JPH11145284A - Method for manufacturing semiconductor device and semiconductor device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent a delamination, or a thermal deformation and a breakage of an organic system insulation film by a method wherein, after a heating step of eliminating moisture included in a laminated insulation film is executed, a wiring material is continuously formed without exposing a substrate to-be- processed to the outer atmosphere. SOLUTION: Before a wiring material for a control plug 12 is buried in a connection hole, before a wiring material for an upper layer wiring 13 is formed, and before an upper layer cap inorganic system insulation film 8 is formed, a heating step is executed. Thus, moisture adsorbed in the inorganic system insulation film 8 and existing internally is eliminated. For this reason, if a wiring material and an interlayer insulation film are formed continuously without exposing a to-be-processed substrate 1 to the outer atmosphere thereafter, it disappears that moisture at a time of the heating step is evaporated. Accordingly, it is possible to prevent separation between an organic insulation film lacking stress-resistance and an inorganic insulation film, or a thermal deformation or a breakage of the organic insulation film.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device and a semiconductor device using the same, and more particularly, to a method of manufacturing a semiconductor device using a laminated insulating film of an organic insulating film and an inorganic insulating film. The present invention relates to a method for manufacturing a semiconductor device suitable for application in preventing peeling of a film and a semiconductor device using the same.

[0002]

2. Description of the Related Art As the degree of integration of semiconductor devices such as LSIs increases, multilayer wiring structures are frequently used, and the width of an interlayer insulating film between adjacent wirings in the same wiring layer is reduced.
The thickness of the interlayer insulating film between different wiring layers is also reduced.
Due to such a reduction in the wiring interval, wiring delay and the like due to an increase in the capacitance between wirings are becoming a problem. Therefore, the actual operation speed of the semiconductor device does not conform to the scaling rule of 1 / K (K is a scaling factor), and the advantage of high integration cannot be sufficiently exhibited. Preventing an increase in the capacitance between wirings is one of the elemental technologies that must be solved in order to respond to various demands such as high-speed operation, low power consumption, and low heat generation of a highly integrated semiconductor device.

[0003] Insulator film materials that have been conventionally used for interlayer insulating films and the like of semiconductor devices include SiO ₂ , SiON and Si.
Inorganic materials such as ₃ N ₄ was mainly. As a method of reducing the capacitance between wirings of a highly integrated semiconductor device, for example, Japanese Patent Laid-Open
As disclosed in JP-A-7650, it is effective to employ an interlayer insulating film made of a material having a lower dielectric constant than these general inorganic materials. Representative examples of the low dielectric constant material include an inorganic material such as a silicon oxide-based insulating film containing fluorine atoms (hereinafter referred to as SiOF) and an organic material containing carbon atoms.

[0004] SiOF is Si-O constituting SiO _2.
By terminating the -Si bond with an F atom, a low dielectric constant is achieved due to a decrease in the density and a small polarizability of the Si-F bond and the OF bond. This S
iOF uses a conventional Si
Since it is similar to O ₂ , it can be easily adopted even in a current manufacturing apparatus. Also, since it is an inorganic material, it has excellent heat resistance.

On the other hand, an organic SOG (Spin On Glas) is used as a low dielectric constant insulator film made of an organic material containing carbon atoms.
Organic polymer materials such as s), polyimide, polyparaxylylene (trade name: parylene), benzocyclobutene, and polynaphthalene are known. These materials contain carbon atoms to reduce their density, and they also contain molecules (monomers).
A low dielectric constant is achieved by reducing the polarizability of itself. In addition, a certain degree of heat resistance is obtained by introducing a siloxane bond, an imide bond or a benzene ring or a naphthalene ring. By introducing a fluorine atom into these hydrocarbon-based organic materials, the relative dielectric constant becomes 1.
The dielectric constant is further reduced to about 5 to 2.5, and the heat resistance is further improved. As the organic material of such a fluororesin, perfluoro group-containing polyimide, fluorinated polyarylether, Teflon (trade name), Flare (trade name) and the like are known. These organic low dielectric constant materials are described, for example, in "Nikkei Micro Devices" magazine, July 1995, 105-105.
It is introduced on page 112.

These low dielectric constant material layers having a relative dielectric constant of about 3.5 or less are applied not only between adjacent wirings but also between wiring layers of different levels, and the low dielectric constant material layer is formed of SiO _2.
(Dielectric constant 4), SiON (dielectric constant 4 to 6), Si ₃
The applicant of the present invention has disclosed a laminated insulating film sandwiched between insulator films having excellent film quality such as N ₄ (relative dielectric constant 6) in Japanese Patent Application Laid-Open No. Hei 8-1.
No. 62528 discloses the possibility of a semiconductor device having an interlayer insulating film having both low dielectric constant and high reliability. An example of such a semiconductor device will be described with reference to FIG.

FIG. 4 is a schematic cross-sectional view of a semiconductor device in which a MOS transistor (not shown) or the like is formed.
A lower insulating film 2 made of SiO ₂ or the like, a line-and-space wiring 10 made of Al-1% Si or the like, and a protective inorganic insulating film 23 for covering the wiring 10 conformally on a semiconductor substrate 1 such as , An organic insulating film 24 having a flat surface, and a cap inorganic insulating film 25 further covering the organic insulating film 24 are sequentially formed. The organic insulating film 24 is a laminated insulating film sandwiched between the protective inorganic insulating film 23 and the cap inorganic insulating film 25.

[0008]

The laminated insulating film represented by the structure shown in FIG. 4 is particularly effective for a semiconductor device using a fluorine resin as an organic insulating film. Fluorine-based resins do not always have sufficient oxidation resistance, heat resistance, heat diffusion properties, and stress resistance, and are applied to the interlayer insulation film of semiconductor devices in the form of a single layer of organic insulation film such as fluorine-based resin. It is difficult. In particular, the stress resistance against mechanical stress is insufficient compared with a silicon oxide-based insulating film conventionally used as an interlayer insulating film. This is 5 to 10 × 1 of the silicon oxide-based insulating film in comparison with Young's modulus.
For 0 ¹⁰ Pa, the fluororesin is 0.1 to 0.8 × 10
^One reason is that it is as small as about ¹⁰ Pa.

For this reason, when an organic insulating film is introduced as an interlayer insulating film of a semiconductor device, a new problem which has not occurred in the past occurs. One of the problems is separation of the inorganic insulating film and the organic insulating film mainly due to the vaporization pressure of moisture adsorbed or contained in the inorganic insulating film. The problem of delamination occurs due to heating in a later step of forming wiring and an interlayer insulating film, and this problem becomes apparent particularly when a silicon oxide-based insulating film having a high water content is used.

In the case of a silicon oxide insulating film conventionally used as an interlayer insulating film, such vaporized moisture diffuses in the film and is released to the outside. In the case of a film, delamination is not particularly problematic. However, in the case of an organic insulating film, since the moisture absorption is small, vaporized moisture generated from the inorganic insulating film is confined in the organic insulating film having high moisture permeability, and the internal pressure of that portion increases. At this time, since the organic insulating film is weak to mechanical stress, the pressure causes delamination or, in extreme cases, destruction of the organic insulating film itself.

The present invention has been made in view of the above problems, and has been proposed in a method of manufacturing a semiconductor device using a laminated insulating film of an organic insulating film and an inorganic insulating film. It is an object to prevent deformation or destruction of a film. Another object of the present invention is to provide a highly reliable and highly integrated semiconductor device using such a manufacturing method.

[0012]

In order to achieve the above object, a method of manufacturing a semiconductor device according to claim 1 of the present invention is directed to a laminated insulating film including an organic insulating film and an inorganic insulating film on a substrate to be processed. A method for manufacturing a semiconductor device, comprising the step of forming a wiring material on the laminated insulating film, comprising a heat treatment step of removing water contained in the laminated insulating film prior to the step of forming the wiring material. After that, the wiring material is continuously formed without exposing the substrate to be processed to the atmosphere.

The laminated insulating film has connection holes, and the step of forming the wiring material includes a step of forming a contact plug material for filling at least the inside of the connection holes. Alternatively, the laminated insulating film has a connection hole and a contact plug filled in the connection hole, and the step of forming the wiring material is a step of forming an upper wiring material on the laminated insulating film. I do.

Further, in order to achieve the above-mentioned object, a method of manufacturing a semiconductor device according to a sixth aspect of the present invention provides a method for manufacturing a semiconductor device, comprising the steps of:
A method of manufacturing a semiconductor device having a wiring on the laminated insulating film and a step of forming an upper insulating film on the laminated insulating film and the wiring, the method comprising the steps of: A heat treatment step of removing moisture contained in the laminated insulating film is performed, and thereafter, the upper insulating film is continuously formed without exposing the substrate to be processed to the atmosphere.

The semiconductor device according to the present invention is characterized by being manufactured by including the method for manufacturing these semiconductor devices.

The inorganic insulating film used in the present invention is not particularly limited, and may be silicon oxide, PSG or BS.
Any type of inorganic insulating film such as silicon oxide, silicon oxynitride, silicon nitride, and SiOF containing impurities such as G and BPSG may be used. Silicon oxide having fine bubbles such as silica gel (Xerogel) may be used. Alternatively, silicon oxide containing more Si atoms than a normal chemical equivalent composition may be used. It is also effective to use an inorganic insulating film having high thermal conductivity, such as diamond-like carbon or fluorinated diamond-like carbon. Further, these insulating films may be used in a single layer or a multilayer. Also, its manufacturing method is CVD (Chemical Vapor D
eposition), PVD (Physical Vapor Deposition), coating method, firing method, and the like.

Next, the organic insulating film used in the present invention is not particularly limited as long as it has a lower dielectric constant than the above-mentioned inorganic insulating film. Organic SOG (relative permittivity 3 to 3.
5), polyimide (dielectric constant 3 to 3.5), polyparaxylylene, benzocyclobutene (dielectric constant about 2.6),
Hydrocarbon resins such as polynaphthalene, or polyimides having a perfluoro group introduced (relative permittivity of about 2.7), fluorinated polyparaxylylene (relative permittivity of about 2.4), and fluorinated polyarylether (relative permittivity of about 2.4) Dielectric constant 2.6), Teflon (trade name, relative dielectric constant 1.9 to 2.1), Cytop (trade name, relative dielectric constant 2.1) or flare (trade name)
Can be adopted. Further, these insulating films may be used in a single layer or a multilayer. The manufacturing method is also CV
Regardless of D, PVD or a coating method, it does not matter.

Since the heat treatment step employed in the present invention is for the purpose of removing moisture adsorbed or contained in the laminated insulating film, particularly the inorganic insulating film, the application temperature varies depending on the type and film quality of the inorganic insulating film. However, it is desirable to use a temperature of about 200 ° C. or higher. For example, when a film is formed by a high-density plasma CVD method by applying a substrate bias, since the film quality is dense and the adsorption or content of moisture is small,
A low temperature of about 200 ° C. is sufficient. The upper limit also varies depending on the material of the organic insulating film, but it is generally preferable that the upper limit is about 400 ° C. or lower, which is lower than the thermal decomposition or deterioration temperature of the heat-resistant resin. The heat treatment atmosphere is desirably nitrogen or a rare gas, but may be air if there is no fear of thermal oxidation of the wiring and the like. Further, even under normal pressure, a reduced pressure atmosphere may be used.

Next, the operation will be described. In the present invention, before forming a wiring material having no or little moisture permeability or an interlayer insulating film on the laminated insulating film, the temperature is 200 ° C. or more and 400 ° C. or less.
A heat treatment of about not more than ℃ is applied. This heat treatment mainly removes moisture adsorbed on or contained in the inorganic insulating film. Thereafter, if the wiring material and the interlayer insulating film are continuously formed without exposing the substrate to be processed to the atmosphere, moisture is no longer vaporized in the heating step in forming the wiring material and the interlayer insulating film. . Therefore, separation between the organic insulating film and the inorganic insulating film having poor stress resistance, and thermal deformation and destruction of the organic insulating film are prevented.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for manufacturing a semiconductor device according to the present invention and an embodiment of a semiconductor device using the same will be described below with reference to the drawings. First, a semiconductor device manufactured by including the method of manufacturing a semiconductor device of the present invention is described with reference to FIG.
This will be described with reference to the schematic sectional view shown in FIG.

A MOS transistor (not shown) or Bipol
A lower insulating film 2, a lower wiring 11 made of Al-1% Si or the like, and a lower protective inorganic insulating film for covering the lower wiring 11 conformally on a semiconductor substrate 1 made of Si or the like in which an ar transistor or the like is formed. 3, a lower organic insulating film 4 formed on the lower protective inorganic insulating film 3 and desirably having a flat surface, a lower cap inorganic insulating film 5,
An upper-layer wiring 13 also made of Al-1% Si or the like, an upper-layer protective inorganic insulating film 6 that conformally covers the upper-layer wiring 13, and formed on the upper protective inorganic insulating film 6;
Desirably, the semiconductor device of the present invention generally includes an upper organic insulating film 7, an upper cap inorganic insulating film 8, and the like, the surfaces of which are planarized. The lower wiring 11 and the upper wiring 13 are connected by a contact plug 12.

Among these, the lower insulating film 2, the lower protective inorganic insulating film 3, the lower cap inorganic insulating film 5, the upper protective inorganic insulating film 6, the upper cap inorganic insulating film 8 and the like are made of silicon oxide, PSG. , BSG, and BPSG, and is formed of an inorganic insulating material such as silicon oxide, silicon oxynitride, silicon nitride, SiOF, diamond-like carbon, or fluorinated diamond-like carbon. An upper wiring layer may be formed on the upper cap inorganic insulating film 8. Further, the upper cap inorganic insulating film 8 may be a final passivation film.

The lower organic insulating film 4 and the upper organic insulating film 7 are made of a hydrocarbon resin such as organic SOG, polyimide, polyparaxylylene, benzocyclobutene, polynaphthalene, or a polyimide having a perfluoro group introduced. , Fluorinated polyparaxylylene, fluorinated polyaryl ether, Teflon (trade name), Cytop (trade name) or Flare (trade name).

The material of the lower layer wiring 11 and the upper layer wiring 13 is not particularly limited, and may be any of a high melting point metal such as Al-based metal, Cu-based metal, W, a high melting point metal silicide, a high melting point metal polycide, and polycrystalline silicon. It may be a material. Further, an adhesive layer, a barrier layer or an antireflection layer may be used in combination. The material of the contact plug 12 is also not particularly limited, and may be any material such as an Al-based metal, a Cu-based metal, a high melting point metal such as W or Mo, or polycrystalline silicon. Further, an adhesive layer such as Ti or TiN or a barrier layer may be used in combination.

The heat treatment step characterized by the method of manufacturing a semiconductor device according to the present invention comprises the steps of:
Before the wiring material for the upper layer wiring 13 is formed, and before the formation of the upper cap inorganic insulating film 8. That is, a heat treatment step is performed before forming a film having no or small moisture permeability. After the heat treatment step, the substrate to be processed is not exposed to the atmosphere, but in the same heat treatment chamber, or in a vacuum or dry nitrogen, in order to prevent the moisture absorption into the laminated insulating film, particularly the inorganic insulating film again. The substrate is transferred to a film forming chamber in an atmosphere or the like, and a wiring material layer and an upper insulating film are continuously formed.
By these heat treatments, heating in the step of forming the wiring material layer and the upper insulating film, separation in the subsequent heat treatment step, and destruction of the organic insulating film are prevented.

[0026]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a method of manufacturing a semiconductor device according to the present invention and a semiconductor device using the same will be described in more detail with reference to the drawings. The present invention is not limited to these examples.

Embodiment 1 This embodiment is an example in which polyparaxylylene represented by Chemical Formula 1 is adopted as a material of an organic insulating film and is formed by a CVD method to form an organic insulating film. Yes, this step will be described with reference to FIGS.

[0028]

Embedded image

First, as shown in FIG. 2A, a silicon substrate in which transistors and the like (not shown) are formed is adopted as the semiconductor substrate 1, and a silicon oxide film is formed as a lower insulating film 2 on the semiconductor substrate 1 by CVD. It is formed to a thickness of 500 nm by a method, and a connection hole (not shown) is opened here if necessary. The lower insulating film 2 can be formed by a low-pressure CVD method using a general SiH ₄ and O ₂ gas or a TEOS
A plasma CVD method using (Tetraethylorthosilicate) and O ₂ gas may be used.

Thereafter, an Al-1% Si alloy film is formed to a thickness of 600 nm by sputtering, and is further subjected to a lithography process using a chemically amplified resist and a KrF excimer laser stepper, a dry etching process, etc.
A 5 μm line-and-space lower wiring 11 is formed. The Al-1% Si alloy film may include a barrier film made of Ti, TiN, or the like, an antireflection film, or the like. Lower layer wiring 1
1 is 0.35 μm, which is the same as the wiring width of 0.35 μm, for example.
m, a dense wiring interval region having a space width of
and a sparse wiring space region having a wide space width of about μm.

Next, a lower protective inorganic insulating film 3 made of a silicon oxide film is formed to a thickness of 100 nm by a plasma CVD method using SiH ₄ and N ₂ O gas. This thickness is the thickness of the film formed on the flat portion of the substrate to be processed. In particular, in the space portion of the lower wiring 11 in the dense wiring interval region,
It is formed thinner than this film thickness.

Next, as shown in FIG. 2B, a lower organic insulating film 4 made of polyparaxylylene is formed on the lower protective inorganic insulating film 3 to a thickness of 500 nm by a low pressure CVD method. Decompression CVD conditions Diparaxylylene sublimation temperature 200 ° C Thermal decomposition temperature 600 to 650 ° C Substrate temperature to be processed 0 ° C Raw material diparaxylylene is a solid powder. And sublime. This diparaxylylene gas is decomposed into monomers by heating to 600 to 650 ° C. For heating diparaxylylene gas, for example, a hollow heating furnace in which a resistance heater is wound between a sublimation source and a substrate to be processed in the same CVD chamber is provided, and diparaxylylene gas is supplied into the hollow heating furnace. You only have to pass. The decomposed para-xylylene monomer then becomes a gas flow of about 150 ° C., and when it reaches the substrate to be processed cooled to about 0 ° C., it polymerizes there and forms a lower organic insulating film 4 made of para-xylylene polymer. Form.

Thereafter, as shown in FIG. 2C, a silicon oxide film is formed on the lower organic insulating film 4 as the lower cap inorganic insulating film 5 by a plasma CVD method using a parallel plate type plasma CVD apparatus to a thickness of 450 nm. Form. When flatness of the surface of the lower cap inorganic insulating film 5 is required, a film having a thickness of about 1000 nm is formed in advance, and then the surface is flattened by a CMP (Chemical Mechanical Polishing) method. In this case, the lower cap inorganic insulating film 5
It is desirable that at least 450 nm be left on the lower wiring 11. Plasma CVD conditions SiH ₄ 100 sccm N ₂ O 1500 sccm N ₂ 1000 sccm Pressure 100 Pa Substrate temperature 350 ° C. Plasma power 500 W (13.56 MHz) CMP uses a slurry in which colloidal silica is suspended in an alkaline aqueous solution. Good.

Next, a connection hole (via contact hole) 9 having an opening diameter of 0.25 μm is formed by using a normal resist patterning step and a silicon oxide film and organic polymer film etching step. FIG. 3D shows a state after the resist mask is removed.

Thereafter, usually, immediately after the opening of the connection hole 9, the process immediately proceeds to the step of forming a contact plug. In this embodiment, a heat treatment step is performed in a non-oxidizing atmosphere such as nitrogen after the resist mask is stripped. Heat treatment condition Substrate temperature to be processed 350 ° C. Time 30 minutes By this heat treatment step, moisture adsorbed or contained in lower cap inorganic insulating film 5 is mainly removed.

Thereafter, the substrate to be processed is subjected to ECR plasma CV.
It is transported on the substrate stage of the D apparatus. In the transfer, the substrate is transferred in a vacuum or in a dry nitrogen atmosphere to prevent re-absorption of moisture on the substrate to be processed due to direct contact with the atmosphere.

Next, a Ti film is formed to a thickness of 30 nm and a TiN film is formed to a thickness of 40 nm by ECR plasma CVD. ECR plasma CVD conditions for Ti film TiCl ₄ 5 sccm H ₂ 120 sccm Ar 250 sccm Microwave power 2.8 kW (2.45 GHz) Pressure 10 ³ Pa Substrate temperature 350 ° C. The Ti film and TiN film are formed by sputtering or the like. It may be formed by a reactive sputtering method.

Further, W is formed by a blanket CVD method.
A (tungsten) film is formed to a thickness of 700 nm. Nucleation blanket CVD conditions WF ₆ 25 sccm SiH ₄ 10 sccm Microwave power 2.8 kW (2.45 GHz) pressure 10 ⁴ Pa target substrate temperature 450 ° C. the film growth blanket CVD conditions WF ₆ 60 sccm H ₂ 350 sccm Microwave Power 2.8 kW (2.45 GHz) Pressure 10 ⁴ Pa Substrate temperature 450 ° C. A contact plug material may be formed by forming an Al-based metal by sputtering or the like instead of forming a W film.

Thereafter, the W film is etched back using a fluorine-based gas such as SF ₆ , and then the TiN film and the Ti film are etched back using a chlorine-based gas such as Cl ₂ . The contact plug 12 is formed in the connection hole 9 as shown in e). Note that instead of etch back, C
The contact plug 12 may be formed by polishing the W film, the TiN film, and the Ti film by MP so as to bury them in the connection holes 9.

Normally, immediately after the formation of the contact plug 12, the process immediately proceeds to the step of forming an upper layer wiring material. In the present embodiment, a heat treatment step is performed in a non-oxidizing atmosphere such as nitrogen after the formation of the contact plug 12. Heat treatment conditions Substrate temperature to be processed 350 ° C. Time 30 minutes By this heat treatment step, moisture newly adsorbed or included in the lower cap inorganic insulating film 5 is mainly removed.

After that, the substrate to be processed is transferred onto the substrate stage of the sputtering apparatus. In the transfer, the substrate is transferred in a vacuum or in a dry nitrogen atmosphere to prevent re-absorption of moisture on the substrate to be processed due to direct contact with the atmosphere.

Thereafter, an Al-1% Si alloy film is formed to a thickness of 600 nm by sputtering, and further subjected to various steps such as lithography using a chemically amplified resist and a KrF excimer laser stepper, and dry etching using a chlorine-based gas. The upper wiring 13 in the form of an and space is formed. The Al-1% Si alloy film may include a barrier film or an antireflection film made of Ti, TiN, or the like. Upper layer wiring 1
FIG. 3 (f) shows a state after the formation of No. 3.

Normally, immediately after the formation of the upper wiring 13, the process immediately proceeds to the step of forming an insulating film covering the upper wiring 13. However, in this embodiment, after the formation of the upper wiring 13, the heat treatment is performed in a non-oxidizing atmosphere such as nitrogen. Add. Heat treatment condition Substrate temperature to be processed 350 ° C. Time 30 minutes By this heat treatment step, water adsorbed or included in lower cap inorganic insulating film 5 is mainly removed.

The state in which the upper protective inorganic insulating film 6, the upper organic insulating film 7, and the upper cap inorganic insulating film 8 are formed as the insulating film covering the upper wiring 13 is shown in FIG. Shown as a diagram. These insulating films
Since the film can be formed according to the method of forming the lower protective inorganic insulating film 3, the lower organic insulating film 4, and the lower cap inorganic insulating film 5 whose forming method has been previously described, duplicate description will be omitted. . Thereafter, when forming a multilayer wiring of three or more layers, the above-described steps may be repeated. When the wiring is limited to a two-layer wiring, the upper cap inorganic insulating film 8 may be used as a final passivation film,
A silicon nitride film or the like having a high ion barrier property may be further formed.

According to the present embodiment, film peeling or deformation and breakage of an organic insulating film in a semiconductor device using polyparaxylylene as an organic insulating film can be effectively prevented by introducing a heat treatment step at a key position. Can be prevented.

Example 2 In this example, a fluororesin (trade name: Teflon AF) shown in [Chemical Formula 2] was employed as a material for an organic insulating film, and this was formed into a film by a spin coating method. This is an example in which an insulating film is formed, and this step will be described with reference to FIGS. In addition, Teflon AF (trade name) is a fluororesin shown in [Chemical formula 2] or similar.
Other than these may be used.

[0047]

Embedded image

The sample employed in this embodiment is the same as that described in the first embodiment with reference to FIG. Next, the lower protective inorganic insulating film 3
The surface is irradiated with plasma to increase its surface energy.
As the plasma processing apparatus, an ordinary parallel plate type plasma processing apparatus was used. Plasma treatment conditions N ₂ O 50 sccm Pressure 10 Pa RF power 300 W Time 2 minutes Continuously, CF ₃ (CF ₂ ) _n CH ₂ as a coupling agent
SiCl ₃ or CF ₃ (CF ₂ ) _n CH ₂ Si
(OCH ₃ ) ₃ or CF ₃ (CF ₂ ) _n CH ₂ S
A solution obtained by diluting i (OH) ₃ or the like in a solvent was spin-coated (where n is a natural number of 2 or more). The coating thickness may be about the thickness of a monomolecular layer.

The fluororesin represented by the formula (2) is dissolved in a fluorocarbon-based solvent, applied to the lower protective inorganic insulating film 3 treated with a coupling agent by a spin coating method, dried and cured to form a lower layer. An organic insulating film 4 was formed to a thickness of 500 nm. Spin coating condition Viscosity 30 cp Rotation speed 3000 rpm Drying condition Temperature 100 ° C. Atmosphere Nitrogen pressure Atmospheric pressure Time 2 minutes Curing condition Temperature 250 ° C. Atmosphere Nitrogen pressure Atmospheric pressure Time 5 minutes Atmosphere for drying and curing is an inert gas such as Ar. May be used. FIG. 2B shows a state after the lower organic insulating film 4 is formed.

From the subsequent step, that is, the step of forming the lower cap inorganic insulating film 5 shown in FIG.
The steps up to the step of forming the upper wiring 13 may be performed according to the first embodiment, including the heat treatment step.

The state in which the upper protective inorganic insulating film 6, the upper organic insulating film 7, and the upper cap inorganic insulating film 8 are formed as the insulating film covering the upper wiring 13 is shown in FIG. Shown as a diagram. These insulating films
The lower protective inorganic insulating film 3, the lower organic insulating film 4, and the lower cap inorganic insulating film 5 can be formed according to a forming method or a heat treatment method. Thereafter, when forming a multilayer wiring of three or more layers, the above-described steps may be repeated. When the wiring is limited to a two-layer wiring, the upper cap inorganic insulating film 8 may be used as a final passivation film, or a silicon nitride film having high moisture resistance and high ion barrier properties may be further formed.

According to the present embodiment, film peeling or deformation and damage of the organic insulating film in a semiconductor device using a low dielectric constant fluororesin as the organic insulating film can be prevented by introducing a heat treatment step at a key position. It can be effectively prevented.

Embodiment 3 In this embodiment, a semiconductor device was manufactured by the same manufacturing method as in Embodiment 2 except that Cytop (trade name) shown in Chemical Formula 3 was used as the material of the organic insulating film. Manufactured. The method of forming a CYTOP film may be the same as that of Teflon AF. However, a resin other than Cytop may be used as long as it is an organic insulating film material having the same or similar structure as in Chemical Formula 3.

[0054]

Embedded image

According to the present embodiment, the peeling of the film or the deformation and damage of the organic insulating film in a semiconductor device using a low dielectric constant CYTOP as the organic insulating film can be effectively reduced by introducing a heat treatment step at an important place. Can be prevented.

Example 4 In this example, the production was carried out in the same manner as in Example 2 except that a fluorinated polyaryl ether (trade name: flare) shown in Chemical Formula 4 was used as the material of the organic insulating film. A semiconductor device was manufactured by the method. The method of forming the flare may be the same as that of Teflon AF. However, a resin other than the flare may be used as long as it is an organic insulating film material having the same or similar structure as in Chemical Formula 4. Further, a polyaryl ether containing no fluorine atom may be used.

[0057]

Embedded image

According to the present embodiment, film peeling or deformation and breakage of the organic insulating film in a semiconductor device using a flare having a low dielectric constant as the organic insulating film can be effectively prevented by introducing a heat treatment step at an important point. Can be prevented.

Example 5 In this example, a semiconductor device was manufactured by the same manufacturing method as in Example 2 except that the fluorinated polyimide shown in Chemical Formula 5 was used as the material of the organic insulating film. The method of forming the fluorinated polyimide may be the same as that of Teflon AF. However, a resin other than the fluorinated polyimide may be employed as long as it is an organic insulating film material having the same or similar structure as in Chemical Formula 5.

[0060]

Embedded image

According to this embodiment, film peeling or deformation and damage of the organic insulating film in a semiconductor device using a polyimide having a low dielectric constant and high heat resistance as the organic insulating film can be prevented by a heat treatment step at a key position. Can be effectively prevented.

Although the present invention has been described in detail with reference to the five embodiments, the present invention is not limited to these embodiments.

For example, silicon oxide is exemplified as the inorganic insulating film material, but silicon oxide containing impurities, silicon oxide containing fluorine, silicon oxide other than chemical equivalents, silicon oxynitride, silicon nitride, diamond-like carbon, etc. Can be used.

Further, in addition to polyparaxylylene, Teflon (trade name), Cytop (trade name), flare (trade name), or fluorinated polyimide, organic SOG and various carbonized materials described in the examples as the organic insulating film. A hydrogen resin, a silicone resin, a fluorocarbon resin, or the like may be used.

Although a substrate to be processed in which a wiring group is formed by a wiring layer made of an Al-1% Si alloy is employed, a wiring material such as polycrystalline silicon, a high melting point metal, or a high melting point metal polycide having a laminated structure thereof is used. May be used. Further, the present invention can be applied to a case where a laminated insulating film is used as a final passivation film. Further, the present invention is also effective when a compound semiconductor substrate such as GaAs is used in addition to Si as the semiconductor substrate. In addition to the semiconductor device, it is needless to say that the present invention can be applied to various kinds of high-frequency microelectronic devices, such as a thin film head and a thin film inductor, in which an insulating film is required to have a low dielectric constant.

[0066]

As is apparent from the above description, according to the method of manufacturing a semiconductor device of the present invention, a method of manufacturing a semiconductor device in which an organic insulating film having low stress resistance is used as a part of a laminated insulating film. It is possible to avoid the problem of film peeling in the process and the problem of thermal deformation and breakage of the organic insulating film. Therefore, by employing the method for manufacturing a semiconductor device of the present invention,
A highly integrated semiconductor device with a low dielectric constant of an interlayer insulating film or a passivation film can be provided with high reliability.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing a semiconductor device of the present invention.

FIG. 2 is a schematic sectional view illustrating a method for manufacturing a semiconductor device of the present invention.

FIG. 3 is a schematic cross-sectional view showing a method for manufacturing a semiconductor device of the present invention, showing a step following FIG. 2;

FIG. 4 is a schematic cross-sectional view of a semiconductor device having a stacked insulating film of an inorganic insulating film and an organic insulating film.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate, 2 ... Lower insulating film, 3 ... Lower protective inorganic insulating film, 4 ... Lower organic insulating film, 5 ... Lower cap inorganic insulating film, 6 ... Upper protective inorganic insulating film, 7 ... Upper organic System insulating film, 8: upper cap inorganic insulating film, 9: connection hole,
DESCRIPTION OF SYMBOLS 10 ... wiring, 11 ... lower wiring, 12 ... contact plug, 13 ... upper wiring, 23 ... protective inorganic insulating film, 24 ...
Organic insulating film, 25 ... cap inorganic insulating film

Claims (8)

[Claims] 1. A method for manufacturing a semiconductor device, comprising: a laminated insulating film including an organic insulating film and an inorganic insulating film on a substrate to be processed; and a step of forming a wiring material on the laminated insulating film. Prior to the step of forming the wiring material, a heat treatment step of removing moisture contained in the laminated insulating film is performed. Thereafter, the wiring material is continuously formed without exposing the substrate to be processed to the atmosphere. A method of manufacturing a semiconductor device. 2. The method according to claim 1, wherein the laminated insulating film has a connection hole, and the step of forming the wiring material includes a step of forming a contact plug material for filling at least the inside of the connection hole. A method for manufacturing a semiconductor device. 3. The laminated insulating film has a connection hole and a contact plug filled in the connection hole, and the step of forming the wiring material is a step of forming an upper wiring material on the laminated insulating film. The method for manufacturing a semiconductor device according to claim 1, wherein: 4. The method according to claim 1, wherein a relative dielectric constant of the organic insulating film is smaller than a relative dielectric constant of the inorganic insulating film. 5. A semiconductor device manufactured by including the method for manufacturing a semiconductor device according to claim 1. 6. A laminated insulating film including an organic insulating film and an inorganic insulating film on a substrate to be processed, and a wiring on the laminated insulating film, wherein an upper insulating film is formed on the laminated insulating film and the wiring. A method of manufacturing a semiconductor device having a step of forming a film, wherein prior to the step of forming the upper insulating film, a heat treatment step of removing moisture contained in the laminated insulating film is performed. A method of manufacturing a semiconductor device, wherein the upper insulating film is continuously formed without being exposed to the atmosphere. 7. The method according to claim 6, wherein a relative dielectric constant of the organic insulating film is smaller than a relative dielectric constant of the inorganic insulating film. 8. A semiconductor device manufactured by including the method for manufacturing a semiconductor device according to claim 6.