JPH11145182A - Semiconductor manufacturing device and method therefor - Google Patents
Semiconductor manufacturing device and method thereforInfo
- Publication number
- JPH11145182A JPH11145182A JP9302189A JP30218997A JPH11145182A JP H11145182 A JPH11145182 A JP H11145182A JP 9302189 A JP9302189 A JP 9302189A JP 30218997 A JP30218997 A JP 30218997A JP H11145182 A JPH11145182 A JP H11145182A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor manufacturing
- adhesive
- lead frame
- wire bonding
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7865—Means for transporting the components to be connected
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01007—Nitrogen [N]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ワイヤーボンディ
ングを行う半導体製造装置に関する。The present invention relates to a semiconductor manufacturing apparatus for performing wire bonding.
【０００２】[0002]
【従来の技術】従来の技術を図５に示す。半導体チップ
７を接着剤８を介しリードフレーム２に接着するダイボ
ンディングを実施した後、キュア装置で硬化し、図５に
示すワイヤーボンディングを行なっていた。ワイヤーボ
ンディングを行う半導体製造装置は、少なくとも加熱部
１とリードフレーム２を加熱部１に押さえつけるリード
フレーム押さえ３と超音波振動を伝えるホーン４と導電
性ワイヤ６を通すキャピラリ５より構成されている。ワ
イヤーボンディングは室内雰囲気にてリードフレーム下
面からの加熱部１の加熱とキャピラリ５の荷重および超
音波振動を用いて導電性ワイヤ６の接続を行なってい
た。2. Description of the Related Art FIG. After performing the die bonding for bonding the semiconductor chip 7 to the lead frame 2 via the adhesive 8, the semiconductor chip 7 is cured by a curing device, and the wire bonding shown in FIG. 5 is performed. The semiconductor manufacturing apparatus for performing wire bonding includes at least a heating unit 1, a lead frame holder 3 for holding the lead frame 2 against the heating unit 1, a horn 4 for transmitting ultrasonic vibration, and a capillary 5 for passing a conductive wire 6. In the wire bonding, the conductive wire 6 is connected by heating the heating unit 1 from the lower surface of the lead frame and using the load of the capillary 5 and ultrasonic vibration in an indoor atmosphere.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、従来は
ワイヤーボンディング時の加熱により半導体チップとリ
ードフレームを固着する接着剤からアウトガスが発生
し、前記アウトガスが半導体チップ表面に付着し再凝集
する事で、ボンディング強度の劣化やモールド樹脂との
密着性の低下、半導体チップの腐食などの課題があっ
た。また、前記アウトガスが導電性ワイヤ及びキャピラ
リなどの導電性ワイヤの通過ルートで再凝集する事で、
導電性ワイヤがスムーズに動かなくなり、導電性ワイヤ
切れや導電性ワイヤのループ異常による不良品の発生
や、キャピラリ交換や清掃などの作業が頻繁に必要であ
った。However, conventionally, an outgas is generated from an adhesive for fixing the semiconductor chip and the lead frame due to heating at the time of wire bonding, and the outgas adheres to the surface of the semiconductor chip and reaggregates. There have been problems such as deterioration of bonding strength, decrease in adhesion to mold resin, and corrosion of semiconductor chips. In addition, the outgas is re-agglomerated in a passage route of a conductive wire such as a conductive wire and a capillary,
The conductive wire did not move smoothly, and a defective product was generated due to a broken conductive wire or an abnormal loop of the conductive wire, and operations such as capillary exchange and cleaning were frequently required.
【０００４】また、半導体チップとリードフレームを固
着する接着剤の硬化の為のキュア工程についてである
が、従来キュア専用の装置が必要であった。半導体チッ
プとリードフレームを接着するダイボンディング、次に
接着剤を硬化させるキュア、そしてワイヤーボンディン
グという工程順であるが、キュアはオーブンによるバッ
チ処理が一般的で、その他にヒーターブロックでリード
フレームを１枚づつキュアを行う枚葉式キュア装置によ
ってキュア工程をダイボンディング工程と連結したり、
さらにワイヤーボンディングとも連結し、製品のハンド
リングを自動化した例が知られている。但しこの枚葉式
キュア装置は高額の設備投資が必要であった。Also, regarding the curing step for curing the adhesive for fixing the semiconductor chip and the lead frame, conventionally, an apparatus dedicated to curing has been required. The order of the steps is die bonding for bonding the semiconductor chip and the lead frame, then curing to cure the adhesive, and wire bonding. The cure is generally batch processing in an oven. The curing process is linked with the die bonding process by a single wafer type curing device that cures one by one,
Further, an example in which product handling is automated by connecting with wire bonding is also known. However, this single-wafer curing apparatus required a large capital investment.
【０００５】そこで本発明は、従来のこのような課題を
解決するために、加熱部を有し、ワイヤーボンディング
を行う半導体製造装置で前記加熱部に排気手段を備える
事で、前記加熱部で発生する接着剤のアウトガスによる
汚染を防止し、高品質で高歩留の半導体装置と高稼働率
の半導体製造装置を提供する事を目的としている。ま
た、排気手段を備えた事によりアウトガス汚染の課題が
無くなり、ワイヤーボンディング用の加熱部を利用して
半導体チップとリードフレームを固着する接着剤の硬化
が高品質で可能になった。これによってワイヤーボンデ
ィングを行う半導体製造装置内で接着剤硬化が可能とな
り、従来必要であった専用のキュア装置が不要で、キュ
ア工程とワイヤーボンディング工程連結が最少の改造コ
ストで提供できる事も目的としている。In order to solve such a conventional problem, the present invention has a heating unit, and in the semiconductor manufacturing apparatus for performing wire bonding, the heating unit is provided with an exhaust means, so that the heating unit generates the heat. It is an object of the present invention to provide a high-quality, high-yield semiconductor device and a high-operation-rate semiconductor manufacturing device by preventing contamination due to outgassing of an adhesive. In addition, the provision of the exhaust means eliminates the problem of outgas contamination, and makes it possible to harden the adhesive for fixing the semiconductor chip and the lead frame with high quality by using a heating portion for wire bonding. This makes it possible to cure the adhesive in the semiconductor manufacturing equipment that performs wire bonding, eliminates the need for a dedicated curing device that was required in the past, and provides the connection between the curing process and the wire bonding process with minimal remodeling cost. I have.
【０００６】[0006]
【課題を解決するための手段】請求項１記載の発明は、
加熱部を有し、ワイヤーボンディングを行う半導体製造
装置において、前記加熱部に排気手段を備えた事を特徴
とする。According to the first aspect of the present invention,
In a semiconductor manufacturing apparatus having a heating unit and performing wire bonding, the heating unit is provided with an exhaust unit.
【０００７】請求項２記載の発明は、請求項１記載の半
導体製造装置において、加熱部のリードフレームに窒素
等不活性ガスを吹き付ける手段を備えた事を特徴とす
る。According to a second aspect of the present invention, there is provided the semiconductor manufacturing apparatus according to the first aspect, further comprising means for blowing an inert gas such as nitrogen into the lead frame of the heating section.
【０００８】請求項３記載の発明は、半導体チップとリ
ードフレームを固着する接着剤の熱硬化を行う工程にお
いて、請求項１記載の半導体製造装置の加熱部を利用し
て前記接着剤の硬化を行う工程を特徴とする。According to a third aspect of the present invention, in the step of thermally curing the adhesive for fixing the semiconductor chip and the lead frame, the curing of the adhesive is performed using a heating section of the semiconductor manufacturing apparatus according to the first aspect. The step of performing is characterized.
【０００９】請求項４記載の発明は、半導体チップとリ
ードフレームを固着する接着剤の熱硬化を行う工程にお
いて、請求項２記載の半導体製造装置の加熱部を利用し
て前記接着剤の硬化を行う工程を特徴とする。According to a fourth aspect of the present invention, in the step of thermally curing the adhesive for fixing the semiconductor chip and the lead frame, the curing of the adhesive is performed by utilizing a heating section of the semiconductor manufacturing apparatus according to the second aspect. The step of performing is characterized.
【００１０】[0010]
【発明の実施の形態】本発明を図面に基づいて説明す
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described with reference to the drawings.
【００１１】図１は、請求項１記載の発明に係る半導体
製造装置の第１実施例の要部を示す図である。FIG. 1 is a view showing a main part of a first embodiment of a semiconductor manufacturing apparatus according to the present invention.
【００１２】まず、構成を説明する。ワイヤーボンディ
ングを行う半導体製造装置は、少なくとも加熱部１とリ
ードフレーム２を加熱部１に押さえつけるリードフレー
ム押さえ３と超音波を伝えるホーン４と導電性ワイヤ６
を通すキャピラリ５より構成される。半導体チップ７は
接着剤８を介しリードフレーム２に接着されている。リ
ードフレーム２の下面の加熱部１の両側に複数個の排気
口１０を持った排気パイプ９が配置され吸引する構成に
なっている。リードフレーム２は図１の左側から右に、
加熱部１で加熱されながら搬送され図１の状態のように
リードフレーム押さえ３で加熱部１に固定されキャピラ
リ５によってワイヤーボンディングが実施される。First, the configuration will be described. The semiconductor manufacturing apparatus for performing wire bonding includes at least a lead frame holder 3 for holding the heating unit 1 and the lead frame 2 against the heating unit 1, a horn 4 for transmitting ultrasonic waves, and a conductive wire 6.
It is composed of a capillary 5 that passes through. The semiconductor chip 7 is bonded to the lead frame 2 via an adhesive 8. An exhaust pipe 9 having a plurality of exhaust ports 10 is arranged on both sides of the heating section 1 on the lower surface of the lead frame 2 so that suction is performed. Lead frame 2 is from left to right in FIG.
The sheet is conveyed while being heated by the heating unit 1, and is fixed to the heating unit 1 by the lead frame holder 3 as shown in FIG. 1 and wire bonding is performed by the capillary 5.
【００１３】半導体チップ７は接着剤８を介しリードフ
レーム２に搭載後、キュア工程にて接着剤硬化を行う。
しかし、キュア温度よりその後のワイヤーボンディング
時の加熱の方が温度が高い時や接着剤８に未硬化成分が
残っていると、ワイヤーボンディングの加熱時に接着剤
８からアウトガスが発生する。このアウトガスが半導体
チップ７やキャピラリ５及び導電性ワイヤ６や導電性ワ
イヤ通過部分への付着し再凝集する事で汚染されてしま
う。この汚染によって、様々な不具合が発生している。After the semiconductor chip 7 is mounted on the lead frame 2 via the adhesive 8, the adhesive is cured in a curing step.
However, when the temperature during the subsequent wire bonding is higher than the cure temperature or when the uncured component remains in the adhesive 8, outgas is generated from the adhesive 8 during the heating of the wire bonding. The outgas adheres to the semiconductor chip 7, the capillary 5, the conductive wire 6, and the portion where the conductive wire passes, and is contaminated by reaggregation. This contamination has caused various problems.
【００１４】ワイヤーボンディング前の半導体チップ７
の表面が汚染される事で、ワイヤーボンディングの接合
強度の低下や接着剤８に含まれる不純物によって電極部
の腐食、モールド樹脂と半導体チップ７の密着性低下等
の課題がある。キャピラリ５や導電性ワイヤ６及び導電
性ワイヤ通過ルートが汚染される事によって導電性ワイ
ヤ６がスムーズに動かず導電性ワイヤ６がワイヤーボン
ディング途中で断線したり、ワイヤーボンディング時の
導電性ワイヤのループ異常が発生しやすくなり不良品発
生の課題もある。Semiconductor chip 7 before wire bonding
The contamination of the surface causes problems such as a decrease in bonding strength of wire bonding, corrosion of an electrode portion due to impurities contained in the adhesive 8, and a decrease in adhesion between the mold resin and the semiconductor chip 7. The conductive wire 6 does not move smoothly due to contamination of the capillary 5, the conductive wire 6, and the route through which the conductive wire passes, and the conductive wire 6 breaks during wire bonding or a loop of the conductive wire during wire bonding. Abnormalities are likely to occur and there is also a problem of defective products.
【００１５】第１実施例では前述したように、排気パイ
プ９をリードフレーム２の下面に配置し吸引を行なって
いる。排気手段はリードフレーム２の上面に配置するよ
り、リードフレーム２の下面に配置したほうが、半導体
チップ７の表面やキャピラリ５や導電性ワイヤ６及び導
電性ワイヤ通過ルートの汚染対策としては効果的であ
る。In the first embodiment, as described above, the exhaust pipe 9 is arranged on the lower surface of the lead frame 2 to perform suction. It is more effective to dispose the exhaust means on the lower surface of the lead frame 2 than on the upper surface of the lead frame 2 as a countermeasure against contamination of the surface of the semiconductor chip 7, the capillary 5, the conductive wire 6, and the conductive wire passage route. is there.
【００１６】半導体チップ７はアウトガス汚染が減少す
る事で、ワイヤーボンディングの接合強度向上や半導体
チップ７とモールド樹脂との密着性の向上、アウトガス
汚染による半導体チップ７の腐食がなくなるなどの品質
向上に結びつく。さらに、アウトガスが導電性ワイヤ６
及びキャピラリ５などの導電性ワイヤ６の通過ルートの
汚染を防げる事で、導電性ワイヤ６がキャピラリ５等で
詰まり導電性ワイヤ６の断線による品質不良を防止でき
る事、導電性ワイヤ６がキャピラリ５等で詰まり導電性
ワイヤ６のルーピング異常に伴う品質不良を防止できる
事やキャピラリ交換頻度、導電性ワイヤ通過ルート清掃
の頻度を長くでき高歩留まりで高稼働率の半導体製造装
置を提供する事ができる。By reducing the outgas contamination of the semiconductor chip 7, the bonding strength of the wire bonding is improved, the adhesion between the semiconductor chip 7 and the molding resin is improved, and the quality of the semiconductor chip 7 is prevented from being corroded by the outgas contamination. Tied. In addition, the outgas is applied to the conductive wire 6.
By preventing contamination of the passage of the conductive wire 6 such as the capillary 5 and the like, the conductive wire 6 can be prevented from being clogged with the capillary 5 or the like, and quality defects due to disconnection of the conductive wire 6 can be prevented. It is possible to provide a semiconductor manufacturing apparatus which can prevent quality defects due to abnormal looping of the conductive wire 6 due to clogging and the like, and can increase the frequency of capillary exchange and the frequency of cleaning of the conductive wire passage route, thereby increasing the yield and the operating rate. .
【００１７】また、従来の半導体製造装置ではワイヤー
ボンディング時のリードフレーム２や半導体チップ７の
画像認識時に加熱部１の熱によって発生する陽炎現象で
画像が歪み認識精度低下を防ぐ為にエアーブローによる
陽炎防止を行なっていたが、本発明での排気手段によっ
て、ダウンフローができ陽炎防止も兼用とできる。よっ
て、エアーブローによる陽炎防止機構を不要にする事も
できる効果がある。Further, in the conventional semiconductor manufacturing apparatus, an image is blown by air blow to prevent the image from being distorted due to a heat haze caused by the heat of the heating unit 1 when the image of the lead frame 2 or the semiconductor chip 7 is recognized at the time of wire bonding. Although the heat haze was prevented, the exhaust means according to the present invention enables downflow and can also be used to prevent the heat haze. Therefore, there is an effect that the heat haze prevention mechanism by air blow can be made unnecessary.
【００１８】図２は、請求項１記載の発明に係る半導体
製造装置の第２実施例の要部を示す断面図である。第１
実施例の排気パイプ９の代わりに排気口１０を加熱部１
に内臓した例である。加熱部１に排気口１０を内臓する
事によって、第１実施例の排気口１０より接着剤８に近
い位置に排気口が設けられる為に、接着剤８からのアウ
トガスの吸引効果が増大する。また、機種切替え時にリ
ードフレーム２の幅が変更となり加熱部１の幅変更が必
要時、第1実施例では排気パイプ９の位置移動も必要と
なるが、第2実施例では加熱部１に排気口１０が内臓さ
れている為、排気位置調整が不要で、機種切替時間が短
縮できる。FIG. 2 is a sectional view showing a main part of a second embodiment of the semiconductor manufacturing apparatus according to the present invention. First
Instead of the exhaust pipe 9 of the embodiment, the exhaust port 10 is connected to the heating unit 1.
This is an example incorporated in a computer. By incorporating the exhaust port 10 in the heating unit 1, the exhaust port is provided at a position closer to the adhesive 8 than the exhaust port 10 of the first embodiment, so that the effect of sucking out gas from the adhesive 8 is increased. Also, when the width of the lead frame 2 changes and the width of the heating unit 1 needs to be changed when the model is changed, the position of the exhaust pipe 9 needs to be moved in the first embodiment. Since the mouth 10 is built-in, adjustment of the exhaust position is not required, and the model switching time can be reduced.
【００１９】図３は、請求項１記載の発明に係る半導体
製造装置の第３実施例の要部を示す図である。第１実施
例及び第２実施例では、加熱部１はワイヤーボンディン
グ用の1個であったが、第３実施例ではワイヤーボンデ
ィング用の加熱部とは別に独立温度制御できる事前加熱
部１１をワイヤーボンディングの手前側に配置してい
る。例えばワイヤーボンディング時の加熱温度より事前
加熱部１１を高く温度設定する事で接着剤８のアウトガ
スを事前加熱部１１で発生させ吸引する事で、ワイヤー
ボンディング部でのアウトガス発生を抑える事が可能に
なる。こうする事で、排気手段は事前加熱部１１の付近
のみでワイヤーボンディング部には排気手段は不要とな
り、排気に伴う空気の流れでの導電性ワイヤのループ異
常がなくなる。事前加熱部１１は１個だけでなく複数持
つ事もワイヤーボンディング前にアウトガスを出し切る
為やサイクルタイム向上に効果的である。FIG. 3 is a view showing a main part of a third embodiment of the semiconductor manufacturing apparatus according to the present invention. In the first embodiment and the second embodiment, the heating unit 1 is one for wire bonding. However, in the third embodiment, the preheating unit 11 capable of controlling the temperature independently of the heating unit for wire bonding is provided by a wire. It is arranged on the near side of bonding. For example, by setting the temperature of the pre-heating unit 11 higher than the heating temperature at the time of wire bonding, the out-gas of the adhesive 8 is generated by the pre-heating unit 11 and sucked, so that the generation of out-gas at the wire bonding unit can be suppressed. Become. By doing so, the exhaust means is only in the vicinity of the pre-heating section 11 and the wire bonding section does not require the exhaust means, and the loop abnormality of the conductive wire due to the flow of air accompanying the exhaust is eliminated. Providing not only one but also a plurality of pre-heating units 11 is effective for releasing outgas before wire bonding and improving cycle time.
【００２０】図３は排気手段を排気パイプ９としている
が、他に排気手段を事前加熱部１１に内臓した例もアウ
トガスの吸引効果が増大し有効である。Although FIG. 3 shows the exhaust means as the exhaust pipe 9, an example in which the exhaust means is incorporated in the preheating unit 11 is also effective because the effect of sucking out gas is increased.
【００２１】図４は、請求項２記載の発明に係る半導体
製造装置の要部を示す図である。請求項１記載の発明に
係る第１実施例の構成に、ワイヤーボンディングを実施
する手前に窒素等の不活性ガスをリードフレーム２に向
かって吹き付ける複数の噴出口を持つノズル１２を付加
した構成としている。第１実施例でリードフレーム２の
下部より排気を行い、接着剤８からのアウトガスを吸引
するが、リードフレーム２の上面からリードフレーム２
に向かって不活性ガスを吹き付けダウンフローを作る事
で、アウトガスの上昇が防げて、より効果的にアウトガ
スの汚染を防止する事が可能となる。請求項１記載の発
明に係る第１実施例に対してだけではなく、第２実施例
及び第３実施例に対しても本実施例は有効である。FIG. 4 is a view showing a main part of a semiconductor manufacturing apparatus according to the second aspect of the present invention. A configuration in which a nozzle 12 having a plurality of injection ports for blowing an inert gas such as nitrogen toward the lead frame 2 before the wire bonding is added to the configuration of the first embodiment according to the first aspect of the present invention. I have. In the first embodiment, air is exhausted from the lower part of the lead frame 2 and outgas from the adhesive 8 is sucked.
By blowing down an inert gas toward, a rise in outgas can be prevented and the outgas contamination can be more effectively prevented. This embodiment is effective not only for the first embodiment according to the first aspect of the present invention but also for the second and third embodiments.
【００２２】また、窒素等の不活性ガスを用いる事でリ
ードフレーム２や半導体チップ７の酸化が防止でき、酸
化によるボンディング強度の低下や、ワイヤボンディン
グ後に封止するモールド剤との密着性低下を防止でき、
さらなる高品質の半導体装置が提供できる。Further, by using an inert gas such as nitrogen, oxidation of the lead frame 2 and the semiconductor chip 7 can be prevented, and a reduction in bonding strength due to oxidation and a reduction in adhesion to a molding agent to be sealed after wire bonding can be prevented. Can be prevented,
Further high-quality semiconductor devices can be provided.
【００２３】請求項３記載の発明に係る半導体製造方法
を図１を用いて説明する。A semiconductor manufacturing method according to the third aspect of the present invention will be described with reference to FIG.
【００２４】従来、ワイヤーボンディングの前に専用の
キュア装置にて、半導体チップ７とリードフレーム２を
固着する接着剤８の硬化を実施していた。しかし近年、
接着剤は数十秒で硬化できる速硬化タイプが普及してお
り高価な専用のキュア装置を使わずに、ワイヤーボンデ
ィング実施前にワイヤーボンディングの加熱部を利用し
て数十秒以下のウエイト時間をおけばワイヤーボンディ
ングに十分な接着強度が得る事が可能である。ところ
が、従来のワイヤーボンディングを行う半導体製造装置
においては、接着剤硬化時に発生するアウトガスの汚染
により半導体チップ７への品質の悪影響や合金ワイヤ６
のキャピラリ５での詰まりが生じたり、作業者の健康を
害する事も想定される。そこで請求項３記載の発明で
は、図１に示すように加熱部１に排気手段を備えた構造
を用いる事で、ワイヤーボンディング用の加熱部１を用
いての半導体チップ７とリードフレーム２を固着する接
着剤８の硬化を行う工程が安価に提供できる。Conventionally, the adhesive 8 for fixing the semiconductor chip 7 and the lead frame 2 has been cured by a dedicated curing device before wire bonding. However, in recent years,
Fast-curing adhesives, which can be cured in tens of seconds, have become widespread.Without using an expensive dedicated curing device, a wait time of tens of seconds or less can be achieved by using the heating part of wire bonding before performing wire bonding. If it is, it is possible to obtain sufficient adhesive strength for wire bonding. However, in a conventional semiconductor manufacturing apparatus that performs wire bonding, the quality of the semiconductor chip 7 is adversely affected due to outgas contamination generated when the adhesive is cured, and the alloy wire 6
It is also conceivable that the capillary 5 may be clogged or the health of the worker may be impaired. Therefore, according to the third aspect of the present invention, the semiconductor chip 7 and the lead frame 2 are fixed to each other by using the heating unit 1 for wire bonding by using a structure having an exhaust unit in the heating unit 1 as shown in FIG. The step of curing the adhesive 8 can be provided at low cost.
【００２５】請求項４記載の発明に係る半導体製造方法
を図４を用いて説明する。前述と同様に半導体チップ７
とリードフレーム２を固着する接着剤８の硬化を行う工
程を提供するもので、請求項３の発明に比較し、リード
フレーム２の上面からリードフレーム２に向かって不活
性ガスを吹き付けダウンフローを作る事で、アウトガス
の上昇が防げて、より効果的にアウトガスの汚染を防止
する事が可能となる。A semiconductor manufacturing method according to the invention will be described with reference to FIG. As described above, the semiconductor chip 7
And a step of hardening the adhesive 8 for fixing the lead frame 2 to the lead frame 2. Compared with the invention of claim 3, an inert gas is blown from the upper surface of the lead frame 2 toward the lead frame 2 to reduce the down flow. By making, the rise of outgas can be prevented, and the outgas pollution can be more effectively prevented.
【００２６】また、窒素等の不活性ガスを用いる事でリ
ードフレーム２や半導体チップ７の酸化が防止でき、酸
化によるボンディング強度の低下や、ワイヤボンディン
グ後に封止するモールド剤との密着性低下を防止でき、
さらなる高品質の半導体製造工程が提供できる。Also, by using an inert gas such as nitrogen, oxidation of the lead frame 2 and the semiconductor chip 7 can be prevented, and a reduction in bonding strength due to oxidation and a reduction in adhesion to a molding agent to be sealed after wire bonding can be prevented. Can be prevented,
An even higher quality semiconductor manufacturing process can be provided.
【００２７】[0027]
【発明の効果】請求項１記載の発明によれば、加熱部を
有し、ワイヤーボンディングを行う半導体製造装置にお
いて、前記加熱部に排気手段を備えた事によって、リー
ドフレームと半導体チップを接着する接着剤から発生す
るアウトガスの汚染を防止でき、高品質でかつ高稼働率
の半導体製造装置を簡単な構成で提供する事ができる。According to the first aspect of the present invention, in a semiconductor manufacturing apparatus having a heating section and performing wire bonding, the lead section and the semiconductor chip are bonded to each other by providing an exhaust means in the heating section. Outgas generated from the adhesive can be prevented from being contaminated, and a high quality and high operation rate semiconductor manufacturing apparatus can be provided with a simple configuration.
【００２８】請求項２記載の発明によれば、請求項１記
載の半導体製造装置において、加熱部のリードフレーム
に窒素等不活性ガスを吹き付ける手段を備えた事で、接
着剤から発生するアウトガス汚染をさらに効果的に抑え
られ、さらにリードフレームや半導体チップの酸化が防
止でき高品質の半導体装置が提供できる。According to the second aspect of the present invention, in the semiconductor manufacturing apparatus according to the first aspect, a means for blowing an inert gas such as nitrogen onto the lead frame of the heating unit is provided, so that outgas contamination generated from the adhesive is provided. Can be suppressed more effectively, and furthermore, oxidation of the lead frame and the semiconductor chip can be prevented, and a high-quality semiconductor device can be provided.
【００２９】請求項３記載の発明によれば、半導体チッ
プとリードフレームを固着する接着剤の熱硬化を行う工
程において、請求項１記載の半導体製造装置の加熱部を
利用して前記接着剤の硬化を行う工程が可能となり、従
来必要であった専用のキュア装置が不要で、キュア工程
とワイヤーボンディング工程連結が最少の改造コストで
提供できる。According to a third aspect of the present invention, in the step of performing thermosetting of the adhesive for fixing the semiconductor chip and the lead frame, the heating section of the semiconductor manufacturing apparatus according to the first aspect is used to apply the adhesive. A curing step is possible, and a dedicated curing device, which has been conventionally required, is not required, and the connection between the curing step and the wire bonding step can be provided with a minimum remodeling cost.
【００３０】請求項４記載の発明によれば、半導体チッ
プとリードフレームを固着する接着剤の熱硬化を行う工
程において、請求項２記載の半導体製造装置の加熱部を
利用して前記接着剤の硬化を行う工程を提供すると共
に、接着剤から発生するアウトガス汚染を効果的に抑え
られ、さらにリードフレームや半導体チップの酸化が防
止でき高品質の半導体製造工程が提供できる。According to a fourth aspect of the present invention, in the step of thermally curing the adhesive for fixing the semiconductor chip and the lead frame, the heating of the adhesive is performed by utilizing a heating section of the semiconductor manufacturing apparatus according to the second aspect. In addition to providing a curing step, outgas contamination generated from the adhesive can be effectively suppressed, and furthermore, oxidation of the lead frame and the semiconductor chip can be prevented and a high quality semiconductor manufacturing step can be provided.
【図１】本発明の実施例の要部を示す側面図。FIG. 1 is a side view showing a main part of an embodiment of the present invention.
【図２】排気口を加熱部に内蔵させた本発明の実施例の
要部を示す断面図。FIG. 2 is a sectional view showing a main part of an embodiment of the present invention in which an exhaust port is incorporated in a heating unit.
【図３】ワイヤーボンディング用とは別の加熱部を設け
た本発明の実施例の要部を示す側面図。FIG. 3 is a side view showing a main part of an embodiment of the present invention in which a heating unit different from that for wire bonding is provided.
【図４】不活性ガスのダウンフローを設けた本発明の実
施例の要部を示す側面図。FIG. 4 is a side view showing a main part of an embodiment of the present invention provided with a downflow of an inert gas.
【図５】従来の半導体製造装置の要部を示す側面図。FIG. 5 is a side view showing a main part of a conventional semiconductor manufacturing apparatus.
１．加熱部 ２．リードフレーム ３．リードフレーム押さえ ４．ホーン ５．キャピラリ ６．導電性ワイヤ ７．半導体チップ ８．接着剤 ９．排気パイプ １０．排気口 １１．事前加熱部 １２．ノズル 1. Heating section 2. Lead frame 3. Lead frame holder 4. Horn 5. Capillary 6. Conductive wire 7. Semiconductor chip 8. Adhesive 9. Exhaust pipe 10. Exhaust port 11. Preheating unit 12. nozzle
Claims (4)
う半導体製造装置において、前記加熱部に排気手段を備
えた事を特徴とする半導体製造装置。1. A semiconductor manufacturing apparatus having a heating unit and performing wire bonding, wherein the heating unit is provided with an exhaust unit.
加熱部のリードフレームに窒素等不活性ガスを吹き付け
る手段を備えた事を特徴とする半導体製造装置。2. The semiconductor manufacturing apparatus according to claim 1,
A semiconductor manufacturing apparatus comprising: means for blowing an inert gas such as nitrogen onto a lead frame of a heating unit.
接着剤の熱硬化を行う工程において、請求項１記載の半
導体製造装置の加熱部を利用して前記接着剤の硬化を行
う工程を特徴とする半導体製造方法。3. The step of thermally curing the adhesive for fixing the semiconductor chip and the lead frame, wherein the step of curing the adhesive using a heating unit of the semiconductor manufacturing apparatus according to claim 1. Semiconductor manufacturing method.
接着剤の熱硬化を行う工程において、請求項２記載の半
導体製造装置の加熱部を利用して前記接着剤の硬化を行
う工程を特徴とする半導体製造方法。4. The step of thermally curing the adhesive for fixing the semiconductor chip and the lead frame, wherein the step of curing the adhesive using a heating section of the semiconductor manufacturing apparatus according to claim 2. Semiconductor manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9302189A JPH11145182A (en) | 1997-11-04 | 1997-11-04 | Semiconductor manufacturing device and method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9302189A JPH11145182A (en) | 1997-11-04 | 1997-11-04 | Semiconductor manufacturing device and method therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11145182A true JPH11145182A (en) | 1999-05-28 |
Family
ID=17906013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9302189A Withdrawn JPH11145182A (en) | 1997-11-04 | 1997-11-04 | Semiconductor manufacturing device and method therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11145182A (en) |
-
1997
- 1997-11-04 JP JP9302189A patent/JPH11145182A/en not_active Withdrawn
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