JPH11163413A - Light source device - Google Patents
Light source deviceInfo
- Publication number
- JPH11163413A JPH11163413A JP9323637A JP32363797A JPH11163413A JP H11163413 A JPH11163413 A JP H11163413A JP 9323637 A JP9323637 A JP 9323637A JP 32363797 A JP32363797 A JP 32363797A JP H11163413 A JPH11163413 A JP H11163413A
- Authority
- JP
- Japan
- Prior art keywords
- emitting diode
- diode chip
- light emitting
- light
- lead piece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、発光ダイオードを
用いた光源装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light source device using a light emitting diode.
【０００２】[0002]
【従来の技術】図７は一般的な発光ダイオードの構造を
示す側面断面図である。発光ダイオードチップ１は反射
板を兼ねるカソードリード４のリード片４ａに導電性接
着剤によって接合され、上面に形成された他方の電極に
ワイヤ（金線）５の一端がワイヤボンディングにより接
続され、ワイヤ５の他端がアノードリード２に接続され
ている。さらに発光ダイオードチップ１、リード片４
ａ、カソードリード４並びにアノードリード２の一部を
透光性を有する樹脂（エポキシ樹脂など）でモールドす
ることにより発光ダイオードチップ１の保護が図られて
いる。2. Description of the Related Art FIG. 7 is a side sectional view showing a structure of a general light emitting diode. The light emitting diode chip 1 is joined to a lead piece 4a of a cathode lead 4 also serving as a reflector by a conductive adhesive, and one end of a wire (gold wire) 5 is connected to the other electrode formed on the upper surface by wire bonding. 5 is connected to the anode lead 2 at the other end. Further, a light emitting diode chip 1 and a lead piece 4
a, the light emitting diode chip 1 is protected by molding a part of the cathode lead 4 and the anode lead 2 with a translucent resin (epoxy resin or the like).
【０００３】而して、カソードリード４とアノードリー
ド２の間に電圧を印加することで発光ダイオードチップ
１から光が発せられ、その光の一部が反射板６によって
反射され、樹脂のモールド体１２内部を伝搬して外部へ
放射される。このときモールド体１２が曲率を有する形
状に形成されている場合には、モールド体１２がレンズ
の役割を果たして光が集光あるいは拡散されることにな
る。When a voltage is applied between the cathode lead 4 and the anode lead 2, light is emitted from the light emitting diode chip 1, and a part of the light is reflected by the reflecting plate 6 to form a resin mold. 12 and radiated to the outside. At this time, when the mold body 12 is formed in a shape having a curvature, the mold body 12 plays a role of a lens and condenses or diffuses light.
【０００４】[0004]
【発明が解決しようとする課題】ところで、上記のよう
な発光ダイオードを用いた光源装置において配光特性を
変化させるためには、発光ダイオードを機械的に移動さ
せるか、あるいは発光ダイオード自体に複数の発光ダイ
オードチップ１を設ける方法が考えられる。しかしなが
ら、前者の方法では発光ダイオードを移動させるための
構造並びにスペースが必要となって光源装置が大型化す
るという問題がある。一方、後者の方法では発光ダイオ
ードチップ１を複数設けるためにコストがアップすると
いう問題がある。By the way, in order to change the light distribution characteristics in the light source device using the light emitting diode as described above, the light emitting diode is mechanically moved or a plurality of light emitting diodes are attached to the light emitting diode itself. A method of providing the light emitting diode chip 1 can be considered. However, the former method has a problem that a structure and a space for moving the light emitting diode are required, and the light source device is enlarged. On the other hand, the latter method has a problem that the cost increases because a plurality of light emitting diode chips 1 are provided.
【０００５】本発明は上記問題点の解決を目的とするも
のであり、簡単な構造で配光特性を容易に変化させるこ
とができる光源装置を提供しようとするものである。SUMMARY OF THE INVENTION An object of the present invention is to provide a light source device capable of easily changing light distribution characteristics with a simple structure.
【０００６】[0006]
【課題を解決するための手段】請求項１の発明は、上記
目的を達成するために、発光ダイオードを用いた光源装
置であって、発光ダイオードチップと該発光ダイオード
チップに対向配置される反射板との距離を可変する可変
手段を備えたことを特徴とし、可変手段によって発光ダ
イオードチップと反射板との距離（相対的な位置関係）
を可変し、光の配光特性を簡単な構造で容易に変化させ
ることができる。According to the first aspect of the present invention, there is provided a light source device using a light emitting diode, wherein the light emitting diode chip and a reflecting plate are disposed to face the light emitting diode chip. A variable means for varying the distance between the light emitting diode chip and the reflector by the variable means (relative positional relationship)
And the light distribution characteristics of light can be easily changed with a simple structure.
【０００７】また、請求項２の発明のように、発光ダイ
オードチップが取着されたリード片と、導電性を有する
反射板とで上記可変手段を構成すれば、リード片と反射
板の間に電圧を印加することでリード片と反射板との間
に静電力を作用させ、両者の距離、すなわち発光ダイオ
ードチップと反射板との距離を簡単な構造で容易に可変
することができる。Further, if the variable means is constituted by the lead piece on which the light emitting diode chip is mounted and the conductive reflector, the voltage is applied between the lead piece and the reflector. By applying the voltage, an electrostatic force acts between the lead piece and the reflector, and the distance between them, that is, the distance between the light emitting diode chip and the reflector can be easily changed with a simple structure.
【０００８】なお、請求項３の発明のように、リード片
を可動自在に形成することが望ましい。また、請求項４
の発明のように、発光ダイオードチップの両電極を導電
性接着剤によりリード片に接着固定すれば、発光ダイオ
ードチップの電極を接続するためにワイヤ（金線）を用
いずに済み、ワイヤにより発光ダイオードチップから発
せられた光の一部が遮られることが無くなり、光の利用
効率を向上することができる。It is desirable that the lead piece be formed movably, as in the third aspect of the present invention. Claim 4
If both electrodes of the light emitting diode chip are adhered and fixed to the lead piece with a conductive adhesive as in the invention of the third aspect, a wire (gold wire) is not required to connect the electrodes of the light emitting diode chip, and the light is emitted by the wire. Part of the light emitted from the diode chip is not obstructed, so that the light use efficiency can be improved.
【０００９】なお、請求項５の発明のように、絶縁体と
導体とを層状に重ねて上記リード片を形成することが望
ましい。Preferably, the lead piece is formed by laminating an insulator and a conductor in layers.
【００１０】[0010]
【発明の実施の形態】（実施形態１）図１は本実施形態
における発光ダイオードＬＤの要部側面図を示してい
る。アノードリード２の先端部分に一端が片持ち支持さ
れたリード片３を形成し、このリード片３の先端近傍の
上面に発光ダイオードチップ１を導電性接着剤等により
固定してある。なお、リード片３に接着される面は発光
ダイオードチップ１のアノード電極である。さらに発光
ダイオードチップ１の他方の面のカソード電極がワイヤ
（金線）５によりカソードリード４に接続される。そし
て、アノードリード２とカソードリード４の間に電圧を
印加することで発光ダイオードチップ１が発光する。(Embodiment 1) FIG. 1 is a side view of a main part of a light emitting diode LD according to this embodiment. A lead piece 3 whose one end is cantilevered is formed at the tip of the anode lead 2, and the light emitting diode chip 1 is fixed to the upper surface near the tip of the lead piece 3 by a conductive adhesive or the like. Note that the surface bonded to the lead piece 3 is the anode electrode of the light emitting diode chip 1. Further, the cathode electrode on the other surface of the light emitting diode chip 1 is connected to the cathode lead 4 by a wire (gold wire) 5. Then, by applying a voltage between the anode lead 2 and the cathode lead 4, the light emitting diode chip 1 emits light.
【００１１】一方、リード片３の先端近傍の下側には、
発光ダイオードチップ１の発する光を反射するために反
射板６が配設されている。なお、図示は省略している
が、反射板６には外部から電圧が印加できるように端子
が設けてある。アノードリード２と反射板６の端子の間
に電圧を印加すると、リード片３と反射板６の間に電界
が生じる。この電界によってアノードリード２に片持ち
支持されたリード片３の先端部分と反射板６の間に静電
力がはたらき、この静電力によりリード片３が撓んで反
射板６の方（下方）へ微小距離だけ移動する。その結
果、発光ダイオードチップ１と反射板６との相対的な位
置関係が変化するため、発光ダイオードチップ１から発
せられた光が外部へ放射される経路を変え、配光特性を
変化させることができる。On the other hand, on the lower side near the tip of the lead piece 3,
A reflector 6 is provided to reflect light emitted from the light emitting diode chip 1. Although not shown, a terminal is provided on the reflection plate 6 so that a voltage can be applied from the outside. When a voltage is applied between the anode lead 2 and the terminal of the reflector 6, an electric field is generated between the lead piece 3 and the reflector 6. Due to this electric field, an electrostatic force acts between the tip portion of the lead piece 3 cantilevered by the anode lead 2 and the reflector 6, and the electrostatic force causes the lead piece 3 to bend and move toward the reflector 6 (downward). Move a distance. As a result, the relative positional relationship between the light emitting diode chip 1 and the reflector 6 changes, so that it is possible to change the path of light emitted from the light emitting diode chip 1 to the outside and change the light distribution characteristics. it can.
【００１２】例えば、リード片３の面積を１×１０
-6〔ｍ2 〕、電圧を印加していない定常状態でのリード
片３と反射板６との距離（間隔）を０．５〔ｍｍ〕と
し、アノードリード２と反射板６の間に１０〔Ｖ〕の電
圧を印加すれば、リード片３と反射板６に蓄積される電
荷は１．８×１０-13 〔Ｃ〕であるから、両者の間には
たらく静電力の大きさは１×１０-9〔Ｎ〕程度となる。
従って、リード片３をアルミニウムのように７×１０10
程度の弾性率を有する材料で形成した場合であれば、リ
ード片３の厚みが０．１〔ｍｍ〕程度のときに約０．２
〔ｍｍ〕の撓みがリード片３に生じることになる。発光
ダイオードチップ１と図示しないレンズの焦点との距離
が１〔ｍｍ〕程度ならば、上記撓みによる発光ダイオー
ドチップ１の変動は２０％程度である。よって、図２に
示すように発光ダイオードＬＤから１〔ｍ〕離れた位置
においては、定常状態の配光特性（同図中イで示す）に
対して電圧印加時の配光特性（同図中ロで示す）を周囲
に約２０〔ｃｍ〕程度広げることができる。なお、リー
ド片３を可動させるためにリード片３、発光ダイオード
チップ１などは樹脂によりモールドしないことは言うま
でもない。For example, the area of the lead piece 3 is 1 × 10
-6 [m 2 ], the distance (interval) between the lead piece 3 and the reflector 6 in a steady state where no voltage is applied is 0.5 [mm], and the distance between the anode lead 2 and the reflector 6 is 10 mm. When a voltage of [V] is applied, the electric charge stored in the lead piece 3 and the reflection plate 6 is 1.8 × 10 -13 [C], and the magnitude of the electrostatic force acting between the two is 1 × 10 -13 [C]. It is about 10 -9 [N].
Therefore, the lead piece 3 is made 7 × 10 10 like aluminum.
When the lead piece 3 is formed of a material having an elastic modulus of about
A deflection of [mm] occurs in the lead piece 3. If the distance between the light emitting diode chip 1 and the focal point of a lens (not shown) is about 1 [mm], the fluctuation of the light emitting diode chip 1 due to the bending is about 20%. Therefore, as shown in FIG. 2, at a position 1 [m] away from the light emitting diode LD, the light distribution characteristics at the time of applying a voltage (in FIG. (Shown in b) can be spread about 20 cm around. Needless to say, the lead piece 3, the light emitting diode chip 1 and the like are not molded with resin in order to move the lead piece 3.
【００１３】上述のようにアノードリード２と反射板６
の間に数十ボルトの電圧を印加し、静電力によって発光
ダイオードチップ１が取着されているリード片３を撓ま
せ、発光ダイオードチップ１を数百μｍ移動させて発光
ダイオードチップ１と反射板６との相対的な距離（位置
関係）を可変するようにしたので、簡単な構造で発光ダ
イオードチップ１と反射板６との距離を変えて配光特性
を照射距離に対して数十％変化させることができる。ま
た、実際の光源装置はこのような発光ダイオードＬＤを
複数個列設して構成されるのであるが、上述のような配
光特性の変化を個々の発光ダイオードＬＤについて行う
ことができるため、光源装置全体での微妙な配光特性の
調整が可能となる。しかも、発光ダイオードＬＤ内部の
発光ダイオードチップ１の僅かな変位を利用して配光特
性を変化させているので、光源装置は非常にコンパクト
に形成することが可能である。As described above, the anode lead 2 and the reflector 6
A voltage of several tens of volts is applied between them, and the lead piece 3 on which the light emitting diode chip 1 is attached is bent by electrostatic force, and the light emitting diode chip 1 is moved by several hundred μm to make the light emitting diode chip 1 and the reflector The relative distance (positional relationship) between the light-emitting diode chip 1 and the reflector 6 is changed by a simple structure, and the light distribution characteristics are changed by several tens% with respect to the irradiation distance. Can be done. Further, an actual light source device is configured by arranging a plurality of such light emitting diodes LD in a row, but since the light distribution characteristics can be changed for each light emitting diode LD as described above, the light source It is possible to finely adjust the light distribution characteristics of the entire device. In addition, since the light distribution characteristics are changed by utilizing the slight displacement of the light emitting diode chip 1 inside the light emitting diode LD, the light source device can be formed very compact.
【００１４】（実施形態２）ところで、実施形態１の構
成では発光ダイオードチップ１のカソード電極とカソー
ドリード４をワイヤ５で接続しているため、リード片３
を撓ませることによる振動などによってワイヤ５が断線
する虞がある。また、ワイヤ５によって発光ダイオード
チップ１から発せられた光の一部が遮られて光の利用効
率が低下する場合がある。(Embodiment 2) By the way, in the configuration of Embodiment 1, since the cathode electrode of the light emitting diode chip 1 and the cathode lead 4 are connected by the wire 5, the lead piece 3
The wire 5 may be disconnected due to vibration or the like caused by bending the wire. Further, a part of the light emitted from the light emitting diode chip 1 may be blocked by the wire 5, and the light use efficiency may be reduced.
【００１５】そこで、本実施形態では、図３に示すよう
に板状の絶縁体７ａの上に金属薄膜から成り絶縁層７ｃ
を挟んで長手方向に並ぶ一対の導体７ｂを層状に形成し
てリード片７を構成し、このリード片７の先端近傍に発
光ダイオードチップ１を配置し、発光ダイオードチップ
１両側面の電極を導電性接着剤８によってそれぞれ導体
７ｂに接着して、機械的な固定と電気的な接続とを行う
ようにしている。Therefore, in this embodiment, as shown in FIG. 3, an insulating layer 7c made of a metal thin film is formed on a plate-like insulator 7a.
A pair of conductors 7b arranged in the longitudinal direction are formed in layers to sandwich the lead piece 7 and the light emitting diode chip 1 is arranged near the tip of the lead piece 7, and the electrodes on both sides of the light emitting diode chip 1 are electrically conductive. Each of the conductive adhesives 8 is bonded to the conductors 7b by mechanical bonding so as to perform mechanical fixing and electrical connection.
【００１６】上述のような構造を採用することにより、
発光ダイオードチップ１の電極とカソードリード４とを
接続していたワイヤ５が不要となり、上記のようなワイ
ヤ５の断線や光の利用効率の低下といった不具合を回避
することができる。なお、図示は省略しているが、各導
体７ｂがそれぞれアノードリード２とカソードリード４
に接続されることは言うまでもない。By adopting the above structure,
The wire 5 connecting the electrode of the light emitting diode chip 1 and the cathode lead 4 becomes unnecessary, and the above-mentioned problems such as disconnection of the wire 5 and reduction in light use efficiency can be avoided. Although not shown, each conductor 7b is connected to the anode lead 2 and the cathode lead 4 respectively.
It goes without saying that it is connected to.
【００１７】なお、図４に示すように板状の導体９ａの
表面に酸化膜などから成る絶縁体９ｂを形成し、さらに
その絶縁体９ｂの上に金属薄膜から成り絶縁層９ｃを挟
んで長手方向に並ぶ一対の導体９ｄを層状に形成してリ
ード片９を構成するようにしてもよい。この場合には最
下層の導体９ａと反射板６との間に電圧を印加すること
でリード片９を撓ませるようにすればよい。As shown in FIG. 4, an insulator 9b made of an oxide film or the like is formed on the surface of the plate-like conductor 9a, and a metal thin film is formed on the insulator 9b with a longitudinal direction sandwiching the insulating layer 9c. A pair of conductors 9d arranged in the direction may be formed in a layer shape to form the lead piece 9. In this case, the lead piece 9 may be bent by applying a voltage between the lowermost conductor 9 a and the reflector 6.
【００１８】（実施形態３）実施形態１では発光ダイオ
ードチップ１をリード片３の上面（反射板６と反対側の
面）に接着固定しているが、上述の実施形態２のリード
片９の構造を用いれば、図５に示すように発光ダイオー
ドチップ１をリード片９の下面（反射板６側の面）に接
着固定することが可能となる。(Embodiment 3) In the embodiment 1, the light emitting diode chip 1 is bonded and fixed to the upper surface of the lead piece 3 (the surface opposite to the reflection plate 6). If the structure is used, the light emitting diode chip 1 can be bonded and fixed to the lower surface (the surface on the side of the reflection plate 6) of the lead piece 9 as shown in FIG.
【００１９】例えば、リード片９と反射板６との距離
（間隔）を０．５〔ｍｍ〕、発光ダイオードチップ１の
厚みを０．２〔ｍｍ〕とすれば発光ダイオードチップ１
と反射板６との最短距離は０．３〔ｍｍ〕となる。従っ
て、実施形態１で説明したようにリード片９と反射板６
の間に１０〔Ｖ〕の電圧を印加してリード片９が下方へ
０．２〔ｍｍ〕程度撓めば、撓みによる発光ダイオード
チップ１の変動が６０％以上にもなる。そのため、発光
ダイオードＬＤから１〔ｍ〕離れた距離における配光特
性を周囲に６０〔ｃｍ〕程度も広げることができ、実施
形態１に比較して配光特性の変化幅を大きくすることが
できる。なお、本実施形態では発光ダイオードチップ１
から発せられる光の制御は反射板６によって行われる。For example, if the distance (interval) between the lead piece 9 and the reflector 6 is 0.5 [mm] and the thickness of the light emitting diode chip 1 is 0.2 [mm], the light emitting diode chip 1
The shortest distance between the reflector and the reflector 6 is 0.3 [mm]. Therefore, as described in the first embodiment, the lead piece 9 and the reflection plate 6
If a voltage of 10 [V] is applied during this time and the lead piece 9 bends downward by about 0.2 [mm], the variation of the light emitting diode chip 1 due to the bending becomes 60% or more. Therefore, the light distribution characteristics at a distance of 1 [m] from the light emitting diode LD can be extended by about 60 [cm] to the periphery, and the variation width of the light distribution characteristics can be increased as compared with the first embodiment. . In this embodiment, the light emitting diode chip 1
The control of the light emitted from is performed by the reflector 6.
【００２０】（実施形態４）図６は本実施形態の要部を
示す側面図である。上記実施形態１〜３ではリード片
３，９を上下方向（反射板６に近づく又は遠ざかる方
向）に移動させていたが、本実施形態では反射板６の反
射面６ａに対して略平行な方向（左右方向）にリード片
１０を移動させるようにした点に特徴がある。(Embodiment 4) FIG. 6 is a side view showing a main part of this embodiment. In the first to third embodiments, the lead pieces 3 and 9 are moved in the up and down direction (directions approaching or moving away from the reflection plate 6), but in the present embodiment, directions substantially parallel to the reflection surface 6 a of the reflection plate 6. The feature is that the lead piece 10 is moved in the (left-right direction).
【００２１】本実施形態におけるリード片１０は略Ｌ形
に形成されてリード１１の先端に設けてあり、リード片
１０の先端近傍の外側面に発光ダイオードチップ１が接
着固定されている。一方、反射板６のリード１１側の側
端縁からはリード片１０と略平行に対向する対向片６ａ
が突設されている。The lead piece 10 in this embodiment is formed in a substantially L shape and is provided at the tip of the lead 11, and the light emitting diode chip 1 is bonded and fixed to the outer surface near the tip of the lead piece 10. On the other hand, from the side edge of the reflection plate 6 on the lead 11 side, an opposing piece 6
Is protruding.
【００２２】而して、リード１１と反射板６の間に電圧
を印加すれば、静電力によってリード片１０を左右方向
に撓ませることができる。その結果、リード片１０の先
端近傍に接着固定されている発光ダイオードチップ１と
反射板６との相対的な位置関係を変えて配光特性を変化
させることができる。When a voltage is applied between the lead 11 and the reflector 6, the lead piece 10 can be bent in the left-right direction by electrostatic force. As a result, the light distribution characteristics can be changed by changing the relative positional relationship between the light emitting diode chip 1 and the reflector 6 that are adhered and fixed near the tip of the lead piece 10.
【００２３】[0023]
【発明の効果】請求項１の発明は、発光ダイオードを用
いた光源装置であって、発光ダイオードチップと該発光
ダイオードチップに対向配置される反射板との距離を可
変する可変手段を備えたので、可変手段によって発光ダ
イオードチップと反射板との距離（相対的な位置関係）
を可変し、光の配光特性を簡単な構造で容易に変化させ
ることができるという効果がある。According to the first aspect of the present invention, there is provided a light source device using a light emitting diode, which is provided with a variable means for changing a distance between a light emitting diode chip and a reflecting plate arranged opposite to the light emitting diode chip. The distance between the light emitting diode chip and the reflector by relative means (relative positional relationship)
And the light distribution characteristics of light can be easily changed with a simple structure.
【００２４】また、請求項２の発明では、発光ダイオー
ドチップが取着されたリード片と、導電性を有する反射
板とで上記可変手段を構成し、さらに請求項３の発明で
はリード片を可動自在に形成したので、リード片と反射
板の間に電圧を印加することでリード片と反射板との間
に静電力を作用させ、両者の距離、すなわち発光ダイオ
ードチップと反射板との距離を簡単な構造で容易に可変
することができるという効果がある。According to a second aspect of the present invention, the variable means is constituted by a lead piece on which a light emitting diode chip is mounted and a conductive reflector, and in the third aspect of the invention, the lead piece is movable. Since it was formed freely, an electrostatic force was applied between the lead piece and the reflector by applying a voltage between the lead piece and the reflector, and the distance between them, that is, the distance between the light emitting diode chip and the reflector, was reduced. There is an effect that it can be easily changed by the structure.
【００２５】また、請求項４の発明では、発光ダイオー
ドチップの両電極を導電性接着剤によりリード片に接着
固定し、さらに請求項５の発明では絶縁体と導体とを層
状に重ねて上記リード片を形成したので、発光ダイオー
ドチップの電極を接続するためにワイヤ（金線）を用い
ずに済み、ワイヤにより発光ダイオードチップから発せ
られた光の一部が遮られることが無くなり、光の利用効
率を向上することができるという効果がある。According to a fourth aspect of the present invention, both electrodes of the light emitting diode chip are adhered and fixed to a lead piece with a conductive adhesive. Further, in the fifth aspect of the present invention, an insulator and a conductor are superposed in layers to form the lead. Since the pieces are formed, a wire (gold wire) is not required to connect the electrodes of the light emitting diode chip, and a part of the light emitted from the light emitting diode chip is not blocked by the wire, and the light is used. There is an effect that efficiency can be improved.
【図１】実施形態１を示す要部側面図である。FIG. 1 is a side view of a main part showing a first embodiment.
【図２】同上の配光特性の変化を説明するための説明図
である。FIG. 2 is an explanatory diagram for explaining a change in light distribution characteristics of the above.
【図３】実施形態２の要部を示し、（ａ）はリード片の
平面図、（ｂ）はリード片の側面断面図である。FIGS. 3A and 3B show a main part of a second embodiment, in which FIG. 3A is a plan view of a lead piece, and FIG.
【図４】同上のリード片の他の構造を示し、（ａ）は平
面図、（ｂ）は側面断面図である。4A and 4B show another structure of the lead piece of the above, wherein FIG. 4A is a plan view and FIG. 4B is a side sectional view.
【図５】実施形態３を示す要部側面図である。FIG. 5 is a side view of a main part showing a third embodiment.
【図６】実施形態４を示す要部側面図である。FIG. 6 is a side view of a main part showing a fourth embodiment.
【図７】従来例を示す側面断面図である。FIG. 7 is a side sectional view showing a conventional example.
１ 発光ダイオードチップ ２ アノードリード ３ リード片 ４ カソードリード ５ ワイヤ ６ 反射板 DESCRIPTION OF SYMBOLS 1 Light emitting diode chip 2 Anode lead 3 Lead piece 4 Cathode lead 5 Wire 6 Reflector
───────────────────────────────────────────────────── フロントページの続き (72)発明者 鎌田 策雄 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 小山 昇一 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 朝日 信行 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 鈴木 俊之 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 秋庭 泰史 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 田中 孝司 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 橋爪 二郎 大阪府門真市大字門真1048番地松下電工株 式会社内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Sakuo Kamada 1048, Kazuma, Kadoma, Osaka Prefecture Inside Matsushita Electric Works, Ltd. (72) Inventor Shoichi Koyama 1048, Kazuma, Kazuma, Kadoma, Osaka Prefecture Inside Matsushita Electric Works ( 72) Inventor Nobuyuki Asahi 1048 Kadoma Kadoma, Kadoma City, Osaka Prefecture Inside Matsushita Electric Works, Ltd. 1048 Kadoma-shi Kadoma Matsushita Electric Works Co., Ltd. (72) Inventor Koji Tanaka Osaka Kadoma-shi Kazuno 1048 Matsushita Electric Works Co., Ltd. Within a stock company
Claims (5)
て、発光ダイオードチップと該発光ダイオードチップに
対向配置される反射板との距離を可変する可変手段を備
えたことを特徴とする光源装置。1. A light source device using a light emitting diode, the light source device comprising variable means for changing a distance between a light emitting diode chip and a reflector disposed to face the light emitting diode chip.
ド片と、導電性を有する反射板とで上記可変手段を構成
したことを特徴とする請求項１記載の光源装置。2. The light source device according to claim 1, wherein said variable means is constituted by a lead piece to which a light emitting diode chip is attached and a reflective plate having conductivity.
徴とする請求項２記載の光源装置。3. The light source device according to claim 2, wherein the lead piece is formed to be movable.
接着剤によりリード片に接着固定したことを特徴とする
請求項２又は３記載の光源装置。4. The light source device according to claim 2, wherein both electrodes of the light emitting diode chip are adhered and fixed to the lead piece with a conductive adhesive.
ド片を形成したことを特徴とする請求項４記載の光源装
置。5. The light source device according to claim 4, wherein said lead piece is formed by laminating an insulator and a conductor in layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32363797A JP3543589B2 (en) | 1997-11-25 | 1997-11-25 | Light source device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32363797A JP3543589B2 (en) | 1997-11-25 | 1997-11-25 | Light source device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11163413A true JPH11163413A (en) | 1999-06-18 |
| JP3543589B2 JP3543589B2 (en) | 2004-07-14 |
Family
ID=18156954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32363797A Expired - Fee Related JP3543589B2 (en) | 1997-11-25 | 1997-11-25 | Light source device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3543589B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002374005A (en) * | 2001-04-10 | 2002-12-26 | Toshiba Corp | Optical semiconductor device |
-
1997
- 1997-11-25 JP JP32363797A patent/JP3543589B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002374005A (en) * | 2001-04-10 | 2002-12-26 | Toshiba Corp | Optical semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3543589B2 (en) | 2004-07-14 |
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