[0007]

【発明の実施の形態】以下、本発明の好適な実施形態に
ついて添付図面とともに詳細に説明する。図1は本発明
に係る半導体装置の実装構造を示す説明図である。図で
10は半導体装置5の基板であり、12は基板10に搭
載した半導体チップを樹脂封止した樹脂封止部である。
なお、半導体チップを搭載する基板10には樹脂基板、
セラミック基板等が使用でき、基板10の材質等がとく
に限定されるものではない。20は半導体装置5を実装
基板30に実装するための接続配線体である。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is an explanatory view showing a mounting structure of a semiconductor device according to the present invention. In the figure, reference numeral 10 denotes a substrate of the semiconductor device 5, and reference numeral 12 denotes a resin sealing portion in which a semiconductor chip mounted on the substrate 10 is resin-sealed.
The substrate 10 on which the semiconductor chip is mounted is a resin substrate,
A ceramic substrate or the like can be used, and the material and the like of the substrate 10 are not particularly limited. Reference numeral 20 denotes a connection wiring body for mounting the semiconductor device 5 on the mounting board 30.

【0008】図2に接続配線体20を介して半導体装置
を実装基板30に実装する方法を示す。図2(a) は半導
体装置5と実装基板30および接続配線体20の構成を
拡大して示す。半導体装置5の基板10の実装面にはア
レイ状に多数個の接続端子16が配置されている。ま
た、実装基板30の半導体装置5の搭載面には接続端子
16と電気的に接続される接続パッド32が接続端子1
6と同一の平面配置で形成されている。34は実装基板
30の表面を保護するソルダレジスト等の保護被膜であ
る。
FIG. 2 shows a method of mounting a semiconductor device on a mounting board 30 via a connection wiring body 20. FIG. 2A is an enlarged view of the configuration of the semiconductor device 5, the mounting substrate 30, and the connection wiring body 20. A large number of connection terminals 16 are arranged in an array on the mounting surface of the substrate 10 of the semiconductor device 5. A connection pad 32 electrically connected to the connection terminal 16 is provided on the mounting surface of the semiconductor device 5 of the mounting substrate 30.
6 are formed in the same planar arrangement. Reference numeral 34 denotes a protective film such as a solder resist for protecting the surface of the mounting board 30.

【0009】接続配線体20は基板10の実装面と実装
基板30との間に介在し、半導体装置5を実装基板30
に接合するとともに、半導体装置5を実装基板30に電
気的に接続する作用をなす。実施形態の接続配線体20
は電気的絶縁性を有する樹脂材22を基材としてフィル
ム状に形成され、基板10の接続端子16と同一の平面
配置でフィルムを厚さ方向に貫通して電気的導通部とな
る接合用金属24を配列したものである。接合用金属2
4には400℃程度以下の加熱によって容易に溶融する
はんだ等の金属を使用する。
The connection wiring body 20 is interposed between the mounting surface of the substrate 10 and the mounting substrate 30, and connects the semiconductor device 5 to the mounting substrate 30.
And has the function of electrically connecting the semiconductor device 5 to the mounting substrate 30. Connection wiring body 20 of embodiment
Is a bonding metal which is formed in a film shape using a resin material 22 having electrical insulation as a base material, penetrates the film in the thickness direction in the same planar arrangement as the connection terminals 16 of the substrate 10, and becomes an electrically conductive portion. 24 are arranged. Joining metal 2
For 4, a metal such as solder that is easily melted by heating at about 400 ° C. or less is used.

【0010】図4に接続配線体20の作成方法を示す。
図4(a) は軸線に平行に多数本の金属線を底面から上面
まで貫通させ樹脂材22により一体に固化させた柱状体
40である。柱状体40は有底の円筒状の容器内に接続
端子16の平面配置と同一の配列で金属線を立設し、固
化前で流動性を有する樹脂材22を容器に充填した後、
樹脂材22を固化させることによって得ることができ
る。
FIG. 4 shows a method of forming the connection wiring body 20.
FIG. 4A shows a columnar body 40 in which a number of metal wires penetrate from the bottom surface to the upper surface in parallel with the axis and are integrally solidified by the resin material 22. The columnar body 40 is provided with metal wires standing in the same arrangement as the planar arrangement of the connection terminals 16 in a bottomed cylindrical container, and after filling the container with the fluid resin material 22 before solidification,
It can be obtained by solidifying the resin material 22.

【0011】次いで、固化した柱状体40を軸線に垂直
な方向からスライスしてスライス体42を得る。スライ
ス体42は上記接続配線体20の厚さに合わせてスライ
ス厚を設定する。1枚のスライス体42から複数個の接
続配線体20が得られるよう、柱状体40に繰り返し配
置で金属線を配列してもよい。得られたスライス体42
を個片に切り出しして、図4(c) に示すような接続配線
体20が得られる。柱状体40をスライスすることによ
り接続配線体20は両面に接合用金属24の端面が露出
して形成される。
Next, the solidified columnar body 40 is sliced from a direction perpendicular to the axis to obtain a sliced body 42. The slice thickness of the slice body 42 is set according to the thickness of the connection wiring body 20. Metal wires may be repeatedly arranged on the columnar body 40 so that a plurality of connection wiring bodies 20 are obtained from one slice body 42. The obtained slice body 42
Is cut out into individual pieces to obtain a connection wiring body 20 as shown in FIG. By slicing the columnar body 40, the connection wiring body 20 is formed with the end surfaces of the bonding metal 24 exposed on both surfaces.

【0012】接続配線体20を構成する樹脂材22とし
ては、熱可塑性樹脂材としてポリイミド系、ポリフェニ
レンエーテル系等の樹脂材が使用でき、熱硬化性樹脂材
としてエポキシ系、ポリイミド系、シアネート系等の樹
脂材が使用できる。接続配線体20は半導体装置5の実
装方法に応じて、樹脂材22が接着性を有しない状態あ
るいは接着性を有する状態で使用される。この樹脂材2
2の性質は柱状体40を作成する際の処理条件によって
設定でき、柱状体40を固化させる際に完全にキュアす
ることによって接着性を有しなくなり、完全にキュアし
ないようにすることで接着性を保持することができる。
樹脂材22が接着性を有する状態で接続配線体20を使
用して実装した場合は接続配線体20は半導体装置5の
基板10と実装基板30にともに一体に接着される。
As the resin material 22 constituting the connection wiring body 20, a resin material such as a polyimide resin or a polyphenylene ether resin can be used as a thermoplastic resin material, and an epoxy resin, a polyimide resin, a cyanate resin or the like can be used as a thermosetting resin material. Resin material can be used. The connection wiring body 20 is used in a state in which the resin material 22 has no adhesive property or has an adhesive property, depending on a mounting method of the semiconductor device 5. This resin material 2
The property of No. 2 can be set according to the processing conditions at the time of forming the columnar body 40. When the columnar body 40 is solidified, it is completely cured so that it has no adhesiveness, and it is not completely cured so that the adhesiveness is not obtained. Can be held.
When the connection wiring body 20 is mounted using the connection wiring body 20 in a state in which the resin material 22 has adhesiveness, the connection wiring body 20 is integrally bonded to the substrate 10 and the mounting substrate 30 of the semiconductor device 5.

【0013】接続配線体20を使用して半導体装置5を
実装基板30に実装する際には、半導体装置5、接続配
線体20および実装基板30を相互に位置合わせし、基
板10と実装基板30との中間に接続配線体20を挟
み、若干荷重をかけながら加熱して接続配線体20の接
合用金属24を溶融し、基板10の接続端子16と実装
基板30の接続パッド32に接合用金属24を溶着す
る。
When the semiconductor device 5 is mounted on the mounting board 30 using the connection wiring body 20, the semiconductor device 5, the connection wiring body 20 and the mounting board 30 are aligned with each other, and the substrate 10 and the mounting board 30 are aligned. The connection wiring body 20 is sandwiched in the middle of the connection wiring body 20 and heated while slightly applying a load to melt the bonding metal 24 of the connection wiring body 20, and the connection metal 16 is connected to the connection terminals 16 of the board 10 and the connection pads 32 of the mounting board 30. 24 are welded.

【0014】本実施形態の実装方法は、接続配線体20
を半導体装置5の基板10に一体に接着させ、実装基板
30には接続配線体20の樹脂材22が一体に接着しな
いようにすることを特徴とする。そのため、まず、基板
10の実装面にソルダレジスト等の接着性を有する樹脂
材18を塗着する。図2(a) は基板10に樹脂材18を
塗着した状態である。樹脂材18の材質は接続配線体2
0の樹脂材22と同一である必要はないが、確実に一体
化させるには同質の材料の方がよい。なお、本実施形態
で使用する接続配線体20は完全にキュアした後のもの
で、樹脂材22自体には接着性がないものである。
The mounting method according to the present embodiment uses the connection wiring body 20.
Are bonded integrally to the substrate 10 of the semiconductor device 5 so that the resin material 22 of the connection wiring body 20 is not integrally bonded to the mounting substrate 30. Therefore, first, an adhesive resin material 18 such as a solder resist is applied to the mounting surface of the substrate 10. FIG. 2A shows a state in which the resin material 18 is applied to the substrate 10. The material of the resin material 18 is the connection wiring body 2
Although it is not necessary to be the same as the resin material 22 of the No. 0, a material of the same quality is better in order to surely integrate them. The connection wiring body 20 used in the present embodiment has been completely cured, and the resin material 22 itself has no adhesiveness.

【0015】基板10に樹脂材18を塗布する場合は、
スクリーン印刷法等により接続端子16を除く実装面の
外面全体を被覆する。樹脂材18を塗布した後、完全に
キュアしないようにすることで接着性が得られる。次い
で、図2(a) に示すように基板10、接続配線体20、
実装基板30を位置合わせして接続配線体20を基板1
0と実装基板30で挟み、加熱炉内で加熱して接合用金
属24を溶融させ、若干荷重をかけて接合用金属24を
接続端子16と接続パッド32とに溶着する。
When the resin material 18 is applied to the substrate 10,
The entire outer surface of the mounting surface except the connection terminals 16 is covered by a screen printing method or the like. After the application of the resin material 18, the adhesive is obtained by completely preventing the resin material from being cured. Next, as shown in FIG.
The connection wiring body 20 is mounted on the substrate 1 by aligning the mounting substrate 30.
0 and the mounting substrate 30, and heated in a heating furnace to melt the joining metal 24, and apply a slight load to weld the joining metal 24 to the connection terminals 16 and the connection pads 32.

【0016】接続配線体20の接合用金属24を接続端
子16と接続パッド32に溶着した後、半導体装置5を
実装基板30の全体を所定温度に加熱した雰囲気中で保
持し基板10に塗着した樹脂材18を完全にキュアさせ
て接続配線体20の樹脂材22と樹脂材18とを一体化
させ基板10の実装面に接続配線体20を一体に接着す
る。接続配線体20の樹脂材22自体は接着性を有しな
いが、樹脂材18を接着材として利用することによって
基板10の実装面に一体に接続配線体20が接着され
る。
After the bonding metal 24 of the connection wiring body 20 is welded to the connection terminals 16 and the connection pads 32, the semiconductor device 5 is applied to the substrate 10 by holding the entire mounting substrate 30 in an atmosphere heated to a predetermined temperature. The cured resin material 18 is completely cured so that the resin material 22 of the connection wiring body 20 and the resin material 18 are integrated, and the connection wiring body 20 is integrally bonded to the mounting surface of the substrate 10. Although the resin material 22 itself of the connection wiring body 20 has no adhesiveness, the connection wiring body 20 is integrally bonded to the mounting surface of the substrate 10 by using the resin material 18 as an adhesive.

【0017】実装基板30の面では接続配線体20の樹
脂材22は実装基板30の表面に単に接しているだけで
ある。図2(b) では実装基板30に樹脂材22が接着し
ていない様子を実装基板30の保護被膜34と樹脂材2
2との間に隙間が形成されたように誇張して表現してい
る。このように接続配線体20を介して実装基板30に
半導体装置5を実装した際に、接合用金属24が基板1
0の接続端子16および実装基板30の接続パッド32
に溶着し、樹脂材22が実装基板30に単に接した状態
となっていることは実装基板30と半導体装置5との間
で生じる熱応力を緩和するためにきわめて有効である。
On the surface of the mounting substrate 30, the resin material 22 of the connection wiring body 20 is merely in contact with the surface of the mounting substrate 30. In FIG. 2B, the state in which the resin material 22 is not adhered to the mounting board 30 is shown by the protective film 34 of the mounting board 30 and the resin material 2.
2 are exaggerated as if a gap was formed between them. When the semiconductor device 5 is mounted on the mounting substrate 30 via the connection wiring body 20 in this manner, the bonding metal 24
0 connection terminal 16 and connection pad 32 of mounting board 30
That the resin material 22 is simply in contact with the mounting board 30 is very effective for reducing thermal stress generated between the mounting board 30 and the semiconductor device 5.

【0018】すなわち、半導体装置5と実装基板30と
が基板10の実装面全体で一体的に接合している場合に
は、実装基板30と基板10との熱膨張係数の差異に起
因する熱応力が基板10全体に作用するのに対して、本
実施形態のように接続配線体20のうち樹脂材22の部
分が実装基板30から分離した状態にある場合には、基
板10と実装基板30との間で生じる熱応力は基板10
の全体に直接的に作用せず、これによって基板10と実
装基板30との間で生じる熱応力を効果的に緩和するこ
とが可能になる。また、樹脂材22が隣接する接合用金
属24の中間に介在することによって接合用金属24に
直接的に作用する熱応力を分散させ、接合用金属24と
接続パッド32との接合部に熱応力が集中しないように
することが可能となる。
That is, when the semiconductor device 5 and the mounting substrate 30 are integrally joined on the entire mounting surface of the substrate 10, the thermal stress caused by the difference in the thermal expansion coefficient between the mounting substrate 30 and the substrate 10 Acts on the entire substrate 10, whereas when the resin material 22 portion of the connection wiring body 20 is separated from the mounting substrate 30 as in the present embodiment, the substrate 10 and the mounting substrate 30 Between the substrate 10
Does not directly act on the entire structure, thereby making it possible to effectively reduce the thermal stress generated between the substrate 10 and the mounting substrate 30. In addition, since the resin material 22 is interposed between the adjacent joining metals 24, the thermal stress directly acting on the joining metal 24 is dispersed, and the thermal stress is applied to the joint between the joining metal 24 and the connection pad 32. Can be prevented from being concentrated.

【0019】なお、図2(b) で接合用金属24と接続パ
ッド32との接合部近傍がややくびれた形状になってい
るのは、実装時に接合用金属24が溶融され、接続パッ
ド32に濡れることによって接合用金属24が充填され
ていた孔から接合用金属24が移動したことを示す。接
合用金属24は樹脂材22とは濡れないから孔内に隙間
が形成される。接合用金属24が樹脂材22と濡れない
状態にあることは、熱応力が接合用金属24に作用した
際に接合用金属24に対し樹脂材22が独立に作用して
緩衝作用をさらに有効に発揮させることを可能にする。
In FIG. 2B, the reason why the vicinity of the joint between the joining metal 24 and the connection pad 32 is slightly constricted is that the joining metal 24 is melted during mounting and This indicates that the joining metal 24 has moved from the hole filled with the joining metal 24 by wetting. Since the bonding metal 24 does not wet with the resin material 22, a gap is formed in the hole. The fact that the joining metal 24 is not wet with the resin material 22 means that when thermal stress acts on the joining metal 24, the resin material 22 acts independently on the joining metal 24 to more effectively cushion the metal. To be able to demonstrate.

【0020】図3は接続配線体20を使用して半導体装
置を実装基板30に実装する他の実施形態を示す。この
実施形態では接続配線体20を半導体装置の基板10に
も実装基板30にも一体に接着させることなく実装する
ことを特徴とする。図3は接続配線体20を介して半導
体装置を実装基板30に実装した状態を示す。本実施形
態の場合も接続配線体20と半導体装置および実装基板
30を相互に位置合わせし、接続配線体20を基板10
と実装基板30とで挟んで加圧しながら加熱炉中で接合
用金属24を溶融させ、基板10の接続端子16と実装
基板30の接続パッド32に接合用金属24を溶着す
る。
FIG. 3 shows another embodiment in which a semiconductor device is mounted on a mounting substrate 30 using the connection wiring body 20. This embodiment is characterized in that the connection wiring body 20 is mounted on the substrate 10 and the mounting substrate 30 of the semiconductor device without being integrally bonded. FIG. 3 shows a state where the semiconductor device is mounted on the mounting board 30 via the connection wiring body 20. Also in the case of the present embodiment, the connection wiring body 20 and the semiconductor device and the mounting board 30 are aligned with each other, and the connection wiring body 20 is
The bonding metal 24 is melted in a heating furnace while being pressed between the substrate and the mounting substrate 30, and the bonding metal 24 is welded to the connection terminals 16 of the substrate 10 and the connection pads 32 of the mounting substrate 30.

【0021】接合用金属24は接続端子16と接続パッ
ド32に濡れ接合し、接合部の近傍部分では図のように
くびれ形状となる。本実施形態では上述した実施形態と
同様に接合用金属24が接続端子16と接続パッド32
に溶着される一方、接合用金属24以外の樹脂材22の
部分では基板10にも実装基板30にも一体に接着せず
単に中間に挟まれて介在した状態となる。樹脂材22は
こうして基板10と実装基板30との間で生じる熱応力
を効果的に緩和する作用をなす。
The joining metal 24 is wet-joined to the connection terminal 16 and the connection pad 32, and has a constricted shape as shown in FIG. In the present embodiment, as in the above-described embodiment, the bonding metal 24 includes the connection terminal 16 and the connection pad 32.
On the other hand, the portion of the resin material 22 other than the bonding metal 24 is not integrally bonded to the substrate 10 or the mounting substrate 30 but is simply sandwiched in the middle. The resin material 22 functions to effectively reduce the thermal stress generated between the board 10 and the mounting board 30 in this manner.

【0022】このように接続配線体20を用いて配線装
置を実装する方法は、半導体装置を実装基板に容易に実
装できるようにするとともに、表面実装形式の半導体装
置を実装した際に半導体装置と実装基板との間で生じる
熱応力を好適に緩和させることができ、信頼性の高い半
導体装置の実装構造として提供することができるという
利点を有する。
As described above, the method of mounting the wiring device using the connection wiring body 20 allows the semiconductor device to be easily mounted on the mounting substrate and also allows the semiconductor device to be mounted on the surface mounting type semiconductor device when mounted. This has the advantage that the thermal stress generated between the semiconductor device and the mounting substrate can be suitably reduced, and the semiconductor device can be provided as a highly reliable semiconductor device mounting structure.

【0023】なお、上記実施形態では接続配線体20の
すべての接合用金属24が半導体装置と実装基板30と
の間で信号ライン等の電気的接続に寄与しているが、接
合用金属24がすべて電気的接続に寄与しなければなら
ないものではない。すなわち、接続配線体20は図4
(c) に示すように接合用金属24を接続配線体20の平
面内で所定間隔でアレイ状に配置したものであり、これ
らは半導体装置の実装面に配列される接続端子16の配
列にしたがっているのであるが、たとえば実装面で周辺
部に信号ライン等の電気的接続が必要な接続端子16が
存在し、実装面の中央部付近には電気的接続が必要な接
続端子16が存在しないような場合であっても接続配線
体20の中央部付近に接合用金属24を配列することに
より、これらの接合用金属24を半導体装置から実装基
板へ熱を逃がすサーマルビアと同様な作用を奏するもの
として利用できるからである。
In the above embodiment, all the bonding metals 24 of the connection wiring body 20 contribute to the electrical connection of the signal lines and the like between the semiconductor device and the mounting substrate 30. Not all must contribute to the electrical connection. That is, the connection wiring body 20 is
As shown in (c), the joining metals 24 are arranged in an array at predetermined intervals in the plane of the connection wiring body 20, and these are arranged according to the arrangement of the connection terminals 16 arranged on the mounting surface of the semiconductor device. However, for example, there is a connection terminal 16 that needs electrical connection such as a signal line in a peripheral portion on a mounting surface, and there is no connection terminal 16 that needs an electrical connection near a central portion of the mounting surface. Even in such a case, by arranging the bonding metal 24 near the center of the connection wiring body 20, the bonding metal 24 has an effect similar to that of a thermal via which dissipates heat from the semiconductor device to the mounting substrate. Because it can be used as.

【0024】半導体装置の実装面で周辺部にのみ接続端
子16が存在するような場合には、実装面の中央部付近
に放熱体を設けておき、半導体装置を実装基板に実装し
た際にこの放熱体と接合用金属24とを接合してさらに
半導体装置からの熱放散性を向上させることも可能であ
る。
In the case where the connection terminals 16 are present only in the peripheral portion of the mounting surface of the semiconductor device, a heat radiator is provided near the center of the mounting surface, and when the semiconductor device is mounted on the mounting board, It is also possible to further improve the heat dissipation from the semiconductor device by joining the radiator and the joining metal 24.

【0025】[0025]

【実施例】【Example】

(実施例1)エポキシ系樹脂を樹脂材22に使用し、鉛
錫共晶組成の金属材を接合用金属24に使用した接続配
線体20を用いてプラスチックLGAを樹脂製の実装基
板に実装した。本実施例は接続配線体20はプラスチッ
クLGAと実装基板の双方に樹脂材が接着しない形態に
よる実装構造である。
(Example 1) A plastic LGA was mounted on a resin mounting board using a connection wiring body 20 using an epoxy resin as a resin material 22 and a metal material having a lead-tin eutectic composition as a bonding metal 24. . In this embodiment, the connection wiring body 20 has a mounting structure in which the resin material does not adhere to both the plastic LGA and the mounting board.

【0026】前記接続配線体20をプラスチックLGA
と樹脂の実装基板との間で位置決めして挟み、荷重をか
けながら210℃で1分間、ベーパフィーダ内でリフロ
ーし、プラスチックLGAを実装基板に実装した。接続
配線体20はプラスチックLGAの実装面および実装基
板には接着せず、上記接合用金属24がプラスチックL
GAの実装面に設けられた接続端子16と実装基板の表
面に設けられた接続パッド32に溶着して実装された。
The connection wiring body 20 is made of plastic LGA
And a plastic LGA was mounted on the mounting board by repositioning the battery in a vapor feeder at 210 ° C. for 1 minute while applying a load. The connection wiring body 20 does not adhere to the mounting surface of the plastic LGA and the mounting substrate, and the bonding metal 24 is
The connection terminals 16 provided on the mounting surface of the GA and the connection pads 32 provided on the surface of the mounting board were welded and mounted.

【0027】(実施例2)実施例1で使用した接続配線
体20と同じ接続配線体20を使用し、プラスチックL
GAの実装面側のみに接続配線体20が接着した実装構
造による実施例である。まず、プラスチックLGAの実
装面側に接続配線体20を接着するため基板にエポキシ
系ソルダレジストをスクリーン印刷する。このスクリー
ン印刷は基板の実装面に形成されている接続端子16を
除く外表面をソルダレジストで被覆する操作である。
(Embodiment 2) Using the same connection wiring body 20 as used in the first embodiment,
This is an example of a mounting structure in which the connection wiring body 20 is adhered only to the mounting surface side of the GA. First, an epoxy-based solder resist is screen-printed on a substrate to bond the connection wiring body 20 to the mounting surface side of the plastic LGA. This screen printing is an operation of covering the outer surface except for the connection terminals 16 formed on the mounting surface of the substrate with a solder resist.

【0028】次に、スクリーン印刷によりプラスチック
LGAの実装面に塗着したエポキシ系ソルダレジストを
フルキュアしない状態で、前記接続配線体20をプラス
チックLGAの実装面と実装基板とに位置決めして挟
み、荷重を加えて、210℃で1分間、ベーパフィーダ
内でリフローした後、150℃の窒素ボックス内で30
分保持し、プラスチックLGAの実装面に接続配線体2
0の樹脂材22を一体に接着させた。この接合操作によ
り、接合用金属24はプラスチックLGAの基板に形成
された接続端子16と実装基板に設けた接続パッド32
に溶着し、接続配線体20はプラスチックLGAの基板
に一体に接着して半導体装置が実装基板に実装された。
Next, in a state where the epoxy solder resist applied to the mounting surface of the plastic LGA by screen printing is not fully cured, the connection wiring body 20 is positioned and sandwiched between the mounting surface of the plastic LGA and the mounting board, and the load is applied. After reflowing in a vapor feeder at 210 ° C. for 1 minute, 30 ° C. in a nitrogen box at 150 ° C.
And the connection wiring 2 on the mounting surface of the plastic LGA.
0 resin material 22 was integrally bonded. By this joining operation, the joining metal 24 is connected to the connection terminals 16 formed on the plastic LGA substrate and the connection pads 32 provided on the mounting substrate.
Then, the connection wiring body 20 was integrally bonded to a plastic LGA substrate, and the semiconductor device was mounted on the mounting substrate.

【0029】[0029]

【発明の効果】本発明に係る半導体装置の実装構造によ
れば、上述したように、半導体装置の基板と実装基板と
の間に接続配線体を介して半導体装置を実装した構造と
したことにより、表面実装形式の半導体装置で実装面に
接続端子を配列した製品を実装した際に実装基板と半導
体装置との間で生じる熱応力を好適に緩和することがで
き、これによって信頼性のたかい半導体装置の実装構造
を提供することができる。また、本発明に係る実装構造
の場合には半導体装置に接続配線体を装着するだけで実
装できるから、熱応力を緩和してかつ実装しやすい実装
構造として提供することができる等の著効を奏する。
According to the semiconductor device mounting structure of the present invention, as described above, the semiconductor device is mounted between the substrate of the semiconductor device and the mounting substrate via the connection wiring body. When a product in which connection terminals are arranged on a mounting surface in a surface-mount type semiconductor device is mounted, the thermal stress generated between the mounting substrate and the semiconductor device can be suitably reduced, thereby increasing the reliability of the semiconductor. An apparatus mounting structure can be provided. Further, in the case of the mounting structure according to the present invention, since mounting can be performed simply by mounting the connection wiring body on the semiconductor device, it is possible to provide a mounting structure in which thermal stress is reduced and the mounting structure is easy to mount. Play.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る半導体装置の実装構造を示す説明
図である。
FIG. 1 is an explanatory view showing a mounting structure of a semiconductor device according to the present invention.

【図2】基板に接続配線体を装着して実装基板に実装す
る方法を示す説明図である。
FIG. 2 is an explanatory view showing a method of mounting a connection wiring body on a board and mounting the connection wiring body on a mounting board;

【図3】基板に接続配線体を装着して実装基板に実装す
る他の方法を示す説明図である。
FIG. 3 is an explanatory view showing another method of mounting a connection wiring body on a board and mounting the connection wiring body on a mounting board;

【図4】接続配線体の製造例を示す説明図である。FIG. 4 is an explanatory view showing an example of manufacturing a connection wiring body.

【符号の説明】[Explanation of symbols]

5 半導体装置 10 基板 16 接続端子 18 樹脂材 20 接続配線体 22 樹脂材 24 接合用金属 30 実装基板 32 接続パッド 34 保護被膜 40 柱状体 42 スライス体 Reference Signs List 5 semiconductor device 10 substrate 16 connection terminal 18 resin material 20 connection wiring body 22 resin material 24 bonding metal 30 mounting board 32 connection pad 34 protective film 40 pillar body 42 sliced body

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 基板の実装面に多数個の接続端子が配置
された半導体装置が、前記接続端子と同一の平面配置で
接続パッドが形成された実装基板に、前記実装面と前記
実装基板との間に接続配線体を介して表面実装されて成
る半導体装置の実装構造であって、 前記接続配線体が、前記接続端子と同一の平面配置で配
列された、前記接続端子と前記接続パッドとに溶着され
て前記接続端子と前記接続パッドとを電気的に接続する
接合用金属と、 前記基板の実装面と前記実装基板の搭載面との間に介在
する電気的絶縁性を有する樹脂材とから成ることを特徴
とする半導体装置の実装構造。
A semiconductor device having a plurality of connection terminals arranged on a mounting surface of a substrate is provided on a mounting substrate having connection pads formed in the same planar arrangement as the connection terminals. A mounting structure of the semiconductor device, which is surface-mounted via a connection wiring body therebetween, wherein the connection wiring body is arranged in the same planar arrangement as the connection terminal, wherein the connection terminal and the connection pad A bonding metal that is welded to the connection terminal and electrically connects the connection pad, and a resin material having electrical insulation interposed between a mounting surface of the substrate and a mounting surface of the mounting substrate. A mounting structure of a semiconductor device, comprising:
【請求項2】 前記樹脂材が、前記基板の実装面に一体
に接着されており、前記実装基板の搭載面には接着して
いないことを特徴とする請求項1記載の半導体装置の実
装構造。
2. The mounting structure for a semiconductor device according to claim 1, wherein said resin material is integrally bonded to a mounting surface of said substrate, and is not bonded to a mounting surface of said mounting substrate. .
【請求項3】 前記樹脂材が、前記基板の実装面および
前記実装基板の搭載面には接着していないことを特徴と
する請求項1記載の半導体装置の実装構造。
3. The semiconductor device mounting structure according to claim 1, wherein said resin material is not bonded to a mounting surface of said substrate and a mounting surface of said mounting substrate.
【請求項4】 前記接合用金属が、少なくとも前記接続
端子の配置位置を含む基板の実装面の全体に対応してア
レイ状に配置されたことを特徴とする請求項12または
3記載の半導体装置の実装構造。
4. The semiconductor device according to claim 12, wherein the bonding metals are arranged in an array corresponding to at least the entire mounting surface of the substrate including the arrangement position of the connection terminals. Mounting structure.
【請求項5】 基板の実装面に多数個の接続端子が配置
された半導体装置を、前記接続端子と同一の平面配置で
接続パッドが形成された実装基板に、前記実装面と前記
実装基板との間に接続配線体を介して表面実装する半導
体装置の実装方法であって、 フィルム状に形成された電気的絶縁性を有する樹脂材を
厚さ方向に貫通して前記接続端子と同一の平面配置で接
合用金属が配置された接続配線体を、前記基板および実
装基板と位置合わせして前記基板の実装面と前記実装基
板との間で挟圧支持し、 前記接合用金属が溶融する温度にまで加熱して、接合用
金属を前記接続端子及び前記接続パッドに溶着すること
を特徴とする半導体装置の実装方法。
5. A semiconductor device having a plurality of connection terminals disposed on a mounting surface of a substrate, wherein the mounting surface and the mounting substrate are mounted on a mounting substrate having connection pads formed in the same plane as the connection terminals. A method for mounting a semiconductor device, which is surface-mounted via a connection wiring body between the connection terminals, wherein a resin material having an electrical insulating property formed in a film shape is penetrated in a thickness direction and is flush with the connection terminal. The connection wiring body on which the joining metal is arranged is aligned with the substrate and the mounting board, and is squeezed and supported between the mounting surface of the substrate and the mounting board, and the temperature at which the joining metal melts Wherein the bonding metal is welded to the connection terminals and the connection pads by heating the semiconductor device to the temperature.
【請求項6】 前記接続配線体として、前記樹脂材が前
記基板および実装基板に対して接着性を有しないものを
用い、 前記基板の実装面に前記接続端子の配置位置を除いてソ
ルダレジスト等の接着性を有する樹脂材を塗着した後、 前記接続配線体を、前記基板および実装基板と位置合わ
せして前記基板の実装面と前記実装基板との間で挟圧支
持し、 前記接合用金属が溶融する温度にまで加熱して、接合用
金属を前記接続端子及び前記接続パッドに溶着し、 前記接着性を有する樹脂材をキュアすることにより、前
記基板に前記接続配線体の樹脂材を一体に接着すること
を特徴とする半導体装置の実装方法。
6. The connection wiring body, wherein the resin material has no adhesiveness to the substrate and the mounting substrate, and a solder resist or the like except for a position of the connection terminal on a mounting surface of the substrate. After applying a resin material having an adhesive property, the connection wiring body is aligned with the substrate and the mounting substrate, and squeezed and supported between the mounting surface of the substrate and the mounting substrate. By heating to a temperature at which the metal is melted, the joining metal is welded to the connection terminal and the connection pad, and the resin material having the adhesive property is cured, so that the resin material of the connection wiring body is formed on the substrate. A method for mounting a semiconductor device, wherein the semiconductor device is integrally bonded.
【請求項7】 前記接続配線体として、前記樹脂材が前
記基板および実装基板に対して接着性を有しないものを
用いることを特徴とする請求項5記載の半導体装置の実
装方法。
7. The mounting method of a semiconductor device according to claim 5, wherein the connection wiring body is made of a material in which the resin material has no adhesiveness to the substrate and the mounting substrate.
JP16856697A 1997-06-25 1997-06-25 Structure and method for mounting semiconductor device Pending JPH1117053A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16856697A JPH1117053A (en) 1997-06-25 1997-06-25 Structure and method for mounting semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16856697A JPH1117053A (en) 1997-06-25 1997-06-25 Structure and method for mounting semiconductor device

Publications (1)

Publication Number Publication Date
JPH1117053A true JPH1117053A (en) 1999-01-22

Family

ID=15870423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16856697A Pending JPH1117053A (en) 1997-06-25 1997-06-25 Structure and method for mounting semiconductor device

Country Status (1)

Country Link
JP (1) JPH1117053A (en)

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