JPH11150198A - 不揮発性メモリ及び電子機器 - Google Patents
不揮発性メモリ及び電子機器Info
- Publication number
- JPH11150198A JPH11150198A JP9333453A JP33345397A JPH11150198A JP H11150198 A JPH11150198 A JP H11150198A JP 9333453 A JP9333453 A JP 9333453A JP 33345397 A JP33345397 A JP 33345397A JP H11150198 A JPH11150198 A JP H11150198A
- Authority
- JP
- Japan
- Prior art keywords
- region
- pinning
- impurity
- drain
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000003860 storage Methods 0.000 title abstract description 9
- 230000015654 memory Effects 0.000 claims description 82
- 239000012535 impurity Substances 0.000 claims description 37
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 7
- 230000000694 effects Effects 0.000 abstract description 34
- 230000000452 restraining effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 26
- 238000010586 diagram Methods 0.000 description 14
- 239000000758 substrate Substances 0.000 description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000000969 carrier Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 5
- 239000002784 hot electron Substances 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052795 boron group element Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052696 pnictogen Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9333453A JPH11150198A (ja) | 1997-11-18 | 1997-11-18 | 不揮発性メモリ及び電子機器 |
| US09/192,745 US6686623B2 (en) | 1997-11-18 | 1998-11-16 | Nonvolatile memory and electronic apparatus |
| US10/694,477 US7535053B2 (en) | 1997-11-18 | 2003-10-27 | Nonvolatile memory and electronic apparatus |
| US12/427,140 US8222696B2 (en) | 1997-11-18 | 2009-04-21 | Semiconductor device having buried oxide film |
| US13/549,914 US8482069B2 (en) | 1997-11-18 | 2012-07-16 | Nonvolatile memory and electronic apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9333453A JPH11150198A (ja) | 1997-11-18 | 1997-11-18 | 不揮発性メモリ及び電子機器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11150198A true JPH11150198A (ja) | 1999-06-02 |
| JPH11150198A5 JPH11150198A5 (https=) | 2005-06-23 |
Family
ID=18266262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9333453A Withdrawn JPH11150198A (ja) | 1997-11-18 | 1997-11-18 | 不揮発性メモリ及び電子機器 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11150198A (https=) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002100690A (ja) * | 2000-07-21 | 2002-04-05 | Semiconductor Energy Lab Co Ltd | 不揮発性メモリ及び半導体装置 |
| US6724037B2 (en) | 2000-07-21 | 2004-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile memory and semiconductor device |
| CN103903952A (zh) * | 2012-12-27 | 2014-07-02 | 三菱综合材料株式会社 | 等离子蚀刻装置用硅部件及其制造方法 |
-
1997
- 1997-11-18 JP JP9333453A patent/JPH11150198A/ja not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002100690A (ja) * | 2000-07-21 | 2002-04-05 | Semiconductor Energy Lab Co Ltd | 不揮発性メモリ及び半導体装置 |
| US6724037B2 (en) | 2000-07-21 | 2004-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile memory and semiconductor device |
| US6885059B2 (en) | 2000-07-21 | 2005-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile memory and semiconductor device |
| CN103903952A (zh) * | 2012-12-27 | 2014-07-02 | 三菱综合材料株式会社 | 等离子蚀刻装置用硅部件及其制造方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6686623B2 (en) | Nonvolatile memory and electronic apparatus | |
| US7915666B2 (en) | Nonvolatile semiconductor memory devices with charge injection corner | |
| TW589734B (en) | Nonvolatile semiconductor memory device | |
| US20070272974A1 (en) | Twin-gate non-volatile memory cell and method of operating the same | |
| JP2005252034A (ja) | 不揮発性半導体メモリ装置とその電荷注入方法、および、電子装置 | |
| US7544993B2 (en) | Semiconductor storage device and portable electronic equipment | |
| US7566928B2 (en) | Byte-operational nonvolatile semiconductor memory device | |
| CN100382322C (zh) | 半导体存储器件和便携式电子装置 | |
| JP2004134799A (ja) | 単一ビット不揮発性メモリーセル、および、その書き込み方法および消去方法 | |
| JP2010108976A (ja) | 半導体装置およびその製造方法 | |
| US6724037B2 (en) | Nonvolatile memory and semiconductor device | |
| JPH11150198A (ja) | 不揮発性メモリ及び電子機器 | |
| JPH11163171A (ja) | 不揮発性メモリ及び電子機器 | |
| JP4361145B2 (ja) | 不揮発性メモリ及び電子機器 | |
| JPH08125043A (ja) | 不揮発性半導体記憶装置及びその製造方法 | |
| JP2006222367A (ja) | 不揮発性半導体メモリ装置、駆動方法、及び製造方法 | |
| JP4854375B2 (ja) | 半導体記憶装置及びその製造方法、並びに携帯電子機器 | |
| JP4013750B2 (ja) | 不揮発性半導体記憶装置 | |
| US8077512B2 (en) | Flash memory cell and method for operating the same | |
| JP4919549B2 (ja) | 不揮発性メモリ及び半導体装置 | |
| JP2006108668A (ja) | 不揮発性メモリ素子とその製造方法 | |
| JP2006196686A (ja) | 半導体記憶装置及びその製造方法並びに携帯電子機器 | |
| JP2004179475A (ja) | 不揮発性半導体記憶装置及びその製造方法 | |
| JP2012209336A (ja) | フィン型不揮発性メモリ素子 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20041001 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20041001 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050412 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20071120 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080118 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20080219 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20080303 |