JPH11163398A - Led element and its manufacture - Google Patents
Led element and its manufactureInfo
- Publication number
- JPH11163398A JPH11163398A JP32354997A JP32354997A JPH11163398A JP H11163398 A JPH11163398 A JP H11163398A JP 32354997 A JP32354997 A JP 32354997A JP 32354997 A JP32354997 A JP 32354997A JP H11163398 A JPH11163398 A JP H11163398A
- Authority
- JP
- Japan
- Prior art keywords
- led element
- type semiconductor
- led
- surface layer
- led chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ＬＥＤ素子及びそ
の製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an LED device and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】従来のＬＥＤ素子の概略構成図を図６に
示す。ＬＥＤ素子１０は、一方のリードフレーム１２に
ＬＥＤチップ１１を実装し、ＬＥＤチップ１１の電極部
（図示せず）と他方のリードフレーム１２とをボンディ
ングワイヤ１３により電気的に接続し、封止樹脂１４で
封止して形成される。このＬＥＤ素子１０は単色光の発
光素子であり、図７に示すように例えばＬＥＤ素子１
０，１０を基板２０に実装し、各ＬＥＤ素子１０に電流
を流すことによって、ＬＥＤ素子１０が固有の発光色で
発光し、表示用等の用途に使用されていた。2. Description of the Related Art FIG. 6 shows a schematic configuration diagram of a conventional LED element. The LED element 10 has an LED chip 11 mounted on one lead frame 12, and an electrode portion (not shown) of the LED chip 11 and the other lead frame 12 are electrically connected to each other by bonding wires 13. 14 and formed. The LED element 10 is a monochromatic light emitting element. As shown in FIG.
When the LEDs 0 and 10 are mounted on the substrate 20 and a current is passed through each LED element 10, the LED element 10 emits light in a specific emission color, and has been used for display and the like.
【０００３】ところで、ＬＥＤチップ１１は、図８に示
すようにｎ型半導体１１ｂの上面にｐ型半導体１１ａが
積層されており、ｐ型半導体１１ａの上面に上述したボ
ンディングワイヤ１３が接続される電極１１ｃが設けら
れている。ＬＥＤチップ１１はｐｎ接合界面が形成され
た半導体ウェハを縦横に切断することにより略直方体状
に形成されており、ＬＥＤチップ１１の側面にはテーパ
が設けられている。As shown in FIG. 8, the LED chip 11 has a p-type semiconductor 11a laminated on an n-type semiconductor 11b, and an electrode for connecting the bonding wire 13 to the p-type semiconductor 11a. 11c is provided. The LED chip 11 is formed in a substantially rectangular parallelepiped shape by cutting the semiconductor wafer on which the pn junction interface is formed vertically and horizontally, and the side surface of the LED chip 11 is tapered.
【０００４】近年ＬＥＤ素子１０の発光輝度の向上に伴
って、ＬＥＤ素子１０を表示用としてだけではなく、照
明用途に使用することが研究されており、例えば高輝度
のＬＥＤ素子１０を複数並設して構成した面状の照明装
置が提案されている。一般にＬＥＤ素子１０は蛍光灯や
白熱電球などに比べて長寿命であるので、ＬＥＤ素子１
０の交換やメンテナンスが長期間不要になり、高所の照
明や信号機など交換やメンテナンスが困難な用途に適し
ている。また、高輝度のＬＥＤ素子１０では、エネルギ
ー効率が白熱電球の効率を上回るものも開発されてお
り、消費電力の面でも利点がある。In recent years, with the improvement of the light emission luminance of the LED element 10, the use of the LED element 10 not only for display but also for lighting purposes has been studied. For example, a plurality of high-brightness LED elements 10 are arranged in parallel. A planar lighting device configured as described above has been proposed. Generally, the LED element 10 has a longer life than a fluorescent lamp, an incandescent lamp, or the like.
It is not necessary to replace or perform maintenance for a long time, and it is suitable for applications where replacement and maintenance are difficult, such as high-altitude lighting and traffic lights. Further, among the high-brightness LED elements 10, those having an energy efficiency higher than that of an incandescent light bulb have been developed, which has an advantage in terms of power consumption.
【０００５】[0005]
【発明が解決しようとする課題】上記構成のＬＥＤ素子
１０では、ＬＥＤチップ１１が略直方体状に形成されて
おり、表面に角があるので、ＬＥＤチップ１１を実装す
る際に角を破損する虞がある。また、ＬＥＤ素子１０を
実際に使用する際に、ＬＥＤチップ１１と封止樹脂１４
の熱膨張率の違いによって、ＬＥＤチップ１１と封止樹
脂１４との間に熱応力が発生して、封止樹脂１４にクラ
ックが入る虞もあった。また、照明用の光源としては、
発光が全体に分布する点光源や球状の光源の方が利用し
やすいが、ＬＥＤチップ１１は略直方体状に形成されて
いるので、ＬＥＤチップ１１の発光が、ｐｎ接合界面内
の全ての方向に分布しないため照明光源には適さないと
いう問題もあった。In the LED element 10 having the above-described structure, the LED chip 11 is formed in a substantially rectangular parallelepiped shape, and has corners on the surface. Therefore, the corners may be damaged when the LED chip 11 is mounted. There is. When the LED element 10 is actually used, the LED chip 11 and the sealing resin 14 are used.
Due to the difference in the coefficient of thermal expansion, thermal stress is generated between the LED chip 11 and the sealing resin 14, and there is a possibility that the sealing resin 14 is cracked. Also, as a light source for lighting,
A point light source or a spherical light source in which light emission is distributed throughout is easier to use. However, since the LED chip 11 is formed in a substantially rectangular parallelepiped shape, the light emission of the LED chip 11 is emitted in all directions within the pn junction interface. There is also a problem that it is not suitable for an illumination light source because of no distribution.
【０００６】本発明は上記問題点に鑑みて為されたもの
であり、その目的とするところは、照明光源に適した光
の分布が得られる長寿命のＬＥＤ素子を提供することに
ある。[0006] The present invention has been made in view of the above problems, and an object of the present invention is to provide a long-life LED element capable of obtaining a light distribution suitable for an illumination light source.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
に、請求項１の発明では、略球状に形成されたＬＥＤチ
ップの表面にｐ型半導体及びｎ型半導体の給電電極が夫
々形成されており、ＬＥＤチップの表面に角がないの
で、ＬＥＤ素子を実装する際に角が欠けたりして、ＬＥ
Ｄ素子が破損するのを防止でき、ＬＥＤ素子の長寿命化
を図ることができる。しかも、ＬＥＤチップの表面に給
電電極が形成されており、このＬＥＤ素子を基板に直接
実装することができるので、ＬＥＤ素子を封止樹脂で封
止する必要がなく、封止樹脂にクラックが発生すること
がないため、ＬＥＤ素子の長寿命化を図ることができ
る。さらに、ＬＥＤチップが略球状に形成されており、
ｐｎ接合界面からの発光が全体に分布するので、発光光
源として利用しやすくなっている。To achieve the above object, according to the first aspect of the present invention, a power supply electrode of a p-type semiconductor and an n-type semiconductor are formed on the surface of a substantially spherical LED chip. Since there is no corner on the surface of the LED chip, the corner may be missing when mounting the LED element,
The D element can be prevented from being damaged, and the life of the LED element can be extended. In addition, since the power supply electrode is formed on the surface of the LED chip, and the LED element can be directly mounted on the substrate, there is no need to seal the LED element with a sealing resin, and cracks occur in the sealing resin. Therefore, the life of the LED element can be extended. Furthermore, the LED chip is formed in a substantially spherical shape,
Since light emission from the pn junction interface is distributed throughout, it can be easily used as a light source.
【０００８】請求項２の発明では、請求項１の発明にお
いて、ｐｎ接合界面を表面に露出させているので、ｐｎ
接合界面からの発光を効率良く引き出すことができ、し
かもＬＥＤ素子の表面積が増えるので、放熱効果を高め
ることができる。請求項３の発明では、ｐ型半導体又は
ｎ型半導体の内の一方の半導体から略球状の芯部を形成
し、芯部の表面に他方の半導体からなる表面層を形成し
て、略球状のＬＥＤチップを形成し、ＬＥＤチップの一
部を研磨して芯部を露出させ、露出した芯部の部位に一
方の半導体への給電電極を形成するとともに、表面層に
他方の半導体への給電電極を形成しており、略球状のＬ
ＥＤ素子を容易に製造することができる。According to the second aspect of the present invention, since the pn junction interface is exposed on the surface in the first aspect of the present invention, the pn junction is exposed.
Light emission from the bonding interface can be efficiently extracted, and the surface area of the LED element increases, so that the heat radiation effect can be enhanced. According to the invention of claim 3, a substantially spherical core is formed from one of the p-type semiconductor or the n-type semiconductor, and a surface layer made of the other semiconductor is formed on the surface of the core to form a substantially spherical semiconductor. An LED chip is formed, a part of the LED chip is polished to expose a core portion, a power supply electrode to one semiconductor is formed at a portion of the exposed core portion, and a power supply electrode to the other semiconductor is formed on a surface layer. And a substantially spherical L
An ED element can be easily manufactured.
【０００９】請求項４の発明では、請求項３の発明にお
いて、表面層の一部を機械加工により除去して、ｐｎ接
合界面を露出させており、請求項５の発明では、表面層
の一部をエッチングにより除去して、ｐｎ接合界面を露
出させているので、ＬＥＤ素子の表面に容易に溝を形成
することができる。According to a fourth aspect of the present invention, in the third aspect of the present invention, a part of the surface layer is removed by machining to expose the pn junction interface. Since the portion is removed by etching to expose the pn junction interface, a groove can be easily formed on the surface of the LED element.
【００１０】[0010]
【発明の実施の形態】本実施形態のＬＥＤ素子を図１乃
至図５を参照して説明する。このＬＥＤ素子１０は、ｎ
型半導体よりなる略球状の芯部１、及び、芯部１の表面
に形成されたｐ型半導体よりなる表面層２とから構成さ
れる略球状のＬＥＤチップ７と、ＬＥＤチップ７の一部
を研磨して形成された平面部３に露出する芯部１の部位
に設けられたｎ型半導体への給電電極４と、表面層２の
表面に設けられたｐ型半導体への給電電極５と、ｐｎ接
合界面を露出させるために表面層２の一部に形成された
溝６とから構成される。DESCRIPTION OF THE PREFERRED EMBODIMENTS An LED device according to the present embodiment will be described with reference to FIGS. This LED element 10 has n
A substantially spherical LED chip 7 composed of a substantially spherical core 1 made of a mold semiconductor, and a surface layer 2 made of a p-type semiconductor formed on the surface of the core 1, and a part of the LED chip 7; A power supply electrode 4 for the n-type semiconductor provided on the portion of the core 1 exposed on the planar portion 3 formed by polishing, a power supply electrode 5 for the p-type semiconductor provided on the surface of the surface layer 2, and a groove 6 formed in a part of the surface layer 2 to expose the pn junction interface.
【００１１】ここで、ＬＥＤ素子１０は、給電電極４，
５間に順方向電流を流すことによってｐｎ接合界面から
発光し、その光は溝６から外部に放射される。尚、溝６
を形成することによって、ｐｎ接合界面からの発光を効
率良く引き出すことができ、しかもＬＥＤ素子１０の表
面積が増加するので、放熱効果が高まる。このＬＥＤ素
子１０の製造方法を図１（ａ）〜（ｄ）を参照して説明
する。まず、ｎ型半導体を溶融又は研磨して、図１
（ａ）に示すようなｎ型半導体よりなる略球状の芯部１
を形成した後、図１（ｂ）に示すように、この芯部１の
表面２に、例えばＣＶＤ法（化学気相成長法）を用い
て、ｐ型半導体よりなる表面層２を形成して、略球状の
ＬＥＤチップ７を形成する。次に、図１（ｃ）に示すよ
うに、ＬＥＤチップ７の一部を研磨して平面部３を設
け、この平面部３から内側の芯部１を表面に露出させ
る。そして、図１（ｄ）に示すように、平面部３に露出
した芯部１の部位に、ｎ型半導体への給電電極４を形成
し、表面層２の表面にｐ型半導体への給電電極５を形成
する。尚、給電電極５は、例えばスパッタリングにより
表面層２の表面に導電性材料よりなる薄膜を形成した
後、エッチングによって給電電極５以外の薄膜の部位を
除去することにより形成される。Here, the LED element 10 includes a power supply electrode 4
Light is emitted from the pn junction interface by flowing a forward current between the light-emitting elements 5, and the light is emitted to the outside from the groove 6. The groove 6
Is formed, light emission from the pn junction interface can be efficiently extracted, and the surface area of the LED element 10 increases, so that the heat radiation effect increases. A method for manufacturing the LED element 10 will be described with reference to FIGS. First, an n-type semiconductor is melted or polished to obtain
A substantially spherical core 1 made of an n-type semiconductor as shown in FIG.
Is formed, a surface layer 2 made of a p-type semiconductor is formed on the surface 2 of the core 1 by using, for example, a CVD method (chemical vapor deposition), as shown in FIG. , A substantially spherical LED chip 7 is formed. Next, as shown in FIG. 1C, a part of the LED chip 7 is polished to provide a flat part 3, and the inner core part 1 is exposed from the flat part 3 to the surface. Then, as shown in FIG. 1 (d), a power supply electrode 4 for the n-type semiconductor is formed on the portion of the core 1 exposed on the plane portion 3, and a power supply electrode for the p-type semiconductor is formed on the surface of the surface layer 2. 5 is formed. The power supply electrode 5 is formed by, for example, forming a thin film made of a conductive material on the surface of the surface layer 2 by sputtering, and then removing a portion of the thin film other than the power supply electrode 5 by etching.
【００１２】ここで、溝６は以下の方法により形成され
る。図４（ａ）（ｂ）に示すように、交差線上にＬＥＤ
チップ７を配置した互いに直交する２つの平面内に、そ
れぞれ、ＬＥＤチップ７を挟んで２枚の回転ブレード３
０の回転面を配置する。そして、回転する各回転ブレー
ド３０の間にＬＥＤチップ７を通過させることにより、
回転ブレード３０の円周部に設けられた刃でＬＥＤチッ
プ７の表面層２を削って溝６を形成し、溝６からＬＥＤ
チップ７のｐｎ接合界面を露出させる。Here, the groove 6 is formed by the following method. As shown in FIGS. 4 (a) and 4 (b), the LED
Each of the two rotating blades 3 sandwiching the LED chip 7 in two planes orthogonal to each other on which the chip 7 is disposed.
0 rotation plane is arranged. Then, by passing the LED chip 7 between the rotating blades 30 that rotate,
A groove 6 is formed by shaving the surface layer 2 of the LED chip 7 with a blade provided on a circumferential portion of the rotating blade 30.
The pn junction interface of the chip 7 is exposed.
【００１３】また、溝６を形成する方法としては、表面
層２の一部をエッチングして溝６を形成する方法もあ
る。まず、ｐｎ接合が形成されたＬＥＤチップ７の表面
層２に、レジストを吹き付けたり、ＬＥＤチップ７を転
がしたりすることによって、所要の厚みの均一なレジス
トを形成して、ベークする。次に、レーザーによる描画
や、略球面状の表面層２に光を投射することによって生
じる誤差を補正した平面マスクを用いて露光し、有機溶
剤等で不要なレジストを除去し、所望のレジストパター
ンを得る。その後、エッチングを行い、表面層２の一部
を除去して溝６を形成し、溝６からＬＥＤチップ７のｐ
ｎ接合界面を露出させる。尚、レジストパターンを所望
の形状に形成することにより、図５（ａ）に示す筋状の
溝６や、図５（ｂ）に示す略円形の溝６’を形成するこ
とができる。As a method of forming the groove 6, there is a method of forming the groove 6 by etching a part of the surface layer 2. First, a resist is sprayed on the surface layer 2 of the LED chip 7 on which the pn junction is formed, or the LED chip 7 is rolled to form a uniform resist having a required thickness and is baked. Next, exposure is performed using a plane mask in which an error caused by drawing with a laser or projecting light on the substantially spherical surface layer 2 is corrected, unnecessary resist is removed with an organic solvent or the like, and a desired resist pattern is formed. Get. After that, etching is performed to remove a part of the surface layer 2 to form a groove 6, and the p of the LED chip 7 is
Exposing the n-junction interface. By forming the resist pattern into a desired shape, it is possible to form the streak-shaped groove 6 shown in FIG. 5A and the substantially circular groove 6 'shown in FIG. 5B.
【００１４】図２（ａ）〜（ｃ）は、このＬＥＤ素子１
０を基板２０上に実装した状態を示している。基板２０
の表面には、略円形の実装部２１ａが端部に設けられた
導体パターン２１と、略Ｔ字状の導体パターン２２とが
形成されている。そして、導体パターン２１、２２の導
電電極４、５が実装される部位に半田ペーストを印刷
し、導体パターン２１、２２に夫々導電電極４、５を接
触させた状態で、リフローはんだ付け法により半田ペー
ストを溶融させて、導電電極４、５を半田２３により夫
々導体パターン２１、２２に半田付けする。FIGS. 2 (a) to 2 (c) show this LED element 1.
0 is mounted on the substrate 20. Substrate 20
A conductor pattern 21 having a substantially circular mounting portion 21a provided at an end thereof, and a substantially T-shaped conductor pattern 22 are formed on the surface of the substrate. Then, solder paste is printed on the portions of the conductor patterns 21 and 22 where the conductive electrodes 4 and 5 are to be mounted, and the conductive electrodes 4 and 5 are brought into contact with the conductor patterns 21 and 22, respectively. The paste is melted, and the conductive electrodes 4 and 5 are soldered to the conductor patterns 21 and 22 by solder 23, respectively.
【００１５】上述のように、本実施形態のＬＥＤ素子１
０は略球状に形成されており、表面に角がないので、Ｌ
ＥＤ素子１０を実装する際に角が破損することがなく、
ＬＥＤ素子１０の長寿命化を図ることができる。また、
ＬＥＤ素子１０は基板２０の表面に直接実装されてお
り、従来のＬＥＤ素子１０のように封止樹脂１４で封止
されていないので、ＬＥＤ素子１０と封止樹脂１４との
熱膨張率の差によって生じる熱応力により、封止樹脂１
４にクラックが発生することがなく、ＬＥＤ素子の寿命
を伸ばすことができる。また、ＬＥＤ素子１０は略球状
に形成されており、その発光が全体に分布するので、照
明用途に適した光の分布を得ることができる。As described above, the LED element 1 of the present embodiment
0 is formed in a substantially spherical shape and has no corners on its surface.
When mounting the ED element 10, the corner is not damaged,
The life of the LED element 10 can be extended. Also,
Since the LED element 10 is directly mounted on the surface of the substrate 20 and is not sealed with the sealing resin 14 unlike the conventional LED element 10, the difference in the thermal expansion coefficient between the LED element 10 and the sealing resin 14 is obtained. Sealing resin 1
No crack is generated in the LED element 4, and the life of the LED element can be extended. Further, the LED element 10 is formed in a substantially spherical shape, and its light emission is distributed throughout, so that a light distribution suitable for lighting applications can be obtained.
【００１６】尚、本実施形態では、芯部１をｎ型半導体
から形成し、表面層２をｐ型半導体から形成している
が、これとは逆に、芯部１をｐ型半導体から形成し、表
面層２をｎ型半導体から形成しても良い。In the present embodiment, the core 1 is formed from an n-type semiconductor and the surface layer 2 is formed from a p-type semiconductor. Conversely, the core 1 is formed from a p-type semiconductor. Alternatively, the surface layer 2 may be formed from an n-type semiconductor.
【００１７】[0017]
【発明の効果】上述のように、請求項１の発明は、略球
状に形成されたＬＥＤチップの表面にｐ型半導体及びｎ
型半導体の給電電極が夫々形成されており、ＬＥＤチッ
プの表面に角がないので、ＬＥＤ素子を実装する際に角
が欠けたりして、ＬＥＤ素子が破損するのを防止でき、
ＬＥＤ素子の長寿命化が図れるという効果がある。しか
も、ＬＥＤチップの表面に給電電極が形成されており、
このＬＥＤ素子を基板に直接実装することができるの
で、ＬＥＤ素子を封止樹脂で封止する必要がなく、封止
樹脂にクラックが発生することがないため、ＬＥＤ素子
の長寿命化が図れるという効果がある。さらに、ＬＥＤ
チップが略球状に形成されており、ｐｎ接合界面からの
発光が全体に分布するので、発光光源として利用しやす
くなるという効果がある。As described above, according to the first aspect of the present invention, a p-type semiconductor and an n-type semiconductor are provided on the surface of a substantially spherical LED chip.
Since the power supply electrodes of the mold semiconductor are formed respectively and there is no corner on the surface of the LED chip, it is possible to prevent the LED element from being damaged due to chipping of the corner when mounting the LED element,
This has the effect of extending the life of the LED element. Moreover, a power supply electrode is formed on the surface of the LED chip,
Since the LED element can be directly mounted on the substrate, it is not necessary to seal the LED element with a sealing resin, and no crack is generated in the sealing resin, so that the life of the LED element can be extended. effective. Furthermore, LED
Since the chip is formed in a substantially spherical shape and light emission from the pn junction interface is distributed over the whole, there is an effect that the chip can be easily used as a light emission light source.
【００１８】請求項２の発明は、ｐｎ接合界面を表面に
露出させているので、ｐｎ接合界面からの発光を効率良
く引き出すことができ、しかもＬＥＤ素子の表面積が増
えるので、放熱効果を高めることができるという効果が
ある。請求項３の発明は、ｐ型半導体又はｎ型半導体の
内の一方の半導体から略球状の芯部を形成し、芯部の表
面に他方の半導体からなる表面層を形成して、略球状の
ＬＥＤチップを形成し、ＬＥＤチップの一部を研磨して
芯部を露出させ、露出した芯部の部位に一方の半導体へ
の給電電極を形成するとともに、表面層に他方の半導体
への給電電極を形成しており、略球状のＬＥＤ素子を容
易に製造できるという効果がある。According to the second aspect of the present invention, since the pn junction interface is exposed on the surface, light emission from the pn junction interface can be efficiently extracted, and the surface area of the LED element increases, so that the heat radiation effect is improved. There is an effect that can be. According to a third aspect of the present invention, a substantially spherical core portion is formed from one of the p-type semiconductor and the n-type semiconductor, and a surface layer made of the other semiconductor is formed on the surface of the core portion. An LED chip is formed, a part of the LED chip is polished to expose a core portion, a power supply electrode to one semiconductor is formed at a portion of the exposed core portion, and a power supply electrode to the other semiconductor is formed on a surface layer. Is formed, and there is an effect that a substantially spherical LED element can be easily manufactured.
【００１９】請求項４の発明は、表面層の一部を機械加
工により除去して、ｐｎ接合界面を露出させており、請
求項５の発明は、表面層の一部をエッチングにより除去
して、ｐｎ接合界面を露出させているので、ＬＥＤ素子
の表面に容易に溝を形成できるという効果がある。According to a fourth aspect of the present invention, a part of the surface layer is removed by machining to expose the pn junction interface. A fifth aspect of the present invention is to remove a part of the surface layer by etching. Since the pn junction interface is exposed, there is an effect that a groove can be easily formed on the surface of the LED element.
【図１】（ａ）〜（ｄ）は本実施形態のＬＥＤ素子の各
製造工程を示す図である。1 (a) to 1 (d) are views showing respective manufacturing steps of an LED element of the present embodiment.
【図２】同上のＬＥＤ素子の実装状態を示し、（ａ）は
実装パターンを示す斜視図、（ｂ）はＬＥＤ素子の実装
状態を示す斜視図、（ｃ）はＬＥＤ素子の実装状態を示
す断面図である。2A and 2B show a mounting state of the LED element, in which FIG. 2A is a perspective view showing a mounting pattern, FIG. 2B is a perspective view showing a mounting state of the LED element, and FIG. It is sectional drawing.
【図３】同上のＬＥＤ素子のｐｎ界面を露出した状態を
示す斜視図である。FIG. 3 is a perspective view showing a state where a pn interface of the LED element is exposed.
【図４】（ａ）（ｂ）は同上のＬＥＤ素子の加工方法を
示す図である。FIGS. 4 (a) and 4 (b) are views showing a method of processing the LED element according to the first embodiment.
【図５】（ａ）（ｂ）は同上のＬＥＤ素子のｐｎ界面を
露出した状態を示す斜視図である。FIGS. 5A and 5B are perspective views showing a state in which a pn interface of the LED device is exposed.
【図６】従来のＬＥＤ素子を示す断面図である。FIG. 6 is a sectional view showing a conventional LED element.
【図７】同上のＬＥＤ素子の実装状態を示す斜視図であ
る。FIG. 7 is a perspective view showing a mounting state of the LED element according to the embodiment.
【図８】同上のＬＥＤ素子のＬＥＤチップを示す斜視図
である。FIG. 8 is a perspective view showing an LED chip of the LED element of the above.
１ 芯部 ２ 表面層 ３ 平面部 ４，５ 給電電極 １０ ＬＥＤ素子 DESCRIPTION OF SYMBOLS 1 Core part 2 Surface layer 3 Flat part 4,5 Power supply electrode 10 LED element
───────────────────────────────────────────────────── フロントページの続き (72)発明者 朝日 信行 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 鈴木 俊之 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 秋庭 泰史 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 田中 孝司 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 塩浜 英二 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 杉本 勝 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 山本 正平 大阪府門真市大字門真1048番地松下電工株 式会社内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Nobuyuki Asahi 1048 Kadoma Kadoma, Osaka Pref.Matsushita Electric Works, Ltd. 72) Inventor Yasushi Akiba 1048 Kazumasa Kadoma, Osaka Prefecture Inside Matsushita Electric Works Co., Ltd. 1048 Kadoma Kadoma, Matsushita Electric Works, Ltd. (72) Inventor Masaru Sugimoto, Kazuma, Kazuma, Osaka 1048 Matsushita Electric Works, Ltd. Within a stock company
Claims (5)
ｐ型半導体及びｎ型半導体の給電電極が夫々形成された
ことを特徴とするＬＥＤ素子。1. An LED device wherein a p-type semiconductor and an n-type semiconductor power supply electrode are respectively formed on the surface of a substantially spherical LED chip.
徴とする請求項１記載のＬＥＤ素子。2. The LED device according to claim 1, wherein the pn junction interface is exposed on the surface.
導体から略球状の芯部を形成し、芯部の表面に他方の半
導体からなる表面層を形成して、略球状のＬＥＤチップ
を形成し、ＬＥＤチップの一部を研磨して芯部を露出さ
せ、露出した芯部の部位に一方の半導体への給電電極を
形成するとともに、表面層に他方の半導体への給電電極
を形成したことを特徴とするＬＥＤ素子の製造方法。3. A substantially spherical LED chip, wherein a substantially spherical core is formed from one of the p-type semiconductor or the n-type semiconductor, and a surface layer made of the other semiconductor is formed on the surface of the core. Is formed, and a portion of the LED chip is polished to expose the core portion. A power supply electrode to one semiconductor is formed at the exposed portion of the core portion, and a power supply electrode to the other semiconductor is formed on the surface layer. A method for manufacturing an LED element, comprising:
ｐｎ接合界面を露出させたことを特徴とする請求項３記
載のＬＥＤ素子の製造方法。4. A part of the surface layer is removed by machining.
The method according to claim 3, wherein the pn junction interface is exposed.
て、ｐｎ接合界面を露出させたことを特徴とする請求項
３記載のＬＥＤ素子の製造方法。5. The method according to claim 3, wherein a part of the surface layer is removed by etching to expose a pn junction interface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32354997A JP3310605B2 (en) | 1997-11-25 | 1997-11-25 | LED element and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32354997A JP3310605B2 (en) | 1997-11-25 | 1997-11-25 | LED element and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11163398A true JPH11163398A (en) | 1999-06-18 |
| JP3310605B2 JP3310605B2 (en) | 2002-08-05 |
Family
ID=18155948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32354997A Expired - Fee Related JP3310605B2 (en) | 1997-11-25 | 1997-11-25 | LED element and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3310605B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003209295A (en) * | 2002-01-16 | 2003-07-25 | Sony Corp | Electronic component, manufacturing method therefor and image display device using the same |
| JP2005039230A (en) * | 2003-07-01 | 2005-02-10 | Matsushita Electric Ind Co Ltd | Mounted assembly, optical transmission line, and photoelectric circuit board |
| CN102931307A (en) * | 2012-11-06 | 2013-02-13 | 华东理工大学 | Light-emitting diode (LED) device |
| CN113707787A (en) * | 2020-05-22 | 2021-11-26 | 重庆康佳光电技术研究院有限公司 | Spherical inverted micro LED, manufacturing method thereof and display panel |
-
1997
- 1997-11-25 JP JP32354997A patent/JP3310605B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003209295A (en) * | 2002-01-16 | 2003-07-25 | Sony Corp | Electronic component, manufacturing method therefor and image display device using the same |
| JP2005039230A (en) * | 2003-07-01 | 2005-02-10 | Matsushita Electric Ind Co Ltd | Mounted assembly, optical transmission line, and photoelectric circuit board |
| JP4510532B2 (en) * | 2003-07-01 | 2010-07-28 | パナソニック株式会社 | Mounted body, optical transmission line and photoelectric circuit board |
| CN102931307A (en) * | 2012-11-06 | 2013-02-13 | 华东理工大学 | Light-emitting diode (LED) device |
| CN113707787A (en) * | 2020-05-22 | 2021-11-26 | 重庆康佳光电技术研究院有限公司 | Spherical inverted micro LED, manufacturing method thereof and display panel |
| CN113707787B (en) * | 2020-05-22 | 2023-07-18 | 重庆康佳光电技术研究院有限公司 | Spherical flip-chip micro LED, manufacturing method thereof and display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3310605B2 (en) | 2002-08-05 |
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