JPH11145317A - Package for optical semiconductor device and optical semiconductor module - Google Patents

Package for optical semiconductor device and optical semiconductor module

Info

Publication number
JPH11145317A
JPH11145317A JP30517297A JP30517297A JPH11145317A JP H11145317 A JPH11145317 A JP H11145317A JP 30517297 A JP30517297 A JP 30517297A JP 30517297 A JP30517297 A JP 30517297A JP H11145317 A JPH11145317 A JP H11145317A
Authority
JP
Japan
Prior art keywords
optical semiconductor
package
side frame
terminal member
ceramic terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP30517297A
Other languages
Japanese (ja)
Inventor
Nobuyoshi Tato
伸好 田遠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP30517297A priority Critical patent/JPH11145317A/en
Publication of JPH11145317A publication Critical patent/JPH11145317A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a package and an optical semiconductor module to offer a package form which can be formed, even by omitting the dimension control around a ceramics terminal parts material, also simplifying the forming process of the package by eliminating the junction parts of the side frame materials, suppressing the generation of thermal distortion. SOLUTION: In a package, a vessel in which a photosemiconductor device is stored is formed by a side frame member 2, including a front frame part 2a provided with a means for connecting a metal board 1 and a optical fiber, and a part of the side frame member 2 is formed by a ceramics terminal member 3 having more than two layers of coating formed with metallized wiring 3c. Then, by holding the bottom face of the ceramics terminal member 3 to the side frame terminal member 2, the surface to a seal ring 5, one side of the longitudinal direction to the front frame part 2a, and by having the side frame member 2 abut so that the other side is made a free side or both sides are made free sides, each terminal member is jointed.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、光半導体素子を収
納するための容器に関するものである。より詳しくは、
CATVなどの高速・低ノイズで作動させることが必要
な光素子や半導体ICを搭載し、温度制御用の電子冷却
素子を必須としている光ファイバー増幅器や励起用光源
を収納する容器とモジュールに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a container for housing an optical semiconductor device. More specifically,
The present invention relates to a container and a module for housing an optical fiber amplifier or an excitation light source which is equipped with an optical element such as a CATV or the like which needs to operate at high speed and with low noise and a semiconductor IC, and which requires an electronic cooling element for temperature control.

【0002】[0002]

【従来の技術】従来、光半導体素子を収納するための光
半導体用パッケージは、中央上面に光半導体素子が載置
されるエリアを有する銅−タングステン合金から成る金
属基板と、前記光半導体素子載置エリアを囲繞する鉄−
ニッケル−コバルト系合金や鉄−ニッケル系合金から成
る側枠部材が金属基板上に鑞付けされ、前枠部に光ファ
イバーを固定する手段と、外部リード線が接続されるメ
タライズ配線層を有するセラミックス端子部材が側枠部
材に嵌装され、上部には光半導体素子を気密に封止する
金属枠体となるシールリングを鑞付けして構成されてい
る。
2. Description of the Related Art Conventionally, an optical semiconductor package for accommodating an optical semiconductor element has a metal substrate made of a copper-tungsten alloy having an area for mounting the optical semiconductor element on a central upper surface; Iron surrounding the storage area
A ceramic terminal having means for fixing an optical fiber to a front frame part by brazing a side frame member made of a nickel-cobalt alloy or an iron-nickel alloy on a metal substrate, and a metallized wiring layer to which external lead wires are connected A member is fitted to the side frame member, and a seal ring serving as a metal frame body for hermetically sealing the optical semiconductor element is brazed on the upper portion.

【0003】そして、金属基板の光半導体素子載置エリ
アに光半導体素子を接着固定すると共に、光半導体素子
の各電極をボンディングワイヤを介して外部リード線が
接続されているメタライズ配線層に結線し、次に前枠部
の光ファイバー固定リングにレーザー光線の照射による
YAG熔接によって光ファイバーを接合させ、最後にシ
ールリングの上面にカバーを被せて密封し、ユニットと
しての光半導体モジュールとして完成するのが一般的で
ある。
The optical semiconductor element is bonded and fixed to the optical semiconductor element mounting area of the metal substrate, and each electrode of the optical semiconductor element is connected to a metallized wiring layer to which an external lead wire is connected via a bonding wire. Then, the optical fiber is bonded to the optical fiber fixing ring of the front frame portion by YAG welding by irradiating a laser beam, and finally, a cover is put on the upper surface of the seal ring and sealed, thereby completing an optical semiconductor module as a unit. It is.

【0004】光半導体用パッケージとして要求される主
要な機能は、光信号と電気信号とを相互に変換する際の
発熱量を効率的に放熱することと、パッケージの熱歪み
により光ファイバーと光半導体素子の光軸がずれないよ
うなパッケージの構造とすることである。発熱量を効率
的に放熱するためには、光半導体素子のマウントベース
の下に熱ポンプである電子冷却素子としてのペルチェ素
子を配置したり、パッケージの構成部材に熱伝導率の高
い材料を採用するのは周知の技術である。
The main functions required of an optical semiconductor package are to efficiently dissipate the heat generated when an optical signal and an electric signal are converted into each other, and to provide an optical fiber and an optical semiconductor element due to thermal distortion of the package. The package structure is such that the optical axis does not shift. To efficiently dissipate the heat generated, a Peltier element as an electronic cooling element, which is a heat pump, is placed under the mount base of the optical semiconductor element, and a material with high thermal conductivity is used for the components of the package. This is a well-known technique.

【0005】熱歪みを防ぐパッケージの構造としては、
特開平6−314747号公報に示す構造が提案されて
いる。この構造を図13で説明すると、101は、光半
導体素子106が載置されるマウントベース101aを
有する金属基板である。光半導体素子載置エリアを囲繞
する側枠部材102が金属基板上に鑞付けされている。
側枠部材102の寸法Yの内側に、外部リード線が接続
されるメタライズ配線層を有するセラミックス部材端子
103が嵌装され、上部に光半導体素子106を気密に
するシールリング104が接合されている。
[0005] As a package structure for preventing thermal distortion,
A structure disclosed in Japanese Patent Application Laid-Open No. 6-314747 has been proposed. This structure will be described with reference to FIG. 13. Reference numeral 101 denotes a metal substrate having a mount base 101a on which the optical semiconductor element 106 is mounted. A side frame member 102 surrounding the optical semiconductor element mounting area is brazed on a metal substrate.
A ceramic member terminal 103 having a metallized wiring layer to which an external lead wire is connected is fitted inside the dimension Y of the side frame member 102, and a seal ring 104 for hermetically sealing the optical semiconductor element 106 is joined to the upper part. .

【0006】マウントベース101a上に接着固定され
た光半導体素子106の各電極には、外部リード線の接
続されているメタライズ配線層108がボンディングワ
イヤ107を介して結線される。前枠部109の光ファ
イバー固定リング110にレーザー光線の照射によるY
AG熔接によって光ファイバー111を固定する。パッ
ケージ内の気密を保つために、カバー112が鑞付けさ
れ、光半導体モジュールとして完成する。
A metallized wiring layer 108 to which an external lead wire is connected is connected via a bonding wire 107 to each electrode of the optical semiconductor element 106 bonded and fixed on the mount base 101a. Irradiation of the laser beam onto the optical fiber fixing ring 110 of the front frame 109 causes Y
The optical fiber 111 is fixed by AG welding. In order to maintain the airtightness in the package, the cover 112 is brazed to complete the optical semiconductor module.

【0007】以上のようにして構成したパッケージは、
金属基板101の内マウントベース101aの厚さをX
とし、両端取付け部の厚さをTとした時、1.0≧T≧
0.3mm、且つ、X≧2Tとすればパッケージの熱歪
みを抑えることができると説明している。
The package configured as described above is
The thickness of the inner mount base 101a of the metal substrate 101 is X
When the thickness of the mounting portion at both ends is T, 1.0 ≧ T ≧
It is described that if 0.3 mm and X ≧ 2T, thermal distortion of the package can be suppressed.

【0008】[0008]

【発明が解決しようとする課題】図13に示す従来のパ
ッケージの構造では、セラミックス端子部材を側枠部材
の内側寸法Y内に嵌装する形態であるため、長手方向に
は焼成の際に収縮し易いセラミックスの特性に合致させ
て側枠部材の内側寸法Yの精度を管理する必要がある
が、セラミックス端子部材の巾が過大であれば、研磨や
ダイシング切断等の高価な加工工程が必要となる。セラ
ミックス端子部材の巾が過小であれば、接合時に余分の
鑞材を注入せねばならず熱容量のバランスを崩し、熱歪
みの原因となり易い。
In the structure of the conventional package shown in FIG. 13, since the ceramic terminal member is fitted within the inner dimension Y of the side frame member, it shrinks in the longitudinal direction during firing. It is necessary to control the accuracy of the inner dimension Y of the side frame member in accordance with the characteristics of the ceramic which is easy to perform, but if the width of the ceramic terminal member is too large, expensive processing steps such as polishing and dicing cutting are required. Become. If the width of the ceramic terminal member is too small, an extra brazing material must be injected at the time of joining, which breaks the balance of heat capacity and tends to cause thermal distortion.

【0009】そこで本発明では、セラミックス端子部材
周辺の厳密な寸法管理を省いても成立するパッケージの
形態を提案すると共に、側枠部材の接合箇所を極力省い
てパッケージの形成工程を単純化し、熱歪みの発生を抑
えたパッケージと光半導体モジュールを提供する。
In view of the above, the present invention proposes a package form that can be realized even without strict dimensional control around the ceramic terminal member, and simplifies the package forming process by minimizing the joints of the side frame members, thereby reducing the heat generation. Provided are a package and an optical semiconductor module in which generation of distortion is suppressed.

【0010】[0010]

【課題を解決するための手段】光半導体素子を搭載する
金属基板と、セラミックス端子部材を支持し光ファイバ
ーを接続する手段を有する側枠部材と、封止カバーとか
ら成る光半導体素子を収納するパッケージであって、前
記セラミックス端子部材の長手方向の少なくとも一方の
端部面が前記側枠部材に拘束されない自由端として接合
すれば、前記セラミックス端子部材周辺の厳密な寸法管
理の不要なパッケージを得る。
A package for housing an optical semiconductor element comprising a metal substrate on which an optical semiconductor element is mounted, a side frame member having means for supporting a ceramic terminal member and connecting an optical fiber, and a sealing cover. If at least one end face in the longitudinal direction of the ceramic terminal member is joined as a free end that is not restrained by the side frame member, a package that does not require strict size control around the ceramic terminal member is obtained.

【0011】前記パッケージにおいて、セラミックス端
子部材の上面は金属シール部材に当接してもよいし、上
面と下面が側枠部材の切欠部に当接するように構成すれ
ば、金属シール部材を省略できる。
In the package, the upper surface of the ceramic terminal member may abut on the metal seal member, or the metal seal member can be omitted if the upper and lower surfaces are configured to abut on the cutouts of the side frame member.

【0012】セラミックス端子部材の上面の外周縁に連
続した段差を設ければ、鑞付け作業の容易なパッケージ
を得る。
By providing a continuous step on the outer peripheral edge of the upper surface of the ceramic terminal member, a package that can be easily brazed is obtained.

【0013】セラミックス端子部材と側枠部材との接合
面に、厚み0.2mm以下の金属の薄板を挟むことで、
セラミックス端子部材と側枠部材とに熱膨張係数の相違
があっても、鑞付け後の気密性の良好なパッケージを得
る。
By sandwiching a thin metal plate having a thickness of 0.2 mm or less on the joint surface between the ceramic terminal member and the side frame member,
Even if there is a difference in the coefficient of thermal expansion between the ceramic terminal member and the side frame member, a package having good airtightness after brazing is obtained.

【0014】側枠部材を、銅溶浸法による銅−タングス
テン系合金の筒状の射出成形体と窒化アルミのセラミッ
クス端子部材にて構成すれば、接合箇所の少ない放熱性
の良好なパッケージを得る。
If the side frame member is constituted by a cylindrical injection molded body of a copper-tungsten alloy by a copper infiltration method and a ceramic terminal member of aluminum nitride, a package having few joints and good heat radiation can be obtained. .

【0015】請求項1乃至6に記載される光半導体素子
用パッケージに、少なくとも光半導体素子と光ファイバ
ーを搭載した後封止カバーにて密封すれば、従来技術よ
り製造工程の単純化された安価で、且つ、熱歪みが少な
く光出力の安定した光半導体モジュールが提供できる。
If the optical semiconductor element package described in any one of claims 1 to 6 is mounted with at least the optical semiconductor element and the optical fiber and then sealed with a sealing cover, the manufacturing process is simplified compared to the prior art and the cost is reduced. In addition, an optical semiconductor module having a small thermal distortion and a stable optical output can be provided.

【0016】[0016]

【発明の実施の形態】以下に、本発明を具体化した好適
の実施例を、図面に基づいて詳細に説明する。図1は、
本発明の光半導体素子用パッケージの第1の実施例の立
体図である。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below in detail with reference to the drawings. FIG.
1 is a three-dimensional view of a first embodiment of the package for an optical semiconductor device of the present invention.

【0017】該図において1は、中央に光半導体素子を
載置するエリアを有する銅−タングステン系の合金から
成る金属基板であり、両側方に取付け孔1aが設けられ
る。2は、金属基板1の外縁に沿って四方を囲む側枠部
材であり、前枠部2aには光ファイバーを接続したり、
固定する穴または光を透過する窓部2b等の光部材の固
定手段が設けられる。側枠部材2は、平板状の前枠部を
含む側枠を個々に鑞付け等にて接合してもよいが、筒状
に射出成形したものを輪切りにした上、図2の立体図に
示すように一体成形してもよい。
In FIG. 1, reference numeral 1 denotes a metal substrate made of a copper-tungsten alloy having an area for mounting an optical semiconductor element in the center, and mounting holes 1a are provided on both sides. Reference numeral 2 denotes a side frame member that surrounds four sides along the outer edge of the metal substrate 1, and an optical fiber is connected to the front frame portion 2a,
A fixing means of a light member such as a fixing hole or a window portion 2b which transmits light is provided. The side frame member 2 may be formed by individually joining side frames including a flat front frame portion by brazing or the like. It may be integrally formed as shown.

【0018】射出成形法としては、特開平7−1352
76号公報に記載されている銅溶浸法が好ましい。より
詳しくは、ニッケル粉末と、タングステン粉末と、モリ
ブデン粉末及びタングステン−モリブデン粉末の少なく
とも1種とをニッケル粉末が1重量%以下となるよう混
合した混合粉末とする工程と、該混合粉末を融点100
℃以下のワックス成分と配分を殆ど残さない有機物を混
合してなる有機バインダーと共に混練りする工程と、該
混練物を射出成形により成形する工程と、成形したもの
を脱バインダー処理して空孔を形成する工程とを経て、
溶融した銅を多孔成形体内に溶浸させたものである。
As the injection molding method, Japanese Patent Application Laid-Open No.
The copper infiltration method described in JP-B-76 is preferable. More specifically, a step of forming a mixed powder in which nickel powder, tungsten powder, and at least one of molybdenum powder and tungsten-molybdenum powder are mixed so that the nickel powder is 1% by weight or less;
A step of kneading with an organic binder obtained by mixing a wax component having a temperature of not more than 0 ° C. and an organic substance that hardly leaves a distribution, a step of molding the kneaded substance by injection molding, and a step of demolding the molded substance to remove pores. Through the process of forming
It is obtained by infiltrating molten copper into a porous molded body.

【0019】図2において、側枠部材2となる射出成形
体は、筒状の四角柱を輪切りにしてX、Y、Z面を、フ
ライスまたはエンドミル加工して前枠部2aに光ファイ
バーの光を透過する窓部2bを設ければ、接合工数が単
純化され、且つ、良好な放熱性を有し熱膨張係数の近似
する窒化アルミニウム等のセラミックス端子部材と接合
することにより信頼性と寸法精度の高い側枠部材2を得
ることができる。
In FIG. 2, the injection molded body serving as the side frame member 2 is formed by cutting a rectangular quadrangular prism into a circle and milling or end milling the X, Y, and Z planes, and applying light of an optical fiber to the front frame 2a. The provision of the transparent window 2b simplifies the number of bonding steps, and improves reliability and dimensional accuracy by bonding to a ceramic terminal member such as aluminum nitride having good heat dissipation and an approximate coefficient of thermal expansion. A high side frame member 2 can be obtained.

【0020】そして図1において、セラミックス端子部
材3は、酸化アルミニウムや窒化アルミニウムの2層以
上の焼成体で構成され、下層部材3aは、短冊状のグリ
ーンシートにタングステン、モリブデン、マンガン等の
高融点金属粉末に適当な有機溶剤、溶媒を添加混合して
得た金属ペーストをメタライズ配線層3cとして周知の
スクリーン印刷法にて被着させ、上層部材3bとして、
略短冊状のグリーンシートを重ねてプリフォームしたも
のである。メタライズ配線層3cには、外部端子4が鑞
付けされる。
In FIG. 1, the ceramic terminal member 3 is made of a fired body of two or more layers of aluminum oxide or aluminum nitride, and the lower layer member 3a is a strip-shaped green sheet formed of a high melting point of tungsten, molybdenum, manganese or the like. A metal paste obtained by adding and mixing an appropriate organic solvent and a solvent to the metal powder is applied as a metallized wiring layer 3c by a well-known screen printing method, and as an upper layer member 3b,
The preform is formed by stacking substantially strip-shaped green sheets. The external terminals 4 are brazed to the metallized wiring layer 3c.

【0021】図3に、下層部材3aと上層部材3bとを
重ねたセラミックス端子部材3の平面図を示す。該図に
おいて、長手方向の一方のA面は前枠部2a側に当接
し、他端のB面は自由端となり、C面が側枠2に当接し
セラミックス端子部材3自身と側枠2の寸法誤差を吸収
する。3dは、後述の図10で説明する連続した段差で
ある。図1において、対抗して配置されているセラミッ
クス端子部材3のC面を延長してコの字状にセラミック
ス端子部材3を一体化すると、一方を前枠部2a側に当
接し他端を自由端とすることも可能であるが、グリーン
シートの加工性と焼成後の収縮歪みを矯正するのが困難
である。
FIG. 3 is a plan view of the ceramic terminal member 3 in which the lower layer member 3a and the upper layer member 3b are overlapped. In this figure, one surface A in the longitudinal direction is in contact with the front frame portion 2a side, the other surface B is a free end, and the surface C is in contact with the side frame 2 so that the ceramic terminal member 3 itself and the side frame 2 Absorb dimensional errors. 3d is a continuous step described later with reference to FIG. In FIG. 1, when the ceramic terminal member 3 is integrated in a U-shape by extending the C surface of the ceramic terminal member 3 opposed thereto, one of the terminals comes in contact with the front frame portion 2a and the other end is free. Although it is possible to use the edge, it is difficult to correct the workability of the green sheet and the shrinkage distortion after firing.

【0022】再び図1において、セラミックス端子部材
3の上面と前枠部2aを含む側枠部材2の上面の揃う所
に、シールリング5を接合する。このように構成した容
器の内部に、少なくとも光半導体素子と光ファイバーを
搭載した後、封止カバーにて密封すれば光半導体モジュ
ールとして完成する。
Referring again to FIG. 1, a seal ring 5 is joined to a portion where the upper surface of the ceramic terminal member 3 and the upper surface of the side frame member 2 including the front frame portion 2a are aligned. After mounting at least the optical semiconductor element and the optical fiber inside the container configured as described above, the optical semiconductor module is completed by sealing with a sealing cover.

【0023】図4に、第2の実施例の立体図を示す。光
半導体素子を載置するエリアを有する銅−タングステン
系の合金から成る金属基板1の両側方に取付け孔1aが
設けられる。金属基板1の上には、その外縁に沿って四
方を囲む側枠7を接合する。側枠部材7の一部である前
枠部7aには、光ファイバーを接続したり、固定する穴
または光を透過する窓部2b等の手段が設けられる。側
枠部材7は、平板状の前枠部を含む側枠を個々に鑞付け
にて接合してもよいが、筒状に射出成形したものを輪切
りにした上、図5に示す側枠部材7を一体成形してもよ
い。
FIG. 4 shows a three-dimensional view of the second embodiment. Mounting holes 1a are provided on both sides of a metal substrate 1 made of a copper-tungsten alloy having an area for mounting an optical semiconductor element. On the metal substrate 1, side frames 7 surrounding four sides are joined along the outer edge thereof. The front frame portion 7a which is a part of the side frame member 7 is provided with means such as a hole for fixing or connecting an optical fiber or a window portion 2b for transmitting light. The side frame member 7 may be individually joined by brazing side frames including a flat front frame portion. However, the side frame member shown in FIG. 7 may be integrally formed.

【0024】図5において、側枠部材7となる筒状の四
角柱の射出成形体は輪切りにしてX、Y面を、フライス
またはエンドミル加工して前枠部7aに光ファイバーの
光を透過する窓部2bを設ければ、接合工数が単純化さ
れる。射出成形体の製法は、第1の実施例と同様の銅溶
浸法が好ましい。
In FIG. 5, an injection molded body of a cylindrical quadratic prism serving as the side frame member 7 is cut into a circle, and the X and Y planes are milled or end-milled to transmit a light of an optical fiber to a front frame portion 7a. Providing the portion 2b simplifies the number of joining steps. As a method for producing the injection molded body, a copper infiltration method similar to that of the first embodiment is preferable.

【0025】そして図4において、セラミックス端子部
材8は、酸化アルミニウムや窒化アルミニウムの2層以
上の焼成体で構成され、下層部材8aは、短冊状のグリ
ーンシートにメタライズ配線層3cを被着させ、上層部
材8bとして、略短冊状のグリーンシートを重ねてプリ
フォームしたものである。メタライズ配線層3cには、
外部端子4が鑞付けされる。図4の形態であれば、セラ
ミックス端子部材8は側枠7に対し、両端共に自由端と
して接合されるから長手方向の側枠7とセラミックス端
子部材8の寸法精度はラフであってもよい。さらに、セ
ラミックス端子部材8の上面と前枠部7aを含む側枠7
の上面に、シールリング5を接合する。このように構成
した容器の内部に、少なくとも光半導体素子と光ファイ
バーを搭載した後、封止カバーにて密封すれば光半導体
モジュールとして完成する。
In FIG. 4, the ceramic terminal member 8 is made of a fired body of two or more layers of aluminum oxide or aluminum nitride, and the lower layer member 8a is a strip-shaped green sheet on which a metallized wiring layer 3c is adhered. As the upper layer member 8b, substantially strip-shaped green sheets are stacked and preformed. In the metallized wiring layer 3c,
The external terminals 4 are brazed. 4, the ceramic terminal member 8 is joined to the side frame 7 at both ends as free ends, so that the dimensional accuracy of the side frame 7 and the ceramic terminal member 8 in the longitudinal direction may be rough. Further, the side frame 7 including the upper surface of the ceramic terminal member 8 and the front frame 7a.
The seal ring 5 is joined to the upper surface of the substrate. After mounting at least the optical semiconductor element and the optical fiber inside the container configured as described above, the optical semiconductor module is completed by sealing with a sealing cover.

【0026】図6に、第3の実施例の立体図を示す。光
半導体素子を載置するエリアを有する銅−タングステン
系の合金から成る金属基板1の両側方に取付け孔1aが
設けられる。金属基板1の上には、その外縁に沿って四
方を囲む側枠9を接合する。側枠9の一部である前枠部
9aには、光ファイバーを接続したり、固定する穴また
は光を透過する窓部2b等の手段が設けられる。側枠9
は、平板状の前枠部を含む側枠を個々に鑞付けにて接合
してもよいが、筒状に射出成形したものを輪切りにした
上、図7に示すように側枠部材9を一体成形してもよ
い。
FIG. 6 shows a three-dimensional view of the third embodiment. Mounting holes 1a are provided on both sides of a metal substrate 1 made of a copper-tungsten alloy having an area for mounting an optical semiconductor element. On the metal substrate 1, side frames 9 surrounding the four sides are joined along the outer edge thereof. The front frame portion 9a, which is a part of the side frame 9, is provided with means such as a hole for fixing or connecting an optical fiber or a window portion 2b for transmitting light. Side frame 9
Although the side frames including the flat front frame portion may be individually joined by brazing, the side frame member 9 may be cut into a cylindrical shape by injection molding, and the side frame member 9 may be formed as shown in FIG. It may be integrally molded.

【0027】図7において、側枠部材9となる筒状の四
角柱の射出成形体は輪切りにしてX1、X2、Y1、Y
2面を、フライスまたはエンドミル加工して前枠部9a
に光ファイバーの光を透過する窓部2bを設ければ、接
合工数が単純化される上に、単品としてのシールリング
5を省略できる。射出成形体の製法は、第1の実施例と
同様の銅溶浸法が好ましい。
In FIG. 7, the injection molded article of the cylindrical quadratic prism serving as the side frame member 9 is cut into X1, X2, Y1, Y
Milling or end milling two surfaces to form front frame 9a
If the window 2b through which the light of the optical fiber is transmitted is provided, the number of bonding steps can be simplified and the seal ring 5 as a single product can be omitted. As a method for producing the injection molded body, a copper infiltration method similar to that of the first embodiment is preferable.

【0028】そして図6において、セラミックス端子部
材3は第1の実施例に用いたものと同一の、酸化アルミ
ニウムや窒化アルミニウムの2層以上の焼成体で構成さ
れ、メタライズ配線層3cには、外部端子4が鑞付けさ
れる。金属基板1と側枠部材9とセラミックス端子部材
3とを鑞付けした容器の内部に、少なくとも光半導体素
子と光ファイバーを搭載した後、封止カバーにて密封す
れば光半導体モジュールとして完成する。
In FIG. 6, the ceramic terminal member 3 is made of the same fired body of two or more layers of aluminum oxide or aluminum nitride as the one used in the first embodiment. Terminal 4 is brazed. An optical semiconductor module is completed by mounting at least an optical semiconductor element and an optical fiber inside a container in which the metal substrate 1, the side frame member 9, and the ceramic terminal member 3 are brazed, and sealing with a sealing cover.

【0029】図8に、第4の実施例の立体図を示す。光
半導体素子を載置するエリアを有する銅−タングステン
系の合金から成る金属基板1の両側方に取付け孔1aが
設けられる。金属基板1の上には、その外縁に沿って四
方を囲む側枠部材10を接合する。側枠部材10の一部
である前枠部10aには、光ファイバーを接続したり、
固定する穴または光を透過する窓部2b等の手段が設け
られる。側枠部材10は、平板状の前枠部を含む側枠を
個々に鑞付けにて接合してもよいが、筒状に射出成形し
たものを輪切りにした上、図9に示すように側枠部材1
0を一体成形してもよい。
FIG. 8 shows a three-dimensional view of the fourth embodiment. Mounting holes 1a are provided on both sides of a metal substrate 1 made of a copper-tungsten alloy having an area for mounting an optical semiconductor element. A side frame member 10 surrounding the four sides is joined to the metal substrate 1 along the outer edge thereof. An optical fiber is connected to the front frame portion 10a which is a part of the side frame member 10,
Means such as a fixing hole or a window 2b for transmitting light are provided. The side frame member 10 may be individually joined by brazing the side frames including the flat front frame portion. However, the side frame member is formed by injection-molding into a cylindrical shape, and as shown in FIG. Frame member 1
0 may be integrally molded.

【0030】図9において、側枠部材10となる筒状の
四角柱の射出成形体は輪切りにしてX1、X2、Y1、
Y2面を、フライスまたはエンドミル加工して前枠部1
0aに光ファイバーの光を透過する窓部2bを設けれ
ば、接合工数が単純化される上に、単品としてのシール
リング5を省略できる。射出成形体の製法は、第1の実
施例と同様の銅溶浸法が好ましい。
In FIG. 9, a cylindrical quadratic prism injection molded body serving as the side frame member 10 is sliced into X1, X2, Y1,
Milling or end-milling the Y2 surface to make the front frame 1
If the window portion 2b for transmitting the light of the optical fiber is provided at 0a, the number of joining steps is simplified and the seal ring 5 as a single product can be omitted. As a method for producing the injection molded body, a copper infiltration method similar to that of the first embodiment is preferable.

【0031】そして図8において、セラミックス端子部
材8は第2の実施例に用いたものと同一の、酸化アルミ
ニウムや窒化アルミニウムの2層以上の焼成体で構成さ
れ、メタライズ配線層3cには、外部端子4が鑞付けさ
れる。図8の形態であれば、セラミックス端子部材8は
側枠部材10に対し、両端共に自由端として接合される
から長手方向の側枠部材10とセラミックス端子部材8
の寸法精度はラフであってもよい。金属基板1と側枠部
材10とセラミックス端子部材8とを鑞付けした容器の
内部に、少なくとも光半導体素子と光ファイバーを搭載
した後、封止カバーにて密封すれば光半導体モジュール
として完成する。
In FIG. 8, the ceramic terminal member 8 is made of the same fired body of two or more layers of aluminum oxide or aluminum nitride as used in the second embodiment, and the metallized wiring layer 3c is provided with an external material. Terminal 4 is brazed. In the embodiment shown in FIG. 8, the ceramic terminal member 8 is joined to the side frame member 10 at both ends as free ends.
May have a rough dimensional accuracy. An optical semiconductor module is completed by mounting at least an optical semiconductor element and an optical fiber in a container in which the metal substrate 1, the side frame member 10, and the ceramic terminal member 8 are brazed, and then sealing with a sealing cover.

【0032】又、第1乃至4の実施例に共通して、セラ
ミックス端子部材の上面に連続した段差を設ければ、該
部の鑞付け工程の際、鑞材を乗せるガイドとしたり鑞材
の浸透する湯道となる。第1の実施例の2層のセラミッ
クス端子部材3の平面図である図3のX−X断面を例に
とって、図10に示して説明する。下層部材3aには、
メタライズ配線層3cが被着され外部端子4が鑞付けさ
れる。上層部材3bの上面(イ)に、シールリング5や
側枠部材9、10に沿った連続した段差3d設けられて
いるから、段差3dとシールリング5や側枠部材9、1
0にて形成されるV字状の溝が、該部の鑞付け工程の
際、鑞材を乗せるガイドとなったり鑞材の浸透する湯道
となる。
Also, in common with the first to fourth embodiments, if a continuous step is provided on the upper surface of the ceramic terminal member, it can be used as a guide on which the brazing material is to be placed or a brazing material in the brazing process of the portion. It becomes a runway to penetrate. A description will be given with reference to FIG. 10 taking the XX cross section of FIG. 3 as a plan view of the two-layer ceramic terminal member 3 of the first embodiment as an example. In the lower layer member 3a,
The metallized wiring layer 3c is applied and the external terminals 4 are brazed. Since a continuous step 3d is provided along the seal ring 5 and the side frame members 9 and 10 on the upper surface (a) of the upper layer member 3b, the step 3d and the seal ring 5 and the side frame members 9 and 1 are provided.
The V-shaped groove formed at 0 serves as a guide on which the brazing material is placed or a runner through which the brazing material permeates during the brazing process of the portion.

【0033】さらに、パッケージを構成する部材に熱膨
張率の異なる部材が存在すると、鑞付け後の気密性に問
題を残すことがある。セラミックス端子部材3に窒化ア
ルミニウムを、筒状に射出成形した側枠部材2に銅−タ
ングステン系合金を選ぶと、その熱膨張率は、4.5×
10-6/deg及び8.3×10-6/degと異なり、
気密不良を発生することがあるが、セラミックス端子部
材3と側枠部材(2、7、9、10)の間に、厚さ0.
2mm以下の薄板銅板の両面に0.1mmの銀鑞を乗せ
た鑞材11を挟んで鑞付けすることにより、鑞材11が
クッションの役目を果たし、気密不良を解消することが
判った。
Further, if members having different coefficients of thermal expansion are present in the members constituting the package, there may be a problem in airtightness after brazing. If aluminum nitride is used for the ceramic terminal member 3 and a copper-tungsten alloy is used for the side frame member 2 formed by injection molding in a cylindrical shape, the coefficient of thermal expansion is 4.5 ×
Unlike 10 −6 / deg and 8.3 × 10 −6 / deg,
In some cases, poor airtightness may occur. However, the thickness between the ceramic terminal member 3 and the side frame members (2, 7, 9, 10) is not more than 0.1 mm.
It was found that by brazing with brazing material 11 having 0.1 mm silver solder placed on both sides of a thin copper plate of 2 mm or less, brazing material 11 functions as a cushion and eliminates poor airtightness.

【0034】次に、図13に示す従来のパッケージの金
属基板101の形態を、本発明の第1の実施例の基板1
に置き換えて、それぞれの特徴を備えたパッケージに、
図11に示すPD素子、LD素子、ペエルチェ素子、ア
イソレータ等を搭載し、光ファイバーを接続して光出力
の安定性を比較評価した結果に就き説明する。
Next, the form of the metal substrate 101 of the conventional package shown in FIG. 13 is changed to the substrate 1 of the first embodiment of the present invention.
To a package with each feature,
The results of comparative evaluation of the stability of the optical output by mounting the PD element, LD element, Peltier element, isolator, etc. shown in FIG. 11 and connecting an optical fiber will be described.

【0035】図11において、本発明品と従来品に共通
する光半導体モジュール20内に収納する各種の半導体
デバイスについて説明する。第1の絶縁基板31と第2
の絶縁基板32の間にペルチェ素子33(6×6mm)
を挟んで、金属基板1上に配置する。第2の絶縁基板3
2の上にマウント基板34を重ねて半導体搭載エリアを
造り、光信号や電気信号を相互に変換するPD素子35
やLD素子36、ペルチェ素子33の制御温度を監視す
るサーミスタ素子37(設定温度25〜35℃)、光の
光軸を矯正するレンズ38等を搭載する。これらの各種
の半導体デバイスは、セラミックス端子部材3に被着さ
れたメタライズ配線層3cにボンディングワイヤにて接
続されている。
Referring to FIG. 11, various semiconductor devices housed in the optical semiconductor module 20 common to the product of the present invention and the conventional product will be described. The first insulating substrate 31 and the second
Peltier device 33 (6 × 6 mm) between insulating substrates 32
Are arranged on the metal substrate 1. Second insulating substrate 3
2. A PD element 35 for converting a light signal or an electric signal to each other by forming a semiconductor mounting area by superposing a mount substrate 34 on the
And a thermistor element 37 (set temperature 25 to 35 ° C.) for monitoring the control temperature of the LD element 36 and the Peltier element 33, and a lens 38 for correcting the optical axis of light. These various semiconductor devices are connected to the metallized wiring layer 3c attached to the ceramic terminal member 3 by bonding wires.

【0036】一方、前枠部2aに設けられる窓部2bに
は、光の通過方向を制御するアイソレータ39が、コネ
クタ11には、光ファイバー40からの光反射がLD素
子36にノイズを発生するのを防ぐため、端面を8°に
研磨したフェルール41が、レーザー光線の照射による
YAG熔接にて固定される。
On the other hand, an isolator 39 for controlling the light passing direction is provided in the window 2b provided in the front frame 2a, and a light reflection from the optical fiber 40 causes the LD element 36 to generate noise in the connector 11 in the connector 11. In order to prevent this, a ferrule 41 whose end face is polished to 8 ° is fixed by YAG welding by laser beam irradiation.

【0037】次に、本発明品と従来品の光半導体用パッ
ケージの仕様の比較を表1に示す。
Next, Table 1 shows a comparison of specifications between the optical semiconductor package of the present invention and the conventional optical semiconductor package.

【0038】[0038]

【表1】 [Table 1]

【0039】以上の仕様にて用意した双方の光半導体モ
ジュール20を、MIL−STD−883Cに規定され
る温度サイクル(−65〜150℃)試験に曝した後、
厚さ3mm、大きさ200×300mmの放熱板に固定
してFFP半値全巾±24°で波長1.48μmの光を
入射し、一定電流駆動にて光出力を計測した。
After exposing both optical semiconductor modules 20 prepared according to the above specifications to a temperature cycle (-65 to 150 ° C.) test specified in MIL-STD-883C,
Light having a wavelength of 1.48 μm was injected at a full width at half maximum of FFP of ± 24 ° while being fixed to a heat sink having a thickness of 3 mm and a size of 200 × 300 mm, and the light output was measured by constant current driving.

【0040】その結果を、横軸に雰囲気温度(℃)、縦
軸に光出力(A.VdB)をプロットして図12に示
す。雰囲気温度25℃では双方共に安定しているが、温
度条件が厳しくなるにつれ、温度サイクル試験を経て顕
在化される容器の熱歪みによる光軸づれに起因する光出
力の低下が、従来品では顕著である。この現象は、本発
明品の側枠2が射出成形体で接合箇所が少ないこと、セ
ラミックス端子部材3の材質が酸化アルミより10倍近
く熱伝導率の良い窒化アルミであること、セラミックス
端子部材3が嵌め合わせではなく突き合わせの形態で鑞
付けされているので、均一な鑞材が注入され熱容量の偏
りがなく、放熱性が良好で熱歪みの発生が抑えられてい
ることに起因するものと判断する。
The results are plotted in FIG. 12 by plotting the ambient temperature (° C.) on the horizontal axis and the light output (A.VdB) on the vertical axis. Although both are stable at an ambient temperature of 25 ° C., as the temperature conditions become more severe, the decrease in the optical output due to the misalignment of the optical axis due to the thermal distortion of the container that becomes apparent after the temperature cycle test is remarkable in the conventional product. It is. This phenomenon is caused by the fact that the side frame 2 of the product of the present invention is an injection-molded body and has few joints, the material of the ceramic terminal member 3 is aluminum nitride having a thermal conductivity nearly 10 times that of aluminum oxide, and the ceramic terminal member 3 Is brazed in the form of butting instead of fitting, so it is judged that uniform brazing material is injected, there is no deviation in heat capacity, heat dissipation is good and thermal distortion is suppressed. I do.

【0041】[0041]

【発明の効果】側枠とセラミックス端子部材の組合わせ
を、双方の寸法精度に厳密な管理の不要な接合形態に改
善し、同時に、接合箇所を省くと共に、パッケージの主
要な構成要素である側枠とセラミックス端子部材に熱伝
導率の近似した材料を選択することで、放熱性の向上と
熱歪みの少ない安価な光半導体用パツケージと光半導体
モジュールを提供できる。
According to the present invention, the combination of the side frame and the ceramic terminal member can be improved to a bonding mode which does not require strict control of the dimensional accuracy of both sides, and at the same time, the bonding portion can be omitted and the side which is a main component of the package can be reduced. By selecting a material having similar thermal conductivity for the frame and the ceramic terminal member, it is possible to provide an inexpensive optical semiconductor package and an optical semiconductor module with improved heat dissipation and less thermal distortion.

【図面の簡単な説明】[Brief description of the drawings]

【図1】第1の実施例の光半導体用パッケージの立体図
である。
FIG. 1 is a three-dimensional view of an optical semiconductor package according to a first embodiment.

【図2】第1の実施例の側枠の立体図である。FIG. 2 is a three-dimensional view of a side frame of the first embodiment.

【図3】第1の実施例のセラミックス端子部材の平面図
である。
FIG. 3 is a plan view of the ceramic terminal member of the first embodiment.

【図4】第2の実施例の光半導体用パッケージの立体図
である。
FIG. 4 is a three-dimensional view of an optical semiconductor package according to a second embodiment.

【図5】第2の実施例の側枠の立体図である。FIG. 5 is a three-dimensional view of a side frame according to the second embodiment.

【図6】第3の実施例の光半導体用パッケージの立体図
である。
FIG. 6 is a three-dimensional view of an optical semiconductor package according to a third embodiment.

【図7】第3の実施例の側枠の立体図である。FIG. 7 is a three-dimensional view of a side frame according to the third embodiment.

【図8】第4の実施例の光半導体用パッケージの立体図
である。
FIG. 8 is a three-dimensional view of an optical semiconductor package according to a fourth embodiment.

【図9】第4の実施例の側枠の立体図である。FIG. 9 is a three-dimensional view of a side frame according to the fourth embodiment.

【図10】本発明の2層のセラミックス端子部材の断面
図である。
FIG. 10 is a sectional view of a two-layer ceramic terminal member of the present invention.

【図11】パッケージ内に収納される光半導体モジュー
ルの断面図である。
FIG. 11 is a cross-sectional view of an optical semiconductor module housed in a package.

【図12】本発明品と従来品の雰囲気温度に対応する光
出力のプロット図である。
FIG. 12 is a plot of light output corresponding to the ambient temperature of a product of the present invention and a conventional product.

【図13】従来の光半導体パッケージの断面図である。FIG. 13 is a sectional view of a conventional optical semiconductor package.

【符号の説明】[Explanation of symbols]

1:金属基板 2、7、9、10:側枠部材 3、8:セラミックス端子部材 4:外部端子 5:シールリング 6:カバー 11:鑞材 1: Metal substrate 2, 7, 9, 10: Side frame member 3, 8: Ceramic terminal member 4: External terminal 5: Seal ring 6: Cover 11: Brazing material

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 光半導体素子を搭載する金属基板と、セ
ラミックス端子部材を支持し光ファイバーを接続する手
段を有する側枠部材と、封止カバーとから成る光半導体
素子を収納するパッケージであって、前記セラミックス
端子部材の長手方向の少なくとも一方の端部面が前記側
枠部材に拘束されない自由端として接合される構成を特
徴とする光半導体素子用パッケージ。
1. A package for housing an optical semiconductor element comprising a metal substrate on which an optical semiconductor element is mounted, a side frame member having means for supporting a ceramic terminal member and connecting an optical fiber, and a sealing cover, A package for an optical semiconductor element, characterized in that at least one end face in the longitudinal direction of the ceramic terminal member is joined as a free end not restricted by the side frame member.
【請求項2】 セラミックス端子部材の上面が金属シー
ル部材に当接して接合される構成を特徴とする請求項1
に記載の光半導体素子用パッケージ。
2. The structure according to claim 1, wherein the upper surface of the ceramic terminal member is brought into contact with and joined to the metal seal member.
4. The package for an optical semiconductor device according to claim 1.
【請求項3】 セラミックス端子部材の上面と下面が側
枠部材の切欠部に当接して接合される構成を特徴とする
請求項1に記載の光半導体素子用パッケージ。
3. The package for an optical semiconductor device according to claim 1, wherein an upper surface and a lower surface of the ceramic terminal member are joined by being brought into contact with a notch of the side frame member.
【請求項4】 セラミックス端子部材の上面の外周縁
に、連続した段差を設ける構成を特徴とする請求項2ま
たは3のいずれかに記載の光半導体素子用パッケージ。
4. The package for an optical semiconductor device according to claim 2, wherein a continuous step is provided on an outer peripheral edge of an upper surface of the ceramic terminal member.
【請求項5】 セラミックス端子部材と側枠部材との接
合面に、厚さ0.2mm以下の金属の薄板の両面に鑞材
を乗せて挟んだことを特徴とする請求項1乃至4のいず
れかに記載の光半導体素子用パッケージ。
5. The method according to claim 1, wherein a brazing material is placed on both surfaces of a thin metal plate having a thickness of 0.2 mm or less on a joining surface between the ceramic terminal member and the side frame member. The package for an optical semiconductor device according to any one of the above.
【請求項6】 側枠部材が銅溶浸法による銅−タングス
テン系合金の筒状体で形成され、セラミックス端子部材
が窒化アルミニウム形成されていることを特徴とする請
求項1乃至5のいずれかに記載の光半導体素子用パッケ
ージ。
6. The side frame member is formed of a copper-tungsten alloy cylindrical body by a copper infiltration method, and the ceramic terminal member is formed of aluminum nitride. 4. The package for an optical semiconductor device according to claim 1.
【請求項7】 請求項1乃至6に記載される光半導体素
子用パッケージに、少なくとも光半導体素子と光ファイ
バーが搭載されていることを特徴とする光半導体モジュ
ール。
7. An optical semiconductor module, wherein at least an optical semiconductor element and an optical fiber are mounted on the optical semiconductor element package according to claim 1.
JP30517297A 1997-11-07 1997-11-07 Package for optical semiconductor device and optical semiconductor module Pending JPH11145317A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30517297A JPH11145317A (en) 1997-11-07 1997-11-07 Package for optical semiconductor device and optical semiconductor module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30517297A JPH11145317A (en) 1997-11-07 1997-11-07 Package for optical semiconductor device and optical semiconductor module

Publications (1)

Publication Number Publication Date
JPH11145317A true JPH11145317A (en) 1999-05-28

Family

ID=17941937

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30517297A Pending JPH11145317A (en) 1997-11-07 1997-11-07 Package for optical semiconductor device and optical semiconductor module

Country Status (1)

Country Link
JP (1) JPH11145317A (en)

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US6599034B2 (en) 2000-09-04 2003-07-29 Sumitomo Electric Industries, Ltd. Sealed airtight container for optical-semiconductors and optical-semiconductors module
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Publication number Priority date Publication date Assignee Title
US6599034B2 (en) 2000-09-04 2003-07-29 Sumitomo Electric Industries, Ltd. Sealed airtight container for optical-semiconductors and optical-semiconductors module
EP1278242A2 (en) * 2001-06-27 2003-01-22 Sumitomo Electric Industries, Ltd. Hermetically sealing enclosure for housing photo-semiconductor devices and photo-semiconductor module incorporating the enclosure
US6600223B2 (en) 2001-06-27 2003-07-29 Sumitomo Electric Industries, Ltd. Hermetically sealing enclosure for housing photo-semiconductor devices and photo-semiconductor module incorporating the enclosure
EP1278242A3 (en) * 2001-06-27 2004-03-17 Sumitomo Electric Industries, Ltd. Hermetically sealing enclosure for housing photo-semiconductor devices and photo-semiconductor module incorporating the enclosure
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US6846117B2 (en) 2002-10-08 2005-01-25 Intel Corporation Optical module package
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